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PNP Transistor 5401 SOT-23 Specifications

The document provides detailed specifications for the PNP High Voltage Transistor SMD 5401, including its pinout, electrical characteristics, and absolute maximum ratings. It is designed for medium power amplification and switching, with a typical hFE range of 100-400 and a SOT-23 package. Additionally, it includes packaging information and dimensions for the transistor's SOT-23 form factor.

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Jhoan Fernandez
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0% found this document useful (0 votes)
13 views5 pages

PNP Transistor 5401 SOT-23 Specifications

The document provides detailed specifications for the PNP High Voltage Transistor SMD 5401, including its pinout, electrical characteristics, and absolute maximum ratings. It is designed for medium power amplification and switching, with a typical hFE range of 100-400 and a SOT-23 package. Additionally, it includes packaging information and dimensions for the transistor's SOT-23 form factor.

Uploaded by

Jhoan Fernandez
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

MOT 5401

PNP-TRANSISTOR

PNP型 小功率 贴片三极管


PNP High Voltage Transistor SMD 5401
PNP, BEC
■ Complementary to 5401 General Purpose Transistors
■ Transistor Polarity: PNP 对应其他工业型号
■ Transistor pinout: BEC
■ SOT-23 Package
■ Marking Code: 2L
■ hFE: 100~200, 200~300
■ Ldeal for Medium Power Amplification and Switching

Inner circuit 5401 元件标识(打印)

Coollector 3
3

1
Base
2
2L
1. Base
2. Emitter
1
3. Coollector
2 Emitter
SOT-23 内部结构 SOT-23 管脚排列 DEVICE MARKING: 2L

 ABSOLUATE MAXIUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT

Collector -Base Voltage VCBO -160 V

Collector -Emitter Voltage VCEO -150 V

Emitter -Base Voltage VEBO -5 V

DC Collector Current IC -600 mA

Power Dissipation PD 350 mW

Junction Temperature TJ +150 °C

Storage Temperature TSTG -55 ~ +150 °C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

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MOT 5401
PNP-TRANSISTOR

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector-Base Breakdown Voltage BVCBO IC=-100A, IE=0 -160 V

Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 -150 V

Emitter-Base Breakdown Voltage BVEBO IE=-10A, IC=0 -5 V

Collector Cut-off Current ICBO VCB=-120V, IE=0 -50 nA

Emitter Cut-off Current IEBO VBE=-3V, IC=0 -50 nA

VCE=-5V, IC=-1mA 80

DC Current Gain(Note) hFE VCE=-5V, IC=-10mA 80 160 400

VCE=-5V, IC=-50mA 80

IC=-10mA, IB=-1mA -0.2


V
Collector-Emitter Saturation Voltage VCE(SAT)
IC=-50mA, IB=-5mA -0.5

IC=-10mA, IB=-1mA -1
V
Base-Emitter Saturation Voltage VBE(SAT)
IC=-50mA, IB=-5mA -1

Current Gain Bandwidth Product fT VCE=-10V, IC=-10mA, f=100MHz 100 300 MHz

Output Capacitance COB VCB=-10V, IE=0, f=1MHz 6.0 pF

IC=-0.25mA, VCE=-5V
Noise Figure NF 8 dB
RS=1k, f=10Hz ~ 15.7kHz

Note: Pulse test: PW<300 s, Duty Cycle<2%

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MOT 5401
PNP-TRANSISTOR

■ TYPICAL CHARACTERICS

Fig.1 Collector Output Capacitance Fig.2 DC Current Gain


20 3
10
Capacitance, Cob (pF)

VCE=-5V
16
f=1MHz

DC Current Gain, hFE


IE=0
2
10
12

8
1
10

0 0
10
0 1 2 -1 0 1 2 3
-10 -10 -10 -10 -10 -10 -10 -10

Collector-Base Voltage, VCB (V) Collector Current, Ic (mA)

Fig.3 Base-Emitter on Voltage Fig.4 Saturation Voltage


Saturation Voltage, VBE(SAT) VCE(SAT) (V)

3 1
-10 -10
Ic=10*IB
Collector Current, Ic (mA)

VCE=-5V
2 0 VBE(SAT)
-10 -10

1 -1
-10 -10

VCE(SAT)

0 -2
-10 -10
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1 0 1 2 3
-10 -10 -10 -10 -10

Base-Emitter Voltage, VBE (V) Collector Current, Ic (mA)

Fig.5 Current Gain-Bandwidth


Product
3
10
Current Gain-Bandwidth Product,

VCE=-10V

2
10
fT(MHz)

1
10

0
10
-1 0 1 2 3
-10 -10 -10 -10 -10

Collector Current, Ic (mA)

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MOT 5401
PNP-TRANSISTOR

■ DIMENSION 外形封装尺寸数据

单位(UNIT):mm
序号 数值及公差
A 2.90±0.10
B 1.30±0.10
C 1.00±0.10
D 0.40±0.10
E 2.40±0.20
G 1.90±0.10
H 0.95±0.05
J 0.13±0.05
K 0.00-0.10
M ≥0.20
N 0.60±0.10
P 7±2°

Packing
SOT-23 包装规格
SMD片式表面贴封装
包装方式: 载带卷盘包装
Tape & Reel, 3Kpcs/Reel
每卷数量3000只(3Kpcs/Reel)
每盒数量45000只(45Kpcs/BOX)
每箱数量180000只(180Kpcs/Cartons)

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MOT 5401
PNP-TRANSISTOR

SOT-23 Tape and reel


SOT-23 Embossed Carrier Tape

P0 P1

d
C

E
A

F
W

B
A
P A A-A

Dimensions are in millimeter


Pkg type A B C d E F P0 P P1 W
SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00

SOT-23 Tape Leader and Trailer


Trailer Tape Leader Tape
Components 100±2 Empty Pockets
50±2 Empty Pockets

SOT-23 Reel
D
W2
G

3000
H 2500
2000

1500

1000

500
D1

D2

W1

Dimensions are in millimeter


Reel Option D D1 D2 G H I W1 W2
7''Dia Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30

REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) G.W.(kg)
3000 pcs 7 inch 30,000 pcs 203×203×195 120,000 pcs 438×438×220

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