Understanding Ideal Diodes and Semiconductors
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ScribdTranslationsUnderstanding Ideal Diodes and Semiconductors
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Questions
IDEAL DIODE
[Link] in your own words the meaning of the word ideal
It applies to a device or system.
An ideal device or system is one that has the characteristics I would prefer.
when a device or system is used in a practical application.
Normally, however, technology only allows a replica close to the
desired characteristic crops. The ideal characteristics of an excellent basis
for the comparison with the characteristics of the real device that allows a
estimation of how well the device or system can be expected to obtain
a good estimation of the global response of the design. When assuming a device
ideal or the system does not have any consideration for the component or
manufacturing tolerances or any variation from one device to another of a
specific batch.
2. describe in your own words the characteristics of an ideal diode and
how the states of 'on' and 'off' of the device are determined.
That is, describe why the circuit equivalents are suitable.
closed and open circuit.
3. What is the main difference between the characteristics of a switch?
simple and those of the ideal diode?
The most important difference between the characteristics of a diode and the
A simple switch is that the switch, whether mechanical, is capable of conducting the
current in any direction, while the diode only allows the charge
of thought flow the element in one direction (specifically, the
direction defined by the arrow of the symbol with the current flow
conventional)
SEMICONDUCTOR MATERIAL
4. con sus propias palabras, defina los términos semiconductor, resistividad,
volume resistance and ohmic contact resistance.
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SemiconductorUnsemiconductors onesubstancethat behaves like
conductoror howinsulatordepending on the ambient temperature in
whoever is found.
Resistivity:Resistivity is called the degree of difficulty they find
the electrons in their displacements.
Volume resistance:
Ohmic resistance:
4.(a) using table 1.1, determine the resistance of a silicon sample
with an area of 1 cm2and a length of 3 cm.
ρ=50X1000Ω.cm
R = ρlA = 50 x 1000 Ω.cm (3cm/1cm2)=150KΏ
(b) Repeat part (a) if now the length is 1cm and the area is 4cm.2.
R=ρlA=50X1000Ω.cm(1cm/4cm2)=12.5KΦ
(c) Repeat item (a) if now the length is 8cm and the area is 0.5cm2.
R=ρlA=50X1000Ω.cm(8cm/0.5cm2)= 800KΏ
(d) Repeat item (a) for the case of copper and compare the results.
R = ρlA = 0.000001 cm (3 cm / 1 cm2=3μΏ
6. Draw the atomic structure of copper and discuss why it is a good
conductor and how its structure is different from that of germanium and silicon.
Copper (valence 1), which is a good conductor. Its atomic structure is seen in the
next figure.
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As the valence electron is weakly attracted to the inner part, a force
external can easily release it, that's why it is a good conductor. We will refer to that
valence electron, as a free electron.
What defines a good conductor is the fact that it has a single electron in its orbit.
Valencia (Valencia 1).
7. in your own words, define intrinsic material, a coefficient of
negative temperature and a covalent bond.
Intrinsic material: an intrinsic semiconductor is one that has been refined to be
as pure as physically possible. One with the least possible number of impurities.
Materials with negative temperature coefficients: with temperature coefficients
Negatives decrease resistance levels as temperature increases.
The covalent bond: the covalent bond is the exchange of electrons between the
neighboring atoms based on completing outer shells and a more lattice-like structure
stable
8. consult your library and locate three materials that have coefficients of
negative temperature and three with positive temperature coefficients.
relative resistivity Temperature Coefficient
metal (Cu = 1) a (20° C)
Aluminum 1.63 + 0.004
Copper 1.00 + 0.0039
Constantan 28.45 ± 0.0000022
Karma 77.10 ± 0.0000002
Manganese 26.20 ± 0.0000002
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Chromium-Nickel 65.00 +/- 0.0004
Silver 0.94 + 0.0038
EXTRINSIC MATERIALS TYPE n AND TYPE p
9. Describe the differences between n-type and p-type semiconductor materials.
An N-type semiconductor is obtained by carrying out a process ofcaught
adding a certain type of atoms to the semiconductor to be able to
increase the number ofcargo carriersfree (in this case negative or
electrons).
The purpose of thetype n dopingit is to produce an abundance of electrons
carriers in the material
A P-type Semiconductor is obtained by carrying out a process ofhit,
adding a certain type of atoms to the semiconductor in order to increase
the number of free charge carriers (in this case positive or holes).
The purpose of thedopingType P is the one of creating an abundance of gaps.
10. Describe the differences between donor and acceptor impurities.
A donor atom has five electrons in its outermost valence shell.
while a receiving atom only has 3 electrons in the valence shell.
11. describe the differences between majority carriers and minority carriers.
In semiconductors, electrons and holes act as the
cargo carriers. The most abundant are called carriers
majority. In then-type semiconductorsthey are theelectrons, and in the
P-type semiconductorsthey are the gaps. The burden carriers less
abundant are called minority carriers; in type semiconductors
In semiconductors, the holes are the vacancies and in type P semiconductors, they are the electrons.
12. draw the atomic structure of silicon and insert an arsenic impurity as
it was demonstrated in the case of silicon in figure 1.9.
As arsenic has a valence of 5, it releases one electron as noted in the
graph. thus at not very high temperature (at room temperature for example),
the 5th electron becomes a free electron. That is, since only 8 electrons can be held in
the orbit of valencia, the pentavalent atom releases an electron that will be free
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13. Repeat problem 12 but now insert an indium impurity.
For the indium (In), its valence is 3, it has one electron less, so we are lacking
a trivalent atom has 7 electrons in the hole. That is, this trivalent atom has 7 electrons in the
valence orbit. An atom with a valence of 3 is called a 'trivalent atom' or 'Acceptor'.
14. consult your library and find another explanation for the flow of gaps
versus that of electrons using both descriptions, write in your own
words the process of driving holes.
|
. ______|______
. | | \
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. | COLECTOR N | |
. |_____________| Shiny conductive metal
. | | |
. BASE P |-- /
. |_____________|
. crystalline exhaustion layer
. | | \
. EMITTER N Shiny conductive metal
. |_____________| /
. |
. |
If a positive voltage is applied to the P type through the Base wire, while a voltage
(-) is applied to type N through the Emission cable, the electrons in type N are
pushed into the gaps in type P. The insulation layer becomes
so fine that the clouds of electrons and holes begin to be seen and
Combine. A current then exists in the Base-Collector circuit. But
this current is not important for the action of the transistor. What is
It is important to note that it is the *VOLTAGE* across the Base-Emitter that...
causes the thinning of the depletion layer until the charges
they can flow through it. This is as if the transistor
It contains a glass layer whose thickness can vary by changing the voltage.
The layer becomes thinner as the voltage is increased. This happens
because the voltage pushes electrons and holes against each other,
reducing the size of the insulating region between the hole clouds and
electrons, allowing the passage of some. The depletion layer is a
voltage-controlled switch, which closes the circuit when the correct
polarity is applied.
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