Southeast University
School of Science and Engineering
Department of Electrical and Electronic Engineering
Program: [Link]. Engineering in EEE
Lab Manual
EEE230: Electronics Laboratory
Course Credits:1.0, Prerequisites: EEE 220
Experiment No: 02
Experiment Title: Study of the Characteristics of Zener Diode
Objectives:
To study and verify the functionality of Zener diode in forward bias and reverse bias and to
1. Plot Volt-Ampere Characteristics of Zener Diode.
2. Find Zener Breakdown Voltage in Reverse Biased conditions.
3. Calculate static and dynamic resistance of the Zener diode in both forward and reverse biased
conditions (before, after break down voltages).
Theory:
Zener diodes are a special kind of diode which permits current to flow in the forward direction. What
makes them different from other diodes is that Zener diodes will also allow current to flow in the reverse
direction when the voltage is above a certain value. This breakdown voltage is known as the Zener voltage.
In a standard diode, the Zener voltage is high, and the diode is permanently damaged if a reverse current
above that value is allowed to pass through it. Zener diodes are designed in a way where the Zener voltage
is a much lower value. There is a controlled breakdown which does not damage the diode when a reverse
current above the Zener voltage passes through a Zener diode.
The most common values for nominal working voltage are 5.1 V, 5.6 V,6.2 V,12 V and 15 V. We also
carry Zener diodes with nominal working voltage up to 1 kV. Forward (drive) current can have a range
from 200 uA to 200 A, with the most common forward (drive) current being 10 mA or 200 mA.
In the forward bias direction, the zener diode behaves like an ordinary silicon diode.
In the reverse bias direction, there is practically no reverse current flow until the breakdown voltage is
reached. When this occurs there is a sharp increase in reverse current. Varying amount of reverse current
can pass through the diode without damaging it. The breakdown voltage or zener voltage (VZ) across the
diode remains relatively constant. The maximum reverse current is limited, however, by the wattage rating
of the diode.
Avalanche Break down:
When the diode is in the reverse bias condition, the width of the depletion region is more. If both p-side and
n- side of the diode are lightly doped, depletion region at the junction widens. In reverse bias, the minority
charge carrier current flows through junction. As the applied reverse voltage increases the minority carriers
acquire sufficient energy to collide with the carriers in the covalent bonds inside the depletion region. As a
result, the bond breaks and electron hole pairs are generated. The process becomes cumulative and leads to
the generation of a large number of charge carriers resulting in Avalanche Breakdown.
Zener Break down:
If both p-side and n-side of the diode are heavily doped, depletion region at the junction reduces compared
to the width in normal doping. Applying a reverse bias causes a strong electric field get applied across the
device. As the reverse bias is increased, the Electric field becomes strong enough to rupture covalent bonds
and generate large number of charge carriers. Such sudden increase in the number of charge carriers due to
rupture of covalent bonds under the influence of strong electric field is termed as Zener breakdown.
List of Equipment:
1. Zener Diode (BZX55C 5.1)
2. Bread Board
3. Resistor
4. DC voltage source
5. Ammeter
6. Voltmeter
7. Connecting wire
Problem/Circuit Diagram:
Fig (1)-Forward Bias Condition:
(2) -Reverse Bias Condition:
Working Procedure:
Procedure:
a) Forward Bias Condition:
1. Connect the circuit as shown in figure (1).
2. Initially vary Vs in steps of O.I V. Once the current starts increasing vary Vs in steps of 1V up to
[Link] down the corresponding readings of Vzf and Izf.
b) Reverse Bias Condition:
1. Connect the circuit as shown in figure (2).
2. Vary Vs gradually in steps of 1V up to 12V and note down the corresponding readings of Vzr and
Izr.
3. Tabulate different reverse currents obtained for different reverse voltages.
Data Table/Graph:
Table:1 Forward Bias Condition:
RPS Voltage Vs(volts) Forward Voltage across the diode Vzf(volts) Forward Current through the diode Izf/(mA)
Table:2 Reverse Bias Condition:
RPS Voltage Vs(volts) Reverse Voltage across the diode Vzr(volts) Reverse Current through the diode Izr/(mA)
Expected Graph: