PNP Silicon AF Transistors
BC 327 BC 328
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 337, BC 338 (NPN)
q 2 3 1
Type BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328 BC 328-16 BC 328-25 BC 328-40
Marking
Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2
Pin Configuration 1 2 3 C B E
Package1) TO-92
1)
For detailed information see chapter Package Outlines.
282
5.91
BC 327 BC 328
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BC 327 45 50 5
BC 328 25 30 800 1 100 200 625 150
Unit V
mA A mA mW C
65 + 150
200 135
K/W
1)
Mounted on Al heat sink 15 mm 25 mm 0.5 mm.
Siemens Aktiengesellschaft
283
BC 327 BC 328
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 327 BC 328 Collector-base breakdown voltage IC = 100 A BC 327 BC 328 Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 C VCB = 45 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 327/16; BC 328/16 BC 327/25; BC 328/25 BC 327/40; BC 328/40 IC = 300 mA; VCE = 1 V BC 327/16; BC 328/16 BC 327/25; BC 328/25 BC 327/40; BC 328/40 Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter saturation voltage1) IC = 500 mA; IB = 50 mA VCEsat VBEsat 60 100 170 0.7 2 V BC 328 BC 327 BC 328 BC 327 IEB0 hFE 100 160 250 160 250 350 250 400 630 V(BR)EB0 ICB0 100 100 10 10 100 nA nA A A nA V(BR)CE0 45 25 V(BR)CB0 50 30 5 V Values typ. max. Unit
1)
Pulse test: t 300 s, D 2 %.
Siemens Aktiengesellschaft
284
BC 327 BC 328
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz fT Cobo Cibo 200 12 60 MHz pF Values typ. max. Unit
Siemens Aktiengesellschaft
285
BC 327 BC 328
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Collector current IC = f (VBE) VCE = 1 V
Collector cutoff current ICB0 = f (TA) VCB = 45 V
Siemens Aktiengesellschaft
286
BC 327 BC 328
DC current gain hFE = f (IC) VCE = 1 V
Transition frequency fT = f (IC) f = 20 MHz, TA = 25 C
Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10
Base-emitter saturation voltage VBEsat = f (IC) hFE = 10
Siemens Aktiengesellschaft
287
NPN Silicon AF Transistors
BC 337 BC 338
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP)
q 2 3 1
Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40
Marking
Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3
Pin Configuration 1 2 3 C B E
Package1) TO-92
1)
For detailed information see chapter Package Outlines.
288
5.91
BC 337 BC 338
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BC 337 45 50 5
BC 338 25 30 800 1 100 200 625 150
Unit V
mA A mA mW C
65 + 150
200 135
K/W
1)
Mounted on Al heat sink 15 mm 25 mm 0.5 mm.
Siemens Aktiengesellschaft
289
BC 337 BC 338
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 337 BC 338 Collector-base breakdown voltage IC = 100 A BC 337 BC 338 Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 C VCB = 45 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 IC = 300 mA; VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter saturation voltage IC = 500 mA; IB = 50 mA VCEsat VBEsat 60 100 170 0.7 2 V BC 338 BC 337 BC 338 BC 337 IEB0 hFE 100 160 250 160 250 350 250 400 630 V(BR)EB0 ICB0 100 100 10 10 100 nA nA A A nA V(BR)CE0 45 25 V(BR)CB0 50 30 5 V Values typ. max. Unit
1)
Pulse test: t 300 s, D 2 %.
Siemens Aktiengesellschaft
290
BC 337 BC 338
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz fT Cobo Cibo 170 8 60 MHz pF Values typ. max. Unit
Siemens Aktiengesellschaft
291
BC 337 BC 338
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Collector current IC = f (VBE) VCE = 1 V
Collector cutoff current ICB0 = f (TA) VCB = 45 V
Siemens Aktiengesellschaft
292
BC 337 BC 338
DC current gain hFE = f (IC) VCE = 1 V
Transition frequency fT = f (IC) f = 20 MHz, TA = 25 C
Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10
Base-emitter saturation voltage VBEsat = f (IC) hFE = 10
Siemens Aktiengesellschaft
293