Q.

1WHAT IS A SEMICONDUCTOR
Semiconductors are the materials which have a conductivity between conductors (generally
metals) and non-conductors or insulators
EXAMPLES- Gallium arsenide, germanium, and silicon are some of the most commonly used
semiconductors. Silicon is used in electronic circuit fabrication and gallium arsenide is used
in solar cells,
Types of Semiconductors
Doping is the process of adding impurities to intrinsic
semiconductors to alter their properties.

Question 2.
Distinguish between an intrinsic semiconductor and p-type semiconductor. Give reason, why, a p-type
semiconductor crystal is electrically neutral although n h >> ne? (Delhi 2008)
(b).Why extrinsic semiconductor is neutral
Answer:
(ii) In a p-type semiconductor, the trivalent impurity atom shares its three valence electrons with the
three tetravalent host atoms while the fourth bond remains unbounded. The impurity atom as a
whole is electrical neutral. Hence the p-type semiconductor is also neutral.
[Link] the energy band diagram of
(i) n-type and
(ii) p-type semiconductor at temperature, T > OK. In the case n-type Si semiconductor, the donor level
is slightly below the bottom of conduction band. whereas in p-type semiconductor, the aceceptor
energy level is slightly above the top of the valence band. Explain, what role do these energy levels
play in conduction and valence bands. (Comptt. All India 2014)
Answer:
For energy level diagrams of n-type and p-type semiconductors:
Distinction between n-type and p-type semiconductors on the basis of energy level diagram :

(i) In n-type semi conductors an extra energy level (called donor energy level) is produced just below
the bottom of the conduction band, while in the p-type semiconductor, this extra energy band (called
acceptor energy level) is just above the top of the balanced band.
(ii) In n-type semiconductors, most of the electrons come from the donor impurity while in p-type
semiconductor, the density of holes in the valence band is predominantly due to the impurity in the
extrinsic semiconductors.
(iii) At absolute zero temperature conductivities of both types of semi-conductors will be zero.
(iv) For equal doping, an n-type semiconductor will have more conductivity than a p-type
semiconductor, at room temperature.
Question 4. What is the difference between an N-type and a p-type intrinsic semiconductor? (Comptt.
Delhi 2008)Answer:

DIODE
[Link] how a depletion region is formed in a junction diode. (Delhi 2011)
Answer:
As soon as a p-n junction is formed, the majority charge carriers begin to diffuse from the regions of
higher concentration to the regions of lower concentrations. Thus the electrons from the n-region
diffuse into the p-region and where they combine with the holes and get neutralised. Similarly, the
holes from the p-region diffuse into the n-region where they combine with the electrons and get
neutralised. This process is called electron-hole recombination.
The p-region near the junction is left with immobile -ve ions and n-region near the junction is left with
+ve ions as shown in the figure. The small region in the vicinity of the junction which is depleted of
free charge carriers and has only immobile ions is called the depletion layer. In the depletion region, a
potential difference VB is created, called potential barrier as it creates an electric field which opposes
the further diffusion of electrons and holes.
(i) In forward biased, the width of depletion region is decreased.
(ii) In reverse biased, the width of depletion region is increased.
Question 6. (a) Draw the circuit diagrams of a p-n junction diode in
(i) forward bias,
(ii) reverse bias. How are these circuits used to study the V – I characteristics of a silicon diode? Draw
the typical V – I characteristics.
Answer:

The battery is connected to the silicon diode through a potentiometer (or rheostat), so that the
applied voltage can be changed for different values of voltages, the corresponding values of current
are noted.

Using the circuit arrangements shown in fig. (i) and fig (ii), we study the variation of current with
applied voltage to obtain the V-I characteristics.
From the V-I characteristics of a junction diode, it is clear that it allows the current to pass only when
it is forward biased. So when an alternatively voltage is applied across the diode, current flows only
during that part of the cycle when it is forward biased.
APPLICATION
Question 7. Explain, with the help of a circuit diagram, the working of a p-n junction diode as a half-
wave rectifier. (All India 2013)
Answer: Rectifier. A rectifier is a circuit which converts an alternating current into direct current.
p-n diode as a half wave rectifier. A half wave rectifier consists of a single diode as shown in the circuit
diagram. The secondary of the transformer gives the desired a.c. voltage across A and B.
In the positive half cycle of a.c., the voltage at A is positive, the diode is forward biased and it
conducts current.

In the negative half cycle of a.c., the voltage at A is negative, the diode is reversed biased and it does
not conduct current.
Thus, we get output across RL during positive half cycles only. The output is unidirectional but varying
Question 8. Draw a labelled diagram of a full wave rectifier circuit. State its working principle. Show
the input-output waveforms. (All India 2009)
Answer: p-n junction diode as full wave rectifier
A full wave rectifier consists of two diodes and special type of transformer known as centre tap
transformer as shown in the circuit. The secondary of transformer gives the desired a.c. voltage across
A and B.
During the positive half cycle of a.c. input, the diode D1 is in forward bias and conducts current while
D2 is in reverse biased and does not conduct current. So we get an output voltage across the load
resistor RL.

During the negative half cycle of a.c. input, the diode D1 is in reverse biased and does not conduct
current while diode D2 in forward biased and conducts current. So we get an output voltage across the
load resistor RL.