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Problem Set 2 Semiconductors 2020

Physics of Semiconductors (‫)سمش نيع ةعماج‬

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AIN SHAMS UNIVERSITY

Faculty of Engineering

Prof. Wael Fikry Physics of Semiconductors 2020

and Dielectrics-PHM122s

Problem Set 2: Carrier Transport Phenomena

Put (T) on the true statement or (F) on the false statement. You should provide the
correct statement for the false one.
1. Drift velocity is the average velocity of charged particles in the presence of an electric field.
2. At very high electric fields, the electron drift velocity saturates with increasing field intensity.
3. The electron mobility in a semiconductor material increases with increasing doping concentration.
4. The mobility of electrons in a semiconductor is inversely proportional to the square root of the effective
mass of the electron.
5. The conductivity of intrinsic semiconductors increases with increasing temperature.
6. The diffusion length of an electron is the average distance traveled by that electron under the action of
an electric field before it undergoes recombination with a hole.
7. The diffusion length of electrons in a semiconductor increases as the electron mobility decreases.
8. The mean lifetime for holes is equal to that of electrons in an intrinsic semiconductor.
9. The condition in which the excess-carrier concentration is much larger than the thermal equilibrium
majority carrier concentration is called high level injection.
10. The diffusion coefficient and mobility of electrons in a semiconductor can have totally independent
values.
11. The room temperature resistivity of an n-type silicon with 1016 Phosphorus atoms/cm3 is 8.4 -cm.
12. The continuity equation for holes under steady state condition and constant electric field is given by
2
 p p
Dp  pE  G p  R p 
x
2
x
Choose the best correct answer. Show your working of numerical problems
1. The average velocity of carriers in a semiconductor with no external excitation sources…
(a) equals zero (b) depends on the temperature
(c) depends on the dimensions (d) depends on the doping

2. The mobility of carriers in an extrinsic semiconductor ……..

(a) depends on sample dimensions (b) depends only on the temperature
(c) depends only on the doping (d) depends on the temperature and doping

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3. At room temperature and low applied electric, the drift velocity of carriers in an extrinsic semiconductor
is …………..the thermal velocity.
(a) smaller than (b) higher than (c) equal to (d) not related to

4. In general, the mobility at room temperature of electrons in intrinsic semiconductors is ……..that of

metals.
(a) smaller than (b) higher than (c) equal to (d) negligible to

5. If an intrinsic semiconductor is heated, the mobility of carriers ……...

(a) increases (b) decreases (c) is maintained constant (d) becomes zero

6. The conductivity of a semiconductor ……………………..

(a) depends only on the carrier concentration (b) depends only on the temperature
(c) depends only on the doping
(d) depends on the temperature, doping, and carrier concentration

7. Increasing the cross-sectional area of a semiconductor, the drift current density……

(a) increases (b) decreases (c) is maintained constant (d) becomes zero

8. The height from the bottom edge of the conduction band indicates the …................. of carriers.
(a) kinetic energy (b) potential energy (c) total energy (d) mobility

9. The rise of the bottom edge of the conduction band in the +ve x direction indicates the presence of an
external electric field which is …................. .
(a) in the +ve x direction (b) in the -ve x direction
(c) zero (d) normal to the x direction

10. If the concentration of electrons increases in the +ve x direction, they will ........
(a) diffuse in the +ve x direction (b) diffuse in the -ve x direction
(c) not diffuse (d) diffuse normal to the x-direction

11. The increase of the concentration of electrons in the +ve x direction leads to a diffusion current which is
…….........
(a) in the +ve x direction (b) in the -ve x direction
(c) zero (d) normal to the x direction

12. The increase of the concentration of holes in the +ve x direction leads to a diffusion current which is
…….........
(a) in the +ve x direction (b) in the -ve x direction
(c) zero (d) normal to the x direction

13. For a nonuniform doping semiconductor along the x direction at thermal equilibrium,...
(a) EF - Ei must be constant (b) the fermi level must be constant with x
(c) EF - Ev must be constant (d) Ec – EF must be constant

14. Two semiconductors A and B have identical dimensions and effective masses but different mean free
times 𝑡𝑟𝐴 and 𝑡𝑟𝐵 where 𝑡𝑟𝐴 < 𝑡𝑟𝐵. By applying the same field on the two semiconductors,
(a) μA > μB (b) JA > JB (c) IA > IB (d) JA < JB (e) JA = JB

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The next Fig. presents an energy band diagram of non-uniform silicon doped sample of length L. Use the
cited energy band diagram to answer the following parts 15-24

Eg

Eg/3

15. The semiconductor type at point x1 is

(a) Extrinsic (b) Intrinsic (c) Degenerate

16. The semiconductor is degenerate

(a) Near x = 0 (b) Nowhere c) L/3< x < 2 L./3 (d) Near x = L

17. The electrostatic potential (V) inside the semiconductor is as sketched below.

18. The electric field is as sketched below.

19. The kinetic energy of the hole shown in the figure is

(a) Ev (b) -Eg/3 (c) Eg/3 (d) Zero

20. The hole drift current density (Jpdrift) flowing at x = x1 is

(a) Zero (b) -p ni EG/L (c) p ni EG/L (d) qpND (kT/q)/L

21. The electron current density (Jn) flowing at x = x1 is

(a) Zero (b) n ni EG/L (c) -n ni EG/L (d) Dn [n(x2) - n(0)]/L

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22. The position of maximum potential energy for electrons is

(a) Near x = 0 (b) at x = L/3 (c) at x = x1 (d) at x = L

23. Do equilibrium conditions prevail?

(a) Yes (b) No (c) Can't be determined

24. At x = x2, p = ?
(a) 7.63 106/cm3 (b) 2 1013/cm3 (c) 1010/cm3 (d) 1.72 1016/cm3

25. Which of the following sketches best describes the DN versus ND dependence of electrons in silicon at
room temperature?

As pictured in the aside Fig. the x > 0 portion of infinite light

semiconductor is illuminated with light. The light generates GL =
1015 electron-hole pairs /cm3-sec uniformly throughout the x > 0
region for the bar. GL = 0 for x < 0 and steady state condition is
prevailed. The semiconductor is silicon, the entire bar is uniformly 0 x
doped with ND = 1017 /cm3, τp= 10-6 sec, and T=300 K. Use the
figure and the given information in answering parts 26-28.

26. the hole concentration at x = - is ?

(a) 103 cm-3 (b) 109 cm-3 (c) 1018cm-3 (d) 1015 cm-3

27. the hole concentration at x = +?

(a) 2.25 103 cm-3 (b) 109 cm-3 (c)2.25 1018cm-3 (d) 1015 cm-3

28. What is the type and direction of the current at x = 0

(a) electron diffusion current in -x direction (b) electron diffusion current in +x direction
(c) hole diffusion current in -x direction (d) hole diffusion current in +x direction

If a charge density  is distributed as shown in the aside figure where


qax ......  w / 2  x  w / 2 and a is constant
 ( x)  
0 ...... x   w / 2 and x  w / 2 -w/2
x
w/2
Use the cited charge density distribution and the given information in
answering parts 29-30.
29. The electric field in the region  w / 2  x  w / 2 is given by
qa  2  w  
2
 2

(a)  ( x)  qa  x 2   w   (b)  ( x)  x    
2   2   2   2  
qa 2 qa 2
(c)  ( x )   x  w2  (d)  ( x)   x  w2 
2 2

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30. The maximum electric potential in the region  w / 2  x  w / 2 is given by

(let the reference be V=0 at x =-w/2)
qaw3 qaw3 qaw3 qaw3
(a) Vm  (b) Vm  (c) Vm   (d) Vm 
6 12 6 24

Problems
1. If an average hole drift velocity of 103 cm/s results in an uniform doped semiconductor bar of 1 cm long
when we applied a 2V across it, estimate the hole mobility inside the bar.
2. A (non-compensated) p-type silicon sample is maintained at room temperature. When an electric field with
a strength of 1000 V/cm is applied to the sample, the hole drift velocity is 3.5×105 cm/sec. (a) What is the
mean free path of a hole in this sample? (b) Estimate the electron and hole concentrations in this sample.
3. Two GaAs wafers, one n-type and one p-type, are uniformly doped such that ND (wafer 1) = NA (wafer 2)
>> ni. Which wafer will exhibit the larger resistivity? Explain.
4. The resistivity of pure Ge at a particular temperature is 0.52  m. If it is doped with 1020 atoms/m3 of a
trivalent impurity estimate the new value of resistivity. Assume the mobility of holes and electrons are 0.2
and 0.4 m2/V.s.
5. A specimen of an extrinsic p-type Si material has the following dimensions: length 5mm, width 2 mm and
thickness 1.0 mm. Calculate the impurity concentration of the specimen if the electrical resistance is 100.
The electron and hole mobility may be taken as 0.12 and 0.025 m2/V.s respectively, and the intrinsic carrier
density 2.5x1016 m-3. Determine the ratio of conductivities due to electrons and holes.
6. Two scattering mechanisms exist in a semiconductor. If only the first mechanism were present, the
mobility would be 250 cm2/V-s. If only the second mechanism were present, the mobility would be 500
cm2/V-s. Determine the mobility when both scattering mechanisms exist at
the same time.
7. Consider a sample of silicon at T = 300 K. Assume that the electron
concentration varies linearly with distance, as shown in the next figure. The
diffusion current density is found to be Jn = 0.19 A/cm2. If the electron
diffusion coefficient is Dn = 25 cm2/s, determine the electron concentration
at x = 0.
8. The conductivity of a semiconductor layer varies with depth as
  x    o exp( x d ) where  o  20 (  cm) 1 and d = 0.3 𝜇m. If the thickness of the semiconductor layer
is t = 1.5 𝜇m, determine the average conductivity of this layer.
9. In n-type silicon, the Fermi energy level varies linearly with distance over a short range. At x = 0, EF - Ei
= 0.4 eV and, at x =10-3 cm, EF - Ei = 0.15 eV. (a) Write the expression for the electron concentration
over the distance. (b) If the electron diffusion coefficient is Dn = 25 cm2/s, calculate the electron diffusion
current density at (i) x = 0 and (ii) x = 5×10-4 cm
10. An n-type silicon resistor has a length L = 150 𝜇m, width W = 7.5 𝜇m, and thickness T = 1 𝜇m. A voltage
of 2 V is applied across the length of the resistor. The donor impurity concentration varies linearly
through the thickness of the resistor with Nd = 2 1016 cm-3 at the top surface and Nd = 2 1015 cm-3 at the
bottom surface. Assume an average carrier mobility of 𝜇n = 750 cm2/V-s. (a) What is the electric field in

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the resistor? (b) Determine the average conductivity of the silicon. (c) Calculate the current in the
resistor.
11. Use the total current expression for electrons and holes at thermal equilibrium to derive the Einstein
relations.
12. An electric field has a non-zero value at a plane x1 (perpendicular to the x-axis) inside a silicon crystal. At
x1, the electron density is 106 cm-3 and the electron density is nonuniform in a direction perpendicular to the
plane. It is observed that no electron current flows across the plane. a) Explain why no current is flowing .
b) If the electric field is -103 Vcm-1 (i.e. 103 Vm-1 in the negative x-direction), what is the electron gradient
perpendicular to the plane?
13. An intrinsic Si sample is doped with donors from one side such that Nd = Noexp[-ax]. a) Find an expression
-1
for x at equilibrium over the range for which Nd >> ni. Also sketch x taking a = 1 (mm) . b) Sketch the
variation of the semiconductor energy bands induced by the electric field computed in V/cm
14. The total current in a semiconductor is constant and is composed of electron drift current and hole
diffusion current. The electron concentration is constant and equal to 1016 cm-3. The hole concentration is
given by
 x 
p ( x)  1015 exp   cm 3 ( x  0),
 L 
where L = 12 μm and x in cm. The hole diffusion coefficient is Dp = 12 cm2/s and the electron mobility is
𝜇n = 1000 cm2/.V-s. The total current density is J = 4.8 A/cm2. Calculate (a) the hole diffusion current
density versus x, (b) the electron current density versus x, and (c) the electric field versus x.
15. Assume that an n-type semiconductor is uniformly illuminated, producing a uniform excess generation
rate G. Show that in steady state the change in the semiconductor conductivity is given by
  e(  n   p ) p G
16. GaAs, at T = 300 K, is uniformly doped with acceptor impurity atoms to a concentration of Na = 2 1016
cm-3. Assume minority carrier lifetime of 5 10-7s. (a) Determine the thermal-equilibrium generation rate
for electrons and holes (b) Determine the thermal-equilibrium recombination rate for electrons and holes
(c) Determine the electron–hole net recombination rate if the excess electron concentration is ∆n =
5 1014 cm-3.
17. The next Fig. presents an energy band diagram of silicon sample of length 3L. Answer the following
questions:
a) Roughly sketch n and p versus x
b) Calculate p & n at x = 2L
c) Plot the electric field () inside the
Ec Ei  Ef
semiconductor as a function of x. Eg / 3 Eg / 6
(indicate the electric field values at Ef
x = L/3) Ei
d) Sketch the electrostatic potential (V)
inside the semiconductor as a function Ev
of x with respect to reference potential
x
at x = -L (indicate the potential value at
-L 0 L/4 L 2L
x = L/4 and x = L)
e) What is the direction of the electron diffusion current at x = L/2

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f) What is the magnitude of the total current density at x = L/4

g) Is the sample connected to external voltage source? Explain how you arrived at your answer
h) An electron at x = L/4 with a total energy E = Ec moves toward x = 2L without changing its
total energy. What is the kinetic energy of the electron upon arriving at x = L?

18. The aside figure presents an energy band

diagram of non-uniform doped Silicon

Electron energy
semiconductor sample of length 4L. Let the
samle be maintained at 300 K with Ei -Ef = EG/4
at x =  L and Ef -Ei = EG/4 at x = 0. Note the
choice of Ef as the energy reference level. Use
the cited energy band diagram to answer the
following questions 0
(a) Do equilibrium conditions prevail? How do
you know?
(b) Roughly sketch n and p versus x
(c) Sketch the electric field () inside the
semiconductor as a function of x.
(d) Sketch the electrostatic potential (V) inside
the semiconductor as a function of x.
(e) Roughly sketch the electron diffusion current inside the semiconductor as a function of x.

19. A laser beam striking a uniformly doped p-type bar Laser Beam
of silicon maintained at room temperature causes a
steady state excess of ∆np = 101l cm-3 electrons at x = ∆np(-L) = 0 ∆np(+L) = 0
0. Note that the laser induced photo generation only
occurs at x =0. As pictured in the next Fig., the bar
extends from x = -L to x = +L and ∆np(-L) = ∆np(+L)
= 0. Na = 1016cm-3and   0 inside the bar. x
-L 0 +L

(a) What are the dominant physical processes that determine the steady-state excess electron
concentration [∆np(x)] in the regions of the bar removed from x = 0?
(b) Sketch the expected general form of ∆np( x) inside the bar (-L x L) under steady state
conditions.
(c) Does low level injection exist under steady state conditions? Explain.
(d) Reduced to the simplest possible form, write down the equation that must be solved to determine
∆np( x) for 0 < x L.
(e) What is the general solution to the part (d) equation?
(f) What are the boundary conditions that must be applied in solving the part (d) equation to determine
the solution constants?
(g) Complete the solution by applying the boundary conditions to obtain ∆np( x) for 0<x<:L.
(h) What is the limit of the part (g) solution if L→ ∞?

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