Unit-1

Q1: Calculate the magnetic field at a distance of 5 cm from a long, straight wire
carrying a current of 2 A.
Solution:

∮B⋅dl = μ0 I
Ampere’s law for a straight wire is given by:

The magnetic field around the wire is:

μ I
B= 0
2 πr
where:
I = 2 A, r = 0.05 m, μ0 = 4π × 10-7 T·m/A
Substitute the values:
−7
4 π ×10 × 2
B= = 8 × 10-6 T
2 π × 0.05
So, the magnetic field is 8 μT.

Q2: A long solenoid has 2000 turns per meter and carries a current of 1 A. Find the
magnetic field inside the solenoid.
Solution:
For a solenoid, the magnetic field is:
B = μ0 n I
where:
n = 2000 turns/m, I = 1 A, μ0 = 4π × 10-7 T·m/A
Substitute the values:
B = 4π × 10-7 × 2000 × 1 = 2.51 × 10-3 T
So, the magnetic field inside the solenoid is 2.51 mT.

Q3: A current of 5 A flows through a long straight wire. Calculate the magnetic field at a
distance of 10 cm from the wire.
Solution:
Using Ampere’s law for a straight wire:
μ I
B= 0
2 πr
where:
I = 5 A, r = 0.1 m, μ0 = 4π × 10-7 T·m/A
Substitute the values:
(4 π × 10−7 ×5)
B= = 10 × 10-6 T = 10 μT
(2 π × 0.1)
So, the magnetic field is 10 μT.

Q4: Determine the magnetic field inside a toroid with 1000 turns, carrying a current of
2 A, and having a mean radius of 15 cm.
Solution:
The magnetic field inside a toroid is:
μ NI
B= 0
2 πr
where:
N = 1000 turns, I = 2 A, r = 0.15 m, μ0 = 4π × 10-7 T·m/A
Substitute the values:
(4 π × 10−7 ×1000 ×2)
B= = 2.67 × 10-3 T
(2 π × 0.15)
So, the magnetic field is 2.67 mT.

Q5: A solenoid of length 0.5 m has 800 turns and carries a current of 2 A. Calculate the
magnetic field inside the solenoid.
Solution:
The magnetic field inside a solenoid is:
B = μ0 n I
where:
800
n= = 1600 turns/m, I = 2 A, μ0 = 4π × 10-7 T·m/A
0.5
Substitute the values:
B = 4π × 10-7 × 1600 × 2 = 4.02 × 10-3 T
So, the magnetic field is 4.02 mT.

Q6: A circular loop of radius 0.1 m carries a current of 4 A. Calculate the magnetic field
at the center of the loop.
Solution:
The magnetic field at the center of a circular loop is:
μ0 I
B=
(2 r )
where:
I = 4 A, r = 0.1 m, μ0 = 4π × 10-7 T·m/A
Substitute the values:
−7
( 4 π × 10 × 4)
B= = 25.13 × 10-6 T
(2 ×0.1)
So, the magnetic field is 25.13 μT.

Q7: A coaxial cable has an inner conductor carrying a current of 3 A. Calculate the
magnetic field at a point 4 cm from the conductor.
Solution:
For a coaxial cable, the magnetic field outside the conductor is given by:
μ I
B= 0
2 πr
where:
I = 3 A, r = 0.04 m, μ0 = 4π × 10-7 T·m/A
Substitute the values:
−7
( 4 π × 10 ×3)
B= = 1.5 × 10-5 T
(2 π ×0.04 )
So, the magnetic field is 15 μT.

Q8: A solenoid has 100 turns per meter and carries a current of 0.5 A. What is the
magnetic field inside the solenoid?
Solution:
The magnetic field inside a solenoid is:
B = μ0 n I
where:
n = 100 turns/m, I = 0.5 A, μ0 = 4π × 10-7 T·m/A
Substitute the values:
B = 4π × 10-7 × 100 × 0.5 = 6.28 × 10-5 T
So, the magnetic field is 62.8 μT.

Q9: A long wire carrying a current of 10 A produces a magnetic field of 20 μT. Find the
distance from the wire.
Solution:
Using Ampere’s law:
μ I
B= 0
2 πr
Rearranging for r:
μ I
r= 0
2π B
Substitute the values:
−7
( 4 π × 10 ×10)
r= = 0.1 m
(2 π ×20 ×10−6 )
So, the distance from the wire is 0.1 m or 10 cm.

Unit-2
Q.1 A silicon semiconductor has an intrinsic carrier concentration of 1.5 x 1010 cm-3 at 300 K.
If the mobility of electrons is 1350 cm2/Vs and that of holes is 480 cm2/Vs, calculate the
electrical conductivity of the material at 300 K.
Solution: Using the formula σ = e (nμe + pμh),
where n = p = intrinsic carrier concentration,
μe is the mobility of electrons, and μh is the mobility of holes.
σ = (1.6 x 10-19) (1.5 x 1010) (1350 + 480)
σ = 4.39 x 10-6 S/cm.

Q.2 A sample of doped semiconductor has an electron concentration of 5 x 1016 cm-3 and a
hole concentration of 2 x 1015 cm-3. If the electron mobility is 1000 cm2/Vs and the hole
mobility is 500 cm2/Vs, calculate the conductivity of the semiconductor.
Solution: Using the formula σ = q (nμe + pμh),
where n is the electron concentration and p is the hole concentration.
σ = (1.6 x 10-19) (5 x 1016) (1000) + (1.6 x 10-19) (2 x 1015) (500)
σ = 8.16 S/cm.

Q.3 For a semiconductor at 300 K, the Fermi level is 0.25 eV below the conduction band.
Calculate the probability that an energy state 0.1 eV above the Fermi level is occupied (k =
8.63 x 10-5 eV is Boltzmann constant).
Solution: Using the Fermi-Dirac distribution function
1

(
f(E) =
) where k = 8.63 x 10-5 eV is Boltzmann constant and T = 300 K
E−Ef ,

1+e
( kT )

is the temperature.
1

(
f(E) = ( )
0.0259 )
≈ 0.0204.
0.1

1+e

Q.4 A thin copper strip of thickness 0.01 cm carries a current of 5 A in a magnetic field of 0.2
T. If the Hall voltage is measured to be 2 μV, calculate the carrier concentration in copper (e =
1.6 x 10-19 C).
Solution: Using the Hall voltage equation
IB
VH = ,
net
we can rearrange to find n, the carrier concentration.
IB
n=
eV Ht
(5)(0.2)
n=
(1.6 ×10 × 2× 10−6 ×0.0001)
−19

n = 3.125 x 1028 /m3.

Q.5 In a semiconductor, the Hall coefficient is found to be 5 x 10-5 m3/C. Calculate the type
and concentration of charge carriers if the magnetic field applied is 0.5 T and the current is 1
A (e = 1.6 x 10-19 C).
Solution: The Hall coefficient
1
RH =
pe
Rearranging for n,
1
p=
( R H e)
1
p= −5 −19
(5 ×10 )(1.6 × 10 )
p = 1.25 x 1023 m-3.
Since RH is positive, the carriers are holes.
Q.6 A sample of p-type semiconductor has a Hall coefficient of 1.2 x 10-4 m3/C. If the current
passing through the sample is 0.1 A and the magnetic field is 0.3 T, calculate the Hall voltage
developed across a sample of thickness 0.05 cm.
Solution: Using the formula
R IB
VH = H .
t
−4
(1.2 ×10 )(0.1)(0.3)
VH =
0.0005
VH = 0.0072 V
VH = 7.2 x 10-3 V.
VH = 7.2 mV

Q.7 A copper wire has an electron concentration of 8.5 x 1028 electrons/m3 and an electron
mobility of 4.5 x 10-3 m2/Vs. Calculate the resistivity of the wire.
Solution:
1
using ρ =
ne μe
1
ρ= 28 −19 −3
(8.5 ×10 )(1.6 ×10 )(4.5 ×10 )
ρ ≈ 1.63 x 10-8 ohm·m.

Q.8 In an intrinsic semiconductor, the electron mobility is 1500 cm2/Vs and the electron
concentration is 2 x 1010 cm-3 at room temperature. Calculate the resistivity of the material.
Solution:
1
ρ=
ne μe
1
ρ= 10 −19
(2 ×10 )(1.6 ×10 )(1500)
ρ ≈ 2.08 x 105 ohm·cm
ρ = 208.33 k ohm·cm.

Q.9 A semiconductor material has an electron concentration of 1 x 1016 cm-3 and an electron
mobility of 200 cm2/Vs. Determine the resistivity of the material.
Solution:
n = 1 × 1016 cm−3 = 1 × 1016 × 106 = 1 × 1022 m−3
μe = 200 x 10-4 = 0.02 m2/Vs
1
ρ=
ne μe
1
ρ= 22 −19 −4
(1 ×10 )(1.6 ×10 )(200 ×10 )
ρ = 0.03125 ohm·m
ρ ≈ 3.125 ohm·cm.
Q.10 A copper wire has an electron concentration of 8.5 x 1028 electrons/m3 and an electron
mobility of 4.5 x 10-3 m2/Vs. Calculate the conductivity of the wire using σ = neμe.
Solution:
σ = n e μe
σ = (8.5 x 1028) (1.6 x 10-19) (4.5 x 10-3)
σ ≈ 6.12 x 107 S/m.

Q.11 A semiconductor material has an electron concentration of 2 x 1016 cm-3 and an electron
mobility of 1000 cm2/Vs. Determine its electrical conductivity.
Solution:
σ = n e μe
σ = (2 x 1016) (1.6 x 10-19) (1000)
σ ≈ 3.2 S/cm.

Q.12 Calculate the conductivity of a silicon semiconductor with an electron mobility of 1500
cm2/Vs and an electron concentration of 1 x 1010 cm-3.
Solution:
σ = neμe
σ = (1 x 1010) (1.6 x 10-19) (1500)
σ ≈ 2.4 x 10-6 S/cm.

Q.13 For an intrinsic silicon sample at 300 K, the intrinsic carrier concentration ni is 1.5 x
1010 cm-3, the electron mobility μe is 1350 cm2/Vs, and the hole mobility μh is 480 cm2/Vs.
Calculate the intrinsic conductivity σi.
Solution:
σi = ni e (μe + μh)
σi = (1.5 x 1010) (1.6 x 10-19) (1350 + 480)
σi ≈ 4.392 x 10-6 S/cm.

Q.14 A semiconductor has an intrinsic carrier concentration of 2 x 1016 cm-3, electron mobility
μn of 1200 cm2/Vs, and hole mobility μh of 400 cm2/Vs. Calculate the intrinsic conductivity.
Solution:
σi = ni e (μe + μh)
σi = (2 x 1016) (1.6 x 10-19) (1200 + 400)
σi ≈ 5.12 S/cm.

Q.15 An intrinsic germanium sample has a carrier concentration of 2.5 x 1013 cm-3 at room
temperature, with an electron mobility of 3900 cm2/Vs and a hole mobility of 1900 cm2/Vs.
Find the intrinsic conductivity.
Solution:
σi = ni e (μe + μh)
σi = (2.5 x 1013) (1.6 x 10-19) (3900 + 1900)
σi ≈ 23.2 x 10-3 S/cm
σi = 23.2 mS/cm.

Q.16 A p-type semiconductor has a hole concentration of 1 x 1016 cm-3 and a hole mobility of
300 cm2/Vs. Calculate the conductivity using σh = peμh.
Solution:
σh = peμh
σh = (1 x 1016) (1.6 x 10-19) (300)
σh ≈ 0.48 S/cm.

Q.17 A sample of p-type semiconductor has a hole concentration of 5 x 1015 cm-3 and a hole
mobility of 500 cm2/Vs. Determine its conductivity.
Solution:
σh = peμh
σh= (5 x 1015) (1.6 x 10-19) (500)
σh≈ 0.40 S/cm.

Q.18 In a p-type semiconductor, the hole concentration is 8 x 1016 cm-3 and the hole mobility
is 350 cm2/Vs. Calculate the conductivity using σh = peμh.
Solution:
σh = peμh
σh= (8 x 1016) (1.6 x 10-19) (350)
σh≈ 4.48 S/cm.

Q.19 Calculate the resistivity of n-type silicon doped with 5 × 10¹⁵ cm⁻³ donor atoms.
Assume electron mobility is 1350 cm²/Vs and hole mobility is 480 cm²/Vs.
Solution:
The resistivity ρ of a semiconductor is given by:
1
ρ=
e (n μₙ+ p μₚ)
For n-type semiconductors, p (hole concentration) is negligible, so the formula reduces to:
1
ρ=
e n μₙ
Where: q = 1.6 × 10⁻¹⁹ C, n = 5 × 10¹⁵ cm⁻³, μₙ = 1350 cm²/Vs
1
ρ= = 92.59 Ω·cm
(1.6 ×10 ⁻ ¹⁹)×(5 ×10¹⁵)×1350
The resistivity of the doped silicon is approximately 0.9259 Ω·cm.

Q.20 Calculate the conductivity of intrinsic silicon at 300 K. The intrinsic carrier
concentration is 1.5 × 10¹⁰ cm⁻³, and the mobilities of electrons and holes are μₙ = 1350
cm²/Vs and μₚ = 480 cm²/Vs, respectively.
Solution:
The conductivity σ is given by:
σ = e (n μe + p μh)
For intrinsic silicon, n = p = nᵢ, so:
σ = e nᵢ (μe + μh)
Where: e = 1.6 × 10⁻¹⁹ C, nᵢ = 1.5 × 10¹⁰ cm⁻³, μe = 1350 cm²/Vs, μh = 480 cm²/Vs
σ = (1.6 × 10⁻¹⁹) × (1.5 × 10¹⁰) × (1350 + 480)
σ = 4.39 × 10⁻⁶ S/cm
Thus, the conductivity of intrinsic silicon at 300 K is approximately 4.39 × 10⁻⁶ S/cm.

Q.21 A silicon sample has a resistivity of 0.2 Ω·m at room temperature. If the electron
mobility is 1350 cm²/Vs, calculate the doping concentration (donor atoms per cubic meter).
Solution:
Using the formula for resistivity:
1
ρ=
e n μe
Rearranging to solve for n:
1
n=
e μe ρ
Where: ρ = 0.2 Ω·m = 20 Ω·cm, e = 1.6 × 10⁻¹⁹ C, μₙ = 1350 cm²/Vs
1
n= ≈ 2.31 × 1014 cm⁻³
(1.6 ×10 ⁻ ¹⁹)× 1350× 20
Thus, the doping concentration is approximately 2.31 × 1014 cm⁻³.

Q.22 A sample of germanium is doped with 1 × 10¹⁵ cm⁻³ arsenic atoms. The electron
mobility is 3600 cm²/Vs. Calculate the conductivity of the sample.
Solution:
The conductivity σ is given by:
σ = e n μe
Where: e = 1.6 × 10⁻¹⁹ C, n = 1 × 10¹⁵ cm⁻³, μe = 3600 cm²/Vs
σ = (1.6 × 10⁻¹⁹) × (1 × 10¹⁵) × 3600 = 0.576 S/cm
Thus, the conductivity of the sample is 0.576 S/cm.

Q.23 Calculate the resistivity of a p-type silicon sample with a hole concentration of 8 × 10¹⁵
cm⁻³ and hole mobility of 450 cm²/Vs.
Solution:
For a p-type semiconductor, the resistivity ρ is given by:
1
ρ=
e p μh
Where: e = 1.6 × 10⁻¹⁹ C, p = 8 × 10¹⁵ cm⁻³, μh = 450 cm²/Vs
1
ρ= = 1.736 Ω·cm
(1.6 ×10 ⁻ ¹⁹)×(8 × 10¹⁵)× 450
Thus, the resistivity of the p-type silicon sample is 1.736 Ω·cm.
Q.24 A silicon sample has a resistivity of 100 Ω·cm at 300 K. After doping with phosphorus,
the resistivity drops to 0.5 Ω·cm and the mobility of electrons is 1350 cm²/Vs. Estimate the
donor concentration (in cm⁻³) in the doped silicon.
Solution:
1
For n-type silicon, ρ =
e n μe
Rearranging to solve for n:
1
n=
e ρ μe
Where: ρ = 0.5 Ω·cm, e = 1.6 × 10⁻¹⁹ C, μe = 1350 cm²/Vs
1
n= = 9.26 × 1015 cm⁻³
(1.6 ×10 ⁻ ¹⁹)× 1350× 0.5
Thus, the donor concentration is approximately 9.26 × 1015 cm⁻³.

Q.25 A Hall effect experiment is conducted on a silicon sample. The Hall voltage is measured
to be 30 mV when a current of 10 mA is passed through the sample under a magnetic field of
1 T. Calculate the carrier concentration in the sample. Thickness of the sample assumed to be
1 cm.
Solution:
The carrier concentration n can be calculated using the Hall voltage formula:
I
n=
eV Hd B
Where: I = 10 mA = 10 × 10⁻³ A, VH = 30 mV = 30 × 10⁻³ V,
d = thickness of the sample (assumed to be 1 cm), B = 1 T, q = 1.6 × 10⁻¹⁹ C
(10× 10−3 ×1)
n=
[(1.6 × 10⁻ ¹⁹)×(30 × 10⁻ ³)× 0.01]
n ≈ 2.08 × 1020 m⁻³
Thus, the carrier concentration in the sample is approximately 2.08 × 1020 m⁻³ or 2.08 × 1016
cm⁻³