Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD325
DESCRIPTION ·
·With TO-220C package
·Complement to type 2SB511
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 35 V
VCEO Collector-emitter voltage Open base 35 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 1.5 A
ICM Collector current -peak 3.0 A
Ta=25℃ 1.75
PC Collector dissipation W
TC=25℃ 10
Tj Junction temperature 150 ℃
Tstg Storage temperature -50~150 ℃
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD325
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 35 V
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A 1.0 V
VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V
ICBO Collector cut-off current VCB=20V; IE=0 0.1 mA
IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA
hFE-1 DC current gain IC=1A ; VCE=2V 40 320
hFE-2 DC current gain IC=0.1A ; VCE=2V 35
fT Transition frequency IC=0.5A ; VCE=5V 8 MHz
hFE-1 Classifications
C D E F
40-80 60-120 100-200 160-320
2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD325
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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