What is the current flowing in the circuit?

1. The reading of the ammeter for a silicon diode in

the given circuit is :- (A) 2.31 A (B) 1.33 A (C) 1.71 A (D) 2.00 A

6. If in a p-n junction diode, a square input signal of

10V is applied as shown. Then the output signal
across 𝑅𝐿 will be :

(1) 15 mA (2) 11.5 mA (3) 13.5 mA (4) 0

2. The forward biased diode connection is:

7. Carbon, silicon and germanium have four valence

electrons each. At room temperature which one of the
3. An p-n junction (D) shown in the figure can act as following statements is most appropriate?
a rectifier. An alternating current source (V) is
connected in the circuit. (A) The number of free conduction electrons is
significant in C but small in Si and Ge
The current (I) in the resistor
R can be shown by: (B) The number of free conduction electrons is
negligibly small in all the three

(C) The number of free electrons for conduction is

significant in all the three

(D) The number of free electrons for conduction is

significant only in Si and Ge but small in C

MULTIPLE CORRECT TYPE QUESTIONS

8. Which of the following statements is correct

(A) Resistance of semiconductor decreases with

4. In the following, which one of the diodes is reverse increase in temperature
based
(B) In an electric field, displacement of holes is
opposite to the displacement of electrons (C)
Resistance of a conductor decreases with the increase
in temperature

(D) n-type semiconductors are neutral

9. Pick out the correct statement the reverse current in

p-n junction diode

5. The circuit has two (A) can be minimum and constant

oppositely connected
(B) remains constant even after the breakdown
ideal diodes in parallel.
voltage
(C) becomes infinity at breakdown 14.A strip of copper and another of germanium are
cooled from room temperature to 80 K. The
(D) reverse current is controlled by external resistance of -
resistance
(A) copper strip increases and that of germanium
Here are the extracted questions from the new images decreases
you provided.
(B) copper strip decreases and that of germanium
SINGLE CORRECT TYPE QUESTIONS increases
10. An electric field is applied to a semi-conductor. (C) each of these increases​​ (D) each of these
Let the number of charge carriers be n and the decreases
average drift speed be v. If the temperature is
increased 15. In a P-N junction diode not connected to any
circuit -
(A) Both n and v will increase
(A) the potential in the same everywhere
(B) n will increase but v will decrease
(B) the P-type side is at a higher potential then the
(C) v will increase but n will decrease​ N-type side
(D) Both n and v will decrease (C) there is an electric field at the junction directed
from the N-type side to the P-type side

(D) there is an electric field at the junction directed

11. The manifestation of band structure in solids is from the P-type to the N-type side
due to -
16. When p-n junction diode is forward biased, then.
(A) Bohr's correspondence principle
(A) both the depletion region and barrier height are
(B) Pauli's exclusion principle reduced
(C) Heisenberg's uncertainty principle (B) the depletion region is widened and barrier height
(D) Boltzmann's law is reduced

12. P-type semiconductor is formed when (C) the depletion region is reduced and barrier height
is increased
A. As impurity is mixed in Si​
(D) both the depletion region and barrier height are
B. Al impurity is mixed in Si increased

C. B impurity is mixed in Ge​ 17. The V-I characteristic for a p-n junction diode is
plotted as shown in the figure. From the plot we can
D. P impurity is mixed in Ge conclude that
(A) A and C​ ​ (B) A and D (A) the forward bias
resistance of diode is very
(C) B and C​ ​ (D) B and D high; almost infinity for
small values of V and after
13..In extrinsic semiconductors -
a certain value it becomes
(A) The conduction band and valence band overlap very low

(B) The gap between conduction band and valence (B) the reverse bias
band is more than 16 eV resistance of diode is very
high in the beginning upto breakdown voltage is not
(C) The gap between conduction band and valence achieved
band is near about 1 eV
(C) both forward and reverse bias resistances are
(D) The gap between conduction band and valence same for all voltages
band will be 100 eV and more
(D) both (A) and (B) are correct (A) 1.5 Ω ​ (B) 5 Ω (C) 6.67 Ω (D) 200 Ω

[Link] the below given arrangement determine the 22. In the following circuits PN-junction diodes
ammeter reading, if each diodes have a forward D1,D2 and D3 are ideal for the following potential of
resistance of 50 Ω and A and B, the
infinite backward correct
resistance - increasing order
of resistance
(A) zero. (B) 0.02​ between A and
(C) 0.03. (D) 0.036 B will be -

(i) -10V, -5V (ii) -5V, -10V (iii) -4V, -12V

(A) (i) < (ii) < (iii)​ (B) (iii) < (ii) < (i)
19. A 2V battery is connected across AB as shown in (C) (ii) = (iii) < (i)​ (D) (i) = (iii) < (ii)
the figure. The value of the current supplied by the
battery when in one case battery's positive terminal is 23. A sinusoidal voltage of peak value 200 volt is
connected to A and in other case when positive connected to a diode and resistor R in the circuit
terminal of battery is connected to B will respectively
be :

(A) 0.1 A and 0.2 A​

(B) 0.2 A and 0.4 A
shown so that half wave rectification occurs. If the
(C) 0.1 A and 0.4 A​ forward resistance of the diode is negligible
(D) 0.2 A and 0.1 A compared to R then rms voltage (in volt) across R is
approximately -

(A) 200 ​ (B) 100 ​

(C) 2002 ​ (D) 280

20. Current in the circuit will be -
[Link] a full wave rectifier if input freq. is 50 Hz then
output ripple frequency will be :–
(A) 5/40 A ​ (1) 50 Hz​ (2) 100 Hz ​
(B) 1/10A
(3) 200 Hz​ (4) 25 Hz
(C) 5/10 A ​
(D) 5/20 A [Link] ratio of resistance for forward to reverse bias
of P–N junction diode is :–

(1) 102: 1 (2) 10-2: 1 (3) 1 : 10-4​ (4) 1 : 104

[Link] the forward voltage in a diode is increased, the

21. The diode used in the circuit shown in the figure width of the depletion region :–
has a constant voltage drop of 0.5 V at all currents
and a maximum power rating of 100 milliwatts. What (1) decreases ​ (2) increases
should be the value of the
resistor R connected in (3) fluctuates ​ (4) does not change
series with the diode for
obtaining maximum [Link] pure "Ge" semiconductor quantity of "e" and
current - hole is 1019 e/m3 if we doped donor impurity in it with
density 1023 e/m3 then quantity of hole (e/m3) in
semiconductor is : -
(1) 1015​ (2) 1019​ (3) 1023​ (4) 1027

In a p-n junction the depletion layer of thickness 10-6

m has potential across it is 0.1 V. The electric field is
(V/m) :–
(1) 10V ​(2) 20V ​(3) 30V ​(4) none
(1) 107 ​ ​ (2) 10-6 ​ (3) 105 ​ ​ (4) 10-5
[Link] conductivites of Ge and Na are σ₁, and
28.A Ge specimen is doped with Al. The σ₂ respectively. If these substances are heated, then
concentration of acceptor atoms is ~ 1021 atoms/m3.
Given that the intrinsic concentration of electron-hole (1) σ₁ decreases andσ₂increases
pairs is ~ 1019/m3, the concentration of electrons in
(2) both σ₁ and σ₂ decreases
the specimen is :–
(3) both σ₁ and σ₂ increases
(1) 1017/m3 (2) 1015/m3
(4) σ₁ increases and σ₂ decreases
(3) 104/m3​ (4) 102/m3
[Link] electric field is applied to a semiconductor. Let
29. Assuming that the junction diode is ideal the
the number of charge carriers density is 'n' and the
current through the diode is :–
average drift speed be v. If the temperature is
increased :–

(1) both n and v will increase

(2) n will increase but v will decrease

(1) 200 mA​ (2) 20 mA (3) v will increase but n will decrease

(3) 2 mA​ (4) zero (4) both n and v will decrease

[Link] two semiconductor of p and n type are 35. Forbidden energy gap of Ge is 0.75 ev, maximum
brought into contact, they form a p-n junction which wave length of incident radiation of photon for
acts like a :– producing electron - hole pair in germanium
semiconductor is :-
(1) rectifier (2) amplifier
(1) 4200 Å​ (2) 16500 Å
(3) oscillator (4) conductor
(3) 4700 Å​ (4) 4000 Å
31. In a forward biased p-n junction diode, the
potential barrier in the depletion region is of the form [Link] the figure, input is applied
:– across A and C and output is taken
across B and D, then the output is :

(1) zero​ ​ ​ (2) same

as input

(3) full wave rectified​ (4) half wave rectified

37. A two Volts battery forward biases a diode

however there is a drop of 0.5 V across the diode

[Link] VAB :–
which is independent of current. Also a current (1) All Ec, Eg, E, increase
greater then 10 mA produces large joule loss and
damages diode. If diode is to be operated at 5mA, the (2) E and E increase, but Eg decreases
series resistance to be put is :–
(3) E and E decrease, but Eg increases
(1) 3k ohm (2) 300 k ohm (3) 300ohm (4) 200 k
ohm (4) All Ec, Eg, E, decrease

[Link] of electrons in N-type Ge is 5000 43. In the middle of the depletion layer of reverse
cm²/volt sec and conductivity 5 mho/cm. If effect of biased p-n junction, the-
holes is negligible then impurity concentration will (1) electric field is zero​ (2) potential is maximum
be :-
(3) electric field is maximum​ (4) potential is
(1) 6.25 x1013/cm³​ (2) 9.25x 1014/cm³ zero
(3) 6x1013/cm³​ ​ (4) 9 x1013/cm³ [Link] number of holes and free electrons in
[Link] the only false statement from the semiconductor are n and ne respectively then e :-
following (1) np > ne in intrinsic semiconductor
(1) the resistivity of a semiconductor increases with (2) np = ne in extrinsic semiconductor
increase in temperature
(3) np = ne in intrinsic semiconductor
(2) substances with energy gap of the order of 10eV
are insulators (4) ne> np in intrinsic semiconductor
(3) in conductors the valence and conduction bands [Link] resistivity of a semiconductor depends upon
may over lap its
(4) the conductivity of a semiconductor increases (1) size​ ​ (2) type of atoms
with increases in temperature
(3) length​ (4) size and type of atom
[Link] will be conductance of pure silicon crystal at
300K temperature. If electron hole pairs per cm ^ 3 is [Link] forbidden energy gap in Ge is :-
1.072 x10 ^ 10 at this temperature, μn = 1350
cm²/volt sec and μp= 480 cm²/volt sec :- (1) 0.72 eV​ (2) 0.072 eV

(1) 3.14 x10-6 mho / cm​ (2) 3 x 106 mho / cm (3) 7.2 eV​ (4) 0.0072 eV

(3) 10-6 mho / c m​​ (4) 106 mho / cm [Link] energy gap in a semiconductor is of the order
of :-
[Link] electrical conductivity of a semiconductor
increases when electromagnetic radiation of (1) 1 eV​​ (2) 5 eV
wavelength shorter than 2480 nm, is incident on it.
(3) 10 eV​ (4) 15 eV
The band gap in (eV) for the semiconductor is-

(1) 1.1 eV ​ ​ (2) 2.5 eV

(3) 0.5 eV ​ ​ (4) 0.7 eV

[Link] the lattice constant of this semiconductor is

decreased, then which of the following is correct ?