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STP20N10 N-Channel MOSFET Specs

The STP20N10 is an N-channel enhancement mode power MOS transistor with a maximum drain-source voltage of 100V and a continuous drain current of 20A. It features low on-resistance, high current capability, and is suitable for applications such as high-speed switching, motor control, and automotive environments. The device is characterized by its avalanche rugged technology and is tested for reliability under various conditions.

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26 views9 pages

STP20N10 N-Channel MOSFET Specs

The STP20N10 is an N-channel enhancement mode power MOS transistor with a maximum drain-source voltage of 100V and a continuous drain current of 20A. It features low on-resistance, high current capability, and is suitable for applications such as high-speed switching, motor control, and automotive environments. The device is characterized by its avalanche rugged technology and is tested for reliability under various conditions.

Uploaded by

teknikanahtar61
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© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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STP20N10

N - CHANNEL ENHANCEMENT MODE


POWER MOS TRANSISTOR

TYPE VDSS R DS(on) ID


STP20N10 100 V < 0.12 Ω 20 A

■ TYPICAL RDS(on) = 0.09 Ω


■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
3
■ HIGH CURRENT CAPABILITY 2
1
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED
CHARACTERIZATION TO-220
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS INTERNAL SCHEMATIC DIAGRAM
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit


V DS Drain-source Voltage (V GS = 0) 100 V
V DGR Drain- gate Voltage (R GS = 20 kΩ) 100 V
V GS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at T c = 25 o C 20 A
ID Drain Current (continuous) at T c = 100 o C 14 A
I DM (•) Drain Current (pulsed) 80 A
o
P tot Total Dissipation at T c = 25 C 105 W
Derating Factor 0.7 W/o C
o
T stg Storage Temperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 175 C
(•) Pulse width limited by safe operating area

December 1996 1/9


STP20N10

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.43 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
R thj-amb Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit


IA R Avalanche Current, Repetitive or Not-Repetitive 20 A
(pulse width limited by T j max, δ < 1%)
E AS Single Pulse Avalanche Energy 60 mJ
(starting T j = 25 o C, I D = I AR , V DD = 25 V)
E AR Repetitive Avalanche Energy 15 mJ
(pulse width limited by T j max, δ < 1%)
IA R Avalanche Current, Repetitive or Not-Repetitive 14 A
(T c = 100 o C, pulse width limited by T j max, δ < 1%)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit


V(BR)DSS Drain-source I D = 250 µA VGS = 0 100 V
Breakdown Voltage
I DS S Zero Gate Voltage V DS = Max Rating 1 µA
Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C 10 µA
I GSS Gate-body Leakage V GS = ± 20 V ± 100 nA
Current (V DS = 0)

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit


V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µA 2 2.9 4 V
R DS(on) Static Drain-source On V GS = 10V I D = 10 A 0.09 0.12 Ω
Resistance
I D(on) On State Drain Current V DS > I D(on) x R DS(on)max 20 A
V GS = 10 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit


gfs (∗) Forward V DS > I D(on) x R DS(on)max ID = 10 A 7 12 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz VGS = 0 800 1100 pF
C oss Output Capacitance 200 300 pF
C rss Reverse Transfer 40 60 pF
Capacitance

2/9
STP20N10

ELECTRICAL CHARACTERISTICS (continued)


SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit


t d(on) Turn-on Time V DD = 30 V ID = 3 A 25 35 ns
tr Rise Time R G = 50 Ω VGS = 10 V 75 110 ns
(see test circuit, figure 3)
(di/dt) on Turn-on Current Slope V DD = 80 V ID = 20 A 300 A/µs
R G = 50 Ω VGS = 10 V
(see test circuit, figure 5)
Qg Total Gate Charge V DD = 80 V ID = 20 A V GS = 10 V 30 45 nC
Q gs Gate-Source Charge 9 nC
Q gd Gate-Drain Charge 11 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit


t r(Vof f) Off-voltage Rise Time V DD = 80 V ID = 20 A 70 100 ns
tf Fall Time R G = 50 Ω VGS = 10 V 55 80 ns
tc Cross-over Time (see test circuit, figure 5) 130 185 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit


IS D Source-drain Current 20 A
I SDM (•) Source-drain Current 80 A
(pulsed)
VS D (∗) Forward On Voltage I SD = 20 A V GS = 0 1.6 V
t rr Reverse Recovery I SD = 20 A di/dt = 100 A/µs 125 ns
Time V DD = 20 V T j = 150 o C
Q rr Reverse Recovery (see test circuit, figure 5) 0.44 µC
Charge
I RRM Reverse Recovery 7 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Safe Operating Areas Thermal Impedance

3/9
STP20N10

Derating Curve Output Characteristics

Transfer Characteristics Transconductance

Static Drain-source On Resistance Gate Charge vs Gate-source Voltage

4/9
STP20N10

Capacitance Variations Normalized Gate Threshold Voltage vs


Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Turn-off Drain-source Voltage Slope Cross-over Time

5/9
STP20N10

Switching Safe Operating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/9
STP20N10

Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching


And Diode Recovery Times

7/9
STP20N10

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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STP20N10

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

© 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES


Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.

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