Corporate Profile

Hynix Semiconductor is a leading supplier of advanced semiconductor memory solutions and

Image sensor products. We design, develop, manufacture and market a wide variety of DRAM
and NAND Flash memories and CMOS Image Sensors (CIS). These memory components are
essential in today’s leading-edge computing, consumer and wireless communications applica-
tions. Image Sensors are used in a wide range of portable consumer electronics products such as
handsets and handheld games.
| DRAM and NAND Flash memories are focus products | CMOS Image Sensors will diversify Hynix product portfolio
| 2009 Revenues of USD $6.2B | Market capitalization of USD $15B as of October 2010
| Global presence with 3 manufacturing sites and 30 sales offices worldwide | 21,227 employees worldwide

Recent Accomplishments
2011 03 Developed the world's largest DRAM with TSV technology 2008 12 Developed the world’s first 2Gb Mobile DRAM
11 Introduced Industry’s fastest 7Gbps, 1Gb GDDR5 Graphics DRAM
2010 12 Developed 40nm class 2Gb DDR3 2133Mbps 04 Developed the world’s fastest Mobile LPDDR2
10 Introduced 30nm class based 2.5 inches SSD 02 Introduced 2-Rank 8GB DDR2 RDIMM
09 Introduced New 2M shellUT Type CSP Image Sensor 01 Announced 800MHz, 1GB/2GB UDIMM Validation
07 Developed 40nm class 2Gb DDR3 1866Mbps
06 Developed 40nm class DDR3 operating at 1.25V 2007 11 Acquired Intel validation for 1Gb DDR2 DRAM
04 Developed DDR3 16GB LRDIMM Developed industry’s first 1Gb GDDR5 DRAM
03 Developed industry’s first stack based on ‘Wafer Level Package’ technology 09 Developed the world’s first NAND Flash MCP with 24 stacked chips
02 Developed 40nm class 64Gb NAND Flash memory 08 Developed industry’s fastest and smallest 1Gb Mobile DRAM
01 Developed the world’s first 2Gb Mobile Low Power DDR2 DRAM 05 Acquired the industry’s first validation on DDR3 DRAMs from Intel
03 Developed the world’s fastest ECC Mobile DRAM
2009
12 Introduced the world’s first 40nm class 2Gb GDDR5 DRAM 01 Developed the fastest memory module based on
11 Acquired Intel validation for 40nm class 2Gb DDR3 Products ‘Wafer Level Package’ technology
10 Introduced second generation 1Gb DDR3
08 Introduced 4Gb Mobile DDR SDRAM supported on Intel’s Moorestown platform
04 Developed the world’s first Low Power-High speed Mobile 1Gb DDR2 DRAM
03 Announced the world’s first 8GB 2-Rank DDR3 R-DIMM validation
02 Developed the world’s first 40nm class DDR3 DRAM
01 Acquired Intel validation for the world’s first ultra-high speed DDR3
based 4GB ECC UDIMM for servers
Hynix Dreams Good Memory

Hynix Products

Computing Graphics Consumer & Network Mobile NAND Flash CMOS Image
Memory Memory Memory Memory Sensor

The simply designed symbolic mark of superposition of two circles implies Hynix’s will to develop
environment-friendly products. The image of a sprout and green wings representing reborn nature
symbolizes Hynix’s volitional environmental management initiative. The ‘Eco-mark’ conveys our
passions to contribute to customers and society with ecological practices (Environment Conscious-
ness Outreach), and environmental awareness of each employee (Environment Creates Ourselves)

2006 12 Announced industry’s first 60nm 1Gb DDR2 800MHz based modules 2003
08 Developed the world’s first DRAM 1Gb DDR2
Developed the world’s fastest 200MHz 512Mb mobile DRAM 07 Developed the world’s first ultra-high speed DDR500
09 Launched 300mm research fab line 06 Acquired the industry’s first Intel validation for 512Mb DDR400
03 Acquired the industry’s first validation on 80nm 512Mb DDR2 05 Launched production on 0.10-micron process technology
DRAMs from Intel Launched volume production of ultra-low power 256Mb SDRAM
01 Announced joint development plan of DOC H3 (new generation 04 Signed agreement with STMicroelectronics to cooperate in NAND
Disk On Chip embedded flash drive) with M-Systems Flash memory development
03 Introduced the world’s first commercially applicable mega-level FeRAM
2005 12 Developed the world’s first 512Mb GDDR4, the industry’s
fastest and highest density graphics DRAM 2002 10 Developed 0.10-micron 512MB DDR
11 Launched the industry’s first JEDEC standard 8GB DDR2 R-DIMM 08 Developed the world’s first high-density, wide-bandwidth 256MB DDR
04 Launched Hynix-ST joint venture construction in Wuxi City, Jiangsu 06 Developed the world’s first 256MB SDR for high-end consumer application
Province, China 03 Developed 1G DDR DRAM module

2004 03 Developed the industry’s first ultra-high speed DDR 550MHz Acquired 2001 12 Developed the world’s first 128Mb DDR for graphics
1Gb DDR2 validation from Intel 08 Completed spin-off from Hyundai Group
02 Developed NAND Flash memory 03 Changed the Company name to “Hynix Semiconductor Inc.”

1999 10 Merged with LG Semicon., Ltd.

1983 02 Founded Hyundai Electronics Industries Co., Ltd.

 Computing Memory
DDR3
Pushing the Limits of Performance

General Description
The mainstream, DDR3 SDRAM, can transfer data twice as fast as the current generation DDR2 SDRAM’s. DDR3 SDRAM boasts high per-
formance and low power consumption. It supports data transfer rate of up to 1.6Gb/s and operates at a lower power supply voltage of 1.5V,
compared to DDR2. The DDR3 SDRAM is eco-friendly for it can operate at even lower power supply voltage of 1.35V contributing to lower
power dissipation and extended battery life in mobile systems. The low-power operation of DDR3L, 1.35V DDR3 SDRAM, is also beneficial in
high-density memory systems in power constrained applications such as servers and data centers. Using Hynix low-power memory modules
can help customers reduce power consumption and utility expenditures, improve reliability and reduce carbon emissions. Hynix plans to offer
DDR3 in densities of 1Gb to 4Gb, and is currently in volume production on 2Gb DDR3. Hynix’s DDR3 modules exploit functions such as ZQ cali-
bration, fly-by topology, dynamic on-die-termination, and levelization to ensure better signal integrity which guarantees higher performance.

DDR3 VS. DDR3L DDR2 VS. DDR3

Power Comparison (Watt)
Items DDR2 DDR3 / DDR3L
Data Rate 400, 533, 667, 800Mbps 800,1066,1333,1600Mbps
DDR3 DDR3 1.5V ± 0.075V (DDR3)
VDD / VDDQ 1.8V +0.1V / -0.1V
1.35V+0.1V / -0.067V (DDR3L)

DDR3L DDR3L Support Density 256Mb ~ 4Gb 1Gb ~ 4Gb

512Mb : 4 Bank
Bank 8 Bank
1Gb : 8 Bank
Data Pre-fetch 4 bit 8 bit
60 FBGA for x4 / x8 78 FBGA for x4 / x8
Package Type
84 FBGA for x16 96 FBGA for x16
15% 17%
Interface SSTL-18 SSTL -15
DQS Signaling Single / Differential Differential Only
Driver Calibration Off-Chip Driver Calibration Self Calibration with ZQ pin
DQS-CLK De-Skewing ⅹ ○ (Write Leveling)

4GB 8GB On Die Termination ○ ○ / Dynamic ODT

( Calculation with 2R×4 RDIMM, 1333Mbps )

Reset pin ⅹ ○ (Soft power-up)

Key Features of High Speed Interface

ZQ Calibration Write Levelization
•Reduce variation by Vdd / temp •Minimize tDQSS by de-skewing
•Minimize output skew / jitter •Gain system timing margin

Dynamic ODT Fly-by topology

•Changeable termination strength •For higher frequencies
without issuing an MRS command •On-DIMM termination
•Improved Signal Integrity

04
 PC & Server Memory
High Density and Reliability

General Description
Environmental protection has become a priority of governments and corporations worldwide. Applications such as highly virtualized data cen-
ters, servers and supercomputers that consume a lot of power can take advantage of the low power features of the DDR3 SDRAM to enable
cooler, power efficient systems, while lowering costs of utilities.
Hynix is responding to the industry demand for eco-friendly or ‘green’ products that reduce power consumption, improve system reliabil-
ity and reduce carbon emissions. The new Hynix 1.5V 1Gb DDR3 features 25% lower power consumption than competing solutions. The
1.35V(DDR3L) product yields an additional 20% power savings and will be attractive solution for applications requiring energy star compliance.
This product would also be ideal in mobile applications, such as notebooks, where it markedly extends battery life. The new design philosophy
adopted on Hynix’s advanced 30nm process, will benefit future high density DRAM components. The new 30nm process along with Hynix’s de-
sign optimization and internal signaling innovations, reduces power consumption and enhances performance. Devices operating at 1.5V and
1.35V(Low Voltage) exhibit similar bandwidth characteristics. The demand for low power consumption in mobile systems such as notebooks
and server systems such as datacenters, is the emerging trend.
Hynix’s strategy is to satisfy customers needs for reduced power consumption and improved performance with technology advancements
such as the 30nm class product.

Application Transition to Notebook Memory Speed Transition in Notebook

▼ Notebook Portion
100% Desktop 100% DDR2 667

80%
40% 80%
43% DDR2 800
46%
51%
60% 59% 60%
DDR3 1066
60%
40% 57% 40%
54% DDR3 1333
49%
20% 41% 20%
Notebook
DDR3 1600
0% 0%
2007 2008 2009 2010 2011 Q1’09 Q2 Q3 Q4 Q1’10 Q2 Q3 Q4 Q1’11 Q2
( Source : Hynix Marketing ) ( Source : Hynix Marketing )

A crossover to mobile computers from the tradition desktop The technology leap from DDR2 to DDR3 doubles system
has already occurred. Declining prices is the primary driv- performance. As DDR3 offers superior performance and
ing factors, especially in light of the current global economic power savings, notebooks have widely adopted DDR3 memo-
conditions. Mobility and weight are other features that make ry. With rapid transition to DDR3, processor vendors are sup-
mobile computers attractive to consumers. porting DDR3 platforms at speeds up to 1333Mbps. After the
launch of the mobile PC CPU supporting 1600Mbps in Janu-
ary 2011, OEMs will gradually adopt 1600Mbps SODIMM in
their mobile platforms.

SODIMM RDIMM
Density 4GB SODIMM Density 16GB RDIMM
Organization 512Mx64 Organization 2Gx72
Speed 1600Mbps Speed 1333Mbps
Number of Rank 2 Ranks Number of Rank 4 Ranks
Package Halogen-Free Package Halogen-Free

05
 Computing Memory
Product Line-up

DDR3 SDRAM MODULE (240pin-UDIMM)

MODULE
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
1600-111111 HMT41GU6MFR8C-PB FBGA (78ball) 2 30mm Q2 '11
1Gx64 512Mx8
1333-999 HMT41GU6MFR8C-H9 FBGA (78ball) 2 30mm Q2 '11
8GB
1600-111111 HMT41GU7MFR8C-PB FBGA (78ball) 2 30mm Q2 '11
1Gx72 512Mx8
1333-999 HMT41GU7MFR8C-H9 FBGA (78ball) 2 30mm Q2 '11
HMT351U6BFR8C-PB FBGA (82ball) 2 30mm Now
1600-111111
HMT351U6CFR8C-PB FBGA (78ball) 2 30mm Now
512Mx64 256Mx8
HMT351U6BFR8C-H9 FBGA (82ball) 2 30mm Now
1333-999
HMT351U6CFR8C-H9 FBGA (78ball) 2 30mm Now
4GB
HMT351U7BFR8C-PB FBGA (82ball) 2 30mm Now
1600-111111
HMT351U7CFR8C-PB FBGA (78ball) 2 30mm Now
512Mx72 256Mx8
HMT351U7BFR8C-H9 FBGA (82ball) 2 30mm Now
1333-999
HMT351U7CFR8C-H9 FBGA (78ball) 2 30mm Now
HMT125U6BFR8C-H9 FBGA (78ball) 2 30mm Now
1.5V 128Mx8 1333-999
HMT125U6TFR8C-H9 FBGA (78ball) 2 30mm Now
HMT325U6BFR8C-PB FBGA (82ball) 1 30mm Now
256Mx64 1600-111111
HMT325U6CFR8C-PB FBGA (78ball) 1 30mm Now
256Mx8
HMT325U6BFR8C-H9 FBGA (82ball) 1 30mm Now
1333-999
2GB HMT325U6CFR8C-H9 FBGA (78ball) 1 30mm Now
128Mx8 1333-999 HMT125U7TFR8C-H9 FBGA (78ball) 2 30mm Now
HMT325U7BFR8C-PB FBGA (82ball) 1 30mm Now
1600-111111
256Mx72 HMT325U7CFR8C-PB FBGA (78ball) 1 30mm Now
256Mx8
HMT325U7BFR8C-H9 FBGA (82ball) 1 30mm Now
1333-999
HMT325U7CFR8C-H9 FBGA (78ball) 1 30mm Now
HMT112U6BFR8C-H9 FBGA (78ball) 1 30mm Now
128Mx64 128Mx8 1333-999
1GB HMT112U6TFR8C-H9 FBGA (78ball) 1 30mm Now
128Mx72 128Mx8 1333-999 HMT112U7TFR8C-H9 FBGA (78ball) 1 30mm Now
8GB 1Gx72 512Mx8 1333-999 HMT41GU7MFR8A-H9 FBGA (78ball) 2 30mm Q2 '11
HMT351U7BFR8A-PB FBGA (82ball) 2 30mm Now
1600-111111
HMT351U7CFR8A-PB FBGA (78ball) 2 30mm Now
4GB 512Mx72 256Mx8
HMT351U7BFR8A-H9 FBGA (82ball) 2 30mm Now
1333-999
HMT351U7CFR8A-H9 FBGA (78ball) 2 30mm Now
1.35V HMT325U7BFR8A-PB FBGA (82ball) 1 30mm Now
1600-111111
HMT325U7CFR8A-PB FBGA (78ball) 1 30mm Now
256Mx72 256Mx8
2GB HMT325U7BFR8A-H9 FBGA (82ball) 1 30mm Now
1333-999
HMT325U7CFR8A-H9 FBGA (78ball) 1 30mm Now
256Mx72 128Mx8 1333-999 HMT125U7TFR8A-H9 FBGA (78ball) 2 30mm Now
1GB 128Mx72 128Mx8 1333-999 HMT112U7TFR8A-H9 FBGA (78ball) 1 30mm Now

DDR3 SDRAM MODULE (240pin-RDIMM)

MODULE
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
1333-999 HMT84GR7MMR4C-H9 FBGA (78ball) 4 30mm Q3 '11
32GB 4Gx72 2Gx4 (DDP)
1066-777 HMT84GR7MMR4C-G7 FBGA (78ball) 4 30mm Q3 '11
1600-111111 HMT42GR7MFR4C-PB FBGA (78ball) 2 30mm Q2 '11
1Gx4
1333-999 HMT42GR7MFR4C-H9 FBGA (78ball) 2 30mm Q2 '11
16GB 2Gx72 HMT42GR7BMR4C-H9 FBGA (82ball) 4 30mm Now
1333-999
1Gx4 (DDP) HMT42GR7CMR4C-H9 FBGA (78ball) 4 30mm Q2 '11
1066-777 HMT42GR7BMR4C-G7 FBGA (82ball) 4 30mm Now
HMT31GR7BFR4C-PB FBGA (82ball) 2 30mm Now
1600-111111
HMT31GR7CFR4C-PB FBGA (78ball) 2 30mm Q2 '11
512Mx4
HMT31GR7BFR4C-H9 FBGA (82ball) 2 30mm Now
8GB 1Gx72 1333-999
HMT31GR7CFR4C-H9 FBGA (78ball) 2 30mm Q2 '11
HMT31GR7BFR8C-H9 FBGA (82ball) 4 30mm Now
256Mx8 1333-999
HMT31GR7CFR8C-H9 FBGA (78ball) 4 30mm Q2 '11
HMT351R7BFR8C-PB FBGA (82ball) 2 30mm Now
1600-111111
HMT351R7CFR8C-PB FBGA (78ball) 2 30mm Q2 '11
1.5V 256Mx8
HMT351R7BFR8C-H9 FBGA (82ball) 2 30mm Now
1333-999
HMT351R7CFR8C-H9 FBGA (78ball) 2 30mm Q2 '11
HMT351R7BFR4C-PB FBGA (82ball) 1 30mm Now
4GB 512Mx72 1600-111111
HMT351R7CFR4C-PB FBGA (78ball) 1 30mm Q2 '11
512Mx4
HMT351R7BFR4C-H9 FBGA (82ball) 1 30mm Now
1333-999
HMT351R7CFR4C-H9 FBGA (78ball) 1 30mm Q2 '11
128Mx8 1333-999 HMT151R7TFR8C-H9 FBGA (78ball) 4 30mm Now
256Mx4 1333-999 HMT151R7TFR4C-H9 FBGA (78ball) 2 30mm Now
HMT325R7BFR8C-PB FBGA (82ball) 1 30mm Now
1600-111111
HMT325R7CFR8C-PB FBGA (78ball) 1 30mm Q2 '11
256Mx8
HMT325R7BFR8C-H9 FBGA (82ball) 1 30mm Now
2GB 256Mx72 1333-999
HMT325R7CFR8C-H9 FBGA (78ball) 1 30mm Q2 '11
256Mx4 1333-999 HMT125R7TFR4C-H9 FBGA (78ball) 1 30mm Now
128Mx8 1333-999 HMT125R7TFR8C-H9 FBGA (78ball) 2 30mm Now
1GB 128Mx72 128Mx8 1333-999 HMT112R7TFR8C-H9 FBGA (78ball) 1 30mm Now
1333-999 HMT84GR7MMR4A-H9 FBGA (78ball) 4 30mm Q3 '11
32GB 4Gx72 2Gx4 (DDP)
1066-777 HMT84GR7MMR4A-G7 FBGA (78ball) 4 30mm Q3 '11
1Gx4 1333-999 HMT42GR7MFR4A-H9 FBGA (78ball) 2 30mm Q2 '11
HMT42GR7BMR4A-H9 FBGA (82ball) 4 30mm Now
16GB 2Gx72 1333-999
1Gx4 (DDP) HMT42GR7CMR4A-H9 FBGA (78ball) 4 30mm Q2 '11
1066-777 HMT42GR7BMR4A-G7 FBGA (82ball) 4 30mm Now
HMT31GR7BFR4A-H9 FBGA (82ball) 2 30mm Now
512Mx4 1333-999
HMT31GR7CFR4A-H9 FBGA (78ball) 2 30mm Q2 '11
8GB 1Gx72
HMT31GR7BFR8A-H9 FBGA (82ball) 4 30mm Now
256Mx8 1333-999
HMT31GR7CFR8A-H9 FBGA (78ball) 4 30mm Q2 '11
1.35V
HMT351R7BFR8A-H9 FBGA (82ball) 2 30mm Now
512Mx4 1333-999
HMT351R7CFR8A-H9 FBGA (78ball) 2 30mm Q2 '11
4GB 512Mx72 HMT351R7BFR8A-H9 FBGA (82ball) 2 30mm Now
256Mx8 1333-999
HMT351R7CFR8A-H9 FBGA (78ball) 2 30mm Q2 '11
256Mx4 1333-999 HMT151R7TFR4A-H9 FBGA (78ball) 2 30mm Now
HMT325R7BFR8A-H9 FBGA (82ball) 1 30mm Now
256Mx8 1333-999
HMT325R7CFR8A-H9 FBGA (78ball) 1 30mm Q2 '11
2GB 256Mx72
256Mx4 1333-999 HMT125R7TFR4A-H9 FBGA (78ball) 1 30mm Now
128Mx8 1333-999 HMT125R7TFR8A-H9 FBGA (78ball) 2 30mm Now
1GB 128Mx72 128Mx8 1333-999 HMT112R7TFR8A-H9 FBGA (78ball) 1 30mm Now

| The information in this product brochure is subject to change. Up to date information on our products and technologies may be obtained from our website. [Link] |

06
 Product Line-up

DDR3 SDRAM MODULE (240pin-VLP RDIMM)

MODULE
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
1600-111111 HMT82GV7MMR4C-PB FBGA (78ball) 2 18.75mm Q3 '11
16GB 2Gx72 2Gx4 (DDP)
1333-999 HMT82GV7MMR4C-H9 FBGA (78ball) 2 18.75mm Q3 '11
HMT41GV7BMR4C-PB FBGA (82ball) 2 18.75mm Now
1600-111111
HMT41GV7CMR4C-PB FBGA (78ball) 2 18.75mm Q2 '11
1Gx4 (DDP)
HMT41GV7BMR4C-H9 FBGA (82ball) 2 18.75mm Now
1333-999
8GB 1Gx72 HMT41GV7CMR4C-H9 FBGA (78ball) 2 18.75mm Q2 '11
HMT41GV7BMR8C-H9 FBGA (82ball) 4 18.75mm Now
1333-999
512Mx8 (DDP) HMT41GV7CMR8C-H9 FBGA (78ball) 4 18.75mm Q2 '11
1066-777 HMT41GV7BMR8C-G7 FBGA (82ball) 4 18.75mm Now
HMT351V7BFR4C-PB FBGA (82ball) 1 18.75mm Now
1600-111111
HMT351V7CFR4C-PB FBGA (78ball) 1 18.75mm Q2 '11
512Mx4
HMT351V7BFR4C-H9 FBGA (82ball) 1 18.75mm Now
1333-999
1.5V HMT351V7CFR4C-H9 FBGA (78ball) 1 18.75mm Q2 '11
4GB 512Mx72 512Mx4 (DDP) 1333-999 HMT351V7TMR4C-H9 FBGA (78ball) 2 18.75mm Now
HMT351V7BFR8C-PB FBGA (82ball) 2 18.75mm Now
1600-111111
HMT351V7CFR8C-PB FBGA (78ball) 2 18.75mm Q2 '11
256Mx8
HMT351V7BFR8C-H9 FBGA (82ball) 2 18.75mm Now
1333-999
HMT351V7CFR8C-H9 FBGA (78ball) 2 18.75mm Q2 '11
256Mx4 1333-999 HMT125V7TFR4C-H9 FBGA (78ball) 1 18.75mm Now
128Mx8 1333-999 HMT125V7TFR8C-H9 FBGA (78ball) 2 18.75mm Now
HMT325V7BFR8C-PB FBGA (82ball) 1 18.75mm Now
2GB 256Mx72 1600-111111
HMT325V7CFR8C-PB FBGA (78ball) 1 18.75mm Q2 '11
256Mx8
HMT325V7BFR8C-H9 FBGA (82ball) 1 18.75mm Now
1333-999
HMT325V7CFR8C-H9 FBGA (78ball) 1 18.75mm Q2 '11
1GB 128Mx72 128Mx8 1333-999 HMT112V7TFR8C-H9 FBGA (78ball) 1 18.75mm Now
1333-999 HMT82GV7MMR4A-H9 FBGA (78ball) 2 18.75mm Q3 '11
16GB 2Gx72 2Gx4 (DDP)
1066-777 HMT82GV7MMR4A-G7 FBGA (78ball) 2 18.75mm Q3 '11
HMT41GV7BMR4A-H9 FBGA (82ball) 2 18.75mm Now
1333-999
1Gx4 (DDP) HMT41GV7CMR4A-H9 FBGA (78ball) 2 18.75mm Q2 '11
1066-777 HMT41GV7BMR4A-G7 FBGA (82ball) 2 18.75mm Now
8GB 1Gx72
HMT41GV7BMR8A-H9 FBGA (82ball) 4 18.75mm Now
1333-999
512Mx8 (DDP) HMT41GV7CMR8A-H9 FBGA (78ball) 4 18.75mm Q2 '11
1066-777 HMT41GV7BMR8A-G7 FBGA (82ball) 4 18.75mm Now
HMT351V7BFR4C-H9 FBGA (82ball) 1 18.75mm Now
1.35V 512Mx4 1333-999
HMT351V7CFR4C-H9 FBGA (78ball) 1 18.75mm Q2 '11
4GB 512Mx72 512Mx4 (DDP) 1333-999 HMT351V7TMR4A-H9 FBGA (78ball) 2 18.75mm Now
1333-999 HMT351V7BFR8A-H9 FBGA (82ball) 2 18.75mm Now
256Mx8
1333-999 HMT351V7CFR8A-H9 FBGA (78ball) 2 18.75mm Q2 '11
256Mx4 1333-999 HMT125V7TFR4A-H9 FBGA (78ball) 1 18.75mm Now
128Mx8 1333-999 HMT125V7TFR8A-H9 FBGA (78ball) 2 18.75mm Now
2GB 256Mx72
HMT325V7BFR8A-H9 FBGA (82ball) 1 18.75mm Now
256Mx8 1333-999
HMT325V7CFR8A-H9 FBGA (78ball) 1 18.75mm Q2 '11
1GB 128Mx72 128Mx8 1333-999 HMT112V7TFR8A-H9 FBGA (78ball) 1 18.75mm Now

DDR3 SDRAM MODULE (204pin-SODIMM)

MODULE
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
1600-111111 HMT41GS6MFR8C-PB FBGA (78ball) 2 30mm Q2 '11
8GB 1Gx64 512Mx8
1333-999 HMT41GS6MFR8C-H9 FBGA (78ball) 2 30mm Q2 '11
HMT351S6BFR8C-PB FBGA (82ball) 2 30mm Now
1600-111111
HMT351S6CFR8C-PB FBGA (89ball) 2 30mm Now
4GB 512Mx64 256Mx8
HMT351S6BFR8C-H9 FBGA (82ball) 2 30mm Now
1333-999
HMT351S6CFR8C-H9 FBGA (78ball) 2 30mm Now
HMT125S6BFR8C-H9 FBGA (78ball) 2 30mm Now
128Mx8 1333-999
HMT125S6TFR8C-H9 FBGA (78ball) 2 30mm Now
1.5V
HMT325S6BFR8C-PB FBGA (82ball) 1 30mm Now
1600-111111
2GB 256Mx64 HMT325S6CFR8C-PB FBGA (78ball) 1 30mm Now
256Mx8
HMT325S6BFR8C-H9 FBGA (82ball) 1 30mm Now
1333-999
HMT325S6CFR8C-H9 FBGA (78ball) 1 30mm Now
128Mx16 1333-999 HMT325S6BFR6C-H9 FBGA (96ball) 2 30mm Now
128Mx64 128Mx8 1333-999 HMT112S6TFR8C-H9 FBGA (78ball) 1 30mm Now
1GB 64Mx16 1333-999 HMT112S6BFR6C-H9 FBGA (96ball) 2 30mm Now
128Mx64
128Mx16 1333-999 HMT312S6BFR6C-H9 FBGA (96ball) 1 30mm Now

DDR3 SDRAM MODULE (240pin-LRDIMM)

MODULE
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
1600-111111 HMT84GL7MMR4C-PB FBGA (78ball) 4 30.35mm Q3 '11
32GB 4Gx72 2Gx4 (DDP)
1333-999 HMT84GL7MMR4C-H9 FBGA (78ball) 4 30.35mm Q3 '11
1.5V
1600-111111 HMT42GL7BMR4C-PB FBGA (82ball) 4 30.35mm Q2 '11
16GB 2Gx72 1Gx4 (DDP)
1333-999 HMT42GL7BMR4C-H9 FBGA (82ball) 4 30.35mm Q2 '11
32GB 4Gx72 2Gx4 (DDP) 1333-999 HMT84GL7MMR4A-H9 FBGA (78ball) 4 30.35mm Q3 '11
1.35V
16GB 2Gx72 1Gx4 (DDP) 1333-999 HMT42GL7BMR4A-H9 FBGA (78ball) 4 30.35mm Q2 '11

| The information in this product brochure is subject to change. Up to date information on our products and technologies may be obtained from our website. [Link] |

07
 Graphics Memory
High Speed and Density

General Description
Since the world’s first Graphics DDR SDRAM was introduced in 1999, Hynix has played a leadership role in the Graphics memory market by
offering cost effective and high performance products.
Hynix’s newly introduced 40nm class 2Gb GDDR5 offers designers 7Gbps speed (bandwidth of 28GB/sec with 32-bit I/O) required for high end
graphics. In addition to improved speed and higher density, the power consumption on the 2Gb GDDR5 is significantly reduced since it can
operate on 1.35V power supply. This results in an estimated 20% reduction in power consumption compared to the 1.5V variants, meeting
Hynix’s goal of developing eco-friendly products.
The 2Gb GDDR5 will meet the needs of high-end desktop and notebook graphics applications. It will also be suitable in super computers de-
signed with a General Purpose GPU architecture, where the 2Gb GDDR5 will serve as high bandwidth memory to the GPU.
Hynix has maintained its leadership in graphics memory with the world’s first 60nm class 1Gb GDDR5 in 2007, followed by the 50nm class 1Gb
GDDR5 in 2008, and 40nm class 2Gb GDDR5 in early 2010.
Hynix also supports GDDR3, DDR3 and DDR2 products for performance and mainstream market. Hynix will continue to provide value to cus-
tomers with leadership products with high performance and quality.

40nm class 2Gb GDDR5 Features Graphics Applications

Items Features
Op. Frequency Max 7.0Gbps
Power Supply VDD(Q) = 1.5V & 1.35V
I/O x32 / x16 PC Graphics Game Console
Package 170ball FBGA (12mmx14mm)
Banks / Prefetch 16Banks / 8bit
Interface POD_15

HPC / Server Consumer

Graphics Product Features Comparison

Items DDR2 DDR3 GDDR3 GDDR5
VDD(Q) 1.8V 1.5V 1.8V 1.35V / 1.5V
Speed Max 600MHz Max 1.0GHz Max 1.3GHz Max 7.0Gbps
Burst length 4/8 4/8 4/8 8 only
Package 84ball FBGA 96ball FBGA 136ball FBGA 170ball FBGA
Density 512Mb / 1Gb 1Gb / 2Gb 512Mb / 1Gb 1Gb / 2Gb
I/O x16 x16 x32 x32 / x16
Banks 4(512Mb) / 8(1Gb) 8 8 16
BST
× × ○ ○
(Boundary Scan Test)

08
 Product Line-up

DDR3 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

1,000MHz (1.0ns) H5TQ2G63BFR-N0C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

2Gb 128Mx16 900MHz (1.1ns) H5TQ2G63BFR-11C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
800MHz (1.2ns) H5TQ2G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
1,000MHz (1.0ns) H5TQ1G63DFR-N0C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
900MHz (1.1ns) H5TQ1G63DFR-11C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
1Gb 64Mx16 800MHz (1.2ns) H5TQ1G63DFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
800MHz (1.2ns) H5TQ1G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
700MHz (1.4ns) H5TQ1G63BFR-14C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

GDDR3 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

1,300MHz (0.77ns) H5RS1H23MFR-N3C FBGA (136ball) 8bank, 1.9V / 1.9V Now

1,200MHz (0.8ns) H5RS1H23MFR-N2C FBGA (136ball) 8bank, 1.9V / 1.9V Now
1Gb 32Mx32 1,000MHz (1.0ns) H5RS1H23MFR-N0C FBGA (136ball) 8bank, 1.8V / 1.8V Now
900MHz (1.1ns) H5RS1H23MFR-11C FBGA (136ball) 8bank, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS1H23MFR-14C FBGA (136ball) 8bank, 1.8V / 1.8V Now
1,300MHz (0.77ns) H5RS5223DFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,200MHz (0.8ns) H5RS5223DFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,000MHz (1.0ns) H5RS5223DFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
512Mb 16Mx32
900MHz (1.1ns) H5RS5223DFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS5223DFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
500MHz (2.0ns) H5RS5223DFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

GDDR5 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

6.0Gbps 16Bank, 1.5V / 1.5V

H5GQ2H24MFR-R0C FBGA (170ball) Now
4.0Gbps 16Bank, 1.35V / 1.35V
2Gb 64Mx32 5.0Gbps 16Bank, 1.5V / 1.5V
H5GQ2H24MFR-T2C FBGA (170ball) Now
3.6Gbps 16Bank, 1.35V / 1.35V
4.0Gbps H5GQ2H24MFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
6.0Gbps 16Bank, 1.5V / 1.5V
H5GQ1H24BFR-R0C FBGA (170ball) Now
4.0Gbps 16Bank, 1.35V / 1.35V
5.0Gbps 16Bank, 1.5V / 1.5V
H5GQ1H24BFR-T2C FBGA (170ball) Now
3.6Gbps 16Bank, 1.35V / 1.35V
4.0Gbps H5GQ1H24BFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
1Gb 32Mx32
6.0Gbps H5GQ1H24AFR-R0C FBGA (170ball) 16Bank, 1.6V / 1.6V Now
5.0Gbps 16Bank, 1.5V / 1.5V
H5GQ1H24AFR-T2L FBGA (170ball) Now
3.2Gbps 16Bank, 1.35V / 1.35V
5.0Gbps H5GQ1H24AFR-T2C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
4.0Gbps H5GQ1H24AFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now

| The information in this product brochure is subject to change. Up to date information on our products and technologies may be obtained from our website. [Link] |

09
 Consumer & Network Memory
New and Diverse

General Description
We now live in the Digital Era. Digital televisions, DVD and Set-Top Box give us rich entertainment, while car navigation systems provide comfort
and convenience. All of these digital consumer appliances need semiconductor memory for performance improvement, power savings and
size reduction. Hynix has full line-up of DRAM (Dynamic RAM) to meet the needs of a wide range of consumer applications. Hynix offers a family of
SDRAM (Synchronous DRAM) in 128Mb~512Mb densities, packaged in TSOP-II and FBGA offered at industrial temperature range of -40℃ to
85℃ and featuring very low power consumption. DDR, DDR2 and DDR3 SDRAMs are available for high-end consumer applications requiring
higher data transfer rates. In many applications, such as Digital Television and Set-Top-Box, SDR SDRAM has been replaced by DDR, DDR2
and DDR3 SDRAM technologies. Sometimes, the most important things are not be visible. Although hidden from view, Hynix Consumer
memories have been used in a variety of applications offered by a number of companies to realize a multitude of miracles.

Consumer Solutions Consumer DRAM Usage Map

Major products as of now Products with increasing demand Future demand
HDD DVD Bluray NTW STB DTV PRT DSC CNS
64M
SDR 128M
256M
64M
128M
DDR1
256M
Printer
512M
256M
DDR2 512M
1G
1G
DDR3 2G
4G
HDD : Hard Disk Drive NTW : Network STB : Set Top Box PMP : Potable Media Player
DTV : Digital TV PRT : Printer DSLR : Digital Single Lens Reflex DVD : Digital Video Disc
| DRAM Solutions for Optimized Consumer Applications | CNS : Car Navigation DPF : Digital Photo Frame B/R : Blue-ray Player

Network Memory
Hynix is offering a family of network-centric memory products that meet the
special requirements of telecommunications and network switching appli-
Internet
cations. DRAM components offered include SDRAM, DDR, DDR2 and DDR3
in a wide range of densities, configurations and modular form factors. Hynix
offers Extended Temperature and Industrial Temperature ranges and high DSL / Cable
speed to ensure optimum performance in extreme environments. Modem

Router

Computer A Computer B Notebook C

10
 Product Line-up

SDR SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE AVAILABILITY
x16 H57V1262GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 TSOP 3.3V Now
128Mb x16 H57V1262GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 (℃) FBGA 3.3V Now
x8 H57V2582GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 (℃) TSOP 3.3V Now
x16 H57V2562GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 (℃) TSOP 3.3V Now
256Mb x16 H57V2562GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 (℃) FBGA 3.3V Now
x32 H57V2622GMR 60 / 70 / 75 Normal / Low 0~70 / -40~85 (℃) FBGA 3.3V Now

DDR SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE AVAILABILITY
128Mb x16 H5DU1262GTR FA / FB / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 (℃) TSOP 2.5V Now
x8 H5DU2582GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 (℃) TSOP 2.5V Now
256Mb x16 H5DU2562GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 (℃) TSOP 2.5V Now
x16 H5DU2562GFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 (℃) FBGA 2.5V Now
x8 H5DU5182ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 (℃) TSOP 2.5V Now
x8 H5DU5182EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 (℃) FBGA 2.5V Now
512Mb
x16 H5DU5162ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 (℃) TSOP 2.5V Now
x16 H5DU5162EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 (℃) FBGA 2.5V Now

DDR2 SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE AVAILABILITY
256Mb x16 H5PS2562GFR E3 / C4 / Y4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Now
x8 H5PS5182GFR E3 / C4 / Y4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Now
512Mb H5PS5162FFR E3 / C4 / Y4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Now
x16
H5PS5162GFR E3 / C4 / Y4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Now
x8 HY5PS1G831CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Now
x8 H5PS1G83EFR E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Now
x8 H5PS1G83JFR E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Q3' 11
1Gb x16 H5PS1G63JFR E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Q3' 11
x16 HY5PS1G1631CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Now
x16 H5PS1G63EFR E3 / C4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Now
x32 H5PS1GC2FMR E3 / C4 / Y5 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.8V Now

DDR3 SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE AVAILABILITY
H5TQ1G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.5V Now
x8
H5TQ1G83DFR S6 / G7 / H9 / PA / PB / RD Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.5V Now
1Gb
H5TQ1G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.5V Now
x16
H5TQ1G63DFR S6 / G7 / H9 / PA / PB / RD Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.5V Now
x8 H5TQ2G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.5V Now
2Gb x16 H5TQ2G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.5V Now
x32 H5TQ2GC3DMR S5 / S6 / G7 / G8 / H9 Normal / Low 0~95 / -40~95 (℃) Note FBGA 1.5V Now

| The information in this product brochure is subject to change. Up to date information on |Note : At tOPER 85~95 ℃, Double refresh rate is required. |
| our products and technologies may be obtained from our website. [Link]

11
 Mobile Memory
Smart and Mobile

General Description
Hynix Mobile Memory technology unleashes the best mobile experience on the go. As mobile devices get smaller, sleeker, and lighter than
ever, consumers will be able to choose from a wide range of mobile devices to keep them connected, entertained, informed, and productive.
As consumer life styles become more mobile, there is ever increasing demand for connectivity. Mobile devices will require high performance
memories, with very low power consumption for extended battery life. Devices that use Hynix Mobile Memory enables everything you love on-
the-go. Hynix Mobile Memory products offered in small footprint packages have superior power saving features useful in all handheld devices
such as cellular phones, Tablet PCs, PDAs, MP3 players, etc. Hynix Mobile Memories are ideal for portable applications which require very
low power consumption. Hynix’s Mobile Business Group offers a broad variety of products enabling our customers to deliver next-generation
devices in time to market

Mobile DRAM
| Broad Product Line : LPSDR / LPDDR, x16 / x32 organizations, 256Mb~2Gb densities LPDDR2, x32 organization, 1Gb/2Gb density
| Diverse Packaging Options : Discrete, KGD (Known Good Die), MCP (Multi Chip Package), PoP (Package on Package)
| Small Form Factor Packages : For use in the most space-constrained handheld applications
| Low Power Features : Programmable Drive strength, Partial Array Self Refresh, Temperature Compensated Self Refresh
| Major Applications : Mobile Phone, Tablets PCs, PDA, MP3 Player, Digital Still Camera, MID (Mobile Internet Device),
PND (Portable Navigation Device), Personal Media Player (PMP), Handheld Game Console, e-book
| LPDDR2 will be the next generation mainstream. Hynix set the standard for LPDDR2 technology along with LPDDR

[ Bandwidth Comparison ] ( Source : Hynix Marketing ) [ Transition to LPDDR2 ] ( Source : Hynix Marketing )

PRODUCT VOLTAGE BIT RATE BANDWITH ( Unit : M, 1G Eq ) 80%

78%
63%
LPDDR1 1.8V 400Mbps 1.6Gbps 44%
LPDDR1
LPDDR2
LPDDR2 1.2V 800Mbps 3.2Gbps 0% 1%

2009 2010 2011 2012 2013 2014

MCP
| Small Form Factor package saves space in Handheld Devices
| High Capacity Data Storage and High Speed with Low Power Consumption
| In-house manufacturing provides cost efficient solutions in a timely manner
| Major Application - Mobile Phone, Smartphone, Tablet PCs, PDA Phone,
Digital Still Camera, MID (Mobile Internet Device), Wireless LAN
Card, Handheld Game Console, Netbook

[ MCPs in Mobile Application ] [ MCPs in Mobile Applications ]

MCP = NAND (SLC) + Mobile DRAM
8Gb
SLC NAND
(Code Memory)
Code / Storage Data Execution

PoP = NAND (SLC) + Mobile DRAM

SLC NAND
can be removed
Tablet PC /MID
(PKG on PKG) Code / Storage Data Execution
> DRAMPoP 4Gb

> Page Size : LB (2K) / SB (512) Smart Phone

NAND (SLC) 512 / 1Gb / 2Gb / 4Gb / 8Gb(DDP) > Vol : 1.8V / 2.7V 3.3V 2Gb
I/O : ×16 / ×8
Feature Phone
>

+
SDR / DDR 1Gb
Mobile DRAM 128M / 256Mb / 512Mb / 1Gb / 2Gb / 4Gb (DDP)
>

> I/O : ×16 / ×32 Data Card Compact DSC

512Mb
8×9 (130ball) / 10.5×13 (107/137ball) / 10×14(149ball) > SDR / DDR
PKG & Ball Out Mobile DRAM
14×14 (152ball) / 15×15 (160ball) / 12×12(168ball) > I/O : ×16 / ×32 (Buffer Memory)

256Mb 512Mb 1Gb 2Gb 4Gb

12
 Product Line-up

Mobile SDR
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
128M x 16 166MHz H55S2G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
2Gb 64M x 32 166MHz H55S2G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
64M x 32 166MHz H55S2G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S1G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
64M x 16
166MHz H55S1G62AFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
166MHz H55S1G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
1Gb 32M x 32
166MHz H55S1G22AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 166MHz H55S1G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) 166MHz H55S1G32AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8 V Now
166MHz H55S5162DFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
32M x 16
166MHz H55S5162EFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
512Mb
166MHz H55S5122DFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
16M x 32
166MHz H55S5122EFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
16M x 16 166MHz H55S2562JFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
256Mb
8M x 32 166MHz H55S2622JFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
All SDRAM is Available For Lead Free or Lead & Halogen Free
Mobile DDR
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
DDR400 H5MS2G62MFR-EBM FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS2G62MFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
128M x 16
DDR400 H5MS2G62AFR-EBM FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS2G62AFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS2G22MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS2G22MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
2Gb 64M x 32
DDR400 H5MS2G22AFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS2G22AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS2G32MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now
64M x 32 DDR333 H5MS2G32MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) DDR400 H5MS2G32AFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS2G32AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G62MFP-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G62MFP-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G62AFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
64M x 16
DDR333 H5MS1G62AFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G62BFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G62BFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G22MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G22MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G22AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
1Gb 32M x 32
DDR333 H5MS1G22AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G22BFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G22BFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G32MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G32MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 DDR400 H5MS1G32AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) DDR333 H5MS1G32AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS1G32BFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS1G32BFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS5162DFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS5162DFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
32M x 16
DDR400 H5MS5162EFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS5162EFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
512Mb
DDR400 H5MS5122DFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS5122DFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
16M x 32
DDR400 H5MS5122EFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR333 H5MS5122EFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
DDR400 H5MS2562JFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
16M x 16
DDR333 H5MS2562JFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
256Mb
DDR400 H5MS2622JFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
8M x 32
DDR333 H5MS2622JFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
All SDRAM is Available For Lead Free or Lead & Halogen Free
LPDDR2
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
DDR2-800 H9TKNNN2GDMPLR-NDM FBGA (168ball) 8Bank, 1.8V / 1.2V / 1.2V Now
2Gb 64Mx32
DDR2-667 H9TKNNN2GDMPLR-NYM FBGA (168ball) 8Bank, 1.8V / 1.2V / 1.2V Now
DDR2-800 H9TKNNN1GDAPLR-NDM FBGA (168ball) 8Bank, 1.8V / 1.2V / 1.2V Now
1Gb 32M x32
DDR2-667 H9TKNNN1GDAPLR-NYM FBGA (168ball) 8Bank, 1.8V / 1.2V / 1.2V Now
| The information in this product brochure is subject to change. Up to date information on our products and technologies may be obtained from our website. [Link] |

13
 NAND Flash
High Density in Small Packages

General Description
Hynix provides a broad range of NAND Flash products density from 128Mb to 256Gb with various types of packaging (TSOP, VLGA and FBGA).
Due to the proliferation of digital content, NAND Flash memory products are used in a wide variety of applications such as MP3, PMP, Digital
camera, Camcorder, Memory card, USB flash drive and other consumer electronics such as game console, Navigation. Currently, Hynix
NAND Flash Memory is being widely adopted in mobile handsets and Tablet PCs. Hynix is also developing NAND based storage solutions for
PCs and Servers. To meet the growing demand for high capacity and improved performance in mobile applications, Hynix is offering HiFFS
(Flash File System) software with eHiFFS system that enhances NAND chip performance and reliability.

NAND Flash Key Features

Items 40nm class 32G MLC 30nm class 32G MLC 20nm class 64G MLC
Voltage 3.3V 3.3V 3.3V
Organization x8 x8 x8
Page & Block size (P/B) 4KB+224B / 512KB 8KB+448B / 2MB 8KB+448B / 2MB
tRC(min) / tWC (min) 25ns 25ns 20ns
tR (max) 60us 200us 200us
Program time (typ.) 1000us 1600us 1700us
Erase time (typ.) 3ms 2.5ms 3.5ms
MONO / DDP 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max)
Operating current
QDP / DSP 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 60mA(max) 30mA(typ.) ~ 60mA(max)
Copyback ○ with Data out ○ with Data out ○ with Data out
Cache Program ○ ○ ○
Function
Cache Read ○ ○ ○
2 Plane Op. Write, Read & Erase Write, Read & Erase Write, Read & Erase
Enhanced Data Out ○ ○ ○
Special / Function OTP ○ ○ ○
Unique ID ○ ○ ○

Endurance / Package
E/W Cycles / Retention 5K / 10 years 3K / 10 years TBD
NOP 1 1 1
Package VLGA VLGA / TSOP VLGA

NAND Flash Applications Hynix NAND Flash

Cell Type SLC MLC TLC

High Performance/ Middle Performance/ Low Performance/

Specification
Low Density Middle Density High Density

Computing Mobile TSOP

TSOP
Consumer Data Storage Package LGA LGA
LGA
FBGA

TSOP 8GB TSOP 16GB

Max Density LGA 32GB
LGA 16GB LGA 32GB

14
 Software Support

HiFFS Software
HiFFS is a flash file system solution for mobile applications. HiFFS is the essential system software for electronic devices which has Flash
memory storage such as mobile phones, PDAs, MP3 players, PMPs, digital TVs, and digital camcorders.

Features
| Flash memory file system solution for mobile embedded system
APPLICATIONS
| Higher performance and reliability
| Fully compatible with FAT 12 / 16 / 32 file system standards
| Journaling error recovery mechanism
OS
| Support various NAND Flash memory types such as small block,
large block, MLC and SLC and TLC. Windows Mobile Linux Win CE

| Efficient bad block management and wear-leveling

| Support UMS(USB Mass Storage) and external flash memory cards
| Higher read / write performance HiFFS Flash File System
| Fast booting
| Support various operating systems such as WinCE, Linux,
Non-OS, Windows Mobile Flash Memory

Hynix SSD & e-NAND

SSD (Solid State Drive)
SSD is one of the fastest growing NAND applications in the world.
Because of its strengths - Speed, Performance, Reliability, and
Power Consumption - many computing devices such as MID, Net
Book, Notebook, Servers, etc have replaced conventional hard
drives with SSD. Hynix offers SSD for mobile and personal computing
devices.

SSD Key Features

Items Features
Bus Interface SATA 3.0Gbps
Capacities 128GB, 256GB, 512GB
Form Factor Standard 2.5"
Dimension 69.9 x 100 x 7mm
Sustained Performance - 128KB, MAX Read 260MB/s / Write 260MB/s
Random Performance - 4KB, MAX Read 30K IOPS / Write 10K IOPS
Power Consumption Active : 0.75W / Stand-by : 0.2W
Temperature Range 0℃ to 70℃ for Operating / -55℃ to 95℃ for Storage
MTBF 2,000,000 Hrs
BER 1 error in 1014 bits transferred

e-NAND
| Combination of NAND Flash and the Flash Controller with MMC interface, in a single package.
| Simple read / write memory using standard MMC 4.3 / 4.4 protocol interface.
| No additional firmware for NAND management required.
| Controller includes NAND software such as FTL, ECC, FAT-16/32.
| Mainly adopted on Smart phone, Tablet PC, eBook. Emerging of Tablet PC application leads e-NAND market growth.

15
 NAND Flash
Product Line-up

NAND Flash SLC COMPONENT

PRODUCT DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
HY27US08281A 128Mb 16KB (512B Page) SDP 3.3V / x8 TSOP / USOP Now
HY27US08561A 256Mb 16KB (512B Page) SDP 3.3V / x8 TSOP / USOP / FBGA Now
HY27US08121B 512Mb 16KB (512B Page) SDP 3.3V / x8 TSOP / USOP / FBGA Now
H27U518S2C 512Mb 16KB (512B Page) SDP 3.3V / x8 TSOP Now
HY27UF081G2A 1Gb 128KB (2KB Page) SDP 3.3V / x8 TSOP / USOP / FBGA Now
HY27SF081G2A 1Gb 128KB (2KB Page) SDP 1.8V / x8 FBGA Now
H27U1G8F2B 1Gb 128KB (2KB Page) SDP 3.3V / x8 TSOP / FBGA Now
H27S1G6F2B 1Gb 128KB (2KB Page) SDP 1.8V / x8 FBGA Now
HY27UF082G2B 2Gb 128KB (2KB Page) SDP 3.3V / x8 TSOP / LGA / FBGA Now
H27U2G8F2C 2Gb 128KB (2KB Page) SDP 3.3V / x8 TSOP Now
HY27UF084G2B 4Gb 128KB (2KB Page) SDP 3.3V / x8 TSOP Now
H27U4G8F2D 4Gb 128KB (2KB Page) SDP 3.3V / x8 TSOP Now
H27QAG8F2ATR 16Gb 512KB (4KB Page) SDP 3.3V / x8 TSOP Now
H27QBG8GDAIR 32Gb 512KB (4KB Page) DDP 3.3V / x8 FBGA Now Vccq 1.8V

NAND Flash MLC COMPONENT

PRODUCT DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
H27U4G8T2B 4Gb 512KB (4KB Page) SDP 3.3V / x8 TSOP Now
H27U8G8T2B 8Gb 512KB (4KB Page) SDP 3.3V / x8 TSOP Now
H27UAG8T2A 16Gb 512KB (4KB Page) SDP 3.3V / x8 TSOP Now
H27UAG8T2B 16Gb 2MB (8KB Page) SDP 3.3V / x8 TSOP Now
H27UBG8T2M 32Gb 512KB (4KB Page) SDP 3.3V / x8 TSOP / LGA Now
H27UBG8T2A 32Gb 2MB (8KB Page) SDP 3.3V / x8 TSOP / LGA Now
H27UBG8T2B 32Gb 2MB (8KB Page) SDP 3.3V / x8 TSOP Now
H27UCG8U5B 64Gb 2MB (8KB Page) DDP 3.3V / x8 TSOP Now
H27UCG8T2M 64Gb 2MB (8KB Page) SDP 3.3V / x8 LGA Now
H27UDG8V5A 128Gb 2MB (8KB Page) QDP 3.3V / x8 TSOP / LGA Now
H27UEG8YEA 256Gb 2MB (8KB Page) ODP 3.3V / x8 LGA Now

e-NAND (eMMC)
BASE COMPONENT
PRODUCT DENSITY VCC/ORG VERSION AVAILABILITY REMARK
DENSITY STACK
H26M3A001MMR 512MB 4Gb (SLC) 1 1.8V / x8 / x4 MMC4.41 Now
H26M21001DAR 2GB 16Gb 1 3.3V / x8 / x4 MMC4.3 Now
H26M21001ECR 2GB 16Gb 1 3.3V / x8 / x4 MMC4.41 Now
H26M32001DAR 4GB 16Gb 2 3.3V / x8 / x4 MMC4.3 Now
H26M31001EFR 4GB 32Gb 1 3.3V / x8 / x4 MMC4.41 Now
H26M31001FPR 4GB 32Gb 1 3.3V / x8 / x4 MMC4.41 2Q ’11
H26M44001CAR 8GB 16Gb 4 3.3V / x8 / x4 MMC4.3 Now
H26M42001EFR 8GB 32Gb 2 3.3V / x8 / x4 MMC4.41 Now
H26M42001FMR 8GB 32Gb 2 3.3V / x8 / x4 MMC4.41 2Q ’11
H26M54001AJR 16GB 32Gb 4 3.3V / x8 / x4 MMC4.3 Now
H26M54001BKR 16GB 32Gb 4 3.3V / x8 / x4 MMC4.41 Now
H26M54001BFR 16GB 32Gb 4 3.3V / x8 / x4 MMC4.41 Now
H26M52002CKR 16GB 64Gb 2 3.3V / x8 / x4 MMC4.41 1Q ’11
H26M68001MNR 32GB 32Gb 8 3.3V / x8 / x4 MMC4.3 Now
H26M68001ANR 32GB 32Gb 8 3.3V / x8 / x4 MMC4.41 Now
H26M64002BNR 32GB 64Gb 4 3.3V / x8 / x4 MMC4.41 1Q ’11
H26M78002ANR 64GB 64Gb 8 3.3V / x8 / x4 MMC4.41 1Q ’11

E2NAND2.0
PRODUCT DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
H2DTDG8VD1MYR 128Gb 2MB(8KB Page) 4 3.3V / X8 VLGA Now VccQ=3.3V
H2DTEG8VD1MYR 256Gb 2MB(8KB Page) 8 3.3V / X8 VLGA Now VccQ=3.3V
H2DTDG8UD1MYR 128Gb 2MB(8KB Page) 2 3.3V / X8 VLGA Now
H2DTEG8VD1MYR 256Gb 2MB(8KB Page) 4 3.3V / X8 VLGA Now
H2DTFG8YD1MYR 512Gb 2MB(8KB Page) 8 3.3V / X8 VLGA Now

| The information in this product brochure is subject to change. Up to date information on our products and technologies may be obtained from our website. [Link] |
16
 CIS
CMOS Image Sensor
High Resolution and Clarity

General Description Applications

CMOS Image Sensor is a device that converts an optical image to an electrical
signal using a CMOS technology. CMOS technology enables integration of
image sensing and digital signal processing on the same chip, resulting in
faster, smaller, less expensive, and lower power image sensing devices.
CMOS Image Sensor market has a high growth potential, with demand expected
| Camera Phone
to rise by more than 15 percent annually through 2014.
| NotePC
Its main applications are camera phones, video conferencing systems for
| Stand alone Web Cam
NotePC and digital still cameras, The market for CMOS Image Sensor is rapidly
| Other Mobile Gadgets
diversifying into applications such as surveillance systems, automotive cameras,
medical equipment and various home appliances such as Smart TV.

Camera attachment ratio on Mobile Phone Resolution Trend for Mobile phone & NotePC

85.0% 86.9%
80.8% 83.1%
78.6%
71.4%
67.4%
64.9%

2007 2008 2009 2010F 2011F 2012F 2013F 2014F 2007 2008 2009 2010F 2011F 2012F 2013F 2014F
( Source : Techno System Research, June 2010 ) <CIF VGA 1.3M 2M 3M 5M 8M >10M

( Source : Techno System Research, June 2010 )

Camera attachment ratio on NotePC

73.4% 73.8% 74.1% 74.2% 74.5%

73.1%
56.9%

38.9%

2007 2008 2009 2010F 2011F 2012F 2013F 2014F

( Source : Techno System Research, June 2010 )

17
 CIS
Product Line-up and Key Features

VGA (YACBA21S)
Optical Format 1/10-inch Sensitivity 1280mV / lux-sec
Pixel Size 2.25um × 2.25um SNR 39dB
Active Array Format 640H × 480V Dynamic Range 60dB
Imaging Area 1.44mm × 1.08mm ADC On-chip, 10-bit
Color Filter Array RGB Bayer color filters Output Format YUV4:2:2 RGB5:6:5 RGB4:4:4
Frame Rate 30-fps @ full resolution Digital I/O 1.7V—3.0V (1.8V / 2.8V)
Shutter Electronic Rolling Shutter Supply Voltage Digital Core
2.7V—3.0V (2.8V) with Single Regulator
Automatic Exposure, Automatic White Balance, Analog & Pixel
Automatic Black Level Calibration, On-Chip Dead Pixel 123mW @ 30fps (Typ.) for Single Power
Power Consumption
Correction, Windowing, Sub-Sampling, X-Y Image Flip, 107mW @ 30fps (Typ.) for dual power
Features
Anti-flicker, Noise Reduction, Edge Enhancement, Operating Temp. -20℃ to 60℃
Brightness, Color Saturation, Gamma Correction, Status Mass Production
Color Correction, Lens shading Correction Packaging ShellUT CSP

VGA (YACBA31S)
Optical Format 1/10-inch Sensitivity
Pixel Size 2.125um × 2.125um SNR TBD
Active Array Format 640H × 480H Dynamic Range
Imaging Area 1.36mm × 1.02mm ADC On-chip, 10-bit
Color Filter Array RGB Bayer color filters Output Format YUV4:2:2 RGB5:6:5 RGB4:4:4
Frame Rate 30-fps @ full resolution Digital I/O 1.7V—3.0V (1.8V / 2.8V)
Shutter Electronic Rolling Shutter Supply Voltage Digital Core
2.7V—3.0V (2.8V) with Single Regulator
Automatic Exposure, Automatic White Balance, Analog & Pixel
Automatic Black Level Calibration, On-Chip Dead Pixel Power Consumption TBD
Correction, Windowing, Sub-Sampling, X-Y Image Flip,
Features
Anti-flicker, Noise Reduction, Edge Enhancement, Operating Temp. -20℃ to 60℃
Brightness, Color Saturation, Gamma Correction, Status Q3’ 11 (MP)
Color Correction, Lens shading Correction Packaging ShellUT CSP

1.0M (YACC611C)
Optical Format 1/5.5-inch Sensitivity
Pixel Size 2.0um × 2.0um SNR TBD
Active Array Format 1280H × 800V Dynamic Range
Imaging Area 2.56mm × 1.6mm ADC On-chip, 10-bit
Color Filter Array RGB Bayer color filters Output Format RAW 8bit, 10bit
Frame Rate 30fps @ 720P Digital I/O 1.7V—3.0V (1.8V / 2.8V)
Shutter Electronic Rolling Shutter Supply Voltage Digital Core 1.7V—1.9V (1.8V)
Analog & Pixel 2.7V—3.0V (2.8V)

Exposure Control, White Balance, BLC, DPC, Power Consumption TBD

Features LSC, Windowing, Sub-sampling, X-Y Flip
(Sensor Only) Operating Temp. -20℃ to 60℃
Status Q2’ 11 (MP)
Packaging ShellUT CSP

2M (YACD511S)
Optical Format 1/5-inch Sensitivity 700mV / lux-sec
Pixel Size 1.75um × 1.75um SNR 38dB
Active Array Format 1600H × 1200V Dynamic Range 60dB
Imaging Area 2.80mm × 2.10mm ADC On-chip, 10-bit
Color Filter Array RGB Bayer color filters Output Format YUV4:2:2 RGB5:6:5 ITU656-like
Frame Rate 15-fps @ full resolution Digital I/O 1.7V—3.0V
Shutter Electronic Rolling Shutter Supply Voltage Digital Core 1.7V—1.9V
Automatic Exposure, Automatic White Balance, Analog & Pixel 2.7V—3.0V
Automatic Black Level Calibration, On-Chip Dead Pixel Power Consumption TBD
Correction, Edge Data for Auto Focus, Motion Data for
Features
Anti-Shaking, Windowing, Sub-Sampling, Image Scaling, Operating Temp. -20℃ to 60℃
X-Y Image Flip, Anti-flicker, Noise Reduction, Status Mass Production
Edeg Enhancement Packaging ShellUT CSP

3M (YACE5A1S)
Optical Format 1/5-inch Sensitivity
Pixel Size 1.4um × 1.4um SNR TBD
Active Array Format 2048H × 1536V Dynamic Range
Imaging Area 2.87mm × 2.15mm ADC On-chip, 10-bit
Color Filter Array RGB Bayer color filters YUV422, RGB565, RGB666, ITU656-like,
Frame Rate 15-fps @ full resolution Output Format
Bayer 8bit/10bit, JPEG compressed data
Shutter Electronic Rolling Shutter Digital I/O 1.7V—3.0V
Supply Voltage Digital Core 1.2V
MCU Embedded, JPEG Encoder, Automatic Exposure, Analog & Pixel 2.7V—3.0V
Automatic White Balance, Auto Flicker Cancellation,
Automatic Focus Data, Anti Shaking Function, Automatic Power Consumption TBD
Features
Black Level Calibration, Image Scaling, Dead Pixel
Cancealment, Edge Enhancement, Bright Control, Contrast Operating Temp. -20℃ to 60℃
Control, False Color Reduction, Image X-Y Flip, OTP Status Q2’ 11 (MP)
Packaging Bare die (COB) / Recon. Wafer
18
Global Sales Network

HEADQUARTERS & FACTORY EUROPE ASIA PACIFIC

HYNIX SEMICONDUCTOR INC. (H.S.I) HYNIX SEMICONDUCTOR DEUTSCHLAND GMBH. (H.S.D) HYNIX SEMICONDUCTOR CHINA LTD. (H.S.C.L)
HEADQUARTERS & FACTORY Am Prime Parc 13 Kelsterbacher Str.16 D-65479 Lot K7, Wuxi Export Processing Zone in Wuxi New
San 136-1, Ami-Ri, Bubal-Eub, Icheon-si, Raunheim Germany District, Wuxi, Jiangsu Province, China
Kyoungki-Do, 467-701, Korea Tel: 49-6142-921-100 / 205 Tel: 86-510-8520-8888
Tel: 82-31-630-4114 Fax: 82-31-630-4103 Fax: 49-6142-921-290 / 214 Fax: 86-510-8520-8298
MARKETING & SALES DIVISION MILANO OFFICE
891 Daechi-dong, Kangnam-gu, Seoul, Via Alessandro Volta 18, 20094 Corsico, Milano, Italy HYNIX SEMICONDUCTOR ASIA PTE. LTD. (H.S.S)
135-738, Korea Tel: 39-2-4862-0502 Fax: 39-2-4586-4733 7 Temasek Boulevard #42-02, Suntec City Tower 1,
Tel: 82-2-3459-5114 Fax: 82-2-3459-5987/8 Singapore 038987
MOSCOW OFFICE
Tel: 65-6338-5966 Fax: 65-6336-5911 / 5922
CHEONGJU FACTORY 123242, Moscow, Krasnaya Presnya str., 13, 5th fl,
1, Hyangjeong-dong, Hungduk-gu, Cheongju-si, room 33, Russia PENANG OFFICE
Chungbuk, 361-725, Korea Tel: 7-495-104-52-84 Fax: 7-495-104-52-84 Unit 17 lower level 5, Hotel Equatorial Penang 1 Jalan
Tel: 82-43-280-3114 Fax: 82-43-280-2145 Bukit Jambul Bayan Lepas 11900 Penang, Malaysia
PARIS OFFICE
Tel: 60-04-643-2428 Fax: 60-04-643-2432
Bureaux de Sevres-2 rue Troyon 92316 SEVRES Cedex,
AMERICA Paris, France
HYNIX SEMICONDUCTOR INDIAN SUBCONTINENT PVT LTD. (H.S.I.S)
HYNIX SEMICONDUCTOR AMERICA INC. (H.S.A) Tel: 33-141-14-83-42 Fax: 33-141-14-83-40
Unit 10, Level 8, Innovator Building, ITPB(International
3101 North First Street, San Jose, CA 95134, U.S.A STOCKHOLM OFFICE Technology Park Bangalore), Whitefield Road,
Tel: 1-408-232-8000 Fax: 1-408-232-8103 Flygfaltsgaten 1, SE-12830 Skarpnack Bangalore, 560066, India
ATLANTA OFFICE Stockholm, Sweden Tel: 91-80-4126-5271~2 Fax: 91-80-4126-5274
907 Santa Anita Drive Woodstock, GA 30189, U.S.A Tel: 46-8-605-7290 Fax: 46-8-605-2640
Tel: 1-678-445-7768 Fax: 1-678-445-8120 HELSINKI OFFICE HYNIX SEMICONDUCTOR HONG KONG LTD. (H.S.H)
AUSTIN OFFICE Technopolis, Innopoli 2, Tekniikkatie 14, 02150, Espoo, Suite 2401, 24F., Central Plaza, 18 Harbour Road
4201 West Parmer Lane Bldg. B, Suite 280 Austin, Finland Wanchai, Hong Kong
TX 78727, U.S.A Tel: 358-46-712-1081 Fax: 358-46-712-1080 Tel: 852-2971-1600 Fax: 852-2971-1622
Tel: 1-512-339-8166 Fax: 1-512-821-3730
HYNIX SEMICONDUCTOR U.K. LTD. (H.S.U) HYNIX SEMICONDUCTOR TAIWAN INC. (H.S.T)
CHICAGO OFFICE
243 Brooklands Road, Weybridge, Surrey KT13 0RH, U.K Lite-On Technology Building 11F, No. 392,
1920 North Thoreau Drive Suite 170 Schaumburg,
Tel: 44-1932-827-700 Fax: 44-1932-827-745~7 Ruey Kuang Road, Neihu, Taipei 11492 Taiwan, R.O.C
IL 60173, U.S.A
LIMERICK OFFICE Tel: 886-2-8752-2300 Fax: 886-2-8752-8368
Tel: 1-847-925-0190 Fax: 1-847-925-0196
3rd Floor, lvernia Hall, 97 Henry Street Limerick, Ireland
DALLAS OFFICE HYNIX SEMICONDUCTOR (Shanghai) CO., LTD. (H.S.C.S)
Tel: 353-61-400-755 Fax: 353-61-400-757
1701 Gateway Blvd, Suite 357 Richardson, Room 2702-2705, Maxdo Center, No.8, Xing Yi RD,
TX 75080, U.S.A STIRLING OFFICE
Changning Zone, Shanghai, China
Tel: 1-972-690-4969 Fax: 1-972-690-1065 Office 2/1 Springfield House Laurel Hill Business Park
Tel: 86-21-5208-0505 Fax: 86-21-5208-0802
Laurel Hill Stirling, FK 7 9JQ, Scotland, U.K
DENVER OFFICE BEIJING OFFICE
Tel: 44-1932-827-750 Fax: 44-1932-827-759
2308 Hearth Drive #28 Evergreen CO 80439, U.S.A Room1401 Landmark Building, 8 North Dongsanhuan
Tel: 1-303-679-3515
JAPAN Road, Chaoyang District, Beijing 100004, China
GLENDALE OFFICE Tel: 86-10-6590-6546 Fax: 86-10-6590-0908
500 N. Central Avenue, Suite 810 Glendale, CA 91203, HYNIX SEMICONDUCTOR JAPAN INC. (H.S.J)
SHENZHEN OFFICE
U.S.A 23F SHIROYAMA TRUST TOWER, 4-3-1 Toranomon,
Room1906-1909, Fu Chun Dong Fang Building
Tel: 1-818-242-7420 Fax: 1-818-242-7421 Minatoku, Tokyo, Japan
No 7006 ShenNan Road, ShenZhen, China
Tel: 81-3-6403-5500 Fax: 81-3-6403-5590 / 5591
HOUSTON OFFICE Tel: 86-755-8257-1591 Fax: 86-755-8257-1584
13455 Cutton Rd Suite 1-I Houston, TX 77069, U.S.A OSAKA OFFICE
Tel: 1-281-444-4908 Fax: 1-281-444-4918 12 th Fl., Sumitomo Seimei Shin-Osaka Higashiguchi
Bldg., 1-19-4 Higashinakajima, Higashiyodogawa-Ku
NEW YORK OFFICE
Osaka 533-0033, Japan
10 Lafayette Court, Suite 10A Fishkill, NY 12524, U.S.A
Tel: 81-6-4809-8851 Fax: 81-6-4809-8966
Tel: 1-845-896-0353 Fax: 1-845-896-0577
RALEIGH OFFICE
5511 Capital Center Drive, Suite 330 Raleigh,
NC 27606, U.S.A
Tel: 1-919-859-1244 Fax: 1-919-859-3137
 HY2011MAR
[Link]