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SIMetrix SPICE Simulator Manual

The SIMetrix Simulator Reference Manual provides comprehensive documentation for the SIMetrix simulator, which combines analog and digital simulation capabilities. It details the simulator's operation in both GUI and non-GUI modes, the structure of netlists, and the types of analyses that can be performed. Additionally, the manual covers device references, command references, and various simulation techniques, including Monte Carlo analysis and digital simulation.

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© All Rights Reserved
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0% found this document useful (0 votes)
32 views315 pages

SIMetrix SPICE Simulator Manual

The SIMetrix Simulator Reference Manual provides comprehensive documentation for the SIMetrix simulator, which combines analog and digital simulation capabilities. It details the simulator's operation in both GUI and non-GUI modes, the structure of netlists, and the types of analyses that can be performed. Additionally, the manual covers device references, command references, and various simulation techniques, including Monte Carlo analysis and digital simulation.

Uploaded by

Ibrahima Sarr
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SIMetrix

SPICE and Mixed Mode Simulation

Simulator Reference Manual


Copyright ©1992-2007 Catena Software Ltd.

Trademarks
PSpice is a trademark of Cadence Design Systems Inc.
Star-Hspice is a trademark of Synopsis Inc.

Contact
Catena Software Ltd., Terence House, 24 London Road,
Thatcham, RG18 4LQ, United Kingdom

Tel.: +44 1635 866395


Fax: +44 1635 868322
Email: info@[Link]
Internet [Link]

Copyright © Catena Software Ltd. 1992-2007


SIMetrix 5.4 Simulator Reference Manual 13/10/07

Catena Software Ltd. is a member of the Catena group of companies.


See [Link]
Table of Contents

Table of Contents

Chapter 1 Introduction
The SIMetrix Simulator - What is it? ................................ 11
A Short History of SPICE................................................. 11

Chapter 2 Running the Simulator


Using the Simulator with the SIMetrix Schematic Editor.. 13
Adding Extra Netlist Lines ........................................ 13
Displaying Net and Pin Names................................. 13
Editing Device Parameters ....................................... 14
Editing Literal Values - Using shift-F7 ...................... 14
Running in non-GUI Mode ............................................... 15
Overview................................................................... 15
Syntax....................................................................... 15
Aborting .................................................................... 17
Reading Data............................................................ 17
Configuration Settings ..................................................... 17
Netlist Format .................................................................. 19
File Format ............................................................... 20
Language Declaration .............................................. 20
Comments ................................................................ 21
Device Lines ............................................................. 21
Simulator Controls .................................................... 23
Simulator Output.............................................................. 23
The List File .............................................................. 23
The Binary Data File................................................. 24
Output Data Names.................................................. 25

Chapter 3 Simulator Devices


Overview.......................................................................... 27
Using XSPICE Devices.................................................... 27
Vector Connections .................................................. 27
Connection Types..................................................... 28
Using Expressions ........................................................... 29
Overview................................................................... 29
Using Expressions for Device Parameters ............... 30
Using Expressions for Model Parameters ................ 30
Expression Syntax.................................................... 30
Optimisation.............................................................. 39
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Simulator Reference Manual

Subcircuits....................................................................... 40
Overview .................................................................. 40
Subcircuit Definition ................................................. 40
Subcircuit Instance................................................... 42
Passing Parameters to Subcircuits .......................... 42
Nesting Subcircuits .................................................. 43
Global Nodes ........................................................... 43
Subcircuit Preprocessing ......................................... 43
Model Binning.................................................................. 44
Overview .................................................................. 44
Defining Binned Models ........................................... 44
Example ................................................................... 44
Language Differences ..................................................... 45
Inline Comment ........................................................ 45
Unlabelled Device Parameters................................. 45
LOG() and PWR() .................................................... 46
Customising Device Configuration .................................. 46
Overview .................................................................. 46
What does the Device Configuration File do?.......... 47
Creating a Device Configuration File ....................... 47

Chapter 4 Analog Device Reference


Overview ......................................................................... 52
Arbitrary Source .............................................................. 52
Notes on Arbitrary Expression ................................. 53
Charge and Flux Devices......................................... 53
Arbitrary Source Examples ...................................... 54
PSpice and Star-Hspice syntax................................ 56
Bipolar Junction Transistor (SPICE Gummel Poon)........ 56
Notes........................................................................ 59
Bipolar Junction Transistor (VBIC without self heating) .. 60
Notes........................................................................ 64
Bipolar Junction Transistor (VBIC with self heating) ....... 64
Notes........................................................................ 65
Bipolar Junction Transistor (MEXTRAM) ........................ 65
Bipolar Junction Transistor (HICUM)............................... 65
Capacitor ......................................................................... 66
Capacitor with Voltage Initial Condition........................... 68
Description ............................................................... 68
Current Controlled Current Source.................................. 69
Polynomial Specification .......................................... 70
Current Controlled Voltage Source ................................. 70
Current Source ................................................................ 71

4
Table of Contents

Diode - Level 1 and Level 3 ............................................. 72


Diode - Soft Recovery...................................................... 75
Basic Equations........................................................ 76
References ............................................................... 77
GaAsFET ......................................................................... 77
Inductor (Ideal)................................................................. 78
Inductor (Saturable) ......................................................... 79
Notes on the Jiles-Atherton model ........................... 80
Notes on the non-hysteresis model .......................... 81
Implementing Transformers...................................... 81
Plotting B-H curves................................................... 81
References ............................................................... 81
Inductor with Current Initial Condition.............................. 82
Insulated Gate Bipolar Transistor .................................... 82
Junction FET.................................................................... 84
Lossy Transmission Line ................................................. 86
MOSFET.......................................................................... 88
BSIM3 MOSFETs ............................................................ 94
Notes ........................................................................ 94
Version Selector ....................................................... 95
Further Documentation............................................. 95
Process Binning........................................................ 95
BSIM4 MOSFETs ............................................................ 95
Notes ........................................................................ 95
Further Documentation............................................. 96
Process Binning........................................................ 96
EKV MOSFETs................................................................ 96
Notes ........................................................................ 96
MOSFET GMIN Implementation...................................... 97
PSP MOSFET.................................................................. 97
Resistor............................................................................ 98
Resistor - Hspice Compatible ........................................ 100
Resistance Calculation ........................................... 102
Capacitance Calculation......................................... 103
Temperature Scaling .............................................. 104
ACRESMOD Parameter ......................................... 104
Making the Hspice Resistor the Default ................. 104
S-domain Transfer Function Block ................................ 105
Description.............................................................. 106
Examples................................................................ 106
The Laplace Expression ......................................... 109
Other Model Parameters ........................................ 110
Limitations .............................................................. 110
The XSPICE S_XFER model ................................. 110

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Simulator Reference Manual

Subcircuit Instance ........................................................ 110


Transmission Line ......................................................... 111
Example ................................................................. 112
Voltage Controlled Current Source ............................... 112
Voltage Controlled Switch ............................................. 113
Voltage Controlled Switch Notes............................ 113
Voltage Controlled Voltage Source ............................... 114
Voltage Source.............................................................. 114
Pulse Source.......................................................... 115
Piece-Wise Linear Source...................................... 116
PWL File Source .................................................... 117
Sinusoidal Source .................................................. 118
Exponential Source ................................................ 119
Single Frequency FM ............................................. 120
Noise Source.......................................................... 120
Extended PWL Source........................................... 120
Mutual Inductor.............................................................. 122
Notes...................................................................... 123
Example ................................................................. 123
Philips Compact Models................................................ 123
Introduction ............................................................ 123
Using Philips Devices............................................. 125
Examples ............................................................... 126
Documentation ....................................................... 127

Chapter 5 Digital/Mixed Signal Device Reference


Digital Device Overview ................................................ 128
Common Parameters ............................................. 128
Delays .................................................................... 129
And Gate ....................................................................... 129
D-type Latch .................................................................. 131
D-type Flip Flop ............................................................. 133
Buffer............................................................................. 135
Frequency Divider ......................................................... 136
Digital Initial Condition................................................... 138
Digital Pulse .................................................................. 139
Digital Signal Source ..................................................... 140
Inverter .......................................................................... 143
JK Flip Flop ................................................................... 144
Arbitrary Logic Block ..................................................... 148
Nand Gate ..................................................................... 150
Nor Gate........................................................................ 151
Open-Collector Buffer.................................................... 152

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Table of Contents

Open-Emitter Buffer....................................................... 153


Or Gate .......................................................................... 154
Pulldown Resistor .......................................................... 155
Pullup Resistor............................................................... 156
Random Access Memory............................................... 156
Set-Reset Flip-Flop........................................................ 157
SR Latch ........................................................................ 160
State Machine................................................................ 162
Toggle Flip Flop ............................................................. 163
Tri-State Buffer .............................................................. 165
Exclusive NOR Gate...................................................... 167
Exclusive OR Gate ........................................................ 168
Analog-Digital Converter................................................ 169
Analog-Digital Interface Bridge ...................................... 172
Digital-Analog Converter................................................ 176
Digital-Analog Interface Bridge ...................................... 179
Controlled Digital Oscillator ........................................... 182
Analog-Digital Schmitt Trigger ...................................... 184

Chapter 6 Command Reference


Overview........................................................................ 186
General Sweep Specification......................................... 187
Overview................................................................. 187
Syntax..................................................................... 188
Multi Step Analyses ....................................................... 189
Overview................................................................. 189
Syntax..................................................................... 189
.AC................................................................................. 190
.ALIAS............................................................................ 192
.DC................................................................................. 193
.FILE and .ENDF ........................................................... 194
.FUNC............................................................................ 195
.GLOBAL ....................................................................... 196
.GRAPH ......................................................................... 196
Parameters ............................................................. 196
Using Multiple .GRAPH Controls............................ 200
Creating X-Y Plots .................................................. 200
Using .GRAPH in Subcircuits ................................. 201
Using Expressions with .GRAPH............................ 201
Plotting Spectra with .GRAPH ................................ 201
.IC .................................................................................. 202
Alternative Initial Condition Implementations.......... 203
.INC................................................................................ 203

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Simulator Reference Manual

.KEEP............................................................................ 203
.LIB ................................................................................ 206
SIMetrix Native Form ............................................. 206
HSPICE Form ........................................................ 206
.MODEL......................................................................... 207
.NODESET .................................................................... 210
.NOISE .......................................................................... 211
.OP ................................................................................ 214
.OPTIONS ..................................................................... 215
.PARAM......................................................................... 228
.POST_PROCESS ........................................................ 230
.PRINT........................................................................... 230
.PZ................................................................................. 233
.SENS............................................................................ 233
.SETSOA....................................................................... 233
Examples ............................................................... 237
.SUBCKT and .ENDS.................................................... 237
.TEMP ........................................................................... 238
.TF ................................................................................. 238
.TRACE ......................................................................... 240
.TRAN............................................................................ 241
Real Time Noise Analysis ............................................. 243

Chapter 7 Monte Carlo Analysis


Overview ....................................................................... 246
Specifying a Monte Carlo Run....................................... 246
Specifying a Single Step Monte Carlo Sweep............... 247
Log File.......................................................................... 247
Seeding the Random Number Generator...................... 248
Specifying Tolerances ................................................... 249
Overview ................................................................ 249
Distribution Functions............................................. 249
TOL, MATCH and LOT Device Parameters........... 253
Tolerance Models................................................... 254

Chapter 8 Convergence and Accuracy


Overview ....................................................................... 256
DC Operating Point ....................................................... 256
Overview ................................................................ 256
Source and GMIN Stepping ................................... 257
Pseudo Transient Analysis..................................... 258
Junction Initialised Iteration.................................... 260

8
Table of Contents

Using Nodesets ...................................................... 260


Transient Analysis ......................................................... 261
What Causes Non-convergence?........................... 261
Fixes for Transient Non-convergence .................... 262
DC Sweep...................................................................... 262
DC Operating Point Algorithms...................................... 263
Junction Initialised Iteration .................................... 263
Source Stepping ..................................................... 263
Diagonal GMIN Stepping........................................ 264
Junction GMIN Stepping......................................... 264
Pseudo Transient Analysis ..................................... 264
Controlling DC Method Sequence .......................... 265
Singular Matrix Errors .................................................... 265
Transient Analysis - ‘Time step too small’ Error ............ 266
Accuracy and Integration Methods ................................ 266
A Simple Approach................................................. 266
Iteration Accuracy................................................... 266
Time Step Control................................................... 268
Accuracy of AC analyses........................................ 269
Summary of Tolerance Options.............................. 269
Integration Methods - METHOD option .................. 270

Chapter 9 Digital Simulation


Overview........................................................................ 273
Logic States ................................................................... 273
State resolution table.............................................. 274
Analog to Digital Interfaces............................................ 274
How A-D Bridges are Selected............................... 276
Logic Families................................................................ 276
Logic Family Model Parameters. ............................ 277
Logic Compatibility Tables...................................... 277
Logic Compatibility File Format .............................. 278
Supported Logic Families ....................................... 279
Universal Logic Family ........................................... 280
Internal Tables........................................................ 280
Load Delay..................................................................... 280
Overview................................................................. 280
Output Resistance .................................................. 280
Input Delay ............................................................. 280
Wire Delay .............................................................. 281
Digital Model Libraries ................................................... 281
Using Third Party Libraries ..................................... 281
Arbitrary Logic Block - User Defined Models ................. 281

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Simulator Reference Manual

Overview ................................................................ 281


An Example............................................................ 281
Example 2 - A Simple Multiplier ............................. 284
Example 3 - A ROM Lookup Table ........................ 284
Example 4 - D Type Flip Flop................................. 285
Device Definition - Netlist Entry & .MODEL Parameters
285
Language Definition - Overview ............................. 287
Language Definition - Constants and Names ........ 287
Language Definition - Ports.................................... 287
Language Definition - Registers and Variables...... 289
Language Definition - Assignments ....................... 292
Language Definition - User and Device Values ..... 295
Diagnostics: Trace File........................................... 295
Mixed-mode Simulator - How it Works .......................... 296
Event Driven Digital Simulator ............................... 296
Interfacing to the Analog Simulator ........................ 297
Enhancements over XSPICE ........................................ 297

Chapter 10 SIMetrix vs SPICE

10
Chapter 1 Introduction

Chapter 1 Introduction

This manual provides full reference documentation for the SIMetrix simulator.
Essentially the simulator receives a netlist as its input and creates a binary data file and
list file as its output. The netlist defines the circuit topology and also specifies the
analyses to be performed by the simulator. The netlist may directly include any device
models required or these may be automatically imported from a device model library.

The simulator may be operated in GUI mode or non-GUI mode. GUI mode is the
normal method of operation and requires the SIMetrix front end. In non-GUI mode the
simulator runs stand alone in a non-interactive fashion and may be set to run at low
priority in the background.

The SIMetrix Simulator - What is it?


The SIMetrix simulator core comprises a direct matrix analog simulator closely
coupled with an event driven digital simulator. This combination is often described as
Mixed-Mode and has the ability to efficiently simulate both analog and digital circuits
together.

The analog simulator is a derivation of SPICE 3 developed by the CAD/IC group at the
University of California at Berkeley while the event driven digital simulator is based
on XSPICE from the Georgia Technical Research Institute. However, only about 50%
of the SIMetrix simulator code can be directly traced to these programs. We have
rewritten some parts while added our own original code to others. The additions and
changes we have made are to improve speed, add new functionality and improve
convergence.

We have not, however, implemented all of the original SPICE3 features. We have
omitted items that we feel are of limited use. A summary of the differences between
SIMetrix, SPICE2 and SPICE3 can be found in “SIMetrix vs SPICE” on page 300

A Short History of SPICE


SPICE is an acronym for Simulation Program with Integrated Circuit Emphasis. It
was developed by the University of California at Berkeley and it's origins can be traced
back to the late 1960s. A number of research groups at that time were working on ways
to simulate integrated circuits as it was becoming increasingly obvious that traditional
breadboarding techniques could not be used. The first program to emerge from
Berkeley had the unattractive name of CANCER and this was then developed into
what is now known as SPICE1. SPICE1 was first released in 1972 but was fairly
primitive. SPICE2 followed in 1975 and was a considerable improvement and in fact
had all the major elements used in current SPICE and SPICE-like analog simulators.
The final version of SPICE2 was SPICE2G.6 and was released in April 1983. SPICE2
was just a simulator and had no user interface in the modern sense. The input was a
netlist, usually prepared by hand, and the output was a line printer listing containing
time point values or crude plots using asterix characters.

From the beginning SPICE was made publicly and freely available in source code form
(in FORTRAN) and this led to its wide acceptance throughout the industry. In the early

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Simulator Reference Manual

1980s it was run mainly on DEC VAX machines with PC versions for DOS appearing
in the mid 1980s

SPICE3 started to appear at around the same time. SPICE3 is written in 'C' and was
developed for UNIX machines. It features a front end known as Nutmeg which
consists of a graphical waveform viewer and interactive command shell but no
schematic entry. The simulator itself is an improvement on SPICE2 but not a vast one
with only small developments to improve convergence problems. The last version of
SPICE3 to be released was SPICE3f.5.

12
Chapter 2 Running the Simulator

Chapter 2 Running the Simulator

Using the Simulator with the SIMetrix Schematic Editor


Full documentation on using the SIMetrix schematic editor for simulation is described
in the SIMetrix User's manual. However, just a few features of the schematic editor are
of particular importance for running the simulator and for convenience their
description is repeated here.

Adding Extra Netlist Lines


The analysis mode selected using the schematic editor's Simulator|Choose Analysis...
menu is stored in text form in the schematic's simulator command window. If you
wish, it is possible to edit this directly. Users familiar with SPICE syntax may prefer
this approach. Note that the text entered in the simulator command window and the
Choose Analysis dialog settings remain synchronised so you can freely switch between
the two methods.

To open the simulator command window, select the schematic then press the F11 key.
It has a toggle action, pressing it again will hide it. If you have already selected an
analysis mode using the Choose Analysis dialog, you will see the simulator controls
already present.

The window has a popup menu selected with the right key. The top item Edit file at
cursor will open a text editor with the file name pointed to by the cursor or selected text
item if there is one.

The simulator command window can be resized using the splitter bar between it and
the schematic drawing area.

You can add anything you like to this window not just simulator commands. The
contents are simply appended to the netlist before being presented to the simulator. So,
you can place .PARAM controls, device models, inductor coupling specifications,
.OPTION controls or simply comments. The Choose Analysis dialog will parse and
possibly modify analysis controls and some .OPTIONS settings but will leave
everything else intact.

Displaying Net and Pin Names


It is sometimes necessary to know the name used for a particular net on the schematic
to be referenced in a simulator control (such as .NOISE) or for an arbitrary source
input. There are two approaches:

• Find out the default name generated by the schematic editor's netlist generator.
To do this, place the mouse cursor over the net of interest then press control-S.
The net name will be displayed in the command shell's message window.
• Force a net name of your choice. For this, use a terminal or small terminal
symbol. These can be found under the Parts|Connectors menu. After placing on
the schematic, select it then press F7 to edit its name. This name will be used to
name the net to which it is connected.

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Simulator Reference Manual

Editing Device Parameters


To use any of the additional parameters in a schematic, use the Parameters button in
the dialog box opened by F7 or the equivalent menu. For example you see this box
when editing a resistor

Pressing the Parameters button will open another dialog from which you can edit
parameter values:

You can also bring up this box directly using the menu Parts|Edit Additional
Parameters....

Note you can only supply constant values by this method. If you wish to define a
parameter as an expression, you will need to use shift-F7 - see below.

Editing Literal Values - Using shift-F7


The above method is not infallible as it requires the schematic editor to know about the
device being edited. In some circumstances, this will require special properties to be
present on the symbol and these may have not been defined. (for example something to
tell the schematic what level a MOSFET is)

14
Chapter 2 Running the Simulator

Another situation where the usual device editing methods are unsuitable is when you
need to define a parameter as an expression.

In these situations you can use shift-F7. This will edit the device's literal value
including any model names exactly as it will be placed in the netlist. shift-F7 bypasses
all smart algorithms and presents you with the raw values and you must also supply
raw values. For example, here is what you might enter for a MOSFET referencing a
model called N1

N1 L={LL-2*EDGE} W={WW-2*EDGE}

Note the model name must be included.

Running in non-GUI Mode

Overview
The simulator can be run in a non-interactive non-GUI mode independently of the
front end. This is useful for running simulation ‘batches’ controlled by a proprietary
script or batch language such as shell scripts or DOS batch files.

Under Linux this allows a simulation to be run without an X-server.

Under Windows, the simulator will run as a ‘console mode’ application and no GUI
elements will be created.

When run in this mode, the simulator will read in the specified netlist, run the
simulation then close and return control to the calling program. It will generate a
binary data file and a list file.

Syntax
The command syntax is as follows:

SIM [/config "config_location"] [/gui mode] [/check]


[/an "analysis_line"] [/list list_filename] [/options "options"] [/nolist]
[/lowPriority] [/nodata] [/k] netlist_file [data_file]

config_location Location of file holding configuration settings. Configuration


settings include global options and global model library
locations. The value must be of the form:

PATH;pathname

pathname may use system symbolic path values such as


%EXEPATH%. See User’s Manual for details.

If not specified, the configuration settings will be taken from the


[Link] file. See the User’s Manual for details on where this
file is located.

Alternatively, you can specify the location using a setting in the


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Simulator Reference Manual

[Link] file. Add a value called SimConfig to the [Startup]


section and give it a value of:

PATH;pathname

The [Link] file must be located in the same directory as the


SIMetrix executable binary. ([Link] on Windows,
SIMetrix on Linux). See the User’s Manual for more
information on the [Link] file.

Note that the /config switch if present must always appear be the
first argument to the command.
mode Mode of operation. Default = -1. Valid values are -1, 0, 1 and 2
but only -1 and 1 are meaningful for stand-alone operation. 0
and 2 are used when starting the simulator process from the
front end. -1 (same as omitting /gui) runs the simulator in
console mode with all messages output to the console or
terminal window. 1 enables GUI mode where the simulator runs
in a stand-alone mode but displays a graphical status box
showing messages and simulator progress. This mode is used by
the ‘asynchronous’ menus in the front end.
analysis_line If /an switch is specified, analysis_line specifies the analysis to
be performed and overrides all analysis lines specified in the
netlist.
list_filename Name of list file. Default is main netlist file name with
extension .OUT. Enclose path name in quotes if it contains
spaces.
options List of options valid for .OPTIONS control.
netlist_file File name of netlist.
data_file File to receive binary data output.
/check If specified, the netlist will be read in and parsed but no
simulation will be run. Used to check syntax
/nolist If specified, no list file will be created
/lowPriority If specified, the simulator will be run as a low priority process,
i.e. in the background. Recommended for long runs.
/nodata Only vectors explicitly specified using .KEEP or .PRINT will
be output to the binary file. Equivalent to ‘.KEEP /nov /noi
/nodig’ in the netlist.
/k If specified, the program will not finally terminate until the user
has pressed enter and a message to that effect will be displayed.
Under Windows, if the program is not called from the DOS
prompt but from another program, a console will be created for
receiving messages. The console will close when the program
exits sometimes before the user has had a chance to read the
messages. This switch delays the exit of the program and hence
the destruction of the console.

16
Chapter 2 Running the Simulator

Aborting
Press cntrl-C - you will be asked to confirm. The simulation will be paused while
waiting for your response and will continue if you enter ‘No’. This is an effective
means of pausing the run if you need CPU cycles for another task, or you wish to copy
the data file. See “Reading Data” below.

Reading Data
A data file will be created for the simulation results as normal (see “The Binary Data
File” on page 24). You can read this file with the waveform viewer using the Load
Data menu. However, it is strongly recommended that the simulation is paused first by
pressing cntrl-C.

Important: if you read the data file before the simulation is complete or aborted, the file
entries that provide the size of each vector will not have been filled. This means that
the waveform viewer will have to scan the whole file in order to establish the size of
the vectors. This could take a considerable time if the data file is large.

Configuration Settings
Configuration settings consist of a number of persistent global options as well as the
locations for installed model libraries.

When the simulator is run in GUI mode, its configuration settings are controlled by the
front end and stored wherever the front ends settings are stored. See the User's Manual
for more details.

The settings when run in non-GUI mode are stored in a configuration file which in fact
defaults to the same location as the default location for the front end’s settings. You can
change this location using the /config switch detailed above (page 15)

The format of the configuration file is:

[Options]
option_settings

[Models]
model_libraries

Where:

option_settings These are of the form name=value and specify


a number of global settings. Boolean values are
of the form name= without a value. If the entry
is present it is TRUE if absent it is FALSE.
Available global settings are detailed below.
model_libraries A list of entries specifying search locations for
model libraries. These are of the form
name=value where name is a string and value
is a search location. The string used for name
is arbitrary but must be unique. Entries are

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Simulator Reference Manual

sorted alphabetically according to the name


and used to determine the search order. value is
a path name and may contain wildcards (i.e. '*'
and '?')

Global Settings

Name Type Default Description

SearchDefaultTol Boolean false If true, the model


library will be
searched for
Monte Carlo
default models
NoStopOnUnknownParam Boolean false If true, unknown
model parameters
will be ignored
MaxVectorBufferSize Numeric 32768 See “Data
Buffering” below
TotalVectorBufferSize Numeric Available RAM/10 See “Data
Buffering” below
TempDataDir String %STARTDIR% Location of
temporary binary
data file if data_file
is not specified on
command line
LibraryDiagnostics String Full Controls output of
messages relating
to model library
search. Specify
None to disable

Data Buffering

The simulator buffers data before writing it to disk. By doing so the binary data file can
be organised more efficiently allowing data to be recovered from it quickly. There is a
relationship between buffer size and read in time as illustrated by the following table.
This shows the time taken to read in a 14MByte vector from a 1GByte data file with
the system disk cache cleared. The tests were performed with three different buffer
sizes on two different systems. One system was a relatively old notebook computer
with an IDE disk system. The other was a modern machine with a high performance
SCSI Ultra 320 disk.

18
Chapter 2 Running the Simulator

System Buffer size Read time

IDE 32768 (default) 8.1 secs


250K 3.1 secs
1 Meg 2.8 secs
Ultra 320 32768 (default) 4.1 secs
250K 0.75 secs
1Meg 0.23 secs

Note that the buffer size referred to in the above table is for each vector.

By default, the simulator won't allocate more than 10% of your system RAM to vector
buffers. Clearly if you are running a large circuit and saving many vectors, the buffer
sizes could reduce to levels that would make data retrieval very slow. In this case you
may wish to consider increasing the memory that is allowed for these buffers. Two
configuration settings control the vector buffering. These are:

• MaxVectorBufferSize. This sets the maximum size that will be used for any
individual vector. The default is 32768 bytes. If you have a high performance
SCSI disk system, you may benefit from increasing this value
• TotalVectorBufferSize. This sets the maximum amount of memory in bytes used
for all buffers. It defaults to a value equal to 10% of your system RAM. This is
usually sufficient for most applications but if you are simulating a very large
circuit and have sufficient RAM you may like to increase this value
The disk will not be written to until the buffers are full. With an all analog circuit all
the buffers reach their full state at the same time so they all get written to disk at the
same time. If you have 2G of RAM and are simulating a large circuit, approximately
200M of data will be written to the disk at regular intervals. This will result in a pause
in the simulation coupled with a great deal of disk activity.

Note that both MaxVectorBufferSize and TotalVectorBufferSize may be set from the
front end using the Set command. See the User’s Manual for details.

Netlist Format
The SIMetrix netlist format follows the general format used for all SPICE and SPICE
compatible simulators. However, with so many SPICE derivatives and with two
significantly different versions of SPICE itself (SPICE 2 and SPICE 3) it is not
possible to define a standard SPICE format. SIMetrix has been developed to be as
compatible as possible with model libraries that can be obtained from external sources.
For discrete devices, models are usually SPICE 2 compatible but some use extensions
originally developed for PSpice. IC designers usually receive model files from
fabrication companies and these tend to be developed for Star-Hspice. SIMetrix is
compatible with all of these but simultaneous compatibility with all formats is not
technically possible due to a small number of syntax details - such as the character
used for in line comments. To overcome these minor difficulties, a language

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Simulator Reference Manual

declaration can be placed at the top of the netlist and any file included using .INC
(page 203) or the Star-Hspice variant of .LIB (page 206). This is described in the
following sections.

File Format
A complete netlist consists of:

• A title line
• Optional language declaration
• Device lines
• Control lines
• Comment lines
The title line must be the first line of the file and may be empty. The remaining lines -
with some exceptions - may be placed in any order

All other lines are defined by their first non-whitespace character as follows.

• Control lines begin with a period: '.'


• Comment lines begin with an asterix: '*'
• Device lines begin with a letter
A line is usually terminated with a new line character but may be continued using the
'+' continuation character. So if the first non-whitespace character is a '+' the line will
be considered to be an extension of the previous line. SPICE requires the '+' to be the
first character, SIMetrix allows whitespace (space or tab) to precede it.

Language Declaration
SIMetrix is able to read PSpice, Star-Hspice and native SIMetrix netlists, but in
some cases needs to be instructed what format netlist it is reading. Currently there are
three areas where simultaneous compatibility has not been possible. These are:

• Inline comment character.


• Unlabelled device parameters
• The meaning of LOG() and PWR() functions
SIMetrix can be instructed to use any of the three languages by using the language
declaration. This is one of:

*#SIMETRIX
*#HSPICE
*#PSPICE

The language declaration must be placed at the top of the file immediately below the
title line. It can also be placed in files referenced using .INC or the HSPICE version
of .LIB in which case it will apply only to that file and any others that it calls. A
language declaration placed anywhere else in a file will be ignored.

For details see “Language Differences” on page 45.

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Chapter 2 Running the Simulator

The *#SIMETRIX language declaration can also be supplied with a parameter to


specify the separator letter used for devices. See “Device Lines” section below for
details.

Comments
Any line other than a language declaration beginning with a '*' is defined as a comment
and will be ignored. Also anything between a semi-colon ';' ('$' in HSPICE mode) and
the end of the line will be treated as comment and will also be ignored. Some SPICE
simulators require the '*' character to be the first character of the line. SIMetrix allows
it to be preceded by white space (spaces and tabs).

Device Lines
Device lines usually follow the following basic form but each type of device tends to
have its own nuances:

Name nodelist value [parameters]

value may be an actual number e.g. in the case of passive components such as resistors,
or it may be a model name in the case of semiconductor devices such as bipolar
transistors. Models are defined using a .MODEL control line.

nodelist is a list of netnames. The number and order of these is device dependent. The
netname itself may consist of any collection of non-control ASCII characters except
whitespace and '.'. All other ASCII characters are accepted although it is suggested that
the following characters are avoided if possible:

\"%&+-*/^<>[]'@{}

If any of these characters are used in a netname, a special syntax will be needed to plot
any signal voltage on that net. This is explained in “Output Data Names” on page 25.
In addition the characters ‘[‘, ‘]’, ‘%’, ‘!’ and ‘~’ have a special meaning when used
with XSPICE devices and therefore should be avoided at all times.

The name is the circuit reference of the device. The first letter of this name determines
the type of device as shown in the table below.

The Pin Names column in the following table is relevant to the vector name used for
values of device pin current. See “Output Data Names” on page 25.

Letter Number Device Manual Pin Names


of pins Page

A Any XSPICE devices depends on


device
B 2 Arbitrary source 52 P, N
C 2 Capacitor 66 P, N

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Simulator Reference Manual

Letter Number Device Manual Pin Names


of pins Page

D 2 Diode 72 P, N
E 4 Voltage controlled voltage 114 P, N, CP, CN
source
F 2 Current controlled current 68 P, N
source
G 4 Voltage controlled current 112 P, N, CP, CN
source
H 2 Current controlled voltage 70 P, N
source
I 2 Fixed current source 71 P, N
J 3 JFET 84 D, G, S
K 0 Coupling for inductors 122
L 2 Inductor 78 P, N
M 4 MOSFET 88 D, G, S, B
N - Not used
O 4 Lossy transmission line 86 P1, N1, P2, N2
P - Not used
Q 3-5 Bipolar transistor 56 C, B, E, S, DT
R 2 Resistor 98 P, N
S 4 Voltage controlled switch 113 P, N, CP, CN
T 4 Lossless transmission line 111 P1, N1, P2, N2
U - Not used
V 2 Voltage source 114 P, N
W - Not used
X Any Subcircuit 110
Y - Not used
Z 3 GaAs FET 77 D, G, S
IGBT 82 C, G, E

To remove the naming restriction that this system imposes, SIMetrix supports an
extension to the above to allow the user to use any name for all devices. If the device
letter is followed by a dollar '$' symbol (by default but can be changed - see below), the
remainder of the name following the '$' will be used as the device name. E.g.:

Q$TR23

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Chapter 2 Running the Simulator

will define a bipolar transistor with the name TR23. All output generated by the
simulator will refer to TR23 not Q$TR23.

The above mechanism can be disabled and also the character can be changed by adding
a parameter to the language declaration (see page 20). To disable, add this to the top of
the netlist:

*#SIMETRIX sep=none

To change the character use:

*#SIMETRIX sep=character

character must be a single letter, anything else will be ignored. Although any character
will be accepted it should clearly not be alpha-numeric.

The above mechanism will also be disabled if HSPICE or PSPICE languages are
specified.

Simulator Controls
Instructions to the simulator other than device definitions and comments are referred to
as controls and always begin with a period '.' .

Full documentation for SIMetrix controls see “Command Reference” on page 186

Simulator Output

The List File


SIMetrix produces a list file by default. This receives all text output except for the
Monte Carlo log. This includes operating point results, model parameters, noise
analysis results, sensitivity analysis results, pole-zero analysis results and tabulated
vectors specified by .PRINT.

The list file is generated in the same directory as the netlist. It has the same name as the
netlist but with the extension .OUT.

There are a number of options that control the list file output.

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Simulator Reference Manual

Option name Description

PARAMLOG Valid values:

Full All instance and model parameter values reported


Given All user specified model parameters and
parameterised instance parameters
Brief Parameterised model and instance parameters
None None

Default = Given
EXPAND Flag. If specified, the netlist with all sub-circuits expanded will
be output to the list file
EXPANDFILE String. If specified the expand netlist will be output to the
specified file rather than the list file
NOMOD Same as PARAMLOG=none. Model parameters will not be
output
WIDTH Page width in number of characters. (The list file is formatted
assuming that it will be read or printed using a fixed width font
such as Courier.) The default is 80 but any value may be used
not just 80 and 132 as in SPICE 2.
OPINFO If set DC operating point info file is created for all analyses
(except .SENS). Normally it is created only for .OP analyses

The Binary Data File


The simulation data is stored in a binary data file. The format is proprietary to
SIMetrix and is not compatible with SPICE ‘raw’ files.

The name and location of the binary file depends on configuration settings and in what
mode the simulator is run. Usually, the file is located in the directory specified by the
TEMPDATADIR configuration setting (see page 17) and is named according to the
analysis type and appended with the extension .sxdat. [Link], [Link],
[Link] etc. The name and location can be overridden at the program command line
if operated in non-GUI mode or at the front end Run command line if run in GUI
mode.

Only the SIMetrix front end can read the simulator's binary data file. When run in GUI
mode, the file is automatically loaded and in fact it is not usually necessary to know
anything about it except perhaps when it grows very large and fills up your disk. If the
simulator is run in non-GUI mode, it becomes necessary to explicitly load the data into
the front end when the run is complete. This can be done with the command shell menu
File|Data|Load…. After the data is loaded, the results can be plotted in the usual
manner. See the User's Manual for further details.

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Chapter 2 Running the Simulator

Output Data Names


For transient, DC and AC analyses, SIMetrix calculates and stores the circuit’s node
voltages and device pin currents and these are all given unique names. If using probing
techniques with the front end's schematic editor you don't usually need to know
anything about the names used. However there are situations where it is necessary or
helpful to know how these names are derived. An example is when compiling an
expression relating voltages and currents to be used in a .PRINT control. Another is
when plotting results created by simulating a netlist that was not generated using the
schematic editor. The names used are documented in the following notes.

Top Level Node Voltages

The vector names used for node voltages at the top level (i.e. not in a subcircuit) are
simply the name of the node used in the netlist.

Subcircuit Node Voltages

For nodes within a subcircuit, the name is prefixed with the subcircuit reference and a
'.'. For example:

X1 N1 N2 N3 SubName
X2 N4 N5 N6 SubName

.SUBCKT 1 2 3 SubName
X3 N1 2 N3 SubName2
R1 VIN 0 1k
...
.ENDS

.SUBCKT 1 2 3 SubName2
V1 VCC 0 5
...
.ENDS

The internal node VIN in definition SubName referenced by X1 would be called


[Link]. The same node referenced by X2 would be called [Link]. The node VCC
defined in subcircuit SubName2 would be named [Link] and [Link] for X1
and X2 respectively.

Nodes with Non-standard Names

A non-standard node name is one that begins with a digit or which contains one or
more of the characters:

\"%&+-*/^<>[]'@{}

These are legal but introduce problems when accessing the voltage data that they carry.
The above characters can be used in arithmetic expressions so cause a conflict if used
as a node name. In order to access the voltage data on a node so named, use the Vec()
function:

Vec('node_name')

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Simulator Reference Manual

Example with .PRINT and node called V+

.PRINT TRAN {Vec('V+')}

A similar syntax is required when using the front end plotting commands.

Device Pin Currents

Device pin currents are named in the following form:

device_name#pin_name

For primitive devices (i.e. not sub-circuits) pin_name must comply with the table on
page 21. For example the current into the collector of Q23 would be Q23#c.

The pin names for sub-circuits depend on whether the pinnames: specifier (see
“Subcircuit Instance” on page 110) is included in the netlist entry for the device. If it is
the pin current name will be the name listed after pinnames:. If it isn't then they are
numbered in sequence starting from 1. The order is the same as the order they appear
in the netlist device line. For example, if the subcircuit line is:

X$U10 N1 N2 N3 N4 N5 LM324 pinnames: VINP VINN VP VN VOUT

The current into the last pin (connected to N5) would be U10#VOUT

(Note that 'X$' is stripped off as explained above - page 21).

If the netlist line is:

X$U10 N1 N2 N3 N4 N5 LM324

The same current would be U10#5

Internal Node Voltages

Some devices have internal nodes and the voltages on these are output by the
simulator. These are named in a similar manner to pin currents i.e.

device_name#internal_node_name

The internal_node_name depends on the device. For example, bipolar transistors


create an internal node for each terminal that specifies a corresponding resistance
parameter. So if the RE parameter is specified an internal node will be created called
emitter.

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Chapter 3 Simulator Devices

Chapter 3 Simulator Devices

Overview
This chapter is an introduction to the “Analog Device Reference” on page 52 and the
“Digital/Mixed Signal Device Reference” on page 128.

The device reference chapters describe all simulator devices at the netlist level. The
netlist consists of a list of component definitions, along with simulator commands,
which the simulator can understand. Simple components, such as resistors just need a
value to define them. Other more complicated devices such as transistors need a
number of parameters to describe their characteristics.

The device references includes details of all device and model parameters. Using the
schematic editor and model library you may not often need to read this section. Some
of the devices, however, have advanced options not directly supported by the user
interface. For example, many devices allow a local temperature to be specified. This
requires the component value to be appended with TEMP=…. This device parameter
and others are documented here.

Note that many parts either supplied with SIMetrix or available from component
manufacturers are implemented as subcircuits. These are circuit designs to simulate the
behaviour of high level devices such as opamps. SIMetrix (and all other SPICE
simulators) do not have an opamp device built in but use these macro models instead.
Full documentation for these devices is beyond the scope of this manual but can
sometimes be obtained from their suppliers.

Using XSPICE Devices


Some devices are implemented as part of the XSPICE ‘code modelling’ framework.
This framework introduces some new features at the netlist level not supported by
standard SPICE devices. These new features are described in this section.

Most of the devices that use this framework are digital or mixed signal devices and the
reference for these can be found at “Digital/Mixed Signal Device Reference” on
page 128. However there are three all analog devices that are also XSPICE devices.
These are:

• “Capacitor with Voltage Initial Condition” on page 68


• “Inductor with Current Initial Condition” on page 82
• “S-domain Transfer Function Block” on page 105

Vector Connections
Some models feature an arbitrary number of inputs or/and outputs. For example, an
AND gate can have any number of inputs. It would be inflexible to have a separate
model for every configuration of AND gate so a method of grouping connections
together has been devised. These are known as vector connections. Vector connections
are enclosed in square brackets. E.g. the netlist entry for an AND gate is:

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Simulator Reference Manual

Axxxx [ in_0 in_1 .. in_n ] out model_name

The pins in_0 in_1 to in_n form a single vector connection. Any number of pins may
be placed inside the square brackets, in fact the same model may be used for devices
with different numbers of inputs.

Some devices have a minimum and/or maximum number of pins that may be used in a
vector connection. This is known as vector bounds and if they apply will be listed in
the vector bounds column of the Connection Details table provided with every device
definition.

Connection Types
In the device references that follow, each has a table titled Connection Details. Each
table have a “Type” column and some have an “Allowed types” column. The type
referred to here is the type of electrical connection e.g. voltage, current, differential or
single-ended. Some devices allow some or all of their connections to be specified with
a range of types. For example, the analog-digital converter described on page 169 has a
single ended voltage input by default. However, using a simple modification to the
netlist entry, an ADC can be specified with a differential voltage input or even a
differential current. Changing the type of connection involves no changes to the
.MODEL control, only to the netlist entry.

The following table lists all the available types. The modifier is the text used to alter a
connection type at the netlist level. This is explained below

Description Modifier

Single ended voltage %v


Single ended current %i
Differential voltage %vd
Differential current %id
Digital %d
Grounded conductance (voltage input current output) %g
Grounded resistance (current input, voltage output) %h
Differential conductance (voltage input current output) %gd
Differential resistance (voltage input current output) %hd

With the models supplied with SIMetrix, only the first four in the above table are ever
offered as options. The others are used but are always compulsory, and an
understanding of their meaning is not necessary to make full use the system.

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Chapter 3 Simulator Devices

As well as type, all connections also have a flow referring to the direction of the signal
flow. This can be in, out or inout. Voltage, current and digital connections may be in or
out while the conductance and resistance connections may only be inout. Voltage
inputs are always open circuit, current inputs are always short circuit, voltage outputs
always have zero output impedance and current outputs always have infinite output
impedance.

The conductance connections are a combined voltage input and current output
connected in parallel. If the output is made to be proportional to the input, the
connection would be a conductor with a constant of proportionality equal to its
conductance, hence the name.

Similarly, the resistance connections are a combined current input and voltage output
connected in series. If the output is made to be proportional to the input, the connection
would be a resistor with a constant of proportionality equal to its resistance.

Changing Connection Type

If a model allows one or more of its connections to be given a different type, this can
be done by preceding the connection entry with the appropriate modifier listed in the
table above. For example if you wish to specify a 4 bit ADC with a differential voltage
input, the netlist entry would be something like:

A1 %vd ANALOG_INP ANALOG_INN CLOCK_IN [ DATA_OUT_0


DATA_OUT_1 DATA_OUT_2 DATA_OUT_3 ] DATA_VALID ADC_4

Using Expressions
Overview
Expressions consist of arithmetic operators, functions, variables and constants and may
be employed in the following locations:

• As device parameters
• As model parameters
• To define a variable (see “.PARAM” on page 228) which can itself be used in an
expression
• As the governing expression used for arbitrary sources (see page 52).

They have a wide range of uses. For example:

• To define a number of device or model parameters that depend on some common


characteristic. This could be a circuit specification such as the cut-off frequency
of a filter or maybe a physical characteristic to define a device model.
• To define tolerances used in Monte Carlo analyses.
• Used with an arbitrary source, to define a non-linear device.

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Simulator Reference Manual

Using Expressions for Device Parameters


Device or instance parameters are placed on the device line. For example the length
parameter of a MOSFET, L, is a device parameter. A MOSFET line with constant
parameters might be:

M1 1 2 3 4 MOS1 L=1u W=2u

L and W could be replaced by expressions. For example

M1 1 2 3 4 MOS1 L={LL-2*EDGE} W={WW-2*EDGE}

Device parameter expressions must usually be enclosed with either single quotation
marks ( ' ) double quotation marks ( " ) or braces ( '{' and '}' ). The expression need not
be so enclosed if it consists of a single variable. For example:

.PARAM LL=2u WW=1u


M1 1 2 3 4 MOS1 L=LL W=WW

Using Expressions for Model Parameters


The rules for using expressions for device parameters also apply to model parameters.
E.g.

.MODEL N1 NPN IS=is BF={beta*1.3}

Expression Syntax
The expression describing an arbitrary source consists of the following elements:

• Circuit variables
• Parameters
• Constants.
• Operators
• Functions
• Look up tables
These are described in the following sections

Circuit Variables

Circuit variables may only be used in expressions used to define arbitrary sources and
to define variables that themselves are accessed only in arbitrary source expressions.

Circuit variables allow an expression to reference voltages and currents in any part of
the circuit being simulated.

Voltages are of the form:

V(node_name)

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Chapter 3 Simulator Devices

Where node_name is the name of the node carrying the voltage of interest. If using the
schematic editor nodenames are normally allocated by the netlist generator. For
information on how to display and edit the schematic's node names, refer to
“Displaying Net and Pin Names” on page 13.

Currents are of the form:

I(source_name)

Where source_name is the name of a voltage source carrying the current of interest.
The source may be a fixed voltage source, a current controlled voltage source, a
voltage controlled voltage source or an arbitrary voltage source. It is legal for an
expression used in an arbitrary source to reference itself e.g.:

B1 n1 n2 V=100*I(B1)

Implements a 100 ohm resistor.

Parameters

These are defined using the .PARAM control. See page 228 for details. For example

.PARAM res=100
B1 n1 n2 V=res*I(B1)

Also implements a 100 ohm resistor.

For release 4 and later it is possible to put circuit variables in .PARAM controls. For
example:

.PARAM VMult = { V(a) * V(b) }


B1 1 2 V = Vmult + V(c)

Built-in Parameters

A number of parameter names are assigned by the simulator. These are:

Parameter Description
name

TIME Resolves to time for transient analysis. Resolves to 0


otherwise including during the pseudo transient operation
point algorithm.
TEMP Resolves to current circuit temperature
HERTZ Resolves to frequency during AC sweep and zero in other
analysis modes
PTARAMP Resolves to value of ramp during pseudo transient operating
point algorithm.

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Simulator Reference Manual

Constants

Apart from simple numeric values, arbitrary expressions may also contain the
following built-in constants:

Constant Value Description


name

PI 3.14159265358979323846 π
E 2.71828182845904523536 e
TRUE 1.0
FALSE 0.0
ECHARGE 1.6021918e-19 Charge on an electron in
coulombs
BOLTZ 1.3806226e-23 Boltzman's constant

If the simulator is run from the front end in GUI mode, it is also possible to access
variables defined on the Command Shell command line or in a script. The variable
must be global and enclosed in braces. E.g.

B1 n1 n2 V = V(n3, n3) * { global:amp_gain }

amp_gain could be defined in a script using the LET command. E.g. “Let
global:amp_gain = 100”

Operators

These are listed below and are listed in order of precedence. Precedence controls the
order of evaluation. So 3*4 + 5*6 = (3*4) + (5*6) = 42 and 3+4*5+6 = 3 + (4*5) + 6 =
29 as '*' has higher precedence than '+'.

Operator Description

~!- Digital NOT, Logical NOT, Unary minus


^ or ** Raise to power.
*, / Multiply, divide
+, - Plus, minus
>=, <=, > < Comparison operators
==, != or <> Equal, not equal

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Chapter 3 Simulator Devices

Operator Description

& Digital AND (see below)


| Digital OR (see below)
&& Logical AND
|| Logical OR

Comparison, Equality and Logical Operators

These are Boolean in nature either accepting or returning Boolean values or both. A
Boolean value is either TRUE or FALSE. FALSE is defined as equal to zero and
TRUE is defined as not equal to zero. So, the comparison and equality operators return
1.0 if the result of the operation is true otherwise they return 0.0.

The arguments to equality operators should always be expressions that can be


guaranteed to have an exact value e.g. a Boolean expression or the return value from
functions such as SGN. The == operator, for example, will return TRUE only if both
arguments are exactly equal. So the following should never be used:

v(n1)==5.0

v(n1) is never likely to be exactly 5.0. It may be 4.9999999999 or 5.00000000001 but


only by fluke will it be 5.0.

These operators are intended to be used with the IF() function described below.

Digital Operators

These are the operators '&', '|' and '~'. These were introduced in release 2.0 as a simple
means of implementing digital gates in the analog domain. Their function has largely
been superseded by gates in the event driven simulator but they are nevertheless still
supported.

Although they are used in a digital manner the functions implemented by these
operators are continuous in nature. They are defined as follows:

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Simulator Reference Manual

Expression Condition Result

out = x & y x<vtl OR y<vtl out = vl


x>vth AND y>vth out = vh
x>vth AND vth>y>vtl out = (y-vtl)*(vh-vl)/(vth-vtl)+vl
vtl<x< vth AND y>vth out = (x-vtl)*(vh-vl)/(vth-vtl)+vl
vtl<x< vth AND vth>y>vtl out = (y-vtl)*(x-vtl)*(vh-vl)/(vth-
vtl)2+vl
out = x|y x<vtl AND y<vtl out = vl
x>vth OR y>vth out = vh
x<vtl AND vth>y>vtl out = vh-(vth-y)*(vh-vl)/(vth-vtl)
vtl<x< vth AND y<vtl out = vh-(vth-x)*(vh-vl)/(vth-vtl)
vtl<x< vth AND vth>y>vtl out = vh-(vth-y)*(vth-x)*(vh-vl)/
(vth-vtl)2
out = ~x x<vtl out = vh
x>vth out = vl
vtl<x< vth out = (vth-x)/(vth-vtl)*(vh-vl)+vl

Where:

vth = upper input threshold


vtl = lower input threshold
vh = output high
vl = output low

These values default to 2.2, 2.1, 5 and 0 respectively. These values are typical for high
speed CMOS logic (74HC family). They can be changed with four simulator options
set by the .OPTIONS simulator control. These are respectively,
LOGICTHRESHHIGH, LOGICTHRESHLOW, LOGICHIGH, LOGICLOW

To change the lower input threshold to 1.9, add the following line to the netlist:

.OPTIONS LOGICTHRESHLOW=1.9

To find out how to add additional lines to the netlist when using the schematic editor,
refer to “Adding Extra Netlist Lines” on page 13.

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Chapter 3 Simulator Devices

Functions

Function Description

ABS(x) Magnitude of x. if x>=0 result=x otherwise result=-x


ACOS(x) Arc cosine. Result is in radians
ACOSH(x) Inverse COSH
ASIN(x) Arc sine. Result is in radians
ASINH(x) Inverse SINH
ATAN(x) Arc tangent. Result is in radians
ATAN2(x,y) =ATAN(x/y). Valid if y=0. Result in radians
ATANH(x) Inverse TANH
COS(x) Cosine of x in radians
COSH(x) Hyperbolic cosine
DDT(x) Differential of x with respect to time
EXP(x) ex
FLOOR(x) Next lowest integer of x.
IF(cond, x, y) if cond is TRUE result=x else result=y
IFF(cond, x, y) As IF(cond, x, y)
LIMIT(x, lo, hi) if x<lo result=lo else if x>hi result=hi else result=x
LN(x) Log to base e of x. If x<10-100 result=-230.2585093
LOG(x) Log to base 10 of x. If x<10-100 result=-100
LOG10(x) Log to base 10 of x. If x<10-100 result=-100
MAX(x, y) Returns larger of x and y
MIN(x,y) Returns smaller of x and y
PWR(x,y) |x|y
PWRS(x,y) if x>=0 |x|y else -|x|y
SDT(x) Integral of x with respect to time
SGN(X) If x>0 result = 1 else if x<0 result = -1 else result = 0
SIN(x) Sine of x in radians
SINH(x) Hyperbolic sine
SQRT(x) if x>=0 √x else √-x
STP(x) If x<=0 result = 0 else result = 1

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Simulator Reference Manual

Function Description

TAN(x) Tangent of x in radians


TANH(x) Hyperbolic tangent
U(x) as STP(x)
URAMP(x) if x<0 result =0 else result = x

Monte Carlo Distribution Functions

To specify Monte Carlo tolerance for a model parameter, use an expression containing
one of the following 12 functions:

Name Distribution Lot?

GAUSS Gaussian No
GAUSSL Gaussian Yes
UNIF Uniform No
UNIFL Uniform Yes
WC Worst case No
WCL Worst case Yes
GAUSSE Gaussian logarithmic No
GAUSSEL Gaussian logarithmic Yes
UNIFE Uniform logarithmic No
UNIFEL Uniform logarithmic Yes
WCE Worst case logarithmic No
WCEL Worst case logarithmic Yes

A full discussion on the use of Monte Carlo distribution functions is given in


“Specifying Tolerances” on page 249

Look-up Tables

Expressions may contain any number of look-up tables. This allows a transfer function
of a device to be specified according to - say - measured values without having to
obtain a mathematical equation. Look-up tables are specified in terms of x, y value
pairs which describe a piece-wise linear transfer function.

Look up tables are of the form:

TABLE[ xy_pairs ]( input_expression )


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Chapter 3 Simulator Devices

Where:
xy_pairs A sequence of comma separated pairs of constant values that
define the input and output values of the table. For each pair, the
first value is the x or input value and the second is the y or
output value. Only explicit numeric constants may be used.
Even internal constants such as PI may not be used.
input_expression Expression defining the input or x values of the table.

Example

The following arbitrary source definition implements a soft limiting function

B1 n2 n3 V=table[-10, -5, -5, -4, -4, -3.5, -3, -3, 3, 3, 4,


3.5, 5, 4, 10, 5](v(N1))

and has the following transfer function:

2
:b1_p / V

-2

-4

-20 -15 -10 -5 0 5 10 15

v 1/V 5V /div

It is possible to assign expressions to component values which are evaluated when the
circuit is simulated. This has a number of uses. For example you might have a filter
design for which several component values affect the roll off frequency. Rather than
recalculate and change each component every time you wish to change the roll of
frequency it is possible to enter the formula for the component's value in terms of this
frequency.

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Simulator Reference Manual

Example

{C1}

C1

1
{2/(2*pi*f 0*C1*alpha)} {2/(2*pi*f 0*C1*alpha)}
VOUT
R2 R1

AC 1 0
V1 E1
{C1*alpha*alpha/4}
C2

The above circuit is that of a two pole low-pass filter. C1 is fixed and R1=R2. The
design equations are:

R1=R2=2/(2*pi*f0*C1*alpha)
C2=C1*alpha*alpha/4

where f0 is the cut off frequency and alpha is the damping factor.

The complete netlist for the above circuit is:

V1 V1_P 0 AC 1 0
C2 0 R1_P {C1*alpha*alpha/4}
C1 VOUT R1_N {C1}
E1 VOUT 0 R1_P 0 1
R1 R1_P R1_N {2/(2*pi*f0*C1*alpha)}
R2 R1_N V1_P {2/(2*pi*f0*C1*alpha)}

Before running the above circuit you must assign values to the variables. This can be
done by one of three methods:

• With the .PARAM control placed in the netlist.


• With Let command from the command line or from a script. (If using a script you
must prefix the parameter names with global:)
• By sweeping the value with using parameter mode of a swept analysis (page 187)
or multi-step analysis (page 189).
Expressions for device values must be entered enclosed in curly braces ('{' and '}').

Suppose we wish a 1kHz roll off for the above filter.

Using the .PARAM control, add these lines to the netlist

.PARAM f0 1k
.PARAM alpha 1
.PARAM C1 10n

For more information on .PARAM see page 228

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Chapter 3 Simulator Devices

Using the Let command, you would type:

Let f0=1k
Let alpha=1
Let C1=10n

If you then wanted to alter the damping factor to 0.8 you only need to type in its new
value:

Let alpha=0.8

then re-run the simulator.

To execute the Let commands from within a script, prefix the parameter names with
global:. E.g. “Let global:f0=1k”

In many cases the .PARAM approach is more convenient as the values can be stored
with the schematic.

Optimisation

Overview
An optimisation algorithm may be enabled for expressions used to define arbitrary
sources and any expression containing a swept parameter. This can improve
performance if a large number of such expressions are present in a design.

The optimiser dramatically improves the simulation performance of the power device
models developed by Infineon. See “Optimiser Performance” below.

Why is it Needed?

The simulator’s core algorithms use the Newton-Raphson iteration method to solve
non-linear equations. This method requires the differential of each equation to be
calculated and for arbitrary sources, this differentiation is performed symbolically. So
as well calculating the user supplied expression, the simulator must also evaluate the
expression’s differential with respect to each dependent variable. These differential
expressions nearly always have some sub-expressions in common with sub-
expressions in the main equation and other differentials. Calculation speed can be
improved by arranging to evaluate these sub-expressions only once. This is the main
task performed by the optimiser. However, it also eliminates factors found on both the
numerator and denominator of an expression as well as collecting constants together
wherever possible.

Using the Optimiser

The optimiser will automatically be enabled for any arbitrary source or swept
expression that uses a function defined using .FUNC (see “.FUNC” on page 195). To
enable for all expressions, use the following option setting:

.OPTIONS optimise=2

Conversely, optimisation can be disable completely with:

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Simulator Reference Manual

.OPTIONS optimise=0

Optimiser Performance
The optimisation algorithm was added to SIMetrix primarily to improve the
performance of some publicly available power device models from Infineon. These
models make extensive use of arbitrary sources and many expressions are defined
using .FUNC.

The performance improvement gained for these model is in some cases dramatic. For
example a simple switching PSU circuit using a SGP02N60 IGBT ran around 5 times
faster with the optimiser enabled and there are other devices that show an even bigger
improvement.

Accuracy

The optimiser simply changes the efficiency of evaluation and doesn’t change the
calculation being performed in any way. However, performing a calculation in a
different order can alter the least significant digits in the final result. In some
simulations, these tiny changes can result in much larger changes in circuit solution.
So, you may find that switching the optimiser on and off may change the results
slightly.

Subcircuits

Overview
Subcircuits are a method of defining a circuit block which can be referenced any
number of times by a single netlist line or schematic device. Subcircuits are the method
used to define many device models such as op-amps.

Subcircuit Definition
Subcircuits begin with the .SUBCKT control and end with .ENDS. A subcircuit
definition is of the form:

.SUBCKT subcircuit_name nodelist [[params:] default_parameter_list]


definition_lines
.ENDS

subcircuit_name Name of the subcircuit and is used to reference


it in the main netlist.
nodelist Any number of node names and are used for
external connections. The subcircuit call (using
an ‘X’ device) would use a matching number
of nodes in the same order.
default_parameter_list List of parameters and their default values in
the form name=value. Subcircuit parameters
are explained in “Using Expressions” on

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Chapter 3 Simulator Devices

page 29.
definition_lines List of valid device and model lines. In
addition, .NODESET, .IC and .KEEP lines
may also be placed in a subcircuit.

Example

This is an example of an opamp subcircuit called SXOA1000. VINP, VINN VOUT


VCC and VEE are its external connections. The three .model lines define devices that
are local, that is, they are only accessible within the subcircuit definition.

.subckt SXOA1000 VINP VINN VOUT VCC VEE


I2 D2_N VEE 100u
I1 Q3_E VEE 100u
C1 VOUT R1_P 10p
D1 Q7_C D1_N D1
D2 D1_N D2_N D1
D3 VEE Q3_E D1
Q2 VEE D2_N VOUT 0 P1
Q3 Q3_C R3_P Q3_E 0 N1
Q1 VCC Q7_C VOUT 0 N1
Q6 Q3_C Q3_C VCC 0 P1
Q7 Q7_C Q5_C VCC 0 P1
R1 R1_P Q5_C 100
Q4 Q5_C R2_N Q3_E 0 N1
R2 VINP R2_N 1K
Q5 Q5_C Q3_C VCC 0 P1
R3 R3_P VINN 1K

.model N1 NPN VA=100 TF=1e-9


.model P1 PNP VA=100 TF=1e-9
.model D1 D

.ends

Where to Place Subcircuit Definition


Subcircuit definitions may be placed in a number of locations.

• Directly in the netlist. This is the best place if the subcircuit is specific to a
particular design. If you are entering the circuit using the schematic editor, see
“Adding Extra Netlist Lines” on page 13. to find out how to add additional lines
to the netlist.
• Put in a separate file and pull in to the schematic with .INC (page 203) control
placed in the netlist.
• Put in a library file and reference in schematic with SIMetrix form of .LIB
(page 206) control placed in the netlist. Similar to 2. but more efficient if library
has many models not used in the schematic. Only the devices required will be
read in.
• Put in a library file and install as a model library. See User's Manual for full
details.

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Simulator Reference Manual

Subcircuit Instance
Once a subcircuit has been defined, any number of instances of it may be created.
These are of the form:

Xxxxx nodelist sub_circuitname [ [params:|:] parameters]

nodelist List of nodes, each of which will connect to its corresponding


node in the subcircuit's definition. The number of nodes in the
instance must exactly match the number of nodes in the
definition.
sub_circuitname Name of the subcircuit definition.
parameters List of parameter names and their values in the form
name=value. These may be referenced in the subcircuit
definition. Subcircuit parameters are explained below.

Passing Parameters to Subcircuits


You can pass parameters to a subcircuit. Consider the filter example provided in
“Using Expressions” above. Supposing we wanted to define several filters with
different characteristics. We could use a subcircuit to define the filter but the values of
the components in the filter need to be different for each instance. This can be achieved
by passing the parameter values to each instance of the subcircuit.

So:

** Definition
.SUBCKT Filter IN OUT params: C1=1n alpha=1 f0=1k
C2 0 R1_P {C1*alpha*alpha/4}
C1 OUT R1_N {C1}
E1 OUT 0 R1_P 0 1
R1 R1_P R1_N {2/(2*pi*f0*C1*alpha)}
R2 R1_N IN {2/(2*pi*f0*C1*alpha)}
.ENDS

** Subcircuit instance
X1 V1_P VOUT Filter : C1=10n alpha=1 f0=10k

** AC source
V1 V1_P 0 AC 1 0

In the above example the parameters after params: in the .subckt line define default
values should any parameters be omitted from the subcircuit instance line. It is not
compulsory to define defaults but is generally recommended.

Note

In the syntax definition for both subcircuit definitions and subcircuit instances, the
params: specifier is shown as optional. This is for compatibility with Star-Hspice
and is new for release 4. If params: is included the '=' separating the parameter names
and their values becomes optional.

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Chapter 3 Simulator Devices

Nesting Subcircuits
Subcircuit definitions may contain both calls to other subcircuits and local subcircuit
definitions.

If a subcircuit definition is placed within another subcircuit definition, it becomes


local. That is, it is only available to its host subcircuit.

Calls to subcircuits may not be recursive. A subcircuit may not directly or indirectly
call its own definition.

Global Nodes
Sometimes it is desirable to refer to a node at the circuit's top level from within a
subcircuit without having to explicitly pass it. This is sometimes useful for supply
rails.

SIMetrix provides three methods.

• '#' prefix. Any node within a subcircuit prefixed with '#' will connect to a top
level node of the same name without the '#' prefix.
• '$g_' prefix. Any node in the circuit prefixed '$g_' will be treated as global
• Using .GLOBAL see page 196

The second approach is compatible with PSpice. The third approach is compatible
with Star-Hspice

Note the first two approaches are subtly different. In the second approach the '$g_'
prefix must be applied to all connected nodes, whereas in the first approach the '#'
prefix must be applied only to subcircuit nodes.

Subcircuit Preprocessing
SIMetrix features a netlist preprocessor that is usually used for SIMPLIS simulations
and was developed for that purpose. The preprocessor has some features that aren’t
available in the native simulator and for this reason it would be useful to be able to use
the preprocessor for SIMetrix simulations.

It is not necessary to apply the preprocessor to the entire netlist. Any subcircuit call
that defines preprocessor variables using the ‘vars:’ specifier will be passed to the
preprocessor. For example:

X$C1 R1_P 0 ELEC_CAP_L13 vars: LEVEL=3 CC=1m


+ RSH_CC=1Meg IC=0 RESR=10m LESL=100n USEIC=1

calls the ELEC_CAP_L13 subcircuit but passes it through the preprocessor first. This
model is a model for an electrolytic capacitor and uses a number of .IF controls to
select model features according to the LEVEL parameter.

The preprocessor also provides a means of generating multiple devices using .WHILE.
For information on the preprocessor, see the SIMPLIS Reference Manual. A PDF
version of this is available on the install CD.

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Simulator Reference Manual

Model Binning

Overview
Some devices can be binned. This means that a number of different model definitions
can be provided for the same device with each being valid over a limited range of some
device parameter or parameters. The simulator will automatically select the
appropriate model according to the value given for the device parameters.

Currently only BSIM3 MOSFETs may be binned. The binning is controlled by the
length and width device parameters (L and W) while the LMIN, LMAX, WMIN and
WMAX model parameters specify the valid range for each model.

Important Note
The binned models should be placed directly in the netlist or called using either .INC
or the Star-Hspice form of .LIB. They will not work correctly when installed as a
model library or accessed with the SIMetrix form of .LIB.

Defining Binned Models


Binned models are defined as a set consisting of two or more .MODEL definitions.
Each of the definitions must be named using the following format:

root_name.id

root_name Name used by the device to call the model. Must be the same for
all model definitions in a set
id Arbitrary name that must be unique for each model in a set. This
would usually be a number but this is not a requirement
Each model definition must also contain a MIN/MAX parameter pair for each bin
control parameter. For the BSIM3 MOSFET there are two bin control parameters,
namely L and W with corresponding MIN/MAX pairs LMIN/LMAX and WMIN/
WMAX. For a binned BSIM3 model, all four must be present. These parameters define
the range of L and W over which the model is valid. When a model is required, the
simulator searches all models with the same root_name for a definition whose LMIN/
LMAX and WMIN/WMAX parameters are compatible with the device's L and W.

Example
.MODEL N1.1 NMOS LEVEL=49 ... parameters ...
+ LMIN=1u LMAX=4u WMIN=1u WMAX=4u

.MODEL N1.2 NMOS LEVEL=49 ... parameters ...


+ LMIN=4u LMAX=10u WMIN=1u WMAX=4u

.MODEL N1.3 NMOS LEVEL=49 ... parameters ...


+ LMIN=1u LMAX=4u WMIN=4u WMAX=10u

.MODEL N1.4 NMOS LEVEL=49 ... parameters ...


+ LMIN=4u LMAX=10u WMIN=4u WMAX=10u

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Chapter 3 Simulator Devices

** This device will use N1.1


M1 1 2 3 4 N1 L=2u W=2u

** This device will use N1.2


M2 1 2 3 4 N1 L=6u W=2u

** This device will use N1.3


M3 1 2 3 4 L=2u W=7u

** This device will use N1.4


M4 1 2 3 4 L=6u W=7u

Language Differences
SIMetrix is compatible with some PSpice and Star-Hspice extensions mainly so
that it can read external model files. Some aspects of these alternative formats are
incompatible with the SIMetrix native format and in such cases it is necessary to
declare the language being used. See “Language Declaration” on page 20 for details on
how to do this.

The following sections describe the incompatibilities between the three languages.

Inline Comment
Star-Hspice uses the dollar ('$') symbol for inline comments while SIMetrix and
PSpice use a semi-colon (';'). The language declaration described above determines
what character is used.

Unlabelled Device Parameters


The problem with unlabelled device parameters is illustrated with the following
examples.

The following lines are legal in Star-Hspice mode but illegal in SIMetrix mode.

.PARAM area=2
Q1 C B E S N1 area

Q1 will have an area of 2. Conversely the following is legal in SIMetrix but is illegal in
Star-Hspice:

.PARAM area=2
Q1 C B E S N1 area area

Again Q1 has an area of 2.

The problem is that SIMetrix does not require '=' to separate parameter names with
their values whereas Star-Hspice does. area is a legal BJT parameter name so in the
first example SIMetrix can't tell whether area refers to the name of the BJT parameter
or the name of the .PARAM parameter defined in the previous line. Star-Hspice can
tell the difference because if area meant the BJT parameter name it would be followed
by an '='.

This line is legal and will be correctly interpreted in both modes

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Simulator Reference Manual

.PARAM area=2
Q1 C B E S N1 area=area

Although Hspice always requires the '=' to separate parameter names and values, it
continues to be optional in SIMetrix even in Hspice mode. It only becomes
compulsory where an ambiguity needs to be resolved as in the second example above.

LOG() and PWR()


The LOG() function means log to the base 10 in SIMetrix but in PSpice and Star-
Hspice means log to the base e. PWR() in PSpice and SIMetrix means |x|y whereas
in Star-Hspice it means “if x>=0 |x|y else -|x|y”. The language declaration only affects
the definition when used in expressions to define model and device parameters. When
used in arbitrary source expressions, the language assumed is controlled by the method
of implementing the device as follows:

SIMetrix:
B1 1 2 V=expression

PSpice
E1 1 2 VALUE = {expression }

Star-Hspice
E1 1 2 VOL = 'expression'

Note that the function LN() always means log to base e and LOG10() always means
log to base 10. We recommend that these functions are always used in preference to
LOG to avoid confusion.

Customising Device Configuration

Overview
Models for discrete devices and for integrated circuit processes come from a variety of
sources and are often designed for particular simulators, in particular, PSpice and
Hspice. These simulators are not generally compatible with each other so it is not easy
for SIMetrix to be simultaneously compatible with both. Further, SIMetrix itself needs
to retain backward compatibility with its own earlier versions.

An example of conflict can be found with the standard diode. The SIMetrix diode with
no level parameter specified is mainly compatible with PSpice. But the standard
Hspice diode is quite different and not compatible. The SIMetrix Level=3 diode is
however compatible with Hspice both for level=1 and level=3. To use Hspice level=1
diode models the user has to edit the model so that level is changed to 3.

It is not always convenient to modify model files and for this reason SIMetrix provides
an alternative in the form of the device configuration file. This provides a means of
changing the access to particular device model including re-mapping level numbers.
The following section describes how to setup a device configuration file.

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Chapter 3 Simulator Devices

What does the Device Configuration File do?


The device configuration file (DCF) edits or adds to an internal table used to map
model names, level numbers and access letters to an actual device model. All device
models (that is the binary code that implements the device equations) have an internal
name that is used to uniquely identify it, but this name is not used externally. Instead
.MODEL statements use their own name (e.g. nmos, pnp) coupled with an optional
LEVEL parameter to define the actual device referred to. For example, the MOS level
3 device is referred internally as “MOS3” but the .MODEL statements use the names
NMOS or PMOS and set the LEVEL parameter to 3. The mapping between NMOS
and LEVEL 3 to “MOS3” is defined in an internal table which can be modified by
specifying a device configuration file.

The DCF can add new entries to the table so providing additional methods of accessing
a device. It can also modify existing entries to point to a new device.

Creating a Device Configuration File


The device configuration file (DCF) path and name are defined by the option variable
DevConfigFile. By ‘option variable’, we mean the variables assigned using the
command line Set command not simulator options set by .OPTIONS. The default value
for the setting is %SHAREPATH%/[Link], %SHAREPATH% resolves to
the support directory under the SIMetrix root in windows and the share directory in
Linux.

Format

Each line in the DCF maps a single device and consists of up to 4 assigned parameters.
These are described in the following table.

Keyword Description

ModelName Model name used in .MODEL control


Device Internal device name. See table
Level Level parameter
Letter Device letter

To modify an existing mapping, you only need to provide the model name, device and
level. The modelname and level must point to an existing combination that is already
in use (see table on page 48), e.g. ModelName=D and Level=1, and device would then
be set to the new device that this combination is to point to, e.g. Diode3. So this is what
the line would be:

ModelName=D,Level=1,Device=Diode3

The above would make level 1 diodes use the same model as level=3. Here is another
example:

ModelName=R,Level=0,Device=HspiceRes

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Simulator Reference Manual

Level=0 is the level value when the LEVEL parameter is not specified. In the case of
resistors, no .MODEL statement is required at all, so the above line will change the
default model used for all resistors to the Hspice model instead of the native SIMetrix
model.

It is also possible to add a new mapping in which case the level and modelname
parameters must be currently unused. Also when creating a new mapping the ‘Letter’
parameter must be specified. ‘Letter’ is the first letter of the component reference
traditionally used to identify the type of device in SPICE netlists. For example ‘Q’
refers to BJTs and ‘D’ refers to diodes.

For example, the following entries define LEVEL=55 as a valid level for accessing the
EKV model:

ModelName=NMOS,Level=55,Device=EKV,Letter=M
ModelName=PMOS,Level=55,Device=EKV,Letter=M

Note that two entries are required in order to support both n-channel and p-channel
devices. The above doesn’t change the existing level (44) it adds an additional level.
Both 44 and 55 will be accepted and be equivalent.

When defining a new mapping the letter must be specified and usually this should be
the letter conventionally used for the class of device. If defining a new mapping for a
MOSFET, the letter ‘M’ should be used, for a diode the letter ‘D’ should be used and
so on.

The following table shows all built in device mappings. Note that this describes
devices that are built in to the simulator binary. A number of devices are defined in
external DLLs. Mappings for these are shown in the next table.

Device Mappings for Internal Devices

ModelName Device Level Letter

npn BJT 0 Q
pnp BJT 0 Q
npn BJT 1 Q
pnp BJT 1 Q
lpnp BJT 0 Q
lpnp BJT 1 Q
d Diode 0 D
d Diode 1 D
d Diode3 3 D
njf JFET2 0 J
njf JFET 1 J

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Chapter 3 Simulator Devices

ModelName Device Level Letter

pjf JFET2 0 J
pjf JFET 1 J
nmf MES 0 Z
pmf MES 0 Z
nmos Mos1 0 M
nmos Mos1 1 M
nmos Mos2 2 M
nmos Mos3 3 M
nmos Vmos 17 M
pmos Mos1 0 M
pmos Mos1 1 M
pmos Mos2 2 M
pmos Mos3 3 M
pmos Vmos 17 M
r Resistor 0 R
res Resistor 0 R
r HspiceRes 2 R
c Capacitor 0 C
cap Capacitor 0 C
sw Switch 0 S
vswitch Switch 0 S
ltra LTRA 0 O

Device Mappings for External Devices:

ModelName Device Level Letter

nmos BSIM3 8 M
pmos BSIM3 8 M
nmos BSIM3psp 7 M
pmos BSIM3psp 7 M
nmos MOS49 49 M
pmos MOS49 49 M
nmos MOS53 53 M

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Simulator Reference Manual

ModelName Device Level Letter

pmos MOS53 53 M
nmos BSIM4V4.5 14 M
pmos BSIM4V4.5 14 M
nmos EKV 44 M
pmos EKV 44 M
nmos MNE_902 102 M
pmos MPE_902 102 M
nmos MNE_903 103 M
pmos MPE_903 103 M
nmos MN_902 202 M
pmos MP_902 202 M
nmos MN_903 203 M
pmos MP_903 203 M
nmos MN_3002 302 M
pmos MP_3002 302 M
nmos MN_40 400 M
pmos MP_40 400 M
nmos MNE_1100 500 M
pmos MPE_1100 500 M
nmos MN_1100 600 M
pmos MP_1100 600 M
nmos MNE_1101 501 M
pmos MPE_1101 501 M
nmos MN_11010 601 M
pmos MP_11010 601 M
nmos MN_11011 611 M
pmos MP_11011 611 M
nmos MN_3100 700 M
pmos MP_3100 700 M
npn TNS_503 103 Q
pnp TPS_503 103 Q
npn TNS_504 104 Q
pnp TPS_504 104 Q

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Chapter 3 Simulator Devices

ModelName Device Level Letter

npn TNST_504 1104 Q


pnp TPST_504 1104 Q
pnp TPL_500 200 Q
npn VBIC 4 Q
pnp VBIC 4 Q
npn VBIC_Thermal 1004 Q
pnp VBIC_Thermal 1004 Q
d JC_1 101 Q
d D_500 200 Q
core CORE 0 L
corenh CORENH 0 L
NIGBT HEFNER_IGBT 0 Z
srdio LM_DIODE 0 D

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Simulator Reference Manual

Chapter 4 Analog Device Reference

Overview
This chapter provides the full details of every option and parameter available with
every primitive analog device that the simulator supports.

For documentation on digital and mixed signal devices supplied with SIMetrix, please
see “Digital/Mixed Signal Device Reference” on page 128.

Arbitrary Source
Netlist Entry

Voltage source:
Bxxxx n+ n- [MIN=min_value] [MAX=max_value] V=expression
Current source:
Bxxxx n+ n- [MIN=min_value] [MAX=max_value] I=expression
Charge source:
Bxxxx n+ n- Q=expression
Flux source:
Bxxxx n+ n- FLUX=expression

An arbitrary source is a voltage or current source whose output can be expressed as an


arbitrary relationship to other circuit voltages or currents.

expression Algebraic expression describing voltage or current output in


terms of circuit nodes or sources. See “Expression Syntax” on
page 30 for full details.
min_value Minimum value of source
max_value Maximum value of source
Bxxxx Component reference
n+ Positive output node.
n- Negative output node.

The small-signal AC behaviour of the non-linear source is a linear dependent source


with a proportionality constant equal to the derivative (or derivatives) of the source at
the DC operating point.

Note that if MIN and/or MAX parameters are specified, they must precede the defining
expression.

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Chapter 4 Analog Device Reference

Charge and flux sources implement capacitors and inductors respectively. See “Charge
and Flux Devices” below for details.

If the source is a current, the direction of flow is into the positive node (n+).

Notes on Arbitrary Expression


It is generally beneficial if the expression used for an arbitrary source is well
conditioned. This means that it is valid for all values of its input variables (i.e. circuit
voltages and currents) and that it is continuous. It is also desirable - although rarely
absolutely necessary - for the function to be continuous in its first derivative; i.e. it
does not have any abrupt changes in slope.

If the expression is used in a feedback loop then these conditions are more or less
essential for reliable and rapid convergence. If the arbitrary source is used open loop
then these conditions can be relaxed especially if the input signal is well defined e.g.
derived directly from a signal source.

Some functions are not continuous in nature. E.g. the STP() and SGN() functions are
not. These may nevertheless be used in an expression as long as the end result is
continuous.

Similarly, the IF() function should be used with care. The following IF() function is
continuous:

IF(v1>v2, 0, (v1-v2)*2)

When v1=v2 both true and false values equate to zero so the function has no abrupt
change. The function still has a discontinuous first derivative with respect to both v1
and v2 which is still undesirable but will work satisfactorily in most situations.

The following example is not continuous:

IF(v1>v2, 0, 5)

The result of this will switch abruptly from 0 to 5 when v1=v2. This is not something
that the simulator can be guaranteed to handle and cannot be implemented in real life.

A better, albeit less intuitive method, of achieving the intent of the above is:

(TANH((v2-v1)*factor)+1)*2.5+2.5

where factor is some number that determines the abruptness of the switching action.
For a value of 147, 95% of the full output will be achieved with just 10mV overdrive.

Charge and Flux Devices


From release 4 it is possible to define capacitors and inductors directly using the
arbitrary source. Capacitors must be defined in terms of their charge and inductors by
their flux. These are defined in the same as voltage and current arbitrary sources but
using ‘q’ or ‘flux’ instead of ‘v’ or ‘i’. E.g. the following defines a simple linear
capacitor:

B1 n1 n2 Q = C*V(n1,n2)

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Simulator Reference Manual

Similarly a linear inductor is:

B1 n1 n2 flux = L * i(B1)

The main benefit of this feature is that it makes it possible to define non-linear
capacitors and inductors directly. Previously, this was only possible by making up a
circuit consisting of a number of components including a primitive capacitor.

As with voltage and current arbitrary sources, it is possible to use any combination of
voltages and currents in the expression. So, for example, the following defines a
transformer:

Bprimary p1 p2 flux = Lp*i(Bprimary) + M*i(Bsecondary)


Bsecondary s1 s2 flux = Ls*i(Bsecondary) + M*i(Bprimary)

Arbitrary Source Examples

Example 1 - Ideal Power Converter

This examples also demonstrates the use of expressions within subcircuits. (See
“Using Expressions” on page 29)

The following subcircuit implements an idealised power converter with an efficiency


of eff and whose output voltage is proportional to the input voltage (vinn,vinp)
multiplied by the control voltage (vcp,vcn). It is intended to simulate the voltage/
current characteristics of a switching power converter.

.subckt powerconv voutp voutn vinp vinn vcp vcn


biin1 vinp vinn i=-v(voutp,voutn)/v(vinp,vinn)*i(vout1)/{eff}
vout1 bmult1_n voutn 0
bmult1 voutp bmult1_n v=v(vinp,vinn)*v(vcp,vcn)
r1 vcp vcn 1meg
.ends

Once again, with an appropriate schematic symbol, the device can be placed on the
schematic as a block as shown below:

54
Chapter 4 Analog Device Reference

D2 U1

ideal R5 1000
1meg
C1
270u
powerconv : ef f =0.7 R1
v1 V2 E1 1K
pulse (100 0 0 1m) 12

Example 2 - Voltage Multiplier

The expression for an arbitrary source must refer to other voltages and/or currents on
the schematic. Currents are referenced as voltage sources and voltages as netnames.
Netnames are usually allocated by the netlister. For information on how to display and
edit the schematic's netnames, refer to “Displaying Net and Pin Names” on page 13.

R4
n1
10k
1K B1 1K
R1 V=V(n2)*V(n1) R2

n2
1K
R3

In the above circuit the voltage across B1 will be equal to the product of the voltages at
nodes n1 and n2.

An alternative approach is to define the arbitrary source within a subcircuit. E.g.

.subckt MULT out in1 in2


B1 out 0 V=V(in1)*V(in2)
.ends

which can be added to the netlist manually. (To find out how to add additional lines to
the netlist when using the schematic editor, refer to “Adding Extra Netlist Lines” on
page 13). A symbol could be defined for it and then placed on the schematic as a block
as shown below:

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Simulator Reference Manual

R4
1K

R1 X1
1K

R2
1K
R3 MULT
1K

Example 3 - Voltage comparator


B3 q3_b 0 V=atan(V(n1,n2)*1000)

This can also be added to the schematic in the same way as for the multiplier described
above.

PSpice and Star-Hspice syntax


SIMetrix supports the PSpice and Hspice syntax for arbitrary sources. This is for
compatibility with some manufacturers device models. For PSpice the VALUE = and
TABLE = devices are supported and for Star-Hspice VOL= and CUR= are
supported.

Bipolar Junction Transistor (SPICE Gummel Poon)


Netlist Entry

Qxxxx collector base emitter [substrate] modelname [area] [OFF]


[IC=vbe,vce] [TEMP=local_temp] [M=mult] [DTEMP=dtemp]

collector Collector node name


base Base node name
emitter Emitter node name
substrate Substrate node name
modelname Name of model. Must begin with a letter but can contain any
character except whitespace and ' . ' .
area Area multiplying factor. Area scales up the device. E.g. an area
of 3 would make the device behave like 3 transistors in parallel.
Default is 1.
OFF Instructs simulator to calculate operating point analysis with
device initially off. This is used in latching circuits such as

56
Chapter 4 Analog Device Reference

thyristors and bistables to induce a particular state. See “.OP” on


page 214 for more details.
vbe,vce Initial conditions for base-emitter and collector-emitter
junctions respectively. These only have an effect if the UIC
parameter is specified on the .TRAN control (see “.TRAN” on
page 241).
local_temp Local temperature. Overrides specification in .OPTIONS
(page 215) or .TEMP (page 238) controls.
mult Device multiplier. Equivalent to putting mult devices in parallel.
dtemp Differential temperature. Similar to local_temp but is specified
relative to circuit temperature. If both TEMP and DTEMP are
specified, TEMP takes precedence.

NPN BJT Model Syntax

.model modelname NPN ( parameters )

PNP BJT Model Syntax

.model modelname PNP ( parameters )

Lateral PNP BJT Model Syntax

.model modelname LPNP ( parameters )

BJT Model Parameters

The symbols ' × ' and ' ÷ ' in the Area column means that the specified parameter
should be multiplied or divided by the area factor respectively.

Name Description Units Default Area

IS Transport saturation current A 1e-16 ×


BF Ideal maximum forward beta 100
NF Forward current emission 1.0
coefficient
VAF Forward Early voltage V ∞
IKF Corner for forward beta high A ∞ ×
current roll-off
ISE B-E leakage saturation current A 0 ×
NE B-E leakage emission coefficient 1.5
BR Ideal maximum reverse beta 1
NR Reverse current emission 1
coefficient

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Simulator Reference Manual

Name Description Units Default Area

VAR Reverse Early voltage V ∞


IKR Corner for reverse beta high A ∞ ×
current roll-off
ISC B-C leakage saturation current A 0 ×
NC B-C leakage emission coefficient 2
RB Zero bias base resistance Ω 0 ÷
IRB Current at which base resistance A ∞ ×
falls halfway to its minimum value
RBM Minimum base resistance at high Ω RB ÷
currents
RE Emitter resistance Ω 0 ÷
RC Collector resistance Ω 0 ÷
CJE B-E zero-bias depletion F 0 ×
capacitance
VJE B-E built in potential V 0.75
MJE B-E junction exponential factor 0.33
TF Ideal forward transit time Sec. 0
XTF Coefficient for bias dependence of 0
TF
VTF Voltage describing VBC V ∞
dependence of TF
ITF High-current parameter for effect A 0 ×
on TF
PTF Excess phase at freq=1.0/(TF×2π) degree 0
Hz
CJC B-C zero-bias depletion F 0 ×
capacitance
VJC B-C built-in potential V 0.75
MJC B-C junction exponential factor 0.33
XCJC Fraction of B-C depletion 1
capacitance connected to internal
base node
TR Ideal reverse transit time Sec. 0
ISS Substrate diode saturation current A 0 ×
NS Substrate diode emission 1
coefficient

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Chapter 4 Analog Device Reference

Name Description Units Default Area

CJS Zero-bias collector substrate F 0 ×


capacitance
VJS Substrate junction built-in potential V 0.75
MJS Substrate junction exponential 0
factor
XTB Forward and reverse beta 0
temperature exponent
EG Energy gap eV 1.11
XTI Temperature exponent for effect on 3
IS
KF Flicker noise coefficient 0
AF Flicker noise exponent 1
FC Coefficient for forward-bias 0.5
depletion capacitance formula
QCO Epitaxial region charge factor coulomb 0.0 ×
QUASIMOD Quasi saturation temperature flag: 0
QUASIMOD=0: no temperature
depenedence
QUASIMOD=1: temperature
dependence enabled
RCO Epitaxial region resistance. Set to 0.0 ÷
non-zero to enable quasi saturation
model
GAMMA Epitaxial region doping factor 1e-11
VG Quasi saturation extrapolated V 1.206
bandgap voltage at 0K
D Quasi saturation temp coeff for NPN:
scattering limited hole carrier 0.87
velocity PNP
:0.52
CN Quasi saturation temp coeff for hole NPN:
mobility 2.42
PNP:
2.20

Notes
The bipolar junction transistor model in SPICE is an adaptation of the integral charge
control model of Gummel and Poon.

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Simulator Reference Manual

This modified Gummel-Poon model extends the original model to include several
effects at high bias levels. The model will automatically simplify to the simpler Ebers-
Moll model when certain parameters are not specified.

The dc model is defined by the parameters IS, BF, NF, ISE, IKF, and NE which
determine the forward current gain characteristics, IS, BR, NR, ISC, IKR, and NC
which determine the reverse current gain characteristics, and VAF and VAR which
determine the output conductance for forward and reverse regions. Three ohmic
resistances RB, RC, and RE are included, where RB can be high current dependent.
Base charge storage is modelled by forward and reverse transit times, TF and TR, the
forward transit time TF being bias dependent if desired, and non-linear depletion layer
capacitances which are determined by CJE, VJE, and MJE for the B-E junction, CJC,
VJC, and MJC for the B-C junction and CJS, VJS, and MJS for the C-S (Collector-
Substrate) junction. The temperature dependence of the saturation current, IS, is
determined by the energy-gap, EG, and the saturation current temperature exponent,
XTI. Additionally base current temperature dependence is modelled by the beta
temperature exponent XTB in the new model.

This implementation includes further enhancements to model quasi-saturation effects.


This is governed by the model parameters RCO, QCO, GAMMA and for temperature
dependence, QUASIMOD, VG, D and CN. The quasi-saturation model is compatible
with PSpice. Hspice models may be accommodated by setting RC to zero and RCO to
the value of RC in the Hspice model.

References

The Quasi-saturation model was developed from the following paper:

George M. Kull, Laurence W. Nagel, Shiuh-Wuu Lee, Peter Lloyd, E. James


Prendergast and Heinz Dirks, “A Unified Circuit Model fo Bipolar Transistors
Including Quasi-Saturation Effects”, . IEEE Transactions on Electron Devices, Vol.
ED-32, No 6 June 1985, pages 1103-1113

Bipolar Junction Transistor (VBIC without self heating)


Netlist Entry

Qxxxx collector base emitter [substrate] modelname [M=multiplier]


[AREA|SCALE=area]
collector Collector node name
base Base node name
emitter Emitter node name
substrate Substrate node name
modelname Name of model. Must begin with a letter but can contain any
character except whitespace and ' . ' .
multiplier Device scale. Has an identical effect as putting multiplier
devices in parallel.
area Scales certain model parameters as described in the parameter

60
Chapter 4 Analog Device Reference

table under Area column. A × entry means the parameter is


multiplied by the area while a ÷ means the parameter is divided
by the area.

Model Syntax

.MODEL modelname NPN|PNP LEVEL=4 parameters

Model Parameters

Name Description Units Default Area

TNOM/ Nominal ambient temperature Celsius 27


TREF
RCX Extrinsic collector resistance Ohms 0.0 ÷
RCI Intrinsic collector resistance Ohms 0.0 ÷
VO Epi drift saturation voltage 0.0
GAMM Epi doping parameter 0.0
HRCF High-current RC factor 1.0
RBX Extrinsic base resistance 0.0 ÷
RBI Intrinsic base resistance 0.0 ÷
RE Emitter resistance 0.0 ÷
RS Substrate resistance 0.0 ÷
RBP Parasitic base resistance 0.0 ÷
IS Transport saturation current 1.0E-16 ×
NF Forward emission coefficient 1.0
NR Reverse emission coefficient 1.0
FC Forward bias junction capacitance 0.9
threshold
CBEO/ Base-emitter small signal capacitance 0.0 ×
CBE0
CJE Base-emitter zero-bias junction 0.0 ×
capacitance
PE Base-emitter grading coefficient 0.75
ME Base-emitter junction exponent 0.33
AJE Base-emitter capacitance smoothing -0.5
factor
CBCO/ Extrinsic base-collector overlap 0.0 ×
CBC0 capacitance

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Simulator Reference Manual

Name Description Units Default Area

CJC Base-collector zero-bias capacitance 0.0 ×


QCO/ Collector charge at zero bias 0.0 ×
QC0
CJEP Base-emitter extrinsic zero-bias 0.0 ×
capacitance
PC Base-collector grading coefficient 0.75
MC Base-collector junction exponent 0.33
AJC Base-collector capacitance smoothing -0.5
factor
CJCP Base-collector zero-bias extrinsic 0.0 ×
capacitance
PS Collector-substrate grading coefficient 0.75
MS Collector-substrate junction exponent 0.33
AJS Collector-substrate capacitance -0.5
smoothing factor
IBEI Ideal base-emitter saturation current 1E-18 ×
WBE Portion of IBEI from Vbei, (1-WBE) from 1.0
Vbex
NEI Ideal base-emitter emission coefficient 1.0
IBEN Non-ideal base-emitter saturation 0.0 ×
current
NEN Non-ideal base-emitter emission 2.0
coefficient
IBCI Ideal base-collector saturation current 1.0E-16 ×
NCI Ideal base-collector emission 1.0
coefficient
IBCN Non-ideal base-collector saturation 0.0 ×
current
NCN Non-ideal base- collector emission 2.0
coefficient
AVC1 Base-collector weak avalanche 0.0
parameter 1
AVC2 Base-collector weak avalanche 0.0
parameter 2
ISP Parasitic transport saturation current 0.0 ×
WSP Portion of Iccp from Vbep, (1-WSP) 1.0
from Vbci
NFP Parasitic forward emission coefficient 1.0

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Chapter 4 Analog Device Reference

Name Description Units Default Area

IBEIP Ideal parasitic base-emitter saturation 0.0 ×


current
IBENP Non-ideal parasitic base-emitter 0.0 ×
saturation current
IBCIP Ideal parasitic base-collector saturation 0.0 ×
current
NCIP Ideal parasitic base-collector emission 1.0
coefficient
IBCNP Non-ideal parasitic base-collector 0.0 ×
saturation current
NCNP Non-ideal parasitic base-collector 2.0
emission coefficient
VEF Forward Early voltage (0=infinity) 0.0
VER Reverse Early voltage (0=infinity) 0.0
IKF Forward knee current, (0=inifinity) 0.0 ×
IKR Reverse knee current, (0=infinity) 0.0 ×
IKP Parasitic knee current (0=infinity) 0.0 ×
TF Forward transit time 0.0
QTF Variation of TF with base width 0.0
modulation
XTF Coefficient of TF bias dependence 0.0
VTF Coefficient of TF dependence on Vbc 0.0
ITF Coefficient of TF dependence of Icc 0.0
TR Ideal reverse transit time 0.0
TD Forward excess phase delay time 0.0
KFN Flicker noise coefficient 0.0
AFN Flicker noise exponent 1.0
BFN Flicker noise frequency exponent 1.0
XRE Temperature exponent of emitter 0.0
resistance
XRB Temperature exponent of base 0.0
resistance
XRC Temperature exponent of collector 0.0
resistance
XRS Temperature exponent of substrate 0.0
resistance

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Simulator Reference Manual

Name Description Units Default Area

XV0/ Temperature exponent of Vo 0.0


XV0
EA Activation energy for IS 1.12
EAIE Activation energy for IBEI 1.12
EAIC Activation energy for IBCI/IBEIP 1.12
EAIS Activation energy for IBCIP 1.12
EANE Activation energy for IBEN 1.12
EANC Activation energy for IBCN/IBENP 1.12
EANS Activation energy for IBCNP 1.12
XIS Temperature exponent of Is 3.0
XII Temperature exponent of IBEI/IBCI/ 3.0
IBEIP/IBCIP
XIN Temperature exponent of IBEN/IBCN/ 3.0
IBENP/IBCNP
TNF Temperature coefficient of NF 0.0
TAVC Temperature coefficient of AVC 0.0

Notes
The VBIC model is only available with Micron versions.

The Vertical Bipolar Inter-Company (VBIC) model is an advanced bipolar junction


transistor model. This is the 4-terminal non-thermal version. There is also a version
that supports self-heating effects and has 5 terminals, see “Bipolar Junction Transistor
(VBIC with self heating)” below.

For more information about VBIC, please refer to this link:

[Link]

Bipolar Junction Transistor (VBIC with self heating)


Netlist Entry

Qxxxx collector base emitter substrate thermal_node modelname


[M=multiplier] [AREA|SCALE=area]
collector Collector node name
base Base node name
emitter Emitter node name
substrate Substrate node name
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Chapter 4 Analog Device Reference

thermal_node See notes


modelname Name of model. Must begin with a letter but can contain any
character except whitespace and ' . ' .
multiplier Device scale. Has an identical effect as putting multiplier
devices in parallel.
area Scales certain model parameters as described in the parameter
table under Area column. A × entry means the parameter is
multiplied by the area while a ÷ means the parameter is divided
by the area.

Model Syntax

.MODEL modelname NPN|PNP LEVEL=1004 parameters

Model Parameters

Model parameters are identical to the non-thermal version except for the addition of
the following:

Name Description Units Default Area

RTH Thermal resistance 0.0 ÷


CTH Thermal capacitance 0.0 ×

Notes
The VBIC model is only available with Micron versions.

This model is the same as the VBIC non-thermal model except for the addition of self-
heating effects. Use the non-thermal version if you do not need self-heating as its
implementation is simpler and will run faster.

The thermal_node may be used to connect external thermal networks to model thermal
flow. Power in watts is represented by current and temperature rise in Kelvin is
represented by the voltage. Note that the voltage is temperature rise above the
simulation temperature, not an absolute value.

Bipolar Junction Transistor (MEXTRAM)


See “Philips Compact Models” on page 123

Bipolar Junction Transistor (HICUM)


Netlist Entry

Qxxxx collector base emitter [substrate] modelname

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Simulator Reference Manual

Where:
collector Collector node
base Base node
emitter Emitter node
substrate Substrate node
modelname Model name as used with .MODEL statement

NPN Model Syntax

.MODEL modelname NPN LEVEL=8 parameters


OR
.MODEL modelname HICUM_211 PNP=0 parameters

PNP Model Syntax

.MODEL modelname PNP LEVEL=8 parameters


OR
.MODEL modelname HICUM_211 PNP=1 parameters

Notes

The model provided is “Level 2 version 2.11”.

The model was implemented from Verilog-A code. It has received only minor changes
from the original supplied by the developers. These changes are to implement PNP
devices and to overcome a problem in the original model whereby it is possible for it to
converge to an erroneous state.

The SIMetrix implementation of this model has been tested using the benchmark
results provided by the developers. The majority of the tests showed a match of better
than 0.1%. A few were over 1% with one deviating by 7%. These were investigated
and it was found that the reference data was in error probably because of insufficient
convergence tolerance.

Capacitor
Netlist Entry

Cxxxx n1 n2 [model_name] value [IC=initial_condition]


[TEMP=local_temp] [TC1=tc1] [TC2=tc2] [VC1=vc1] [VC2=vc2]
[BRANCH=0|1] [M=mult] [DTEMP=dtemp]

n1 Node 1
n2 Node 2
model_name (Optional) Name of model . Must begin with a letter but can

66
Chapter 4 Analog Device Reference

contain any character except whitespace and period '.'


value Capacitance (Farads)
initial_condition Initial voltage if UIC specified on .TRAN control (page 241).
local_temp Capacitor temperature (°C)
tc1 First order temperature coefficient
tc2 Second order temperature coefficient
vc1 First order voltage coefficient
vc2 Second order voltage coefficient
BRANCH May be 0 or 1. 0 is the default. This parameter determines the
internal formulation of the capacitor and affects how the IC
parameter is implemented. When BRANCH=0, the capacitor
looks like an open circuit during the DC operating point and the
IC parameter has no effect unless UIC is specified for a transient
analysis. If BRANCH=1, the capacitor looks like a voltage
source during dc operating point with a magnitude equal to the
value of the IC parameter. BRANCH=1 makes it possible to
specify circuit startup conditions. See “Alternative Initial
Condition Implementations” on page 203 for an example.
mult Device multiplier. Equivalent to putting mult devices in parallel.
dtemp Differential temperature. Similar to local_temp but is specified
relative to circuit temperature. If both TEMP and DTEMP are
specified, TEMP takes precedence.

Capacitor Model Syntax

.model modelname CAP ( parameters )

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Simulator Reference Manual

Capacitor Model Parameters

Name Description Units Default

C Capacitor multiplier 1
TC1 First order temperature coefficient 1/°C 0
TC2 Second order temperature coefficient 1/°C2 0

VC1 First order voltage coefficient Volt-1 0

VC2 Second order voltage coefficient Volt-2 0

Capacitor with Voltage Initial Condition


Netlist entry:

Axxxx cap_p cap_n model_name

Model format:

.MODEL model_name cm_cap parameters

Model parameters:

Name Description Type Default Limits

c Capacitance real none 1E-21 - ∞


ic Voltage initial condition real 0 none

Description
This device is now obsolete. Use a standard capacitor with BRANCH=1.

This is like a standard capacitor but the internal implementation is different and
permits the specification of an initial condition which works without having to specify
the transient UIC switch. Also, unlike normal initial conditions, the initial voltage is
applied with a zero source resistance.

In some circumstances, large value capacitors are better implemented using this device
than the standard capacitor but note that during the DC operating point solution, the
device looks like a short circuit, not an open circuit as is the case with the normal
SPICE device.

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Chapter 4 Analog Device Reference

Current Controlled Current Source


Netlist Entry: Linear Source

Fxxxx nout+ nout- vc current_gain

nout+ Positive output node


nout- Negative output node
vc Controlling voltage source
current_gain Output current/Input current
SPICE2 polynomial sources are also supported in order to maintain compatibility with
commercially available libraries for IC's. (Most operational amplifier models for
example use several polynomial sources). In general, however the arbitrary source
(page 52) is more flexible and easier to use.

Netlist Entry: Polynomial Source

Fxxxx nout+ nout- POLY( num_inputs ) vc1 vc2 ...


+ polynomial_specification

vc1, vc2 Controlling voltage sources


num_inputs Number of controlling currents for source.
polynomial_specification See “Polynomial Specification” on page 70
The specification of the controlling voltage source or source requires additional netlist
lines. The schematic netlister automatically generates these for the four terminal device
supplied in the symbol library.

Example
R2
1K

0.1

R1
1K
F1

In the above circuit, the current in the output of F1 (flowing from top to bottom) will
be 0.1 times the current in R2.

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Simulator Reference Manual

Polynomial Specification
The following is an extract from the SPICE2G.6 user manual explaining polynomial
sources.

SPICE allows circuits to contain dependent sources characterised by any of the four
equations

i=f(v)
v=f(v)
i=f(i)
v=f(i)

where the functions must be polynomials, and the arguments may be


multidimensional. The polynomial functions are specified by a set of coefficients p0,
p1, ..., pn. Both the number of dimensions and the number of coefficients are arbitrary.
The meaning of the coefficients depends upon the dimension of the polynomial, as
shown in the following examples:

Suppose that the function is one-dimensional (that is, a function of one argument).
Then the function value fv is determined by the following expression in fa (the function
argument):

fv = p0 + ([Link]) + (p2.fa2) + (p3.fa3) + (p4.fa4) + (p5.fa5) + ...

Suppose now that the function is two-dimensional, with arguments fa and fb. Then the
function value fv is determined by the following expression:

fv = p0 + ([Link]) + ([Link]) + (p3.fa2) + ([Link]) + (p5.fb2) + (p6.fa3) + ([Link]) +


([Link].fb2) + (p9.fb3) + ...

Consider now the case of a three-dimensional polynomial function with arguments fa,
fb, and fc. Then the function value fv is determined by the following expression:

fv = p0 + ([Link]) + ([Link]) + ([Link]) + (p4.fa2) + ([Link]) + ([Link]) + (p7.fb2) +


([Link]) + (p9.fc2) + (p10.fa3) + ([Link]) + ([Link]) + ([Link].fb2) +
([Link]) + ([Link].fc2) + (p16.fb3) + ([Link]) + ([Link].fc2) + (p19.fc3) +
(p20.fa4) + ...

Note If the polynomial is one-dimensional and exactly one coefficient is


specified, then SPICE assumes it to be p1 (and p0 = 0.0), in order to
facilitate the input of linear controlled sources.

Current Controlled Voltage Source


Netlist Entry: Linear Source

Hxxxx nout+ nout- vc transresistance

nout+ Positive output node

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Chapter 4 Analog Device Reference

nout- Negative output node


vc Controlling voltage source
transresistance Output current/Input current (Ω)
SPICE2 polynomial sources are also supported in order to maintain compatibility with
commercially available libraries for IC's. (Most Op-amp models use several
polynomial sources). In general, however the arbitrary source is more flexible and
easier to use.

Netlist Entry: Polynomial Source

Hxxxx nout+ nout- POLY( num_inputs ) vc1 vc2 ...


+ polynomial_specification

vc1, vc2 Controlling voltage sources


num_inputs Number of controlling currents for source.
polynomial_specification See “Polynomial Specification” on page 70.
The specification of the controlling voltage source or source requires additional netlist
lines. The schematic netlister automatically generates these for the four terminal device
supplied in the symbol library.

Current Source
Netlist Entry

Ixxxx n+ n- [DC dcvalue] [AC magnitude [phase]] [transient_spec]

n+ Positive node
n- Negative node
dcvalue Value of source for dc operating point analysis
magnitude AC magnitude for AC sweep analysis.
phase phase for AC sweep analysis
transient_spec Specification for time varying source. Can be one of following:
Pulse - see page 115
Piece wise linear - see page 116
Sine - see page 118
Exponential - see page 119
Single frequency FM - see page 120

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Simulator Reference Manual

Diode - Level 1 and Level 3


Netlist Entry

Dxxxx n+ n- model_name [area] [OFF] [IC=vd] [TEMP=local_temp]


+ [M=mult] [PJ=periphery] [L=length] [W=width] [M=mult]
[DTEMP=dtemp]

n+ Anode
n- Cathode
model_name Name of model defined in a .MODEL control (page 207). Must
begin with a letter but can contain any character except
whitespace and ' . ' .
area Area multiplying factor. Area scales up the device. E.g. an area
of 3 would make the device behave like 3 diodes in parallel.
Default is 1.
OFF Instructs simulator to calculate operating point analysis with
device initially off. This is used in latching circuits such as
thyristors and bistables to induce a particular state. See “.OP” on
page 214 for more details.
vd Initial condition for diode voltage. This only has an effect if the
UIC parameter is specified on the .TRAN control (page 241).
local_temp Local temperature. Overrides specification in .OPTIONS
(page 215) or .TEMP (page 238) controls.
mult Level 3 only. Similar to area. See below.
periphery Level 3 only. Junction periphery used for calculating sidewall
effects.
length Level 3 only. Used to calculate area. See below.
width Level 3 only. Used to calculate area. See below.
mult Device multiplier. Equivalent to putting mult devices in parallel.
dtemp Differential temperature. Similar to local_temp but is specified
relative to circuit temperature. If both TEMP and DTEMP are
specified, TEMP takes precedence.

Examples

D1 D2 D3
D1N4148 5 BYT12 D1N914 TEMP=100

72
Chapter 4 Analog Device Reference

Diode Model Syntax

.model modelname D ( LEVEL=[1|3] parameters )

Diode Model Parameters - Level = 1

The symbols ' × ' and ' ÷ ' in the Area column means that the specified parameter
should be multiplied or divided by the area factor respectively.

Name Description Units Default Area

IS Transport saturation current A 1e-14 ×


ISR Recombination current parameter A 0 ×
N Emission coefficient 1
NR Emission Coefficient for ISR 2
IKF High injection knee current A ∞ ×
RS Series resistance Ω 0 ÷
TT Transit time sec 0
CJO or Zero bias junction capacitance F 0 ×
CJ0
VJ Junction potential V 1
M Grading coefficient 0.5
EG Energy gap eV 1.11
XTI Saturation current temperature 3
exponent
KF Flicker noise coefficient 0
AF Flicker noise exponent 1
FC Forward bias depletion capacitance 0.5
coefficient
BV Reverse breakdown voltage V ∞
IBV Current at breakdown voltage A 1e-10 ×
TNOM Parameter measurement °C 27
temperature
TRS1 First order tempco RS /°C 0
TRS2 Second order tempco RS /°C 2
0
TBV1 First order tempco BV /°C
TBV2 Second order tempco BV /°C2

Notes The dc characteristics of the diode are determined by the parameters IS, N,
ISR, NR and IKF. An ohmic resistance, RS, is included. Charge storage

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Simulator Reference Manual

effects are modelled by a transit time, TT, and a non-linear depletion layer
capacitance which is determined by the parameters CJO, VJ, and M. The
temperature dependence of the saturation current is defined by the
parameters EG, the energy and XTI, the saturation current temperature
exponent. Reverse breakdown is modelled by an exponential increase in the
reverse diode current and is determined by the parameters BV and IBV
(both of which are positive numbers).

Diode Model Parameters - Level = 3

Name Description Units Default

AF Flicker noise exponent 1.0


BV Reverse breakdown voltage V ∞
CJO, CJ Zero bias junction capacitance F 0.0
CJSW Zero bias sidewall capacitance F 0.0
CTA CJO temp coefficient. (TLEVC=1) °C -1

CTP CJSW temp coefficient. (TLEVC=1) °C-1


EG Energy gap ev 1.11
FC Forward bias depletion capacitance 0.5
coefficient
FCS Forward bias sidewall capacitance 0.5
coefficient
GAP1 7.02e-4 - silicon (old value) eV/° 7.02e-4
4.73e-4 - silicon
4.56e-4 - germanium
5.41e-4 - gallium arsenide
GAP2 1108 - silicon (old value) ° 1108
636 - silicon
210 - germanium
204 - gallium arsenide
IBV Current at breakdown voltage A 1E-3
IKF, IK High injection knee current A •
IKR Reverse high injection knee current A •
IS, JS Saturation current A 1E-14
ISR Recombination current A 0
JSW Sidewall saturation current A 0
KF Flicker noise exponent 0
MJ, M Grading coefficient 0.5
MJSW Sidewall grading coefficient 0.33

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Chapter 4 Analog Device Reference

Name Description Units Default

N, NF Forward emission coefficient 1.0


NR Recombination emission coefficient 2.0
PHP Sidewall built in potential PB
RS Series resistance Ω 0
SHRINK Shrink factor 1.0
TCV BV temp coefficient °C-1 0
TLEV Temperature model selector. Valid 0
values: 0, 1, 2
TLEVC Temperature model selector. Valid 0
values: 0 or 1
TNOM, TREF Parameter measurement temperature 27
TPB VJ temp coefficient (TLEVC=1) V/°C 0.0
TPHP PHP temp. coefficient (TLEVC=1) V/°C 0.0
TRS RS temp. coefficient °C -1
0.0
TT Transit time S 0.0
VJ, PB Built-in potential V 0.8
XW Shrink factor 0.0

The parameters CJSW and JSW are scaled by the instance parameter PJ whose default
value is 0.0.

If L and W instance parameters are supplied, the diode is scaled by the factor:
M*(L*SHRINK-XW)*(W*SHRINK-XW)
otherwise it is scaled by M*AREA.

M and AREA are instance parameters which default to 1.0

Diode - Soft Recovery


Netlist Entry

Dxxxx n+ n- model_name [TEMP=local_temp]

n+ Anode
n- Cathode
model_name Name of model defined in a .MODEL control (page 207). Must
begin with a letter but can contain any character except
whitespace and ' . ' .
local_temp Local temperature. Overrides specification in .OPTIONS
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Simulator Reference Manual

(page 215) or .TEMP (page 238) controls.

Diode Model Syntax

.model modelname SRDIO ( parameters )

Soft Recovery Diode Model Parameters

Name Description Units Default

CJO Zero bias junction capacitance F 0.0


EG Energy gap ev 1.11
FC Forward bias depletion capacitance 0.5
coefficient
IS Saturation current A 1E-15
MJ Grading coefficient 0.5
N Forward emission coefficient 1.0
RS Series resistance Ω 0
TNOM Parameter measurement temperature 27
TT Diffusion transit time S 5e-6
TAU Minority carrier lifetime 1e-5
VJ Built-in potential V 1
XTI Saturation current temperature 3
exponent

Basic Equations
The model is based on the paper “A Simple Diode Model with Reverse Recovery” by
Peter Lauritzen and Cliff Ma. (See references). The model’s governing equations are
quite simple and are as follows:

qe – qm
i d = ------------------
TT
dq m qm ( qe – qm )
+ ------------- – ----------------------- = 0
dt TAU TT
vd
q e = IS ⋅ TAU ⋅  exp  -------------- – 1
N ⋅ Vt

In addition the model uses the standard SPICE equations for junction capacitance and
temperature dependence of IS.

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Chapter 4 Analog Device Reference

References
Peter O. Lauritzen, Cliff L. Ma, A Simple Diode Model with Reverse Recovery, IEEE
Transactions on Power Electronics, Vol. 6, No 2, pp 188-191, April 1991.

GaAsFET
Netlist Entry

Zxxxx drain gate source modelname [area] [OFF] [IC=vds , vgs]

drain Drain node


gate Gate node
source Source node
modelname Name of model defined in a .model control. Must begin with a
letter but can contain any character except whitespace and
period '.' .
area Area multiplying factor. Area scales up the device. E.g. an area
of 3 would make the device behave like 3 transistors in parallel.
Default is one.
OFF Instructs simulator to calculate operating point analysis with
device initially off. This is used in latching circuits such as
thyristors and bistables to induce a particular state. See “.OP” on
page 214 for more details.
vds,vgs Initial conditions for drain-source and gate-source junctions
respectively. These only have an effect if the UIC parameter is
specified on the .TRAN control.

GaAsFET Model Syntax

.model modelname NMF ( parameters )

GaAsFET Model Parameters

The symbols ' × ' and ' ÷ ' in the Area column means that parameter should be
multiplied or divided by the area factor respectively.

Name Description Units Default Area

VTO Pinch-off Voltage V -2.0


BETA Transconductance parameter A/V 2 2.5e-3 ×

B Doping tail extending parameter 1/V 0.3


ALPHA Saturation voltage parameter 1/V 2

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Simulator Reference Manual

Name Description Units Default Area

LAMBD Channel length modulation 1/V 0


A parameter
RD Drain ohmic resistance Ω 0 ÷
RS Source ohmic resistance Ω 0 ÷
CGS Zero bias gate source capacitance F 0 ×
CGD Zero bias gate drain capacitance F 0 ×
PB Gate junction potential V 1
IS Gate p-n saturation current A 1e-14 ×
FC Forward bias depletion capacitance 0.5
coefficient
KF Flicker noise coefficient 0
AF Flicker noise exponent 1

Notes The GaAsFET model is derived from the model developed by Statz. The
DC characteristics are defined by parameters VTO, B and BETA, which
determine the variation of drain current with gate voltage, ALPHA, which
determines saturation voltage, and LAMBDA, which determines the output
conductance. IS determines the gate-source and gate-drain dc
characteristics.

Two ohmic resistances are included. Charge storage is modelled by total


gate charge as a function of gate-drain and gate-source voltages and is
defined by the parameters CGS, CGD and PB.

Inductor (Ideal)
Netlist Entry

Lxxxx n1 n2 value [IC=init_cond] [BRANCH=0|1]

n1 Node 1
n2 Node 2
value Value in henries
init_cond Initial current in inductor. Only effective if UIC option is
specified on .TRAN control.
BRANCH set to 0 or 1. 1 is default value. This parameter determines the
internal formulation of the inductor and affects how the IC
parameter is implemented. When BRANCH=1, the inductor
looks like a short circuit during DC operating point and the IC
parameter has no effect unless UIC is specified for a transient
analysis. If BRANCH=0, the inductor looks like a current

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Chapter 4 Analog Device Reference

source during dc operating point with a magnitude equal to the


value of the IC parameter. BRANCH=0 makes it possible to
specify circuit startup conditions.

See Also

Mutual Inductance page 122

Inductor (Saturable)
Netlist Entry

Lxxxx n1 n2 modelname [N=num_turns] [LE=le] [AE=ae] [UE=ue]

n1 Node 1
n2 Node 2
modelname Model name referring to a .MODEL control describing the core
characteristics. See details below.
num_turns Number of turns on winding
le Effective path length of core in metres. Default = PATH/100.
PATH is defined in .MODEL.

ae Effective area of core in metres2. Default = AREA/10000 where


AREA is define in .MODEL.
ue Effective permeability of core. Overrides model parameter of
the same name.

Model format - Jiles-Atherton model with hysteresis

.MODEL model_name CORE parameters

Model format - simple model without hysteresis

.MODEL model_name CORENH parameters

Jiles-Atherton Parameters

Name Description Units Default

PATH Effective path length cm 1


C Domain flexing parameter 0.2
K Domain anisotropy parameter amp.m -1 500

MS Magnetisation saturation 1E6

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Simulator Reference Manual

Name Description Units Default

GAP Air gap (centimetres) cm 0


GAPM Air gap (metres) m GAP/100
A Thermal energy parameter amp.m- 1000

AREA Effective area cm2 0.1

UE Effective permeability. Overrides GAP and


GAPM if >0. See notes
AHMODE Anhysteric function selector (see notes) 0

Non-hysteresis Model Parameters

Name Description Units Default

PATH Effective path length cm 1


MS Magnetisation saturation 1E6
GAP Air gap (centimetres) cm 0
GAPM Air gap (metres) m GAP/100
A Thermal energy parameter amp.m - 1000

AREA Effective area cm2 0.1

AHMODE Anhysteric function selector (see notes) 0

Notes on the Jiles-Atherton model


The Jiles-Atherton model is based on the theory developed by D.C. Jiles and
[Link] in their 1986 paper “Theory of Ferromagnetic Hysteresis”. The model
has been modified to correct non-physical behaviour observed at the loop tips whereby
the slope of the B-H curve reverses. This leads to non-convergence in the simulator.
The modification made is that proposed by Lederer et al. (See references below). Full
details of the SIMetrix implementation of this model including all the equations are
provided in a technical note. This is located on the install CD at Docs/Magnetics/Jiles-
[Link].

The AHMODE parameter selects the equation used for the anhysteric function, that is
the non-linear curve describing the saturating behaviour. When set to 0 the function is
the same as that used by PSpice. When set to 1 the function is the original equation
proposed by Jiles and Atherton. See the [Link] technical note for
details.

If the UE parameters is specified either on the device line or in the model, an air gap
value is calculated and the parameters GAP and GAPM are ignored. See the Jiles-
[Link] technical note for the formula used.

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Chapter 4 Analog Device Reference

The parameter names and their default values for the Jiles-Atherton model are
compatible with PSpice, but the netlist entry is different.

Notes on the non-hysteresis model


This is simply a reduced version of the Jiles-Atherton model with the hysteresis effects
removed. The anhysteric function and the air-gap model are the same as the Jiles-
Atherton model.

Implementing Transformers
This model describes only a 2 terminal inductor. A transformer can be created using a
combination of controlled sources along with a single inductor. The SIMetrix
schematic editor uses this method.

The schematic editor provides a means of creating transformers and this uses an
arrangement of controlled sources to fabricate a non-inductive transformer. Any
inductor can be added to this arrangement to create an inductive transformer. The
method is simple and efficient. The following shows how a non-inductive three
winding transformer can be created from simple controlled sources:

F1 0 n1 E1 1
E1 W1A W1B n1 0 1
F2 0 n1 E2 1
E2 W2A W2B n1 0 1
F3 0 n1 E3 1
E3 W3A W3B n1 0 1

Connecting an inductor between n1 and 0 in the above provides the inductive


behaviour. This is in fact how the SIMetrix schematic editor creates non-linear
transformers.

Note that you cannot use the mutual inductor device with the saturable inductor.

Plotting B-H curves


Both models can be enabled to output values for flux density in Tesla and magnetising
force in A.m-1. To do this, add the following line to the netlist:

.KEEP Lxxx#B Lxxx#H

Replace Lxxx with the reference for the inductor. (e.g. L23 etc.). You will find vectors
with the names Lxxx#B Lxxx#H available for plotting in the waveform viewer.

References
1. Theory of Ferromagnetic Hysteresis, [Link], D.L. Atherton, Journal of
Magnetism and Magnetic Materials, 1986 p48-60.
2. On the Parameter Identification and Application of the Jiles-Atherton Hysteresis
Model for Numerical Modelling of Measured Characteristics, D Lederer, H
Igarashi, A Kost and T Honma, IEEE Transactions on Magnetics, Vol. 35, No. 3,
May 1999

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Simulator Reference Manual

Inductor with Current Initial Condition


Netlist entry

Axxxx ind_p ind_n model_name

Model format

.MODEL model_name cm_ind parameters

Model parameters

Name Description Type Default Limits

l Inductance real none 1e-18 - ∞


ic Current initial condition real 0 none

Description

This device is now obsolete. Use standard inductor with BRANCH=0.

This is like a standard inductor but the internal implementation is different and permits
the specification of a current initial condition which works without having to specify
the transient UIC switch.

In some circumstances, large value inductors are better implemented using this device
than the standard inductor but note that during the DC operating point solution, the
device looks like an open circuit, not a short circuit as is the case with the normal
SPICE device.

Note that this type of inductor cannot be coupled using the 'K' device.

Insulated Gate Bipolar Transistor


Netlist Entry

Zxxxx collector gate emitter [AREA=area] [AGD=agd] [KP=kp]


[TAU=tau] [WB=wb]

collector Collector node


gate Gate node
emitter Emitter node

area Device area in m2 (overrides model parameter of the same


name)

agd Gate-drain overlap area in m2 (overrides model parameter of the

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Chapter 4 Analog Device Reference

same name)
kp Transconductance (overrides model parameter of the same
name)
tau Ambipolar recombination lifetime (overrides model parameter
of the same name)
wb Base width in metres (overrides model parameter of the same
name)

Model syntax

.MODEL model_name NIGBT parameters

Name Description Units Default

AGD Gate-drain overlap area m2 5E-6

AREA Device active area m2 1E-5

BVF Breakdown voltage nonplanar junction factor 1.0


BVN Avalanche multiplication exponent 4.0
CGS Gate-source capacitance per unit area Fcm-2 1.24E-8

COXD Gate-drain overlap oxide capacitance per unit Fcm-2 3.5E-8


area
JSNE Emitter electron saturation current density Acm-2 6.5E-13

KF Triode region MOSFET transconductance 1.0


factor
KP MOSFET transconductance factor AV-2 0.38

MUN Electron mobility cm (Vs) -2 -1 1.5E3

MUP Hole mobility cm-2(Vs)-1 4.5E2

NB Base doping concentration cm -3 2E14

TAU Ambipolar recombination lifetime s 7.1E-6


THETA Transverse field transconductance factor V -1 0.02

VT MOSFET channel threshold voltage V 4.7


VTD Gate-drain overlap depletion threshold V 1E-3
WB Metallurgical base width m 9.0E-5

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Simulator Reference Manual

Notes

The IGBT model is based on the model developed by Allen R. Hefner at the National
Institute of Standards and Technology. The parameter names, default values and units
have been chosen to be compatible with the PSpice implementation of the same model.

For more information, please refer to:

Modelling Buffer Layer IGBT’s for Circuit Simulation, Allen R. Hefner Jr, IEEE
Transactions on Power Electronics, Vol. 10, No. 2, March 1995

An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator,


Allen R. Hefner, Jr., Daniel M. Diebolt, IEE Transactions on Power Electronics, Vol. 9,
No. 5, September 1994

Junction FET
Netlist Entry

Jxxxx drain gate source modelname [area] [OFF] [IC=vds,vgs]


+ [TEMP=local_temp] [M=mult] [DTEMP=dtemp]

drain Drain node


gate Gate node
source Source node
modelname Name of model defined in a .model control. Must begin with a
letter but can contain any character except whitespace and
period '.' .
area Area multiplying factor. Area scales up the device. E.g. an area
of 3 would make the device behave like 3 transistors in parallel.
Default is 1.
OFF Instructs simulator to calculate operating point analysis with
device initially off. This is used in latching circuits such as
thyristors and bistables to induce a particular state. See “.OP” on
page 214 for more details.
vds,vgs Initial conditions for drain-source and gate-source junctions
respectively. These only have an effect if the UIC parameter is
specified on the .TRAN control (page 241).
local_temp Local temperature. Overrides specification in .OPTIONS
(page 215) or .TEMP (page 238) controls.
mult Device multiplier. Equivalent to putting mult devices in parallel.
dtemp Differential temperature. Similar to local_temp but is specified
relative to circuit temperature. If both TEMP and DTEMP are
specified, TEMP takes precedence.

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Chapter 4 Analog Device Reference

N Channel JFET: Model Syntax

.model modelname NJF ( parameters )

P Channel JFET: Model Syntax

.model modelname PJF ( parameters )

JFET: Model Parameters

The symbols ' × ' and ' ÷ ' in the Area column means that parameter should be
multiplied or divided by the area factor respectively.

Name Description Units Default Area

VTO Threshold voltage V -2.0


VTOTC VTO temp coefficient V/°C 0
BETA Transconductance parameter A/V 2 1e-4 ×

BETATC BETA temperature coefficient % 0


E
LAMDA Channel length modulation 1/V 0
parameter
ALPHA Impact ionisation coefficient 0
VK Impact ionisation knee voltage V 0
RS Source ohmic resistance Ω 0 ÷
CGS Zero-bias G-S junction capacitance F 0 ÷
CGD Zero-bias G-D junction capacitance F 0 ÷
M Grading coefficient 1.0
PB Gate junction potential V 1
IS Gate junction saturation current A 1e-14 ×
N Gate junction emission coefficient 1
ISR Recombination current 0
NR ISR emission coefficient
XTI IS temperature coefficient 3
KF Flicker noise coefficient 0
AF Flicker noise exponent 1
FC Coefficient for forward bias depletion 0.5
capacitance
TNOM Parameter measurement °C 27
temperature

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Simulator Reference Manual

Examples

BF244 U430 Temp=100

Q1 Q2

Q2 is a U430 with a local temperature of 100°C.

Lossy Transmission Line


Netlist Entry

Oxxxx p1 n1 p2 n2 modelname [IC=v1,i1,v2,i2]

p1 Positive input port 1


n1 Negative input port 1
p2 Positive input port 2
n2 Negative input port 2
modelname Name of model defined in a .MODEL control (page 207). Must
begin with a letter but can contain any character except
whitespace and period '.' .
v1,i1,v2,i2 Initial conditions for voltage at port 1, current at port 1, voltage
at port 2 and current at port 2 respectively. These only have an
effect if the UIC parameter is specified on the .TRAN control
(page 241).

Model Syntax

.model modelname LTRA ( parameters )

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Chapter 4 Analog Device Reference

Model Parameters

Name Description Units Default

R Resistance/unit length Ω/unit length 0.0


L Inductance/unit length Henrys/unit length 0.0
G Conductance/unit length Siemens(mhos)/unit length 0.0
C Capacitance/unit length Farads/unit length 0.0
LEN Length Required
REL Relative rate of change of derivative for breakpoint 1.0
ABS Absolute rate of change of derivative for breakpoint 1.0

The parameters REL and ABS control the way the line is simulated rather than its
electrical characteristics. More accurate results (at the expense of simulation time) can
be obtained by using lower values.

Notes The uniform RLC/RC/LC/RG transmission line model (LTRA) models a


uniform constant-parameter distributed transmission line. The LC case may
also be modelled using the lossless transmission line model. The operation
of the lossy transmission line model is based on the convolution of the
transmission line's impulse responses with its inputs.

The following types of lines have been implemented:

RLC Transmission line with series loss only


RC Uniform RC line
LC Lossless line
RG Distributed series resistance and parallel conductance

All other combinations will lead to an error.

REL and ABS are model parameters that control the setting of breakpoints.
A breakpoint is a point in time when an analysis is unconditionally
performed. The more there are the more accurate the result but the longer it
will take to arrive. Reducing REL and/or ABS will yield greater precision.

Example

T1

RG58_10m

The above could represent a 10 metre length of RG58 cable. The parameters would be
described in a .model control e.g.

.model RG58_10m LTRA(R=0.1 C=100p L=250n LEN=10)

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Simulator Reference Manual

MOSFET
Note Level 1,2,3 and 17 MOSFETs are described in this section. For BSIM3
devices see page 94 and for BSIM4 see page 95. For MOS9, MOS11 and
other Philips devices see page 123

Netlist Entry

Mxxxx drain gate source bulk modelname [L=length] [W=width]


+ [AD=drain_area] [AS=source_area]
+ [PD=drain_perimeter] [PS=source_perimeter]
+ [NRD=drain_squares] [NRS=source_squares]
+ [NRB=bulk_squares]
+ [OFF] [IC=vds,vgs,vbs] [TEMP=local_temp] [M=area]

drain Drain node


gate Gate node
source Source node
bulk Bulk (substrate) node
modelname Name of model. Must begin with a letter but can contain any
character except whitespace and period '.'
(The following 8 parameters are not supported by the level 17 MOSFET model)
length Channel length (metres).
width Channel width (metres).
drain_area Drain area (m2).
source_area Source area (m2).
drain_perimeter Drain perimeter (metres).
source_perimeter Source perimeter (metres).
drain_squares Equivalent number of squares for drain resistance
source_squares Equivalent number of squares for source resistance
gate_squares Equivalent number of squares for gate resistance. Level=3 only
bulk_squares Equivalent number of squares for gate resistance. Level=3 only
OFF Instructs simulator to calculate operating point analysis with
device initially off. This is used in latching circuits such as
thyristors and bistables to induce a particular state. See page 214
for more details.
vds, vgs, vbs Initial condition voltages for drain-source gate-source and
bulk(=substrate)-source respectively. These only have an effect
if the UIC parameter is specified on the .TRAN control
(page 241).
local_temp Local temperature. Overrides specification in .OPTIONS

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Chapter 4 Analog Device Reference

(page 215) or .TEMP (page 238) controls.


dtemp Differential temperature. Similar to local_temp but is specified
relative to circuit temperature. If both TEMP and DTEMP are
specified, TEMP takes precedence. Currently implemented only
for LEVEL 1,2 and 3.
Notes SIMetrix supports four types of MOSFET model specified in the model
definition. These are referred to as levels 1, 2, 3 and 7. Levels 1,2, and 3 are
the same as the SPICE2 and SPICE3 equivalents. Level 17 is proprietary to
SIMetrix. For further information see Level 17 MOSFET parameters
below.

NMOS Model Syntax

.model modelname NMOS ( level=level_number parameters )

PMOS Model Syntax

.model modelname PMOS ( level=level_number parameters )

MOS Levels 1, 2 and 3: Model Parameters

Name Description Units Default Levels

VTO or VT0 Threshold voltage V 0.0 all


KP Transconductance parameter A/V2 2.0e-5 all

GAMMA Bulk threshold parameter √V 0.0 all


PHI Surface potential V 0.6 all
LAMBDA Channel length modulation 1/V 0.0 all
RG Gate ohmic resistance Ω 0.0 1,3
RD Drain ohmic resistance Ω 0.0 all
RS Source ohmic resistance Ω 0.0 all
RB Bulk ohmic resistance Ω 0.0 3
RDS Drain-source shunt Ω ∞ 3
resistance
CBD B-D junction capacitance F 0.0 all
CBS B-S junction capacitance F 0.0 all
IS Bulk junction sat. current A 1.0e-14 all
PB Bulk junction potential V 0.8 all
CGSO Gate-source overlap F/m 0.0 all
capacitance
CGDO Gate-drain overlap F/m 0.0 all
capacitance

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Simulator Reference Manual

Name Description Units Default Levels

CGBO Gate-bulk overlap F/m 0.0 all


capacitance
RSH Drain and source diffusion Ω/sq. 0.0 all
resistance
CJ Zero bias bulk junction F/m2 See all
bottom capacitance/sq-metre note
of junction area
MJ Bulk junction bottom grading 0.5 all
coefficient
CJSW Zero bias bulk junction F/m 0.0 all
sidewall capacitance
MJSW Bulk junction sidewall 0.5 1
grading coefficient
MJSW as above 0.33 2,3
JS Bulk junction saturation A/m2 0.0 all
current/sq-metre of junction
area
JSSW Bulk p-n saturation sidewall A/m 0.0 3
current/length
TT Bulk p-n transit time secs 0.0 3
TOX Oxide thickness metre 1e-7 all
NSUB Substrate doping 1/cm3 0.0 all

NSS Surface state density 1/cm2 0.0 all

NFS Fast surface state density 1/cm2 0.0 2,3

TPG Type of gate material: all


+1 opposite. to substrate
-1 same as substrate
0 Al gate
XJ Metallurgical junction depth metre 0.0 2,3
LD Lateral diffusion metre 0.0 all
UO Surface mobility cm2/Vs 600 all

UCRIT Critical field for mobility V/cm 0.0 2


UEXP Critical field exponent in 0.0 2
mobility degradation
UTRA Transverse field coefficient 0.0 1,3
(mobility)
VMAX Maximum drift velocity of m/s 0.0 2,3
carriers

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Chapter 4 Analog Device Reference

Name Description Units Default Levels

NEFF Total channel charge (fixed 1.0 2


and mobile) coefficient
FC Forward bias depletion 0.5 all
capacitance coefficient
TNOM, Parameter measurement °C 27 all
T_MEASURED temperature
T_ABS Model operating temperature °C .TEMP all
T_REL_GLOBAL Temperature relative to °C 0 all
current temperature
KF Flicker noise coefficient 0.0 all
AF Flicker noise exponent 1.0 all
DELTA Width effect on threshold 0.0 2,3
voltage
THETA Mobility modulation 1/V 0.0 3
ETA Static feedback 0.0 3
KAPPA Saturation field factor 0.2 3
W Width metre DEFW all
L Length metre DEFL all

CJ Default

If not specified CJ defaults to √(εs*q* NSUB* 1e6 /(2*PB))


where
εs = 1.03594314e-10 (permittivity of silicon)
q = 1.6021918e-19 (electronic charge)
NSUB, PB model parameters

Notes for levels 1, 2 and 3:

The three levels 1 to 3 are as follows:

LEVEL 1 Shichman-Hodges model. The simplest and is similar to the


JFET model
LEVEL 2 A complex model which models the device according to an
understanding of the device physics
LEVEL 3 Simpler than level 2. Uses a semi-empirical approach i.e. the
device equations are partly based on observed effects rather than
the theory governing its operation
The L and W parameters perform the same function as the L and W parameters on the
device line. If omitted altogether they are set to the option values (set with .OPTIONS

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Simulator Reference Manual

control - see page 215) DEFL and DEFW respectively. These values in turn default to
100 microns.

The above models differ from all other SIMetrix (and SPICE) models in that they
contain many geometry relative parameters. The geometry of the device (length, width
etc.) is entered on a per component basis and various electrical characteristics are
calculated from parameters which are scaled according to those dimensions. This is
approach is very much geared towards integrated circuit simulation and is
inconvenient for discrete devices. If you are modelling a particular device by hand we
recommend you use the level 17 model which is designed for discrete vertical devices.

MOS Level 17: Model Parameters

Name Description Units Default

VTO or Threshold voltage V 0.0


VT0
KP Transconductance parameter A/V2 2.0e-5

GAMMA Bulk threshold parameter √V 0.0


PHI Surface potential V 0.6
LAMBDA Channel length modulation 1/V 0.0
RD Drain ohmic resistance Ω 0.0
RS Source ohmic resistance Ω 0.0
CBD B-D junction capacitance F 0.0
CBS B-S junction capacitance F 0.0
IS Bulk junction sat. current A 1.0e-14
PB Bulk junction potential V 0.8
CGSO Gate-source overlap capacitance F 0.0
CGBO Gate-bulk overlap capacitance F 0.0
CJ Zero bias bulk junction bottom capacitance F 0.0
MJ Bulk junction bottom grading coefficient 0.5
CJSW Zero bias bulk junction sidewall capacitance F 0.0
MJSW Bulk junction sidewall grading coefficient 0.5
FC Forward bias depletion capacitance 0.5
coefficient
TNOM Parameter measurement temperature °C 27
KF Flicker noise coefficient 0.0
AF Flicker noise exponent 1.0
CGDMAX Maximum value of gate-drain capacitance F 0.0
CGDMIN Minimum value of gate-drain capacitance F 0.0

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Chapter 4 Analog Device Reference

Name Description Units Default

XG1CGD cgd max-min crossover gradient 1.0


XG2CGD cgd max-min crossover gradient 1.0
VTCGD cgd max-min crossover threshold voltage V 0.0
TC1RD First order temperature coefficient of RD 1/°C 0.0
TC2RD Second order temperature coefficient of RD 1/°C2 0.0

Notes for level 17

In SIMetrix version 5.2 and earlier, this model used a level parameter value of 7
instead of the current 17. The number was changed so that a PSpice compatible BSIM3
model (level=7) could be offered. In order to retain backward compatibility, any level
7 model containing the parameters cgdmax, cgdmin, xg1cgd, xg2cgd or vtcgd will
automatically be switched to level=17.

The level 17 MOSFET was developed to model discrete vertical MOS transistors
rather than the integrated lateral devices that levels 1 to 3 are aimed at. Level 17 is
based on level 1 but has the following important additions and changes:

• New parameters to model gate-drain capacitance


• 2 new parameters to model rdson variation with temperature.
• All parameters are absolute rather than geometry relative. (e.g. capacitance is
specified in farads not farads/meter)
All MOSFET models supplied with SIMetrix are level 17 types. Many models
supplied by manufacturers are subcircuits made up from a level 1, 2 or 3 device with
additional circuitry to correctly model the gate-drain capacitance. While the latter
approach can be reasonably accurate it tends to be slow because of its complexity.

Gate-drain capacitance equation:

Cgd = ( 0. 5 − π1 . tan −1 (( VTCGD − v ). − XG1CGD)).CGDMIN


+( 0. 5 − π1 . tan −1 (( VTCGD − v ). XG2CGD)).CGDMAX
where v is the gate-drain voltage.
This is an empirical formula devised to fit measured characteristics. Despite this it has
been found to follow actual measured capacitance to remarkable accuracy.

To model gate-drain capacitance quickly and to acceptable accuracy set the five Cgd
parameters as follows:

1. Set CGDMIN to minimum possible value of Cgd i.e. when device is off and drain
voltage at maximum.
2. Set CGDMAX to maximum value of Cgd i.e. when device is on with drain-source
voltage low and gate-source voltage high. If this value is not known use twice the
value of Cgd for Vgd=0.

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Simulator Reference Manual

3. Set XG2CGD to 0.5, XG1CGD to 0.1 and leave VTCGD at default of 0.


Although the parasitic reverse diode is modelled, it is connected inside the terminal
resistances, RD and RS which does not represent real devices very well. Further,
parameters such as transit time (TT) which model the reverse recovery characteristics
of the parasitic diode are not included. For this reason it is recommended that the
reverse diode is modelled as an external component. Models supplied with SIMetrix
are subcircuits which include this external diode.

BSIM3 MOSFETs

Notes
The BSIM3 model is only available with the Micron versions of SIMetrix. Three
versions are supplied namely 3.1, 3.24 and 3.3. Our implementation of version 3.1
includes all bug fixes applied to the latest version but the device equations and
supported parameters are for the original version 3.1. See below to find out how to
switch versions.

BSIM3 models can be accessed using one of four values for the LEVEL parameter:

LEVEL=7 specifies a PSpice compatible model


LEVEL=8 specifies the standard Berkeley BSIM3 model.
LEVEL=49 specifies the Star-Hspice implementation using the Hspice junction
capacitance model.
LEVEL=53 is also a Star-Hspice version but uses the standard Berkeley junction cap
model.

The following PSpice parameters are supported when using level 7:


TT, L, W, RG, RD, RS, RB, RDS, JSSW

The following Star-Hspice parameters are supported when using level 49/53:
CJGATE, HDIF, LDIF, WMLT, XL, XW, IS, N, NDS, VNDS, PHP,
LMLT, CTA, CTP, PTA, PTP, TREF, RD, RS, RDC, RSC, CBD, CBS, FC, TT,
LD, WD, EG, GAP1, GAP2, XLREF, XWREF, ACM, CALCACM, TLEV, TLEVC

The Star-Hspice noise model is also supported for NLEV=0,1 and 2.

The 'M' instance parameter has also been implemented with all variants. This specifies
the number of equivalent parallel devices.

Additional temperature parameters:


All variants support the TEMP and DTEMP instance parameters. TEMP specifies
absolute temperature (Celsius) while DTEMP specifies the temperature relative to the
circuit global temperature.

All variants support the model parameters T_MEASURED (equivalent to TNOM),


T_ABS (as TEMP instance parameter) and T_REL_GLOBAL (as DTEMP instance
parameter)

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Chapter 4 Analog Device Reference

Version Selector
The VERSION parameter can be specified to select which version is used. As detailed
above, SIMetrix supports three different BSIM3 versions although 8 versions have
been released by Berkeley. The following table shows which version will actually be
used according to the VERSION parameter value.

VERSION parameter Use BSIM3 Version

3.0 3.1
3.1 3.1
3.2 3.24
3.21 3.24
3.22 3.24
3.23 3.24
3.24 3.24
3.3 3.3
not specified 3.3

Note that a second decimal point will be ignored so 3.2.4 is the same as 3.24. If the
version parameter is set to a value not listed above, SIMetrix will raise an error
condition. This can be overridden by setting .OPTION AnyVersion.

Further Documentation
Original Berkeley documentation is provided on the CDROM in PDF form.

Process Binning
BSIM3 devices may be binned according to length and width. Refer to “Model
Binning” on page 44 for details.

BSIM4 MOSFETs

Notes
The BSIM4 model is only available with the Micron versions of SIMetrix.

BSIM4 models are accessed using LEVEL=14.

Versions 4.21, 4.3, 4.4 and 4.5 are currently supported. To set the version to be used,
use the VERSION parameter as defined in the following table:

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Simulator Reference Manual

VERSION parameter Use BSIM4 version

4.0 4.21
4.1 4.21
4.2 4.21
4.21 4.21
4.3 4.3
4.4 4.4
4.5 4.5
4.6 4.6
4.61 4.61
Omitted 4.61
Other See notes

Note that a second decimal point will be ignored so 4.2.1 is the same as 4.21. If the
version parameter is set to a value not listed above, SIMetrix will raise an error
condition. This can be overridden by setting .OPTION AnyVersion.

The implementation is standard Berkeley but with the addition of the 'M' instance
parameter which specifies the number of equivalent parallel devices.

Further Documentation
Original Berkeley documentation is provided on the CDROM in PDF form. Note the
document covers version 4.61 of the model. Earlier versions are available from the
BSIM3/4 web site at [Link]

Process Binning
BSIM4 devices may be binned according to length and width. Refer to “Model
Binning” on page 44 for details. Note the multi-fingered devices are binned according
to width per finger. This is a change from SIMetrix versions 5.3 and earlier. To restore
behaviour of the earlier versions, set option BinOnTotalWidth using:

.options BinOnTotalWidth

EKV MOSFETs

Notes
This is the Enz-Krummenacher-Vittoz MOSFET model version 2.6 and is only
available with the Micron versions of SIMetrix.

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Chapter 4 Analog Device Reference

The models are accessed using LEVEL=44.

Our version implements the full charge conserving capacitance model but in the
absence of benchmark circuits this is not yet fully tested. The DC characteristics have
been successfully tested using published test circuits and results.

MOSFET GMIN Implementation


GMIN is a conductance added to all non-linear devices to improve DC convergence.
For LEVEL 1-3 and LEVEL 17 MOSFETs, the default GMIN is implemented as
shown below:

GMIN

GMIN

This is compatible with SPICE and earlier versions of SIMetrix.

For BSIM3, BSIM4 and EKV devices, and also for LEVEL1-3 and LEVEL 17 devices
if the NEWGMIN .OPTIONS setting is set, the GMIN implementation is:

OLDMOSGMIN

MOSGMIN

OLDMOSGMIN

OLDMOSGMIN is a .OPTIONS setting with the default value of zero. MOSGMIN is


also a .OPTIONS setting with the default value of GMIN. Using the above
configuration with OLDMOSGMIN =0 often converges faster especially if the
Junction GMIN stepping algorithm is used.

PSP MOSFET
Netlist Entry

Mxxxx drain gate source bulk modelname [instance_parameters]


Where:
drain Drain node
gate Gate node

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Simulator Reference Manual

source Source node


bulk Bulk node
modelname Model name referring to a .MODEL statement
instance_parameters List of name/parameter pairs in form name=value. name maybe
any of the following:

W, L, AS, AD, PS, PD, MULT, SA, SB, ABSOURCE,


LSSOURCE, LGSOURCE, ABDRAIN, LSDRAIN,
LGDRAIN

Refer to PSP documentation (see below) for further details.

NMOS Model Syntax

MODEL modelname NMOS LEVEL=1010 parameters


OR
.MODEL modelname PSP101 type=1 parameters

PMOS Model Syntax

.MODEL modelname PMOS LEVEL=1010 parameters


OR
.MODEL modelname PSP101 type=-1 parameters
Refer to PSP documentation (see below) for details of parameters

Notes

This is a model jointly developed by NXP (formerly Philips Semiconductor) and


Pensylvania State University.

The model provided is version 101.0, non-binning, non-NQS geometric version.

The model was implemented from the Verilog-A description.

Documentation for the model is supplied on the install CD

Resistor
Netlist Entry

Rxxxx n1 n2 [model_name] [value] [L=length] [W=width]


[ACRES=ac_resistance] [TEMP=local_temp] [TC1=tc1] [TC2=tc2]
[M=mult] [DTEMP=dtemp]

n1 Node 1
n2 Node 2

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Chapter 4 Analog Device Reference

model_name (Optional) Name of model. Must begin with a letter but can
contain any character except whitespace and ' . '
value Resistance (W)
length Length of resistive element in metres. Only used if value is
omitted. See notes below
width Width of resistive element in metres. Only used if value is
omitted. See notes below
ac_resistance Resistance used for AC analyses and for the calculation of
thermal noise. If omitted, value defaults to final resistance
value.
local_temp Resistor temperature (°C)
tc1 First order temperature coefficient
tc2 Second order temperature coefficient
mult Device multiplier. Equivalent to putting mult devices in parallel.
dtemp Differential temperature. Similar to local_temp but is specified
relative to circuit temperature. If both TEMP and DTEMP are
specified, TEMP takes precedence.

Notes

• If model_name is omitted, value must be specified.


• If model_name is present and value is omitted, length and width must be
specified in which case the value of the resistance is RES * RSH * L/W where
RSH is the sheet resistance model parameter and RES is the resistance multiplier.
See model parameters below. If ACRES is specified and non-zero its value will
be used unconditionally for AC analyses and the calculation of thermal noise.

Resistor Model Syntax

.model modelname R ( parameters )

Resistor Model Parameters

Name Description Units Default

RES Resistance multiplier 1


TC1 First order temperature coefficient 1/°C 0
TC2 Second order temperature coefficient 1/°C2 0
RSH Sheet resistance Ω/sq 0
KF Flicker noise coefficient m2/Ω2 0
EF Flicker noise exponent 1

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Simulator Reference Manual

Notes

The flicker noise parameters are proprietary to SIMetrix. Flicker noise voltage is:

Vn2 = KF * RSH2/(L*W) * Vr2 * ∆f/fEF

Where:
Vr = Voltage across resistor.

The equation has been formulated so that KF is constant for a given resistive material.

If one of L, W is not specified, the flicker noise voltage becomes:

vn2 = KF * R2 * Vr2 * ∆f/fEF

Where R is the final resistance.

i.e. the noise current is independent of resistance. This doesn't have any particular basis
in physical laws and is implemented this way simply for convenience. When resistor
dimensions and resistivity are unavailable, the value of KF will need to be extracted
for each individual value.

Resistor - Hspice Compatible


Netlist Entry

Rxxxx n1 n2 [model_name] [value] [L=length] [W=width]


[AC=ac_resistance] [TC1=tc1] [TC2=tc2] [M=mult] [SCALE=scale]
[DTEMP=dtemp] [C=c]
model_name Name of .MODEL. This is compulsory unless this model is re-
mapped as the default resistor using a device configuration file.
See “Customising Device Configuration” on page 46
value Value of resistor. This may be an expression relating parameters
defined using .PARAM and circuit variables in the form
V(n1,n2) and I(device). Expressions must be enclosed in curly
braces or quotation marks. Typically the expression relates to
the resistor’s own terminals in order to define voltage
dependence
length Length in metres
width Width in metres
ac_resistance Value of resistor for AC analyses. Like the main value, this may
also be an expression. See above under value for details
tc1 First order temperature coefficient
tc2 Second order temperature coefficient
mult Device multiplier. Equivalent to putting mult devices in parallel,
but note that this value does not have to be integral
scale Scales resistance and capacitance values. E.g. Reff=scale*R

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Chapter 4 Analog Device Reference

dtemp Differential temperature. Device temperature = global


temperature + dtemp
c Capacitance to reference node

Resistor Model Syntax

.model modelname R (LEVEL=2 parameters )

Name Description Units Default

BULK Bulk connection for capacitance Ground


CAP Device capacitance F 0.0
CAPSW Sidewall capacitance F/m 0.0
COX Capacitance per unit area F/m 2 0.0

CRATIO Capacitance terminal distribution 0.5


DI Dielectric constant 0.0
DL Difference between drawn length and m DW
actual length for capacitance calculation
DLR Difference between drawn length and m 0.0
actual length for resistance calculation
DW Difference between drawn width and m 0.0
actual width
L, ML Length m 0.0
W, MW Width m 0.0
NOISE Noise multiplier 1.0
RAC AC resistance Ω
RES Resistance Ω 0.0
RSH Sheet resistance Ω/sq 0.0
SHRINK Shrink factor 1.0
TC1C Capacitance first order temperature 1/C 0.0
coefficient
TC1R Resistance first order temperature 1/C 0.0
coefficient
TC2C Capacitance second order temperature 1/C2 0.0
coefficient

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Name Description Units Default

TC2R Resistance second order temperature 1/C2 0.0


coefficient
THICK Dielectric thickness m 0.0
TREF Measurement temperature C TNOM
ACRESMOD AC resistance model selector. See 0
“ACRESMOD Parameter” on page 104

Resistance Calculation
In the following reff is the effective non-temperature adjusted resistance used for DC
analyses, reffac is the effective non-temperature adjusted resistance used for AC
analyses.

If instance resistance is specified:

reff = value * SCALE/M


otherwise if weff*leff*RSH>0

reff = SCALE*RSH*leff / (weff*M)


where:
weff = SHRINK*W - 2*DW
leff = SHRINK*L - 2*DLR
otherwise

reff = SCALE*RES/M
If instance AC parameter is specified:

raceff = AC*SCALE/M
otherwise if RAC given

raceff = SCALE*RAC/M
otherwise

raceff = reff

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Chapter 4 Analog Device Reference

Capacitance Calculation

capef f * CRATIO capef f * (1-CRATIO)

BULK

capeff is the non temperature adjusted capacitance.

If instance parameter C is given:

capeff = M*SCALE*C
otherwise if model parameter CAP is given

capeff = M*SCALE*CAP
otherwise

capeff = (leffc*weffc*coxmod + 2*((leffc+weffc)*CAPSW))*M*SCALE


where:
leffc = SHRINK*L - 2*DL
weffc = SHRINK*W - 2*DW
See below for coxmod calculation

Calculation of COX

If COX given

coxmod = COX
otherwise if THICK <> 0 AND DI<>0

coxmod = 8.8542149e-012*DI/THICK
otherwise if THICK <> 0 AND DI=0

coxmod = 3.453148e-011/THICK
otherwise

coxmod = 0.0

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Temperature Scaling

Resistance

R(t) = reff * tscale


where:

tscale = 1+(tc1inst+tdelta*tc2inst)*tdelta
where
tdelta = tinst-TREF-273.15
tc1inst = if instance TC1 given: TC1 else TC1R
tc2inst = if instance TC2 given: TC2 else TC2R
tinst = [global circuit temperature] + DTEMP (Kelvin)

Capacitance

C(t) = capeff * tscale


where
tcscale = 1+(TC1C+tdelta*TC2C)*tdelta
tdelta defined above.

ACRESMOD Parameter
This parameter controls the calculation of resistance in AC analysis. With
ACRESMOD=0 AC analysis uses the large signal resistance value, that is the value of
resistance calculated during the DC analysis. If ACRESMOD=1, the small signal
resistance is used, that is, the value of dv/di at the operating point. If the resistance is
defined as an expression containing circuit variables (i.e. it is voltage dependent), the
large signal resistance is different to the small signal resistance.

This resistor model has been developed primarily for compatibility with Hspice
models. Hspice itself always uses the large signal resistance. However, this will create
a discrepancy between AC analysis and a transient analysis of a small signal. To
resolve this discrepancy, set ACRESMOD to 1.

In summary, to be compatible with Hspice, use ACRESMOD=0, for consistent results


between AC and transient analyses, use ACRESMOD=1.

In noise analysis the large signal value is always used.

Making the Hspice Resistor the Default


This resistor model requires the specification of a model name and the creation of a
.MODEL statement with LEVEL=2. This is likely to be inconvenient if a model file
containing Hspice resistors is being used.

To overcome this, a device configuration file can be created that maps this resistor
model to the default. For full details see “Customising Device Configuration” on
page 46. The line required to make this resistor the default is:

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Chapter 4 Analog Device Reference

ModelName=R,Device=HspiceRes,Level=0

S-domain Transfer Function Block


Netlist entry:

Axxxx input output model_name

Connection details

Name Description Flow Default Allowed


type types

in Input in v v, vd, i, id
out Output out v v, vd, i, id

Model format

.MODEL model_name s_xfer parameters

Model parameters

Name Description Type Default Limits Vector


bounds

in_offset Input offset real 0 none n/a


gain Gain real 1 none n/a
laplace Laplace expression string none none n/a
(overrides num_coeff
and den_coeff)
num_coeff Numerator real none none 1-∞
polynomial coefficient vector
den_coeff Denominator real none none 1-∞
polynomial coefficient vector
int_ic Integrator stage initial real 0 none none
conditions vector
denormalized_freq Frequency (radians/ real 1 none n/a
second) at which to
denormalize
coefficients

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Simulator Reference Manual

Description
This device implements an arbitrary linear transfer function expressed in the frequency
domain using the 'S' variable. The operation and specification of the device is
illustrated with the following examples.

Examples

Example 1 - A single pole filter

1/(s+1)
LAP1

LAP1-OUTP

V1 1K
AC 1 0 R1

Model for above device:

.model Laplace s_xfer laplace="1/(s+1)" denormalized_freq=1

This is a simple first order roll off with a 1 second time constant as shown below

400m

200m

100m

40m

20m

10m 20m 40m 100m 200m 400m 1 2 4 10

Frequency / Hertz

Example 1 Frequency response

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Chapter 4 Analog Device Reference

Example 2 - Single pole and zero


.model Laplace s_xfer
+ laplace="(1/s)/(1/s + 1/(0.1*s+1))"
+ denormalized_freq=1

The laplace expression has been entered how it might have been written down without
any attempt to simplify it. The above actually simplifies to (0.1*s+1)/(1.1*s+1)

500m

200m

100m

10m 20m 40m 100m 200m 400m 1 2 4 10

Frequency / Hertz

Example 2 Frequency response

Example 3 - Underdamped second order response


.model Laplace s_xfer
+ laplace="1/(s2+1.1*s+1)"
+ denormalized_freq=2k

The above expression is a second order response that is slightly underdamped. The
following graph shows the transient response.

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Simulator Reference Manual

0.8

0.6

0.4

0.2

0
0 2 4 6 8 10

Time/mSecs 2mSecs/div

Example 3 Frequency response

Example 4 - 5th order Chebyshev low-pass filter

The S-domain transfer block has a number of built in functions to implement standard
filter response. Here is an example. This is a 5th order chebyshev with -3dB at 100Hz
and 0.5dB passband ripple.

.model Laplace s_xfer


+ laplace="chebyshevLP(5,100,0.5)"
+ denormalized_freq=1

and the response:

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Chapter 4 Analog Device Reference

100m

10m

1m

100µ

10µ

1µ1 2 4 10 20 40 100 200 400 1k

Frequency / Hertz

Example 3 Frequency response

The Laplace Expression


As seen in the above examples, the transfer function of the device is defined by the
model parameter LAPLACE. This is a text string and must be enclosed in double
quotation marks. This may be any arithmetic expression containing the following
elements:

Operators:
+-*/^
^ means raise to power. Only integral powers may be specified.

Constants
Any decimal number following normal rules. SPICE style engineering suffixes are
accepted.

S Variable
This can be raised to a power with '^' or by simply placing a constant directly after it
(with no spaces). E.g. s^2 is the same as s2.

Filter response functions


These are:

BesselLP(order, cut-off)Bessel low-pass


BesselHP(order, cut-off)Bessel high-pass
ButterworthLP(order, cut-off)Butterworth low-pass
ButterworthHP(order, cut-off)Butterworth high-pass
ChebyshevLP(order, cut-off, passband_ripple)Chebyshev low-pass
ChebyshevHP(order, cut-off, passband_ripple)Chebyshev high-pass

Where:
order Integer specifying order of filter. There is no maximum limit but
in practice orders larger than about 50 tend to give accuracy

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Simulator Reference Manual

problems.
cut-off -3dB Frequency in Hertz
passband_ripple Chebyshev only. Passband ripple spec. in dB

Other Model Parameters


• DENORMALISED_FREQ is a frequency scaling factor.
• INT_IC specifies the initial conditions for the device. This is an array of
maximum size equal to the order of the denominator. The right-most value is the
zero’th order initial condition.
• NUM_COEFF and DEN_COEFF are largely redundant but included for
compatibility with other XSPICE products. They allow the literal definition of
the numerator and denominator coefficients as an array.
• GAIN and IN_OFFSET are the DC gain and input offset respectively

Limitations
SIMetrix expands the expression you enter to create a quotient of two polynomials. If
the constant terms of both numerator and denominator are both zero, both are divided
by S. That process is repeated until one or both of the polynomials has a non-zero
constant term.

The result of this process must satisfy the following:

• The order the denominator must be greater than or equal to that of the numerator.
• The constant term of the denominator may not be zero.

The XSPICE S_XFER model


The SIMetrix Laplace transfer model is compatible with the original XSPICE version
but the transient analysis portion of it has been completely rewritten. The original
XSPICE version was seriously flawed and would only give accurate results if the
timestep was forced to be very small. Further, convergence would fail if the device was
used inside a feedback loop.

The ability to enter the laplace transform as an arbitrary expression is a SIMetrix


enhancement. The original version required the user to enter the coefficients of the
numerator and denominator explicitly. The filter response functions are also a SIMetrix
enhancement.

Subcircuit Instance
Netlist Entry

Xxxxx n1 n2 n3 ... subcircuit_name [pinnames: pin1 pin2 pin3 ...]


[[params]: [M=m] expression1 expression2 ....]

n1, n2 etc. Subcircuit nodes

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Chapter 4 Analog Device Reference

pin1, pin2 etc. If the pinnames: keyword is included the names following it
will be used to name subcircuit current vectors generated by the
simulator.
subcircuit_name Subcircuit name referred to in subcircuit definition (i.e. with
.SUBCKT control page 237)
m Multiplier. If present, the subcircuit will be multiplied by m as if
there were m devices in parallel. m may be an expression in
which case it must be enclosed by curly braces: ‘{‘, ‘}’.

Note that the multiplication is performed by scaling the internal


devices not by actually replicating the subcircuit. Non integral
values of m are thus permitted. Some types of device can not
currently be scaled and subcircuits containing them will not
support M. An error will displayed in this case.

M will be interpreted as a regular parameter and will not scale


the subcircuit instance if M is declared as a parameter in the
.SUBCKT line or the following option setting is included in the
netlist:

.OPTIONS DisableSubcktMultiplier
expression1 etc. Parameter expressions. See “Using Expressions” on page 29.
See “Subcircuits” on page 40 for more information.

Transmission Line
Netlist Entry

Txxxx p1 n1 p2 n2 Z0=impedance [TD=delay] [F=frequency


[NL=norm_length]] [rel=rel] [abs=abs]

p1 Positive input port 1


n1 Negative input port 2
p2 Positive input port 1
n2 Negative input port 2
impedance characteristic impedance
delay Line delay (Seconds)
frequency Alternative means of specifying delay=norm_length/frequency
norm_length See frequency. Default 0.25 if omitted.
TD takes precedence over NL/F. Either TD or F must be specified.

These remaining parameters control the way the line is simulated rather than its
electrical characteristics. More accurate results (at the expense of simulation time) can
be obtained by using lower values.

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Simulator Reference Manual

rel Relative rate of change of derivative for breakpoint


abs Absolute rate of change of derivative for breakpoint

Example

T1

Z0=50 TD=1u

The above line has an impedance of 50Ω and a delay of 1µS.

Voltage Controlled Current Source


Netlist Entry

Gxxxx nout+ nout- vc+ vc- transconductance

nout+ Positive output node


nout- Negative output node
vc+ Positive control node
vc- Negative control node
transconductance Output current/Input voltage (Siemens or mhos)

SPICE2 polynomial sources are also supported in order to maintain compatibility with
commercially available libraries for IC's. (Most operational amplifier models for
example use several polynomial sources). In general, however the arbitrary source (see
page 52) is more flexible and easier to use.

The netlist format for a polynomial source is:

Gxxxx nout+ nout- POLY( num_inputs ) vc1+ vc1- vc2+ vc2- ...
+ polynomial_specification

vc1+ etc. Controlling nodes


num_inputs Number of controlling node pairs for source.
polynomial_specification See “Polynomial Specification” on page 70

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Chapter 4 Analog Device Reference

Voltage Controlled Switch


Netlist Entry

Sxxxx nout1 nout2 vc+ vc- modelname

nout1 Switch node 1


nout2 Switch node 2
vc+ Positive control node
vc- Negative control node
modelname Name of model. Must begin with a letter but can contain any
character except whitespace and period '.' .

Voltage Controlled Switch Model Syntax

.model modelname VSWITCH ( parameters )


OR
.model modelname SW ( parameters )

Voltage Controlled Switch Model Parameters

Name Description Units Default

RON On resistance Ω 1
ROFF Off resistance Ω 1/GMIN
VON Voltage at which switch begins to turn on V 1
VOFF Voltage at which switch begins to turn off V 0

Voltage Controlled Switch Notes


The voltage controlled switch is a type of voltage controlled resistor. Between VON
and VOFF the resistance varies gradually following a cubic law.

GMIN is a simulation parameter which defaults to 10-12 but which can changed using
the .OPTION control (page 215).

The SIMetrix voltage controlled switch is compatible with PSpice but is


incompatible with the standard SPICE 3 version. The latter has an abrupt switching
action which can give convergence problems with some circuits.

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Simulator Reference Manual

Voltage Controlled Voltage Source


Netlist Entry

Exxxx nout+ nout- vc+ vc- gain

nout+ Positive output node


nout- Negative output node
vc+ Positive control node
vc- Negative control node
gain Output voltage/Input voltage

SPICE2 polynomial sources are also supported in order to maintain compatibility with
commercially available libraries for ICs. (Most opamp models for example use several
polynomial sources). In general, however the arbitrary source is more flexible and
easier to use.

The netlist format for a polynomial source is:

Exxxx nout+ nout- POLY( num_inputs ) vc1+ vc1- vc2+ vc2- ...
polynomial_specification

vc1+ etc. Controlling nodes


num_inputs Number of controlling node pairs for source.
polynomial_specification See “Polynomial Specification” on page 70

Voltage Source
Netlist Entry

Vxxxx n+ n- [[DC] dcvalue] [DCOP] [INFCAP] [AC magnitude


[phase]] [transient_spec]

N+ Positive node
N- Negative node
DCOP If this is specified, the voltage source will only be active during
the DC operating point solution. In other analyses, it will behave
like an open circuit. This is an effective method of creating a
‘hard’ initial condition. See “Alternative Initial Condition
Implementations” on page 203 for an example.
INFCAP If specified, the voltage source will behave as an infinite
capacitor. During the DC operating point solution it will behave
like an open circuit. In the subsequent analysis, it will behave
like a voltage source with a value equal to the solution found
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during the operating point. Note that the device is inactive for
DC sweeps - as all capacitors are.
dcvalue Value of source for dc operating point analysis
magnitude AC magnitude for AC sweep analysis.
phase phase for AC sweep analysis
transient_spec Specification for time varying source as described in the
following table.

Type Description Page

PULSE Pulse source. Also generates, ramps, sawtooths 115


and triangles
PWL Piece wise linear source. Can create any waveform 116
PWLFILE As PWL but get definition from a file 117
SIN Sine wave 118
EXP Exponential signal 119
SFFM Single frequency FM 120
NOISE Real time noise source 120

Pulse Source
PULSE ( v1 v2 [td [tr [tf [pw [per ]]]]] )

Where:

Name Description Default

v1 Initial value (V,A) Compulsory


v2 Pulsed value (V,A) Compulsory
td Delay time (S) Default if omitted = 0
tr Rise time (S) Default if omitted, negative or zero = Time
stepa
tf Fall time (S) Default if omitted, negative or zero = Time
step
pw Pulse width (S) Default if omitted or negative = Stop timeb
per Period (S) Default if omitted, negative or zero = Stop
time

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a. Time step is set up by the .TRAN simulator control which defines a transient
analysis. Refer to “.TRAN” on page 241
b. Stop time refers to the end time of the transient analysis.

SIMetrix deviates from standard SPICE in the action taken for a pulse width of zero.
Standard SPICE treats a zero pulse width as if it had been omitted and changes it to the
stop time. In SIMetrix a zero pulse width means just that.

Both the above examples give a pulse lasting 5µS with a period of 10µS, rise and fall
times of 100nS and a delay of 0. The voltage source has a 0V base line and a pulse of
5V while the current source has a 0mA base line and a pulse of 1mA.

← PW →← TF →
→ ← TD

t=0
→ ← TR

← PER →

Examples

V1 I1
pulse ( 0 5 0 100n 100n 5u 10u ) pulse ( 0 1mA 0 100n 100n 5u 10u )

Piece-Wise Linear Source


PWL ( t1 v1 [t2 v2 [t3 v3 [... ]]] )

Each pair of values (ti vi) specifies that the value of the source is vi at time = ti. The
value of the source at intermediate values of time is determined by using linear
interpolation on the input values.

Although the example given below is for a voltage source, the PWL stimulus may be
used for current sources as well.

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Example

V1
pwl ( 0 -5 10n -5 11n -3 17n -3 18n -7 50n -7 )

Gives:-
1: :r1_p

-3.5
-4
-4.5
-5
V

-5.5
-6
-6.5
-70 20 40 60 80 100

Time/nSecs 20nSecs/div

PWL File Source


PWLFILE filename

This performs the same function as the normal piece wise linear source except that the
values are read from a file named filename.

The file contains a list of time voltage pairs in text form separated by any whitespace
character (space, tab, new line). It is not necessary to add the '+' continuation character
for new lines but they will be ignored if they are included. Any non-numeric data
contained in the file will also be ignored.

Notes
The PWLFILE source is considerably more efficient at reading large PWL definitions
than the standard PWL source. Consequently it is recommended that all PWL
definitions with more than 200 points are defined in this way.

The data output by Show /file is directly compatible with the PWLFILE source making
it possible to save the output of one simulation and use it as a stimulus for another. It is
recommended, however, that the results are first interpolated to evenly spaced points
using the Interp() function.

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The use of engineering suffixes (e.g. k, m, p etc.) is not supported by PWLFILE.

The PWLFILE source is a feature of SIMetrix and does not form part of standard
SPICE.

Note, you can use the simulator controls .FILE and .ENDF to define the contents of the
file. E.g.

Vpwl1 N1 N2 PWLFILE pwlSource


...
.FILE pwlSource
...
...
.ENDF

This will be read in much more efficiently than the standard PWL and is recommended
for large definitions. See “.FILE and .ENDF” on page 194 .

Sinusoidal Source
SIN[E] ( vo va [freq [delay [theta [ phase]]]] )

Where:

Name Description Default

vo Offset (V,A) Compulsory


va Peak (V,A) Compulsory
freq Frequency (Hz) Default if omitted or zero= 1/Stop timea
delay Delay (seconds) Default if omitted = 0
theta Damping factor (1/ Default if omitted = 0
seconds)
phase Phase in degrees Default if omitted = 0
a. Stop time refers to the end time of the transient analysis.

The shape of the waveform is described by:

0 to delay: vo
delay to Stop time vo + va.e-(t-delay)..[Link](2.π.(freq.(t - delay) + phase/360))

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Chapter 4 Analog Device Reference

Example

V1
sin ( 0 1 100meg 10nS )

Gives output of:

1: :r1_p

0.8

0.6

0.4

0.2

0
V

-0.2

-0.4

-0.6

-0.8

-10 5 10 15 20 25

Time/nSecs 5nSecs/div

Exponential Source
EXP ( v1 v2 [td1 [tau1 [td2 [tau2 ]]]] )

Where:

Name Description Default

v1 Initial value (V,A) Compulsory


v2 Pulsed value (V,A) Compulsory
td1 Rise delay time Default if omitted or zero: 0
tau1 Rise time constant Default if omitted or zero: Time stepa
td2 Fall delay time Default if omitted or zero: td1 + Time step
tau2 Fall time constant Default if omitted or zero: Time step
a. Time step is set up by the .TRAN simulator directive which defines a transient
analysis. Refer to “.TRAN” on page 241

Defined by:
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td1 to td2: v1 + (v2 - v1). [ 1 - e-(t-td1)/tau1]


td2 to stop time: v1 + (v2 - v1). [ 1 - e-(t-td1)/tau1] + v1 + (v2 - v1). [ 1 - e-(t-td2)/tau2]

Single Frequency FM
SFFM ( vo va [fc [mdi [fs ]]] )

Where:

Name Description Default

vo Offset (V,A) Compulsory


va Amplitude (V,A) Compulsory
fc Carrier frequency (Hz) Default if omitted or zero = 1/Stop timea
mdi Modulation index Default if omitted = 0
fs Signal frequency (Hz) Default if omitted or zero = 1/Stop time
a. Stop time refers to the end time of the transient analysis.

Defined by: vo + [Link][2.π.fc.t + [Link](2.π.fs.t)]

Noise Source
noise interval rms_value [start_time [stop_time]]

Source generates a random value at interval with distribution such that spectrum of
signal generated is approximately flat up to frequency equal to 1/(2*interval).
Amplitude of noise is rms_value volts. start_time and stop_time provide a means of
specifying a time window over which the source is enabled. Outside this time window,
the source will be zero. If stop_time is omitted or zero a value of infinity will be
assumed.

Extended PWL Source


PWLS [TIME_SCALE_FACTOR=time_factor]
[VALUE_SCALE_FACTOR=value_factor] pwls_spec [ pwls_spec ... ]
Where:
time_factor Scales all time values in definition by time_factor
value_factor Scales all magnitude values by value_factor
pwls_spec may be one of the following
(time, value) Creates a single data point. time is relative to the current
context.
(+time, value) Creates a single data point. time is relative to the previous point.

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REPEAT FOR n pwls_spec ENDREPEAT


Repeats pwls_spec n times.
REPEAT FOREVER pwls_spec ENDREPEAT
Repeats pwls_spec forever
SIN sine_parameters END
Creates a sinusoid. See table below for definition of
sine_parameters
PULSE pulse_parameters END
Creates a pulse train. See table below for definition of
pulse_parameters

Sine Parameters

Name Description Default Compulsory

FREQ Frequency N/A Yes


PEAK Peak value of sine 1.0 No
OFFSET Offset 0.0 No
DELAY Delay before sine starts. 0.0 No
PHASE Phase 0.0 No
CYCLES Number of cycles. Use -1.0 for infinity -1.0 No
MINPOINTS Minimum number of timesteps used per 13 No
cycle
RAMP Frequency ramp factor 0.0 No

The sine value is defined as follows:

if t>0 OR DELAY<0

PEAK×SIN( f×2π×t+PHASE×π/180) + OFFSET

else
PEAK×SIN( PHASE×π/180) + OFFSET

Where:
f = FREQ + t×RAMP
t = time - tref - DELAY
time is the global simulation time
tref is the reference time for this spec

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Pulse Parameters

Name Description Default Compulsory

V0 Offset 0 No
V1 Positive pulse 1.0 No
value
V2 Negative pules -1.0 No
value
RISE Rise time i.e time PERIOD/1000 No
to change from V2
to V1
FALL Fall time i.e time PERIOD/1000 No
to change from V1
to V2
WIDTH Positive pulse (PERIOD-RISE-FALL)/2 No
width
PERIOD Period N/A Yes
DELAY Delay before start 0 No
CYCLES Number of -1 No
complete cycles. -1
means infinity

RISE, FALL, WIDTH and PERIOD must be greater than zero. DELAY must be
greater than or equal to zero

Mutual Inductor
Specifies coupling between two inductors.

Netlist Entry

Kxxxx l1 l2 coupling_factor

l1 Component reference of first inductor


l2 Component reference of second inductor
coupling_factor Coupling factor, K

L1 L2
1mH 1mH

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Chapter 4 Analog Device Reference

If mutual inductance is M then:

d i L1 di L 2
v L1 = L1 +M
dt dt

di L 2 d i L1
v L2 = L2 +M
dt dt

M
K=
L1 . L2

K cannot be greater than 1.

Notes
You can only couple ideal inductors using this method. The saturable inductor devices
may not be coupled in this way. See “Inductor (Saturable)” on page 79 for more
information.

To use the mutual inductor directly on a schematic you will need to add the device line
to the netlist. See “Adding Extra Netlist Lines” on page 13 for information about how
to do this.

If you wish to couple more than two inductors, the coupling coefficient (K value) must
be specified for every possible combination of two inductors. An error will result if
this is not done.

For iron cored transformers values of K between 0.99 and 0.999 are typical. For
ferrites lower values should be used. If the windings are concentric (i.e. one on top of
the other) then 0.98 to 0.99 are reasonable. If the windings are side by side on a
sectioned former, K values are lower - perhaps 0.9 to 0.95. The addition of air gaps
tends to lower K values.

Example
A transformer with 25:1 turns ratio and primary inductance of 10mH

** Inductors
Lprimary N1 N2 10m
Lsecondary N3 N4 16u

** Coupling of 0.99 typical for ungapped ferrite


K1 Lprimary Lsecondary 0.99

Philips Compact Models


Introduction
SIMetrix supports a range of device models developed by Philips the most important
of which are the MOS9 and MOS11 MOSFETs, the Mextram BJT and the JUNCAP

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diode which is usually used with MOS9 and MOS11. These models are only available
with the Micron versions of SIMetrix. Fully supported modes are:

MOS 9 MOSFET, version 9.02 and 9.03


MOS 11 MOSFET
Mextram BJT version 5.03 and 5.04
Juncap (used with MOS 9 and 11)
The following devices are also included but are not fully supported. Contact technical
support if you wish to use one of these devices.

Level 500 Diode


Level 30 and 30.02 MOSFET
Level 40 SOI MOSFET
Modella lateral BJT

These device have been implemented in SIMetrix by developing an interface between


the SIMetrix simulator and the original Philips source code which was developed for
their own PSTAR simulator. By using this method, we only needed to make small
changes to the original Philips code and most of these have been to implement real
time noise analysis which is not supported by the Philips interface.

The MOS9 and JUNCAP devices have been tested by comparing the simulations of a
benchmark design between SIMetrix and PSTAR. Simulations of bias point, DC
sweep, AC frequency sweep, transient and noise were carried out. The comparison
showed near identical results, in most cases within 0.01%.

Other devices were tested using supplied benchmark results

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Chapter 4 Analog Device Reference

Using Philips Devices

Description Philips SPICE SPICE Device Number


name model Level letter of
type terminals

MOS 9 Electrical, MNE_902 nmos, 102 M 4


version 9.02 MPE_902 pmos
MOS 9 Electrical, MNE_903 nmos, 103 M 4
version 9.03 MPE_903 pmos
MOS 9 Geometric, MN_902 nmos, 202 M 4
version 9.02 MP_902 pmos
MOS 9 Geometric, MN_903 nmos, 203 M 4
version 9.03 MP_903 pmos
MOS 11 Electrical MNE_1100 nmos, 500 M 4
MPE_1100 pmos
MOS 11 Geometric MN_1100 nmos, 600 M 4
MP_1100 pmos
MOS 11.01 Electrical MNE_1101 nmos, 501 M 4
MPE_1101 pmos
MOS 11.01 Geometric MN_11010 nmos, 601 M 4
MP_11010 pmos
MOS 11.01 Geometric MN_11011 nmos, 611 M 4
binned. Not fully MP_11011 pmos
supported - see notes
Juncap JC_1 d 101 D 2
Mextram 4 term 5.03 TNS_503, npn, pnp 103 Q 4
TPS_503
Mextram 4 term 5.04 TNS_504, npn, pnp 104 Q 4
TPS_504
Mextram 4 term 5.04, TNST_504 npn, pnp 1104 Q 5
thermal TPST_504

Notes

The geometric binned version of MOS 11.01 id not yet integrated with the library
binning system. So, to use the binning features of this model, you will need to
manually generate separate model names for each bin.

Some other simulator products add junction capacitance parameters to the original
Philips model. Star-Hspice level 50 is the most common of these. These parameters
need to be modelled with an external device using either a standard SPICE diode or a
JUNCAP device.

The Philips model uses JUNCAP and the usual procedure is to make up the complete
model using a subcircuit of MOS9/11 and JUNCAP devices.

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Currently, 3 terminal Mextram devices are not available, due to the confusion
regarding the optional substrate node in SPICE BJTs.

MOS9/11 and Real Time Noise

Currently the gate thermal noise of the MOS9/11 device is not implemented for real-
time noise analysis. In practice the effect of this noise component is usually small and
only occurs at high frequencies. To investigate the contribution of this component to
overall circuit behaviour, it can be disabled in AC noise analysis by setting the option
NoMos9GateNoise.

Examples
The following is an example showing an nmos MOS 9 device

.MODEL M9 nmos LEVEL = 202,


+ LER = 0.203E-06, WER = 10.056E-06,
+ LVAR = 0.000E-00, LAP = 23.500E-09,
+ WVAR = 0.000E-00, WOT = -28.000E-09,
+ TR = 21.000E-00, VTOR = 0.500E-00,
+ STVTO = 0.000E-00, SLVTO = 35.400E-09,
+ SWVTO = 5.000E-09, SL2VTO = -8.260E-15,
+ KOR = 0.431E-00, SLKO = -3.230E-09,
+ SWKO = 3.610E-09, KR = 0.234E-00,
+ SLK = -93.200E-09, SWK = -68.800E-09,
+ PHIBR = 0.700E-00, VSBXR = -6.232E+00,
+ SLVSBX = -2.280E-06, SWVSBX = 0.000E-00,
+ BETSQ = 0.255E-03, ETABET = 0.000E-00,
+ THE1R = 0.739E-00, STTHE1R = 0.000E-00,
+ SLTHE1R = 0.103E-06, STLTHE1 = 0.000E-00,
+ SWTHE1 = -63.200E-09, THE2R = -0.164E-00,
+ STTHE2R = 0.000E-00, SLTHE2R = -0.064E-06,
+ STLTHE2 = 0.000E-00, SWTHE2 = 3.690E-09,
+ THE3R = 0.416E-00, STTHE3R = 0.000E-00,
+ SLTHE3R = 85.200E-09, STLTHE3 = 0.000E-00,
+ SWTHE3 = 12.400E-09, GAM1R = 90.460E-03,
+ SLGAM1 = 20.600E-09, SWGAM1 = 3.630E-09,
+ ETADSR = 0.600E-00, ALPR = 10.000E-03,
+ ETAALP = 0.000E-00, SLALP = 0.000E-00,
+ SWALP = 0.000E-00, VPR = 0.388E-00,
+ GAMOOR = 33.869E-03, SLGAMOO = 1.370E-15,
+ ETAGAMR = 1.000E-00, MOR = 0.337E-00,
+ STMO = 0.000E-00, SLMO = 20.500E-06,
+ ETAMR = 1.000E-00, ZET1R = 1.419E-00,
+ ETAZET = 0.500E-00, SLZET1 = -0.451E-03,
+ VSBTR = -0.109E-00, SLVSBT = -0.481E-06,
+ A1R = 28.876E-00, STA1 = 0.000E-00,
+ SLA1 = -1.940E-06, SWA1 = 12.400E-06,
+ A2R = 21.540E-00, SLA2 = -0.124E-06,
+ SWA2 = 0.523E-06, A3R = 0.441E-00,
+ SLA3 = -0.112E-06, SWA3 = -16.500E-09,
+ TOX = 5.800E-09, COL = 0.275E-09,
+ NTR = 21.000E-21, NFR = 130.450E-12,
+ W = 10.0e-6 , L = 0.13e-6

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Documentation
Original Philips documentation on these models can be found in a number of PDF files
on the installation CDROM.

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Chapter 5 Digital/Mixed Signal Device Reference

Digital Device Overview


Common Parameters
A number of model parameters are common to most of the digital models. These are
described below.

Family Parameters

These identify the logic family to which the input and outputs belong. Logic families
are explained in detail on page 276. Most models have three family parameters:

Family name Description

in_family Specifies family for inputs. If omitted, the input family is


specified by the FAMILY parameter
out_family Specifies family for outputs. If omitted, the output family is
specified by the FAMILY parameter
family Default value for IN_FAMILY and OUT_FAMILY

Output Parameters

Parameter Description
name

out_res This is used to calculate loading delay. It has dimensions of


Ohms so is referred to as a resistance. The additional
loading delay is calculated by multiplying OUT_RES by the
total capacitative load detected on the node to which the
output connects.
min_sink Used to calculate static loading effects. This is the current
that the device is able to sink. Current flowing out of the pin
is positive so this parameter is usually negative. If the total
sink load current is arithmetically smaller (i.e. more
negative) than this parameter then the output will be forced
to an UNKNOWN state. This is used to implement fan out
limitations in bipolar logic.
max_source Used to calculate static loading effects. This is the current
that the device is able to source. Current flowing out of the
pin is positive. If the total source load current is larger than
this parameter then the output will be forced to an
UNKNOWN state. This is used to implement fan out
limitations in bipolar logic.

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Chapter 5 Digital/Mixed Signal Device Reference

Input Parameters

Parameter Description
name

sink_current Current that the input sinks. Positive current flows into the
device so this parameter is usually negative. The total of all
the input sink currents are added together when a node is in
the logic '0' state. If the total sink load current is
arithmetically smaller (i.e. more negative) than the
MIN_SINK parameter of the device driving the node, then it
will be forced to an UNKNOWN state. This is used to
implement fan out limitations in bipolar logic.
source_current Current that the input sources. Positive current flows into the
device. The total of all the input source currents are added
together when a node is in the logic '1' state. If the total
source load current is larger than the MAX_SOURCE
parameter of the device driving the node, then it will be
forced to an UNKNOWN state. This is used to implement
fan out limitations in bipolar logic.

Delays
Most digital devices have at least one model parameter that specifies a time delay.
Unless otherwise noted, all delays are inertial. This means that glitches shorter than the
delay time will be swallowed and not passed on. For example, the following
waveforms show the input and output of a gate that has a propagation delay of 10nS.
The first pulse is only 5nS so does not appear at the output. The second pulse is 20nS
so therefore is present at the output delayed by 10nS.

Input

Output

0 20 40 60 80

Time/nSecs 20nSecs/div

The Buffer device has an optional stored delay (also known as transport delay)
parameter that makes possible the specification of pure delays.

And Gate
Netlist entry:

Axxxx [ in_0 in_1 .. in_n ] out model_name

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Connection details

Name Description Flow Type Vector


bounds

in Input in d, vector 2 - ∞
out Output out d n/a

Model format

.MODEL model_name d_and parameters

Model parameters

Name Description Type Default Limits

rise_delay Rise delay real 1nS 1e-12 - ∞


fall_delay Fall delay real 1nS 1e-12 - ∞
input_load Input load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞
open_c Open collector output boolean FALSE none
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device operation

• If the model parameter OPEN_C is false, The output will be at logic '0' if either
input is at logic '0'. Otherwise, if any input is UNKNOWN, the output will be
UNKNOWN. Otherwise the output will be at logic '1'.
• If the model parameter OPEN_C is true the device will be open collector. In this
case the output logic state is always '0'. The state of the inputs instead determines
the strength of the output. If either input is at logic '0' the output strength will be
STRONG. Otherwise if any input is UNKNOWN the output strength will be
UNDETERMINED. Otherwise the output strength will be HI-IMPEDANCE
allowing a pull-up resistor to force it to the logic '1' state.

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D-type Latch

D SET Q
EN
QN
RST

Netlist entry

Axxxx data enable set reset out nout model_name

Connection details

Name Description Flow Type

data Input data in d


enable Enable in d
set Asynchronous set in d
reset Asynchronous reset in d
out Data output out d
nout Inverted data output out d

Model format

.MODEL model_name d_dlatch parameters

Model parameters

Name Description Type Default Limits

data_delay Delay from data real 1nS 1e-12 - ∞


enable_delay Delay from enable real 1nS 1e-12 - ∞
set_delay Delay from set real 1nS 1e-12 - ∞
reset_delay Delay from reset real 1nS 1e-12 - ∞
ic Output initial state integer 0 0-2
0: logic '0'
1: logic '1
2: UNKNOWN
rise_delay Rise delay real 1nS 1e-12 - ∞
fall_delay Fall delay real 1nS 1e-12 - ∞

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Name Description Type Default Limits

data_load Data load value (F) real 1pF none


enable_load Enable load value (F) real 1pF none
set_load Set load value (F) real 1pF none
reset_load Reset load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation
The device is a level triggered latch with a single data input, complimentary outputs
and active high asynchronous set and reset. The operation of the device is illustrated in
the following diagram:

DATA

ENABLE

OUTPUT

0 1 2 3 4 5

Time/µSecs 1µSecs/div

data_delay+fall_delay
enable_delay+fall_delay

data_delay+rise_delay

The asynchronous inputs (set and reset) override the action of the enable and data
lines.

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D-type Flip Flop

D SET Q

QN
RST

Netlist entry

Axxxx data clk set reset out nout model_name

Connection details

Name Description Flow Type

data Input data in d


clk Clock in d
set Asynchronous set in d
reset Asynchronous reset in d
out Data output out d
nout Inverted data output out d

Model format

.MODEL model_name d_dff parameters

Model parameters

Name Description Type Default Limits

clk_delay Delay from clk real 1nS 1e-12 - ∞


set_delay Delay from set real 1nS 1e-12 - ∞
reset_delay Delay from reset real 1nS 1e-12 - ∞
ic Output initial state integer 0 0-2
0: logic '0'
1: logic '1
2: UNKNOWN
rise_delay Rise delay real 1nS 1e-12 - ∞
fall_delay Fall delay real 1nS 1e-12 - ∞
data_load Data load value (F) real 1pF none

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Name Description Type Default Limits

clk_load Clk load value (F) real 1pF none


set_load Set load value (F) real 1pF none
reset_load Reset load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

The device is an edge triggered D-type flip flop with active high asynchronous set and
reset. The operation of the device is illustrated by the following diagram

CLOCK

RESET

0 1 2 3 4 5

Time/µSecs 1µSecs/div
clk_delay+fall_delay

reset_delay+fall_delay

clk_delay+rise_delay

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Buffer
Netlist entry

Axxxx in out model_name

Connection details

Name Description Flow Type

in Input in d
out Output out d

Model format

.MODEL model_name d_buffer parameters

Model parameters

Name Description Type Default Limits

rise_delay Rise delay real 1nS 1e-12 - ∞


fall_delay Fall delay real 1nS 1e-12 - ∞
stored_delay Stored delay (overrides real 0 0-∞
rise_delay and fall_delay)
input_load Input load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞
open_c Open collector output boolean FALSE none
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none
open_e Open emitter output boolean FALSE none

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Device Operation

This device is a simple buffer with a single input and output. It can optionally be
specified to have an open collector (open_c parameter) or open emitter (open_e
parameter) output. Further, if the stored_delay parameter is specified, the device will
act as a pure delay. This means that it will pass pulses that are shorter than the delay
time whereas normally (delay specified by rise_delay and fall_delay) such pulse would
be swallowed. (stored_delay is also known as transport delay)

The following table describes the device operation in detail

OPEN_C OPEN_E Input Output Output strength


parameter parameter state

FALSE FALSE 0 0 STRONG


FALSE FALSE 1 1 STRONG
FALSE FALSE UNKNOWN UNKNOWN STRONG
FALSE TRUE 0 0 HI-IMPEDANCE
FALSE TRUE 1 1 STRONG
FALSE TRUE UNKNOWN UNKNOWN UNDETERMINED
TRUE FALSE 0 0 STRONG
TRUE FALSE 1 0 HI-IMPEDANCE
TRUE FALSE UNKNOWN 0 UNDETERMINED
TRUE TRUE 0 1 HI-IMPEDANCE
TRUE TRUE 1 0 HI-IMPEDANCE
TRUE TRUE UNKNOWN UNKNOWN UNDETERMINED

Note the difference between open emitter and open collector operation. These modes
have been designed to be as close to as possible to real devices, in particular their
behaviour into an open circuit. An open emitter output, when switching from high to
low is likely to follow the voltage on the device's base due to the base-emitter
capacitance so the output state follows the input state. An open collector (or open
drain) output on the other hand will remain in the low state when its input switches.

Frequency Divider
Freq. Div

Netlist entry

Axxxx freq_in freq_out model_name

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Connection details

Name Description Flow Type

freq_in Frequency input in d


freq_out Frequency output out d

Model format

.MODEL model_name d_fdiv parameters

Model parameters

Name Description Type Default Limits

div_factor Divide factor integer 2 1-∞


high_cycles Number of high clock cycles integer 1 1-∞
i_count Output initial count value integer 0 0-∞
rise_delay Rise delay real 1nS 1e-12 - ∞
fall_delay Fall delay real 1nS 1e-12 - ∞
freq_in_load Freq_in load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

This device is a positive edge triggered frequency divider. Three model parameters
allow arbitrary definition of the divide ratio, output duty cycle, output phase and initial
delay. Operation of the frequency divider is illustrated by the following diagram which
shows the output of a frequency divider with a DIV_FACTOR of 10 and two
alternative values of HIGH_CYCLES.

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Clock

high_cycles=1

high_cycles=4

0 10 20 30 40 50

Time/µSecs 10µSecs/div

The above was carried out with I_COUNT=0. I_COUNT is the initial value of the
internal counter. The output first goes high when it attains a value of 1 or
1+DIVIDE_RATIO so when I_COUNT is zero (the default) the output first goes high
after the first rising edge. If I_COUNT is set to 5 the output first goes high after the 6th
rising edge and if I_COUNT is -20, the 21st rising edge.

Digital Initial Condition


Netlist entry

Axxxx out model_name

Connection details

Name Description Flow Type

out Output out d

Model format

.MODEL model_name d_init parameters

Model parameters

Name Description Type Default Limits

ic Initial state integer 0 none


is Initial strength integer 1 none
1 = STRONG
0 = RESISTIVE
out_family Output logic family string UNIV none

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Device Operation

This device has the defined initial state (IC parameter) and initial strength (IS
parameter) during the DC operating point solution, then reverts to HI-IMPEDANCE
for the remainder of the analysis.

Digital Pulse
Netlist entry

Axxxx out model_name : parameters

Connection details

Name Description Flow Type

out Output out d

Instance parameters

Name Description Type

period Pulse period real


delay Delay real
duty Duty cycle real
width Pulse width real
open_out Open emitter output boolean

Model format

.MODEL model_name d_pulse parameters

Model parameters

Name Description Type Default Limits

duty Duty cycle real 0.5 1e-06 -


0.999999
delay Initial delay real 0 0-∞
period Period real 1µS 1e-12 - ∞
If zero, a single pulse will be
output
width Pulse width (overrides duty if real period * 0-∞
specified) duty

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Name Description Type Default Limits

open_out Open emitter output boolean FALSE none


out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none

Device Operation

This device supplies a repetitive or single pulse of defined period, delay and width.
Optionally, the device may be specified to have an open emitter output allowing
several pulse sources to be wire OR'ed to create complex pulses. All 5 main .MODEL
parameters may also be specified on the device line as instance parameters in which
case they override any values specified in the .MODEL control.

If OPEN_OUT is specified and true, a pull down resistor must be connected to the
output.

Digital Signal Source


Netlist entry

Axxxx [ out_0 out_1 .. out_n ] model_name

Connection details

Name Description Flow Type

out Output out d, vector

Model format

.MODEL model_name d_source parameters

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Model parameters

Name Description Type Default Limits

input_file Digital input vector filename string none none


out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none

Device Operation

The digital signal source provides a multi bit arbitrary digital signal defined in a file.

File Format
The file is in ASCII format and is in the form of a table each row being on a new line.
The first column defines the time values while the entries in the remaining columns
define the output value for each of the outputs. So the total number of columns must be
the number of outputs plus one. The output values must appear in the same order as the
outputs in the netlist entry. So, the values for out_0 will be in column 2, out_1 in
column 3 etc.

The file may include blank lines and comment lines beginning with a '*'.

The output values must specify the state as well as the strength using the following
codes:

Code State-Strength

0S LOW-STRONG
1S HIGH-STRONG
US UNKNOWN-STRONG
0R LOW-RESISTIVE
1R HIGH-RESISTIVE
UR UNKNOWN-RESISTIVE
0Z LOW-HI-Z
1Z HIGH-HI-Z

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Code State-Strength

UZ UNKNOWN-HI-Z
0U LOW-UNDETERMINED
1U HIGH-UNDETERMINED
UU UNKNOWN-UNDETERMINED

Note, these codes are not case sensitive.

Example

The following file:

* This is an example source file


0.0 0s 0s 0r 1s
1u 0s 0s 0r 0z
2u 0s 0s 1r 0z
5u 1s 0s 1r 0z
22e-6 1s 1s 1r 0z
50u 0s 1s 1r 0z
60u 0s 1s 1r 0z
70u 0s 1s 1r 0z
80u 0s 1s 1r 0z
90u Us Us Ur 0s

and this circuit:

U2 OUT_0
SOURCE
OUT_1
OUT_2
OUT_3 4.7k

R1
V1
1n 2.5
C1

Produces the following waveforms

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OUT_0

OUT_1

OUT_2

OUT_3

0 20 40 60 80

Time/µSecs 20µSecs/div

An error will result if the file fails in any way to comply with the format. There must
be the exact number of entries in each row and the time values must be monotonic.
Totally blank lines or lines containing only white space are permitted but any other
non-comment line not complying with the format will fail.

Inverter

Netlist entry

Axxxx in out model_name

Connection details

Name Description Flow Type

in Input in d
out Output out d

Model format

.MODEL model_name d_inverter parameters

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Model parameters

Name Description Type Default Limits

rise_delay Rise delay real 1nS 1e-12 - ∞


fall_delay Fall delay real 1nS 1e-12 - ∞
input_load Input load value (F) real 1pF none
family Logic family string HC none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞
open_c Open collector output boolean FALSE none
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

If the OPEN_C parameter is not specified or is FALSE, this device simply inverts the
state of its input. I.e. if the input is logic '0' the output will be logic '1' and vice-versa. If
the input is UNKNOWN the output will also be UNKNOWN.

If OPEN_C is TRUE, the output state is always at logic '0' and the input determines its
strength. If the input is at logic '1' the output strength is STRONG and if it is at logic '0'
the output strength is HI-IMPEDANCE. The output strength will be
UNDETERMINED if the input is UNKNOWN.

JK Flip Flop
Netlist entry

Axxxx j k clk set reset out nout model_name

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Connection details

Name Description Flow Type

j J input in d
k K input in d
clk Clock in d
set Asynchronous set in d
reset Asynchronous reset in d
out Data output out d
nout Inverted data output out d

Model format

.MODEL model_name d_jkff parameters

Model parameters

Name Description Type Default Limits

clk_delay Delay from clk real 1nS 1e-12 - ∞


set_delay Delay from set real 1nS 1e-12 - ∞
reset_delay Delay from reset real 1nS 1e-12 - ∞
ic Output initial state integer 0 0-2
rise_delay Rise delay real 1nS 1e-12 - ∞
fall_delay Fall delay real 1nS 1e-12 - ∞
jk_load J,k load values (F) real 1pF none
clk_load Clk load value (F) real 1pF none
set_load Set load value (F) real 1pF none
reset_load Reset load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞

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Name Description Type Default Limits

min_sink Minimum sink current real -0.001 none


max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

The following circuit and graph illustrate the operation of this device:

Counter_4
U3
D0
D1
U1-J
D2
U1
D3 JK_FlipFlop
SET U1-Q
J Q
U2
U1-CLK U1-QN
K QN
U1-K RST

U1-CLK

U1-J

U1-K

U1-Q

U1-QN

0 2 4 6 8 10 12 14 16 18 20

Time/µSecs 2µSecs/div
clk_delay+rise_delay

clk_delay+fall_delay

The following table describes the operation of the device when both inputs are at
known states: The output can only change on a positive edge of the clock.

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J input K input Output

0 0 No change
0 1 0
1 0 1
1 1 toggle

When either input is UNKNOWN, the situation is more complicated. There are some
circumstances when a known state can be clocked to the output even if one of the
inputs is unknown. The following table describes the operation for all possible input
states. X means UNKNOWN.

J input K input old output new output

0 0 0 0
0 0 1 1
0 0 X X
0 1 0 0
0 1 1 0
0 1 X 0
0 X 0 0
0 X 1 X
0 X X X
1 0 0 1
1 0 1 1
1 0 X 1
1 1 0 1
1 1 1 0
1 1 X X
1 X 0 1
1 X 1 X
1 X X X
X 0 0 X
X 0 1 1
X 0 X X

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J input K input old output new output

X 1 0 X
X 1 1` 0
X 1 X X
X X 0 X
X X 1 X
X X X X

Arbitrary Logic Block


Netlist entry

Axxxx [ in_0 in_1 .. in_n ] [ out_0 out_1 .. out_n ]


+ model_name : parameters

Connection details

Name Description Flow Type

in Input in d, vector
out Output out d, vector

Instance Parameters

Name Description Type

trace_file Trace file string


user User device params real
vector

Model format

.MODEL model_name d_logic_block parameters

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Model parameters

Name Description Type Default Limits Vector


bounds

file Definition file name string none none n/a


def Definition string none none n/a
out_delay Default output delay real 1n 1p - ∞ n/a
reg_delay Default internal real 1n 0-∞ n/a
register delay
setup_time Default level real 0 0-∞ n/a
triggered setup time
hold_time Default edge real 0 0-∞ n/a
triggered hold time
min_clock Default minimum real 0 0-∞ n/a
clock width
trace_file Trace log file string none n/a
user User defined real none none none
parameters vector
user_scale Scale of user values real 1 0-∞ n/a
input_load Input load value (F) real 1p none n/a
family Logic family string UNIV none n/a
in_family Input logic family string UNIV none n/a
out_family Output logic family string UNIV none n/a
out_res Digital output real 100 0-∞ n/a
resistance
out_res_pos Digital output res. real out_res 0-∞ n/a
pos. slope
out_res_neg Digital output res. out_res 0-∞ n/a
neg. slope
sink_current Input sink current real 0 none n/a
source_current Input source current real 0 none n/a

Device Operation

See “Arbitrary Logic Block - User Defined Models” on page 281.

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Nand Gate
Netlist entry

Axxxx [ in_0 in_1 .. in_n ] out model_name

Connection details

Name Description Flow Type Vector


bounds

in Input in d, vector 2 - ∞
out Output out d n/a

Model format

.MODEL model_name d_nand parameters

Model parameters

Name Description Type Default Limits

rise_delay Rise delay real 1nS 1e-12 - ∞


fall_delay Fall delay real 1nS 1e-12 - ∞
input_load Input load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope out_res 0-∞
open_c Open collector output boolean FALSE none
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device operation

• If the model parameter OPEN_C is false, The output will be at logic '1' if either
input is at logic '0'. Otherwise, if any input is UNKNOWN, the output will be
UNKNOWN. Otherwise the output will be at logic '0'.
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• If the model parameter OPEN_C is true the device will be open collector. In this
case the output logic state is always '0'. The state of the inputs instead determines
the strength of the output. If either input is at logic '0' the output strength will be
HI-IMPEDANCE allowing a pull-up resistor to force it to the logic '1' state.
Otherwise if any input is UNKNOWN the output strength will be
UNDETERMINED. Otherwise the output strength will be STRONG.

Nor Gate
Netlist entry

Axxxx [ in_0 in_1 .. in_n ] out model_name

Connection details

Name Description Flow Type Vector


bounds

in Input in d, vector 2 - ∞
out Output out d n/a

Model format

.MODEL model_name d_nor parameters

Model parameters

Name Description Type Default Limits

rise_delay Rise delay real 1nS 1e-12 - ∞


fall_delay Fall delay real 1nS 1e-12 - ∞
input_load Input load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope real out_res 0-∞
open_c Open collector output boolean FALSE none

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Name Description Type Default Limits

min_sink Minimum sink current real -0.001 none


max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device operation

• If the model parameter OPEN_C is false, The output will be at logic '0' if either
input is at logic '1'. Otherwise, if any input is UNKNOWN, the output will be
UNKNOWN. Otherwise the output will be at logic '1'.
• If the model parameter OPEN_C is true the device will be open collector. In this
case the output logic state is always '0'. The state of the inputs instead determines
the strength of the output. If either input is at logic '1' the output strength will be
STRONG. Otherwise if any input is UNKNOWN the output strength will be
UNDETERMINED. Otherwise the output strength will be HI-IMPEDANCE
allowing a pull-up resistor to force it to the logic '1' state.

Open-Collector Buffer
Netlist entry

Axxxx in out model_name

Connection details

Name Description Flow Type

in Input in d
out Output out d

Model format

.MODEL model_name d_open_c parameters

Model parameters

Name Description Type Default Limits

open_delay Open delay real 1nS 1e-12 - ∞


fall_delay Fall delay real 1nS 1e-12 - ∞
input_load Input load value (F) real 1pF none

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Device Operation

This device is included for compatibility with other XSPICE products. It is


recommended that you use the digital buffer device (see page 135) for new designs as
this supports the additional common parameters such as static input loads and families.

The logic description for the open-collector buffer is described by the following table

Input Output state Output strength

0 0 STRONG
1 1 HI-IMPEDANCE
UNKNOWN UNKNOWN UNDETERMINED

Open-Emitter Buffer
Netlist entry

Axxxx in out model_name

Connection details

Name Description Flow Type

in Input in d
out Output out d

Model format

.MODEL model_name d_open_e parameters

Model parameters

Name Description Type Default Limits

rise_delay Rise delay real 1nS 1e-12 - ∞


open_delay Open delay real 1nS 1e-12 - ∞
input_load Input load value (F) real 1pF none

Device Operation

This device is included for compatibility with other XSPICE products. It is


recommended that you use the digital buffer device (see page 135) for new designs as
this supports the additional common parameters such as static input loads and families.

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The logic description for the open-collector buffer is described by the following table

Input Output state Output strength

0 0 HI-IMPEDANCE
1 1 STRONG
UNKNOWN UNKNOWN UNDETERMINED

Or Gate
Netlist entry

Axxxx [ in_0 in_1 .. in_n ] out model_name

Connection details

Name Description Flow Type Vector


bounds

in Input in d, vector 2 - ∞
out Output out d n/a

Model format

.MODEL model_name d_or parameters

Model parameters

Name Description Type Default Limits

rise_delay Rise delay real 1nS 1e-12 - ∞


fall_delay Fall delay real 1nS 1e-12 - ∞
input_load Input load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope real out_res 0-∞
open_c Open collector output boolean FALSE none
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Name Description Type Default Limits

min_sink Minimum sink current real -0.001 none


max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device operation

• If the model parameter OPEN_C is false, The output will be at logic '1' if either
input is at logic '1'. Otherwise, if any input is UNKNOWN, the output will be
UNKNOWN. Otherwise the output will be at logic '0'.
• If the model parameter OPEN_C is true the device will be open collector. In this
case the output logic state is always '0'. The state of the inputs instead determines
the strength of the output. If either input is at logic '1' the output strength will be
HI-IMPEDANCE allowing a pull-up resistor to force it to the logic '1' state.
Otherwise if any input is UNKNOWN the output strength will be
UNDETERMINED. Otherwise the output strength will be STRONG.

Pulldown Resistor
Netlist entry

Axxxx out model_name

Connection details

Name Description Flow Type

out Output out d

Model format

.MODEL model_name d_pulldown parameters

Model parameters

Name Description Type Default Limits

load Load value (F) real 0 none


strong Strong output boolean FALSE none
out_family Output logic family string UNIV none

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Device Operation

This is a single terminal device that can provide either a RESISTIVE or STRONG
logic '0'. When resistive it can be used for wire-OR connected open emitter outputs. If
STRONG is specified (by the STRONG parameter) its main application is as a digital
ground connection.

Pullup Resistor
Netlist entry

Axxxx out model_name

Connection details

Name Description Flow Type

out Output out d

Model format

.MODEL model_name d_pullup parameters

Model parameters

Name Description Type Default Limits

load Load value (F) real 0 none


strong Strong output boolean FALSE none
out_family Output logic family string UNIV none

Device Operation
This is a single terminal device that can provide either a RESISTIVE or STRONG
logic '1'. When resistive it can be used for wire-AND connected open collector outputs.
If STRONG is specified (by the STRONG parameter) its main application is as a
digital VCC connection.

Random Access Memory


Netlist entry

Axxxx [ data_in_0 data_in_1 .. data_in_n ] [ data_out_0 data_out_1 ..


+ data_out_n ] [ address_0 address_1 .. address_n ] write_en
+ [ select_0 select_1 .. select_n ] model_name

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Connection details

Name Description Flow Type Vector


bounds

data_in Data input line(s) in d, vector 1 - ∞


data_out Data output line(s) out d, vector 1 - ∞
address Address input line(s) in d, vector 1 - ∞
write_en Write enable in d n/a
select Chip select line(s) in d, vector 1 - 16

Model format

.MODEL model_name d_ram parameters

Model parameters

Name Description Type Default Limits

select_value Decimal active value for integer 1 0 - 32767


select line comparison
ic Initial bit state @ DC integer 2 0-2
read_delay Read delay from address/ real 1.00E- 1e-12 - ∞
select/write_en active 07
data_load Data_in load value (F) real 1pF none
address_load Address line load value (F) real 1pF none
select_load Select load value (F) real 1pF none
enable_load Enable line load value (F) real 1pF none

Device Operation

This device is provided for compatibility with other XSPICE products and is not
recommended for new designs. In some circumstances, this device can consume large
quantities of system (i.e. your PC's) RAM as it uses an inefficient method of storing
state history. RAM's can also be implemented using the arbitrary logic block (see
page 281) which is much more efficient. An example of a simple 256X8 RAM can be
found amongst the supplied example circuits (Examples\ALB_Examples\[Link]
and [Link]).

Set-Reset Flip-Flop
Netlist entry

Axxxx s r clk set reset out nout model_name


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Connection details

Name Description Flow Type

s S input in d
r R input in d
clk Clock in d
set Asynchronous set in d
reset Asynchronous reset in d
out Data output out d
nout Inverted data output out d

Model format

.MODEL model_name d_srff parameters

Model parameters

Name Description Type Default Limits

clk_delay Delay from clk real 1nS 1e-12 - ∞


set_delay Delay from set real 1nS 1e-12 - ∞
reset_delay Delay from reset real 1nS 1e-12 - ∞
ic Output initial state integer 0 0-2
rise_delay Rise delay real 1nS 1e-12 - ∞
fall_delay Fall delay real 1nS 1e-12 - ∞
sr_load S,r load values (F) real 1pF none
clk_load Clk load value (F) real 1pF none
set_load Set load value (F) real 1pF none
reset_load Reset load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope real out_res 0-∞
open_c Open collector output boolean FALSE none

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Name Description Type Default Limits

min_sink Minimum sink current real -0.001 none


max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

The SR flip flop is similar to a JK flip flop except that the output is UNKNOWN when
both S and R inputs are high. In a JK the output toggles in the same circumstances.

The following table describes the operation of the device when both inputs are at
known states: The output can only change on a positive edge on the clock.

S input R input Output

0 0 No change
0 1 0
1 0 1
1 1 UNKNOWN

When either input is UNKNOWN, the situation is more complicated. There are some
circumstances when a known state can be clocked to the output even if one of the
inputs is unknown. The following table describes the operation for possible input
states. X means UNKNOWN.

S input R input old output new output

0 0 0 0
0 0 1 1
0 0 X X
0 1 0 0
0 1 1 0
0 1 X 0
0 X 0 0
0 X 1 X
0 X X X
1 0 0 1

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S input R input old output new output

1 0 1 1
1 0 X 1
1 1 0 X
1 1 1 X
1 1 X X
1 X 0 X
1 X 1 X
1 X X X
X 0 0 X
X 0 1 1
X 0 X X
X 1 0 X
X 1 1` X
X 1 X X
X X 0 X
X X 1 X
X X X X

SR Latch
Netlist entry

Axxxx s r enable set reset out nout model_name

Connection details

Name Description Flow Type

s S input in d
r R input in d
enable Enable in d
set Asynchronous set in d
reset Asynchronous reset in d
out Data output out d
nout Inverted data output out d

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Model format

.MODEL model_name d_srlatch parameters

Model parameters

Name Description Type Default Limits

sr_delay Delay from s or r input real 1nS 1e-12 -


change ∞∞
enable_delay Delay from clk real 1nS 1e-12 - ∞
set_delay Delay from set real 1nS 1e-12 - ∞
reset_delay Delay from reset real 1nS 1e-12 - ∞
ic Output initial state integer 0 0-2
rise_delay Rise delay real 1nS 1e-12 - ∞
fall_delay Fall delay real 1nS 1e-12 - ∞
sr_load S & r load values (F) real 1pF none
enable_load Clk load value (F) real 1pF none
set_load Set load value (F) real 1pF none
reset_load Reset load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope real out_res 0-∞
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation
This device is identical to the SR flip flop except that it is level not edge triggered.
That is the output may change whenever the enable input is high.

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State Machine
Netlist entry

Axxxx [ in_0 in_1 .. in_n ] clk reset [ out_0 out_1 .. out_n ] model_name

Connection details

Name Description Flow Type Vector


bounds

in Input in d, vector none


clk Clock in d n/a
reset Reset in d n/a
out Output out d, vector 1 - no
upper
bound

Model format

.MODEL model_name d_state parameters

Model parameters

Name Description Type Default Limits

clk_delay Delay from CLK real 1nS none


reset_delay Delay from reset real 1nS none
state_file State transition specification string none none
file name
reset_state Default state on RESET & at integer 0 none
DC
input_load Input loading capacitance (F) real 1pF none
clk_load Clock loading capacitance real 1pF none
(F)
reset_load Reset loading capacitance real 1pF none
(F)
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none

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Notes

Currently this model is unsupported as it has not undergone testing or analysis. It is


part of the original XSPICE system and should be compatible with other
implementations but this cannot be guaranteed.

The following is an example of a state transition specification file

* This is a simple example of a state machine state file


* It is a 2 bit up down counter with synchronous reset

*Present Outputs Inputs State destination


*State for state (reset, up/down)

0 0S 0S 0 0 -> 3
0 1 -> 1
1 0 -> 0
1 1 -> 0

1 0S 1S 0 0 -> 0
0 1 -> 2
1 0 -> 0
1 1 -> 0

2 1S 0S 0 0 -> 1
0 1 -> 3
1 0 -> 0
1 1 -> 0

3 1S 1S 0 0 -> 2
0 1 -> 0
1 0 -> 0
1 1 -> 0

See Examples\Digital_Devices\state_updown.sxsch

Toggle Flip Flop


Netlist entry

Axxxx t clk set reset out nout model_name

Connection details

Name Description Flow Type

t Toggle input in d
clk Clock in d
set Asynchronous set in d
reset Asynchronous reset in d
out Data output out d
nout Inverted data output out d
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Model format

.MODEL model_name d_tff parameters

Model parameters

Name Description Type Default Limits

clk_delay Delay from clk real 1nS 1e-12 - ∞


set_delay Delay from set real 1nS 1e-12 - ∞
reset_delay Delay from reset real 1nS 1e-12 - ∞
ic Output initial state integer 0 0-2
rise_delay Rise delay real 1nS 1e-12 - ∞
fall_delay Fall delay real 1nS 1e-12 - ∞
t_load Toggle load value (F) real 1pF none
clk_load Clk load value (F) real 1pF none
set_load Set load value (F) real 1pF none
reset_load Reset load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope real out_res 0-∞
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

The operation of the toggle flip flop is illustrated by the following diagrams. When the
T input is high, the output toggles on each rising edge of the clock. If the T input is
UNKNOWN the output will be UNKNOWN.

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U3 U1-T

Toggle
U1
SET U1-QP
T
U2
U1-CK

RST

U1-CK

U1-QP

U1-T

0 2 4 6 8 10 12 14

Time/µSecs 2µSecs/div

clk_delay+fall_delay

Tri-State Buffer

Netlist entry

Axxxx in enable out model_name

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Connection details

Name Description Flow Type

in Input in d
enable Enable in d
out Output out d

Model format

.MODEL model_name d_tristate parameters

Model parameters

Name Description Type Default Limits

delay Delay real 1nS 1e-12 - ∞


input_load Input load value (F) real 1pF none
enable_load Enable load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope real out_res 0-∞
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

This is a three terminal buffer device. The output state is equal to the input state and the
output strength is determined by the enable input as follows:

Enable Output Strength

0 HI-IMPEDANCE
1 STRONG
UNKNOWN UNDETERMINED

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Exclusive NOR Gate


Netlist entry

Axxxx [ in_0 in_1 .. in_n ] out model_name

Connection details

Name Description Flow Type Vector


bounds

in Input in d, vector 2 - ∞
out Output out d n/a

Model format

.MODEL model_name d_xnor parameters

Model parameters

Name Description Type Default Limits

rise_delay Rise delay real 1nS 1e-12 - ∞


fall_delay Fall delay real 1nS 1e-12 - ∞
input_load Input load value (pF) real 1 0-∞
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope real out_res 0-∞
open_c Open collector output boolean FALSE none
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

• If the OPEN_C parameter is FALSE, the output is at logic '1' if an even number
of inputs are at logic '1'. If any input is UNKNOWN the output will be
UNKNOWN, otherwise the output will be at logic '0'.
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• If the model parameter OPEN_C is true the device will be open collector. In this
case the output logic state is always '0'. The state of the inputs instead determines
the strength of the output. If n even number of inputs are at logic '1' the output
strength will be HI-IMPEDANCE allowing a pull-up resistor to force it to the
logic '1' state. If any input is UNKNOWN the output strength will be
UNDETERMINED. Otherwise the output strength will be STRONG.

Exclusive OR Gate
Netlist entry

Axxxx [ in_0 in_1 .. in_n ] out model_name

Connection details

Name Description Flow Type Vector


bounds

in Input in d, vector 2 - ∞
out Output out d n/a

Model format

.MODEL model_name d_xor parameters

Model parameters

Name Description Type Default Limits

rise_delay Rise delay real 1nS 1e-12 - ∞


fall_delay Fall delay real 1nS 1e-12 - ∞
input_load Input load value (F) real 1pF none
family Logic family string UNIV none
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. slope real out_res 0-∞
out_res_neg Digital output res. neg. slope real out_res 0-∞
open_c Open collector output boolean FALSE none

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Name Description Type Default Limits

min_sink Minimum sink current real -0.001 none


max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

• If the OPEN_C parameter is FALSE, the output is at logic '1' if an odd number of
inputs are at logic '1'. If any input is UNKNOWN the output will be
UNKNOWN, otherwise the output will be at logic '0'.
• If the model parameter OPEN_C is true the device will be open collector. In this
case the output logic state is always '0'. The state of the inputs instead determines
the strength of the output. If an odd number of inputs are at logic '1' the output
strength will be HI-IMPEDANCE allowing a pull-up resistor to force it to the
logic '1' state. If any input is UNKNOWN the output strength will be
UNDETERMINED. Otherwise the output strength will be STRONG.

Analog-Digital Converter
Netlist entry

Axxxx analog_in clock_in [ data_out_0 data_out_1 .. data_out_n ]


+ data_valid model_name

Connection details

Name Description Flow Type Allowed Vector


types bounds

analog_in Analog input in v v, vd, i, id n/a


clock_in Clock input in d d n/a
data_out Data output out d, vector d 1 - 32
data_valid Data valid output out d d n/a

Model format

.MODEL model_name ad_converter parameters

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Model parameters

Name Description Type Default Limits

input_offset Offset voltage real 0 none


input_range Input full scale signal range real 1 none
twos_complement Use 2's complement boolean FALSE none
output. (default - offset
binary)
convert_time Total conversion time real 1µS 0-∞
min_clock Minimum clock period real 500n 0-∞
data_valid_delay Data valid inactive time real 100n 0-∞
in_family Input logic family string UNIV none
out_family Output logic family string UNIV none
family Logic family string UNIV none
input_load Input load real 1pF 0-∞
out_res Digital output resistance real 100 0-∞
out_res_pos Digital output res. pos. real out_res 0-∞
slope
out_res_neg Digital output res. neg. real out_res 0-∞
slope
min_sink Minimum sink current real -0.001 none
max_source Maximum source current real 0.001 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

This is a 1-32 bit analog to digital converter. The operation of this device is illustrated
by the following diagrams:

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ADC_4
U1
U1-In In D0 U1-D0
D1 U1-D1
U2 U1-Clock D2 U1-D2
V1 D3 U1-D3
Pulse(-2.5 2.5 0 160u 160u)

Data_Valid U1-Data_Valid

convert_time

U1-Clock

U1-D0

U1-D1

U1-D2

U1-D3

U1-Data_Valid

1
Analog in / V
0

-1

-2

0 20 40 60 80 100 120 140 160

Time/µSecs 20µSecs/div

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convert_time

data_valid_delay

U1-Clock

U1-Data_Valid

U1-D0

19 20 21 22 23 24

Time/µSecs 1µSecs/div

Conversion timings.

The ADC starts the conversion at the rising edge of the clock. The analog input signal
is also sampled at this point. The output data changes in response to this,
CONVERT_TIME seconds later. At the same time the data_valid output goes low
(inactive) then high again after a delay equal to DATA_VALID_DELAY. It is possible
to start a new conversion before the previous conversion is complete provided it is
started later than MIN_CLOCK seconds after the previous conversion was started.
MIN_CLOCK must always be less than CONVERT_TIME. If the MIN_CLOCK
specification is violated, the conversion will not start.

Analog-Digital Interface Bridge


Netlist entry

Axxxx in out model_name

Connection details

Name Description Flow Type

in Input inout g
out Output out d

Model format

.MODEL model_name adc_bridge parameters

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Model parameters

Name Description Type Default Limits

in_low Maximum 0-valued analog real 0.1 none


input
in_high Minimum 1-valued analog real 0.9 none
input
rise_delay Rise delay real 1nS 1e-12 - ∞
fall_delay Fall delay real 1nS 1e-12 - ∞
time_tol Threshold time tolerance real 100pS 1e-12 - ∞
out_low Used to calculate reflected real 0 none
static load. See text
out_high Used to calculate reflected real 5 none
static load. See text
clamp_low Clamp threshold 'ZERO' real out_low none
digital input. Default to
out_low
clamp_high Clamp threshold 'ONE' digital real out_high none
input. Default to out_high
clamp_res Clamp minimum resistance real 1 1e-06 - ∞
clamp_bias Clamp voltage real 0.8 0.2 - 2
out_family Output logic family string UNIV none

Device Operation

The analog-digital interface bridge is the main device used to connect analog signals to
digital inputs. The device produces a digital signal that is in the logic '1' state when the
analog input is above the high threshold (IN_HIGH) and a logic '0' state when it is
below the low threshold (IN_LOW). When the analog input is in between these two
states the output will be in the UNKNOWN state. The changes in state will be delayed
according to the RISE_DELAY and FALL_DELAY parameters.

Analog input load

The analog input presents a load to its driving circuit according to the digital load that
is being driven. In other words the digital load is reflected to the analog input. Both
static (i.e. DC) and dynamic (i.e. capacitance) elements of the load are reflected. To
accurately reflect the sink and source currents, the interface bridge needs to know the
voltage levels of the device it is driving. The digital device will (usually) have a
SINK_CURRENT and a SOURCE_CURRENT model parameter each of which apply
at defined logic voltage levels. These levels must be specified in the OUT_LOW and
OUT_HIGH parameters of the AD interface bridge model. The input is modelled by a
current source in parallel with a resistor. The values of these components are calculated
from the above mentioned parameters and the digital load.

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Input clamp

The analog input is clamped at the voltages specified by CLAMP_LOW and


CLAMP_HIGH. The clamping device has a characteristic similar but not identical to a
junction diode in series with a resistance. Basically it has the characteristic of a diode
up to a voltage excess of CLAMP_BIAS after which it becomes resistive with a
dynamic resistance of CLAMP_RES. The diode characteristics are calculated so that
the transition between the two regions is smooth.

Time Step Control - TIME_TOL parameter

Consider the following circuit and waveform

HC00

U1-IN2 U1-OUT

V1
Pulse(0 5 0 5u 5u 50u 100u) U1

U1-OUT

0
30 35 40 45 50 55 60 65 70

Time/µSecs 5µSecs/div

The graph shows the input and output of the NAND gate. Because the input is analog
an implicit AD interface bridge will have been connected by the simulator. In the
above example the parameters for this bridge have been set to:

.model HC_adc adc_bridge


+ in_low=2.1
+ in_high=2.2
+ rise_delay=1e-12
+ fall_delay=1e-12

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+ out_family = "HC"
+ out_low = 0
+ out_high = 5
+ clamp_bias=0.5
+ clamp_res=10
+ time_tol=10u

The last parameter, TIME_TOL has been deliberately set ridiculously high to
demonstrate what happens without time step control on the input. The input thresholds
of the HC gate are 2.1 and 2.2 volts yet the output in the above example doesn't switch
until the input has reached 0V. Because there is little activity in the analog circuit, the
time steps are quite large. In fact in the above example the transient timepoints are at
55uS, 55.04uS, 56.2uS, 57.8uS and 60uS. The timepoint at 57.8u is just before the 2.2
volt threshold is reached and it isn't until the next time point, 2.2uS later that the lower
threshold is broken. The result is the location of the negative edge at the output is
delayed by approx. 2.2uS from where it should be. The problem is that the analog
system knows nothing of what is happening in the digital domain so carries on with
large timesteps oblivious to the errors in the digital system.

To overcome this problem. SIMetrix features a mechanism (not in the original XSPICE
system) that detects that the threshold has been passed and cuts back the time step to
ensure that the digital edge occurs at an accurate point. The accuracy of this
mechanism is controlled by the TIME_TOL parameter. The smaller this parameter, the
more accurately the exact threshold will be hit at the expense of short time steps and
longer simulation runs. TIME_TOL defaults to 100pS and in most applications this is a
good choice. The following shows the result when TIME_TOL is set to the default.

U1-OUT

0
50 52 54 56 58 60 62

Time/µSecs 2µSecs/div

Here you can see the edge at the correct time.

The effect of not correctly simulating the threshold point has serious consequences
when attempting to simulate relaxation oscillators constructed with digital inverters as
the following graphs illustrate:

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-2

-2
0 0.2 0.4 0.6 0.8 1

Time/mSecs 200µSecs/div

The top trace is without threshold control and the bottom trace is with it.

Digital-Analog Converter
Netlist entry

Axxxx [ digital_in_0 digital_in_1 .. digital_in_n ]


+ analog_out model_name

Connection details

Name Description Flow Type Allowed Vector


types bounds

digital_in Data output in d d 1 - 32


analog_out Analog output out v v, vd, i, id n/a

Model format

.MODEL model_name da_converter parameters

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Model parameters

Name Description Type Default Limits

output_offset Offset voltage real 0 none


output_range Input signal range real 1 none
twos_complement Use 2's complement input. boolean FALSE none
(Default is offset binary)
output_slew_time Output slew time real 10nS 1e-12 - ∞
in_family Input logic family string UNIV none
input_load Input load real 1pF 0-∞
sink_current Input sink current real 0 none
source_current Input source current real 0 none

Device Operation

This device is a 1-32 bit digital to analog converter. Its operation is illustrated by the
following diagrams.
Counter_4 DAC_4
U2 U4
U3 U2-D0
D0 D0
U2-D1 U1-OUT
D1 D1 OUT
U2-D2
D2 D2
U2-D3
D3 D3

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U2-D0

U2-D1

U2-D2

U2-D3

1.5

0.5
0

-0.5

-1

-1.5

-2
-2.5
0 10 20 30 40 50

Time/µSecs 10µSecs/div

DAC waveforms

U2-D0

U2-D1

U2-D2

U2-D3

400

200

-200

-400

7.985 7.99 7.995 8 8.005 8.01 8.015 8.02 8.025

Time/µSecs 5nSecs/div

output_slew_time

DAC waveforms expanded to show output slew

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The device illustrated above has the following model definition:

.model DAC_4 da_converter


+ output_slew_time 1e-08
+ output_range 5
+ output_offset 0

In offset binary mode the D-A converter produce an output voltage equal to:

-OUTPUT_RANGE/2 + OUTPUT_OFFSET + code * OUTPUT_RANGE/2n

where n is the number of bits and code is the digital input code represented as an
unsigned number between 0 and 2n-1.

In 2's complement mode the output is:

OUTPUT_OFFSET + code * OUTPUT_RANGE/2n

where n is the number of bits and code is the digital input code represented as a signed
number between -2n/2 and 2n/2-1.

Whenever the input code changes, the output is set on a trajectory to reach the target
value in the time specified by OUTPUT_SLEW_TIME. UNKNOWN states are
ignored. That is the input will be assumed to be at the most recent known state.

Digital-Analog Interface Bridge


Netlist entry

Axxxx in out model_name

Connection details

Name Description Flow Type

in Input in d
out Output inout g

Model format

.MODEL model_name dac_bridge parameters

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Model parameters

Name Description Type Default Limits

out_low Analog output for 'ZERO' real 0 none


digital input
out_high Analog output for 'ONE' real 5 none
digital input
g_resistive Output conductance for real 0.001 none
'RESISTIVE' digital input
g_pullup Output conductance for real 0.01 none
'STRONG' digital high input
g_pulldown Output conductance for real 0.01 none
'STRONG' digital low input
g_hiz Output conductance for real 1.00E- none
'HI_IMPEDANCE' strength 09
input_load Capacitive input load (F) real 1pF none
t_rise Rise time 0 -> 1 real 1nS 1e-12 - ∞
t_fall Fall time 1 -> 0 real 1nS 1e-12 - ∞
knee_high Knee voltage logic high state real 3 none
knee_low Knee voltage logic low real 2 none
sink_current Input sink current real 0 none
source_current Input source current real 0 none
v_smooth Smoothing function offset real 0 0-∞
voltage
in_family Input logic family string UNIV none

DC characteristics
This digital to analog interface bridge is the main device used to connect digital signals
to analog devices. The output provides an analog voltage and source resistance
according to the state and strength of the driving digital input. The output has a non-
linear characteristic that is a simplified model of a typical digital output stage. The
following graphs show the output characteristics for the supplied high speed CMOS
DA bridge. This has the following model parameters:

.model HC_dac dac_bridge


+ out_high=5 ; Logic high voltage
+ input_load=-31p ; Compensates for added rise and fall time
+ t_rise=2n ; Output rise time
+ t_fall=2n ; Output fall time
+ g_pullup=0.024 ; 1/(logic high output resistance)
+ g_pulldown=0.034 ; 1/(logic low output resistance)
+ g_hiz=1e-9 ; 1/(high impedance output res)
+ knee_low = 2.0 ; voltage at resistive/constant current

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+ ; knee logic low


+ knee_high =2.75 ; voltage at resistive/constant current

+ ; knee logic high


+ v_smooth = 0.5 ; Knee smoothing band
+ in_family="HC"

knee_low

60
Slope = g_pulldown
50
Output
Current/mA
40

30

20

10

0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

v1/V 500mV/div

Knee smoothing band

Logic '0' state - strength = STRONG

In the above graph, the slope of the curve at V=0 is determined by the
G_PULLDOWN parameter. The ‘knee smoothing band’ is a transitional area where
the output switches from a constant resistance to a constant current. The smoothing
characteristic is a quadratic and is calculated to be smooth at all points. This is required
for good convergence behaviour. The knee smoothing band starts at KNEE_LOW-
V_SMOOTH and finishes at KNEE_LOW+V_SMOOTH.

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Slope = g_pullup
-10

-20
Output
Current/mA

-30

-40

-50

0 1 2 3 4 5

v1/V 1V/div
knee_high

Logic '1' state - strength = STRONG

If a state with RESISTIVE strength is applied to the input of a digital to analog


interface bridge, the output has the characteristic of a pure resistor connected to the
voltage associated with the input's state. In the example given above, this would be a
1k resistor connected to 0V for the logic '0' state and a 1k resistor connected to +5V for
the logic '1' state. (1k is 1/G_RESISTIVE)

For the HI-IMPEDANCE strength, the output will look like a resistor of value 1/
G_HIZ connected to a voltage half way between the two analog output states. (1G
connected to 2.5V in the above example.)

When the input state is UNKNOWN the output will be as if it were half way between
the two known states. This is a compromise solution. The UNKNOWN state does not
have a parallel in the analog domain so instead it is treated as a transitional state. In
some cases the UNKNOWN state occurs in transitional cases although this is not the
correct meaning of UNKNOWN.

Switching Characteristics
When the logic state at the input changes, the output will transition from the current
state to the target state in a time determined by T_RISE or T_FALL according to the
direction of the state change.

Controlled Digital Oscillator


Netlist entry

Axxxx cntl_in out model_name : parameters

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Connection details

Name Description Flow Type Allowed


types

cntl_in Control input in v v, vd, i, id


out Output out d d

Instance Parameters

Name Description Type

init_phase Initial phase real

Model format

.MODEL model_name d_osc parameters

Model parameters

Name Description Type Default Limits Vector


bounds

cntl_array Control array real vector N/A none 2-∞


freq_array Frequency array real vector N/A 0-∞ 2-∞
duty_cycle Output duty cycle real 0.5 1µ - n/a
0.999999
init_phase Initial phase of real 0 -180 - n/a
output +360
rise_delay Rise delay real 1n 0-∞ n/a
fall_delay Fall delay real 1n 0-∞ n/a
phase_tol Phase tolerance/ real 10 0 - 45 n/a
degrees
out_family Output logic family string UNIV none n/a
out_res Digital output real 100 0-∞ n/a
resistance
out_res_pos Digital output res. real out_res 0-∞ n/a
pos. slope
out_res_neg Digital output res. real out_res 0-∞ n/a
neg. slope

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Device Operation

This device produces an output frequency controlled by an analog input signal


following an arbitrary piece-wise linear law. The input to output frequency
characteristic is defined by two parameters CNTL_ARRAY and FREQ_ARRAY. The
following is an example of a .MODEL control:

.model vco d_osc


+ cntl_array=[-1,0,1,2,3,4,5]
+ freq_array=[0,10000,40000,90000,160000,250000,360000]

The frequency characteristic described by the above example follows a square law. The
two arrays CNTL_ARRAY and FREQ_ARRAY must be the same length. These define
the frequency output for a given analog input.

Time Step Control

In order to control the accuracy of the phase of the output signal, this model may cut
back the analog time step. At each analog time point, the required frequency is
calculated and the digital output is set at that frequency. If the analog input changes by
too large an amount between time points, the digital output phase could be
substantially in error as the frequency is constant between analog time points. The
actual error is calculated and if this exceeds PHASE_TOL, the time point is rejected
and a time point at which the error will be in tolerance is estimated.

Note: This model was included with the original XSPICE code but the SIMetrix
version has been completely re-written. The original did not have any phase error
control and could not give accurate results unless the analog time step was artificially
kept small.

Analog-Digital Schmitt Trigger


Netlist entry

Axxxx in out model_name

Connection details

Name Description Flow Type Allowed


types

in Input inout g g, gd
out Output out d d

Model format

.MODEL model_name adc_schmitt parameters

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Model parameters

Name Description Type Default Limits

in_low Maximum 0-valued analog real 0.1 none


input
in_high Minimum 1-valued analog real 0.9 none
input
rise_delay Rise delay real 1nS 1e-12 - ∞
fall_delay Fall delay real 1nS 1e-12 - ∞
time_tol Threshold time tolerance real 100pS 1e-12 - ∞
out_low Analog out for 'ZERO' input real 0 none
out_high Analog output 'ONE' input real 5 none
clamp_res Clamp minimum resistance real 1 1e-06 - ∞
clamp_bias Clamp voltage real 0.8 0.2 - 2
out_family Output logic family string UNIV none
init_cond Initial condition real 0 none

Device Operation

This device is basically identical to the Analog-Digital Interface Bridge described on


page 172. The only difference is the behaviour of the device when the analog input lies
between the threshold voltages. With the interface bridge, the output is UNKNOWN
under these circumstances but with this Schmitt Trigger, the output retains its previous
value and so is always in a known state. In summary, the output will only switch from
low to high when the input exceeds the higher threshold (IN_HIGH) and will only
switch from high to low when the input descends below the lower threshold
(IN_LOW).

If initial input voltage lies between the hysteresis thresholds, the output state is
determined by the init_cond parameter.

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Chapter 6 Command Reference

Overview
Simulator commands instruct the simulator how to read in and simulate the circuit. All
simulator commands begin with a period ( . ) .

For the remainder of this chapter and elsewhere in this manual, simulator commands
are referred to as ‘Controls’ to distinguish them from commands entered in the
command shell.

The schematic editor supports some of the controls described in this chapter but not all.
Unsupported analysis controls may be added manually to the schematic's netlist. See
“Adding Extra Netlist Lines” on page 13 for details.

.MODEL and .SUBCKT controls may also appear in model library files (in fact that is
where they would usually reside) see User's Manual for details. The .ALIAS control
may only appear in model library files.

The following simulator controls are recognised by SIMetrix.

Control Manual Page

.AC 190
.DC 193
.ENDF 194
.ENDS 237
.FILE 194
.GLOBAL 196
.GRAPH 196
.IC 202
.INC 203
.KEEP 203
.LIB 206
.MODEL 207
.NODESET 210
.NOISE 211
.OP 214
.OPTIONS 215
.PARAM 228

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Control Manual Page

.PRINT 230
.PZ 233
.SENS 233
.SETSOA 233
.SUBCKT 237
.TEMP 238
.TF 238
.TRACE 240
.TRAN 241

The following control is only recognised in model library files.

.ALIAS page 192

General Sweep Specification


Overview
SIMetrix features a common sweeping algorithm which is used to define the swept
analysis modes: .DC, .AC, .NOISE and (now) .TF, along with multiple analyses such
as Monte Carlo.

The sweep algorithm has 6 modes:

• Device. Sweeps a single default value of a specified device. E.g. voltage of a


voltage source, resistance of a resistor or the capacitance of a capacitor.
• Temperature
• Parameter. Parameter can be referenced in an expression for a model or instance
parameter.
• Model parameter. Named model parameter.
• Frequency. (Not applicable to .DC)
• Monte Carlo. Perform a specified number of steps with distribution functions (i.e
tolerances) enabled.
Standard SPICE only provides a subset of the above. .DC can only sweep voltage and
current sources, .AC and .NOISE can only sweep frequency while .TF can't be swept at
all.

As well as providing 6 modes, each of the modes can sweep in four different ways.
These are linear, decade, octave and list.

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Syntax
All the swept analysis modes use the same general syntax to specify the sweep
parameters. However, to maintain compatibility with SPICE and its derivatives
including earlier versions of SIMetrix, each analysis mode allows variations to this
standard syntax. The general syntax is described below while the variations allowed
for each analysis mode are described in the section dedicated to that analysis mode.

All of the analysis modes can optionally be entered in a similar manner to .MODEL
statements i.e. as an unordered list of parameter names followed by their values. For
example, the following is a perfectly legal noise analysis specification:

.noise V=vout DEVICE=V1 VN=0 F=1k LIN=(100 -10m 10m)


+ INSRC=V1

In the various forms of the syntax described in the following sections, some of the
parameter names may be omitted as long as they are entered in a particular order. It is
sometimes, however, easier to remember parameter names rather than a default order,
so the method described above may be more convenient for some users.

General syntax for swept analyses

.AC|.DC|.NOISE|.TF sweep_spec [ analysis specific parameters ]

sweep_spec:
One of the following:

DEVICE device_name step_spec F frequency


TEMP step_spec F frequency
PARAM param_name step_spec F frequency
MODEL model [PARAM] mod_param_name step_spec F frequency
FREQ step_spec
MONTE num_steps F frequency

Where

device_name Name of device to be swept. The following components may be


swept:
Capacitors, all controlled sources, fixed current source, fixed
voltage source, inductors and resistors.
param_name Name of parameter used in expression. Expressions may be
used to define an instance or model parameter and may also be
used in arbitrary sources.
model Name of model containing parameter to be swept
mod_param_name Name of model parameter
num_steps Number of steps to be performed for Monte Carlo sweep.
frequency Specified frequency for which .NOISE, .AC and .TF analyses

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are to be performed. May be zero for .AC and .TF.


step_spec:
One of the following:

STP start stop step


LIN num_points start stop
DEC num_points_decade start stop
OCT num_points_octave start stop
LIST val1 [ val2 ... ]

Where:

start First value


stop Last value (inclusive)
step Interval
num_points Total number of points
num_points_decade Number of points per decade
num_points_octave Number of points per octave
STP and LIN modes are both linear sweeps but specified differently. STP specifies
start, stop and a step size, while LIN specifies start, stop and the total number of points.

Multi Step Analyses


Overview
The sweep specification described in “General Sweep Specification” on page 187 can
also be applied to define multiple analyses including Monte Carlo analysis. This can be
applied to the swept modes .DC, .AC, .NOISE and .TF along with .TRAN. The
analyses .SENS, .PZ and .OP cannot be run in multi-step mode. A multi-step .OP is in
fact the same as .DC so this is not required. Monte Carlo analysis is the subject of its
own chapter (see page 246) but it is invoked in the same way as other multi-step
modes. As well as the standard 6 sweep modes, small-signal multi-step analyses can be
run in snapshot mode which uses snapshots created by a previous transient analysis.

Syntax
The general form is:

.analysis_name analysis_parameters SWEEP


+ [sweep_spec] | [SNAPSHOT STP snapstart snapstop snapstep]

Where:

.analysis_name Dot control for analysis

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analysis_parameters Specific parameters for that analysis


sweep_spec See “General Sweep Specification” on page 187
SNAPSHOT Use snapshots created by a previous transient analysis. For full
details, see “Snapshots” on page 243
snapstart Index of first snapshot. Snapshots are counted in the order in
which they are created. The first is 0. Use STP 0 0 0 to specify
all available snapshots.
snapstep Index of last snapshot
snapstep Snapshot interval (usually 1)

Examples

Run 10 Monte Carlo runs for 1mS transient analysis

.TRAN 1m SWEEP MONTE 10

Sweep V1 from 0 to 5 volts in 0.1V steps for 200us transient

.TRAN 200u SWEEP DEVICE V1 STP 0 5 0.1

AC sweep of voltage source V5 from -300mV to 300mV. Repeat 6 times for parameter
restail from 450 to 550.

.AC DEVICE=V5 LIN 100 -300m 300m F=100000


+ SWEEP PARAM=restail LIN 6 450 550

Run AC sweep using all available snapshots

.AC DEC 100k 10G SWEEP SNAPSHOT STP 0 0 0

.AC
.AC inner_sweep_spec [ F frequency ] [ SWEEP outer_sweep_spec ]

Spice compatible frequency sweep:


.AC DEC|LIN|OCT num_points start stop

Instructs the simulator to perform a swept small signal AC analysis. SIMetrix AC


analysis is not limited to a frequency sweep as it is with generic SPICE and
derivatives. See “General Sweep Specification” on page 187 and examples below for
more details.

frequency Frequency at which analysis will be performed for non-


frequency sweeps. Default 0.
inner_sweep_spec See “General Sweep Specification” on page 187 for syntax.
Defines sweep mode. FREQ keyword is optional.
outer_sweep_spec If specified, analysis will be repeated according to this

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specification. See “General Sweep Specification” on page 187


for syntax.
num_points LIN: total number of points
DEC: number of points per decade
OCT: number of points per octave
start Start frequency for SPICE compatible mode
stop Stop frequency for SPICE compatible mode
Except for frequency sweep, the frequency at which the analysis is being performed
should be specified. If omitted, the frequency will be assumed to be zero.

For non-frequency sweeps, a new dc operating point may be calculated at each step
depending on what is being swept. If a capacitor, inductor or an ‘AC only’ model
parameter is being swept, then no new dc operating point will be required. Otherwise
one will be performed. An ‘AC only’ parameter is one that does not affect DC
operating point such as device capacitance.

Notes

An AC analysis calculates the small signal frequency response of the circuit about the
dc operating point. The latter is automatically calculated prior to commencing the
frequency sweep. One or more inputs may be specified for AC analysis by using
voltage or current sources with the AC specification (See “Voltage Source” on
page 114). The results of an AC analysis are always complex.

Examples

SPICE compatible. Sweep frequency from 1kHz to 1Meg

.AC DEC 25 1k 1MEG

Sweep voltage source V1 100 points from -100mV to 100mV. Frequency = 100kHz

.AC DEVICE V1 LIN 100 -100m 100m F=100k

Sweep parameter Rscale from 0.5 to 3 in steps of 0.1. Frequency=20Meg

.AC PARAM Rscale STP 0.5 3 0.1 F=20Meg

Sweep resistor R1 with values 10k 12k 15k 18k 22k 27k 33k, Frequency =1.1KHz

.AC DEVICE R1 LIST 10k 12k 15k 18k 22k 27k 33k F=1.1K

Monte Carlo sweep 100 steps. Frequency = 10K.


This is useful if - say - you are interested in the gain of an amplifier at one frequency
and it needs to lie within a defined tolerance. Previously you would need to repeat an
AC sweep at a single frequency to achieve this which could take a long time especially
if the circuit has a difficult to find operating point. The analysis defined by the
following line will take very little time even for a large circuit.

.AC MONTE 100 F=10K

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Examples of Nested Sweeps

As Monte Carlo above but repeated from 0 to 100C

.AC MONTE 100 F=10K SWEEP TEMP STP 0 100 10

... and at a number of frequencies

.AC MONTE 100 SWEEP FREQ DEC 5 1k 100k

.ALIAS
.ALIAS alias_name device_name device_type

This control may only be used in device model library files. It is not recognised by the
simulator. It permits a device model or subcircuit to be referenced by a different name.
This allows one model definition to be used for multiple part numbers.

alias_name Alias name


device_name Device to which alias refers
device_type Type of device to which alias refers. Must be one of the
following
C, D, LTRA, NJF, NMF, NMOS, NPN, PJF, PMF, PMOS, PNP,
R, SW or SUBCKT.
see “.MODEL” on page 207 for more details.

Example
.MODEL BC547C NPN
+ IS=7.59E-15 VAF=19.3 BF=500 IKF=0.0710 NE=1.3808
+ ISE=7.477E-15 IKR=0.03 ISC=2.00E-13 NC=1.2 NR=1 BR=5
+ RC=0.75 CJC=6.33E-12 FC=0.5 MJC=0.33 VJC=0.65
+ CJE=1.25E-11 MJE=0.55 VJE=0.65 TF=4.12E-10 ITF=0.4 VTF=3
+ XTF=12.5 RB=172 IRB=0.000034 RBM=65

.ALIAS BC549C BC547C NPN

The above would provide identical definitions for both BC547C and BC549C bipolar
transistors.

Notes .ALIAS definitions will recognise models defined in other files provided
the file in which the alias resides and the file in which the model definition
resides are part of the same library specification. A library specification is a
single pathname possibly with a wildcard ('?' or '*') to refer to multiple
files. E.g. \simetrix\models\*.mod is a library specification and refers to all
files with the extension '.mod' in the directory \simetrix\models.

Aliases must refer directly to a model or subcircuit definition and not to


other aliases.

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.DC
.DC inner_sweep_spec [ SWEEP outer_sweep_spec ]

Spice compatible:
.DC device_name start stop step

The remainder are SIMetrix 2.5 - 3.1 compatible:


.DC TEMP start stop step
.DC PARAM param_name start stop step
.DC MODEL model [PARAM] mod_param_name start stop step

Instructs simulator to perform a DC sweep analysis. A dc analysis performs a dc


operating point analysis for a range of values according to the sweep specification.
SIMetrix DC analysis is not limited to sweeping a voltage or current source as with
generic SPICE. Any mode defined by the general sweep specification (page 187) may
be used although frequency sweep has no useful purpose.

inner_sweep_spec See “General Sweep Specification” on


page 187 for syntax. Defines sweep mode.
DEVICE keyword is optional.
outer_sweep_spec If specified, analysis will be repeated
according to this specification. See “Multi Step
Analyses” on page 189 for details.
device_name Component reference of voltage source,
current source, resistor or controlled source to
be swept. (Only voltage and current sources are
SPICE compatible)
start Start value for sweep
stop Stop value for sweep
step Increment at each point
param_name Parameter name. This would be used in an
expression to define a component or model
value.
model_name Model name e.g. Q2N2222
model_parameter_name Model parameter name e.g. IS
If start is arithmetically greater than stop then step must be negative.

It is not necessary to declare parameters with .PARAM if using parameter sweep.

Examples

SPICE compatible. Sweep V1 from 0 to 5 volts in steps of 0.1 volt

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.DC V1 0 5 0.1

SIMetrix 3.1 compatible temperature sweep

.DC TEMP 0 100 2

Decade (i.e. logarithmic) sweep. Sweep V1 from 1mV to 1V with 25 points per decade

.DC V1 DEC 25 1m 1v

Note that the DEVICE keyword has been omitted. This is the default sweep mode for
.DC.

Do 1000 Monte Carlo steps. This performs the same task as a Monte Carlo analysis
applied to a DC operating point. In other products and earlier versions of SIMetrix this
task would take a long time as the operating point is solved from scratch each time.
With the mode described by the following example, the operating point need only be
calculated from scratch once. All subsequent steps are seeded by the previous one and
usually require only a few iterations. The end result is a sometimes spectacular
increase in speed.

.DC MONTE 1000

Examples of Nested Sweeps


Decade sweep at temperatures 0 to 100 in steps of 10

.DC V1 DEC 25 1m 1v SWEEP TEMP STP 0 100 10

Note the STP keyword is necessary to signify the start-stop-step method of defining a
linear sweep. Alternatively LIN can be used which defines the sweep in terms of the
total number of points. The following is equivalent to the above:

.DC V1 DEC 25 1m 1v SWEEP TEMP LIN 11 0 100

Do 100 run Monte Carlo analysis for temperature sweep

.DC TEMP 0 100 2 SWEEP MONTE 100

.FILE and .ENDF


.FILE filename
file_contents
.ENDF

The .FILE control allows the contents of a file referenced in a .MODEL control to be
placed directly in the netlist. Files are referenced in arbitrary logic blocks (page 281),
PWLFILE voltage and current sources (page 117), digital sources (page 140) and
digital state machines (page 162). Each of these may refer to files defined using .FILE
and .ENDF.

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Example
.MODEL COUNT_8 d_logic_block file=counter_def

.FILE counter_def
PORT (DELAY = 10n) CountOut out[0:7] ;

EDGE (DELAY=5n, WIDTH=8, CLOCK=in[0]) Count ;

Count = Count + 1 ;

CountOut = count ;
.ENDF

The .MODEL control refers to a file called ‘counter_def’. This could be a real disk file
called counter_def or counter_def.ldf, but in the above example it is instead defined
directly in the netlist using .FILE and .ENDF

Important Note
.FILE and .ENDF will not be recognised in library files.

.FUNC
.FUNC name ( arglist ) { body }

name Name of function. Must begin with a letter and not match one of
the built in functions.
arglist List of comma separated argument names
body Body of function. This is an expression referring to the names in
arglist that defines the operation performed by the function
.FUNC defines a function that can be used in a model or device parameter expression,
a parameter defined using .PARAM or in an arbitrary source expression.

Examples
.FUNC FREQ(V) { (V)*120K }
.FUNC SWEEP(V) { SIN(TIME*FREQ(v)*2*PI) }

Optimiser
Any expression that uses a function defined with .FUNC will be automatically
processed by an optimisation algorithm. For more information see “Optimisation” on
page 39

The optimiser attempts to speed simulations by making the expression evaluation


more efficient. The optimiser is effective when .FUNC is used to create very complex
expressions perhaps to develop a semiconductor device. In simple applications it may
not make a noticeable improvement to performance. The optimiser can be enabled for
all expressions and can also be disabled completely. To enable for all expressions use:

.OPTIONS optimise=2

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To disable:
.OPTIONS optimise=0

.GLOBAL
.GLOBAL node [ node... ]

Identifies nodes as global. This allows nodes specified at the top level of a circuit to be
accessed within a subcircuit definition. For more information see “Subcircuits” on
page 40.

.GRAPH
Parameters
.GRAPH signal_name|"expression"
+ [ persistence = persistence ]
+ [ axisname = axisname ]
+ [ graphname = graphname ]
+ [ axistype = digital|grid|axis|auto ]
+ [ curvelabel = curvelabel ]
+ [ xlabel = xlabel ]
+ [ ylabel = ylabel ]
+ [ xunit = xunit ]
+ [ yunit = yunit ]
+ [ xmin = xmin ]
+ [ ymin = ymin ]
+ [ xmax = xmax ]
+ [ ymax = ymax ]
+ [ analysis = analyses_list ]
+ [ ylog = lin|log|auto ]
+ [ xlog = lin|log|auto ]
+ [ nowarn = true|false ]
+ [ initXLims = true|false]
+ [ complete = true|false ]
+ [ order = order ]
+ [ colour = colour ]

.GRAPH instructs SIMetrix to plot a graph of the specified signal or expression. The
graph can be plotted incrementally as the simulation proceeds or may be delayed until
the run is complete.

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Chapter 6 Command Reference

Parameter Type Description


name

signal_name | string Specifies item to be plotted. If this is an


expression expression, then it must be enclosed in double
quotation marks or curly braces.
persistence integer Number of curves to be displayed at once. On
repeated runs, any curves from earlier runs
remain until the number of curves exceeds this
value at which point the oldest is deleted
automatically. If this parameter is absent or
zero, the curves are never deleted.
graphname string If specified, the curves will be directed to their
own graph sheet within the current window.
The value of graphname is arbitrary and is
used to identify the graph so that multiple
.graph controls can specify the same one. It
works in a similar way to axisname an example
of which is given below. This name is not used
as a label for display purposes but simply as a
means of identification.

axistype string Can be one of four values to specify type of y-


axis:
• DIGITAL. Use a digital axis. This is a
small axis that carries only one
curve. It is intended for digital
signals but may also carry analog
curves.
• GRID. Use a separate grid stacked
on top of the main one. The
AXISNAME parameter may be used
to identify a particular grid used by
another .GRAPH control.
• AXIS. Use a separate y-axis
alongside the main one. The
AXISNAME parameter may be used
to identify a particular axis used by
another .GRAPH control.
• AUTO. This is the default value. A
suitable axis is chosen
automatically.

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Parameter Type Description


name

axisname string This is only used if AXISTYPE is specified.


The value of AXISNAME is arbitrary and is
used to identify the axis so that multiple .graph
controls can specify the same one. An
example of this is given below. This name is
not used as a label for display purposes but
simply as a means of identification. Axes can
be labelled using ylabel and xlabel.
curvelabel string Label for curve displayed in graph legend. If
omitted, the label will be the signal name or
expression.
xlabel string Label for x-axis. Default is reference of curve
being plotted (E.g. time, frequency etc.)
ylabel string Label for y-axis. If there is only a single curve,
this will default to the label for the curve
otherwise the default is blank.
xunit string Units for x-axis. Default is units of reference.
yunit string Units for y-axis. Default is units of curves
plotted provided they are all the same. If any
conflict, the default will be blank
xmin real Minimum limit for x-axis. Must be used with
xmax.
xmax real Maximum limit for x-axis. Must be used with
xmin.
ymin real Minimum limit for y-axis. Must be used with
ymax.
ymax real Maximum limit for y-axis. Must be used with
ymin.
analysis string Specifies for what analysis modes the plot
should be enabled. By default it will be enabled
for all analysis modes. Any combination of the
following strings, separated by a pipe ('|')
symbol.
• TRAN. Transient analysis
• AC. AC analysis
• DC. DC sweep analysis
• NOISE. Noise analysis
• POP. POP analysis - SIMPLIS only

Other analysis modes do not produce results


that can be probed

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Chapter 6 Command Reference

Parameter Type Description


name

ylog string One of three values

LIN Use linear axis


LOG Use log axis
AUTO Axis will be log if x values are log
spaced. (E.g for decade AC sweep)
and all values are positive.
Default if omitted: LIN
xlog string One of three values

LIN Use linear axis


LOG Use log axis
AUTO Axis will be log if x values are log
spaced. (E.g for decade AC sweep)
and all values are positive.
Default if omitted: AUTO
nowarn Boolean If true, no warnings are given if an attempt is
made to plot a non-existent signal. Default:
false.
initXLims Boolean When this is TRUE, the x-axis limits are
initialised according to the analysis. E.g. if the
analysis is transient and runs from 0 to 1mS,
the x-axis will start with these limits. If set to
FALSE, the x-axis limits are calculated to fit the
curve and updated incrementally. You should
set this to FALSE if you are plotting an
expression whose x values are not the same
as the x values for the analysis e.g. using the
XY() function for an X-Y plot.

The default value of this option is usually true


but can be changed using the option
NoInitXAxisLimits . Type at the command line:
“Set NoInitXAxisLimits” to change default to
false.
complete Boolean If true, the plot is not produced until the
analysis is completed. Otherwise the plot is
updated at a rate determined by the global
option ProbeUpdatePeriod. This is forced for
some types of plot as certain expressions
cannot be plotted incrementally.

This can be set using the options dialog box


(File|Options|General…). Default: false.

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Parameter Type Description


name

order string Arbitrary string used to control the display


order of digital traces. Digital traces are
displayed in an order that is determined by the
alphanumeric sort order of the order value. If
omitted, the curvelabel value is used instead.
colour string Number representing an RGB value of the
colour of the final trace. The number, when
converted to hexadecimal, is in the form:

bbggrr

where bb is the blue value, gg is the green


value and rr is the red value. So, 16711680 -
FF0000 in hexadecimal is deep blue.

The .GRAPH control is the underlying simulator mechanism used by the schematic's
fixed probes. See User's Manual for details.

.GRAPH supersedes the older and less flexible .TRACE (page 240). The latter is,
however, still supported and may sometimes be convenient for specifying multiple
signals on one line.

Using Multiple .GRAPH Controls


If specifying several .GRAPH controls to plot a number of curves on the same graph,
you should make sure that the various parameters are consistent. If for example, a
conflict arises if you specify xmin and xmax for two .GRAPHs that plot curves in the
same graph sheet, and the values for xmin and xmax are different for each. You can
specify xmin and ymin for just one of the .GRAPH controls or you can specify for all
and make sure they are all the same. The same applies to other non-Boolean
parameters i.e. ymin, ymax, xlabel, ylabel, xunits and yunits. The parameter
initXLims, however must be specified with the same value for all .GRAPH controls
specifying the same graph sheet.

Conflicting values of ylog and xlog are resolved by plotting the curves on separate
axes or graph sheets respectively.

Creating X-Y Plots


To create an X-Y plot, use the XY() function (See User's Manual or Script Reference
Manual for full details of available functions). You should also specify
"initXLims=false". E.g.

.GRAPH "XY( imag(vout), real(vout) )" initXLims=false


+ xlog=LIN complete=true

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Chapter 6 Command Reference

The above will create a Nyquist plot of the vector VOUT.

Using .GRAPH in Subcircuits


.GRAPH maybe used in a subcircuit in which case a plot will be produced for all
instances of that subcircuit. Note, however, that it will only work for single values and
not for expressions when inside a subcircuit. The value of the curveLabel parameter
will be prefixed with the instance name so that the displayed curves can be correctly
identified.

Using Expressions with .GRAPH


You can enter an expression as well as single vectors to be plotted. A problem arises
when plotting expressions incrementally that are regularly updated while the
simulation is running. SIMetrix versions prior to v5 could not incrementally evaluate
expressions, so each time the plot of an expression was updated, the expression had to
be recalculated from the beginning. This was inefficient and it has always been
recommended that the complete=true flag was added in these circumstance to inhibit
incremental plotting.

SIMetrix - from version 5 - now has the ability to incrementally evaluate some
expressions and there is no longer a recommendation to set complete=true. However,
certain expression cannot be incrementally evaluated and when such expressions are
entered, incremental plotting will automatically be disabled and the plot won't appear
until the run is complete.

A notable example of expressions that cannot be incrementally evaluated is anything


containing the phase() function. This is because the phase() function uses a state
machine to determine when the phase wraps from -180 to 180 and back. An offset is
then applied to make the phase plot continuous. Because of the state machine, it is
always necessary to evaluate this function from start to finish which makes
incremental evaluation difficult. An alternative is to use instead the arg() function. This
is the same as phase, but does not have the state machine and always gives an output
that lies between +/- 180 degrees.

Plotting Spectra with .GRAPH


You can use .GRAPH to create spectrum plots using FFTs or Fourier. However, FFT is
quite difficult to use on its own as it needs interpolated data. So, a new user defined
function called Spectrum() has been developed that is especially designed for use with
.GRAPH. Usage is:

Spectrum(vector, numPoints [, start [, stop]])


Where:

vector Vector or expression


numPoints FFT size - must be a binary power of 2
start Start time - default = 0
stop Stop time - default = end of data

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Spectrum() cannot be incrementally evaluated and so incremental plotting will


automatically be disabled for any .GRAPH control that uses it. See above “Using
Expressions with .GRAPH”.

Examples
.GRAPH C2_P curveLabel="Amplifier output" nowarn=true

Plots the vector C2_P and gives it the label ‘Amplifier output’. As NOWARN is
TRUE, no warning will be given if C2_P does not exist.

.GRAPH vout_quad
+ axisType="grid"
+ axisName="grid1"
+ persistence=2
+ curveLabel="Quadrature"
+ nowarn=true
+ analysis = TRAN|DC

.GRAPH vout
+ axisType="grid"
+ axisName="grid1"
+ persistence=2
+ curveLabel="In Phase"
+ yLabel="Filter Outputs"
+ nowarn=true
+ analysis = TRAN|DC

The above illustrates the use of the parameters AXISTYPE and AXISNAME. Both the
vectors specified by the above .GRAPH controls will be plotted on the same but
separate grid. Because both grids have been given the AXISNAME grid1, each curve
will be plotted on the same one. If the values of axisname for the above were different,
each curve would be plotted on a separate grid. The ANALYSIS parameter has been
specified in both cases, so plots will only be created for transient and dc sweep
analyses.

.IC
.IC V(node1)=val1 [ V(node2)=val2 ]...
OR

.IC node1 val1 [ node2 val2 ]

This control sets transient analysis initial conditions.

node1, node2 etc. Name of circuit node (or net) to which initial condition is to be
applied. See notes below.
val1, val2 etc. Voltage to be applied to net as initial condition.

If the UIC parameter is specified with the .TRAN control no DC operating point will
be calculated so an initial condition will set the bias point in the same way as an IC=...
parameter on a BJT, capacitor, diode, JFET or MOSFET.

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If the UIC parameter is absent from the .TRAN control then a DC operating point is
calculated before the transient analysis. In this case the net voltages specified on the
.IC control are forced to the desired initial values during the DC operating point
solution. Once transient analysis begins this constraint is released. By default the
voltage force is effectively carried out via a 1Ω resistor. This can be changed with the
option setting ICRES. (page 215).

Alternative Initial Condition Implementations


An initial condition can also be specified using a voltage source with the DCOP
parameter specified. E.g.

VIC1 2 3 3.5 DCOP

Will force a voltage of 3.5 volts between nodes 2 and 3 during the DC operating point
solution. This has two advantages over .IC:

1. It has zero force resistance


2. It can be applied differentially
You can also use a capacitor with the BRANCH parameter set to 1. E.g.:

C1 2 3 10u BRANCH=1 IC=3.5

This will behave identically to the voltage source in the above example during the DC
operating point but during a subsequent small-signal or transient analysis will present a
10µF capacitance to nodes 2 and 3.

See also: “Capacitor” on page 66 and “Voltage Source” on page 114.

.INC
.INC pathname

Insert the contents of the specified file.

pathname File system pathname for file to be included


The .INC control is replaced by the specified file in its entirety as if was part of the
original file. .INC controls may also be nested i.e. there may be .INC controls within
the included file. Nesting may be to any level.

.KEEP
.KEEP signal_spec [signal_spec ...]

This control tells the simulator what values to store during a simulation. By default, all
top level voltages and currents and digital data are stored.

signal_spec /TOP | /SUBS | /NOV | /NOI | /NODIG | *V | *I | *D | **V |


**I | **D | subref.*V | subref.*I | subref.*D | subref.**V |
subref.**I | subref.**D | ^wildcard_filter | signal_name

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subref Sub-circuit reference


/NOV Don't store top level (i.e. not in a subcircuit) voltages.
/NOI Don't store top level currents
/NODIG Don't store top level digital data.
/SUBS Store all subcircuit data.
/TOP Overrides /subs. This is to inhibit storing signals in child
schematics in hierarchical designs.
^wildcard_filter General specification that selects values to store based on their
name alone. Would usually use one of the special characters '*'
and '?'. '*' means ‘match one or more characters’ while '?' means
‘match a single character’. Some examples:
* matches anything
X1.* matches any signal name that starts with the
three letters: X1.
X?.* matches any name that starts with an X and
with a '.' for the third letter.
*.q10#c matches any name ending with q10#c.
*V Store all top level voltages. This is actually implicit and need
not be specified at the top level of the netlist. It can be usefully
used in sub-circuit definitions - see notes.
*I Store all top level currents. This is actually implicit and need not
be specified at the top level of the netlist. It can be usefully used
in sub-circuit definitions - see notes.
*D Store all top level digital data. This is actually implicit and need
not be specified at the top level of the netlist. It can be usefully
used in sub-circuit definitions - see notes.
**V Store all voltages including those inside sub-circuits descending
to all levels
**I Store all currents including those inside sub-circuits descending
to all levels
**D Store all digital data including those inside sub-circuits
descending to all levels
subref.*V Store all voltages within sub-circuit subref excluding voltages
within children of subref.
subref.*I Store all currents within sub-circuit subref excluding currents
within children of subref.
subref.*D Store all digital data within sub-circuit subref excluding digital
data within children of subref.
subref.**V Store all voltages within sub-circuit subref including voltages
within children of subref descending to all levels.

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subref.*I Store all currents within sub-circuit subref including currents


within children of subref descending to all levels.
subref.*D Store all digital data within sub-circuit subref including digital
data within children of subref descending to all levels.
signal_name Explicit voltage or current.
This control instructs the simulator what values to store during a simulation. By
default, all voltages and currents not within subcircuits are stored.

/SUBS Store all available voltages and currents including subcircuit


data. (Overrides /NOV and /NOI).
/NOV Don't store currents in voltage sources and inductors or any
voltages.
/NOI Don't store currents. (Except those in voltage sources and
inductors)
/TOP If present, overrides /SUBS.
signalname. Name of explicit signal (e.g. voltage or current) to store.

Notes

.KEEP may be used inside a sub-circuit definition in which case .KEEP operates at a
local level. For example .KEEP *v inside a sub-circuit definition specifies that all
voltages within that subcircuit (for all instances) will be saved. .KEEP **v does the
same but also includes any descendant sub-circuit instances.

In earlier versions, voltage also meant currents in voltage sources and inductors as
these values are obtained as part of the matrix solution. This is no longer the case,
voltage and current mean what they say.

Examples

Store only voltages and currents in sub-circuit X1 excluding descendants.

.KEEP /noi /nov /top X1.*v X1.*i

Store only voltages and currents in sub-circuit X1 including descendants.

.KEEP /noi /nov /top X1.**v X1.**i

Store voltages within U3.U12 along with VOUT and VIN

.KEEP /noi /nov /top U3.U12.*v VOUT VIN

Store all top level voltages and currents in U7

.KEEP /noi /top U7.*i

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.LIB
There are two forms of .LIB and the behaviour of each is completely different from
each other. The SIMetrix Native Form specifies a file or group of files to be searched
for any model or subcircuit that has not yet been found. The HSPICE version is a
selective version of .INC but unlike .INC it doesn't include the whole file, just a
specified portion of it.

SIMetrix Native Form


.LIB pathname

pathname File system path name specifying a single file or, by using a
wildcard (* or ?), a group of files. If the path name contains
spaces, it must be enclosed in quotation marks (").
The SIMetrix form of this control specifies a pathname to be searched for model and
subcircuit libraries. Any number of .LIB controls may be specified and wildcards (i.e.
* and ? ) may be used.

If a model or subcircuit is called up by a device line but that definition was not present
in the netlist, SIMetrix will search for it in files specified using the .LIB control.

SIMetrix will also search for definitions for unresolved parameters specified in
expressions. These are defined using .PARAM (see page 228).

Example

The following control instructs the simulator to search all files with the .mod extension
in c:\Spice Model Library\ for any required subcircuits or device models.

.lib "c:\Spice Model Library\*.mod"

HSPICE Form
.LIB 'filename' entryname

filename File system path name specifying a single file.


entryname Name used to identify sections within filename
When HSPICE the form of .LIB is encountered, SIMetrix will search the file
specified by filename for a section enclosed by:

.LIB entryname

and

.ENDL
.LIB calls may be nested as long as they are not recurrent. That is a .LIB call within a
.LIB .ENDL block may not call itself but it may call another block within the same
file. (HSPICE itself does not permit this).

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This form of .LIB is commonly used in model files issued by semiconductor


fabrication plants which tend to be designed for use with HSPICE. The entry name
parameter is used for process corner and skew selection. Typically the model file
would have entries for - say - slow, nominal and fast models. These would reside under
entry names of, perhaps, SS, NOM, and FF respectively. You can very rapidly switch
between these model sets simply by changing the entry name on the .LIB line e.g.

.LIB 'c:\models\fab1\process_a\[Link]' NOM

would select the nominal models. Changing to:

.LIB 'c:\models\fab1\process_a\[Link]' SS

would switch to the slow models.

.MODEL
.MODEL modelname modeltype ( param1=val1 [ param2=val2 ]... )

This control specifies a set of model parameters that are used by one or more devices.
.model controls often reside in model libraries.

modelname Model name. Any text string to uniquely identify model. Must
begin with a letter but may contain any legal ASCII character
other than a space and period '.' .
modeltype Model type. See tables below for possible values
param1, param2 etc. Parameter name.
Valid values depend on the model type.
(See “Simulator Devices” on page 27)
val1, val2 etc. Parameter value.

XSPICE Model Types

Model name Description

ad_converter analog-to-digital converter


adc_bridge analog-to-digital interface bridge
adc_schmitt analog-to-digital schmitt trigger
cm_cap Capacitor with voltage initial condition
cm_ind Inductor with current initial condition
d_and digital n-input and gate
d_buffer digital one-bit-wide buffer
d_cap Digital capacitor
d_dff digital d-type flip flop

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Model name Description

d_dlatch digital d-type latch


d_fdiv digital frequency divider
d_init Digital initial condition
d_inverter digital one-bit-wide inverter
d_jkff digital jk-type flip flop
d_logic_block arbitrary logic block
d_nand digital n-input nand gate
d_nor digital n-input nor gate
d_open_c digital one-bit-wide open-collector
buffer
d_open_e digital one-bit-wide open-emitter buffer
d_or digital n-input or gate
d_osc controlled digital oscillator
d_pulldown digital pulldown resistor
d_pullup digital pullup resistor
d_pulse digital pulse
d_ram digital random-access memory
d_res Digital resistor
d_source digital signal source
d_srff digital set-reset flip flop
d_srlatch digital sr-type latch
d_state digital state machine
d_tff digital toggle flip flop
d_tristate digital one-bit-wide tristate buffer
d_xnor digital n-input xnor gate
d_xor digital n-input xor gate
da_converter digital-to-analog converter
dac_bridge digital-to-analog interface bridge
s_xfer s-domain transfer function block

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SPICE Model Types

Model name Description

C Capacitor
CORE Jiles-Atherton core model
CORENH Simple core model
D Diode
LTRA Lossy transmission line
NIGBT IGBT
NJF N-channel JFET
NMF N-channel GaAsFET
NMOS N-channel MOSFET
NPN NPN BJT (Bipolar junction transistor)
PJF P-channel JFET
PMF P-channel GaAsFET
PMOS P-channel MOSFET
PNP PNP BJT
R Resistor
SW Voltage controlled switch

Safe Operating Area (SOA) Limits

It is possible to define SOA limits within the .MODEL statement. To do this, add one
or more parameters in the following format:

LIMIT(name)=(min, max, xwindow)


name Name of quantity to test. See format for access variables useable
when MODEL is specified for a .SETSOA control. This is
described in section: “.SETSOA” on page 233. E.g. use
‘LIMIT(vcb)’ to specify the limits for the collector-base voltage
of a BJT.
min, max As described in “.SETSOA” on page 233
xwindow As described in “.SETSOA” on page 233

Example

The following is a model for a 1N5404 diode.

.MODEL D1n5404 D(Is=15.48f Rs=7.932m Ikf=0 N=1 Xti=3

+ Eg=1.11 Cjo=150p M=.3 Vj=.75 Fc=.5

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+ Isr=120n Nr=2 Bv=525 Ibv=100u)

.NODESET
.NODESET V(node1)=val1 [ V(node2)=val2 ]...
OR
.NODESET node1 val1 [ node2 val2 ]

This control sets an initial guess voltage at the specified node for the dc operating point
solution.

node1, node2 etc. Name of circuit node (or net) to which nodeset is to be applied.
See notes below.
val1, val2 etc. Nodeset voltage to be applied.

Initially nodesets work exactly the same way as initial conditions. The nodeset voltage
is applied via a 1 Ohm (by default but can be changed using NODESETRES option -
see page 215) resistor and the solution is completed to convergence (by any of the
methods). The nodeset is then released and the solution repeated. If the nodeset voltage
is close to the actual solution the convergence of the second solution should be rapid.

Nodesets can be used to force a particular solution for circuits that have more than one
stable state. Consider the following circuit:

5V
V1
1K 1K
R1 R2

4.60195 0.0646829
10k 10k

R5 R6 .nodeset
0

Q2 Q1
Q2N2222 Q2N2222

100k 100k
R3 R4

A nodeset has been applied to the collector of Q1. This has forced Q1 to be on and Q2
to be off. If the nodeset were absent the solution would actually leave both Q1 and Q2
partially on. In real life this would not be stable but it is numerically accurate.

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The other application of nodesets is to help convergence for the DC bias point. With
SIMetrix, it is rarely necessary to use nodeset's to find the DC solution of a circuit.
They can, however, be useful for speeding up the operating point analysis for circuits
that have already been solved. You may wish to do this for a Monte-Carlo analysis, for
example. SIMetrix features a method of creating nodesets for this purpose using the
SaveRhs command. See “Using Nodesets” on page 260.

Nodeset's should not be confused with initial conditions. (see “.IC” on page 202).
Initial conditions tie a node to a particular voltage and keep it there throughout the DC
operating point analysis. Nodesets merely suggest a possible solution but do not force
it.

.NOISE
.NOISE inner_sweep_spec [ V ] pos_node [ VN ] neg_node
+ [[ INSRC ] in_source ]
+ [ F frequency ] [SWEEP outer_sweep_spec]

Spice Compatible
.NOISE V(pos_node [, neg_out_node ]) in_source
+ DEC|LIN|OCT num_points start stop interval

This control instructs the simulator to perform a small signal noise analysis.

pos_node Node on circuit at which noise is measured.


neg_node Node to which outputnode is referenced. Defaults to ground if
omitted.
in_source Input source (i.e. voltage or current) to which the input noise
measurement is referred.
inner_sweep_spec See “General Sweep Specification” on page 187 for syntax.
Defines sweep mode. FREQ keyword is optional.
outer_sweep_spec If specified, analysis will be repeated according to this
specification. See “General Sweep Specification” on page 187
for syntax.
LIN Analysis points are linearly spaced.
DEC Analysis points are logarithmically spaced in decades
OCT Analysis points are logarithmically spaced in octaves
num_points LIN: Total number of points
DEC: Number of points per decade
OCT: Number of points per octave
start Start frequency
stop Stop frequency
interval Currently does nothing. Provided for backward compatibility.

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Notes

During noise analysis the simulator calculates the total noise measured between
pos_node and neg_node at each frequency point. It also calculates and outputs this
noise referred back to an input specified by in_source. As for all other analysis modes
a DC operating point analysis is carried out first but, unlike AC analysis, the results of
this analysis are not made available. The simulator outputs vectors covering the
contribution from each noise generating device to the total output noise. The names of
these vectors begin with the component reference of the device followed by a suffix to
indicate the source of the noise within the device. A listing of the suffixes is given
below. It is important to note that it is not the noise being generated by each device that
is output but the proportion of that noise that is propagated to the output.

It is not necessary to specify a separate AC analysis alongside the noise analysis as it is


with SPICE2 and commercial derivatives of SPICE2.

The magnitude of any AC independent voltage or current source on the circuit has no
effect on the results of a noise analysis. Unlike SPICE and earlier versions of SIMetrix,
it is not necessary to specify an AC parameter for the source used for the noise input
source. For the first form shown above, the input source is in fact optional. If it is
omitted the input referred noise will not be calculated.

All noise results are in V/√Hz except input noise referred back to a current source
which is in A/√Hz. In standard SPICE3 the noise values produced for MOS2 and
BSIM3 devices are in V2/Hz. For consistency, these have now been changed to V/√Hz.
The original SPICE3 behaviour can be restored by setting the simulator option
OldMosNoise (see “.OPTIONS” on page 215)

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Device vector name suffixes

Device Type Suffix and Description

BJT #rc Noise due to collector resistance


#rb Noise due to base resistance
#re Noise due to emitter resistance
#ic Shot noise in collector
#ib Shot noise in base
#1overf Flicker (1/f) noise
no suffix Total transistor noise
Diode #rs Noise due to series resistance
#id Shot noise
#1overf Flicker (1/f) noise
no suffix Total diode noise
JFET and MOSFETs level 1-3 #rd Noise due to drain resistance
and BSIM3 #rs Noise due to source resistance
#id Shot noise in drain
#1overf Flicker (1/f) noise
no suffix Total FET noise
Philips MOS9 (all types see #Sfl Flicker (1/f) noise
“Philips Compact Models” on #Sth Drain thermal noise
page 123) #Sig Gate thermal noise
#Sigth Gate-drain correlated thermal noise
no suffix Total FET noise
Resistor #therm Resistor thermal noise
#1overf Flicker (1/f) noise
#noise Total resistor noise
Voltage controlled switch no suffix Total switch noise

Creating Noise Info File


Noise analysis generates vectors in the same way as all other swept analyses.
Individual vectors may also be tabulated in the list file using the .PRINT control.

A noise output file may also be created from the front end. Select the command shell
menu Graphs and Data|Create Noise Output File to create a text file with a summary of
noise results. Included is a list of the integrated noise output for every device listed in
order of magnitude. Select Graphs and Data|View Noise Output File to view the file.
Note that this is a front end feature and is not implemented by the simulator.

Examples

Run noise analysis from 100Hz to 1MHz with 25 points per decade. Calculate noise at
node named vout and noise referred back to voltage source vin:

.NOISE V( vout ) vin dec 25 100 1meg

Decade sweep resistor RSource from 100 to 10K with 25 points per decade. Frequency
= 1kHz

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.NOISE DEVICE RSource DEC 25 100 10k F=1K

.OP
.OP

This control instructs the simulator to perform a DC operating point analysis. Note that
a DC operating point analysis is carried out automatically for transient (unless the UIC
parameter is specified), AC, DC, transfer function and noise analyses.

DC operating point analysis attempts to find a stable bias point for the circuit. It does
this by first applying an initial guess and then uses an iterative algorithm to converge
on a solution. If it fails to find a solution by this method the simulator then attempts
three further strategies.

For the first, a method known as ‘source stepping’ is employed. For this all voltage and
current sources in the circuit are initially set to near zero and the solution found. The
sources are then gradually increased until they reach their final value.

If this approach fails a second strategy ‘GMIN stepping’ is invoked. This conditions
the solution matrix by increasing the diagonal term such that it is dominant. If large
enough, convergence is virtually guaranteed. If successful then the diagonal term is
reduced and a further solution sought using the previous solution as a starting point.
This procedure is repeated until the diagonal term is returned to its correct value.
Increasing the diagonal term is in a way similar, but by no means identical, to placing a
small resistance at each node of the circuit.

If source stepping fails a final strategy, ‘pseudo transient analysis’ is invoked. This is
the most powerful technique employed and nearly always succeeds. However, it is also
the slowest which is why it is left until last. For more information on DC convergence
see “Convergence and Accuracy” on page 256.

If the final approach fails then the analysis will abort.

IMPORTANT: It is not necessary to include .OP if other analyses are specified. All
other analysis modes will perform an operating point anyway so including .OP will
simply cause it to be done twice. However, with .NOISE, .TF, .SENS and .PZ the
results of the operating point analysis are not output. If the bias point of the circuit is
required when running one of these analysis modes, a .OP will be needed.

‘OFF’ Parameters

Some semiconductor devices feature the device parameter OFF. If there are devices in
the circuit which specify this parameter, the bias point solution is found in two stages.
In stage 1 the devices with OFF specified are treated as if their output terminals are
open circuit and the operating point algorithm completes to convergence. In stage 2,
The OFF state is then released and the solution restarted but initialised with the results
of stage 1.

The result of this procedure is that OFF devices that are part of latching circuits are
induced to be in the OFF state. Note that the OFF parameter only affects circuits that
have more than one possible DC solution such as bistables. If the OFF parameter is

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Chapter 6 Command Reference

specified in - say - an amplifier circuit - with a unique solution, the final result will be
the same. It will just take a little longer to arrive at it.

Nodesets

Nodesets work in a similar way to the OFF parameter in that the solution is found in
two stages. In the first the nodeset is applied and the solution found. It is then released
and convergence continues. Nodeset are an aid to convergence and, like the OFF
parameter, can coerce a particular solution if there is more than 1 stable state. See
“.NODESET” on page 210 for details

Initial Conditions

Initial conditions force a particular voltage at a circuit node during bias point solution.
The force is released for any subsequent analysis. See “.IC” on page 202 for more
details.

Operating Point Output Info


During the operating point analysis, operating point values of every device in the
circuit are output to the list file (see page 23). This information is not usually output for
other analysis modes unless explicitly requested. The output of operating point
information is controlled by three simulator options:

NOOPINFO If set, the operating point info file is not created for .OP analysis
OPINFO If set, the operating point info file is created for other analyses
as well as .OP. (Does not apply to .SENS - operating point
information is not available for this mode at all)
OPINFOFILE Sets name of file to receive operating point info. Outputs to list
file if this option is not specified.

.OPTIONS
.OPTIONS [ opt1 [=val1]] ...

This control allows the setting of various options specific to the simulator.

opt1 Option name. Must be one specified in list below.


val1 Option value. Note, boolean options do not have a value. They
are assigned “true” if the name is present and “false” if not

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List of simulator options

Option name Default Description


value

ABSTOL 1p Units = A
The absolute current error tolerance. It
is sometimes desirable to increase this
for circuits that carry large currents
(>1A) to speed the solution and aid
convergence.
ABSTOLMAX 1µ Units = A
ABSTOL selectively relaxed to this
value if needed to allow transient
analysis to continue.
ACCT false Full simulation timing statistics are
generated if this is enabled.
ALLACI false Instructs simulator to save all device
currents in an AC analysis. Usually,
only currents for simple devices are
evaluated and stored. Equivalent to
“.KEEP /allaci”, but unlike .KEEP,
.OPTION values can be defined on the
Run command line.
ANYVERSION false If true, BSIM3 and BSIM4 models will
be unconditionally accepted even if an
invalid version parameter is supplied.
BINDIAG false If enabled, a report about selection of
binned models will be output to the list
file. See “Model Binning” on page 44
BINONTOTALWIDTH false For backward compatibility affecting
BSIM4 models. Multi-fingered BSIM4
devices are binned according to width
per finger. SIMetrix versions 5.3 and
earlier binned according to total width.
Set this option for version 5.3
behaviour.
CHGTOL 1e-14 Units = Coulombs
The absolute charge tolerance.
DCOPSEQUENCE gmin| Operating point strategy sequence
source| order. See “Controlling DC Method
pta Sequence” on page 265 for details
DEFAD 0 Unit = m2
Default value for MOSFET AD device
parameter. Applies to levels 1-3 and
level 49/53. Does not apply to level 8
or Philips MOS9 devices

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Chapter 6 Command Reference

Option name Default Description


value

DEFAS 0 Unit = m2
As DEFAD but for AS parameter
DEFL 100µ Unit = metres
As DEFAD but for L parameter
DEFNRD 0 As DEFAD but for NRD parameter
DEFNRS 0 As DEFAD but for NRS parameter
DEFPD 0 Unit = metres
As DEFAD but for PD parameter
DEFPS 0 Unit = metres
As DEFAD but for PS parameter
DEFW 100µ Unit = metres
As DEFAD but for W parameter
DEVACCT false If true, the simulator will measure load
times for each device type during a
simulator run. This information can be
obtained using the GetDeviceStats()
script function.
DIGMINTIME 1pS Unit = Seconds
Minimum digital resolution. Not yet
fully supported
DISABLESUBCKTMULTIPLIER false If true, the subcircuit multiplier
parameter, M, will be disabled. See
“Subcircuit Instance” on page 110
EXPAND false The netlist with subcircuits expanded
is output to the list file if this is
specified.
EXPANDFILE Only applies if EXPAND also
specified. Specifies a file instead of the
list file to receive the expanded netlist
FASTPOINTTOL 1.0 Value for POINTTOL used during ‘Fast
transient start’. See POINTTOL below.
FASTRELTOL 0.001 Value for RELTOL used during ‘Fast
transient start’
FLUXTOL 1e-11 Unit = [Link]
The absolute flux tolerance for
inductors.

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Option name Default Description


value

FORCETRANOPGROUP false Forces a separate data group to be


created for transient analysis
operating point data. This happens
anyway if tstart>0. Use this option
when simulating a large circuit and
you wish to make extensive use of
schematic bias annotation. See User’s
Manual Chapter 9 “Viewing DC
Operating Point Results” for more
details
FULLEVENTREPORT false If true, the simulator will save all event
information. When false, only major
events are recorded. Events can be
obtained from the
GetSimulatorEvents() script function
and can be useful for diagnosing failed
runs.
GMIN 1e-12 Unit = Siemens (mhos)
The minimum conductance allowed by
the program. This has the effect of
placing a resistor = 1/GMIN in parallel
with every branch of the circuit.
GMINMAXITERS 1000 Maximum total number of iterations
allowed for GMIN stepping operating
point algorithm. See “Source and
GMIN Stepping” on page 257 for
details.
GMINMULT 10 During GMIN stepping the value of
GMIN is multiplied by a variable factor
at each step. This option is the starting
and maximum value of that factor.
GMINSTEPITERLIMIT 20 Iteration limit for each step in GMIN
stepping. Increase to 100 for
compatibility with SIMetrix 2.0x and
earlier.
ICRES 1 Unit = ICRES
Initial condition resistive force. See
“.IC” on page 202 for details
ITL1 100 DC iteration limit used for initial DC
operating point.
ITL2 50 DC iteration limit used for swept and
multi-step analyses.

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Option name Default Description


value

ITL4 10 Normal transient timepoint iteration


limit. The behaviour of this parameter
is slightly different in SIMetrix than
other SPICE based simulators. See
“Convergence and Accuracy” on
page 256
ITL7 40 Upper transient timepoint iteration
limit. This is specific to SIMetrix.
LOGICHIGH 2.2 Unit = Volts
Upper threshold for logic inputs. Other
comments as for LogicThreshHigh
LOGICLOW 2.1 Unit = Volts
Lower threshold for logic inputs. Other
comments as for LogicThreshHigh
LOGICTHRESHHIGH 5 Unit = Volts
Output voltage for logic high level.
Used for & | and ~ operators for
arbitrary source. See “Arbitrary
Source” on page 52 for more details
LOGICTHRESHLOW 0 Unit = Volts
Output voltage for logic low level.
Other comments as for
LogicThreshHigh
LOGPARAMEXPRESSIONS false If true, a log of parameter expressions
in use will be output to the list file
MATCHEDSUBCIRCUITS false If set, components within subcircuits
are treated as matched for Monte
Carlo analysis. See “Monte Carlo
Analysis” on page 246 .
MAXEVTITER 0 (sets Maximum number of event driven
internal passes allowed at each step. It is not
default) usually necessary to change this
value.
MAXOPALTER 0 (sets Maximum number of alternations
internal between analog and event-driven
default) iterations. It is not usually necessary to
change this value
MAXORD 2 Maximum integration order. For
METHOD=TRAP maximum value is 2.
For METHOD=GEAR maximum value
is 6. There is rarely any reason to
change this value.

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Option name Default Description


value

MAXVDELTAABS 0.5 with MAXVDELTAREL, sets a limit on


the amount of change per timestep for
each node. Inactive if
MAXVDELTAREL less than or equal to
zero. See “Voltage Delta Limit” on
page 269 for further details
MAXVDELTAREL 0.0 See MAXVDELTAABS above.
MC_ABSOLUTE_RECT false If set Monte Carlo distribution will be
rectangular for absolute tolerances.
Otherwise the distribution will be
Gaussian.
MC_MATCH_RECT false If set Monte Carlo distribution will be
rectangular for matched tolerances.
Otherwise the distribution will be
Gaussian.
MCLOGFILE [Link] File name to receive Monte Carlo log.
See “Log File” on page 247
METHOD trap Numerical integration method. Either
TRAP (default) or GEAR". More info:
See “Integration Methods - METHOD
option” on page 270
MINBREAK See notes Unit = Seconds
Minimum time between transient
analysis breakpoints. A breakpoint is a
point in time when an analysis is
forced regardless of whether it is
required by the timestep selection
algorithm. Typically they are set at
known turning points such as the start
and end of a rising pulse. If two
breakpoints are closer than
MINBREAK they are merged into one.
(there are exceptions to this e.g if the
two breakpoints were generated by a
single rising edge). Increasing
MINBREAK can sometimes help
convergence and simulation speed.
The default value is
MINTIMESTEP*100. (See below for
MINTIMESTEP)

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Option name Default Description


value

MINGMINMULTIPLIER 1.000001 In GMIN stepping, the step size is


multiplied by variable factor at each
step. This step is reduced if
convergence fails. If it is reduced
below this value, the GMIN algorithm
will abort and the next DC operating
point strategy will be invoked.
MINTIMESTEP 1e-9 * Max Unit = Seconds
time step Minimum transient time step.
Simulation will abort if it reaches this
value. See “.TRAN” on page 241 for
value of Max time step
MOSGMIN GMIN Value of GMIN used between drain
and source of MOSFETs. See
“MOSFET GMIN Implementation” on
page 97
NEWGMIN false Changes the implementation of GMIN
for ‘old’ MOS devices i.e. LEVELs 1-3.
When this option is set, GMIN is
implemented as a conductance
between source and drain. Otherwise
two conductances are added between
drain and bulk and source and bulk.
See “MOSFET GMIN Implementation”
on page 97
NOCUR false Equivalent to “.KEEP /noi”. Inhibits the
saving of current data.
NODELIMIT 1e50 Unit = Volts
Maximum value allowed for circuit
node during iteration. If exceeded,
iteration will abort. (This does not
usually mean the analysis will abort).
Reducing this value can sometime
solve floating point exceptions or
unexplained singular matrices.
NODESETRES 1.0 Unit = Ohms
Driving resistance of nodeset force.
See “.NODESET” on page 210 for
details
NOECHO false Inhibits display of netlist in list file
NOMCLOG false If specified, no Monte Carlo log file will
be created. See“Log File” on page 247
for details
NOMOD false If specified, no model parameter report
will be output to the list file.

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Option name Default Description


value

NOMOS9GATENOISE false If specified, the drain induced gate


noise model for MOS9 devices will be
disabled. See “Philips Compact
Models” on page 123.
NOOPALTER false If specified, only a single pass will be
made to resolve the operating point for
event driven devices.
NOOPINFO false Switches off creation of operating
point info file for .OP analyses. See
“.OP” on page 214 for more details
NOOPITER false Use GMIN stepping for DC operating
point analysis first. (i.e skip normal
iteration method)
NORAW false Output transient analysis values at
intervals of tstep only. See “.TRAN” on
page 241
NOSENSFILE false Switches off creation of sensitivity
analysis data file.
NOWARNINGS false Inhibits simulation warnings
NOVOLT false Equivalent to “.KEEP /nov”. Inhibits
the saving of voltage data.
NUMDGT 10 Column width used for display of all
values in list file and Monte Carlo log
file. Minimum value is 8, maximum is
30. Note this value is column width not
the number of significant digits.
OLDLIMIT false If set SPICE 2 MOS limiting algorithm
is used. Affects MOS Level 1,2 and 3
as well as EKV devices
OLDMOSGMIN 0 Value of conductance placed between
drain-bulk and source-bulk for BSIM3,
BSIM4 and EKV devices. Also applies
to LEVEL 1-3 and LEVEL 17
MOSFETs if NEWGMIN parameter is
set. See “MOSFET GMIN
Implementation” on page 97
OLDMOSNOISE false MOS2 and BSIM3 devices return
device noise in V2/Hz for SPICE3 and
earlier versions of SIMetrix whereas
other device's noise is returned in V/
√Hz. From release 3 onwards all
devices return noise in V/√Hz. Setting
this option restores to behaviour of
earlier versions.
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Chapter 6 Command Reference

Option name Default Description


value

OPINFO false If set DC operating point info file is


created for all analyses (except
.SENS). Normally it is created only for
.OP analyses.
OPINFOFILE false Specify name of operating point info
file. This is [Link] by default.
OPTIMISE 1 Controls expression optimiser. 0=off,
1=on for .FUNC defined expressions,
2=on always. See “Optimisation” on
page 39
PARAMLOG Given Control amount of detail for parameter
log in list file.
Choices:
None: no parameters listed
Brief: only parameters specified
using an expression are
listed
Given parameters explicitly
specified in the netlist are
listed
Full all parameters are listed
PIVREL 1e-3 This affects the matrix solution and
rarely needs to be altered. Setting this
parameter to a high value e.g, 0.99
can sometimes fix convergence
problems but may slow down the
simulation. Valid values lie between 0
and 1.
PIVTOL 1e-13 This affects the matrix solution and
rarely needs to be altered. It is the
absolute minimum value for a matrix
entry to be accepted as a pivot.
Unexplained singular matrix errors can
sometimes be overcome by lowering
this value. (But note that singular
matrix errors are usually caused by
errors in the circuit such as floating
nodes or shorted voltage sources).

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Option name Default Description


value

POINTTOL 0.001 A factor used to control the extent to


which the maximum value attained by
a signal is used to control its tolerance.
This is new from release 4; set it to
zero for pre release 4 behaviour.
Increasing this value will speed up the
simulation at the expense of precision.
See “Accuracy and Integration
Methods” on page 266
PTAACCEPTAT 0 If > 0, specifies a time when pseudo
transient analysis results will be
accepted unconditionally. This is
useful when a circuit comes close to
convergence during pseudo transient,
but doesn’t quite make it due to an
oscillation. See “Pseudo Transient
Analysis” on page 258
PTACONFIG 0 Integer from 0 to 15 sets internal
parameters for pseudo transient
algorithm used to find DC operating
point. See “Pseudo Transient
Analysis” on page 258
PTAMAXITERS 20000 Maximum total number of iterations
allowed for pseudo transient algorithm
used to find DC operating point. See
“Pseudo Transient Analysis” on
page 258
PTAOUTPUTVECS false If specified, signal vectors will be
output during pseudo transient
analysis. This may be used to
diagnose a failure. See “Pseudo
Transient Analysis” on page 258
RELTOL 0.001 This is the relative tolerance that must
be met for each analysis point.
Reducing this number will improve
accuracy at the expense of simulation
time or/and convergence reliability.
Simulation results can not be relied
upon if its value is increased beyond
0.01. A more detailed discussion is
given in “Accuracy and Integration
Methods” on page 266
RELTOLMAX 0.01 RELTOL selectively relaxed to this
value if needed to allow transient
analysis to continue

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Option name Default Description


value

RESTHRESH 1e-6 Resistance threshold. If a resistor is


specified that is below this value,
SIMetrix will use a voltage based
implementation (V=IR) instead of the
conventional current based
implementation (V=I/R). Voltage based
resistors are slightly less efficient but
allow R=0 without numerical overflow
RSHUNT Infinite If specified a resistor of the specified
value is placed from every node to
ground. This can resolve problems
with floating nodes.
RTNSEED 0 Seed used for real time noise
SEED 0 Integer value. If non-zero will be used
to initialise random number generator
used for Monte Carlo analysis
distribution functions. See “Seeding
the Random Number Generator” on
page 248
SENSFILE [Link] Specify name of sensitivity data file.
SNAPSHOTFILE Specifies file name used to save
snapshot data. Defaults to netlist
name with .sxsnp extension
SOADERATING 1.0 Scales min and max values used in
“.SETSOA” specification. This allows a
de-rating policy to be globally applied
to SOA limits.
SOAEND -1 Specifies end time point for SOA. Use
with SOASTART. -1 means end of
simulation

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Option name Default Description


value

SOAMODE false Controls the Safe Operating Area


(SOA) test mode. See “.SETSOA” for
details on how to define a SOA test.

Can set to:

Off SOA testing is not enabled.


In this mode .SETSOA
controls will be read in and
any errors reported, but no
SOA testing will be
performed during the run.

Summary SOA testing enabled and


results given in summary
form with only the first
violation for each
expression given being
output.

Full SOA testing enabled with


full results given. Every
violation will be reported in
this mode.
SOAOUTPUT list Can be:

msg Results displayed in


command shell message
window, or console if run in
“non-GUI” mode
list Results output to list file
msg|list Results output to both list
file and command shell
message window
none Results not output to either
list file or message window.

Note that all results are always stored


for retrieval using the script function
GetSOAResults. So even if “none” is
specified the SOA data is always
available.
SOASTART 0.0 Specifies start time for SOA. Use with
SOAEND
SOAWRITEDEFS false If specified, SOA definitions are written
to the list file

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Option name Default Description


value

SOURCEMAXITERS 1000 Maximum total number of iterations


permitted for source stepping
algorithm. Set to zero to disable limit
TEMP 27 Unit = °C
Operating temperature of circuit. Note
this value can be overridden locally for
some devices. You can also use
.TEMP for this.
TIMESTATS false Equivalent to ACCT
TLMINBREAK See note Minimum break point for transmission
lines. Works in the same way as
MINBREAK but only for break points
generated by lossless transmission
lines. Default = MINTIMESTEP * 5e-5
TNOM 27 Unit = °C
Temperature at which model
parameters are defined. This can be
overridden in the model control.
TRTOL 7 This only affects transient analysis. It
is a relative value that is used to
determine an acceptable value for the
‘local truncation error’ before an
analysis point is accepted. Reducing
this value cause the simulator to
model the effects of energy storage
elements more accurately at the
expense of simulation time. See
“Accuracy and Integration Methods”
on page 266
TRYTOCOMPACT false Forces compaction of data for lossy
transmission lines. This speeds up
simulation at the expense of accuracy.

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Option name Default Description


value

VNTOL 1µ Unit = V
The absolute voltage error tolerance.
Circuits with large voltages present
(>100) may benefit from an increase in
this value. See “Accuracy and
Integration Methods” on page 266
VNTOLMAX 1m Unit = V
VNTOL selectively relaxed to this
value if needed to allow transient
analysis to continue.
WIDTH 80 Number of columns used for list file
output. This may be set to any
reasonable value and not limited to the
choice of 80 or 132 as with SPICE2
WIRETABLE none Define file containing wire table used
for the digital simulator’s wire delay.
See “Wire Delay” on page 281

.PARAM
.PARAM parameter_name [=] parameter_value [parameter_name [=]
parameter_value]...

Defines a simulation variable for use in an expression. Expressions may be used to


define device parameters, to define model parameters, for arbitrary sources and to
define variables themselves. See “Using Expressions” on page 29 for details.

parameter_name Sequence of alpha-numeric characters. Must begin with a letter


or underscore. May not contain spaces.
parameter_value Either:

A constant

OR

An expression enclosed by '{' and '}'. See “Using Expressions”


on page 29

Examples
.PARAM Vthresh = 2.4
.PARAM Vthresh = {(Vhigh+Vlow)/2}
.PARAM F0 1k Alpha 1 C1 {2*c2}
.PARAM R1 {2/(2*pi*freq*C1*alpha}

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Netlist Order

.PARAM controls that resolve to a constant are order independent; they can be placed
anywhere in a netlist. They can even be placed after another .PARAM expression that
depends on its value (but note this does not apply in subcircuits). .PARAM controls
that are defined as an expression that depends on other .PARAMs also defined as an
expression must be placed in sequential order. For example, the following is OK:

.PARAM C2 {C1*alpha*alpha/4}
.PARAM C1 1n
.PARAM alpha 1
.PARAM R1 {2/(2*PI*F0*C2*alpha}

The first .PARAM depends on alpha and C1 which are defined later in netlist. This is
OK (as long as it is not in a subcircuit) because alpha and C1 are constants. The
fourth .PARAM depends on C2 which is defined as an expression. The definition for
must - and does in the above example - come before the definition of R1. The
following would yield an error as the definition for C2 comes after the definition of
R1:

.PARAM R1 {2/(2*PI*F0*C2*alpha}
.PARAM C1 1n
.PARAM alpha 1
.PARAM C2 {C1*alpha*alpha/4}

Note that .PARAMs inside subcircuits are local to the subcircuit. This is explained in
next section.

Subcircuit Parameters
Parameters may be declared within sub circuits. E.g

.subckt ADevice n1 n2 n3 n4

.PARAM Vthresh 3.5


...
...
ends

In the above example, in reference to Vthresh within the subcircuit would use the value
declared by the .PARAM declared inside the subcircuit. That value would not be
available outside the subcircuit definition. Parameters may also be passed to
subcircuits. E.g.

X1 1 2 3 4 ADevice : threshold=2.4

or

X1 1 2 3 4 ADevice params: threshold=2.4

Any reference to threshold within the subcircuit definition would use that value.

Default values for parameters may also be specified in subcircuit definition:

.subckt ADevice n1 n2 n3 n4 params: threshold=2.4


...

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.ends

If that subcircuit is called without specifying threshold the default value of 2.4 will
be used. Note that it is not compulsory to declare default values.

Using .PARAM in Schematics

.PARAM controls may be appended to the netlist created by the schematic editor. For
information on how to do this, refer to “Adding Extra Netlist Lines” on page 13.

.PARAM in Libraries

.PARAM controls may be included in libraries specified using .LIB or by global


definitions. SIMetrix will search such libraries for any parameters used in expressions
that are not found in the netlist.

.POST_PROCESS
.POST_PROCESS scriptname [arguments]
Invokes the SIMetrix script scriptname at the end of a successful simulation. If present
arguments will be passed to the script as a single string.

scriptname may the name of an embedded file defined using .FILE and .ENDF. For
example, the following will cause the text “Simulation Complete” to be displayed in
the command shell when the run is complete:

.FILE on_complete
Echo "Simulation Complete"
.ENDF
.POST_PROCESS on_complete

.POST_PROCESS may be used to perform measurements on simulation results for


display in the command shell or written to a file.

.POST_PROCESS scripts will function even if the simulator is operating in a


standalone mode in which case any displayed messages created from, for example,
Echo or Show, will be directed to the simulator’s output device. In console mode, this
would be the console or terminal and in standalone GUI mode, this would be the
message window in the simulator status box. As there is no environment available in
the standalone mode, not all script commands and functions will be available.

For information about the SIMetrix script language, please refer to the SIMetrix script
reference manual.

.PRINT
.PRINT TRAN|AC|DC|NOISE|TF vector|{expression} ...

Instructs the simulator to output selected simulation data to the list file in tabulated
form.

Where:

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Chapter 6 Command Reference

vector Name of vector to print. May be in SIMetrix native format or


traditional SPICE format (see notes below).
expression Arithmetic expression of vectors

Notes

A traditional SPICE2 command, this was not supported by SIMetrix until release 4.0.
It is SPICE2 compatible but also supports some additional features:

• NOISE and TF results may be output as well as TRAN, AC and DC


• You can put expressions as well as single values enclosed in '{' and '}'. E.g.

.PRINT TRAN {vout-q5_c}


You can use the SPICE2 style method of accessing single voltages, differential
voltages and device currents. These are of the form:

Single ended voltage

funcname(nodename)

Differential voltage

funcname(nodename, nodename)

Device current

funcname(device_name)

Where:

funcname Function to be applied. For available list, see below.


nodename Node name as specified in the netlist.
device_name Name of device for current.
Available functions:

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Function Argument Analysis Meaning


name mode

V node name Transient Voltage at node


V node name AC Voltage magnitude at
node
VM node name AC Voltage magnitude at
node
VP node name AC Voltage phase at
node
VR node name AC Real voltage at node
VDB node name AC dbV at node
VG node name AC group delay at node
I two term. device name TRAN Current in device
IB BJT name TRAN Base current
IB MOSFET name TRAN Bulk current
IC BJT name TRAN Collector current
ID MOSFET/JFET name TRAN Drain current
IE BJT name TRAN Emitter current
IG MOSFET/JFET name TRAN Gate current
IS MOSFET/JFET name TRAN Source current
IS BJT name TRAN Substrate current
IM Two term device AC Device current
IP Two term device AC Current phase
IR Two term device AC Current real part
II Two term device AC Current imaginary
part
IDB Two term device AC Current dB
IG Two term device AC Current group delay

.PRINT controls may be placed inside a subcircuit definition in which case the device
and node names refer to local devices and nodes. Output will be listed for every
instance of the subcircuit.

For transient analysis the results are displayed at the interval specified by the time step
parameter on the .TRAN control. If this is zero or omitted, it defaults to (tstop-tstart)/
50. The data is created by interpolation unless the NORAW option (see page 215) is
specified in which case a time step is forced at the time step interval.

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Chapter 6 Command Reference

Examples
.PRINT TRAN V(VOUT)
.PRINT TRAN VOUT
.PRINT TRAN V(VPos, VNeg)
.PRINT TRAN {Vpos-VNeg}
.PRINT AC VDB(VOUT)

.PZ
.PZ N1 N2 N3 N4 CUR|VOL POL|ZER|PZ

N1, N2 Input nodes


N3, N4 Output nodes
CUR transfer function is of the type (output voltage)/(input current)
VOL transfer function is of the type (output voltage)/(input voltage)
Usually the last parameter would be PZ which instructs the simulator to find both poles
and zeros. The alternatives instruct it to find one or the other. This may be used if the
simulator aborts because it didn't converge on poles or on zeros, at least it can be
instructed to find the other.

To view the results of the pole-zero analysis select the command shell menu Graphs
and Data|List Pole-zero results. The poles and zeros will be listed in complex form.

.SENS
.SENS V(nodename [,refnodename])| I(sourcename)

This control instructs the simulator to perform a DC sensitivity analysis. In this


analysis mode, a DC operating point is first calculated then the linearised sensitivity of
the specified circuit voltage or current to every model and device parameter is
evaluated. The results are output to a file ([Link] by default but can be changed
with SENSFILE option) and they are also placed in a new data group. The latter allows
the data to be viewed in the message window (type Display) at the command line and
can also be accessed from scripts for further analysis.

.SETSOA
.SETSOA [ LABEL=label ] [ MODEL=modelname | INST=instname ]
[DEVICE=device] [DERATING=derating] [MEAN]
[ ALLOWUNUSED ] [ ALLOWWILD ]
expr1=( min1, max1[, xwindow1] )
[ expr2=( min2, max2[, xwindow2] ) ... ]

Defines a Safe Operating Area (SOA) specification. If SOA testing is enabled the
simulator will check simulated results against this specification and record any

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violations. See .OPTIONS setting “SOAMODE” on page 226 for details on how to
enable SOA tests.

The results of SOA testing are output to the list file by default and can optionally also
be displayed in the command shell message window, or console window if run in non-
GUI mode. They are also always available via a script function GetSOAResults(). See
.OPTIONS setting “SOAOUTPUT” on page 226 for more details.

label Optional label that will be included in every violation report.


You can use the following symbolic values in this label:

%INST% - substituted with the instance name that violated the


specification. This is only meaningful if MODEL or INST are
specified. (See below)

%MODEL% - substituted with the model name that violated the


specification. Only meaningful if MODEL is specified. (See
below)

%EXPR% - substituted with the expression that violated the


specification.

%SUBCKT% - applicable if the .SETSOA command is located


within a .SUBCKT definition. Value is substituted with the
subcircuit instance reference.
modelname If specified the expression or expressions supplied in expr1 etc.
are applied to every instance belonging to modelname. In this
case the expression may refer to node voltages and pin currents
for each instance processed. See details under expr1, expr2...
instname If specified the expression or expressions supplied in expr1 etc.
are applied to the specified instance (e.g. Q23, M10, R56). In
this case the expression may refer to node voltages and pin
currents of the specified instance. See details under expr1,
expr2...
device If INST or MODEL is specified using a wildcard specification,
only instances of the specified device type will be processed.
For example:

.SETSOA INST=* DEVICE=resistor...

will be applied to all resistors in the circuit. See “Creating a


Device Configuration File” on page 47 for a list of device
names.
derating Derates limit specification by specified factor. Default is 1.0
which means no derating. Value must be greater than 0. An
expression containing values defined using .PARAM may be
used.
expr1, expr2... Expression to be evaluated and compared against minimum and
maximum specs. This expression can access simulation results
using access variables. The format and scope of these variables
depends on whether MODEL, INST or neither is specified.

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Chapter 6 Command Reference

If neither is specified, the expression can use the global access


variables defined below:

Syntax Function Example


nodename Voltage on VOUT - voltage
node on node VOUT
n(nodename) Voltage on n(VOUT) -
node voltage on node
VOUT
instname#param Instance M2#vdsat - vdsat
parameter value for M2

Q23#c - current
in collector of
Q23
paramname Parameter
defined using
.PARAM

If there is a clash between a paramname and nodename, that is


if the same name could refer to either a node or a parameter,
then the parameter name takes precedence. To access the node
in this case, use the n(nodename) syntax.

Use the following values if MODEL or INST is specified. In


each case (excepting the global access variable) the variable
accesses a quantity for the instance being processed. With INST
this will be the single instance specified by instname. With
MODEL all instance belonging to the model specified by
modelname will be processed.

Syntax Function Example


pinname Current in pin c - current in
collector of
transistor
Ipinname Current in pin Ic - current in
collector of
transistor
Vpinname Voltage on pin Vc - voltage on
collector of
transistor
n(pinname) Voltage on pin n(c) - voltage on
collector of
transistor

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Syntax Function Example


Vxy Voltage Vbc - voltage
Where x = pin name 1, between x from base to
y= pin name 2. Both x and y. collector
and y must be single
letters
pow Power in
device
param Readback vdsat - ‘vdsat’ for
parameter MOSFET
#global_name Global node #VOUT - voltage
voltage or pin on net called
current VOUT

#q23#c - current
in collector of
q23
paramname Parameter
defined using
.PARAM

Note that currently the use of V() and I() is not accepted and will
result in an error message being displayed.
min, max Minimum and maximum values respectively. A violation
message will be produced if the value of the associated
expression is less than min or greater than max. Use ‘*’ if the
limit is to be ignored. E.g. (*, 15) will test a maximum value of
15 but the minimum value will not be tested. min and max
values may be scaled using a .OPTIONS setting, see
“SOADERATING” on page 225.

These values may be entered as expressions containing


variables defined using .PARAM.
xwindow Optional value specifies a minimum window that must be
surpassed before limit violations are registered. For example if
10u is specified for xwindow for a transient analysis, then the
limit must be exceeded continuously for at least 10uS before the
violation is recorded.

This value may be entered as an expression containing variables


defined using .PARAM.
ALLOWUNUSED If INST or MODEL are specified, an error will result if no
instances to be processed are found. If INST is specified the
error will occur if instname doesn’t exist. If MODEL is
specified, the error will occur if there are no instances using
modelname even if modelname itself is valid.

This error will be inhibited if ALLOWUNUSED is specified

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ALLOWWILD If specified, wildcards can be used for modelname and


instname. In this case SIMetrix will search for all devices that
match the wildcard specification. Use ‘*’ to match any sequence
of characters and ‘?’ to match a single character.
MEAN If specified all tests will be on the mean of the test expression
over the whole simulation run.

Examples
Test the voltage on the ‘p’ pin of R1. Will fail if it exceeds 0.5V
.setsoa INST=R1 vp=(*,0.5)

Test the power dissipation of R2. Fails if it exceeds 0.5mW


.setsoa INST=R2 pow=(*,0.5m)

Test the current into pin ‘p’ of R3. Fails if it exceeds 0.5mA
.setsoa INST=R3 ip=(*,0.5m)

Test the voltage across R4. Fails if it exceeds 0.85V for at least 100uS. Will be reported
using label “%INST%, high”, which resolves to “R4, high”
.setsoa LABEL="%INST%, high" INST=R4 vd=(*,0.85,100u)

Test the voltage across R4. Fails if it exceeds 0.7V for at least 500uS
.setsoa LABEL="%INST%, low" INST=R4 vd=(*,0.7,500u)

Tests voltage between ‘c’ and ‘e’ pins for all instances of model N1. Fails if voltage
drops below -0.5V or exceeds 25V
.setsoa MODEL=N1 vce=(-0.5,25)

Tests power all devices of type resistor. Fails if this exceeds 0.25W.
.setsoa INST=* ALLOWWILD DEVICE=resistor pow=(*,0.25)

Tests the mean power in instance Q1. Fails if it exceeds “2*bjtderating”. “bjtderating”
must ne defined using a .PARAM statement.
.setsoa LABEL="%INST%, pow(q1)" INST=Q1 MEAN pow=(*,2)
derating=bjtderating

Calculates the expression “n(c)*(q1#c-d1#p)+n(b)*q1#b+n(e)*(q1#e+d1#p)” and fails


if its mean exceeds 1.0. Violations will be reported using label “%SUBCKT%, power”.
Statement is intended to be placed in a subcircuit definition block and “%SUBCKT%”
will resolve to the reference of the subcircuit call.
.setsoa LABEL="%SUBCKT%, power" MEAN "n(c)*(q1#c-
d1#p)+n(b)*q1#b+n(e)*(q1#e+d1#p)"=(*,1)

.SUBCKT and .ENDS


.SUBCKT subcktname n1 [ n2 ]...
+ [ [params:] param_name1 [=] param_value1
+ [param_name2 [=] param_value2]...]

This control begins a subcircuit definition.

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subcktname Subcircuit name. This must begin with a letter


but may contain any legal ASCII character
except any whitespace (space, tab) or ' . ' . The
name must be unique i.e. no other subcircuits
may have the same name.
n1, n2 etc. Node names available externally. Must not be
zero.
param_name, param_value Parameter name and value. This sets default
values for parameters used within the
subcircuit. These values can be overridden for
each subcircuit instance. See “Using
Expressions” on page 29 for more info. Note
that it is not compulsory to declare default
values for subcircuit parameters.
IMPORTANT: Either the params: specifier or the first '=' may be omitted but not both.
If both are omitted it becomes impossible for the netlist scanner to tell the difference
between parameter names and node names.

.ENDS [ subcktname ]

Terminates a subcircuit definition. subcktname may be added for clarity but will be
ignored by SIMetrix.

A subcircuit consists of a .subckt control followed by a series of device or model


descriptions and terminating in a .ends control. A subcircuit is a circuit that can be
called into the main circuit (or indeed another subcircuit) by reference to its name. The
.subckt control is used to define the subcircuit while a subcircuit call - an 'X' device - is
used to create an instance of that subcircuit. Subcircuits have a number of uses:

• To repeat a commonly used section of circuit.


• To hide detail from the main circuit to aid circuit readability.
• To distribute models of integrated devices such as op-amps.
For a detailed discussion see “Subcircuits” on page 40

Subcircuit definitions usually reside in a text file and are read in as libraries. See User's
Manual for further details.

.TEMP
.TEMP temperature

This control sets the default simulation temperature. Some devices can override this on
a per instance basis. Units are degrees centigrade.

.TF
.TF inner_sweep_spec [ V ] pos_out_node [ VN ] neg_out_node
+ [[ INSRC ] in_source ] [ F frequency ] [SWEEP outer_sweep_spec ]
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Chapter 6 Command Reference

.TF inner_sweep_spec I source [ INSRC in_source ]


+ [ F frequency ] [SWEEP outer_sweep_spec ]

Spice Compatible:
.TF V( pos_out_node [, neg_out_node ]) in_source

.TF I (source) [ INSRC ] in_source

This control instructs the simulator to perform a small signal transfer function analysis.

pos_out_node Output node.


neg_out_node Output reference node. Defaults to ground if omitted for
standard SPICE syntax.
in_source Name of input source to which input noise will be referred.
inner_sweep_spec See “General Sweep Specification” on page 187 for syntax.
Defines sweep mode.
outer_sweep_spec If specified, analysis will be repeated according to this
specification. See “General Sweep Specification” on page 187
for syntax.
frequency Frequency at which analysis will be performed for non-
frequency sweeps. Default 0.
source Voltage source to specify output current.

Notes

The SIMetrix transfer function analysis remains syntax compatible with the SPICE
version but is substantially enhanced. The SPICE version performs the analysis at a
single point with frequency = 0. The SIMetrix implementation performs a swept
analysis using the same sweep algorithm used for AC, DC and NOISE.

Transfer function analysis is similar to AC analysis in that it performs a swept small


signal analysis. However, whereas AC analysis calculates the response at any circuit
node from a (usually) single input source, transfer function analysis calculates the
individual responses from each source in the circuit to a single specified output node.
This allows, for example, the series mode gain, common mode gain and power supply
rejection of an amplifier to be measured in one analysis. The same measurements could
be performed using AC analysis but several of them would need to be run. Transfer
function mode also calculates output impedance or admittance and, if an input source
is specified, input impedance.

The names of the output vectors will be of the form


Input voltage, output voltage
source_name#Vgain

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Input voltage, output current


source_name#Transconductance

Input current, output voltage


source_name#Transresistance

Input current, output current


source_name#Igain

Output impedance for voltage out will be called Zout. For a current output, the output
admittance will be calculated and will be named Yout.

If an input source is specified the input impedance will be calculated and called Zin.

Note that although the syntax for .TF retains compatibility with SPICE and earlier
versions of SIMetrix, the output provided is slightly different. Firstly, the data is
complex even if F=0 and secondly the names of the output vectors are different as
detailed above.

Examples

SPICE compatible. Outputs results at DC.

.TF V(Vout) Vin

As above but decade sweep from 1k to 100k

.TF FREQ DEC 25 1K 100K V(Vout, 0) Vin

Note that in the above example the '0' in V(Vout, 0) is compulsory. If is omitted, Vin
will be assumed as the reference node.

.TRACE
.TRACE vector_name [vector_name ...] graph_id

Set up a trace. This is graph plot that is updated as the simulation runs.

Where vector_name is the name of a net or pin


graph_id is an integer between 1 and 999 to specify which
graphs traces should use - see explanation below

graph_id is an arbitrary number that makes it possible to direct traces to different


graphs. Two traces with the same id will be always be put in the same graph. Traces
from subsequent simulations with that id will also go to that graph if it still exists
otherwise a new one will be created. To force two traces to go to separate graphs, use
different id's. Note that it doesn't matter what the id's value actually is - it could be 1 or
100 - as long as traces that must go to the same graph use the same value.

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Note that the AutoAxis feature available for normal plotting also works for Traces. So
if a current and voltage trace are both directed to the same graph, separate axes will be
created for them.

Examples

.trace v1_p 1 q1#c 1

In the above example a voltage - v1_p - and a current - q1#c - will both be traced on the
same graph. As they have different units, the AutoAxis feature will force the curves to
two different y axes.

.trace v1_p 1 q1#c 2


In this example the voltage and current traces will be directed to different graph sheets.

Notes

The .TRACE control has now been largely superseded by the .GRAPH control
(page 196) which is much more flexible. However, the .TRACE control is still useful
for specifying multiple traces on a single line. .GRAPH can only specify one signal at
a time.

.TRAN
.TRAN tstop
OR
.TRAN tstep tstop [ tstart [ tmaxstep ]] [ UIC ]
+ [SNAPSTEP sstart sstop sstep]
+ [SNAPSHOT slist]
+ [SNAPMODE=DCOP|SAVESTATE|ALL]
+ [FAST=fast_start] [RTNSTEP=rtnstep [RTNSTOP=rtnstop]
+ [RTNSTART=rtnstart] ] [SWEEP sweep_spec ]

This control instructs the simulator to perform a transient analysis. In this mode the
simulator computes the behaviour of the circuit over the specified time interval. The
circuit's currents and voltages are calculated at discrete time points separated by a
variable time step. This time step is adjusted automatically by the simulator according
to circuit activity. The circuit may contain any number of time varying voltage and
current sources (stimuli) to simulate external signals, test generators etc.

tstep This defines the interval for tabulated results specified by the
.PRINT control. It also defines the output interval for all data if
the NORAW option is specified. If there are no .PRINT controls
in the netlist and NORAW is not being used, this can be set to
zero or omitted altogether as in form 1 above. If set to zero it
defaults to (tstop-tstart)/50

tstep is also used to define default values for pulse and


exponential stimuli.

Note that if tstep and NORAW are specified a time point is


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forced at tstep intervals to calculate the output. This differs from


other SPICE programs which generate output at tstep by
interpolation.

tstep does not control the time step used by the simulator. This is
controlled automatically according to circuit activity.
tstop Stop time. Note that if running in GUI mode, a transient analysis
can be restarted from the front end using the RestartTran
command. See User's Manual for details.
tstart Start time. This is the time at which the storage of transient
analysis outputs commences. It is not the time at which the
analysis begins; this is always zero. tstart is zero if it is omitted.
tmaxstep Maximum time step. The simulator uses the largest time step
possible to achieve the required accuracy but will not increase it
beyond this value. If not specified it is set to (tstop-tstart)/50 .
UIC If specified a DC operating point is not calculated and initial
condition specifications are used instead
fast_start If specified, the simulation will run at reduced accuracy but
higher speed for the time specified by this parameter. The
reduced accuracy is implemented by altering a number of
tolerances and internal parameters. See notes below for more
details.
rtnstep If this parameter is specified, Real Time Noise analysis will be
enabled. Note that this feature is not available with all versions
of the program. rtnstep specifies the step size of the noise
generators. See “Real Time Noise Analysis” on page 243.
rtnstart Specifies time at which real time noise generators are switched
on.
rtnstop Specifies time at which real time noise generators are switched
off.
sstart Time at which snapshot saving begins. See below for
information on snapshots.
sstop Time at which snapshot saving stops. See below for information
on snapshots
sstep Interval between snapshot points. See below for information on
snapshots
slist One or more values defining absolute times at which snap shots
are saved. See below for information on snapshots
DCOP, SAVESTATE, ALL
Snapshot mode.
DCOP: Saves bias point information only.
SAVESTATE: Saves state of circuit for subsequent reload for
small signal analysis
ALL: Both of the above

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Chapter 6 Command Reference

The default is DCOP

Fast Start

If the FAST parameter is specified, the simulation will begin with a number of
tolerances and internal parameters altered to speed up the simulation at the expense of
accuracy. Just before the end of the fast start period, these tolerances and parameters
will be gradually restored to their normal values. Fast start is an aid for simulating
circuits such as switching power supplies and oscillators for which the initial start up
period is not of interest but takes a long simulation time. Note that although the fast
start interval can run sometimes as much as twice as quickly as normal, the fact that
accuracy is impaired can mean that the final steady state reached may not be very
accurate. This means that after the fast start period, an additional settling time may be
required for full accuracy to be reached.

Fast start sets the values of POINTTOL and RELTOL according to the value specified
by FASTPOINTTOL and FASTRELTOL respectively.

Snapshots

This feature allows the state of a simulation to be saved at user specified times during a
transient analysis. The states saved can subsequently be reloaded to perform small
signal AC analyses.

This allows the small signal response of a circuit to be examined at any point during a
transient analysis. This is especially useful in situations where a circuit is found to be
unstable in a transient run but this instability cannot be reproduced at the operating
point usually derived for an AC analysis.

The bias point information at the snapshot time may also optionally be saved. This
information is output to the list file.

To specify snapshot output, specify either the SNAPSHOT or SNAPSTEP keywords


with their associated parameters.

To initialise a small signal analysis with snapshot data, you must specify the
SNAPSHOT step mode of a multi-step analysis. See “Multi Step Analyses” on
page 189 for details

Real Time Noise Analysis


This is an extension of transient analysis rather than a separate analysis mode. When
activated, real time noise sources are added to all noisy devices with a magnitude and
frequency distribution calculated using the same equations used for small signal
analysis. This allows noise analysis to be performed on sampled data systems and
oscillators.

To use real time noise analysis, the following parameters may be added to the .TRAN
analysis line.

RTNstep Source step size in seconds. This will need to be small enough
to cover the frequency range of interest. The noise magnitude
starts rolling off at about 1/3*stepsize. Default=0 i.e. real time

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noise analysis disabled.


RTNstart Optional. Time after analysis start at which the noise sources
will be enabled. Default = zero
RTNstop Optional. Time after analysis start at which the noise sources
will be disabled. Default = stop time.
The parameters added to the .TRAN line must be named in the same way as .MODEL
parameters are named.

Example
.TRAN 0 1m RTNstep=1u RTNstart=500u

Analysis time 1m, RTN step size 1u, real time sources start at 500u. The step size
parameter - i.e. the first parameter on the .TRAN line - must be supplied if real time
noise parameters are to be included. This is only to comply with the syntax rules not
because the step size is needed for any other purpose. In most cases, just set it to zero
as in the above example.

Test Results

To test real time noise and verify it's accuracy we ran a test on a number of circuits
which compare AC noise with real time noise. The procedure was to run real time
noise analysis 50 times then plot the averaged Fourier spectrum. This test was repeated
for different transient run times and step sizes to build a noise spectrum over several
decades. The graph below is the result of one such test. This was carried out on the
BSIM3 buffer circuit provided in one of the examples except that a value for AF - the
flicker noise parameter - was added to the models. As can be seen in the graph below
the real time noise results strongly follow the AC noise results.

Similar tests were performed on circuits containing each of the major noise generating
devices including diodes, BJTs, JFETs, resistors (including its flicker noise parameter)
and also the Philips MOS9 and MEXTRAM devices. All showed results similar to
below with a close similarity between AC noise and real time noise.

These tests were performed using a simple script. This script is called [Link] and
can be found on the installation CD at SCRIPTS\EXAMPLES.

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Chapter 6 Command Reference

10µ

2µ 2mS RTNstep=2uS

20uS RTNstep=20nS
1µ 200n RTNstep=100p

400n

AC Noise result
200n

100n

40n

20n

1k 10k 100k 1M 10M 100M 1G

Frequency / Hertz

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Chapter 7 Monte Carlo Analysis

Overview
Monte Carlo analysis is a procedure to assess manufacturing yields by repeating
simulation runs with varying applied random variations to component parameters. The
technique is very powerful and usually gives a more realistic result than worst-case
analysis which varies component values to their extremes in a manner which produces
the worst possible result.

The implementation of Monte Carlo analysis in SIMetrix has been designed to be


quick to set up for simple cases while still providing the required flexibility for more
advanced requirements as might be required for integrated circuit design.

SIMetrix offers a level of flexibility for tolerance specification that cannot be found in
other products including some high priced UNIX based applications. It is possible, for
example, for different model parameters to be dependent on a single random variable.
This makes it possible to model the fact that a number of model parameters might be
dependent on a single physical characteristic, for example, the base width of a bipolar
transistor. Of course, lot tolerances are also implemented accounting for the matching
of devices in integrated circuits and other multiple components built onto a common
substrate. However, in many products, lot tolerances can only be applied to the same
type of device. In SIMetrix it is possible to model parametric relationships between
different types of device which occur in integrated circuits but which are rarely taken
into account.

As well as conventional multiple step Monte Carlo analysis, single step Monte Carlo
sweeps may also be performed. These are available for the four swept modes, .AC,
.DC, .NOISE and .TF. For example, a Monte Carlo analysis of the DC offset voltage of
an amplifier can be performed using a single run of .DC using a special sweep mode.
This is dramatically faster than the alternative of repeated .OP runs. This type of
analysis can also be used to analyse the gain of an amplifier at a single frequency using
.AC or .TF or even the noise, again at a single frequency, using .NOISE.

Specifying a Monte Carlo Run


Monte Carlo runs are invoked in the same way as multi-step analyses (see “General
Sweep Specification” on page 187). The basic syntax is:

.analysis_name analysis_parameters SWEEP MONTE num_runs

Where:

.analysis_name Dot control for analysis. Either .TRAN, .AC, .DC, .NOISE, .TF
analysis_parameters Specific parameters for that analysis
num_runs Number of runs

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Chapter 7 Monte Carlo Analysis

Examples

Run 10 Monte Carlo runs for 1mS transient analysis

.TRAN 1m SWEEP MONTE 10

100 Runs of a DC Sweep

.DC V1 0 5 0.01 SWEEP MONTE 100

AC sweep of voltage source V5 from -300mV to 300mV. Repeat 50 times

.AC DEVICE=V5 LIN 100 -300m 300m F=100000 SWEEP MONTE 50

Specifying a Single Step Monte Carlo Sweep


Monte Carlo sweep is one of the six modes available to the swept analysis modes, .AC,
.DC .NOISE and .TF. The other modes are explained in “General Sweep Specification”
on page 187. The general syntax is:

.analysis_name MONTE num_points analysis_parameters

Where:

.analysis_name Dot control for analysis. Either .AC, .DC, .NOISE, .TF
analysis_parameters Specific parameters for that analysis
num_points Number of points in sweep

Examples

1000 point Monte Carlo sweep.

.DC MONTE 1000

AC Monte Carlo sweep 100 steps. Frequency = 10K.


This is useful if - say - you are interested in the gain of an amplifier at one frequency
and it needs to lie within a defined tolerance. Previously you would need to repeat an
AC sweep at a single frequency to achieve this which could take a long time especially
if the circuit has a difficult to find operating point. The analysis defined by the
following line will take very little time even for a large circuit.

.AC MONTE 100 F=10K

Log File
Unless explicitly disabled with the NOMCLOG option, a log file will always be
generated for Monte Carlo analyses. It has the default name of [Link] but this
can be changed with the MCLOGFILE option. Here is an example of an actual output

Run 1: Seed=1226978751
Run 2: Seed=1521158126

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Simulator Reference Manual

Run 1 Run 2
Device Nom. Value (Dev.) Value (Dev.)
Q10.D1:bv 5.9 5.9185638 (0.314641%) 5.8463766 (-0.90887%)
Q10.Q1:bf 220 283.10907 (28.68594%) 130.81497 (-40.5386%)
Q10.Q1:is 380a 368.7899a (-2.95004%) 219.7988a (-42.1582%)
Q11.D1:bv 5.9 5.9425623 (0.721395%) 5.8262401 (-1.25017%)
Q11.Q1:bf 220 285.27225 (29.66921%) 129.91303 (-40.9486%)
Q11.Q1:is 380a 354.1045a (-6.8146% ) 220.1177a (-42.0743%)
Q12.D1:bv 5.9 5.8957932 (-713ppm ) 5.787891 (-1.90015%)
Q12.Q1:bf 220 280.37304 (27.44229%) 130.28208 (-40.7809%)
Q12.Q1:is 380a 359.6985a (-5.34249%) 225.8706a (-40.5604%)
Q13.D1:bv 5.9 5.9020281 (343.74ppm) 5.8132485 (-1.47036%)
Q13.Q1:bf 220 280.04731 (27.29423%) 129.20488 (-41.2705%)
Q13.Q1:is 380a 367.7199a (-3.2316% ) 222.1358a (-41.5432%)
Q14.D1:bv 5.9 5.9178142 (0.301936%) 5.8096709 (-1.531% )
Q14.Q1:bf 220 276.57192 (25.71451%) 129.93424 (-40.939% )
Q14.Q1:is 380a 364.6015a (-4.05223%) 222.7107a (-41.3919%)
Q4.D1:bv 5.9 5.9398543 (0.675496%) 5.8354342 (-1.09434%)
Q4.Q1:bf 220 277.08078 (25.94581%) 127.82878 (-41.896% )
Q4.Q1:is 380a 362.7751a (-4.53287%) 225.9888a (-40.5293%)
Q7.D1:bv 5.9 5.9281884 (0.47777% ) 5.8421649 (-0.98026%)
Q7.Q1:bf 220 276.66227 (25.75558%) 129.29449 (-41.2298%)
Q7.Q1:is 380a 360.4184a (-5.15304%) 227.0065a (-40.2614%)
Q8.D1:bv 5.9 5.8811702 (-0.31915%) 5.8260238 (-1.25383%)
Q8.Q1:bf 220 280.33672 (27.42578%) 131.98533 (-40.0067%)
Q8.Q1:is 380a 361.0834a (-4.97804%) 218.837a (-42.4113%)
Q9.D1:bv 5.9 5.9001842 (31.215ppm) 5.8517296 (-0.81814%)
Q9.Q1:bf 220 281.41183 (27.91447%) 128.02565 (-41.8065%)
Q9.Q1:is 380a 358.8014a (-5.57857%) 221.6128a (-41.6809%)

The ‘Device’ column provides the name of the device and its model or instance
parameter that is being reported. Q10.D1 is a diode ref D1 inside subcircuit Q1, BV is
the model parameter.

The ‘Nom’ column displays the nominal value for that parameter.

Two columns are listed for each run. ‘Value’ is the actual value of the parameter and
‘(Dev.)’ is the deviation from the nominal.

The ‘Seed’ values displayed for each run at the top are the values used to seed the
random number generator. These can be used to set the SEED option in order to repeat
a particular random set. See below for more details.

Seeding the Random Number Generator


The random variations are created using a pseudo random number sequence. The
sequence can be seeded such that it always produces the same sequence of numbers for
a given seed. In Monte Carlo analysis, the random number generator is seeded with a
new value at the start of each run and this seed value is displayed in the log file (see
above). It is also possible to fix the first seed that is used using the SEED option. This
makes it possible to repeat a run. To do this, note the seed value of the run of interest
then add the line:

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Chapter 7 Monte Carlo Analysis

.OPTIONS SEED=seed_value

For example if you wanted to repeat run 2 in the above example you would add this
line:

.OPTIONS SEED=1521158126

The first run of each Monte Carlo analysis will use the same random values as run 2
above. Note this assumes that only changes in values are made to the circuit. Any
topology change will upset the sequence.

Specifying Tolerances

Overview
Tolerances for Monte Carlo analysis may be specified by one of the following
methods:

1. Using a distribution function in an expression.


2. Using the device parameters TOL, MATCH and LOT
3. Using a tolerance model
1. above is new to release 4 and is the most general and flexible. 2 and 3 are provided
primarily for backward compatibility but may also be more convenient in some
circumstances.

Distribution Functions
To specify Monte Carlo tolerance for a model or device parameter, define the
parameter using an expression (see “Using Expressions” on page 29) containing one of
the following 12 functions:

Name Distribution Lot?

GAUSS Gaussian (3-sigma) No


GAUSSL Gaussian (3-sigma) Yes
UNIF Uniform No
UNIFL Uniform Yes
WC Worst case No
WCL Worst case Yes
GAUSSE Gaussian logarithmic (3- No
sigma)
GAUSSEL Gaussian logarithmic (3- Yes
sigma)

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Name Distribution Lot?

UNIFE Uniform logarithmic No


UNIFEL Uniform logarithmic Yes
WCE Worst case logarithmic No
WCEL Worst case logarithmic Yes

The logarithmic versions are included for compatibility with release 3.1 and earlier but
are nevertheless useful for some parameters which are logarithmic in nature such as the
IS parameter for PN junctions.

The graphs below show the characteristics of the various distributions. The curves
were plotted by performing an actual Monte Carlo run with 10000 steps.

WC
4
WCE

0
350

GaussE
300

UnifE
250 Gauss

200

Unif
150

100

50

0
0 0.5 1 1.5 2

V 500mV/div

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Chapter 7 Monte Carlo Analysis

Examples

Apply 50% tolerance to BF parameter of BJT with gaussian distribution.

.MODEL NPN1 NPN IS=1.5e-15 BF={180*GAUSS(0.5)}

Lot Tolerances

The lot versions of the functions specify a distribution to be applied to devices whose
tolerances track. These functions will return the same random value for all devices that
reference the same model.

Alternatively, a device can be given a lot value as was required with earlier versions of
SIMetrix. Devices must have the same lot value, and also reference the same model, in
order to track. This allows, for example, two or more chips using the same process to
be simulated together without having to rename the models.

Examples

Specify 50% uniform lot tolerance and 5% gaussian device tolerance for BF parameter

.MODEL NPN1 NPN IS=1.5E-15 BF={180*GAUSS(0.05)*UNIFL(0.5)}

Here is an abbreviated log file for a run of a circuit using 2 devices referring to the
above model:

Run 1 Run 2
Device Nom. Value (Dev.) Value (Dev.)
Q1:bf 180 93.308486 (-48.162% ) 241.3287 (34.0715% )
Q2:bf 180 91.173893 (-49.3478%) 245.09026 (36.16126%)

Run 3 Run 4
Device Nom. Value (Dev.) Value (Dev.)
Q1:bf 180 185.95824 (3.310133%) 210.46439 (16.92466%)
Q2:bf 180 190.8509 (6.02828% ) 207.04202 (15.02335%)

For the four runs BF varies from 91 to 245 but the two devices never deviate from each
other by more than about 2.7%.

Notes

The tracking behaviour may not be as expected if the model definition resides within a
subcircuit. When a model is defined in a subcircuit, a copy of that model is created for
each device that calls the subcircuit. Here is an example:

XQ100 VCC INN Q100_E 0 NPN1


XQ101 VCC INP Q101_E 0 NPN1

.SUBCKT NPN1 1 2 3 SUB


Q1 1 2 3 SUB N1
Q2 SUB 1 2 SUB P1

.MODEL N1 NPN IS=1.5E-15 BF={180*GAUSS(0.05)*UNIFL(0.5)}


.ENDS

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In the above, XQ100 and XQ101 will not track. Two devices referring to N1 inside the
subcircuit definition would track each other but different instances of the subcircuit
will not. To make XQ100 and XQ101 track, the definition of N1 should be placed
outside the subcircuit. E.g.

XQ100 VCC INN Q100_E 0 NPN1


XQ101 VCC INP Q101_E 0 NPN1

.SUBCKT NPN1 1 2 3 SUB


Q1 1 2 3 SUB N1
Q2 SUB 1 2 SUB P1

.ENDS
.MODEL N1 NPN IS=1.5E-15 BF={180*GAUSS(0.05)*UNIFL(0.5)}

Arguments to Distribution Functions - the ‘key’ Value

Each of the distribution functions takes 1 or 2 arguments. The first argument is the
tolerance while the second is an optional key value. The key is an arbitrary number -
preferably an integer - which, in effect, names a random variable for which the results
of that distribution function will be based. Another call to the same distribution
function in the same model and with the same key value, will also be based on the
same random variable and return the same value for each Monte Carlo step. The key
make it possible to accommodate parameters that tend to track each other possibly
because they depend on the same physical characteristic of the device.

Example

Suppose the BF and TF parameters of a BJJT tend to track each other. That is a 50%
increase in BF tends to be accompanied by a 50% increase in TF (there is no physical
basis for this; it's just an example). The following model definition would implement
this:

.MODEL NPN1 NPN BF={UNIF(0.5,1)*180} TF={1e-11*UNIF(0.5,1)}

For all devices using that model, BF and TF will always have a fixed relationship to
each other even though each parameter can vary by +/-50% from one device to the
next.

Here is the log of a run carried out on a circuit with two of the above devices:

Run 1 Run 2
Device Nom. Value (Dev.) Value (Dev.)
Q1:bf 180 226.52869 (25.84927%) 117.2733 (-34.8482%)
Q1:tf 10p 12.58493p (25.84927%) 6.515184p (-34.8482%)
Q2:bf 180 179.58993 (-0.22782%) 164.21785 (-8.76786%)
Q2:tf 10p 9.977218p (-0.22782%) 9.123214p (-8.76786%)

Notice that the BF and TF parameters always deviate by exactly the same amount for
each device. However, the two devices do not track each other. If this were needed, the
lot versions of the functions could be used instead. E.g.

.MODEL NPN1 NPN BF={UNIFL(0.5,1)*180} TF={1e-11*UNIFL(0.5,1)}

This is the log for such an example:

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Run 1 Run 2
Device Nom. Value (Dev.) Value (Dev.)
Q1:bf 180 104.57858 (-41.9008%) 93.855425 (-47.8581%)
Q1:tf 10p 5.809921p (-41.9008%) 5.21419p (-47.8581%)
Q2:bf 180 104.57858 (-41.9008%) 93.855425 (-47.8581%)
Q2:tf 10p 5.809921p (-41.9008%) 5.21419p (-47.8581%)

Distribution Functions and .PARAM

The key mechanism described above only works for parameters within the same
model. If you wish to define a fixed relationship between parameters of different
models then you can define a random variable using .PARAM.

Using a distribution function in a .PARAM expression in effect creates a global


random variable. .PARAM expressions are only evaluated once for each Monte Carlo
step so the parameter it defines will be the same value wherever it is used.

Note that .PARAM values used for this purpose should be defined at the top level i.e.
not in a sub-circuit. If defined in a sub-circuit they will be local to that sub-circuit so
each instance of the sub-circuit will use its own random variable.

TOL, MATCH and LOT Device Parameters


These parameters may be used as a simple method of applying tolerances to simple
devices such as resistors. The TOL parameter specifies the tolerance of the device's
value. E.g.

R1 1 2 1K TOL=0.05

The above resistor will have a tolerance of 5% with a gaussian distribution by default.
This can be changed to a uniform distribution by setting including the line:

.OPTIONS MC_ABSOLUTE_RECT

in the netlist.

Multiple devices can be made to track by specifying a LOT parameter. Devices with
the same LOT name will track. E.g.

R1 1 2 1K TOL=0.05 LOT=RES1
R2 3 4 1k TOL=0.05 LOT=RES1

R1 and R2 in the above will always have the same value.

Deviation between tracking devices can be implemented using the MATCH parameter.
E.g.

R1 1 2 1K TOL=0.05 LOT=RES1 MATCH=0.001


R2 3 4 1k TOL=0.05 LOT=RES1 MATCH=0.001

R1 and R2 will have a tolerance of 5% but will always match each other to 0.1%.
MATCH tolerances are gaussian by default but can be changed to uniform by
specifying

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.OPTIONS MC_MATCH_RECT

Distributions are always the logarithmic versions as described in “Distribution


Functions” on page 249

If using device tolerance parameters, note that any absolute tolerance specified must be
the same for all devices within the same lot. Any devices with the same lot name but
different absolute tolerance will be treated as belonging to a different lot. For example
if a circuit has four resistors all with lot name RN1 but two of them have an absolute
tolerance of 1% and the other two have an absolute tolerance of 2%, the 1% devices
won't be matched to the 2% devices. The 1% devices will however be matched to each
other as will the 2% devices. This does not apply to match tolerances. It's perfectly OK
to have devices with different match tolerances within the same lot.

Tolerance Models
Overview
Tolerance models are an alternative method of applying tolerances to device models to
the distribution function method described in an earlier section. The distribution
function method is in general more flexible and is recommended for most applications.
However, the tolerance model method has some advantages as follows:

• It is compatible with earlier SIMetrix versions from 2.0 to 3.1


• It allows tolerances to be applied to devices without modifying the main model.

Definition

The format for a tolerance model:

.MODEL modelname [Link] parameter_list

modelname must be the same name as the normal model for the device while
modeltype must be the same type. So for example a tolerance model for a Q2N2222
transistor might be:

.MODEL Q2N2222 [Link] BF=0.5

This will vary the BF parameter over a +/- 50% range for all BJTs referring to the
Q2N2222 model. The above model only specifies one parameter but you can place any
parameter specified for that device in a tolerance model.

For MOSFETs the level number must be included with the tolerance model otherwise
the model will be ignored.

Important note

Note that tolerances will only be applied to parameters explicitly specified in the base
model for the device. Tolerances will not be applied to default values. If the base
model for the Q2N2222 device in the above example is:

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Chapter 7 Monte Carlo Analysis

.MODEL Q2N2222 npn ( IS=2.48E-13 VAF=73.9 NE=1.2069


+ TF=4.00E-10)

The BF parameter in the tolerance model would not be used as it is not specified in the
base model. If the base model was modified to:

.MODEL Q2N2222 npn ( IS=2.48E-13 VAF=73.9 NE=1.2069


+ TF=4.00E-10) BF=400

Then the BF tolerance would be applied.

Matching Devices Using Tolerance Models

To match devices with tolerances defined using a tolerance model, specify the LOT
parameter on the device line. E.g.

Q1 1 2 3 0 Q2N2222 LOT=lot1
Q2 4 5 6 0 Q2N2222 LOT=lot1

.MODEL Q2N2222 [Link] BF=0.5

In the above example the BF parameter for Q1 and Q2 will always be the same.

To specify a deviation for matched devices requires a match tolerance model


definition. This is of the form:

.MODEL modelname [Link] parameter_list

modelname must be the same name as the base model for the device while modeltype
must be the same type. So for example a matching tolerance model for a Q2N2222
transistor might be:

.MODEL Q2N2222 [Link] BF=0.5

Note that the components will only be matched if they all refer to the same model. Any
components with the same lot name but referring to a different model treated as if they
belong to a different lot.

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Chapter 8 Convergence and Accuracy

Overview
In transient and DC analyses, an iterative method is used to analyse the circuit.
Generally, iterative methods start with an initial guess for the solution to a set of
equations and then evaluate the equations with that guess. The result of that evaluation
is then used to derive a closer estimate to the final solution. This process is repeated
until a solution is found that is within the error tolerance required. SIMetrix and SPICE
use a technique known as Newton-Raphson1 iteration which usually converges
extremely rapidly. However, there are occasions when this process is either
unreasonably slow or fails altogether. Under these circumstances the simulation will
abort.

SIMetrix offers superior convergence to all other products in its price bracket and
possibly all PC based simulators generally. SIMetrix passes 100% of the circuits in the
CircuitSim90 benchmark suite compared with about 60% for unmodified SPICE3.
This performance has been achieved as a result of the following developments to the
simulator core.

• Automatic pseudo transient analysis algorithm for operating point solution. See
below for details.
• Enhancements to GMIN and source stepping algorithms to use a variable step
size. (The standard SPICE3 variants use a fixed step).
• Junction GMIN DCOP Convergence Method
• Proprietary enhancements to transient analysis algorithm.
• Improvements to device models to remove discontinuities.
With these improvements, convergence failure with SIMetrix is extremely rare.
However, it is impossible to eliminate this problem altogether and there still remain
some circuits which fail.

In this chapter we explain some of the causes of non-convergence and some of the
strategies SIMetrix uses to prevent it. Also explained is what to do in the rare event
that convergence fails.

DC Operating Point

Overview
As explained in “DC Operating Point Algorithms” on page 263 SIMetrix has four
different algorithms at its disposal to solve the DC operating point. For this analysis
mode to fail, and assuming the default settings are being used, all four algorithms must
fail.

1. Sir Isaac Newton 1674-1721 and Joseph Raphson 1648-1715. This algorithm has been
around somewhat longer than circuit simulators!

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The following sections describe the possible reasons for failure of each mode and what
can be done about them.

The general procedure is as follows:

1. Check your circuit. Check that all components are the correct way around and
have the correct values. Make sure you haven't used 'M' when you meant 'Meg'.
2. Refer to section “Source and GMIN Stepping” and see if GMIN or source
stepping can be made to work.
3. Refer to section “Pseudo Transient Analysis” to get pseudo transient analysis
converging.
4. Contact technical support. We don't officially offer a convergence fixing service
and reserve the right to decline help. However, we are always interested in non-
converging circuits and usually we will look at your circuit to see if we can
identify the problem.

Source and GMIN Stepping


By default, if these modes fail, SIMetrix will carry on and attempt pseudo transient
analysis. It will not do so only if instructed not to using the dcopSequence option (See
“Controlling DC Method Sequence” on page 265). Pseudo transient analysis usually
succeeds but sometimes can take a long time so you may prefer to get one of these
methods working instead. Also, if pseudo transient analysis fails it is desirable to first
see if GMIN or source stepping can be made to work.

There are a few options you can set to encourage these modes to converge. These are

Name Default Set to What it does

GMINSTEPITERLIMIT 20 100 The number of iterations


attempted for each
GMIN step
GMINMAXITERS 1000 0 (equivalent to Total number of
infinity) iterations allowed for
GMIN stepping
SOURCEMAXITERS 1000 0 (equivalent to Total number of
infinity) iterations allowed for
source stepping

It is only worth changing gminMaxIters or sourceMaxIters if the iteration limit is


actually being reached. Often GMIN and source stepping fail to converge before the
iteration limit is reached. To find out, select the command shell menu Simulator|Show
Statistics. This displays, amongst other things, the number of iterations used for GMIN
and/or source stepping. If they exceed 1000 then the iteration limit has been reached.
This means that GMIN/source stepping may have succeeded if it had been given a
chance.

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Pseudo Transient Analysis


Pseudo transient analysis is the most powerful method known and it is rare for it to fail.
It is not however infallible and can go wrong for the following reasons:

1. The transient analysis itself failed to converge. (This is rare)


2. The circuit oscillates

Convergence failure in pseudo transient analysis

You will get the error message

Cannot find DC operating point


No convergence in pseudo transient analysis

The reasons why this may happen are the same as for transient analysis and are
covered in “Fixes for Transient Non-convergence” on page 262.

Circuit oscillation
You will see the message

Cannot find DC operating point


Iteration limit exceeded in pseudo transient analysis

The circuit can oscillate because:

1. It is designed to i.e. it is or has an oscillator


2. It is supposed to be stable but passes an unstable region during supply ramping
3. It is supposed to be stable but has a fault in its design
4. It is stable but is made unstable by the capacitors added during the pseudo
transient analysis

If the circuit is an oscillator

If 1. then you must disable the oscillator during the DC solution. You can do this by
one of the following methods:

1. Apply an initial condition to a point on the circuit that will break the oscillator's
feedback loop.
2. Use the capacitor/inductor PTAVAL parameter to change its value during pseudo
transient analysis. This parameter can be applied to a component or components
that form part of the oscillator. In the netlist the parameter is applied at the end of
the component line. E.g for a capacitor:

C12 N2 N6 1.2n PTAVAL=1

In the above a 1.2n capacitor will take the value of 1 farad during pseudo
transient analysis.

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Chapter 8 Convergence and Accuracy

The circuit is not supposed to be an oscillator

If the circuit does not have any intentionally unstable elements then diagnosis of the
problem is a little harder. Firstly, you need to rule out 4. above as a possible cause. As
explained in “DC Operating Point Algorithms” on page 263, SIMetrix adds its own
capacitors to your circuit during pseudo transient analysis in order to overcome
potential problems with regenerative action. The problem is that these added capacitors
can themselves make a circuit unstable. So the first thing to try is to inhibit the addition
of these capacitors. To do this, add the following line to the netlist (See “Adding Extra
Netlist Lines” on page 13 to find out how to add to a schematic).

.OPTIONS PTACONFIG=1

then re-run the simulation.

The circuit is not supposed to be an oscillator but it is

If this fails, then life gets even more complicated! If it fails with the message

Iteration limit exceeded in pseudo transient analysis

then it is very likely that the circuit is oscillating or entering an unstable region. If a
different message is displayed go to “The circuit doesn't oscillate but still doesn't
converge” below. To allow diagnosis of what is happening SIMetrix provides a method
of analysing the circuit during the pseudo transient ramp. By default, no data is output
during pseudo transient analysis but this can be changed as follows:

1. Set the analysis mode to DC operating point only.


2. Add the simulator option ptaOutputVecs by adding the following line to the
netlist:

.OPTIONS PTAOUTPUTVECS
3. Now run the simulation for a while or until it stops.
You can now probe the circuit in the normal way to see what is oscillating. Once the
oscillation has been fixed, you should be able to simulate the circuit successfully.

The circuit doesn't oscillate but still doesn't converge

As there are no added capacitors, there is a risk that pseudo transient analysis can fail
for the same reason that GMIN and source stepping sometimes fail. In this case you
will get the message:

No convergence in pseudo transient analysis

If this happens your only recourse is the final desperation measure. This is to repeat the
simulation with all valid values of ptaConfig from 2 to 15. (You can skip 7 as this is the
default). ptaConfig is a simulator option that controls some of the parameters used in
pseudo transient analysis. Most circuits pass for all settings but a few are more
selective.

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Accept Pseudo Transient Unconditionally

You can specify pseudo transient analysis to be accepted unconditionally at some time
after it has started. This is often a good solution to problems caused by circuit
oscillation especially if the oscillation is small and unintended. To accept pseudo
transient unconditionally, set the option:

.OPTIONS PTAACCEPTAT=time

Specify a time value that is adequate for the circuit state to settle as much as possible.

Junction Initialised Iteration


By default, this is the first method to be tried. If it fails, SIMetrix will then attempt
source stepping, GMIN stepping and finally pseudo transient analysis. Usually one of
these other methods will succeed and it is not worth spending time getting this method
to work.

If it does work, however, this is usually the fastest method and this can be put to good
use for repetitive runs e.g. Monte Carlo. It can be made to succeed using nodesets (see
next section) and with a wisely chosen selection it is possible to speed up repetitive
runs. Assuming one of the other methods does complete to a solution, the best way of
creating nodesets is by using the SaveRHS command. This is explained in the next
section.

Using Nodesets
Nodesets have two uses, one to aid convergence and the other to bias the solution in
circuits that have more than one stable state.

Initially nodesets work exactly the same way as initial conditions. The nodeset voltage
is applied via a 1 Ohm (by default) resistor and the solution is completed to
convergence (by any of the methods). The nodeset is then released and the solution
repeated. If the nodeset voltage is close to the actual solution the convergence of the
second solution should be rapid.

With SIMetrix, it is rarely necessary to use nodeset's to find the DC solution of a


circuit. They can, however, be useful for speeding up the operating point analysis for
circuit that have already been solved. You may wish to do this for a Monte-Carlo
analysis, for example.

SIMetrix provides a means of creating nodeset's using the SaveRHS command. To


make use of this, proceed as follows:

1. Run a DC operating point analysis


2. Save the solution to a file using the SaveRhs command as follows:

SaveRhs /nodeset [Link]

This will save to the file [Link] a .nodeset control specifying the solution at
each node.

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Chapter 8 Convergence and Accuracy

3. Paste the contents of [Link] to the netlist. Alternatively, include the file using
the .INC control. (See “Adding Extra Netlist Lines” on page 13 to find out how
to add to a schematic).
If you now repeat the DC analysis, you should now find that the solution is very rapid.
Depending on the nature of your circuit, you may also find that the solution is found
easily even if you modify the circuit. This is not, however, guaranteed.

Transient Analysis

What Causes Non-convergence?


Fundamentally there are four reasons for convergence failure in transient analysis.

1. There is no solution to the circuit within the numerical range of the computer
(approx. +/- 10308).
2. One or more device models contains a discontinuity or (less of a problem) a
discontinuity in its first derivative.
3. The circuit has a discontinuity caused by undamped regenerative action.
4. The solution matrix is ill-conditioned and the machine does not have sufficient
accuracy to solve it to the required tolerance.
1. and 3. above are circuit problems. A trivial example of 1. is a PN junction biased by
a large voltage. Without any series resistance, the voltage does not need to be very high
for the current in the device to exceed the range of the machine. An example of 3. is a
bistable circuit where the device capacitances are not modelled. The action of
switching state would theoretically occur in zero time, a situation the simulator cannot
be guaranteed to handle. Note also that negative valued components can cause 1. or 3.
to occur.

2. is usually a software problem that the user can do little about. However, we are not
aware of any discontinuities in the standard devices and have removed the ones we
have found in the original SPICE3 code. It is possible to create a device with the
arbitrary source that contains discontinuities. If your circuit has any of these devices in
it you should check the equations for discontinuous behaviour. In particular the
functions SGN() and U() are discontinuous and should be avoided.

4. is probably the most common cause of convergence failure in most other SPICE
products but is rare in SIMetrix. This is because we have done an extensive amount of
work to eradicate the problem.

Nevertheless we still occasionally see circuits that fail. Usually they have one, or more
likely, a combination of the following:

Very small resistors especially if they are not connected to ground.


Very large capacitors especially if they are not connected to ground.
Very large inductors especially if they are not connected to ground.
Circuit forced to use very small time steps perhaps because of fast rise/fall times.
Very large currents/voltages
Very high gain loops.

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By ‘very’ in the above we mean extreme. 1000V is not a very large voltage but
1000MV volts is. 1mΩ is not particularly small but 1pΩ is. If your circuit has any
extreme values, try and moderate them. Don't use non-physical values of components
if you can avoid it.

Fixes for Transient Non-convergence


1. As with DC operating point, check your circuit. In particular, check that you are
not doing anything which might cause numerical difficulties such as forward
biasing a zero resistance PN junction with a large zero source impedance voltage
source.
2. Do anything that will prevent small time steps being needed. Gross non-
linearities, regenerative loops and high gain loops all require small time-steps if
not well damped. It may be that you have left out damping components to
simplify the circuit and speed the simulation. It is worth noting that an accurately
modelled circuit frequently converges more easily than an idealised circuit.
3. Avoid using unrealistically large capacitors or inductors and unrealistically small
resistors if at all possible. You should especially avoid such components if non-
grounded.
4. Try setting the PIVREL option to 0.999.
5. If all else fails you can try relaxing some of the tolerances. If your circuit does
not have any small (sub-µA) currents then set ABSTOL to 1e-9 or 1e-6. You can
also increase VNTOL (default 1e-6) to say 1e-3 if your circuit only has large
voltages. Increasing RELTOL is the very last thing you should try. In our
experience, increasing RELTOL beyond its default value (0.001) is rarely a
reliable solution and can make matters worse.
6. Contact technical support. We don't officially offer a convergence fixing service
and reserve the right to decline help. However, we are always interested in non-
converging circuits and usually we will look at your circuit to see if we can
identify the problem.

DC Sweep
DC sweep is basically a repeated DC operating point and so the issues relating to that
mode also apply to DC sweep. However, if you are sweeping a voltage or current
source, then an altogether better way of dealing with DC sweep problems is to simulate
the DC sweep using transient analysis with a slow ramp.

Using transient analysis to perform DC sweep also resolves problems that can occur
with circuits that have regions where there is more than one stable state e.g. bistables
or schmitt triggers. Consider sweeping the input voltage of a schmitt trigger circuit.
When the input voltage is between the lower and upper thresholds, the circuit has two
stable states and the DC algorithm could find either of them. As each step in a DC
analysis is initialised with the previous step, it will usually find the correct solution but
this is not guaranteed. This means that the output could change state even though the
input has not passed either threshold. This problem doesn't occur in transient analysis
as in this mode the circuit is running as it would in real life.

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Chapter 8 Convergence and Accuracy

DC Operating Point Algorithms


SIMetrix uses five alternative strategies to resolve the DC operating point. These are:

1. Junction initialised iteration. This is our name for the standard algorithm
sometimes simply known as ‘DC Iteration’.
2. Source stepping.
3. Diag GMIN stepping.
4. Junction GMIN stepping.
5. Pseudo transient analysis.
These are described in the following sections.

Junction Initialised Iteration


This is the standard algorithm and is sometimes known simply as ‘DC iteration’. Each
semiconductor junction is initialised with a small voltage and iteration then proceeds
until convergence (or otherwise). This method often succeeds and is usually the
quickest. However, the starting point is only a bit better than an educated guess and can
be so far removed from the real solution that it never has a chance of succeeding.
(‘Junction initialised iteration’ is a name we have coined and you may see it referred to
as JI2 elsewhere in this manual and also in messages output by SIMetrix)

Source Stepping
Source stepping. This method - as with all the remaining methods to be described -
belong to a class of convergence strategies known as continuation methods. These all
work by repeating the iterative process while gradually varying some circuit parameter.
The circuit parameter is chosen so that at its start value the solution is known or trivial
and at its final value the solution is the operating point that is required. In source
stepping, all the circuit's power sources are gradually ramped up from zero to their
final value. While at zero, the circuit's solution is trivial; all the voltages and currents
are zero. At the first step, the supplies might be ramped up to 10% of their maximum
and the solution iterates to convergence. Then the supplies are increased and the
process is repeated. At each step the solution is initialised with the previous solution
which, if the steps are small, will be close to the new solution that is required and
convergence will therefore be relative easy to achieve.

This method is quite effective and is included in all SPICE based simulators including
those derived from SPICE2. However the SPICE versions use a fixed step size,
whereas in SIMetrix (since version 2.0), the step size is variable so if a step fails, the
step size is reduced and it tries again.

However, even with an arbitrarily small step size, this method can fail if the circuit
contains some kind of regenerative action. As the supplies are ramped it is possible for
the circuit to abruptly switch from one state to another as in a schmitt trigger. Although
circuits such as schmitt triggers do give difficulty, even circuits that do not have such
elements can also give trouble.

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Diagonal GMIN Stepping


In this method, a large conductance term is added to every diagonal entry of the
solution matrix and gradually reduced. This is similar to placing a low value resistor
from every node of the circuit to ground but is by no means equivalent. The high
conductance term (=low resistance) in the matrix effectively swamps non-linearities
and as a result the solution is easy to find. The term is gradually reduced until it is zero.

This method is also effective and sometimes works for circuits for which source
stepping fails. It is included with all SPICE3 derived simulators but, as with source
stepping, the SPICE variants use a fixed step while SIMetrix uses a variable step.

GMIN stepping suffers from the same problems as source stepping but not always with
the same circuits so it always worth trying both approaches.

The received wisdom has always been that GMIN stepping is more effective than
source stepping. This has not however been borne out by our own research which has
shown the source stepping converges more often and more quickly. For this reason,
SIMetrix attempts source stepping before GMIN stepping. This is the reverse of
SPICE3 and its derivatives.

Junction GMIN Stepping


The junction GMIN stepping method incrementally steps the conductance across
semiconductor junctions. This in effect sweeps the GMIN option parameter.

This method is effective for CMOS IC designs as long as GMIN is implemented as a


conductance between drain and source. This is not the default configuration for
LEVEL 1 to 3 MOSFETs in which GMIN is implemented as two conductances
between the drain and bulk and source and bulk. For other MOSFET models such as
BSIM3 and EKV, the default GMIN is now between source and drain. For designs
containing these devices, Junction GMIN Stepping is the first method attempted after
JI2. For circuits that do not contain such devices, this method is not attempted at all.

Pseudo Transient Analysis


This method finds the solution using transient analysis. In SIMetrix, a transient
analysis is conducted while ramping up all power sources, in effect simulating the
action of switching on the power supplies. This is not the same as source stepping as
the latter is a pure DC method with all reactive components set to zero. Because
reactive components - i.e. capacitors and inductors - are included in transient analysis,
effects such as abrupt changes are damped and occur gradually over a finite time. This
eliminates the problem - described above - that the DC continuation methods suffer
from.

The above assumes, however, that the circuit is well modelled with all reactive
elements correctly specified. With integrated circuit design this is usually the case, but
for discrete circuits frequently is not. Opamp macro models, for example, consist of
many idealised elements that are not always damped by reactive elements. Without
such damping, pseudo transient analysis can fail for the same reason as source and
GMIN stepping. So, SIMetrix automatically adds additional capacitance to the circuit
to prevent this situation from arising.

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The end result is a convergence strategy that nearly always succeeds. However, it is
generally the slowest method so in SIMetrix it is, by default, attempted last.

Although pseudo transient analysis is very powerful it is not completely infallible. Its
Achilles Heel is oscillation. Because a transient analysis is being performed it is
possible for the circuit to oscillate. If this happens, pseudo transient analysis can end
up going on forever without ever finding a stable solution. In our experience, however,
this is actually rare. A number of steps are taken to damp oscillators so that even
circuits that are designed to oscillate still succeed with pseudo transient analysis.

SIMetrix provides a number of facilities to inhibit circuit oscillation during pseudo


transient analysis. These are described in “Pseudo Transient Analysis” on page 258.

Controlling DC Method Sequence


You may have a circuit that only succeeds with - say - pseudo transient analysis and so
attempting the other methods just wastes time. In this situation, you can force the
simulator to attempt this method first, or even exclusively. To do this you need to set
the two simulator options noOpiter and dcopSequence. noOpiter inhibits the first
method (junction initialised iteration) while dcopSequence controls which and what
order the remaining methods are attempted. The value of dcopSequence consists of any
combination of SOURCE, GMIN, JUNCGMIN and PTA separated by the pipe
symbol: '|'. SOURCE, GMIN, JUNCGMIN and PTA refer respectively to ‘source
stepping’, ‘DIAG GMIN stepping’, ‘Junction GMIN stepping’ and ‘pseudo transient
analysis’. The order in which these words appear in the value of dcopSequence,
determines the order in which the corresponding methods will be attempted. So for
example:

.OPTIONS NOOPITER DCOPSEQUENCE=PTA|GMIN

will force pseudo transient analysis to be attempted first followed by GMIN stepping.
Junction initialised iteration and source stepping won't be attempted at all.

Singular Matrix Errors


A singular matrix error occurs when the circuit does not have a unique and finite
solution. For example, a circuit containing a floating capacitor does not have a unique
DC solution as the capacitor can be at any voltage. Also circuits with shorted
inductors, voltage sources or a combination of both will fail with this error.

If you get this error, you must first check your circuit. The simulator will tell you
where the problem is either as a node name or a device name.

If you think you circuit is OK then it is possible that the error is occurring because
during the course of iterating to a solution, some node voltages or device currents
reached very high values and the limited accuracy of the machine made it seem that the
matrix was singular. This can happen with junction initialised iteration. If this is the
case, try setting the option:

.OPTIONS NOOPITER

This will inhibit this mode and the simulator will start with source stepping. This
method, and the others that follow, don't generally suffer from this problem.

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Note that the simulation will abort if a singular matrix is detected in junction initialised
iteration. It will not automatically attempt the other methods. This is because, by far
the most common reason for singular matrices is circuit error.

Transient Analysis - ‘Time step too small’ Error


The message:

Timestep too small

is not actually due to non-convergence. It means that, because of the nature of your
circuit, to achieve the required accuracy, a time step smaller than the minimum
permissible was needed. This can happen if you perform a very long transient analysis
on a circuit with relatively short time constants. If you get this message, you can try
reducing the minimum time step with the MinTimeStep simulator option. The default
value for MinTimeStep is 1e-9*max time step and the max time step defaults to (Tstop-
Tstart)/50 where Tstop and Tstart are respectively the stop and start times of the
transient analysis. This option can be set in the user interface. See “Time Step” on
page 175 of the User’s Manual

Accuracy and Integration Methods

A Simple Approach
The accuracy of the simulation can be a complicated subject. So we will start with
simple advice. If you wish to increase the accuracy of a simulation, reduce the value of
RELTOL. This defaults to 0.001 so to reduce it to say 1e-5 add the following line to the
netlist:

.OPTIONS RELTOL=1e-5

(The setting of RELTOL is supported by the front end. See User's Manual for details.)

The simulation will run slower. It might be a lot slower it might be only slightly slower.
In very unfortunate circumstances it might not simulate at all and fail with a
convergence error.

Conversely, you can speed up the simulation by increasing RELTOL, but we don't
recommend it. Increasing RELTOL beyond its default value often degrades accuracy to
an unacceptable level.

To increase speed with a reasonably controlled loss of precision, increase POINTTOL


to 0.1 or even 1.0 but no higher.

Iteration Accuracy
For DC and transient modes, the simulator essentially makes an approximation to the
true answer. For DC analysis an iterative method is used to solve the non-linear
equations which can only find the exact answer if the circuit is linear. The accuracy of
the result for non-linear circuits is determined by the number of iterations; accuracy is
improved by performing more iterations but obviously this takes longer. In order to

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control the number of iterations that are performed an estimate is made of the error by
comparing two successive iterations. When this error falls below a predetermined
tolerance, the iteration is deemed to have converged and the simulator moves on the
next step or completes the run. Most SPICE simulators use something similar to the
following equations to calculate the tolerance:

For voltages:
TOL = RELTOL * instantaneous_value + VNTOL

For currents:
TOL = RELTOL * instantaneous_value + ABSTOL

"instantaneous_value" is the larger of the current and previous iterations. VNTOL has
a default value of 1µV so for voltages above 1mV, RELTOL dominates. ABSTOL has
a default of 1pA so for currents above 1nA, RELTOL dominates.

The above method of calculating tolerance works fine for many circuits using the
default values of VNTOL and ABSTOL. However, SPICE was originally designed for
integrated circuit design where voltages and currents are always small, so the default
values of ABSTOL and VNTOL may not be appropriate for - say - a 100V 20A power
supply. Suppose, that such a PSU has a current that rises to 20A at some point in the
simulation, but falls away to zero. When at 20A it has a tolerance of 20mA but when it
falls to zero the tolerance drops to ABSTOL which is 1pA. In most situations the 1pA
tolerance would be absurdly tight and would slow down the simulation. Most other
SPICE products recommend increasing ABSTOL and VNTOL for PSU circuits and
indeed this is perfectly sound advice. However, In SIMetrix the tolerance equation has
been modified to make this unnecessary in most cases. Here is the modified equation:

For voltages:
TOL = RELTOL * MAX( peak_value * POINTTOL, instantaneous_value ) + VNTOL

For currents:
TOL = RELTOL * MAX( peak_value * POINTTOL, instantaneous_value ) +
ABSTOL

peak_value is the magnitude of the largest voltage or current encountered so far for the
signal under test. POINTTOL is a new tolerance parameter and has a default value of
0.001. So for the example we gave above, peak_value would be 20 and when
instantaneous_value falls to zero the tolerance would be:

0.001 * MAX(20 * 0.001, 0) + 1p = approx. 20µA

20µA is a much more reasonable tolerance for a signal that reaches 20A.

The above method has the advantage that it loosens the tolerance only for signals that
actually reach large values. Parts of a circuit that only see small voltages or currents -
such as the error amplifier of a servo-controlled power supply - would still be
simulated with appropriate precision.

POINTTOL can be increased to improve simulation speed. It is a more controlled


method than increasing RELTOL. POINTTOL can be raised to 0.1 or even 1.0 but
definitely no higher than 1.0.

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Time Step Control


The tolerance options mentioned above also affect the time step control algorithm used
in transient analysis. In SIMetrix, there are three mechanisms that control the time
step, one of which has to be explicitly enabled. These are:

1. Iteration time step control


2. LTE time step control
3. Voltage delta limit
Item 3 above is inactive unless explicitly enabled using the MAXVDELTAREL option
setting. See below for details.

Iteration Time Step Control

Iteration control reduces the time step by a factor of 8 if convergence to the specified
accuracy cannot be achieved after 10 iterations. (10 by default but can be changed with
ITL4 option). If convergence is successful, the time step is doubled. As this
mechanism is controlled by the success or otherwise of the iteration it is also affected
by the same tolerance options described in the above section about iteration accuracy.

LTE Time Step Control

The theory behind this method is beyond the scope of this manual but essentially it
controls the accuracy of the numerical integration method used to model reactive
devices such as inductors and capacitors. These devices are governed by a differential
equation. It is not possible in a non-linear circuit to solve these differential equations
exactly so a numerical method is used and this - like the iterative methods used for
non-linear devices - is approximate. In the case of numerical integration, the accuracy
is determined by the time step. The smaller the time step the greater the accuracy but
also the longer the simulation time.

The accuracy to which capacitors are simulated is controlled by RELTOL, POINTTOL


and two other options namely TRTOL and CHGTOL. The latter is a charge tolerance
and has a similar effect to VNTOL and ABSTOL but instead represents the charge in
the capacitor. It's default value is 1e-14 which, like ABSTOL and VNTOL is
appropriate for integrated circuits but may be too low for PSU circuits with large
capacitors. However, the peak detection mechanism controlled by POINTTOL
described in the above section also works for the LTE time step control algorithm and
it is therefore rarely necessary to alter CHGTOL.

TRTOL is a dimensionless value and has a default value of 7. It affects the overall
accuracy of the numerical integration without affecting the precision of the iteration.
So reducing TRTOL will increase the accuracy with which capacitors and inductors are
simulated without affecting the accuracy of the iterative method used to simulate non-
linear elements. However, in order for the simulation of reactive devices to be
accurate, the non-linear iteration must also be accurate. So, reducing TRTOL much
below unity will result in a longer simulation time but no improvement in precision.
Increasing TRTOL to a large value, however, may be appropriate in some
circumstances where the accuracy to which reactive devices are simulated is not that
important. This may be the case in a circuit where there is an interest in the steady state
but not in how it was reached.

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Inductors are controlled by the same tolerances except CHGTOL is replaced by


FLUXTOL. This defaults to 1e-11.

The default LTE time step algorithm used in SIMetrix is slightly different to that used
by standard SPICE. The standard SPICE variant is also affected by ABSTOL and
VNTOL. The SIMetrix algorithm controls the time step more accurately and as a result
offers better speed-accuracy performance.

Voltage Delta Limit

This places a limit on the amount of change allowed in a single timestep for each node.
This limit is governed by the option setting MAXVDELTAREL and
MAXVDELTAABS and is included to overcome a problem that can cause false
clocking of flip-flops. The limit can be calculated from:

MAXVDELTAABS + MAXVDELTAREL*(node_voltage)

where node_voltage is the larger of the node voltage at current time step and the node
voltage at the previous time step. The above is calculated for all voltage nodes. If the
change in voltage exceeds this limit, the time step is cut back.

The above mechanism is not enabled if MAXVDELTAREL is zero or less and


MAXVDELTAREL is zero by default.

Setting MAXVDELTAREL to a value of about 0.4 will usually fix problems of false
clocking in flip-flops. However, this will slow down the simulation slightly and it is
not recommended that this setting is used in circuits that do not contain flip-flops.

Accuracy of AC analyses
The small-signal analysis modes .AC, .TF and .NOISE do not use approximate
methods and their accuracy is limited only by the precision of the processor's floating
point unit. Of course the DC operating point that always precedes these analysis modes
is subject to the limitations described above. Also, the device models used for non-
linear devices are also in themselves approximations. So these modes should not be
seen as exact but they are not affected by any of the tolerance option settings.

Summary of Tolerance Options

RELTOL

Default = 0.001. This affects all DC and transient simulation modes and specifies the
relative accuracy. Reduce this value to improve precision at the expense of simulation
speed. We do not recommend increasing this value except perhaps to run a quick test.
In any case, you should never use a value larger than 0.01.

POINTTOL

Proprietary to SIMetrix. Default = 0.001. Can increase to a maximum of 1.0 to


improve speed with loss of precision. Reduce to 0 for maximum accuracy but note this
may just slow down the simulation without really improving precision where it is
needed.

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ABSTOL

Default = 1pA. This is an absolute tolerance for currents and therefore has units of
Amps. This basically affects the tolerance for very low values of current. Sometimes
worth increasing to resolve convergence problems or improve speed for power circuits.

VNTOL

Default = 1µV. Same as ABSTOL but for voltages.

TRTOL

Default = 7. This is a relative value and affects how accurately charge storage elements
are simulated. Reduce it to increase accuracy of reactive elements but there is no
benefit reducing below about 1.0. In circuits where there is more interest in the steady
state rather than how to get there, simulation speed can be improved by increasing this
value.

CHGTOL

Default = 1e-14. Minimum tolerance of capacitor charge. Some convergence and speed
improvement may be gained by increasing this for circuits with large capacitors.
Generally recommended to leave it alone.

FLUXTOL

Default = 1e-11. Same as CHGTOL except applied to inductors.

Integration Methods - METHOD option


SIMetrix, along with most other SPICE products use three different numerical
integration methods to model reactive elements such as capacitors and inductors.
These are Backward Euler, Trapezoidal Rule and Gear. Backward Euler is used
unconditionally at various times during the course of a simulation but at all other times
the method used is controlled by the METHOD option (as long as ORDER is set to 2
or higher - see below).

The METHOD option can be set to TRAP ( trapezoidal - the default) or GEAR. Gear
integration can solve a common problem whereby the solution seems to oscillate
slightly. An example is shown below.

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1: :q1#b 2: tran2:q1#b

6.5

5.5

5
µA
4.5

3.5

3.8 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6

Time/µSecs 200nSecs/div

The grey curve was simulated with the default trapezoidal integration method whereas
the black used Gear integration. Note that gear integration introduces a slight
overshoot. This is a common characteristic. To find out whether such overshoots are a
consequence of the integration or are in fact a real circuit characteristic, you should
simulate the circuit with much smaller values of RELTOL (see above). It is also
suggested that you switch back to trapezoid integration when using tight tolerances;
the oscillating effect shown above will vanish if the tolerance is tight enough.

Note, you should not use Gear integration if you are simulating strongly resonant
circuits such as oscillators. Gear integration introduces a numerical damping effect
which will cause resonant circuits to decay more rapidly than they should. For
example:

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20

10

-10

-20

-30

20

10

-10

-20

-30
0 2 4 6 8 10

Time/µSecs 2µSecs/div

The above curves are the result of simulating a simple LC circuit that is completely
undamped. The top trace was the result of Gear integration and the bottom, trapezoidal.
The bottom curve is correct and agrees with theory. The top curve is inaccurate. If the
analysis was done with Gear integration but with a smaller value of RELTOL, the
damping effect would be less, so for all methods the result is ultimately accurate if the
tolerance is made small enough. But trapezoidal gives accurate results without tight
values of RELTOL.

ORDER option

This defaults to 2 and in general we recommend that it stays that way. Setting it to 1
will force Backward Euler to be used throughout which will degrade precision without
any speed improvement. It can be increased up to a value of 6 if METHOD=GEAR but
we have not found any circuits where this offers any improvement in either speed or
precision.

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Chapter 9 Digital Simulation

Overview
As well as an analog simulator, SIMetrix incorporates an event driven digital simulator
tightly coupled to the analog portion. This system can rapidly and accurately simulate
mixed signal circuits containing both analog and digital components. Of course, an
analog only simulator can simulate a mixed signal circuit using digital models
constructed from analog components, but this approach is slow. The advantage of this
mixed-mode approach is that it is dramatically faster, typically in the order of 100
times for pure digital circuits.

The SIMetrix mixed mode simulator is based on the XSPICE system developed by the
Georgia Technical Research Institute. Although based on XSPICE, SIMetrix features
many enhancements over the original system. See “Enhancements over XSPICE” on
page 297 for details of these improvements.

If you only use digital models supplied in the device library, then you don't need to
know much about the digital simulator in order to use it. Just select the devices you
need from the parts browser and simulate in the normal way. This chapter describes
some of the inner workings of the simulator including how it interfaces to the analog
system. More importantly, perhaps, this chapter also describes how you can design
your own digital models.

Logic States
The digital simulator is described as ‘12-state’ which means that a digital signal can be
in 1 of 12 states. These 12 states are combined from 3 levels and 4 strengths as follows:

Logic levels Strengths

HIGH STRONG
LOW RESISTIVE
UNKNOWN HI-IMPEDANCE
UNDETERMINED

Logic levels HIGH and LOW are self-explanatory. UNKNOWN means the signal
could be either HIGH or LOW but which is not known at this stage. The start up state
of a flip-flop is an example of an UNKNOWN state. Strength refers to the driving
force behind the signal. STRONG is the highest with HI-IMPEDANCE the lowest. It
is used to resolve conflicts when two outputs are connected together. For example
consider a LOW-RESISTIVE signal (as possessed by a pull-down resistor) connected
to a HIGH-STRONG signal There is a conflict between the two logic levels but as they
are different strengths, the stronger wins and therefore the resulting level is HIGH.

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State resolution table


The following table defines how a state is decided when two outputs are connected:

0S 1S XS 0R 1R XR 0Z 1Z XZ 0U 1U XU
0S 0S XS XS 0S 0S 0S 0S 0S 0S 0S XS XS
1S XS 1S XS 1S 1S 1S 1S 1S 1S XS 1S XS
XS XS XS XS XS XS XS XS XS XS XS XS XS
0R 0S 1S XS 0R XR XR 0R 0R 0R 0U XU XU
1R 0S 1S XS XR 1R XR 1R 1R 1R XU 1U XU
XR 0S 1S XS XR XR XR XR XR XR 1U XU XU
0Z 0S 1S XS 0R 1R XR 0Z XZ XZ 0U XU XU
1Z 0S 1S XS 0R 1R XR XZ 1Z XZ XU 1U XU
XZ 0S 1S XS 0R 1R XR XZ XZ XZ XU XU XU
0U 0S XS XS 0U XU XU 0U XU XU 0U XU XU
1U XS 1S XS XU 1U XU XU 1U XU XU 1U XU
XU XS XS XS XU XU XU XU XU XU XU XU XU

0S = LOW-STRONG
1S = HIGH-STRONG
XS = UNKNOWN-STRONG
0R = LOW-RESISTIVE
1R = HIGH-RESISTIVE
XR = UNKNOWN-RESISTIVE
0Z = LOW-HI-Z
1Z = HIGH-HI-Z
XZ = UNKNOWN-HI-Z
0U = LOW-UNDETERMINED
1U = HIGH-UNDETERMINED
XU=UNKNOWN-UNDETERMINED

Analog to Digital Interfaces


At the simulator level, there are two types of node namely analog and digital and they
cannot be connected together. At the netlist level it is possible to connect analog
components to digital outputs and inputs. When SIMetrix sees an analog component
connected to a digital signal, it automatically interconnects them using an interface
bridge. It will use an analog-digital bridge to connect an analog signal to a digital input
and a digital-analog bridge to connect to a digital output. If you connect an analog
component to a signal which connects to both digital inputs and outputs both types of
bridge will be used and the digital inputs and outputs will be separated from each other
as illustrated in the following diagrams.

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Chapter 9 Digital Simulation

VCC

HC00 U4
D SET Q HC74

U3 QN
RST

VP

X1

TL072

VN

Circuit entered in schematic editor

Analog-digital bridges implicitly connected by simulator


VCC

HC00 U4
D_A A_D D SET Q HC74

U2 U1
U3 QN
RST

VP

X1

TL072

VN

Circuit that is actually simulated

One problem with the above approach is that the A-D and D-A bridges introduce an
additional delay to the signal path which would therefore alter the performance of the
digital system even if the analog node does not present any significant load. This is
overcome by assigning a negative load to the input of the digital bridge which in effect
reduces the delay of the driving gate. In the above example U2 has a negative input
load which reduces the delay of U3.

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How A-D Bridges are Selected


When SIMetrix implicitly places an AD bridge in a circuit, it must choose an
appropriate model for the bridge. All AD bridges are based on DAC_BRDIGE and
ADC_BRIDGE models described in “Analog-Digital Interface Bridge”, and “Digital-
Analog Interface Bridge” starting page 172. The model is chosen according to the
FAMILY parameter assigned to the digital device to which the bridge is connected.
The FAMILY parameter along with the associated OUT_FAMILY and IN_FAMILY
parameters are explained more fully in “Logic Families” on page 276. Basically the
FAMILY parameter specifies the logic family to which the device belongs e.g. ‘HC’
for high speed CMOS.

The name of the model used to interconnect digital to analog is always of the form:

family_name_dac

and to interconnect analog to digital

family_name_adc

For example if the family name is HC the D-A bridge is called HC_DAC. There is a
selection of A-D and D-A bridges in the model library supplied with SIMetrix. (In
[Link]).

Logic Families
The digital simulator only knows about the 12 logic states described in section “Logic
States” on page 273, It doesn't know anything about threshold voltages or output
impedances and consequently cannot directly handle the effects of interconnecting
devices from different logic families. It does however feature a mechanism of
determining the level of compatibility between families and will raise an error if
incompatible devices are interconnected. For example, ECL and high speed CMOS
operate at completely different thresholds and cannot be connected except via a special
interface gate. SIMetrix knows this so that if you attempt to connect such devices, an
error message will be displayed and the simulation will not run. Conversely, it is
perfectly OK to drive an LSTTL input from an HC output and SIMetrix will operate
normally if you do so. If you drive an HC input from an LSTTL output SIMetrix will
issue a warning as, although this may work in practice, it cannot be guaranteed to do so
under all circumstances.

Another problem arises when connecting inputs from different logic families together.
SIMetrix deals with this by treating groups of inputs as if they were all from the same
logic family provided they are compatible. This selected logic family is then used to
resolve any output-input conflict as described above. It is also used to select an analog-
digital interface bridge as described in “Analog to Digital Interfaces” on page 274

Groups of outputs from different families are dealt with in the same way as inputs
described above.

SIMetrix knows how to resolve these situations by referring to a set of three tables
called the ‘Logic Compatibility Tables’. A standard set of tables is built in to the
simulator but they can also be redefined. See “Logic Compatibility Tables” on
page 277.

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Chapter 9 Digital Simulation

Logic Family Model Parameters.


There are three model parameters used to specify the logic family to which a device
belongs. These are:

Parameter name Description

IN_FAMILY Family for inputs


OUT_FAMILY Family for outputs
FAMILY Family for both inputs and outputs if IN_FAMILY/
OUT_FAMILY not specified

The parameters are text strings. Any name may be used that is defined in the logic
compatibility tables but you must not use the underscore character in a family name.
The families supported by the internal tables are listed in “Supported Logic Families”
on page 279

The underscore character is used to define a sub-family that has the same
characteristics as the main family as far as logic compatibility is concerned but which
will call a different interface bridge when connected to an analog node. This is used to
define schmitt trigger devices such as the 74HC14. In an all-digital circuit this behaves
exactly like a normal inverter with a slightly longer delay. When the input is connected
to an analog system an interface bridge with the appropriate hysteresis is called up
instead of the normal interface.

Logic Compatibility Tables


As explained in the above section, there are three of these. Each table has a row and
column entry for each of the logic families supported. These are:

• Resolve In-Out table. Decides what to do when an output is connected to an input


from a different family. Possible responses are OK, ERR (error - not permissible)
and WARN (OK but give warning to user)
• Resolve In-In table. Decides how to treat the situation when two inputs from
dissimilar families are connected. As described above SIMetrix must treat a
group of inputs connected together as all belonging to the same logic family for
the purpose of deciding an analog interface bridge (see “Analog to Digital
Interfaces” on page 274) and to resolve in-out family conflicts. Possible
responses are ROW, COLUMN and ERR. ROW means that the family defining
the ROW entry has priority and COLUMN means that the family defining the
COLUMN entry has priority. ERR means that it is an error to interconnect these
two inputs. You can also enter OK which signifies that the two families are
equivalent and it doesn't matter which is chosen. Currently this response is
exactly equivalent to ROW.
• Resolve Out-Out table. Works the same way as the Resolve In-In table but used
to define output priorities.
The tables can be redefined by specifying a file containing the new definition. If
running in GUI mode a new file can be specified at any time using the
ReadLogicCompatibility command (see User's Manual or Script Reference Manual).

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It can also be specified as the configuration setting CompatTable. The format of this
file is described in the following section.

Logic Compatibility File Format


For an example of a compatibility table, see the file [Link] which you will
find in the SCRIPT directory. This file is actually identical to the built-in definitions
except for the UNIV family which cannot be redefined.

The file format consists of the following sections:

1. Header
2. In-Out resolution table
3. In-In resolution table
4. Out-Out resolution table

Header

The names of all the logic families listed in one line. The names must not use the
underscore ('_') character.

In-Out resolution table:

A table with the number of rows and columns equal to the number of logic families
listed in the header. The columns represent outputs and the rows inputs. The entry in
the table specifies the compatibility between the output and the input when connected
to each other. The entry may be one of three values:

Value Meaning

OK Fully compatible
WARN Not compatible but would usually function. Warn user
but allow simulation to continue.
ERR Not compatible and would never function. Abort
simulation.

In-In resolution table

A table with the number of rows and columns equal to the number of logic families
listed in the header. Both column and rows represent inputs. The table defines how
inputs from different families are treated when they are connected. The entry may be
one of four values:

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Chapter 9 Digital Simulation

Value Meaning

ROW Row take precedence


COL Column takes precedence
OK Doesn't matter. (Currently identical to ROW)
ERR Incompatible, inputs cannot be connected.

Out-out resolution table


A table with the number of rows and columns equal to the number of logic families
listed in the header. Both column and rows represent outputs. The table defines how
outputs from different families are treated when they are connected. The entry may be
one of four values:

Value Meaning

ROW Row take precedence


COL Column takes precedence
OK Doesn't matter. (Currently identical to ROW)
ERR Incompatible, outputs cannot be connected.

Supported Logic Families


The following logic families are supported by the internal Logic Compatibility Tables.

Family name Description

TTL TTL - 74 series


HC High speed CMOS - 74HC series
HCT TTL compatible High speed CMOS - 74HCT series
FAST FAST TTL - 74F series
LS Low power schottky TTL - 74LS series
ALS Advanced low power schottky TTL - 74ALS series
4000-5 4000 series CMOS - 5V operation
4000-10 4000 series CMOS - 10V operation
4000-15 4000 series CMOS - 15V operation
ECL10K ECL 10K series
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Family name Description

ECL10KE ECL Eclipse series


AC Advanced CMOS - 74AC series
ACT TTL compatible Advanced CMOS - 74ACT series
FORCE5 Used for 5V VCC rails.
UNIV Universal family - see below

Universal Logic Family


The internal tables support the concept of a ‘Universal logic family’. This is called
UNIV and can connect to any logic family without error. This is the default if no
FAMILY parameter is supplied.

Internal Tables
The internal tables are documented in the on-line help system. Refer to topic “Internal
Tables” which is listed as a keyword in the index tab.

Load Delay

Overview
The digital simulator includes mechanisms to model the delay introduced when an
output is loaded. Two sources of delay are provided for, namely ‘input delay’ and ‘wire
delay’. Input delay is determined by the capacitive input while wire delay is an
additional delay caused by the capacitance of the interconnection.

Both input delay and wire delay are affected by the driving outputs ‘resistance’.

Output Resistance
Most devices that have digital outputs have three parameters to define output
resistance. Note that the resistance we are referring to here is not an actual analog
resistance but a conceptual value that when multiplied by load capacitance provides a
delay value.

The three output resistance parameters are: out_res, out_res_pos, out_res_neg.


out_res_pos and out_res_neg define the output resistance for positive and negative
transitions respectively. out_res provides a default value for out_res_pos and
out_res_neg.

Input Delay
Most digital inputs include an ‘input_load’ capacitance parameter. The total input
delay is obtained by multiplying the sum of all connected input capacitances by the
driving output’s output resistance as described above.

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Wire Delay
Wire delay is derived from the number of connected inputs following a non-linear
relationship defined in a look-up table.

Defining Look-up Table

The wire delay look-up table must be defined in a file containing pairs of values with
one pair per line. The first value in the pair is the number of connections and the
second is the capacitance. For example:

0 0
1 0
2 1e-12
5 10e-12
10 30e-12

Linear interpolation is used to derive missing values.

To specify the wire table used for a simulation, add the line:

.OPTIONS WireTable=filename

where filename is the path of the wire table file.

Digital Model Libraries

Using Third Party Libraries


The SIMetrix digital simulator is based on XSPICE and all the XSPICE digital devices
have been implemented. Virtually all of these have been enhanced in a number of ways
but all remain backward compatible with the original XSPICE. Consequently any
100% XSPICE compatible digital model will work with SIMetrix.

Arbitrary Logic Block - User Defined Models

Overview
The arbitrary logic block is an internal component that can be defined to perform any
logic function. Using a simple descriptive language it is possible to define
combinational logic elements, synchronous and asynchronous registers as well as look-
up table (ROMs) and arrays (RAMs).

Each ALB device is defined as a normal .MODEL control which refers to a separate
file containing the logic description. This section is mostly concerned with the
descriptive language used in the definition file.

An Example
We start with a simple example. The following is a description of a simple 8 bit
synchronous counter. (This definition would be put into a file referred to in a .MODEL

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control. This is described later). A circuit using this model is supplied as an example.
See EXAMPLES\ALB_Examples\[Link]

PORT (DELAY = 10n) CountOut out[0:7] ;


EDGE (DELAY=5n, WIDTH=8, CLOCK=in[0]) Count ;
Count = Count + 1 ;
CountOut = count ;

We will go through this line by line.

The first line:

PORT (DELAY = 10n) CountOut out[0:7] ;

is a PORT statement and in this case defines the characteristics of an output.

(DELAY = 10n)

says that the output delay is 10nS that is the actual output pins will change state 10nS
after the output is assigned.

CountOut

names the output CountOut.

out[0:7]

defines the port as an output and specifies the actual pins used on the device. This
specifies the first 8 pins on the output port. There are two sets of pins on an ALB one
assigned for inputs and referred to as "in[a:b]" and the other assigned for outputs and
referred to as "out[a:b]". The line ends in a semi-colon which terminates the statement.
All statements must end in a semi-colon.

The next line:

EDGE (DELAY=5n, WIDTH=8, CLOCK=in[0]) Count ;

defines an edge triggered register.

CLOCK=in[0]

specifies the pin used for the clock (it must always be an input pin). This is always
positive edge triggered.

DELAY=5n

This is the clock to output delay. (See illustration below)

WIDTH=8

This specifies the width of the register i.e. 8 bits

The next line:

Count = Count + 1 ;

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defines the operation to be performed at each clock edge. In this case the value in the
register is simply incremented by one. When it reaches 255 it will reset to 0.

The final line

CountOut = count ;

defines what appears at the output. This says that the output equals the count register.

The following diagram illustrates the internal structure of the counter.

Edge triggered register Output stage


Delay=5n Delay=10n

CLOCK IN D0 A0 D0

D1 A1 D1

D2 A2 D2

D3 A3 D3

D4 A4 D4

D5 A5 D5

D6 A6 D6

D7 A7 D7

Reset Count at 200

We will now make a small modification to the counter so that the counter only counts
up to 199 before resetting back to zero. Change the line:

Count = Count + 1 ;
to:
Count = Count==199 ? 0 : Count + 1 ;

This says ‘If the count equals 199 set to zero otherwise increment by one’. As before,
this will happen on each clock edge.

Add an Asynchronous Reset


The logic definition language supports the addition of asynchronous controls to
synchronous registers. Here we will add an asynchronous reset. The complete
definition becomes:

PORT (DELAY = 10n) CountOut out[0:7] ;


PORT Reset in[1] ;

EDGE (DELAY=5n, WIDTH=8, CLOCK=in[0]) Count ;

Count := !Reset ? 0 ;
Count = Count==199 ? 0 : Count + 1 ;

CountOut = count ;

To add the reset signal we have to add two lines to the definition. The first:

PORT Reset in[1] ;

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defines the signal pin to be used for the reset and the second:

Count := !Reset ? 0 ;

defines the action to be taken. This is an asynchronous action statement. The '!' means
NOT so the line says ‘If Reset is NOT TRUE (i.e. low) set the count to zero otherwise
do nothing’. Asynchronous action statements are always of the form:

register_name := condition ? action ;

The ':' signifies that the statement is asynchronous and that the action should happen
immediately.

Example 2 - A Simple Multiplier


PORT (DELAY=10n) MultOut out[0:7] ;
PORT in1 in[0:3] ;
PORT in2 in[4:7] ;

MultOut = in1*in2 ;

The above defines a simple combinational circuit, that of a 4X4 digital multiplier. The
inputs in1 and in2 are treated as 4 bit unsigned values so if both are zero the output will
be zero and if both are 1111 (i.e. 15) the result will be 11100001 (i.e. 225). See the
circuit EXAMPLES\ALB_Examples\[Link].

Example 3 - A ROM Lookup Table


The following definition is that of a lookup table to define a sine wave:

PORT (DELAY=10n) ROMout out[0:7] ;


PORT input in[0:7] ;

READONLY (WIDTH=8) ROM[256] =

128, 131, 134, 137, 140, 143, 146, 149, 152, 156, 159, 162,
165, 168, 171, 174, 176, 179, 182, 185, 188, 191, 193, 196,
199, 201, 204, 206, 209, 211, 213, 216, 218, 220, 222, 224,
226, 228, 230, 232, 234, 236, 237, 239, 240, 242, 243, 245,
246, 247, 248, 249, 250, 251, 252, 252, 253, 254, 254, 255,
255, 255, 255, 255, 255, 255, 255, 255, 255, 255, 254, 254,
253, 252, 252, 251, 250, 249, 248, 247, 246, 245, 243, 242,
240, 239, 237, 236, 234, 232, 230, 228, 226, 224, 222, 220,
218, 216, 213, 211, 209, 206, 204, 201, 199, 196, 193, 191,
188, 185, 182, 179, 176, 174, 171, 168, 165, 162, 159, 156,
152, 149, 146, 143, 140, 137, 134, 131, 128, 124, 121, 118,
115, 112, 109, 106, 103, 99, 96, 93, 90, 87, 84, 81, 79, 76,
73, 70, 67, 64, 62, 59, 56, 54, 51, 49, 46, 44, 42, 39, 37,
35, 33, 31, 29, 27, 25, 23, 21, 19, 18, 16, 15, 13, 12, 10,
9, 8, 7, 6, 5, 4, 3, 3, 2, 1, 1, 0, 0, 0, 0, 0, 0, 0, 0, 0,
0, 0, 1, 1, 2, 3, 3, 4, 5, 6, 7, 8, 9, 10, 12, 13, 15, 16,
18, 19, 21, 23, 25, 27, 29, 31, 33, 35, 37, 39, 42, 44, 46,
49, 51, 54, 56, 59, 62, 64, 67, 70, 73, 76, 79, 81, 84, 87,
90, 93, 96, 99, 103, 106, 109, 112, 115, 118, 121, 124 ;

ROMout = ROM[input] ;

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See the example circuit EXAMPLES\ALB_Examples\[Link]

Example 4 - D Type Flip Flop


The following is the definition for the 74X74 Dtype flip flop supplied with the
standard SIMetrix model library. This model is somewhat more complicated as it
models a number of timing artefacts such as setup time and minimum clock width.
Each line below has been annotated to describe its function. Full details are explained
in the following sections.

// Input port definitions


PORT D in[0] ; // D input
PORT CK in[1] ; // Clock
PORT SR in[2:3] ; // Set/reset inputs. r bit 3 s bit 2

PORT out out[0:1] ; // Outputs Q and !Q

// Edge triggered register.


// HOLD is hold time i.e. time after clock edge that data
// must remain stable. Setup time is implemented by
// delaying the D input

// MINCLOCK is minimum clock width.


// USER[n] references values supplied in the .MODEL control
// The final '=2' initialise the register with the value 2
// i.e. Q=0 and Q!=1
EDGE (WIDTH=2, DELAY=USER[4], HOLD=USER[2], MINCLOCK=USER[3],
CLOCK=in[1]) DTYPE=2;

// COMB defines a combinational register. This is effectively


// a delay element. These delay the D input (to implement
// setup time) and the set/reset inputs to implement minimum
// set and reset times
COMB (DELAY=USER[0], WIDTH=1) D_DEL ;
COMB (DELAY=USER[1], WIDTH=2) SR_DEL ;

// These assign the combinational registers


SR_DEL = SR ;
D_DEL = D ;

// asynchronous action
DTYPE := SR_DEL==1||SR_DEL==2 ? (SR_DEL==2 ? 1 : 2) ;

// synchronous action
DTYPE = D_DEL ? 1 : 2 ;

// Both outputs are forced high if S and R are both active


// Output will be restored to previous value when one of
// S and R becomes inactive
out = SR_DEL==0 ? 3 : DTYPE ;

Device Definition - Netlist Entry & .MODEL Parameters

Netlist entry

Axxxx [ in_0 in_1 .. in_n ] [ out_0 out_1 .. out_n ] model_name

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+ : parameters

Connection details

Name Description Flow Type

in Input in d
out Output out d

Instance parameters

Name Description Type

trace_file Trace file string


user User device parameters real vector

Model format

.MODEL model_name d_logic_block parameters

Model parameters

Name Description Type Default Limits Vector


bounds

file Definition file name string none none n/a


def Definition string none none n/a
out_delay Default output delay real 1n 1e-12 - n/a

reg_delay Default internal real 1n 0-∞ n/a
register delay
setup_time Default level real 0 0-∞ n/a
triggered setup time
hold_time Default edge real 0 0-∞ n/a
triggered hold time
min_clock Default minimum real 0 0-∞ n/a
clock width
trace_file Trace log file string none n/a
user User defined real none none none
parameters vector
user_scale Scale of user values real 1 0-∞ n/a
input_load Input load value (F) real 1p none n/a

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Name Description Type Default Limits Vector


bounds

family Logic family string UNIV none n/a


in_family Input logic family string UNIV none n/a
out_family Output logic family string UNIV none n/a
out_res Digital output real 100 0-∞ n/a
resistance
min_sink Minimum sink real -0.001 none n/a
current
max_source Maximum source real 0.001 none n/a
current
sink_current Input sink current real 0 none n/a
source_current Input source current real 0 none n/a

Notes
Usually the logic block definition would be placed in a file referred in the FILE
parameter. Alternatively the definition may be placed directly in the .MODEL control
as the value of the DEF parameter. In this case the definition must be enclosed in
quotation marks (").

The USER_SCALE parameter scales all values found in the USER parameter.

Language Definition - Overview


The following sections describe the full details of the arbitrary logic block language.

All logic definitions are divided into two sections. The first contains the ports and
register definitions and the second section consists of the assignment statements. (The
first section can be empty in very simple cases).

Language Definition - Constants and Names


Constants follow the usual rules. Any decimal number with optional sign and exponent
or engineering suffix is permitted. In addition, numbers in hexadecimal are also
allowed. The format is the same as for the 'C' programming language i.e. prefixed with
'0X'. E.g.:

0X10 = 10 hex = 16.

Identifiers used for register, port and variable names must begin with an alphabetic
character or underscore and consist of alphanumeric characters and underscores.

Language Definition - Ports


Port statements define the inputs and outputs to the logic device. They are of the form

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PORT ( DELAY=output_delay) port_name OUT [ pin1| pin1:pin2 ]


or
PORT port_name IN|OUT [ pin1| pin1:pin2 ]

Ports define a label to a single pin or sequence of pins so that they can be treated as a
single entity in the remainder of the logic definition. In the case of outputs they can
optionally also define an output delay. (If this is not specified a default output delay
defined in the devices .MODEL control is used).

port_name Any name to reference the port. Must start with a letter or
underscore and consist only of letters numbers and underscores.
Names are not case sensitive.
pin1,pin2 Identifies pin or range of pins that port accesses. See next
section for more details.
output_delay Output delay in seconds. When an output port is assigned a
value, the actual output is updated after this delay has elapsed (+
any loading delay). You may use engineering units in the normal
way. E.g. 10n is 10e-9.

Relationship between ports, netlist entry and symbol definition

The netlist entry for an arbitrary logic block is of the form:

Axxx [ input_node_list ] [ output_node_list ] model_name

The pin numbers in the port statements above, i.e. pin1 and pin2 are the positions
within the input_node_list for input ports and output_node_list for output ports.

So if the netlist entry is:

A12 [ 1 2 3 4 ] [ A B C D ] ARB1

the port definition:

PORT output OUT[0:3] ;

assigns the label output to the netlist pins A B C and D. If, for example, the value 7
is evaluated and assigned to output, pins A B and C would be set to a logic '1' and
pin D would be set to a logic '0'. Pins 1 2 3 & 4 would be used for input ports in a
similar way.

The netlist entry relates directly to a symbol definition for an arbitrary logic block.
When defining a symbol to be used with an ALB you should observe the following
rules

• The first input pin's name and the first output pin's name should both be prefixed
with a '['.
• The last input pin's name and the last output pin's name should both be suffixed
with a ']'.

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• Use Property/Pin|Edit Pin Order… to define the pin order with input pins first
then output pins.
• You should assign a MODEL property with the value 'A'.

Language Definition - Registers and Variables


Registers are the main working elements of the arbitrary logic block. There are four
main types. These are:

• Edge triggered. The value of these change on the rising edge of an assigned
clock.
• Level triggered. The value of these change when an assigned enable is at a logic
'1' level.
• Combinational. The value of these change after a specified delay.
• Read-only. These are given a fixed value which cannot be changed. These would
usually be arranged in indexable arrays to implement a read only memory.
Edge and level triggered registers may be arranged in indexable arrays. Level or edge
triggered arrays form a read-write memory or RAM.

In addition to registers there are also local variables. These can be assigned a value that
can later be used in a register assignment.

All registers must be declared. Local variables are declared by simply assigning a
value to them.

The syntax for register declarations follow:

Edge Triggered Register Declaration

EDGE ( CLOCK=input_pin_spec
[, DELAY=reg_delay]
[, WIDTH=reg_width]
[, MINCLOCK=reg_minclock]
[, HOLD=reg_hold_time]
[, ASYNCDELAY=reg_asyncdelay]
[, BITWISE=0|1 ] ) name [[array_size]]
[ = initial_condition *[, initial_condition] ] ;

input_pin_spec This specifies which input pin is the clock and must be of the
form: IN[n] where n is a pin number. See “Relationship between
ports, netlist entry and symbol definition” on page 288 for
details on how pin numbers relate to netlist entries and symbol
definitions.
reg_delay Register delay in seconds. This is the delay between the clock
rising edge and the register value changing. You can use
engineering units in the normal way.
Default: REG_DELAY parameter in .MODEL control defines
default value. This is turn has a default value of 1nS.

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reg_width Register width in bits. This has a maximum of 32.


Default: 32
reg_minclock Minimum clock width. This must be less than or equal to
reg_delay. The register value will not update if the clock width
is less than this value.
Default: MIN_CLOCK parameter in .MODEL control defines
default value. This in turn has a default value of 0.
reg_hold_time Register hold time. This is the time that the input data (i.e.
assignment value) must remain stable after the clock edge, for
the new value to be accepted. If the BITWISE parameter is set
to '1' (which it is by default) the hold time is applied on a bit by
bit basis. That is any individual bit in the register that remains
stable during the hold period will attain the new value even if
other bits violate the hold time. If BITWISE is '0' then if a single
bit violates the hold time, the whole register will remain
unchanged even if some bits remain stable during the hold
period. Setting BITWISE to '0' saves system memory which can
be important for large arrays (i.e. RAMs).
Default: HOLD_TIME parameter in .MODEL control defines
default value. This in turn has a default of 0.
reg_asysncdelay Time the register takes to acquire a value set by an
asynchronous assignment. This must be less than or equal to
reg_delay.
Default: reg_delay
BITWISE value See reg_hold_time
Default: '1' for single registers, '0' for arrays.
name Register name.
array_size If specified, the register is arranged as an addressable array of
size array_size.
Default: 1
initial_condition Value assigned to register when simulation starts.
Default: 0
Notes:
To implement register setup time, assign a value to reg_hold_time equal to the sum of
the register setup and hold times then delay the input data by a period equal to the setup
time.

Level Triggered Register Declaration

LEVEL (CLOCK=input_pin_spec
[, DELAY=reg_delay]
[, WIDTH=reg_width]
[, SETUP=reg_setup_time]
[, ASYNCDELAY=reg_asyncdelay]
[, BITWISE=0|1 ] name [[array_size]]
[ = initial_condition *[, initial_condition]] ;

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input_pin_spec This specifies which input pin is the enable and must be of the
form: IN[n] where n is a pin number. See “Relationship between
ports, netlist entry and symbol definition” on page 288 for
details on how pin numbers relate to netlist entries and symbol
definitions.
reg_delay Register delay in seconds. If the enable is already high, this is
the time taken for the register to acquire new data. Otherwise it
is the delay between enable rising edge and the register value
changing. You can use engineering units in the normal way.
Default: REG_DELAY parameter in .MODEL control defines
default value. This is turn has a default value of 1nS.
reg_width Register width in bits. This has a maximum of 32.
Default: 32
reg_setup_time Register hold time. This is the time that the input data (i.e.
assignment value) must remain stable prior to an enable falling
edge, for the new value to be accepted. If the BITWISE
parameter is set to '1' (which it is by default) the setup time is
applied on a bit by bit basis. That is any individual bit in the
register that remains stable during the setup period will attain
the new value even if other bits violate the setup time. If
BITWISE is '0' then if a single bit violates the setup time, the
whole register will remain unchanged even if some bits remain
stable during the setup period. Setting BITWISE to '0' saves
system memory which can be important for large arrays (i.e.
RAMs).
Default: SETUP_TIME parameter in .MODEL control defines
default value. This in turn has a default of 0.
reg_asysncdelay Time the register takes to acquire a value set by an
asynchronous assignment. This must be less than or equal to
reg_delay.
Default: reg_delay
BITWISE value See reg_setup_time
Default: '1' for single registers, '0' for arrays.
name Register name.
array_size If specified, the register is arranged as an addressable array of
size array_size.
Default: 1
initial_condition Value assigned to register when simulation starts.
Default: 0

Combinational Register Declaration

COMB ( [, DELAY=reg_delay]
[, WIDTH=reg_width]
[, BITWISE=0|1 ] ) name [ = initial_condition ] ;

reg_delay Register delay in seconds. You can use engineering units in the
normal way. If BITWISE is '1' (the default) this delay is applied

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on a bit by bit basis. If BITWISE is '0' then the delay is applied


to the whole register. That is the output will not change until all
inputs have remained stable for the delay time. Setting
BITWISE to '0' is useful when using combinational registers to
implement asynchronous state machines as it eliminates race
conditions.
Default: REG_DELAY parameter in .MODEL control defines
default value. This is turn has a default value of 1nS.
reg_width Register width in bits. This has a maximum of 32.
Default: 32
name Register name.
initial_condition Value assigned to register when simulation starts.
Default: 0

Read-only Register Declaration

READONLY ([, WIDTH=reg_width] name[[array_size]]


[ = initial_condition *[, initial_condition]] ;

reg_width Register width in bits. This has a maximum of 32.


Default: 32
array_size If specified, the register is arranged as an addressable array of
size array_size.
Default: 1
name Register name.
initial_condition Value assigned to register when simulation starts.
Default: 0
Read-only registers are usually arranged as an addressable array. When reading a read-
only register, the value returned is the value defined by the initial conditions. As the
name implies it is not possible to assign read-only registers.

Language Definition - Assignments


Registers and output ports can be assigned using the assignment operator '='.
Assignment values can be constants, input ports, other registers, local variables or
expressions of any or all of these. Assignments are of the form:

register | output_port | OUT[pin1:pin2] | OUT[pin1] | local_var = expr ;


or
clocked_register[index] = expr ;

register Combinational, edge triggered or level triggered register name.


output_port Output port name
pin1, pin2 Output pin numbers. OUT[pin1:pin2] and OUT[pin1] allow
outputs to be assigned with having to declare them in a PORT

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statement.
local_var Any name not already used for a port or register. This defines
the value for a local variable that can be used in subsequent
expressions. A local variable may not be used in an expression
that precedes its definition.
expr Local variables, input ports, registers and constant values
combined using arithmetic, Boolean, bitwise Boolean, shift,
conditional and relational operators. See “Expression operators”
below for detailed documentation on all operators.
clocked_register Edge or level triggered register.
index Array index. This must be smaller than the array size. Arrays are
based at 0. That is the first element is zero and the last is (array
length-1).

Expression operators

The following table lists all operators available. These are listed in order of
precedence. Precedence determines the order of evaluation. For example in the
expression:

var1<var2 && var3<var4

The sub-expressions var1<var2 and var3<var4 are evaluated first and the result of that
those evaluations combined using && to yield the final result. This is because < has
higher precedence than &&. The precedence can be altered using parentheses in the
usual way.

Class Operators Description

Index [] E.g. var1[4]. Index operator to


access array element.
Unary +- Operator to single value e.g. -5
Arithmetic multiplicative */% Arithmetic multiply/divide/
modulus treating all values as
unsigned integers. % returns
remainder after division
Arithmetic additive +- Arithmetic operation treating all
values as unsigned integers
Shift << >> Shift-left and shift right. E.g. reg1
<< 2 will shift reg1 left by two bits
Relational < > <= >= If condition met result is 1
(=TRUE) otherwise result is zero
(=FALSE)

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Class Operators Description

Equality == <> != == means EQUAL


<> and != both mean NOT
EQUAL
Return 1 when condition met and
0 when condition is not met
Bitwise AND & Performs a Boolean AND bit by
bit
Bitwise XOR ^ Performs a Boolean exclusive
OR bit by bit
Bitwise OR | Performs a Boolean OR bit by bit
Logical AND && Returns 1 if both values are non-
zero (TRUE) otherwise returns
zero (FALSE)
Logical OR || Returns 1 if either value is non-
zero (TRUE) otherwise return
zero (FALSE)
Conditional expression cond ? res1 : Returns res1 if cond is non-zero
res2 (TRUE) otherwise returns res2

Example A<B ? 16 : 0

returns 16 if A is less than B


otherwise returns 0

Note that the operators and their precedence are a subset of those used in the 'C'
programming language with the exception of <>.

Controlling Output Enables

An output can be set into a high impedance state using a modification to an output port
variable. Use the suffix .EN after the output port or port identifier to signify that the
result of the expression should control the output enable. E.g. the following is
extracted from the 74XX244 definition:

PORT (DELAY=USER[0]) Output out[0:3] ;


[Link] = Out_En_Del ? 0 : 0xf ;

Examples
Y = !Enable ? A_Del != B_Del : 1 ;

If Enable is 0 then Y will be the result of A_Del != B_Del otherwise the result will be
1.

Shift = !Par_En_Del ? Par_Data_Del :(Shift<<1) | Ser_Data_Del;

This describes the action of a parallel loadable shift register.

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out[0]= !in[1]&!in[2] | in[1]&!in[2]&in[0] |


!in[1]&in[2]&in[0]

An example of referencing inputs and outputs directly without needing PORT


statements.

Language Definition - User and Device Values


Sometimes it is convenient to use the logic description to define the functionality of a
block but have the timing and other specifications specified separately. This is
achieved by USER and DEVICE values. USER values are specified in the .MODEL
control while DEVICE values are specified on the device at the netlist (or schematic
device) level. The values are referenced in the logic definition in the form:

USER[index]
and
DEVICE[index]

These can replace any constant value in an expression, register qualifier or port
qualifier. (Register and port qualifiers are the values in parentheses after the register/
port keyword. E.g. DELAY, HOLD, SETUP etc.).

To set USER values in a .MODEL control, assign the parameter USER. This is a vector
parameter, that is it can have any number of values and these must be enclosed in
square brackets '[' and ']'. For example:

.MODEL Counter8 d_logic_block file=counter_8.ldf


+ user=[10n, 5n]

The logic definition to which this model refers - counter_8.ldf - can use USER[0] and
USER[1] to refer to the values 10n and 5n respectively.

To set DEVICE values in a netlist, the netlist entry for the device must be appended
with:

: USER=[ values ]

For example:

A$U3 [clock] [Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7] Counter8 :


+ USER=[10n, 5n]

The logic definition for this device can use DEVICE[0] and DEVICE[1] to access the
USER values in the netlist i.e. 10n and 5n respectively. Always remember to include
the colon. This acts as a separator between the device name and any parameters.

Diagnostics: Trace File


In order to debug models, a tracing facility is provided. If the .MODEL TRACE_FILE
parameter or instance parameter of the same name is specified, a file will be created
which lists the values of all internal registers at each time point.

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The file will usually have a number of lines of the form:


Roll back to <time>

For example the following is an extract from an actual trace file

5.00022e-05 2696 9 2696 0


5.09397e-05 2696 9 2696 0
5.09407e-05 2692 10 2692 0

Roll back to 5.08599e-05

5.09397e-05 2696 9 2696 0


5.09407e-05 2692 10 2692 0
5.09657e-05 2692 10 2692 0

Roll-back occurs when an analog time step is rejected but the digital simulation has
already advanced past the new analog time. In this case the digital simulator has to
back-track events. This mechanism is central to the operation of the mixed-mode
system and is explained in more detail in “Mixed-mode Simulator - How it Works”
below.

Mixed-mode Simulator - How it Works

Event Driven Digital Simulator


The digital simulator is said to be Event Driven. An event is essentially a change of
state e.g. a gate output changing from logic '0' to logic '1'. When an event occurs on an
output, all devices with inputs connected to that output are notified of the event and
can respond appropriately by generating new events.

For example, consider the following circuit fragment.

LOGIC '1'

HC04
HC00

U1

U2

HC02

LOGIC '0'

U3

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U1 receives an event, a rising edge at its input at time = T. U1 has a propagation delay
of 5.5nS, so on receipt of the event at its input, U1 posts an event at its output with a
time T+5.5nS. At that time this event is received by U2 and U3. U3 does not respond
to this event because one of its inputs is permanently at logic '1' so its output will
always be low. U2, however, does respond and creates a low-high event at a time
delayed by its propagation delay of 6.5nS i.e. T+5.5nS+6.5nS. Any device with an
input connected to the output of U2 will process this new event and so the process
continues.

In addition to the propagation delays described above, there are also additional delays
caused by loading effects. Each input has an effective input capacitance and each
output a resistance. For each event, an additional delay is added equal to the sum of all
capacitances on the node multiplied by the driving output's resistance.

Interfacing to the Analog Simulator


Connections between the analog and digital system are made via special interfaces
bridges. (As described in “Analog to Digital Interfaces” on page 274 these bridges are
implicitly included by the simulator and it isn't necessary for the user to wire them in.)
The digital to analog interface has an output that looks like - to a first approximation -
an analog representation of a digital gate. This output changes voltage at a specified
rise and fall time when the digital input changes state. More importantly, the analog
system is notified when an event occurs at the input to a D-A interface bridge and a
timestep is forced at that time. This is known as a breakpoint and is the analog
equivalent of an event. The analog system is only notified of events that occur at the
input of D-A bridges. It knows nothing of events that are internal to the digital system.

Analog to digital interface bridges are much like a comparator. When the analog input
passes a threshold, the output state changes appropriately and a digital event is
generated.

Time Step Control

With two simulators running largely independently, something is needed to


synchronise the timesteps. Basically the analog system is in control. It tells the digital
system to process events up to a certain time, that time being the analog system's next
anticipated time point. A problem arises, however in that the next analog timestep is
not guaranteed to be accepted. The analog system frequently rejects timesteps either
because of slow convergence or because a shorter timestep is needed to maintain the
required accuracy. If the analog system has to cut back the timestep to a point prior to
the most recent digital event, then the digital system has to back-track. This process is
known as roll-back and the need for the digital simulator to be able to perform it
substantially increases its complexity. In order to roll-back the digital simulator has to
store its past history back to the most recent accepted analog timepoint

Enhancements over XSPICE


• Gate delays in XSPICE are stored i.e. like a transmission line not like a real gate.
SIMetrix gate delays are inertial so if a pulse shorter than the propagation delay
is received, it is swallowed not transmitted.
• Automatic interface creation. In XSPICE you have to explicitly join digital and
analog nodes via interface bridges. In SIMetrix this is done automatically.

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• Fan out implemented. The underlying mechanism for load dependent delay was
there but none of the models supported it. Static loading effects (as in bipolar
logic) was not supported at all. In SIMetrix it is.
• Input load reflected in analog to digital interfaces. The AD interfaces in XSPICE
have infinite input impedance regardless of what the digital output is driving.
SIMetrix AD interfaces reflect the digital capacitative and static load at their
inputs.
• Output strength reflected in digital to analog interfaces. The DA interfaces in
XSPICE have zero output impedance regardless of what is driving them.
SIMetrix DA interfaces reflect the strength of the digital output driving the input.
A hi-z logic state will look like a hi-z logic state when transferred to the analog
domain. This is not the case with XSPICE.
• AD interface threshold detection. All AD interfaces switch at a particular input
threshold. In the XSPICE system the output switched at the first analog timepoint
that exceeded the threshold. This could be a long way passed the threshold if the
analog time steps are large. In SIMetrix a mechanism has been implemented that
cuts back the time step so that the threshold is hit within a specified time
tolerance.
• Arbitrary logic block device. This allows the definition of any logic device using
a simple descriptive language. The language accommodates combinational logic,
synchronous and asynchronous registers as well as look up tables (i.e. ROMS)
and arrays (i.e. RAMs)
• Arbitrary analog to digital converter. Up to 32 bits with specified input range and
offset, conversion time and maximum conversion rate. Output may be in two's
complement or offset binary.
• Arbitrary digital to analogue converter. Up to 32 bit with specified input range
and offset and output slew time. Input may be in two's complement or offset
binary.
• Voltage controlled oscillator (analog in digital out). There was one of these in the
original XSPICE code but it suffered a number of problems and was scrapped.
The SIMetrix version is all new.

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Chapter 9 Digital Simulation

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Chapter 10 SIMetrix vs SPICE

Below is a list of incompatibilities between SIMetrix and SPICE

Capacitors

SIMetrix: Allows two temperature coefficients of capacitance and two


voltage coefficients on device line and model. (TC1, TC2, VC1,
VC2).
SPICE 2 Allows polynomial voltage coefficients. Temperature
coefficients not supported.
SPICE 3 Has capacitor model allowing specification in terms of process
parameters. Does not support voltage or temperature
coefficients.

Inductors

SIMetrix Inductance value only


SPICE 2 Allows polynomial current coefficients.
SPICE 3 Inductance value only

MOSFETs

SIMetrix Supports SPICE levels 1, 2 & 3. (Support many other non-


SPICE models)
SPICE 2 Supports levels 1, 2 & 3
SPICE 3 Supports levels 1-6. Levels 4 and 5 are BSIM1 and BSIM2
respectively. Level 6 is a new empirical model

Resistors

SIMetrix Supports 2 temperature coefficients on device line and in model.


SPICE 2 Supports 2 temperature coefficients on device line only.
SPICE 3 Supports 2 temperature coefficients in model only. Also allows
specification of resistance in terms of process parameters.

Voltage Controlled Switches

SIMetrix Switch specified in terms of model describing on resistance


(RON), off resistance (ROFF), turn on voltage (VON) and turn
off voltage (VOFF). Resistance between VON and VOFF varies
continuously following a cubic law. Switch model is compatible
with PSpice
SPICE 2 Switches not implemented.
SPICE 3 Switch specified in terms of on resistance, off resistance,
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Chapter 10 SIMetrix vs SPICE

threshold voltage and hysteresis voltage. Device switches


abruptly at appropriate voltage.
Additional model parameters have been added to some devices for compatibility with
other commercial simulators. Devices affected are:

Diodes
BJTs
JFETs
MOSFETs

The following devices are implemented in SPICE 3 but are not available with
SIMetrix.
Current controlled switch
Uniform Distributed RC Line

Analysis Modes

Two analysis modes available in standard SPICE 3 have not been implemented in
SIMetrix. Details follow:

Distortion analysis. (.DISTO) This has not been implemented primarily because the
usefulness of this mode is limited. The analysis only provides 2nd and 3rd harmonics
which would is inadequate for the majority of applications. SIMetrix is supplied
instead with a comprehensive suite of spectral analysis post processing functions.

Fourier analysis (.FOUR). This isn't really an analysis mode at all but a post processing
function. SIMetrix is supplied with a script - FOUR - which performs the same action
as this analysis mode. In fact it is superior because it can be applied to any signal after
the run is complete whereas the standard SPICE .FOUR analysis requires the user to
specify the signal in advance of the simulation.

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302
Index

Index

.ALIAS 192
.DC 193
.ENDF 194
.ENDS 40
.FILE 194
.FUNC 195
.GRAPH 196
.INC 203
.LIB 206
.MODEL 207
.NODESET 210
.OPTIONS 215
.OUT file 23
.PARAM 31, 38, 228
.SUBCKT 40, 237
.SXDAT files 24
.TEMP 238
.TRACE 240
A
ABS (function) 35
ABSTOL (simulator option) 216, 270
ABSTOLMAX (simulator option) 216
AC analysis 190
ACCT (simulator option) 216
ACOS (function) 35
ACOSH (function) 35
ad_converter model 169
adc_bridge model 172
adc_schmitt model 184
Analog-digital converter 169
Analog-digital interface bridge 172
Analog-digital schmitt trigger 184
And gate 129
Arbitrary logic block
language definition 281
model 148
Arbitrary source 52
charge devices 53
examples 54

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flux devices 53
look-up tables 36
non-linear capacitors and inductors 53
ASIN (function) 35
ASINH (function) 35
ASYNCDELAY - arbitrary logic block keyword 289, 290
ATAN (function) 35
ATAN2 (function) 35
ATANH (function) 35
B
Batch mode 15
B-H curves 81
BINDIAG (simulator option) 216
Bipolar junction transistor 56, 60, 64
BITWISE - arbitrary logic block keyword 289, 290, 291
BJT 56, 60, 64
model parameters 57
BSIM3 94
BSIM4 95
Buffer (digital) 135
C
Capacitor 66
model parameters 68
Capacitor with voltage initial condition 68
CCCS 69
CCVS 70
CHGTOL (simulator option) 216, 270
CLOCK - arbitrary logic block keyword 289, 290
cm_cap model 68
cm_ind model 82
COMB - arbitrary logic block keyword 291
Comments 21
inline 45
Configuration 17
Connection types 28
Constant parameters 31
Controlled digital oscillator 182
Convergence 256
COS (function) 35
COSH (function) 35
Current controlled current source 69
Current controlled switch 301
Current controlled voltage source 70

304
Index

Current source 71
D
d_and model 130
d_buffer model 135
d_dff model 133
d_dlatch model 131
d_fdiv model 137
d_inverter model 143
d_jkff model 145
d_nand model 150
d_nor model 151
d_open_c model 152
d_open_e model 153
d_or model 154
d_osc model 183
d_pulldown model 155
d_pullup model 156
d_pulse model 139
d_ram model 157
d_source model 140
d_srff model 158
d_srlatch model 161
d_state model 162
d_tff model 164
d_tristate 166
d_xnor model 167
d_xor model 168
da_converter model 176
dac_bridge model 179
Data file 24
Data names 25
DC analysis 193
DCOPSEQUENCE (simulator option) 216
DDT (function) 35
DEFAD (simulator option) 216
DEFAS (simulator option) 217
DEFL (simulator option) 217
DEFNRD (simulator option) 217
DEFNRS (simulator option) 217
DEFPD (simulator option) 217
DEFPS (simulator option) 217
DEFW (simulator option) 217
Delay
load 280
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Simulator Reference Manual

wire 281
DELAY - arbitrary logic block keyword 289, 290, 291
Delay time (pulse source) 115
DEVICE - arbitrary logic block keyword 295
Digital devices 128
delays 129
family parameters 128, 277
input parameters 129
output parameters 128
Digital model libraries 281
Digital pulse 139
Digital signal source 140
Digital simulation 273
analog to digital interfaces 274
logic families 276
logic states 273
Digital-analog converter 176
Digital-analog interface bridge 179
DIGMINTIME (simulator option) 217
Diode 72
model parameters 73, 74
Distortion analysis 301
D-type flip flop 133
D-type latch 131
E
Ebers-Moll 60
EDGE - arbitrary logic block keyword 289
EKV 96
Embedding files in netlist 194
Exclusive NOR gate 167
Exclusive OR gate 168
EXP (function) 35
EXPAND (simulator option) 24, 217
EXPANDFILE (simulator option) 24, 217
Exponential source 119
Expressions 29–39
.PARAM 31
circuit variables 30
for arbitrary source 53
for device parameters 30
for model parameters 30
functions 35
operators 32
parameters 31
306
Index

syntax 30
F
Fall time
pulse source 115
FAMILY (model parameter) 277
FASTPOINTTOL (simulator option) 217
FASTRELTOL (simulator option) 217
Files - embedding in netlist 194
Filter response functions 109
Flicker noise, resistor 99
FLOOR (function) 35
FLUXTOL (simulator option) 217, 270
Fourier analysis 301
Frequency divider 136
G
GaAsFET 77
model parameters 77
Gate-drain capacitance 93
GAUSS (function) 36
GAUSSE (function) 36
GAUSSEL (function) 36
GAUSSL (function) 36
GEAR 220
Gear integration 271
Global nodes 43
GMIN (simulator option) 218
GMIN, MOSFET implementation 97
GMINMAXITERS (simulator option) 218
GMINMULT (simulator option) 218
GMINSTEPITERLIMIT (simulator option) 218
Gummell Poon 56
Gummel-Poon 60
H
HIGH (logic state) 273
HI-IMPEDANCE (logic strength) 273
HOLD - arbitrary logic block keyword 289
I
ICRES (simulator option) 218
IF (function) 35
IFF (function) 35
IGBT 82
IN_FAMILY (model parameter) 277
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Simulator Reference Manual

Inductor 78
saturable 79
with hysteresis 79
Inductor with current initial condition 82
Initial conditions 202
Initial value (pulse source) 115
Integration methods 270
Internal nodes 26
Inverter (digital) 143
ITL1 (simulator option) 218
ITL2 (simulator option) 218
ITL4 (simulator option) 219
ITL7 (simulator option) 219
J
JFET 84
Jiles-Atherton 80
JK flip-flop 144
JUNCAP 123
Junction FET 84
model parameters 85
L
Language 45
Language declaration 20
Laplace block 105
LEVEL - arbitrary logic block keyword 290
LIMIT (function) 35
List file 23
LN (function) 35
Load delay 280
LOG (function) 35
LOG10 (function) 35
Logic compatibility tables 277
Logic families 276
Logic states 273
LOGICHIGH (simulator option) 34, 219
LOGICLOW (simulator option) 34, 219
LOGICTHRESHHIGH (simulator option) 34, 219
LOGICTHRESHLOW (simulator option) 34, 219
Look-up tables 36
Lossy transmission line 86
model parameters 87
LOW (logic state) 273

308
Index

M
MATCHEDSUBCIRCUITS (simulator option) 219
MAX (function) 35
MAXEVTITER (simulator option) 219
MAXOPALTER (simulator option) 219
MAXORD (simulator option) 219
MaxVectorBufferSize (global setting) 18
MC_ABSOLUTE_RECT (simulator option) 220
MC_MATCH_RECT (simulator option) 220
MCLOGFILE (simulator option) 220
METHOD (simulator option) 220, 270
Mextram 125
MIN (function) 35
MINBREAK (simulator option) 220
MINCLOCK - arbitrary logic block keyword 289
MINGMINMULTIPLIER (simulator option) 221
MINTIMESTEP (simulator option) 221
Model parameters
analog-digital bridge 173
analog-digital converter 170
arbitrary logic block 149
BJT 57
Buffer 135
capacitor 68
controlled digital oscillator 183
digital initial condition 138
digital pulse 139
digital signal source 141
digital-analog bridge 180
digital-analog converter 177
diode 73, 74
D-type flip-flop 133
D-type latch 131
exclusive NOR gate 167
exclusive OR gate 168
frequency divider 137
gaAsFET 77
inverter 144
JK flip-flop 145
junction FET 85
laplace block 105
lossy transmission line 87
MOSFET 92
NAND gate 150

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NOR gate 151


open-collector buffer 152
open-emitter buffer 153
OR gate 154
pulldown resistor 155
pullup resistor 156
resistor 99
schmitt trigger 185
set-reset flip-flop 158
SR latch 161
state machine 162
toggle flip-flop 164
tri-state buffer 166
voltage controlled switch 113
Monte Carlo
distribution functions 36
MOS9 123
MOSFET 88
model parameters 89, 92
MOSGMIN (simulator option) 221
Multi step analyses 189
Mutual inductor 122
N
Names, vector 25
Nand gate 150
Netlist 19
NEWGMIN (simulator option) 221
NODELIMIT (simulator option) 221
Nodes, internal 26
NODESETRES (simulator option) 221
Noise analysis
creating noise info file 213
real time 243
Noise source 120
NOMCLOG (simulator option) 221
NOMOD (simulator option) 24, 221
NOMOS9GATENOISE (simulator option) 222
Non-GUI mode 15
NOOPALTER (simulator option) 222
NOOPINFO (simulator option) 222
NOOPITER (simulator option) 222
Nor gate 151
NORAW (simulator option) 222
NOSENSFILE (simulator option) 222
310
Index

NoStopOnUnknownParam (global setting) 18


NUMDGT (simulator option) 222
O
OLDLIMIT (simulator option) 222
OLDMOSGMIN (simulator option) 222
OLDMOSNOISE (simulator option) 222
Open-collector buffer 152
Open-emitter buffer 153
Operating point analysis
output file 215
OPINFO (simulator option) 24, 223
OPINFOFILE (simulator option) 223
OPTIMISE (simulator option) 223
Or gate 154
OUT - arbitrary logic block keyword 292
OUT_FAMILY (model parameter) 277
out_res 280
out_res_neg 280
out_res_pos 280
P
Parameters
.PARAM 228
built-in constants 31
in circuits 37
model 228
passing to subcircuits 229
PARAMLOG (simulator option) 24, 223
Period (pulse source) 115
Philips models 123
Piece-wise linear source 116
PIVREL (simulator option) 223
PIVTOL (simulator option) 223
POINTTOL (simulator option) 224, 269
POLY 69, 71
Polynomial specification 70
PORT - arbitrary logic block keyword 287
PSpice 20
PTAACCEPTAT 224
PTACONFIG (simulator option) 224
PTAMAXITERS (simulator option) 224
PTAOUTPUTVECS (simulator option) 224
Pulldown resistor 155
Pullup resistor 156

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Simulator Reference Manual

Pulse (digital) 139


Pulse source 115
Pulse width (pulse source) 115
Pulsed value (pulse source) 115
PWL file source 117
PWR (function) 35
PWRS (function) 35
R
Random access memory 156
READONLY - arbitrary logic block keyword 292
Real time noise analysis 243
RELTOL (simulator option) 224, 269
RELTOLMAX (simulator option) 224
RESISTIVE (logic strength) 273
Resistor 98
model parameters 99
Rise time
pulse source 115
RSHUNT (simulator option) 225
S
s_xfer model 105
SDT (function) 35
SearchDefaultTol (global setting) 18
SEED (simulator option) 225
SENSFILE (simulator option) 225
Sensitivity analysis 233
Set-reset flip-flop 157
SETUP - arbitrary logic block keyword 290
SGN (function) 35
SIMULATOR CONTROLS
.FILE 118, 194
Simulator controls
.AC 190
.ALIAS 192
.DC 193
.ENDF 194
.GRAPH 196
.IC 202
.INC 203
.LIB 206
.MODEL 207
.NODESET 210
.OP 214

312
Index

.OPTIONS 215
.PARAM 228
.SENS 233
.SUBCKT 237
.TEMP 238
.TRACE 240
.TRAN 241
SIN (function) 35
Single frequency FM 120
SINH (function) 35
Sinusoidal source 118
Snapshots 243
SOURCEMAXITERS (simulator option) 227
Spectrum (function) 201
SQRT (function) 35
SR latch 160
Star-Hspice 20
State machine (model) 162
States - logic 273
Stimulus
exponential source syntax 119
noise source syntax 120
piece wise linear syntax 116
pulse source syntax 115
PWL file source syntax 117
sine source syntax 118
single frequency FM syntax 120
STP (function) 35
STRONG (logic strength) 273
Subcircuits 40
.SUBCKT control 237
calling from a netlist 42
global nodes 43
nesting 43
passing parameters 42
T
Tables, look-up 36
TAN (function) 36
TANH (function) 36
TEMP (simulator option) 227
TempDataDir (global setting) 18
TIMESTATS (simulator option) 227
TLMINBREAK (simulator option) 227
TNOM (simulator option) 227
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Toggle flip-flop 163


TotalVectorBufferSize (global setting) 18
Trace file (arbitrary logic block) 295
Transient analysis 241
fast start 243
snapshots 243
Transmission line (lossless) 111
Transmission line (lossy) 86
Tri-state buffer 165
TRTOL (simulator option) 227, 270
TRYTOCOMPACT (simulator option) 227
U
U (function) 36
UIC 242
UNDETERMINED (logic strength) 273
UNIF (function) 36
UNIFE (function) 36
UNIFEL (function) 36
UNIFL (function) 36
Uniform distributed RC line 301
UNIV - universal logic family 280
UNKNOWN (logic state) 273
URAMP (function) 36
USER - arbitrary logic block keyword 295
V
VBIC 60, 64
VCVS 112
Vector connections 27
Vector names 25
VNTOL (simulator option) 228, 270
VNTOLMAX (simulator option) 228
Voltage controlled current source 112
Voltage controlled switch 113
model parameters 113
Voltage source 114
exponential 119
noise source 120
piece wise linear 116
pulse 115
PWL file 117
sine 118
single frequency FM 120

314
Index

W
WC (function) 36
WCE (function) 36
WCEL (function) 36
WCL (function) 36
WIDTH - arbitrary logic block keyword 289, 290, 291, 292
WIDTH (simulator option) 24, 228
Wire Delay 281
WIRETABLE (simulator option) 228
X
XSPICE
devices 128

315

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