Unit - 1

Q.1 A zener diode works on the principle of

A. Tunnelling of charge carriers across the junction
B. Thermionic emission
C. Diffusion of charge carriers across the junction
D. Hopping of charge carriers across the junction
Ans: A

Q.2 When a thyristor is negatively biased.

A. All the three junctions are negatively biased
B. Outer junctions are positively biased and the inner junction is negatively biased
C. Outer junctions are negatively biased and the inner junctions is positively biased
D. The junctions near the anode is negatively biased and the one near the cathode is positively
biased.
Ans: C

Q.3 Static indictions thyristors have

A. High dv/dt and low di/dt
B. Low dv/dt and high di/dt
C. Low dv/dt and low di/dt
D. High dv/dt and high di/dt
Ans : D

Q. 4 A power MOSFET is a
A. Voltage controlled device
B. Current controlled device
C. Frequency controlled device
D. None of the above
Ans:A

Q.5 Which of the following is preferred for VHF/UHF applications.

A. BJT
B. MOSFET
C. SIT
D. IGBT
Ans: C

Q.6 In a conventional reverse blocking thyristor

A. External layers are lightly doped and internal layers are heavily doped
B. External layers are heavily doped and internal layers are lightly doped
C. The p layers are heavily doped and the n layers are lightly doped
D. The p layers are lightly doped and the n layers are heavily doped.
Ans: D

Q.7 MOS controlled thyristors have

1. Low forware voltage drop during conduction
2. Fast turn on and turn of time
3. Low switching losses
4. High reverse voltage blocking capability
5. Low gate input impedance
A. 1, 2 and 3 are correct
B. 3, 4 and 5 are correct
C. 2, 3 and 4 are correct
D. 1, 3 and 5 are correct
Ans: A

Q.8 In a power mosfet switching time are of the order of few.

A. Seconds
B. Milliseconds
C. Microseconds
D. Nanoseconds
Ans: D
1. An ideal power diode must have

a) low forward current carrying capacity

b) large reverse breakdown voltage
c) high ohmic junction resistance
d) high reverse recovery time

Answer: b

Explanation: Large reverse breakdown voltage is desirable whereas others will increases the
losses.
2. To make a signal diode suitable for high current & high voltage carrying applications with
minimum losses, ________

a) a lightly doped n layer is grown between the two p & n layers

b) a heavily doped n layer is grown between the two p & n layers
c) a lightly doped p layer is grown between the two p & n layers
d) a heavily doped p layer is grown between the two p & n layers

Answer: a

Explanation: The above process simply the one used to manufacture power diodes.
3. Power diode is __________

a) a three terminal semiconductor device

b) a two terminal semiconductor device
c) a four terminal semiconductor device
d) a three terminal analog device

Answer: b
Explanation: It has two terminals anode and cathode same as that of a ordinary diode. In fact, a
power diode is nothing but a signal diode with a extra layer.
4. The V-I Characteristics of the diode lie in the
a) 1st & 2nd quadrant
b) 1st & 3rd quadrant
c) 1st & 4th quadrant
d) Only in the 1st quadrant

Answer: b
Explanation: First in the forward region & Third in the reverse biased mode.
5. Which of the following is true in case of a power diode with R load?
a) I grows almost linearly with V
b) I decays almost linearly with V
c) I is independent of V
d) I initial grows than decays

Answer: a
Explanation: R load therefore V and I are linear and in phase.
6. A diode is said to be reversed biased when the
a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) cathode is negative with respect to the anode
d) both cathode & anode are negative

Answer: a
Explanation: K is positive w.r.t the A when the device is reversed biased.
7. A diode is said to be forward biased when the
a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) anode is negative with respect to the anode
d) both cathode & anode are positive

Answer: b
Explanation: A is positive w.r.t the K when the device is forward biased.
8. In case of an ideal power diode, the leakage current flows from
a) anode to cathode
b) cathode to anode
c) in both the directions
d) leakage current does not flow

Answer: d
Explanation: Leakage current does not flow in IDEAL diode.
9. The peak inverse current IP for a power diode is given by the expression
a) IP=t + di/dt
b) IP=t * log ⁡i
c) IP=t * di/dt
d) IP=t * ∫ t*i dt

Answer: c

Explanation: The leakage current is the reveres recovery time (t) into the rate of change of current.
10. A power diode with small softness factor (S-factor) has
a) small oscillatory over voltages
b) large oscillatory over voltages
c) large peak reverse current
d) small peak reverse current

Answer: b

Explanation: Peak reverse current is independent of S-factor smaller the value of S-factor larger
the oscillatory over voltage.
1. If V & I are the forward voltage & current respectively, then the power loss across the diode
would be
a) V/I
b) V2 I2
c) I2 V
d) VI

Answer: d
Explanation: Simply power (P) is voltage into current i.e. VI
2. The power loss in which of the following cases would be the maximum?
a) When both V & I are minimum
b) When both V & I are maximum
c) When only V is maximum
d) When only I is maximum

Answer: b
Explanation: P=VI Hence, it would be maximum when both V and I are maximum.
3. Even after the forward current reduces to zero value, a practical diode continues to conduct
n the reverse direction for a while due to the
a) resistance of the diode
b) high junction temperature
c) stored charges in the depletion region
d) none of the mentioned

Answer: c
Explanation: Due to the stored charges during the earlier current flow, even when the current
reduces to zero due to some structural properties of the device, the device takes time to sweep out
the stored charges.
4. For a p-n junction diode, the peak inverse current & the reverse recovery time are dependent on
a) inverse voltage
b) forward Voltage
c) di/dt
d) all of the above mentioned

Answer: c
Explanation: It only depends upon the number stored charges which depends upon the rate of
change of current.
5. In an AC-DC converter, a diode might be used as a
a) voltage source
b) phase angle controller
c) freewheeling Diode
d) filter

Answer: c
Explanation: In converters diodes are used to feed the energy back to the load in case of an
inductive load.
6. When the p-n junction diode is forward biased, the width of the depletion region __________
a) increases
b) decreases
c) remains Constant
d) increases than Decreases

Answer: b
Explanation: When forward biased depletion layer decreases & finally it collapses to allow the
current flow.
7. When the p-n junction diode is reversed biased, the width of the depletion region __________
a) increases
b) decreases
c) remains Constant
d) none of the above mentioned

Answer: a
Explanation: When reverse biased depletion layer increases until the breakdown value is reached.
8. In case of a practical p-n junction diode, the rise in the junction temperature ___________
a) decreases the width of the depletion region
b) increases the barrier potential
c) increases the width of the depletion region
d) width of the depletion region increases but the barrier potential remains constant

Answer: a

Explanation: The rise in temperature excites the charges, which go & recombine with the charges
in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required
to turn on the device.
9. In the equilibrium state, the barrier potential across a unbiased silicon diode is _________
a) 0.3 V
b) 0.7 V
c) 1.3 V
d) 0 V

Answer: b
Explanation: Barrier potential is due to the charges that establish an electric field across the two
junctions.
10. In the equilibrium state the barrier, potential across a unbiased germanium diode is
_________

a) 0.3 V
b) 0.7 V
c) 1.7 V
d) 0 V

Answer: a
Explanation: Barrier potential is due to the charges that establish an electric field across the two
junctions.
1. Shown below is the diagram of an ideal super diode. When the input voltage Vin is negative,
then the output voltage Vout = ?

a) Vout/Vin
b) Vin
c) 0
d) Vin * Rl

Answer: c
Explanation: When the input voltage is negative, there would be a negative voltage on the diode
so it works like an open circuit. Hence no current flows through the load and Vout is zero.
2. In order to reduce the reverse recovery time of the diodes, __________ is carried out.
a) shortening of the length of the device
b) platinum & gold doping
c) antimony doping
d) adding an extra silicon layer

Answer: b
Explanation: Platinum & gold doping improves the performance of the devices.
3. Which of the following diodes uses a metal-semiconductor junction?
a) General purpose diodes
b) Fast recovery diodes
c) Schottky diode
d) None of the mentioned

Answer: c
Explanation: Schottky diode uses a Al-Semiconductor junction.
4. Which of the below mentioned statements is false regarding Schottky diodes?
a) Schottky diodes have a Al-Silicon junction
b) There is no storage of charges in a Schottky diode
c) The majority charge carriers in a Schottky diode are holes
d) Schottky diodes can be switched off faster than a p-n junction diode of the same rating

Answer: c
Explanation: The majority charge carriers in a Schottky diode are electrons not holes.
5. A Schottky diode _____
a) has current flow due to holes only
b) has no reverse recovery time
c) has large amount of storage charges
d) has zero cut-in voltage

Answer: b
Explanation: Due to the metal-silicon junction there are no stored charges hence, no reverse
recovery time, due to which the switching is faster.
6. Which of the following are/is the majority charge carriers in a Schottky diode?
a) Holes
b) Electrons
c) Both holes & Electrons carry equal current
d) None of the mentioned

Answer: b
Explanation: The metal has no holes hence major(almost full) current flows due to the electrons
only.
7. In a Schottky diode, the silcon is usually
a) N-type
b) P-type
c) un-doped semiconductor
d) silicon is not used

Answer: a
Explanation: Usually only n-type silicon is used because the p-type has certain limitations.
8. As compared to a p-n junction diode(of the same rating), a Schottky diode has
__________
a) higher cut-in voltage
b) lower reverse leakage current
c) higher operating frequency
d) higher switching time

Answer: c
Explanation: Due to the metal-silicon junction there are no stored charges, hence no reverse
recovery time due to which the switching is faster.
9. A Schottky diode has __________
a) a gate terminal
b) aluminum-silicon junction
c) platinum gold junction
d) germanium-Arsenide junction

Answer: b
Explanation: Schottky diode uses a Al-Semiconductor junction.
10. A Schottky diode can be switchd off much faster than an equivalent p-n junction diode
due to its
a) higher operating frequency
b) no recombination of charges
c) more compact structure
d) None of the mentioned

Answer: b
Explanation: Due to the metal-silicon junction there are no stored charges, hence no reverse
recovery time due to which the switching is faster.
1. Ideally the voltage drop across a conducting diode must be
a) ∞
b) 0
c) higher than the forward biased voltage
d) equal to the forward biased voltage

Answer: b
Explanation: Ideal conduction = No losses.
2. When reverse breakdown occurs in a diode
a) voltage increases & current is constant
b) voltage increases & current also increases
c) both are constant
d) voltage is constant & current increases

Answer: d
Explanation: Recall the I-V curve of a diode in the 3rd quadrant.
3. Schottky diodes are also called as
a) metal diode
b) hot carrier diode
c) signaling diode
d) easy turn on diode

Answer: b
Explanation: Due to the metal used to carry the current, it is also called as a hot carrier diode.
4. In a Schottky diode, the aluminum metal acts as a __________
a) anode
b) cathode
c) gate
d) common terminal

Answer: a
Explanation: The Al (Metal) always acts as the anode.
5. If the doping levels of the semiconductor is increased, then the width of the depletion layer
a) increases
b) decreases
c) is unchanged
d) keeps oscillating

Answer: b
Explanation: Higher the doping, more the number of charge carrier available to neutralize the
opposite charges on the junction.
6. As compared to a p-n junction device of equal rating, the Schottky diode has
a) lower reverse voltage rating
b) lower reverse leakage current
c) higher Switching time
d) higher cut-in voltage

Answer: a

Explanation: Low reverse voltage rating is the only drawback against a p-n junction diode.
7. In a Schottky diode, the silicon layer acts as a _____________
a) anode
b) cathode
c) gate
d) common terminal

Answer: b
Explanation: The metal acts as the anode and the semiconductor as a cathode.
8. In a certain power electronics application, it is required that the voltage at the load terminals is
to be kept within a certain range of voltages only. Among the device listed below, which would be
the most ideal choice for this application?
a) P-n junction diode
b) Schottky diode
c) Zener diode
d) Fast recover diode

Answer: c
Explanation: Zener diode is used as a voltage regulating device.
9. Shown below is the diagram of an ideal super diode. When the input voltage Vin is positive,
then the output voltage Vout = ?

a) Vout/Vin
b) Vin
c) 0
d) Vin * Rl
Answer: b
Explanation: Input is positive, hence it is amplified by the operational amplifier which switches
the diode on. Current flows through the load & because of the feedback, the output voltage is equal
to the input voltage.
10. Zener diodes allow a current to flow in the reverse direction, when the
a) voltage reaches above a certain value
b) temperature reaches above a certain value
c) current always flows in the reverse direction only
d) current cannot flow in the reverse direction

Answer: a
Explanation: Zener diode has voltage regulating property. When voltage reaches above a certain
value (Zener voltage), current starts to flow in the reverse direction.
1. Which of the following devices does not belong to the transistor family?
a) IGBT
b) MOSFET
c) GTO
d) BJT

Answer: c
Explanation: GTO is gate turn off transistor, it belongs to the Thyristor family. All the other
devices belong to the transistor family.
2. A power transistor is a
a) three layer, three junction device
b) three layer, two junction device
c) two layer, one junction device
d) four layer, three junction device

Answer: b
Explanation: It has three layers p-n-p or n-p-n forming two p-n junctions.
3. In a power transistor, ____ is the controlled parameter.
a) VBE
b) VCE
c) IB
d) IC

Answer: d

Explanation: The collector current is the controlled parameter.

4. A power transistor is a _________ device.
a) two terminal, bipolar, voltage controlled
b) two terminal, unipolar, current controlled
c) three terminal, unipolar, voltage controlled
d) three terminal, bipolar, current controlled

Answer: d
Explanation: Power transistor is simply many BJT’s connected in series parallel on a single silicon
chip for power applications. It is a three terminal, bipolar, current controlled device.
5. In a power transistor, _________ is the controlling parameter.
a) VBE
b) VCE
c) IB
d) IC

Answer: c
Explanation: The base current controls the collector current. Hence, the base current Ib is the
controlling parameter.
6. In a power transistor, the IB vs VBE curve is
a) a parabolic curve
b) an exponentially decaying curve
c) resembling the diode curve
d) a straight line Y = IB

Answer: c
Explanation: The B-E junction of a BJT resembles a p-n junction diode, hence the curve.
7. For a power transistor, if the base current I B is increased keeping VCE constant, then
a) IC increases
b) IC decreases
c) IC remains constant
d) none of the mentioned

Answer: a
Explanation: Ic is directly proportional to Ic.
8. The forward current gain α is given by
a) IC/IB
b) IC/IE
c) IE/IC
d) IE/IB

Answer: b
Explanation: Collector current by emitter current is the current gain, its value is close to one but
never greater than.
9. The value of β is given by the expression
a) IC/IB
b) IC/IE
c) IE/IC
d) IE/IB

Answer: a
Explanation: Collector current by the base current is beta, its value is in the range 50 to 300.
10. A power BJT is used as a power control switch by biasing it in the cut off region (off state)
r in the saturation region (on state). In the on state
a) both the base-emitter & base-collector junctions are forward biased
b) the base-emitter junction is reverse biased, and the base collector junction is forward biased
c) the base-emitter junction is forward biased, and the base collector junction is reversed biased
d) both the base-collector & the base-emitter junctions are reversed biased

Answer: a
Explanation: When base-emitter & base-collector junctions are forward biased only than both the
p-n junctions are forward biased and the device is on.
1. The MOSFET combines the areas of _______ & _________
a) field effect & MOS technology

b) semiconductor & TTL

c) mos technology & CMOS technology
d) none of the mentioned

Answer: a
Explanation: It is an enhancement of the FET devices (field effect) using MOS technology.
2. Which of the following terminals does not belong to the MOSFET?
a) Drain
b) Gate
c) Base
d) Source

Answer: c
Explanation: MOSFET is a three terminal device D, G & S.
3. Choose the correct statement
a) MOSFET is a uncontrolled device
b) MOSFET is a voltage controlled device
c) MOSFET is a current controlled device
d) MOSFET is a temperature controlled device

Answer: b
Explanation: It is a voltage controlled device.
4. Choose the correct statement(s)
i) The gate circuit impedance of MOSFET is higher than that of a BJT
ii) The gate circuit impedance of MOSFET is lower than that of a BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT
a) Both i & ii
b) Both ii & iv
c) Both i & iv
d) Only ii

Answer: c
Explanation: MOSFET requires gate signals with lower amplitude as compared to BJTs & has
lower switching losses.
5. Choose the correct statement
a) MOSFET is a unipolar, voltage controlled, two terminal device
b) MOSFET is a bipolar, current controlled, three terminal device
c) MOSFET is a unipolar, voltage controlled, three terminal device
d) MOSFET is a bipolar, current controlled, two terminal device

Answer: c
Explanation: MOSFET is a three terminal device, Gate, source & drain. It is voltage controlled
unlike the BJT & only electron current flows.
6. The arrow on the symbol of MOSFET indicates
a) that it is a N-channel MOSFET
b) the direction of electrons
c) the direction of conventional current flow
d) that it is a P-channel MOSFET

Answer: b
Explanation: The arrow is to indicate the direction of electrons (opposite to the direction of
conventional current flow).
7. The controlling parameter in MOSFET is
a) Vds
b) Ig
c) Vgs
d) Is
Answer: b
Explanation: The gate to source voltage is the controlling parameter in a MOSFET.
8. In the internal structure of a MOSFET, a parasitic BJT exists between the
a) source & gate terminals
b) source & drain terminals
c) drain & gate terminals
d) there is no parasitic BJT in MOSFET

Answer: b
Explanation: Examine the internal structure of a MOSFET, notice the n-p-n structure between the
drain & source. A p-channel MOSFET will have a p-n-p structure.
9. In the transfer characteristics of a MOSFET, the threshold voltage is the measure of the
a) minimum voltage to induce a n-channel/p-channel for conduction
b) minimum voltage till which temperature is constant
c) minimum voltage to turn off the device
d) none of the above mentioned is true

Answer: a
Explanation: It is the minimum voltage to induce a n-channel/p-channel which will allow the
device to conduct electrically through its length.
[Link] output characteristics of a MOSFET, is a plot of
a) Id as a function of Vgs with Vds as a parameter
b) Id as a function of Vds with Vgs as a parameter
c) Ig as a function of Vgs with Vds as a parameter
d) Ig as a function of Vds with Vgs as a parameter

Answer: b
Explanation: It is Id vs Vds which are plotted for different values of Vgs (gate to source voltage)
1. IGBT possess

a) low input impedance

b) high input impedance
c) high on-state resistance
d) second breakdown problems

Answer: b
Explanation: Like MOSFET IGBT possess high input impedance.
2. IGBT & BJT both posses ___
a) low on-state power losses
b) high on-state power losses
c) low switching losses
d) high input impedance

Answer: a
Explanation: Low on state power loss is one of the best parameters of both BJT & the IGBT.
3. The three terminals of the IGBT are
a) base, emitter & collector
b) gate, source & drain
c) gate, emitter & collector
d) base, source & drain
Answer: c
Explanation: IGBT is a three terminal device. It has a gate, a emitter & a collector.
4. In IGBT, the p+ layer connected to the collector terminal is called as the
a) drift layer
b) injection layer
c) body layer
d) collector Layer

Answer: b
Explanation: It is called as a injection layer, because it injects holes into the n– layer.
5. The controlling parameter in IGBT is the
a) IG
b) VGE
c) IC
d) VCE

Answer: b
Explanation: The controlling parameter is the gate to emitter voltage, as the device is a voltage
controlled device.
6. In IGBT, the n– layer above the p+ layer is called as the
a) drift layer
b) injection layer
c) body layer
d) collector Layer

Answer: a
Explanation: It is called as the drift layer because its thickness determines the voltage blocking
capabilities of the device.
7. The voltage blocking capability of the IGBT is determined by the
a) injection layer
b) body layer
c) metal used for the contacts
d) drift layer

Answer: d
Explanation: The drift layer which is a n– layer determines the voltage blocking capabilities.
8. The controlled parameter in IGBT is the
a) IG
b) VGE
c) IC
d) VCE

Answer: c
Explanation: The controlling parameter is the gate to collector current.
9. The structure of the IGBT is a
a) P-N-P structure connected by a MOS gate
b) N-N-P-P structure connected by a MOS gate
c) P-N-P-N structure connected by a MOS gate
d) N-P-N-P structure connected by a MOS gate

Answer: c
Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are
controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action.
10. The major drawback of the first generation IGBTs was that, they had
a) latch-up problems
b) noise & secondary breakdown problems
c) sluggish operation
d) latch-up & secondary breakdown problems

Answer: d

Explanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after the gate
signal is removed), and secondary breakdown problems (in which a localized hotspot in the device
goes into thermal runaway and burns the device out at high currents).
1. For a transistor, the safe operating area (SOA) is a plot of
a) Ib versus Vce
b) Ib versus Ic

c) Ic versus Vce
d) Ic versus time
Answer: c
Explanation: For reliable operation the collector current & voltage must remain within the SOA
curves.
2. The forward safe operating area (FSOA) pertains to the operation when
a) the device is fired at a 50% Duty cycle
b) the device is forward-biased
c) the device is operated on AC
d) the device is operated on DC

Answer: b
Explanation: The FSOA is for forward biased operations. The FSOA is plotted for AC as well as
DC for different duty cycles. Hence, option (b) is the most appropriate choice.
3. The SOAs are plotted always on a _________ scale
a) time
b) frequency
c) logarithmic
d) polynomial

Answer: c
Explanation: The scale is always logarithmic, irrespective of the type of device.
4. As the FSOA increases, the pulse width
a) decreases
b) increases
c) remains constant
d) vanishes

Answer: b
Explanation: On reduced pulse width values, the devices can operated on higher voltages &
currents.
5. The SOAs provided by the manufacturers are for
a) single pulse operation & a particular temperature
b) multi pulse operation & all the temperature
c) all the conditions
d) a particular duty cycle operation

Answer: a
Explanation: The manufacturer specifies the SOAs only for single pulse DC operation & a
particular temperature (usually 20Degree Centigrade Scale). For actual operations, The SOA’s
have to be modified using the thermal impedance charts.
6. A device is operating at Ic = 4A & Vce = 50V. For the device to operate at Ic = 20A (Without
damaging),
a) voltage should be increased
b) voltage should be reduced
c) voltage can be kept constant
d) current has to increased further

Answer: b
Explanation: For safe operation, the values should be within the limits. P = V.I – with increase in
one of the values, another value should decrease.
7. For a BJT, find the maximum power dissipation when the device is safely operated at Vce
= 90V and Ic = 0.5A
a) 40 Watts
b) 35 Watts
c) 45 Watts
d) 30 Watts

Answer: c

Explanation: P=90*0.5=45Watts.
8. The SOA for a MOSFET is plotted for

a) Id versus Vds
b) Ig versus Id
c) Ig versus Vds
d) Id versus Vgs

Answer: a

Explanation: It is a plot of drain current vs drain to source voltage.

9. The SOA for an IGBT is plotted for

a) Ic versus Vge
b) Ig versus Ic
c) Ig versus Vce
d) Ic versus Vce

Answer: d

Explanation: It is a plot of collector current vs collector to emitter voltage.

10. For MOSFET’s SOA, as the pulse width goes on increasing, the maximum voltage rating
____ & current rating ____

a) is constant, increases
b) increases, decreases
c) decreases, is constant
d) constant, decreases

Answer: c
Explanation: Refer MOSFET’s SOA.