Datasheet

7 V to 76 V Input, 5 A Integrated High –Side

MOSFET, Single Buck DC/DC Converter
BD9G500EFJ-LA
General Description Key Specifications
This is the product guarantees long time support in  Input Voltage Range: 7 V to 76 V
industrial market.  Input Absolute Maximum Rating: 80 V
BD9G500EFJ-LA is buck DC/DC converter with built-in 85 V (1 ms pulse , 50 % duty or less)
low on-resistance High-Side power MOSFET. It is  Reference Voltage Accuracy: 1.0 V±1.0 %
capable of providing current of up to 5 A. Current mode  Output Current: 5 A (Max)
architecture provides fast transient response and simple  High-Side MOSFET ON-Resistance: 100 mΩ (Typ)
phase compensation setup. The operating frequency is  Shutdown Current: 0 μA (Typ)
adjustable from 100 kHz to 650 kHz.  Operating Temperature Range: -40 °C to +125 °C

Features Package W (Typ) x D (Typ) x H (Max)

 Long Time Support Product for Industrial Applications. HTSOP-J8 4.9 mm x 6.0 mm x 1.0 mm
 Wide Input Voltage Range
 Integrated High-Side MOSFET
 Current Mode Control
 Adjustable Frequency
 Soft Start Function
 Over Current Protection (OCP)
 Under Voltage Lockout (UVLO)
 Thermal Shutdown Protection (TSD)
 Over Voltage Protection (OVP)
 HTSOP-J8 package

Applications
 Industrial Equipment
 Power Supply for FA’s Industrial Device
 Communications Power Systems

Typical Application Circuits

VIN
8 VIN BOOT 7

CBOOT
CIN R1 BD9G500EFJ-LA L VOUT
SW 1

6 EN
D1 COUT

R2 COMP RT GND FB

3 5 2 4

CCOMP R3

RCOMP RRT R4

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.
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Pin Configuration

(TOP VIEW)

SW 1 8 VIN

GND 2 7 BOOT
EXP-PAD
COMP 3 6 EN

FB 4 5 RT

Pin Descriptions

Pin No. Pin Name Function

Switch pin. This pin is connected to the source of the High-Side MOSFET.
1 SW
Connect a schottky barrier diode between this pin and the GND pin.

2 GND Ground pin.

Output pin for the gm error amplifier and input to the PWM comparator.
3 COMP
Connect phase compensation components to this pin.

Output voltage feedback pin.

4 FB See Selection of Components Externally Connected Output Voltage Set Point for how
to calculate the resistance of the output voltage setting.
The internal oscillator frequency set pin. The internal oscillator is set with a single
5 RT resistor connected between this pin and the GND pin. Frequency range is 100 kHz to
650 kHz.
Turning this pin signal low (0.4 V or lower) forces the device to enter the shutdown
6 EN mode. Turning this pin signal high (2.5 V or higher) enables the device. This pin must
be terminated.

Bootstrap pin. Connect a bootstrap capacitor of 1 µF between this pin and the SW
7 BOOT
[Link] voltage of this capacitor is the gate drive voltage of the High Side MOSFET.

Power supply pin. This pin for the switching regulator and control circuit.
8 VIN
Connecting 15 µF and 1 µF ceramic capacitors are recommended.

A backside heat dissipation pad. Connecting to the internal PCB Ground plane by
- EXP-PAD
using via provides excellent heat dissipation characteristics.

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Block Diagram

VIN VIN VIN

3V 5V
EN 6 VREF VREG BOOTREG 7 BOOT

OCP

UVLO OSC OVDIS 8 VIN

TSD

OVP
VIN

1 SW
ERR SLOPE DRIVER
＋
LOGIC
＋
FB 4 －
PWM
＋
SW
COMP 3 －

SOFT
START

5 2

RT GND

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Description of Blocks

VREF
Block creating internal reference voltage 3 V (Typ).

VREG
Block creating internal reference voltage 5 V (Typ).

BOOTREG
Block creating gate drive voltage.

TSD
The TSD block is for thermal protection. It shuts down the device when the internal temperature of IC rises to
175 °C (Typ) or more. Thermal protection circuit resets when the temperature falls. The circuit has a hysteresis of
25 °C (Typ).

UVLO
This is under voltage lockout block. It shuts down the device when the VIN pin voltage falls to 6.4 V (Typ) or less.
The UVLO threshold voltage has a hysteresis of 200 mV (Typ).

ERR
The ERR amplifier is the circuit which compares the feedback voltage of the output voltage with the reference voltage.
The ERR amplifier output (the COMP pin voltage) determine the switching duty.

OSC
Block generating oscillation frequency.

SLOPE
Creates delta wave from clock, generated by OSC, and voltage composed by current sense signal of High-Side
MOSFET.

PWM
Settles the switching duty by comparing the output COMP pin voltage of ERR amplifier and signal of SLOPE block.

DRIVER LOGIC
This is DC / DC driver control block. Input signal from PWM and drives MOSFET.

SOFT START
The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the
prevention of output voltage overshoot and inrush current.

OCP
Current flowing in High-Side MOSFET is controlled one cycle when over current occurs. If OCP function 4 times
sequentially, the device stops the operation for 20 ms (Typ) and subsequently initiates a restart.

OVP
When the FB pin voltage is 1.2 V (Typ) or more, it turns High-Side MOSFET OFF. After FB pin voltage drops, it returns
to normal operation with hysteresis. This IC has Discharge MOS. This MOS turns on 100 ns (Typ) at each duty cycle.
When the FB pin voltage is 2.0 V (Typ) or more, it turns Discharge MOS off also.

OVDIS
When the FB pin voltage is 1.0 V (Typ) or more and 2.0 V (Typ) or less and remains in that state for 16 cycle, the
Discharge MOS On-time is set to 400 ns (Typ) and discharge output voltage.

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Absolute Maximum Ratings (Ta = 25 °C)

Parameter Symbol Rating Unit
Input Voltage VIN -0.3 to +80.0 V
Input Voltage (1 ms pulse , 50 % duty or less) VINPULSE -0.3 to +85.0 V
EN Pin Voltage VEN -0.3 to +80.0 V
Voltage from GND to BOOT VBOOT -0.3 to +85.0 V
Voltage from SW to BOOT(Note 1) ΔVBOOT-SW -0.3 to +7.0 V
FB Pin Voltage VFB -0.3 to + 7.0 V
COMP Pin Voltage VCOMP -0.3 to + 7.0 V
RT Pin Voltage VRT -0.3 to + 7.0 V
SW Pin Voltage VSW -0.5 to VIN + 0.3 V
Maximum Junction Temperature Tjmax 150 °C
Storage Temperature Range Tstg -55 to +150 °C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing
board size and copper area so as not to exceed the maximum junction temperature rating.
(Note 1) Because this IC Voltage from SW to BOOT absolute maximum rating is 7.0 V, Do not short VIN Pin to BOOT Pin after power ON.

Thermal Resistance(Note 2)
Thermal Resistance (Typ)
Parameter Symbol Unit
1s(Note 4) 2s2p(Note 5)
HTSOP-J8
Junction to Ambient θJA 112.8 24.3 °C/W
Junction to Top Characterization Parameter(Note 3) ΨJT 6.0 2.0 °C/W
(Note 2) Based on JESD51-2A (Still-Air).
(Note 3) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface
of the component package.
(Note 4) Using a PCB board based on JESD51-3.
(Note 5) Using a PCB board based on JESD51-5, 7.
Layer Number of
Material Board Size
Measurement Board
Single FR-4 114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern Thickness
Footprints and Traces 70 μm
Layer Number of Thermal Via(Note 5)
Material Board Size
Measurement Board Pitch Diameter
4 Layers FR-4 114.3 mm x 76.2 mm x 1.6 mmt 1.20 mm Φ0.30 mm
Top 2 Internal Layers Bottom
Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness
Footprints and Traces 70 μm 74.2 mm x 74.2 mm 35 μm 74.2 mm x 74.2 mm 70 μm
(Note 5) This thermal via connects with the copper pattern of all layers.

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Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

Input Voltage VIN 7 - 76 V

Operating Temperature Topr -40 - +125(Note 1) °C

Output Current IOUT 0 - 5 A

Output Voltage Range VRANGE 1.0(Note 2) - 0.97 × VIN(Note 3) V

(Note 1) Tj must be lower than 150 °C under actual operating environment.
(Note 2) Use it in output voltage setting of which output pulse width does not become 350 ns (Typ) or less.
(Note 3) When fosc = 200 kHz setting, the maximum Output Voltage is close to 0.97 (Typ) × (VIN - RONH × IOUT).

Electrical Characteristics ( Unless otherwise specified Tj = -40 °C to +125 °C, VIN = 48 V, VEN = 3 V )
Parameter Symbol Min Typ Max Unit Conditions

VFB = 3.0 V
Operating Supply Current IOPR - 0.75 1.50 mA
Tj = 25 °C

VEN = 0 V
Shutdown Current ISD - 0 10 µA
Tj = 25 °C

FB Threshold Voltage (Note 4) VFB 0.99 1.00 1.01 V

FB Input Current IFB -0.1 0 +0.1 µA VFB = 1.1V

Switching Frequency Range

fRTOSC 100 - 650 kHz Tj = 25 °C
Using RT Pin

Tj = 25 °C
Switching Frequency fOSC 180 200 220 kHz
RT = 47 kΩ

High-Side MOSFET ISW = -50 mA

RONH - 100 140 mΩ
ON-Resistance Tj = 25 °C

Without switching
Over Current limit(Note5) ILIMIT 6.4 8.0 - A
Open Loop

UVLO Threshold Voltage VUVLO 6.1 6.4 6.7 V VIN falling

UVLO Hysteresis Voltage VUVLOHYS 100 200 300 mV

EN High-Level Input Voltage VENH 2.5 - - V

EN Low-Level Input Voltage VENL 0 - 0.4 V

VEN = 3 V
EN Input Current IEN 1.15 2.30 4.60 µA
Tj = 25 °C

Soft Start Time tSS 15 20 25 ms

(Note 4) Only tested Tj = 25 °C on outgoing inspection.
(Note 5) No tested on outgoing inspection.

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Typical Performance Curves

1.5 10.0
VIN = 48 V
VIN = 76 V 9.0
Operating Supply Current : IOPR [mA]

1.4

Shutdown Current : ISD [µA]

1.2 8.0
VIN = 48 V
1.1 7.0

0.9 6.0

0.8 5.0

0.6 4.0

0.5 VIN = 7 V 3.0

0.3 2.0

0.2 1.0

0.0 0.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125

Temperature : Tj [℃] Temperature : Tj [℃]

Figure 1. Operating Supply Current vs Temperature Figure 2. Shutdown Current vs Temperature

1.010 0.5
VFB = 1.1 V
FB Threshold Voltage : VFB [V]

FB Input Current : IFB [µA]

0.4
1.005

0.3

1.000

0.2

0.995
0.1

0.990 0.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125

Temperature : Tj [℃] Temperature : Tj [℃]

Figure 3. FB Threshold Voltage vs Temperature Figure 4. FB Input Current vs Temperature

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Typical Performance Curves - continued

220 300

ON-Resistance : RONH [mΩ]

Switching Frequency : fOSC [kHz]

250

High-Side MOSFET
210
200

200 150

100
190

50

180 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125

Temperature : Tj [℃] Temperature : Tj [℃]

Figure 5. Switching Frequency vs Temperature Figure 6. High Side MOSFET ON-Resistance vs Temperature

15.0 7
UVLO Threshold Voltage : VUVLO [V]

VIN Sweep up
Over Current Limit : ILIMIT [A]

13.0 6.8

11.0 6.6

9.0 6.4

VIN Sweep down

7.0 6.2

5.0 6
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125

Temperature : Tj [℃] Temperature : Tj [℃]

Figure 7. Over Current Limit vs Temperature Figure 8. UVLO Threshold Voltage vs Temperature

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Typical Performance Curves - continued

2.5 10.0
EN Threshold Voltage : VEN [V]

EN Input Current : IEN [µA]

2.0 EN Sweep up 8.0

1.5 6.0

1.0 4.0

EN Sweep down
0.5 2.0

0.0 0.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125

Temperature : Tj [℃] Temperature : Tj [℃]

Figure 9. EN Threshold Voltage vs Temperature Figure 10. EN Input Current vs Temperature

30 650
Switching Frequency : fOSC [kHz]

575
Soft Start Time : tSS [ms]

25 500

425

20 350

275

15 200

125

10 50
-50 -25 0 25 50 75 100 125 10 20 30 40 50 60 70 80 90 100

Temperature : Tj [℃] RT-Resistance : RRT [kΩ]

Figure 11. Soft Start Time vs Temperature Figure 12. Switching Frequency vs RT-Resistance

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Typical Performance Curves (Application)

VIN = 7 V VIN = 12 V VIN = 7 V VIN = 12 V

VIN = 24 V VIN = 36 V VIN = 24 V VIN = 36 V
VIN = 48 V VIN = 60 V VIN = 48 V VIN = 60 V

Figure 13. Efficiency vs Output Current Figure 14. Efficiency vs Output Current
（VOUT = 5.0 V, fOSC = 100 kHz） （VOUT = 5.0 V, fOSC = 200 kHz）

VIN = 7 V VIN = 12 V VIN = 7 V VIN = 12 V

VIN = 24 V VIN = 36 V VIN = 24 V VIN = 36 V
VIN = 48 V VIN = 60 V VIN = 48 V VIN = 60 V

Figure 15. Output Voltage Deviation vs Output Current Figure 16. Output Voltage Deviation vs Output Current
(Load Regulation, VOUT = 5 V, fOSC = 100 kHz) (Load Regulation VOUT = 5 V, fOSC = 200 kHz)

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Typical Performance Curves (Application) - continued

VIN : 30 V/div
VIN : 30 V/div

VOUT : 2 V/div

VOUT : 2 V/div

VSW : 30 V/div

VSW : 30 V/div

Time : 10 ms/div Time : 10 ms/div

Figure 17. Start-up Waveform Figure 18. Shutdown Waveform

(VIN = VEN, VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0 A) (VIN = VEN, VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0 A)

VIN : 30 V/div VIN : 30 V/div

VOUT : 2 V/div

VOUT : 2 V/div

VSW : 30 V/div

VSW : 30 V/div

Time : 10 ms/div Time : 10 ms/div

Figure 19. Start-up Waveform Figure 20. Shutdown Waveform

(VIN = VEN, VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 5 A) (VIN = VEN, VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 5 A)

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Typical Performance Curves (Application) - continued

VOUT : 50 mV/div
VIN : 500 mV/div

Time : 0.2 ms/div Time : 0.2 ms/div

VSW : 30 V/div VSW : 30 V/div

Figure 21. VIN Ripple Figure 22. VOUT Ripple

(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0 A) (VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0 A)

VIN : 500 mV/div VOUT : 50 mV/div

Time : 10 µs/div Time : 10 µs/div

VSW : 30 V/div VSW : 30 V/div

Figure 23. VIN Ripple Figure 24. VOUT Ripple

(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0.3 A) (VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0.3 A)

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Typical Performance Curves (Application) - continued

VIN : 500 mV/div VOUT : 50 mV/div

Time : 5 µs/div Time : 5 µs/div

VSW : 30 V/div VSW : 30 V/div

Figure 25. VIN Ripple Figure 26. VOUT Ripple

(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 5 A) (VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 5 A)

VSW : 5 V/div VSW : 20 V/div

Time : 10 ms/div Time : 10 ms/div

IL : 5 A/div IL : 5 A/div

Figure 27. Switching Waveform Figure 28. Switching Waveform

(VIN = 12 V, VOUT = 5 V, fOSC = 200 kHz, VOUT short to GND) (VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, VOUT short to GND)

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Typical Performance Curves (Application) - continued

Operating Range: Tj < 150 °C Operating Range: Tj < 150 °C

Figure 29. Temperature vs Output Current Figure 30. Temperature vs Output Current
(VIN = 48 V, VOUT = 5 V, ROHM Board ) (VIN = 48 V, VOUT = 12 V, ROHM Board )

IOUT = 1 A

IOUT = 3 A

IOUT = 5 A

Figure 31. Maximum Duty Ratio vs Switching Frequency

（VIN = 12 V）

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Function Description

Enable Control
The IC shutdown can be controlled by the voltage applied to the EN pin. When the EN pin voltage reaches 2.5 V
(Min), the internal circuit is activated and the IC starts up. When EN pin voltage becomes 0.4 V (Max) , the device is
shutdown. To enable shutdown control with the EN Pin, set the shutdown interval (Low level interval of EN) must be
set to 100 µs or more.

VEN

EN Pin VENH
VENL
0 t

VOUT

Output Voltage VOUT×0.95

0 t

tSS

Figure 32. Timing Chart with Enable Control

Protective Functions
The protective circuits are intended for prevention of damage caused by unexpected accidents.
Do not use them for continuous protective operation.

2.1 Over Current Protection (OCP)

Current flowing in High-Side MOSFET is controlled one cycle when over current occurs. If OCP function 4 times
sequentially, the device stops the operation for 20 ms (Typ) and subsequently initiates a restart.

Soft Start
20 ms (Typ)
VOUT

VOUT × 0.95

SW LOW

< 4 times 4 times sequentially

IC internal
OCP signal LOW

OCP Threshold
8 A(Typ)

Inductor
Current

IC internal
SCP signal 20 ms (Typ)
SCP reset

Figure 33. Over Current Protection Timing Chart

Figure 42. Over Current Protection Timing Chart

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2. Protective Functions - coutinued

2.2 Under Voltage Lockout Protection Function (UVLO)

This is under voltage lockout block. It shuts down the device when the VIN pin voltage falls to 6.4 V (Typ) or less.
The UVLO threshold voltage has a hysteresis of 200 mV (Typ).

VIN
UVLO UVLO
ON OFF

hys
0V

VOUT
VOUT×0.95

Soft Start

Normal operation UVLO Normal operation

Figure 34. UVLO Timing Chart

2.3 Over Voltage Discharge Function (OVDIS)

When the FB pin voltage is 1.0 V (Typ) or more and 2.0 V (Typ) or less and remains in that state for 16 cycle, the
Discharge MOS On-time is set to 400 ns (Typ) and discharge output voltage.

16/fOSC (Typ)

VFB
Reference Voltage
1.0 V(Typ)
OVDIS
IOUT
(Over Voltage Discharge)

Discharge MOS
GATE
100 ns(Typ) 400 ns(Typ)

Figure 35. OVDIS Timing Chart

2.4 Over Voltage Protection Function (OVP)

When the FB pin voltage is 1.2 V (Typ) or more, it turns High-Side MOSFET OFF. After FB pin voltage drops, it
returns to normal operation with hysteresis. This IC has Discharge MOS. This MOS turns on 100 ns (Typ) at each
duty cycle. When the FB pin voltage is 2.0 V (Typ) or more, it turns Discharge MOS off also.

2.5 Thermal Shutdown Function (TSD)

This is the thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC’s power dissipation rating. However, if the rating is exceeded for a continued period and the junction
temperature (Tj) rises to 175 °C (Typ) or more, the TSD circuit will operate and turn OFF the output MOSFET.
When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that
the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC
from heat damage.

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Application Examples

1 VOUT = 5.0 V

Table 1. Specification of Application

Parameter Symbol Specification Value
Input Voltage VIN 7 V ～ 48 V
Output Voltage VOUT 5.0 V
Switching Frequency fOSC 200 kHz (Typ)
Maximum Output Current IOUTMAX 5A
VOUT_S
VOUT_F L1 C3
R5
VIN_S
C7 RS U1
C6
1 8 VIN_F
D1 SW VIN
CS C9 C4 C5
2 GND 7
BOOT
C1
GND_F 3 6
COMP EN EN
GND_S R1
R6 C2 5
4 FB GND_F
RT
R2 GND_S
BD9G500EFJ-LA
R4
R3

C10

Figure 36. Application Circuit

Table 2. Recommended Component Values(Note 1) (VOUT = 5.0 V)

Part No. Value Part Name Manufacturer
C4 (Note 2)
15 µF / 100 V KRM55WR72A156MH01L MURATA
C9(Note 3) 1 µF / 100 V GRM21BC72A105KE01L MURATA
C3 (Note 4)
1 µF / 10 V GRM155C71A105KE11D MURATA
C2 6800 pF / 50 V GRM1555C1H682JE01D MURATA
C6 47 µF / 25 V KRM55WR71E476MH01L MURATA
C7 220 µF / 50 V Aluminum UBT1H221M NICHICON
R1 62 kΩ MCR03 series ROHM
R2 0.75 kΩ MCR03 series ROHM
R3 3 kΩ MCR03 series ROHM
R4 47 kΩ MCR03 series ROHM
R5 0Ω MCR03 series ROHM
R6 0Ω MCR03 series ROHM
STPS15H100C ST
D1 100 V / 10 A
RB088BM100TL ROHM
L1 33 µH 7443551331 WURTH

(Note 1) These recommended component values for small output voltage ripple and improved transient response setting, please confirm on the actual equipment
considering variations of the characteristics of the product and external components. Component not in table all for open conditions
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum value of
no less than 4.7 μF.
(Note 3) In order to reduce the influence of high frequency noise, connect a 1 μF ceramic capacitor as close as possible to the VIN pin and the GND pin.
(Note 4) For the bootstrap capacitor C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no
less than 0.047 μF.

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1 VOUT = 5.0 V – continued

VIN = 7 V VIN = 12 V
VIN = 24 V VIN = 36 V
VIN = 48 V VIN = 60 V

Figure 37. Efficiency vs Output Current Figure 38. Frequency Characteristics

( IOUT = 5.0 A )

Time: 0.2 ms/div Time: 5 µs/div

VOUT: 50 mV/div VOUT: 50 mV/div

VSW: 30 V/div VSW: 30 V/div

Figure 39. VOUT Ripple Figure 40. VOUT Ripple

( IOUT = 0 A ) ( IOUT = 5.0 A )

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1 VOUT = 5.0 V – continued

Time: 0.1 ms/div Time: 0.1 ms/div

VOUT: 200 mV/div VOUT: 200 mV/div

IOUT: 1 A/div IOUT: 1 A/div

Figure 41. Load Transient Response Figure 42. Load Transient Response
( IOUT = 1.25 A – 3.75 A ) ( IOUT = 0 A – 3.75 A )

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Application Examples - coutinued

2 VOUT = 3.3 V

Table 3. Specification of Application

Parameter Symbol Specification Value
Input Voltage VIN 7 V ～ 36 V
Output Voltage VOUT 3.3 V
Switching Frequency fOSC 200 kHz (Typ)
Maximum Output Current IOUTMAX 5A

VOUT_S
VOUT_F L1 C3
R5
VIN_S
C7 RS U1
C6
1 8 VIN_F
D1 SW VIN
CS C9 C4 C5
2 GND 7
BOOT
C1
GND_F 3 6
COMP EN EN
GND_S R1
R6 C2 5
4 FB GND_F
RT
R2 GND_S
BD9G500EFJ-LA
R4
R3

C10

Figure 43. Application Circuit

Table 4. Recommended Component Values(Note 1) ( VOUT = 3.3 V )

Part No. Value Part Name Manufacturer
C4 (Note 2)
15 µF / 100 V KRM55WR72A156MH01L MURATA
C9(Note 3) 1 µF / 100 V GRM21BC72A105KE01L MURATA
C3(Note 4) 1 µF / 10 V GRM155C71A105KE11D MURATA
C2 6800 pF / 50 V GRM1555C1H682JE01D MURATA
C6 47 µF / 25 V KRM55WR71E476MH01L MURATA
C7 220 µF / 50 V Aluminum UBT1H221M NICHICON
R1 43 kΩ MCR03 series ROHM
R2 2.7 kΩ MCR03 series ROHM
R3 6.2 kΩ MCR03 series ROHM
R4 47 kΩ MCR03 series ROHM
R5 0Ω MCR03 series ROHM
R6 10 Ω MCR03 series ROHM
STPS15H100C ST
D1 100 V / 10 A
RB088BM100TL ROHM
L1 33 µH 7443551331 WURTH
(Note 1) These recommended component values for small output voltage ripple and improved transient response setting, please confirm on the actual equipment
considering variations of the characteristics of the product and external components. Component not in table all for open conditions
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum value of
no less than 4.7 μF.
(Note 3) In order to reduce the influence of high frequency noise, connect a 1 μF ceramic capacitor as close as possible to the VIN pin and the GND pin.
(Note 4) For the bootstrap capacitor C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no
less than 0.047 μF.

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2 VOUT = 3.3 V – continued

VIN = 7 V VIN = 12 V

VIN = 24 V VIN = 36 V

Figure 44. Efficiency vs Output Current Figure 45. Frequency Characteristics IOUT = 5.0 A

Time: 0.2 ms/div Time: 5 µs/div

VOUT: 50 mV/div
VOUT: 50 mV/div

VSW: 30 V/div VSW: 30 V/div

Figure 46. VOUT Ripple Figure 47. VOUT Ripple

( IOUT = 0 A ) ( IOUT = 5.0 A )

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2 VOUT = 3.3 V – continued

Time: 0.1 ms/div Time: 0.1 ms/div

VOUT: 200 mV/div VOUT: 200 mV/div

IOUT: 1 A/div IOUT: 1 A/div

Figure 48. Load Transient Response Figure 49. Load Transient Response
(VIN = 36 V, IOUT = 1.25 A – 3.75 A ) (VIN = 36 V, IOUT = 0 A – 3.75 A )

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Application Examples - coutinued

3 VOUT = 12 V

Table 5. Specification of Application

Parameter Symbol Specification Value
Input Voltage VIN 18 V ～ 60 V
Output Voltage VOUT 12 V
Switching Frequency fOSC 200 kHz (Typ)
Maximum Output Current IOUTMAX 5A

VOUT_S
VOUT_F L1 C3
R5
VIN_S
C7 RS U1
C6
1 8 VIN_F
D1 SW VIN
CS C9 C4 C5
2 GND 7
BOOT
C1
GND_F 3 6
COMP EN EN
GND_S R1
R6 C2 5
4 FB GND_F
RT
R2 GND_S
BD9G500EFJ-LA
R4
R3

C10

Figure 50. Application Circuit

Table 6. Recommended Component Values(Note 1) (VOUT = 12 V)

Part No. Value Part Name Manufacturer
C4(Note 2) 15 µF / 100 V KRM55WR72A156MH01L MURATA
C9(Note 3) 1 µF / 100 V GRM21BC72A105KE01L MURATA
C3(Note 4) 1 µF / 10 V GRM155C71A105KE11D MURATA
C2 6800 pF / 50 V GRM1555C1H682JE01D MURATA
C6 47 µF / 25 V KRM55WR7YA476MH01L MURATA
C7 220 µF / 50 V Aluminum UBT1H221M NICHICON
R1 150 kΩ MCR03 series ROHM
R2 0.3 kΩ MCR03 series ROHM
R3 3.3 kΩ MCR03 series ROHM
R4 47 kΩ MCR03 series ROHM
R5 0Ω MCR03 series ROHM
R6 0Ω MCR03 series ROHM
STPS15H100C ST
D1 100 V / 10 A
RB088BM100TL ROHM
L1 33 µH 7443551331 WURTH
(Note 1) These recommended component values for small output voltage ripple and improved transient response setting, please confirm on the actual equipment
considering variations of the characteristics of the product and external components. Component not in table all for open conditions
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum value of
no less than 4.7 μF.
(Note 3) In order to reduce the influence of high frequency noise, connect a 1 μF ceramic capacitor as close as possible to the VIN pin and the GND pin.
(Note 4) For the bootstrap capacitor C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no
less than 0.047 μF.

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3 VOUT = 12 V – continued

VIN = 18 V VIN = 24 V
VIN = 36 V VIN = 48 V
VIN = 55 V VIN = 60 V

Figure 51. Efficiency vs Output Current Figure 52. Frequency Characteristics

( IOUT = 5.0 A )

Time: 0.2 ms/div Time: 5 µs/div

VOUT: 50 mV/div

VOUT: 100 mV/div

VSW: 30 V/div VSW: 30 V/div

Figure 53. VOUT Ripple Figure 54. VOUT Ripple

( IOUT = 0 A ) ( IOUT = 5.0 A )

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3 VOUT = 12 V – continued

Time: 0.5 ms/div Time: 0.5 ms/div

VOUT: 200 mV/div VOUT: 200 mV/div

IOUT: 1 A/div IOUT: 1 A/div

Figure 55. Load Transient Response Figure 56. Load Transient Response
( IOUT = 1.25 A – 3.75 A ) ( IOUT = 0 A – 3.75 A )

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Selection of Components Externally

Contact us if not use the recommended component values in Application Examples.

1. Switching Frequency
BD9G500EFJ-LA can setup arbitrary internal oscillator frequency by connecting RT resistance. Recommended
frequency setting range is 100 kHz to 650 kHz, For setting frequency f OSC [kHz] , RRT [kΩ], That can be used is
calculated as follows. When RRT (kΩ) = 47 kΩ the frequency closed to 200 kHz (Typ) operation.

18423
𝑅𝑅𝑇 (𝑘𝛺) =
𝑓𝑂𝑆𝐶 (𝑘𝐻𝑧)1.127
6093.5
𝑓𝑂𝑆𝐶 (𝑘𝐻𝑧) =
𝑅𝑅𝑇 (𝑘𝛺)0.887

Figure 57. Switching Frequency vs RT-Resistance Figure 58. RT-Resistance vs Switching Frequency

2. Output LC Filter
The DC/DC converter requires an LC filter for smoothing the output voltage in order to supply a continuous current to
the load. Selecting an inductor with a large inductance causes the ripple current ΔIL that flows into the inductor to be
small, decreasing the ripple voltage generated in the output voltage, but it is not advantageous in terms of the load
transient response characteristic. Selecting an inductor with a small inductance improves the transient response
characteristic but causes the inductor ripple current to be large, which increases the ripple voltage in the output voltage,
showing a trade-off relationship.

IL

Inductor saturation current > IOUTMAX + ∆IL/2

∆IL

Maximum Output Current IOUTMAX

Figure 59. Waveform of Inductor Current

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2. Output LC Filter – Connected

Computation ∆IL. with VIN = 48 V, VOUT = 5 V, L = 33 µH, and switching frequency fOSC = 200 kHz, the method is as
below.

1
∆𝐼𝐿 = 𝑉𝑂𝑈𝑇 × (𝑉𝐼𝑁 − 𝑉𝑂𝑈𝑇 ) × = 679 [mA]
𝑉𝐼𝑁 × 𝑓𝑂𝑆𝐶 × 𝐿
Also for saturation current of inductor, select the one with larger current than the total of maximum output current and
1/2 of inductor ripple current ∆[Link] capacitor COUT affects output ripple voltage characteristics. Select output
capacitor COUT so that necessary ripple voltage characteristics are satisfied.

Output ripple voltage can be expressed in the following method.

1
∆𝑉𝑅𝑃𝐿 = ∆𝐼𝐿 × (𝑅𝐸𝑆𝑅 + ) [V]
8 × 𝐶𝑂𝑈𝑇 × 𝑓𝑂𝑆𝐶
RESR is the serial equivalent series resistance here.
With COUT = 267 µF, RESR = 30 mΩ the output ripple voltage is calculated as below.

1
∆𝑉𝑅𝑃𝐿 = 0.679 × (30𝑚𝛺 + ) = 21.96 [mV]
8 × 267𝜇 × 200𝑘

Be careful of total capacitance value, when additional capacitor C LOAD is connected to output capacitor COUT.
Use maximum additional capacitor CLOAD (Max) condition which satisfies the following method.
Maximum starting inductor ripple current IL_START must smaller than over current limit 6.4 A (Min).

Maximum starting inductor ripple current IL_START can be expressed in the following method.

∆𝐼𝐿
𝐼𝐿_𝑆𝑇𝐴𝑅𝑇 = 𝐼𝑂𝑈𝑇𝑀𝐴𝑋 + ( ) + 𝐼𝐶𝐴𝑃 [A]
2
Charge current to output capacitor ICAP can be expressed in the following method.

(𝐶𝑂𝑈𝑇 + 𝐶𝐿𝑂𝐴𝐷 ) × 𝑉𝑂𝑈𝑇

𝐼𝐶𝐴𝑃 = [A]
𝑡𝑆𝑆
Computation with VIN = 48 V, VOUT = 5 V, L = 33 µH, IOUTMAX = 5 A (Max), switching frequency fOSC = 180 kHz (Min),
Output capacitor COUT = 267 µF, Soft Start Time tSS = 15 ms (Min), the method is as below.

∆𝐼
(6.4 − 𝐼𝑂𝑈𝑇𝑀𝐴𝑋 − 2𝐿 ) × 𝑡𝑆𝑆
𝐶𝐿𝑂𝐴𝐷 (𝑀𝑎𝑥) ≤ − 𝐶𝑂𝑈𝑇 = 2801 [µF]
𝑉𝑂𝑈𝑇
3. Catch Diode
BD9G500EFJ-LA should be taken to connect external catch diode between the SW pin and the GND pin. The diode
require adherence to absolute maximum ratings of application. Opposite direction voltage should be higher than
maximum voltage of the VIN pin. Also for saturation current of diode, select the one with larger current than the total
of maximum output current and 1/2 of inductor ripple current ∆IL.

4. Bootstrap capacitor
Bootstrap capacitor C3 shall be 1 μF. Connect a bootstrap capacitor between the SW pin and the BOOT pin.
For capacitance of Bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into
consideration to set minimum value to no less than 0.047 μF.

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Selection of Components Externally – Connected

5. Output Voltage Set Point
The output voltage value can be set by the feedback resistance ratio.

𝑅6 + 𝑅2 + 𝑅3
𝑉𝑂𝑈𝑇 = [V] VOUT

𝑅2
R6

R3

FB ERR

R2
1.0V

Figure 60. Feedback Resistor Circuit

6. Input capacitor configuration

For input capacitor, use a ceramic capacitor. For normal setting, 15 μF is recommended, but with larger value, input
ripple voltage can be further reduced. Also, for capacitance of input capacitor, take temperature characteristics, DC
bias characteristics, etc. into consideration to set minimum value to no less than 4.7 μF.

7. Phase Compensation
A current mode control buck DC/DC converter is a two-pole, one-zero system. Two-pole formed by an error amplifier
and load and one zero point added by phase compensation. The phase compensation resistor R1 determines the
crossover frequency fCRS where the total loop gain of the DC/DC converter is 0 dB. High value for this crossover
frequency fCRS provides a good load transient response characteristic but inferior stability. Conversely, specifying a
low value for the crossover frequency fCRS greatly stabilizes the characteristics but the load transient response
characteristic is impaired.

7.1 Selection of Phase Compensation Resistor R1

The phase compensation resistance R1 can be determined by using the following equation.

2 × 𝜋 × 𝑉𝑂𝑈𝑇 × 𝑓𝐶𝑅𝑆 × 𝐶𝑂𝑈𝑇

𝑅1 = [Ω]
𝑉𝐹𝐵 × 𝐺𝑀𝑃 × 𝐺𝑀𝐴
Where:
VOUT is the output voltage
fCRS is the crossover frequency
COUT is the output capacitance
VFB is the feedback reference voltage (1.0 V (Typ))
GMP is the current sense gain (14 A / V (Typ))
GMA is the error amplifier transconductance (200 µA/V (Typ))

7.2 Selection of phase compensation capacitance C2

For stable operation of the DC/DC converter, inserting a zero point under 1/9 of the zero crossover frequency
cancels the phase delay due to the pole formed by the load often provides favorable characteristics.
The phase compensation capacitance C2 can be determined by using the following equation.
1
𝐶2 = [F]
2 × 𝜋 × 𝑅1 × 𝑓𝑍
Where:fz is Zero point inserted

7.3 Loop stability

In order to secure stability of DC/DC converter, confirm there is enough phase margin on actual equipment.
Under the worst condition, it is recommended to secure phase margin more than 45°.
In practice, the characteristics may vary depending on PCB layout, routing of wiring, types of parts to use and
operating environments (temperature, etc.).
Use gain-phase analyzer or FRA to confirm frequency characteristics on actual equipment. Contact the
manufacturer of each measuring equipment to check its measuring method, etc.

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PCB Layout Design

PCB layout design for DC/DC converter power supply IC is as important as the circuit design. Appropriate layout can avoid
various problems caused by power supply circuit. Figure 66-a to 66-c show the current path in a buck DC/DC converter circuit.
The Loop1 in Figure 66-a is a current path when High Side switch is ON, the Loop2 in Figure 66-b is when High Side switch
is OFF. The thick line in Figure 66-c shows the difference between Loop1 and Loop2. The current in thick line changes sharply
each time the switching element change from OFF to ON, and vice versa. These sharp changes induce several harmonics
in the waveform. Therefore, the loop area of thick line that is consisted by input capacitor and IC should be as small as
possible to minimize noise. For more detail, refer to application note of switching regulator series “PCB Layout Techniques of
Buck Converter”.

Loop1
VIN VOUT
L
High Side switch
CIN COUT

GND GND

Figure 61-a. Current path when High Side switch = ON

VIN VOUT
L
High Side switch
CIN COUT
Loop2

GND GND

Figure 61-b. Current Path when High Side switch = OFF

VIN VOUT
L
CIN High Side FET COUT

GND GND

Figure 61-c. Difference of Current and Critical Area in Layout

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PCB Layout Design - continued

Accordingly, design the PCB layout with particular attention paid to the following points.

·Provide the input capacitor close to the VIN pin of the IC as possible on the same plane as the IC.
·If there is any unused area on the PCB, provide a copper foil plane for the ground node to assist heat dissipation from the IC
and the surrounding components.
·Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Trace to the coil and catch diode
as thick and short as possible.
·Provide lines connected to the FB pin and the COMP pin as far from the SW node.
·Provide the output capacitor away from the input capacitor in order to avoid the effect of harmonic noise from the input.

Top Layer Bottom Layer

Figure 62. Example of Sample Board Layout Pattern

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I/O Equivalence Circuit

1. SW 7. BOOT 3. COMP
BOOTREG VREG

BOOT
VIN

SW COMP

GND
GND GND GND
4. FB 5. RT

FB

RT

GND

GND GND

6. EN

EN

GND GND

GND

GND GND

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Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.

3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.

4. Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5. Recommended Operating Conditions

The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.

6. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring,
and routing of connections.

7. Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.

8. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result
in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.

9. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.

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Operational Notes – continued

10. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.

Resistor Transistor (NPN)

Pin A Pin B B Pin B
C
Pin A E

P B C
P+ P+ P+ N P P+
N N N N Parasitic N N N
E
Elements
Parasitic
P Substrate P Substrate
Elements
GND GND GND GND
Parasitic Parasitic N Region
Elements Elements close-by

Figure 63. Example of Monolithic IC Structure

11. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.

12. Thermal Shutdown Circuit (TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.

13. Over Current Protection Circuit (OCP)

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.

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Ordering Information

B D 9 G 5 0 0 E F J - LAE2

Package Product Class

EFJ: HTSOP-J8 LA: For Industrial Applications
Packaging and forming specification
E2: Embossed tape and reel

Marking Diagram

HTSOP-J8 (TOP VIEW)

Part Number Marking

D 9 G 5 0 0
LOT Number

Pin 1 Mark

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Physical Dimension and Packing Information

Package Name HTSOP-J8

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Revision History
Date Revision Changes
[Link].2020 001 New Release

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 Notice
Precaution on using ROHM Products
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅡb
CLASSⅢ CLASSⅢ
CLASSⅣ CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PAA-E Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.

Notice-PAA-E Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
 Datasheet

General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.

3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or
concerning such information.

Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.