POWER ELECTRONICS (5032)

Module 1
Power electronics components and Commutation techniques
• To explain the structure and characteristics of UJT and its application.
• To describe the structure and operation of N-channel JFET with its characteristics.
• To describe the structure and operation of P-channel JFET with its characteristics.
• To distinguish between JFET and BJT.
• To list the applications of BJT.
• To explain the operation of MOSFET.
• To differentiate JFET, MOSFET, and IGBT.
• To describe the operation of DIAC.
• To describe the operation of TRIAC.
• To explain the structure of SCR.
• To explain the characteristics of SCR.
• To describe the terms – holding current, latching current, turn on time and turn off time
• To explain the different methods of turning on of SCR- resistance triggering, voltage triggering,
dv/dt triggering, gate triggering.
• To understand the commutation technique
• To explain the natural commutation.
• To explain the forced commutation.
• To explain the gate turn off method.

Contents
Power electronic components - characteristics of UJT and its application- construction & operation of N -
channel and P-channel JFET. Construction & operation of JFET with characteristics- JFET comparison with
BJT,MOSFET-Differentiate JFET,MOSFET, and IGBT-Symbols, operations and characteristics of di, tri, SCR –
constructional features – operation – transistor analogy – characteristics – definitions -holding current –
latching current - turn on time – turn off time-different methods of turn on and turning off SCR -snubber
circuits for the protection of SCR

Electronics
Electronics is the branch of science that deals with the control of electrons. The major functions of
electronics are
 Amplification
 Oscillation
 Rectification
 Switching.
These functions are performed by electronic devices like Transistor, Diode etc.
Electronic circuits generally perform information transfer in both analog and digital form. It deals low
power signals like an amplifier.

Electricity
 • No people consume electricity directly. But they use electricity in daily life for communication, light,
heat, mechanical work and for entertainment and life comfort.
• Electrical engineering involves Power conversion, control and management.
• It deals with huge amount of power in KW or MW.
• The electrical power flow control is normally performed with switches. Mechanical switch or
semiconductor switch are used for switching.
• Electrical engineering involves generation, Transmission, distribution and utilization of electrical
power.

Power electronics
• The study of electronic circuits used to control electric power flow.
• Power electronic circuits consist of large semiconductor devices.
• These circuits handle large amount of power.
• The power electronic circuits control the flow of electrical energy between an electrical source and
a load.
• The power control is performed by semiconductor switches.
• Thus power electronics is the study of electronic switching power converters.

Power electronic system

• A power electronic system consists of an energy source, an electric load, A Power electronic circuit
and an electronic control circuit.
• Energy source is single phase or poly phase Electrical supply.
• Electric load is one which provides heat, light or mechanical work.
• Power electronic circuit is a semiconductor switch.
• The electronic control circuit controls the switching actions.

 The semiconductor switches used in power electronic converters are

• SCR (Silicon Controlled Rectifier)
• Power diode
• Power MOSFET ( Metal oxide semiconductor Field effect transistor)
• IGBT ( Insulated gate Bipolar Transistor)
• TRIAC ( Three terminal two way AC controller)
 The Power semiconductor devices are assisted by Resistors, Inductors and Capacitors.
 The semiconductor devices used in control circuit are
• UJT ( Unijunction Transistor)
• FET (Field Effect Transistor)
• BJT (Bi polar junction Transistor)
• DIAC ( Two terminal two way AC controller)
  The semiconductor devices are assisted by Resistors, Inductors and Capacitors to perform electronic
functions.

Power converter

• It is a static device that converts

• AC to DC
• DC to AC
• DC to DC
• AC to AC RECTIFIER

AA
AC DC

CYCLO DC CHOPPER
CONVERTER
AC DC

INVERTER

Applications of power converters

• Power supply for space shuttle, aircraft and satellites.
• Light dimmers and flashers
• Arc furnace and welding
• Battery charger and UPS
• Electric Traction
• HVDC systems and HVAC systems.
Merits of power electronic converters
• Lower switching loss
• No arc forming during switching
• High efficiency
• More reliable.
• Long life because there is no moving part.
• Fast response
• Small size
• Less routine maintenance

Demerits of power electronic converters

• Produce harmonics in the supply system and load circuit. Harmonics cause waveform distortion and
heating of motor loads.
• Low power factor operation.
• Low momentary overload capacity
• Power regeneration is difficult
• Require skilled persons for maintenance.
Reference
Power electronics by Dr. PS Bimbhra.
Power electronics by Rashid.
UNI JUNCTION TRANSISTOR (UJT)
• UJT is used in triggering circuits for SCR.
• UJT provide Pulse triggering. Pulse triggering is more efficient than R or RC triggering.
• UJT is a three terminal device. The terminals are named as Emitter (E), Base 1 (B1)
and Base2 (B2).
• The emitter junction is a Diode connected to the junction of Two resistance Rb1 and
Rb2.
• The area between B1 and B2 acts as ordinary Resistance, Rb1 and Rb2.

STRUCTURE SYMBOL
UJT- Construction:
• UJT consists of a N-type silicon bar. Electrical connections are taken out from both
end of this bar. They are called B1 and B2.(base)
• Near to B2 (than B1) a P-type silicon is diffused on the N-type bar.
• Thus a PN junction is formed between Emitter (E) and the bar.
The P type emitter is heavily doped so it have large number of holes. The N region is lightly
doped so it has less electrons. So Resistance between B1 and B2 is very high (10 K-ohm)
• Thus a PN junction is formed between Emitter (E) and the bar.
• UJT has one PN junction so called unijunction transistor.
UJT Equivalent Circuit and Operation:
Operation of UJT :
UJT Characteristics:

Applications of UJT:
• Phase control
• Pulse generation
• Saw tooth wave generation
• Triggering circuits
• Voltage regulation circuits

Assignment:
Explain the working of a UJT oscillator used for SCR triggering with neat diagrams.(15
marks)

JUNCTION FIELD EFFECT TRANSISTOR ( JFET) or FET

• Junction field effect transistor (JFET) is also called FET.
• It is a three terminal device. The terminals are called Drain (D), Source (S) and Gate
(G).
• The current conduction in FET is due to any one type of carrier, that is either by
electrons or holes. So it is called, unipolar device.
• According to the current carriers and the type of semiconductors JFET is classified in
to two. 1. N-type FET and P type FET.
• In N-type FET, majority current carriers are electrons and in P-type FET majority
current carriers are Holes.
• The current conduction through the FET is controlled by an electric field applied
across Gate and Source terminals. So it is called a Voltage controlled device.
 Construction:
• In N-channel FET an N type silicon bar is used as the channel.
• Two P-type silicon is diffused on either side of the channel.
• Thus PN junctions are formed. The Gate terminal is taken out from the P type silicon
pieces which are internally connected.
• The Drain and Source terminals are taken out from the ends of the channel.
• The silicon bar acts as a resistance between Drain and Source. The current flows
through this resistance.
• The current flow from Source to Drain is controlled by Gate terminal voltage. A
reverse bias voltage is applied to G and S.

N- CHANNEL P-CHANNEL

Operation /working:
If Gate is open and a voltage is applied between Drain and Source with drain positive, the
drain current flows through the channel. This current is due to majority carriers.( electrons
in N Type FET).

• When positive voltage is applied to the drain w.r.t source and negative voltage is
applied to Gate and source.
• The PN junctions are reverse biased and depletion regions are formed and penetrated
in to the channel. The depletion region acts as an insulator.
• This cause to reduce the channel width. Then channel resistance increased and Drain
current reduced.
• If the negative
gative voltage at gate is increased, depletion layer width increases and they
meet at a point . Then drain current cut off completely. Thus drain current can be
controlled by varying reverse voltage at the gate terminal.

Characteristics
Out put or drain chara. Transfer chara.
Merits over BJT:
• Unipolar device
• High input impedance provides isolation between input and output circuits.
• Voltage controlled device –so small gate current.
• No junctions along channel-so less noise.
• High frequency response.
• Small size and high efficiency.

Reference: JB Gupta, Fundamentals of EEE.

Asst: 1. Differentiate JFET and BJT (5 marks)
2. List the applications of BJT(5 marks)

METAL OXIDE SEMICONDUCTOR FIELD EFFECT

TRANSISTOR ( MOSFET) or INSULATED GATE FET (IGFET)
• MOSFET is an advanced form of JFET. MOSFET has very high input impedance than
JFET.
• It has mainly three terminals, Source (S), Drain (D) and Gate (G). Also it has a fourth
terminal called Substrate (ss). Normally it is connected to the Source terminal.
• Its Gate is insulated from the channel by a thin layer of Silicon dioxide (SiO2).
• It can be operated in two modes 1. Depletion mode 2. Enhancement mode.
• There are four types of MOSFETS 1. N channel depletion type,2. P channel depletion
type 3. N channel enhancement type 4. P channel enhancement type.

CONSTRUCTION of N channel depletion type MOSFET:

• On a lightly doped P-type silicon bar called substrate two heavily doped N-type
material are diffused to form Source and Drain.
• An N-channel is formed between Source and Drain by diffusion.
• An insulating layer of silicon dioxide is placed over the substrate.
• Aluminum metallic contacts are made in contact with Source and Drain.
 • In between Source and Drain terminals, a metallic plate is placed over the silicon
dioxide layer and Gate terminal is taken out.
• The insulating layer between Gate and N channel gives high input impedance.

Symbol of depletion type MOSFET

MOSFET:

N-Channel P-Channel

Operation:
Characteristics:

Enhancement type MOSFET

CONSTRUCTION of N channel Enhancement type MOSFET:
MOSFET

• On a lightly doped P-type

type silicon bar called substrate two heavily doped N-type
N
materials are diffused to form Source and Drain.
• An insulating layer of silicon dioxide is placed over the subs
substrate.
• Aluminum metallic contacts are made in contact with Source and Drain.
• In between Source and Drain terminals, a metallic plate is placed over the silicon
dioxide layer and Gate terminal is taken out.
• An induced N-channel
channel is formed between Source and Drain when a positive gate
voltage is applied.
Symbol of N channel Enhancement type MOSFET
MOSFET:

N-channel
channel P-Channel

Operation:
Characteristics:

INSULATED GATE BIPOLAR TRANSISTOR ( IGBT) or MOS

IGT
• IGBT gives combined advantages of both MOSFET and BJT.
• It has high input impedance and low on state voltage drop.
• It has three terminals, Emitter ( E ),Collector ( C), Gate (G).
• It is a voltage controlled device.
Applications:
• AC and DC motor drives.
• UPS and Power supplies.
• Drives for relays and contactors.
• Drive for solenoids.

Construction of IGBT:

Symbol
OPERATION:
Equivalent circuit of IGBT::

IGBT characteristics:
DIAC

Structure of DIAC:

(a) (b) (c)

Constructional details and Operation
Operation:
CHARACTERISTICS:

Applications of DIAC:
• Triggering a TRIAC
• Light dimming circuits
• Heat controllers
• AC motor speed control
• Fan sped controllers

TRIAC
Symbol and construction:

(a) (b) (c) (d)

• In structure A TRIAC consists of two SCR connected in anti parallel.

• Its symbol shows that two diodes connected in opposite directions with a gate
terminal.
• The gate is placed near MT1 and MT2 is at the other end.
• It can conducts current in both directions.
• The characteristics of the TRIAC is almost similar to that of a Diac.
• Positive or negative voltage can be applied to the gate terminal.
• Positive or negative voltage can be applied to MT1 w.r.t MT2
• Each terminal is in contact with a PN region.

CROSS SECTIONAL VIEW OF TRIAC:

Characteristics:
• The TRIAC is operated in first quadrant with positive voltage on MT2 and Gate or In
third quadrant with Negative voltage on MT2 and Gate.
• When Gate current is Zero(Ig=o) the device conducts when potential across main
terminals is greater than break over voltage.
• When gate current increased the device start conducts earlier than break over
voltage.
APPLICATIONS:
• Lamp Dimmers
• Speed control of series motors.
• Speed control of induction motors.
• Heat control.

SILICON CONTROLLED RECTIFIER (SCR)

THYRISTOR family
• DIAC
• TRIAC
• SCS ( silicon controlled switch)
• PUT ( Programmable unijunction Transistor)
• GTO ( Gate turn off Thyristor)
• RCT ( Reverse conducting thyristor)
• LASCR (Light activated SCR)
• SCR ( silicon controlled rectifier)
Construction:

• A THYRISTOR (SCR) consists of four layers of alternate p-type and n-type

semiconductors forming three junctions J1, J2, and J3.
• Gate terminal is placed near cathode in threaded type SCR. The terminal connected to
outer P region is called anode, and to outer N region is called cathode and to the
inner P region is called Gate.
• It is a controlled rectifier. It blocks current flow from anode to cathode until it is
triggered by a suitable gate signal between gate and cathode.
• A THYRISTOR can be turned on by applying forward voltage greater than break over
voltage across Anode to cathode without a gate signal.

Characteristics:

(a) ( b)
 • The circuit arrangements for determining SCR characteristics is shown in Fig.(a) and
its Characteristics is shown in figure (b).
• The VI characteristics is the relation between anode voltage Va and anode current Ia
with different gate currents.
• A thyristor has three basic modes of operation.
1. Reverse blocking mode
2. Forward blocking mode ( off state)
3. Forward conduction mode (on state).

Reverse blocking mode:

Forward blocking mode:

Forward conduction mode
mode:

APPLICATIONS:
• Phase controllers
• Speed control of DC shunt motors.
• Battery chargers
• Heat control.
• Regulated power supplies
• Inverters
• UPS

Latching current and Holding current

current:
Switching characteristics:

Turn on time and Turn off time

time:
Circuit turn off time:

SILICON CONTROLLED RECTIFIER (SCR)

TRANSISTOR ANALOGY
Two transistor model of SCR
SCR:

• Fig.(a) shows schematic diagram of an SCR. From this figure two transistor model is
obtained by bisecting the two middle layers.

• One half is a PNP transistor with junctions J1

J1-J2
2 and other is a NPN transistor with
junctions J2-J3.
The base of transistor Q1 is connected to the collector of Q2. The base of Q2 is
connected to collector of Q1 and Gate terminal is taken out.
Emitter of Q1 acts as Anode and emitter of Q2 acts as cath
cathode.
Turn on methods for SCR
• Forward voltage triggering
• Gate triggering
• dv/dt triggering
• Temperature triggering
• Light triggering
Variation of Forward break over voltage with gate current:
current

• Once the gate pulse is applied the J2 junction breaks and scr starts conduction, the
gate current is not required for maintaining conduction.
• If gate pulse is removed or switch off gate pulse it will not effect conduction and SCR
will remain in ON state. But for starting conduction the anode current must be above
latching current and gate pulse must be applied.
• Once the SCR conducts gate loss control and for turn off the SCR the anode current
must be reduced below holding current.
• The latching current iss associated with turn on process and holding current is
associated with turn off process.

Lay out of gate triggering sheme

sheme:
Resistance triggering:
This scheme provide firing angle control from 0 to 90 degrees .

RC triggering:

UJT OSCILLATOR CIRCUIT FOR TRIGGERING:

dv/dt triggering ( Rate of change of voltage triggering)
In this method the anode to cathode forward voltage is increased rapidly. This produces a
charging current, which trigger the SCR.
Temperature triggering
The temperature at reverse biased junction J2 increases the leakage current increases. This
again cause increase in junction temperature and produce more electrons .Finally this
junction breaks and SCR will turned ON.
Light triggering
In special type SCR called LASCR, the inner P layer is exposed to light through a transparent
part called recess or niche. When the SCR I irradiated charge carriers are generated at
junction J2 and breaks it. Then Scr will conducts with Forward voltage across anode to
cathode. LASCR provide isolation between power and control circuits.

Turn off methods for SCR

• Turn off process is known as commutation.
• Turn off of a SCR means bringing the device form forward conduction state to
forward blocking state.
• SCR turn off requires-
1. Anode current reduced below holding current.
2. Reverse voltage is applied for a certain time for reverse recovery and continue in
blocking mode

Commutation techniques
1. Natural commutation or Line commutation- Class F
2. Load commutation - Class A
3. Forced commutation
I. Resonant pulse commutation- Class B
II. Complementary commutation – Class C
III. Impulse commutation - Class D
4. External pulse commutation- Class E

Natural commutation:
• It is also called Class F commutation.
• This method is employed for phase controlled converters, Line commutated inverters,
ac voltage controllers and step down cyclo converters.
• When a 50 Hz ac supply is applied to a SCR circuit, there will be a polarity change in
every 10 ms. During positive half cycle of the ac voltage, anode is positive with
 respect to cathode, and when gate voltage is applied the SCR starts conduction and
current flowing through the circuit.
• Even though gate pulse is switched off the SCR Conducts during positive half cycle.

• During negative half cycle the anode become negative with respect to cathode with
no gate pulse the SCR stop conduction. This is because reverse bias applied across the
SCR during negative half cycle and anode current reaches below holding current of
SCR.
• In line or natural commutation, natural reversal of ac supply commutate the
conducting SCR.
• In the circuit diagram shown in Fig (a), the SCR acts as a half wave rectifier. It is called
phase controlled rectifier.

Load commutation:
• Load commutation is employed in series inverters.
• In load commutation the commutating elements are L and C, and they are connected
in series with the load( Fig. a) or C is connected in parallel with the load (Fig. b). The
resistance R is the load resistance.
• For low resistance load L and C are connected in series with the load and for high
resistance load C is connected in parallel with the load.
• This circuit provides under damped oscillation.
 • When these circuits are energized from DC, the current rises to a maximum value
and then begins to falls. W
When
hen current reaches zero and tends to reverse the SCR
turned off.
• Load commutation is not possible in AC circuits. It is applicable to DC circuits only.
• Load commutation is also called Class A commutation or Resonant commutation or
self commutation.
Forced commutation:
• In forced commutation the commutating components L and C do not carry load
current continuously.
• In forced commutation, forward anode current is forced to zero by an external
commutation circuit.
• Forced commutation employed in choppers and inverters. There are three types of
forced commutation techniques are available.
1. Resonant pulse commutation
commutation- Class B
2. Complementary commutation – Class C
3. Impulse commutation - Class D
Resonant pulse commutation
commutation-Class B:
Complementary commutation – Class C:

Impulse commutation - Class D

D:
• Initially T1 is conducting and source voltage applied across the load.
• When TA is turned on capacitor voltage appears across T1 in reverse direction and
turn it off. The load current is now carried by C and TA.
• Now the capacitor charged in reverse direction. When capacitor voltage equal to
source voltage TA turned off.
• When TA is turned on a reverse voltage Vs suddenly applied across T1. So this method
is called voltage commutation. It is also called auxiliary commutation.
• When TA is turned on capacitor is conne
connected
cted across T1. So it is called parallel
capacitor commutation.
External pulse commutation:

• In this a pulse current is obtained from an external source to turn off a conducting
SCR. This current pulse must have a peak value greater than the load current.
• Initially T1 provide load current. When T3 is turned on ,T3,L,C formed an oscillatory
circuit and C charges to +2V1 volts. When C completed charging current through T3
become zero and turned it off.
• For turning off main SCR, T1 turn on T2. Then a reverse voltage applied across T1 by
the capacitor voltage. Thus T1 turned off. After T1 is off the capacitor discharges
through the load.

GTO
Gate turn off Thyristor:
 • An ordinary SCR cannot be turned off by its gate pulse. With sufficient forward anode
ano
voltage and positive gate pulse it will turned on.
• Once SCR starts conducts it will continue current flow even when gate pulse is
removed.
• To turn off this SCR anode voltage is to be reduced below Holding current and a
reverse voltage must be applie
applied across anode to cathode.
• GTO is turned on by a positive gate pulse and turned off by a negative gate pulse.

Advantages and Disadvantages of GTO

GTO:
Advantages
• Faster switching speed.
• GTO circuits are compact and less weight than SCR circuit.
• No forced commutation losses. So it has high efficiency.
• It helps to reduce electromagnetic noise by eliminating commutation chokes.
Disadvantages
• Require large latching current and holding current.
• On state power loss is more.
• More gate triggering current
rrent required.

Applications:
• High performance drive systems. Such as rolling mills, Robotics and machine tools.
• In electric traction requires less weight.
• Inverters and DC choppers.
• In Circuits that wants to replace forced commutation.
GTO available with 2500V and 1400 A and more.
Snubber circuits for SCR protection
protection: