JFET Characteristics and Amplifier Study
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ScribdTranslationsJFET Characteristics and Amplifier Study
Translated by
ScribdTranslationsIFIPS 1st year Analog Electronics
Electronic department
TP 2 - Study of the Field Effect Transistor
Preliminary remarks:
1-In this lab we use a JFET, that is to say a junction field-effect transistor and
not a MOSFET that has an insulated gate. Indeed, MOS transistors are rare in
discrete elements for amplifier operation because they are very fragile
electrostatically. This is why we are forced to use N-channel JFETs that have
current-voltage characteristics similar to those of a normally on N-channel MOSFET,
except that they do not support positive polarization on the grid.
The polarization of an N-channel JFET is therefore:
V GS< 0 and
DS 0V
It is reminded that every component has operating limits.
average performances given by the manufacturer: before any use of a component (diode
The transistor) it is therefore essential to refer to the manufacturer's datasheets (see binder in
lab room.
I-Study of the transistor on the test board (N-channel J-FET 2N4416)
1-Point by point tracing of the characteristics I = fd(V) at Vds
= constant
gs
Preparation: Design a common source circuit with two DC power supplies
independent (pay attention to the grid and drain polarities), which allows you to plot this
network. The measuring device is the oscilloscope to determine dboth I and V; whatds
What constraint does this introduce regarding the characteristics of at least one of the power supplies?
Measurements: Set up the assembly and record 3 or 4 characteristics on graph paper.
from V = 0gs
to V = V (valuegs
ofgs
V for
T which the transistor is blocked).
Exploitation of the results: Deduce from this network and plot on the same sheet (that we will have
prepared accordingly) the transfer characteristic I = f' (Vd) for V Cte
gs ds
(static transfer characteristic); we will take V = 10Vds
Determine I dss and V T
Evaluate r o(dynamic output resistance), for each of the plotted characteristics,
around V = ds10V
Determine the transconductance g for m different values of V gs
2-Study of the transfer characteristic I = f' (V)
d at V =
gsConstant
ds
Preparation: Is it possible to modify the previous setup in order to trace directly
on the oscilloscope, while respecting the required polarities for the drain and gate voltages, the
desired characteristic? We will study two cases: a first case for which the source of
tension is isolated from the sector and a second case when the source imposes the mass of the sector.
1
Measures: Carry out the assembly and visualize the transfer characteristic under the conditions
optimal: deduce I anddss
V and Tcompare them with the values obtained previously. Do
vary the parameters that deviate us from the static transfer characteristic and observe
the deformations of the visualized curve.
3-Study of a common source amplifier circuit:
a - Study of the polarization of the assembly
This is the assembly proposed in the following figure:
E
with
RD
C1
E = 22V
G D
RD = 2.2k:
S
Rg = 1M:
Rs Cs VS
Ve Rg Cl = 0.47 or 1 µF
Preparation:
What are the roles of C capabilities?Sand C1in this setup? In the study of polarization
Is it necessary to take into account the capacitors C?1and CS?
This circuit has only one power supply, the grid bias being
ensured by the resistance R. S What is the role of the resistance R?
g
Draw the static transfer characteristic using the average data from
constructor for the component used (I = dss 10 mA; V = -3 V) T and assuming that the
the curve is well represented by the function: Id = dss /V) T 2
I ( 1 - Vgs
Choose a polarization point such that I I do dss / 2 (in the quasi-linear part of the
transfer characteristic); deduce V gso and the transconductance gmo to the point of
polarization
Calculate R Sto ensure this operating point; deduce V. dso
Manipulation:
Adjust the numerical values for the components by comparing them to your theoretical curve.
to the measurements taken in the previous questions 1 and 2.
Carry out the assembly.
Characterize the polarization point through appropriate measurements.
2
c - Small signal study
Preparation:
From what frequency does the capacity C1may be equated to a short circuit considering
of its value indicated above? We will consider in this question that the output of the assembly
attack a load resistance of 1 M:.
- Make the equivalent small signal diagram of the circuit in the bandwidth; calculate the
theoretical expressions of voltage amplification A, input v impedance and
the output impedance of this circuit, give their numerical values (we will assume r o
infinite, r0 being the output resistance of the transistor.
We want to take into account the presence ofS C:
give the expression of A under
v these conditions
plot the variations with the frequency of G(Z) = 20 log |A| v
deduce the value of C that Sallows obtaining a low cutoff frequency of the
300Hz assembly
Manipulation:
In the bandwidth, measure the voltage gain, the input and output impedances;
characterize the bandwidth of the circuit. Conclusion.
b - Study in large signals
Manipulation
Choose a working frequency within the bandwidth. Using a sine wave,
gradually increase the amplitude of the signal until observing the different
output signal distortions.
How do you interpret these deformations based on the
characteristics noted of the component and on the structure of a JFET reminded on
the following figure.
Drain Grille Source
N+ P+ N+
P channel N P
substrate P Metal
Structure of a JFET in planar technology
In order to protect the component, where on the assembly can one place a
additional resistance?