3.
PMOS
AIM: To study the P-MOSFET and plot the I-V characteristics curves using simulation
Tool used: Some study about P-MOSFET and Cogenda Visual TCAD tool
Theory: P-MOSFET is a type of transistor and basically a four terminal voltage controlled
device used in the electronic circuits with the terminal names are GATE, SOURCE, DRAIN,
and SUBSTRATE
There are two types of P-MOS (i) Depletion Type (ii) Enhancement Type
Depletion Type : There is the presence of impurity in the substrate during the
fabrication process that makes near the channel region that makes easy the flow of
current even when there is no biasing due to the presence of a channel already
Enhancement Type : There is the mobility is blocked of those minority charge particles
in the substrate by using Voltage threshold doping to enhance the device
Voltage threshold doping : During the fabrication process a doping with is done below
the gate region to enhance the threshold voltage of the device so that device will not start
very sooner due to the presence of minority charge particles , with the help of this doping
the holes and the electron recombination takes place and the area left below gate is
remain neutral until the biasing with suitable work function of the gate material is applied
on the device
Fig 3 (a) Types of MOSFET
OPERATIONS
when we apply the constant biasing for DRAIN and voltage sweep biasing on GATE to
have the characteristics plot between the Voltage (applied on gate) Vs current from
DRAIN this is known as TRANSFER characteristics
when we apply the voltage sweep biasing on DRAIN and fix biasing on GATE to have
the characteristics plot between the Voltage (applied on drain) Vs current from DRAIN
this is known as OUTPUT characteristics
Below in figure are the P-MOSFET standard characteristics
Fig 3(b) Transfer characteristics Curve
Fig 3(c) Output characteristics Curve
Procedure:
1. Open the Visual TCAD tool by clicking on the icon in start menu for windows user and
for Linux(ubuntu or rhel) open the terminal [ctrl+alt+t]
2. Go to the new file and choose the Device Drawing as an option
3. A window with black background will open up with default grid spacing width of
0.01um
4. He are preparing a P-MOSFET of (L=0.6um x H=0.5um) with the Source region and the
Drain region (L=0.1um x H=0.03um) and Substrate (L=0.6um x H=0.5um) along with
Gate (L=0.2um x H=0.03um) and oxide (L=0.2um x H=0.01um).
5. With the help of the shapes given on the left top use rectangular shape to design the
device
6. The actual shape is designed below using the rectangular shape
Fig 3(d) Structure of a MOSFET
7. Add the region label substrate (0.6um x 0.5um) from the silicon material with the mesh
size assumed as 1/10th of the block size e.g. as it is of 4um block length so max. meshing
size will be 0.05um
8. Add the region label of the another three blocks that are Source(L=0.03um x H=0.1um),
Drain(L=0.1um x H=0.03um), Substrate (0.6um x 0.02um) with the aluminum (Al)
region and keep the max mesh size same as given by default as we don’t require to
calculate on the metal-semiconductor junctions. Another two regions are Gate with
material (P Poly Silicon) along with the oxide region below Gate region with material
(silicon oxide) having the mesh size of 0.05.
Fig 3(e) Structure of a MOSFET with all regions with material
Fig 3(f) Source region with material meshing and details
Fig 3(g) Substrate region with material meshing and details
Fig 3(h) Drain region with material meshing and details
Fig 3(i) Gate region with material meshing and details
Fig 3(j) Oxide region with material meshing and details
Fig 3(k) Body with material and meshing Details
9. Now with the option of Add Doping Profile we will make the two regions
First doping profile is uniform doping profile of N type /Acceptor with the
doping concentration of (1e+16)/cm3 across the whole region from top to bottom
uniformly or we can say (0.6um x 0.5um) above the Body region from top to
bottom
Second doping profile is of P type / Donor starts below the Oxide layer and
from top to bottom towards both extreme left to the Source as well as extreme
right to the Drain with the dimensions (0.2um x 0.01um) along with the doping
conc.( 1e+18) /cm3 and the Y-characteristics length will be 0.005um with X-Y
ratio of 1.
Third doping profile is also of P type / Donor starts below the mid of the Source
and Drain with Oxide as common, from top to bottom towards both extreme
left to the Source as well as extreme right to the Drain with the dimensions
(0.15um x 0.02um) along with the doping conc. (1e+20) /cm3 and the Y-
characteristics length will be 0.025um with X-Y ratio of 0.8.
Fourth doping profile is of N type /Acceptor for the threshold voltage doping
implant with the doping concentration (1e+18) /cm3 along with the
characteristics length of 0.01um and X-Y ratio is 1.
Fig 3(l) Doping Profile structure view
10. Now with the option Do Mesh [ ]we can meshed the device and refine the mesh with
the option Refine Existing Mesh [ ] and we can also do the mesh by spring method
,the area of junction will be so denser after refining it 2-3 times ,the tool automatically
detect the Junction of material and used to do the denser mesh at junctions automatically
Fig 3(m) Meshing of PMOS
11. After the meshing being done we will save this file to .tif file using Device option in
menu bar above we will get an option below “Save mesh to file”
12. After the mesh file saved to .tif file go to the file option above and open the Device
simulation
13. From the folder below Setup with the location we can open the .tif file and it will take
some time or earlier load the structure from .tif file along with the contacts shown on the
middle electrode work area e.g. GATE, SOURCE, DRAIN, and SUBSTRATE
14. We will apply biasing as shown in fig below
Fig 3(n) PMOS Simulation
15. Now Provide some Voltage Sweep biasing to the GATE (-2v with step size 0.05) and
Drain with Constant voltage e.g. (-0.5,-1,-1.5,-2) and save with some name then with the
help of Run button we can simulate our device by firstly save as a .sim file and then
create a folder named as results or run or as per user wants to give name to it, after
choosing the folder for simulation our simulation will be submitted and will give the
results or we can open the file [Link] from the folder we have selected to simulate in.
16. Now we can Plot the data with the help of results or spreadsheets between I(Drain) and
V app(GATE)
17. Results with Spreadsheet and Plot are given below:
Fig 3(o) PMOS Simulation Input Results
Fig 3(p) PMOS Simulation transfer characteristics Plots
19. We will also do the simulation to plot output characteristics by sweeping the voltage of
DRAIN and making the contestant voltage supply at GATE shown in the figure below
with results and also multiple results plot with different GATE voltage with the help of
the option [ ] after the graph will be plotted
Fig 3(q) PMOS Simulation Output Results
Fig 3(r) PMOS Simulation transfer characteristics Plots
20. We will also make circuit symbol and do the simulation of the PMOS as Circuit-Mixed
Mode simulation shown below is the PMOS conversion steps into circuit element steps
21. Now again load the .sim file into the device simulation option and select the Circuit
element in Simulation Mode option as shown