Q 2023-24 FIRST PRE BOARD ANS
MARK
[Link] the correct option. d 1
(a) Both of the diodes are forward biased.
(b) Both of the diodes are reverse biased
(c) in (i), diode is forward biased and in (ii),
diode is reverse biased.
(d) in (i), diode is reverse biased and in (ii), diode
is forward biased.
[Link] (A): In a p-n junction under (a) both Assertion and Reason are true and Reason is
equilibrium there is no net current. correct explanation of Assertion. 1
Reason (R): In equilibrium, the drift current is
equal and opposite to the diffusion current.
3. What are intrinsic semiconductors? What is the Definition of intrinsic conductor and conductivity
effect of doping on the conductivity of increases 0.5+0.5
semiconductors? Draw the energy band diagram
for p-type semiconductor. Energy band diagram for p-type semiconductor 1
4. Explain, with the help of suitable diagram, the Correct diagram 0.5
two important processes that occur during the
formation of p-n junction. Hence define the
terms: depletion region and barrier potential.
OR
With a suitable circuit diagram explain the
principle and working of a full wave rectifier.
Draw its input and output wave form.
Explanation 1.5
The two main processes during the formation
of a p-n junction are diffusion and drift.
Diffusion is the movement of charge carriers
(holes from the p-side and electrons from the
n-side) across the junction due to concentration
differences, creating a diffusion current. Drift
is the movement of these same charge carriers
in the opposite direction, caused by an internal
electric field that forms across the junction,
resulting in a drift current
Definition of depletion layer and barrier 1
potential:
The depletion layer is a region near a p-n
junction where mobile charge carriers
(electrons and holes) have been depleted due to
recombination. The potential barrier is the
electric potential difference that develops
across this depletion layer, created by the fixed
ions, which opposes further diffusion of charge
carriers across the junction
OR
circuit diagram full wave rectifier. 1
Principle and working(The principle is based 1
on the ability of diodes to conduct current in
only one direction.) 1
input and out put wave form.
Q 2023-24 FIRST PRE BOARD Ans/mark
1. In n-type semiconductor, the donor energy level (b ) just below the conduction band 1
lies
(a) at the centre of the energy gap.
(b) just below the conduction band
(c) just above the valence band.
(d) in the conduction band.
2. Assertion(A): The conductivity of intrinsic (b) If both Assertion and Reason are 1
semiconductor increases with increase in true but Reason is not the correct
temperature. explanation of Assertion.
Reason(R): Increase in temperature decreases the
average time between collisions of electrons.
3. Out of the given configuration of diodes which D1 forward biased, because 0.5+0.5
of them are (i) forward biased and (ii) reverse D2 reverse biased ,because 0.5+0.5
biased? Justify your answer.
4. Define energy band in solid. By help of energy Energy bands are continuous ranges of energy 1.5+1.5
band diagram distinguish between that electrons can occupy within a solid
conductors, semiconductors and insulators. material, formed when the discrete energy
levels of individual atoms overlap.
Three band diagram and explanation
SAMPLE QUESTION PAPER Ans/mark
1(2024-25)
1. The number of electrons made available for (A)doping level 1
conduction by dopant atoms depends strongly
upon (A) doping level
(B) increase in ambient temperature
(C) energy gap (D) options (A) and (B) both
2. (I) Identify the circuit elements X and Y as (I)X = Full wave rectifier ½
shown in the given block diagram and draw the Y = Filter ½
output waveforms of X and Y.
(Output Waveform for X) ½
(II) If the centre tapping is shifted towards Diode
D1 as shown in the diagram, draw the output
waveform of the given circuit.
(Output Waveform for Y) ½
II)
1
3. (I) Draw the energy band diagram for P-type I(a).T = 0 K 3
semiconductor at (i) T=0K and (ii) room
temperature.
(II)In the given diagram considering an ideal
diode, in which condition will the bulb glow
(a) when the switch is open
(b) when the switch is closed 1
(b) T = Room Temperature
Justify your answer.
1
II)It will be (a) when switch is open 0.5M
as when switch is closed diode will be forward
biased and current will by-pass the bulb.
0.5M
SAMPLE QUESTION PAPER Ans/mark
2(2023-24)
1. 1
Assertion (A) : Putting p type semiconductor a) both Assertion and Reason are true and
slab directly in physical contact with n type Reason is correct explanation of
semiconductor slab cannot form the pn junction. Assertion.
Reason (R) : The roughness at contact will be
much more than inter atomic crystal spacing and
continuous flow of charge carriers is not
possible.
2. 2
(a) Name the device which utilizes unilateral (a) Rectifier 1
action of a pn diode to convert (b) Circuit diagram of full wave rectifier 1
ac into dc.
(b) Draw the circuit diagram of full wave
rectifier.
[Link] Study Based Questions i)d 4
Read the following paragraph and answer the
questions that follow.
A semiconductor diode is basically a pn junction
with metallic contacts provided at the ends for
the application of an external voltage. It is a two
terminal device. When an external voltage is
applied across a semiconductor diode such that p-
side is connected to the positive terminal of the
battery and n-side to the negative terminal, it is
said to be forward biased. When an external
voltage is applied across the diode such that n-
side is positive and p-side is negative, it is said to
be reverse biased. An ideal diode is one whose
resistance in forward biasing is zero and the (ii) c
resistance is infinite in reverse biasing. When the (iii) c OR b
diode is forward biased, it is found that beyond (iv) d
forward voltage called knee voltage, the
conductivity is very high. When the biasing
voltage is more than the knee voltage the
potential barrier is overcome and the current
increases rapidly with increase in forward
voltage. When the diode is reverse biased, the
reverse bias voltage produces a very small
current about a few microamperes which almost
remains constant with bias. This small current is
reverse saturation current.
i. In the given figure, a diode D is connected to
an external resistance R = 100 ohm and an emf
of 3.5 V. If the barrier potential developed across
the diode is 0.5 V, the current in the circuit will
be:
a)40 mA (b) 20 mA (c) 35 mA (d) 30 mA
ii)In which of the following figures, the pn diode
is reverse biased?
iii)
Based on the V-I characteristics of the diode, we
can classify diode as
(a) bilateral device (b) ohmic device
(c) non-ohmic device (d) passive element
OR
Two identical PN junctions can be connected in series by three different methods as shown
in the figure. If the potential difference in the junctions is the same, then the correct
connections will be
(a) in the circuits (1) and (2) (b) in the circuits (2)
and (3)
(c) in the circuits (1) and (3) (d) only in the
circuit (1)
iv)
The V-I characteristic of a diode is shown in the
figure. The ratio of the resistance of the diode at I
= 15 mA to the resistance at V = -10 V is
(a) 100 (b) 106 (c) 10 (d) 10-6
SAMPLE QUESTION PAPER Ans/mark
2(2023-24)
1. ASSERTION(A):The electrical conductivity c) A is true but R is false 1
of a semiconductor increases on doping.
REASON:Doping always increases the number
of electrons in thesemiconductor.
2. The figure shows a piece of pure To keep the reading of ammeter constant 2
semiconductor S in series with a value of R should be increased 1
variable resistor R and a source of constant as with the increase in temperature of a
voltage V. Should the value semiconductor, its resistance decreases and
of R be increased or decreased to keep the current tends to increase. 1
reading of the ammeter constant, when
semiconductor S is heated? Justify your answer
OR
The graph of potential barrier versus width of OR
depletion region for an unbiased diode is B - reverse biased
In the case of reverse biased diode the ½
shown in graph A. In comparison to A ,graphs ½
B and C are obtained after biasing the diode in potential barrier becomes higher
as the battery further raises the potential of
different ways .Identify the
the n side.
type of biasing in B and C and justify your
C -forward biased
answer. ½
Due to forward bias connection the potential
of P side is raised and hence ½
the height of the potential barrier decreases.
PRE BOARD EXAM (2023– 2024) Ans/mark
[Link] a good conductor, the energy levels in a
valence band: (A) are partially filled only. (B) (C) both (a) and (b) are correct.
overlap with conduction band only. (C) both (a)
and (b) are correct. (D) none of these
2.
SAMPLE QUESTION PAPER 1(2025-26) Ans/mark
[Link] the help of circuit diagram explain 3
working of the full wave rectifier.
2.
When an external voltage is applied across
a semiconductor diode such that p-side is
connected to the positive terminal of the
battery and n-side to the negative terminal
it is said to be forward biased. The applied
voltage mostly drops across the depletion
region and the voltage drop across the p-
side and n-side of the junction is negligible.
When an external voltage is applied across
the diode such that n-side is positive and p-
side is negative, it is said to be reverse
biased. The applied voltage mostly drops
across the depletion region.
(I) Ge and diodes start conducting at
and 0.3 V 0.7 V respectively. In the
following figure if Ge diode connection are
reversed, the value of
Vo changes by (assume that the Ge diode
has large breakdown voltage)
1
(A) 0.2 V (B) 0.4 V
(C) 0.6 V (D) 0.8 V
II (D)
V0= E-VSI-VGE =12-0.7-0.3 =11 V
Id =V0/R= 11/(5.6x 1000)= 1.96 Ma 1
Here,D1 only is conducting, D2 is non conducting 1
Here the diode is in forward biased. So,we can replace it
by a connecting wire.
For the circuit,
Total battery voltage,V=30V
Equivalent resistance of R2 and R3 connected in parallel is
1 1 1
given by R23= = + =1+ 1
R 23 R1 R2 10 10
i.e. R23=5k Ω
Therefore total circuit resistance ,R=15kΩ
30 V
Total circuit current ,I=
15 k Ω
Current flowing through R2= Current flowing through R3
I
=
2
I 30V
Therefore,V A -V B= X R2= X10kΩ = 10 V
2 2 X 15 k Ω