Bahir Dar Institute of Technology

Bahir Dar University

Faculty of Electrical and Computer

Engineering

Eeng-5163: Power Electronics and Its

Application

Ahunim Abebe (PhD)

ahunim@[Link]
 Course Syllabus
Course Information: Eeng-5163 Power Electronics and Its Application (2,0,3)

Course Objectives: Learning Outcomes

• To understand power semiconductor devices and characteristics  Understanding &
• To understand power electronic converters and applications cognitive knowledge
• To get the knowledge about utility applications of power electronics  Practical skills
• To get basic understanding of power quality and improvements  Standards
 Team works and report
Chapter 1: Introduction to power electronics and applications
writing
– Introduction to power electronics and applications, Power electronic switching
devices, Power electronic circuits and applications, Power semiconductor
devices and switching characteristics
Chapter 2: Power electronic converters and applications
– Uncontrolled and controlled rectifiers: Basic terminologies; single and three
phase uncontrolled/controlled rectifiers
– AC voltage controllers: Single and three phase ac voltage controller; basics of
cyclo - converter
– DC-DC converters and applications: Types of Dc-Dc converters; multi-quadrant
operation of choppers
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10/8/2025 Power Electronics and Its Application 2
 Cont’d…
– DC-AC converters and application: Single phase square wave inverters; single phase PWM
inverters; three phase six-step inverters; multi-level voltage-sourced converter, three phase
PWM inverters; self- and line commutated current-sourced converters

• Chapter 3: Applications of power Electronics in Power systems

– Static reactive power compensation; FACTS concept and system consideration, Static
series compensators, static shunt compensators
– Power Electronics in Renewable Energy systems; PV systems, Wind power conversion
and integrations
– HVDC: HVDC system configuration and components conversion and inversion, Analysis
of three phase bridge converter, Control of HVDC system, Principle of DC link control,
current and Extinction angle control

Chapter 4: Other interfacing issues with utility

– Harmonics concepts, Generation and mitigation
– Electromagnetic interference
– Power quality and power factor; power quality monitoring and analysis, standards and
power quality measuring instruments

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10/8/2025 Power Electronics and Its Application 3
 Cont’d…
• Teaching-learning methods: Lecture, discussions, laboratory works and assignments
• References:
1. N. Mohan, T. M. Undeland and W. P. Robbins, Power Electronics: Converter, Applications
and Design, John Wiley and Sons, 2003.

2. M.H. Rashid, Power Electronics: Circuits, Devices, and Applications, 4th Edition, Pearson-
Prentice Hall, 2014

3. R. [Link] , Mark .F. Mc Granaghan, SuryaSantaso, H. Wayne Beaty, Electrical Power

Systems Quality, 2nd Ed Mc Graw Hill, 2002.

4. Arrillaga J., HVDC Transmission, 2nd Ed, IET, London, United Kingdom, 2008.
• Assessments:
 Quiz1 (Ch # 2): 5%
 Quiz2 (Ch # 3): 5%
 Lab report: 10%
 Assignment (Ch #2): 5%
 Mid exam (Ch# 1,2): 25%
 Final exam (Ch # 2-4): 50%

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10/8/2025 Power Electronics and Its Application 4
Eeng-5163: Power Electronics and Its Application
Ch#1: Introduction to Power Electronics
and Applications
 Outline
• Introduction to Power Electronics

• Application Areas of Power Electronics

• Power Electronics Switching Devices

• Power electronic circuits and applications

• Power semiconductor devices and switching

characteristics

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10/8/2025 Ch#1 6
 Introduction to Power Electronics
• Power Electronics: is the electronics applied to conversion, control
and conditioning of electric power
• Power Electronics systems can be considered as Electric Power Processor
SWITCHING
CONVERTER
Electric Electric
Power Power
Input Output
Control
Input
Input Output
Electric Power available
• Voltage level Electric Power at Desired
• Frequency • Voltage level
• Number of Phases • Frequency
• Phase angle between voltage and Current • Number of Phases
• Phase angle between voltage and Current
Control
Control with feedback and feed forward.
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10/8/2025 Introduction to Power Electronics 7
 Cont’d…
The power processing is effected by proper utilization (application of
Control, Computer Engineering, microelectronics, and power).

Power SWITCHING Power

Input CONVERTER Output
INTERFACE
ELECTROINCS
Feedforward Control
Input
Feedback
•Analogue Circuitry
CONTROLLER •Electronic devices
REFERENCE •Control Systems
•Power Systems
•Magnetics
•Electric machines
•Numerical Simulations
•Computers and microprocessors
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10/8/2025 Introduction to Power Electronics 8
 Cont’d…
Components Utilized are “lossless”
S
Switches
L
Electric Electric Inductors
Power 1:a Power
Capacitors
Input C Output
D
Vin, fin, Iin, Vout, fout,
phase Iout, phase

Control

Resistors usage to be avoided where ever possible.

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10/8/2025 Introduction to Power Electronics 9
 Cont’d…

IDEAL SWITCH When Switch is Open i (t )  0

Power _ loss  i (t )  v(t )  0
When Switch Closed v(t )  0
i(t)
+ Power _ loss  i (t )  v(t )  0

v(t) Blocks voltage in both polarity.

-
Conduct Current in both directions

Switch opens or closes instantly with no time

Power loss on ideal switch is zero.

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10/8/2025 Introduction to Power Electronics 10
 Cont’d…
Practical Components for Electric Power Conversion
Operation in Saturation and
cut-off region
i2 Saturation
V22 i18
R22 i17
C Linear region i16
Rc i15
L i14
i13
R i12
i1=0
V2 V22

Capacitors Inductors Switch Cut-off

Inductors and Capacitors have R L C

internal resistance. Switched
Linear Mode
Mode Solid
Solid-State
State
Device
Semiconductor devices operate in their Switches
saturation and cut-off regions with finite
resistance and pass through linear
during transition
10/8/2025 11
 Application Areas of Power Electronics
Home & office Industry Transportation
• Photocopiers • Grinders
• Process Control • Trains
• Power Supplies
• Induction Heating • Space Vehicles
• Uninterruptible • Machine Tools • Electric Vehicles
power Supplies • Motor Control
• Washing Machines • Pumps
• Power Factor
Utility
Controllers • Renewable Energies
• Solar Power
• Spindle Drives
• Wind Power
• Fans
• Sanders • Solid-state Relays

• Ventilating Equipment • Power line Conditioners

• Welders
• Servo systems

10/8/2025 12
 Cont’d…
• Range of Applications
– Fraction of a Watt
• Battery operated apparatus: Mobiles phones, Electronic watches,
etc.
– Tens, hundreds, up to thousands of Watts
• Electronic apparatus: Computers, office equipments, etc. as power
supplies, battery charger controllers, UPS, etc.
– Kilowatts up to Megawatt ranges
• Electric drives, Inverters, Converters, etc.
– Up to several Megawatts
• Electric Transmission Systems : Rectifiers and Inverters, FACTs,
HVDC, etc.
• Now a days, for better efficiency and control the Electric power generated is
processed by power electronics before being used
• In Ethiopia recent imported industrial systems are equipped with power
electronic components/converters. Inverters, motor soft-starters, automation
systems are some examples
• Therefore, one can work on design, operation, and maintenance of power
electronic systems in such a wide range of power electronics application.
10/8/2025 13
 Cont’d….
• Renewable Technologies: Wind Power Systems

Intermittent nature of Wind

• Variable voltage and frequency generation
• Inverter-Converter system is used to supply constant frequency and
constant voltage to load
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10/8/2025 Application of Power Electronics 14
 Cont’d….

DFIG
The stator of the wound type induction generator is
connected to utility grid.
• The rotor winding is fed from the grid through the
converter inverter set.
• The rotor supply is used to control the slip
frequency of induction motor depending on the
wind speed.
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10/8/2025 Application of Power Electronics 15
 Cont’d….

Frequency Converters interface the variable frequency the Wind

Turbine Generator (WTG) with the constant voltage and frequency
grid.
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10/8/2025 Application of Power Electronics 16
 Cont’d….

Adama Wind Farm frequency Converter

• Six-phase Permanent Magnet Generator

is with six phase converter inverter
system is used.

GRID
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10/8/2025 Application of Power Electronics 17
 Cont’d….
• Renewable Technologies: Solar Power Systems
Inverter and Peak Power Tracker

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10/8/2025 Application of Power Electronics 18
 Cont’d….
Power Electronics Application Solar Rural power Supplies

Solar panels convert sun shine to Electric Power .

• Most appliances are AC, hence inverters are used to convert the DC to AC
• The Energy is stored in battery for use during the night when there is no light.
Battery chargers are power converters.
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10/8/2025 Application of Power Electronics 19
 Cont’d….
• High Voltage Transmission System: HVDC Transmission
Electric Power Transmission Systems are Converted to DC for Long distance
transmission and then back to AC at load centers.

• Terminal Cost
• Transmission Cost
• Loss

• HVDC transmission cost and loss are low compared to the conventional
AC transmission system while terminal cost is high.
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10/8/2025 Application of Power Electronics 20
 Cont’d….
• High Voltage Transmission System: FACTS

Transmission Systems Stability, Maximum usage of lines, Efficiency of

transmission line, …FACTS

ABB STATCOM
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10/8/2025 Application of Power Electronics 21
 Cont’d….
• High Voltage Power Systems (networks)
Magnetically Controlled Reactors (MCR)
MCR controls reactive power and voltage levels in high voltage (HV)
electric networks

Magnetically Controlled Reactor (MCR)

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10/8/2025 Application of Power Electronics 22
 Cont’d….
• Power Electronics Application: Laptops

Display
Inverter
backlighting

Battery
Charger mprocessor
Buck Power
PWM
Converter managment
Rectifier

Boost
Lithium Disk driver
Converter
battery

 Socket Power Supply at 220 V is not directly used

 DC power supply required at different levels
• Disk driver: 12V
• Microprocessor (various): 2.8, 3.3, 5
 AC for display background
 Battery Charge Controller
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10/8/2025 Application of Power Electronics 23
 Cont’d….
• Power Electronics Application: Power Supply of Earth-orbiting Spacecraft

Dissipative Dissipative
Shunt Shunt
Regulator Regulator

Solar Array

Battery Battery DC-DC DC-DC

Charge Charge Converter Converter
Discharge Discharge
Controllers Controllers
Payload Payload
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10/8/2025 Application of Power Electronics 24
 Cont’d….
• Power Electronics Application: Traction

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10/8/2025 Application of Power Electronics 25
 Cont’d….
• Power Electronics Application: Traction

AC Machine AC Machine

Inverter Inverter

mprocessor

Battery DC-DC
Charger Converter

Electronics

Lithium battery Inverter Inverter

AC Machine AC Machine

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10/8/2025 Application of Power Electronics 26
 Cont’d….
• Power Electronics Application: Traction

All communication device, Wing manipulation, air conditioning,

emergency Power supply etc

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10/8/2025 Application of Power Electronics 27
 Power Semiconductor Switching Devices

• Power semiconductor switching devices can be :

– Power DIODE
– Power TRANISTORS
• Power BJT,
• Power MOSFET,
• Power IGBT, etc.
– THYRISTORS
• SCR,
• GTO
• TRIAC, etc

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10/8/2025 Power Electronics Device 28
 Power electronic circuits and applications
INPUT OUTPUT
AC DC
• Commercially available AC • Variable DC for DC-motors
• Variable voltage like Wind • Constant DC for Inverter

DC DC
• Converter output • Converter output
• Photovoltaic Power Systems • Photovoltaic Power Systems

DC AC
• Converter output • Inverter to Load
• Photovoltaic Power Systems • Inverter to Grid

AC AC
• commercially available AC • Constant AC to Grid
• Variable voltage like Wind • Variable AC for Drive
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10/8/2025 Power Electronics Circuits and Applications 29
 Power Semiconductor Devices and Characteristics

• Power semiconductor devices: devices which can be used

as switches or rectifiers in power electronic circuits
– Has high voltage withstand capability in the OFF state
– High current carrying capability in the ON state
– Types
• Power DIODE
• SCR (Silicon Controlled Rectifier)
• TRIAC (Three terminal diodes for AC current)
• GTO (Gate turn-off Thyristor)
• BJT (Bipolar Junction Transistor)
• MOSFET (Metal Oxide Semi-conductor Field Effect Transistor)
• IGBT (Insulated Gate Bipolar Transistor)
• IGCT (Insulated Gate Commutated Thyristor)

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10/8/2025 Power Electronics Device 30
 Cont’d…

• Selection of power electronic devices for a given application is

based on the following characteristics
1. Voltage rating: The maximum instantaneous voltage that the device
is required to block in its OFF-state, before break down occurs
2. Current rating: The maximum current (instantaneous, average,
and/or rms.) that a device can carry in its ON-state, before it will be
damaged by the excessive heating within the device.
3. Switching speeds: The speeds with which a device can make a
transition from its ON-state to OFF-state, or vice-versa.
• Small switching times associated with fast-switching devices result in low
switching losses, or considering it differently, fast switching device can be
operated at high switching frequencies with acceptable switching power
losses.
4. On-state voltage: the voltage drop across a device during its ON-
state while conducting a current. The smaller this voltage, the
smaller will be the ON-state power loss.

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10/8/2025 Power Electronics Device 31
 Cont’d…

1. Power DIOD
– It is a crystalline semiconductor device, made primarily from
silicon.
– Has a significant role in power electronics circuits for
conversion of electric power, used mainly for rectification
process.
– It conducts current in one direction (forward bias) and prevents
current flow in the other direction (reverse bias)

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10/8/2025 Power Electronics Device 32
 Cont’d…

• Construction and characteristics of power diodes

– Power diode has P-I-N structure (additional drift layer) in between P-N layer
as compared to the signal diode having a P-N structure
– The intrinsic semiconductor layer (drift layer) improves the capability to
withstand high reverse voltage and high power holding capacity.
 Power diode requires a proper cooling arrangement for handling large
power dissipation
• When the diode is forward
biased the current flows
from anode to cathode
(holes pushed from p-layer
to n-layer, electrons
pushed from n-layer to p-
layer)
• The current flow continues
Symbol Construction
through the circuit due to Structure
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the external power supply.
10/8/2025 Power Electronics Device 33
 Cont’d…
V-I characteristics of power diode IFM
S1 VF = 0
IF VF
IR = 0
IR

R
+ VRB IR
V
V VR V VFM
-
IF

IRM

I D  I S (eVD / nVT  1)
ID Current through the diode
• ON voltage drop, VFM
VD diode voltage with anode positive with respect to cathode
• OFF leakage current, IF.
IS leakage current typically (10e-6A to 10e-15A)
n empirical constant known as emission coefficient (ideality factor) whose value varies from 1 to 2.
VT =kT/q where q = 1.6022e-19, T is the absolute temperature in degree Kelvin, k Boltzmann's
constant = 1.3806x10e-23 J/K

• Reverse voltage is to be smaller than Reverse breaking, VRB.

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10/8/2025 Power Electronics Device 34
 Cont’d…

• Even if the voltage applied to the diode is changed from the

forwarded direction to the reverse direction, the diode will not turn
off immediately.
• A certain time is required for the transition from ON to OFF state
• The time required for this transition, reverse current flows, is called
reverse recovery time (trr)
Practical

Ideal
tp –time required to reach –ve maxima
td – decaying time
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10/8/2025 Power Electronics Device 35
 Cont’d…
Diode Reverse Recovery time trr :- Refers to the time between the instant If becomes
Zero and the instant the diode blocks the reverse voltage applied (25% of the maximum
reverse current).
The most important parameters of the power diode are:
1. Forward voltage (VF): is the voltage drop of a diode across
the anode (A) and cathode (K) at a defined current level when
it is forward biased
2. Breakdown voltage (VB): is the voltage drop across the diode
at a defined current level when it is beyond reverse biased
level. Also known as avalanche
3. Reverse current (IR): is the current at a particular voltage,
which is below the breakdown voltage.
4. Reverse recovery time (trr):
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10/8/2025 Power Electronics Device 36
 Cont’d…

• Power diode types

o Depending on the recovery characteristics and manufacturing techniques,
power diode can be classified into:
Standard or general-purpose diodes
• About 25 µs reverse recovery time with voltages up to 6.5 kV
• Current from 1A to 5 kA
• ON time in microseconds
Fast recovery diodes
• Less than 5 µs recovery time with voltage from 50 to 3 kV
• Current 1A to hundreds of Amps
• Essential for high frequency switching of power converters
Schottky diodes
• Maximum voltage limited to 100 V
• Has a low ON-state voltage and a very small recovery time
• Recovery of about 100 nanoseconds

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10/8/2025 Power Electronics Device 37
 Cont’d…

Thyristor
– The word thyristor is formed from thyratron (= “valve tube”)
and transistor
– It is a four layer solid-state semiconductor device with P and N
type material with P-N-P-N structure and three P-N junctions
– The thyristor is the general name given to a family of different
power semi-conductor devices types:
• Silicon controlled rectifier (SCR)
• Triode for alternating current (TRIAC)
• Diode for alternating current (DIAC)
• Get turned off thyristor (GTO)
• MOS-controlled thyristor (MCT)
• Silicon controlled switches (SCS)

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10/8/2025 Power Electronics Device 38
 Cont’d…

1. SCR
– Three terminal semi-controlled switch (Anode (A), Cathode (K)
and Gate (G)). It was invented in early 1950s
– Most popular and commonly used thyristor families due to its:
• Fast switching action, small size and high voltage and current ratings
– Has high power handling capabilities

• It is a unidirectional device. i.e. It blocks current

flow in reverse direction (cathode to anode)

• It is turned ON by applying +Ve gate signal

• Can be tuned OFF by natural commutation and

forced commutation SCR Structure SCR Symbol
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10/8/2025 Power Electronics Device 39
 Cont’d…

• SCR two transistor model

• SCR Characteristics

• Gate requires small positive pulse for short duration to turn S C R on.
• Once the device is on, the gate signal serves no useful purpose and can be
removed
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10/8/2025 Power Electronics Device 40
 Cont’d…

• Latching Current:-This is the minimum anode current required to

maintain the thyristor in the on-state immediately thyristor has been
turned on and the get signal has been removed.
• Holding current:- This is the minimum anode current required to
maintain the thyristor in the on-state after latching.
i.e.
– Latching current > holding current
– Latching current is during triggering
– Holding current is during normal operation
 SCR is very high power device compared to other devices except diode.

 SCRs with voltages of 4 to 6kV and current of 3kA to 4kA are common.
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10/8/2025 Power Electronics Device 41
 Cont’d…

• Example: The latching current for the SCR circuit given below is
50mA and the firing pulse duration is 50µs. Determining the current
flows through the SCR during the triggering and decide that the
SCR will get fired?

>
T1

R1
V t
i  1 e ,   
R

 
L 0.5H
R 20
 0.025
i 20 ohm
100 v  50*106 
V1
i  1 e 2.5*102

DC = 100 V
1 20   
 
L1
2*103
0.5H
i  5 1 e
2
i  9.9mA
• The current through the SCR is less than the latching current, then
the SCR will not be fired
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10/8/2025 Power Electronics Device 42
 Cont’d…

• Example: If the latching current for an SCR circuit given below is

4mA, determine the minimum width of gating pulse required to
properly trigger (turn on) the SCR.

T1

> Ldi V di
i 1 V  ,  
V1 L1 dt L dt
0.1H
Ldi Li
dt  , t 
DC = 100 V
2

V V
0.1H * 4 *103 A
t  4m s
100V

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10/8/2025 Power Electronics Device 43
 Cont’d…

2. GTO
• GTO is a special Thyristor which can be
turned off by negative gate current and
turned on by a positive gate current.

• GTOs are comparable with SCR in power

capacity having voltage and current rating
in the range of 6kV and 4kA.
• Has slow switching speed
• The p-n-p-n layers are the same as SCR except at junction J3. At junction J3
the gate connection is designed in such a way that the current injection from
the gate covers large or all of the junction J3 area. As the result, injection of
large reverse current pulse on the gate can stop the current flow from anode
to cathode and switch-off the device. The reverse gate current required can be
as high as 20% of the anode current which means low current gain.
• However; only a short period (order of 50ms) gate pulse is required.
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10/8/2025 Power Electronics Device 44
 Cont’d…

2. TRIAC
• Current flows both in the forward and
reverse direction. It can also block both
voltages.
• The direction of current flow depends on the
polarity of voltage across the terminals T1
and T2. Compared to SCRs the rate of
change of voltage , the current gain,
voltage rating and current ratings are limited.
Triacs are available for voltages of up to 1kV
and current of up to 50A.
• The Triac turns off only when the current
through the main terminals becomes zero
• It is widely used in residential lamp dimmers, heater control and speed
control of small series and induction motors
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10/8/2025 Power Electronics Device 45
 Cont’d…
• V-I characteristics of TRIAC

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10/8/2025 Power Electronics Device 46
 Power Transistors
• Power transistors are used as switching devices, which are operated in
a saturation and cut-off region, resulting a low on-state voltage drop
• Have controlled turn-on and turn-off characteristics, requires
relatively very small control signals
• No linear region operation allowed- due to excessive power loss

Characteristics Transistors Thyristor

Switching speed faster lower
Switching loss lower higher
Voltage and current ratings Lower higher

On state conduction loss higher lower

applications Low to medium High power
power application applications
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10/8/2025 Power Electronics Device 47
 Cont’d…

• The main widely used power transistors can be

categorized as:

– Bipolar junction transistors (BJTs)

– Metal oxide semiconductor field effect transistors (MOSFETs)

– Insulated gate bipolar transistors (IGBTs)

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10/8/2025 Power Electronics Device 48
 Cont’d…

1. Bipolar Junction Transistor (BJT)

Collector C  Three terminal devices Collector,
Emitter and base.
IC
p
 It can be PNP or NPN. Due to
Base IB
n VCE relatively easy mobility of
electrons than holes NPN is most
p
J3 IE common.
E

Emitter
(a) (b)

 Operating principles can be seen by referring to I-V characteristics of the BJT. Current
flows from collector to emitter while the base current is used to control the current
flow. Therefore; BJT is a current controlled switch.

 Common Emitter Configuration is the most used for switch application instead of
common base or common collector configurations.
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10/8/2025 Power Electronics Device 49
 Cont’d…

KVL IC

Saturation line
IC
V  I C R L  VCE Saturation region

IB2
RL + Base current
IB1
P2 increasing
V VCE V P1
IB - IC   
VCE RL RL IB=0

VBE OFF
Cut-off region

 The minimum base current to move the operating point to saturation region is given by
I I
I B  CS  CS
hFE  FE
hFE is given on datasheets, typical 10% of rated IC.
BJT
 Switching frequency of 20 kHz (medium)
 Maximum voltage ratings of 1.5 kV and maximum current ratings of 1 kA
 Continuous current control
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10/8/2025 Power Electronics Device 50
 Cont’d…

2. Power MOSFET
Drain D
+

n+ n+
n- n-
p
p p
p
n+ n+ n+ n+
-
Source S
G
+
Gate G

(a) (b) S
(c)

 A power MOSFET is a voltage controlled device and requires only a small input
current
 It is a three terminal device where the voltage on the gate terminal controls the flow
of current between the output terminals, Source and Drain.
 The switching speed is very high and the switching times are of the order of
nanoseconds
 Power MOSFETs find increasing applications in low power high frequency
converters.
 Have a problem of electrostatic discharge and require special care handling
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10/8/2025 Power Electronics Device 51
 Cont’d…

 The impedance of the gate to source is very high in the range 109 to 1011. Therefore;
negligible current flows from gate to source that is why power MOSFET is called
voltage controlled device.

 Power MOSFETs switching frequencies are from hundreds of kilohertz to megahertz

range. The power MOSFET rating is up to 500V and 150A.
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10/8/2025 Power Electronics Device 52
 Cont’d…

3. Insulated gate bipolar Transistor (IGBT)

Collector C C
+

P+ P+
n+ n+
n- n-
pp pp
n+ n+ n+ n+
G
-
Emitter E

+
Gate G

(a) (b) (c) E

Current-voltage characteristics of IGBT

 The IGBT has the high input impedance and high-speed characteristics of a
MOSFET with low saturation voltage of a bipolar transistor.
 The IGBT is turned on by applying a positive voltage between the gate and
emitter
 And turned off by making the gate signal zero or slightly negative.
 It has a much lower voltage drop than a MOSFET of similar ratings.
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10/8/2025 Power Electronics Device 53
 Cont’d…

 IGBTs are hybrids of the power MOSFET and BJT having the
advantages of the two.
 They are voltage controlled as power MOSFET and
 Have low conduction loss as BJTs.

IGBTs have higher voltage and current rating

• up to 3.5 kV rating and
• Up to 2 kA current ratings .

 The resistance of n-channel is small compared to that of power MOSFET due

to injection of holes from p-layer. As the result the voltage drop during ON-
state is low and the current capacity is higher.
 Switching frequency is in hundreds of kilo Hertz.

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10/8/2025 Power Electronics Device 54
 Cont’d…

Thank You!

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10/8/2025 Power Electronics Device 55