IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55

Vishay Semiconductors

Optocoupler, Photodarlington Output (Single, Dual, Quad

Channel)
Single Channel
Features
• 125 mA Load Current Rating A 1 6 B

• Fast Rise Time, 10 µs C 2 5 C

• Fast Fall Time, 35 µs
NC 3 4 E
• Single, Dual and Quad Channel
• Solid State Reliability
Dual Channel
• Standard DIP Packages
A 1 8 E
• Lead-free component
C 2 7 C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC C 3 6 C

A 4 5 E
Agency Approvals
• UL1577, File No. E52744 System Code H or J, Quad Channel
A 1 16 E
Double Protection
C 2 15 C
• DIN EN 60747-5-2 (VDE0884)
C 3 14 C
DIN EN 60747-5-5 pending
A 4 13 E
Available with Option 1 A 5 12 E
• BSI IEC60950 IEC60065 C 6 11 C
• FIMKO C 7 10 C

A 8 9 E

Description i179011

The IL30/ IL31/ IL55 single, ILD30/ ILD31/ ILD55

dual, and ILQ30/ ILQ31/ ILQ55 quad are optically
e3 Pb
Pb-free

coupled isolators with Gallium Arsenide infrared emit-

ters and silicon photodarlington sensors. Switching
can be achieved while maintaining a high degree of
isolation between driving and load circuits, with no
crosstalk between channels. These optocouplers can
be used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic fields.
The IL30/ IL31/ IL55 are equivalent to MCA230/
MCA231/ MCA255. The ILD30/ ILD31/ ILD55 are
designed to reduce board space requirements in high
density applications.

Document Number 83621 [Link]

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Vishay Semiconductors

Order Information
Part Remarks
IL30 CTR > 100 %, Single Channel DIP-6
IL31 CTR > 200 %, Single Channel DIP-6
IL55 CTR > 100 %, Single Channel DIP-6
ILD30 CTR > 100 %, Dual Channel DIP-8
ILD31 CTR > 200 %, Dual Channel DIP-8
ILD55 CTR > 100 %, Dual Channel DIP-8
ILQ30 CTR > 100 %, Quad Channel DIP-16
ILQ31 CTR > 200 %, Quad Channel DIP-16
ILQ55 CTR > 100 %, Quad Channel DIP-16
IL55-X009 CTR > 100 %, Single Channel SMD-6 (option 9)
ILD30-X009 CTR > 100 %, Dual Channel SMD-8 (option 9)
ILD31-X007 CTR > 200 %, Dual Channel SMD-8 (option 7)
ILD31-X009 CTR > 200 %, Dual Channel SMD-8 (option 9)
ILD55-X007 CTR > 100 %, Dual Channel SMD-8 (option 7)
ILD55-X009 CTR > 100 %, Dual Channel SMD-8 (option 9)
ILQ30-X009 CTR > 100 %, Quad Channel SMD-16 (option 9)
ILQ55-X007 CTR > 100 %, Quad Channel SMD-16 (option 7)
ILQ55-X009 CTR > 100 %, Quad Channel SMD-16 (option 9)

For additional information on the available options refer to

Option Information.

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input
(each channel)
Parameter Test condition Symbol Value Unit
Peak reverse voltage VRM 3.0 V
Forward continuous current IF 60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.33 mW/°C

Output
Parameter Test condition Part Symbol Value Unit
Collector-emitter breakdown voltage IL30 BVCEO 30 V
ILD30 BVCEO 30 V
ILQ30 BVCEO 30 V
IL55 BVCEO 55 V
ILD55 BVCEO 55 V
ILD55 BVCEO 55 V

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Parameter Test condition Part Symbol Value Unit

Collector (load) current IC 125 mA
Power dissipation Pdiss 150 mW
Derate linearly from 25 °C 2.0 mW/°C

Coupler
Parameter Test condition Part Symbol Value Unit
Total package power dissipation IL30 Ptot 250 mW
IL31 Ptot 250 mW
IL55 Ptot 250 mW
ILD30 Ptot 400 mW
ILD31 Ptot 400 mW
ILD55 Ptot 400 mW
ILQ30 Ptot 500 mW
ILQ31 Ptot 500 mW
ILQ55 Ptot 500 mW
Derate linearly from 25 °C IL30 3.3 mW/°C
IL31 3.3 mW/°C
IL55 3.3 mW/°C
ILD30 5.33 mW/°C
ILD31 5.33 mW/°C
ILD55 5.33 mW/°C
ILQ30 6.67 mW/°C
ILQ31 6.67 mW/°C
ILQ55 6.67 mW/°C
Isolation test voltage VISO 5300 VRMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Comparative tracking index 175
Storage temperature Tstg - 55 to + 125 °C
Operating temperature Tamb - 55 to + 100 °C
Lead soldering time at 260 °C 10 sec.

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input
GaAs emitter (per channel)
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 20 mA VF 1.25 1.5 V
Reverse current VR = 3.0 V IR 0.1 10 µA
Capacitance VR = 0 V CO 25 pF

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Vishay Semiconductors

Output
per channel
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter breakdown IC = 100 µA BVCEO 30/55 V
voltage
Collector-emitter leakage VCE = 10 V, IF = 0 ICEO 1.0 100 nA
current
Collector-emitter capacitance VCE = 10 V, f = 1.0 MHz CCE 3.4 pF

Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter saturation IC = 50 mA, IF = 50 mA VCEsat 0.9 1.0 V
voltage
Isolation test voltage 5300 VRMS
Isolation resistance RIO 10 12 Ω
Capacitance (input-output) CIO 0.5 pF

Current Transfer Ratio

Parameter Test condition Part Symbol Min Typ. Max Unit
Current Transfer Ratio IF = 10 mA, VCE = 5.0 V IL30 CTR 100 400 %
IL55 CTR 100 400 %
ILD30 CTR 100 400 %
ILD55 CTR 100 400 %
ILQ30 CTR 100 400 %
ILQ55 CTR 100 400 %
IL31 CTR 200 400 %
ILD31 CTR 200 400 %
ILQ31 CTR 200 400 %

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Vishay Semiconductors

Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Rise time VCC = 13.5 V, IF = 50 mA, RL = 100 Ω tr 10 µs
Fall time VCC = 13.5 V, IF = 50 mA, RL = 100 Ω tf 35 µs

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1.4 10
Normalized to: Vce = 5 V
1. 3 IF = 10 mA
Ta = –55°C
VF - Forward Voltage - V

1 Vce = 5 V

NIce - Normalized Ice

1.2
Ta = 25°C Vce = 1V
1.1
.1
1.0

0.9 .01
Ta = 85°C
0.8
.001
0.7 100
.1 1 10
.1 1 10 100
IF - Forward Current - mA IF - LED Current - mA
iil30_01 iil30_03

Figure 1. Forward Voltage vs. Forward Current Figure 3. Normalized Non-Saturated and Saturated Collector-
Emitter Current vs. LED Current

1.2 10
Normalized to:
NCTRce - Normalized CTRce

Normalized to:
1.0 Vce = 5 V Vcb = 3.5 V
NIcb - Normalized Icb

IF = 10 mA 1
0.8 IF = 10 mA

0.6 Vce = 5 V
.1
0.4

0.2 .01
Vce =1V
0.0
.1 1 10 100 1000 .001
IF - LED Current - mA .1 1 10 100
IF - LED Current - mA
iil30_02 iil30_04

Figure 2. Normalized Non-Saturated and Saturated CTRCE vs. Figure 4. Normalized Collector-Base Photocurrent vs. LED
LED Current Current

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Vishay Semiconductors

12000
VCE=5 V
Hfe - Current Gain

10000
IF
8000
VCE=1 V
6000

4000 tD
tR
VO
2000 tPLH
0
.01 .1 1 10 100 VTH=1.5 V
Base Current tPHL tS tF

iil30_05 iil30_08

Figure 5. HFE Current Gain vs. Base Current Figure 8. Switching Waveform

80
Vcc = 5V
1.0 kΩ
tpLH - Low/High Propagation

Vth = 1.5 V
60 V CC =13.5 V

F=10 KHz,
Delay - µS

Ω
220 ıˇ DF=50% RL
40 VO

470 Ω

20
IF =50 mA
100 Ω

0
0 5 10 15 20
iil30_06 IF - LED Current - mA iil30_09

Figure 6. Low to High Propagation Delay vs. Collector Load Figure 9. Switching Schematic
Resistance and LED Current

20

1kΩ
tpHL - High/Low Propagation

Vcc = 5 V
15
Vth = 1.5 V
delay - µs

10

100Ω
5

0
0 5 10 15 20
IF - LED Current - mA
iil30_07

Figure 7. High to low Propagation Delay vs. Collector Load

Resistance and LED Current

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Vishay Semiconductors

Package Dimensions in Inches (mm)

pin one ID
3 2 1

.248 (6.30)
.256 (6.50)

4 5 6 ISO Method A

.335 (8.50)
.343 (8.70)
.300 (7.62)
.039 .048 (0.45)
.022 (0.55) typ.
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4° 18°
typ. .114 (2.90)
.031 (0.80) min. .130 (3.0)
3°–9° .010 (.25)
.031 (0.80) typ.
.018 (0.45) .035 (0.90)
.022 (0.55) .300–.347
.100 (2.54) typ. (7.62–8.81)
i178004

Package Dimensions in Inches (mm)

pin one ID

4 3 2 1
.255 (6.48)
.268 (6.81)
5 6 7 8
ISO Method A

.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14) .300 (7.62)
.031 (0.79) typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.050 (1.27) 10° .110 (2.79) .250(6.35)
.020 (.51 ) .130 (3.30)
.018 (.46) .035 (.89 ) 3°–9°
.022 (.56) .100 (2.54) typ. .008 (.20)
i178006 .012 (.30)

Document Number 83621 [Link]

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Vishay Semiconductors

Package Dimensions in Inches (mm)

pin one ID
8 7 6 5 4 3 2 1
.255 (6.48)
.265 (6.81)
9 10 11 12 13 14 15 16 ISO Method A

.779 (19.77 )
.790 (20.07)

.030 (.76) .300 (7.62)

.045 (1.14) .031(.79) typ.
.130 (3.30)
.150 (3.81) .110 (2.79)
.130 (3.30) .230 (5.84)
4° 10°
typ. .250 (6.35)
.020(.51)
.018 (.46) .035 (.89) 3°–9°
.022 (.56) .008 (.20)
.100 (2.54)typ. .050 (1.27) .012 (.30)

i178007

Option 7 Option 9
.300 (7.62) .375 (9.53)
TYP. .395 (10.03)

.300 (7.62)
ref.
.028 (0.7)
MIN. .180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249) .012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.331 (8.4) .040 (1.02)
15° max.
MIN. .315 (8.00)
min.
.406 (10.3)
MAX. 18494

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Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83621 [Link]

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