MODULE 4: TRANSISTORS
1. Bipolar Junction Transistor (BJT)
What is a BJT?
A Bipolar Junction Transistor (BJT) is a three-terminal semiconductor device that consists of two p-n
junctions and are able to amplify or magnify a signal. A BJT is a current controlled device. A bipolar
junction transistor has three terminals: emitter, base and collector. A junction transistor uses both
electrons and holes as charge carriers.
A BJT is made up of three layers of semiconductor material:
Emitter (E): Heavily doped to increase the number of charge carriers.
Base (B): Lightly doped and thin. It controls the flow of charge carriers between the emitter
and the collector.
Collector (C): Moderately doped. It collects the charge carriers from the emitter.
BJTs are classified into two types:
NPN Transistor: The emitter is n-type, and the base and collector are p-type.
PNP Transistor: The emitter is p-type, and the base and collector are n-type.
Working of BJT:
Base-Emitter Junction: Forward biased.
Collector-Base Junction: Reverse biased.
When a small current is applied to the base (Ib), a larger current flows from the emitter to the
collector (Ic). The transistor amplifies the input signal by controlling a larger current with a smaller
one.
Current Gain (β):
The current gain of a transistor is the ratio of the collector current (Ic) to the base current (Ib).
Applications of BJT:
Amplification of weak signals.
Switching applications in digital circuits.
Radio frequency amplification.
2. Common Transistor Configurations
Common Emitter Configuration:
Input: Applied between base and emitter.
Output: Taken between collector and emitter.
Characteristics: High current and voltage gain, but output is inverted.
Applications: Used in amplifier circuits.
Common Base Configuration:
Input: Applied between emitter and base.
Output: Taken between collector and base.
Characteristics: High voltage gain, no current gain, and the output is in phase with the input.
Applications: Used for impedance matching and high-frequency applications.
Common Collector Configuration:
Input: Applied between base and collector.
Output: Taken from the emitter.
Characteristics: High current gain but low voltage gain, and the output is in phase with the
input.
Applications: Used in voltage buffering and impedance matching.
3. Unipolar Devices: FETs and MOSFETs
Field-Effect Transistor (FET):
Operation: FETs are voltage-controlled devices. The electric field produced by the voltage at the gate
terminal controls the current flow through the channel between the source and drain terminals.
Types of FET:
JFET (Junction FET): The gate is reverse biased.
MOSFET (Metal-Oxide-Semiconductor FET): The gate is insulated from the channel, offering
higher efficiency and better control over current flow.
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor):
MOSFETs are widely used in digital electronics and power control systems.
Types of MOSFET:
o n-channel MOSFET: Conducts when a positive voltage is applied to the gate.
o p-channel MOSFET: Conducts when a negative voltage is applied to the gate.
Applications: Power amplifiers, digital circuits, and high-speed switching.
5. Numerical Problem Solving
Numerical 1: Calculate Current Gain (β) in a BJT
Problem: Given a BJT with a base current of 10 µA and a collector current of 2 mA, calculate the
current gain (β).
Solution:
Numerical 2: Determine Collector Current in a BJT Circuit
Problem: In a common emitter configuration, if the base current (Ib) is 20 µA and the current gain
(β) is 150, calculate the collector current (Ic).
Solution:
Numerical 3: Calculate Drain Current (Id) in MOSFET
Problem: In an n-channel MOSFET, the gate-source voltage (Vgs) is 4V, the threshold voltage (Vth) is
1V, and the drain-source voltage (Vds) is 10V. Calculate the drain current (Id).
Solution: