HONG KONG INSTITUTE OF
VOCATIONAL EDUCATION
Electronic Devices
(EEE3107)
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Introduction to
Electronics :
P-type and N-type
materials
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Semiconductor
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Semiconductor & Valence Electron
Semiconductor
• Semiconductors have electric
conductivity in between
conductors & insulators that is
easier to be controllable.
Valence electron
• Electrons in the outermost shell
of an atom are called valence
electrons
• Valence electrons participate in
the formation of a chemical
bond
Simplified silicon atomic structure
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Semiconductor materials
• Semiconductor materials are chemical elements from
group III (Tri-valent), IV(quad-valent) or V (penta-valent) of
the Periodic Table.
Examples
• Tri-valent elements: Aluminium (Al), Boron (B), Gallium
(Ga)
• Quad-valent elements: Silicon (Si), Germanium (Ge)
• Penta-valent elements: Arsenic (Ar), Phosphorous (P),
Antimony (Sb)
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N-type and P-type Semiconductor
• Two types of semiconductors : n-type semiconductor & p-type
semiconductor.
• n-type semiconductors
– Quad-valent semiconductor
(e.g. Si) doped with
pentavalent element (e.g.
Arsenic)
• p-type semiconductors
– Quad-valent
semiconductor doped
with trivalent element
(e.g. Gallium).
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Formation of PN-Junction
• A pn-junction is formed between p-type semiconductor and n-
type semiconductor material.
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Biasing a PN-Junction
Biasing
• Bias means that operating conditions for an electronic device
was set-up by an external source (normally an external voltage
for a pn-junction).
• There are two types of biasing for p-n junction: forward biasing
and reverse biasing.
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Biasing a PN-Junction
Forward Bias
• Forward bias a p-n junction allows electric current (IF) flows
through a p-n junction.
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Biasing a PN-Junction
Reverse Bias
• Reverse bias prevents current through a p-n junction
PN-Junction Breakdown
• At very strong reverse bias, breakdown of the junction occurs.
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DIODE and RECTIFIER
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Structure of Diode
– A diode is a piece of semiconductor with a p-n junction
connected to two terminals
• Anode (A) is the terminal at the p-type region
• Cathode (K) is the terminal at the n-type region
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Diode Packages
Typical diode packages
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Diode Characteristics
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V-I Characteristic Curve
(a) Forward Bias
• When the forward bias voltage is less than the knee point voltage (0.7V), no
or very little current can flow through the diode.
• When the forward bias voltage is above the knee point voltage (0.7V),
current increases rapidly as voltage increases.
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V-I Characteristic Curve
(b) Reverse Bias
• In reverse biased curve, little or no reverse current until the
reverse voltage reaches the break-down voltage.
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Practical diode model
a) Forward bias - A diode is modeled by
a battery with voltage VF (0.7V in
this illustration) and a closed switch.
b) Reverse bias – A diode is modeled by
an open switch.
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Formulas (practical diode model)
(a) Forward bias: (b) Reverse bias:
(i) Diode forward voltage (i) Diode blocks the supply
drop = VF voltage Vbias.
(ii) Forward current Voltage drop across the diode =
(iii)Voltage drop across R / R supply voltage VBIAS .
IF = (Vbias – VF) / R (ii) Current I=0A
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Example
(a) Identify the type of diode biasing for the circuit shown.
(b) Given that the forward voltage drop of diode VF = 0.7V, supply
voltage Vbias = 9 V, R = 200 Ω, calculate (i) the voltage drop
across R, and (ii) the current IF flowing through the diode.
Solution
(a) The diode is forward biased.
(b) (i) Voltage drop across R = Vbias – VF = 9 V – 0.7 V = 8.3 V
(ii) Forward current IF = V / R = 8.3 V / 200Ω = 0.0415 A = 41.5 mA
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Example
(a) Identify the type of diode biasing for the circuit shown.
(b) Given that the forward voltage drop of diode VF = 0.7V, supply
voltage Vbias = 9 V, R = 200 Ω, calculate (i) the voltage drop
across R, and (ii) the current IF flowing through the diode.
Solution
(a) The diode is reverse biased.
(b) resistor
(c) (i) Voltage drop across the = 0 V (the diode drops all the supply
voltage)
(ii) Forward current IF = V / R = 0 V / 200Ω = 0 A
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Diode Applications
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Half-wave rectifier circuit
D Vin
VP(in)
+ +
RL Vout - -
Vin Vout
VP(out)
VAVG
Vp(in) : peak input voltage
Vp(out) : peak output voltage
Circuit Operation VAVG : average voltage
• Vin is sinusoidal waveform consists of positive half cycles and negative half cycles.
• During a positive half-cycle of the input voltage, the diode D is forward-biased, it
conducts current. The current produces a positive output voltage across the load RL.
• During a negative half-cycle of the input waveform, the diode is reverse-biased, it
does not conduct current. Output voltage Vout is 0V.
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Half-wave rectifier circuit
D Vin
VP(in)
Vin Vout Vout
VP(out)
VAVG
Formulas for half-wave rectifier circuit
•Peak input voltage Vp(in) = 1.414*Vin (Vin is in rms value)
•Peak output voltage Vp(out) = Vp(in) -VF
•Average output voltage VAVG= VP(out) / π = 0.318Vp(out)
•Output frequency and input frequency: fout = fin
•Peak Inverse Voltage PIV=Vp(in)
(When the diode is reverse-biased during the negative half-cycles, the diode withstands a
the Peak Inverse Voltage (PIV))
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Full Wave Bridge Rectifier
Same circuit diagrams for Full Wave Bridge Rectifier.
Use of the ground symbol in electronic circuit:
(i) To indicates the zero volt location
(ii) To reduce the number of lines.
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Full Wave Bridge Rectifier
Circuit Operation
(a) Positive half-cycle
• During the positive half-cycle of the input, D1 and D2 are
forward-biased and conduct current in the direction shown.
• D3 and D4 are reverse-biased and do not conduct current.
• A positive pulse voltage is developed across the load RL.
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Full Wave Bridge Rectifier
Circuit Operation
(b) Negative half-cycle
• During the negative half-cycle of the input, D3 and D4 are
forward-biased and conduct current .
• D1 and D2 are reverse-biased and do not conduct current.
• Again another positive pulse voltage is developed across
the load RL.
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Formulas for Full-Wave Bridge Rectifier Circuit
D1 D2 VP(in)
Vp(in)
D4 D3 Vp(out)
VAVG
Formulas
Peak output voltage Vp(out) = Vp(in) − 2VF
Output frequency f (out)= 2 f(in)
Average DC output voltage VAVG= (2 / π) *Vp(out) = 0.637Vp(out)
Peak Inverse Voltage PIV=Vp(out) + VF or PIV= Vp(in) –VF
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Example
Question:
Given that the input voltage to the rectifier circuit is 12 Vrms , forward diode
voltage drop for each diode VF = 0.7V
(a) Determine the peak output voltage Vp(out) for the bridge rectifier.
(b) Calculate the peak inverse voltage (PIV) of the diodes?
Solution:
V p(in) = 1.414*Vrms = 1.414(12 V) ≅ 17 V
V p(out) = V p(sec) − 1.4 V = 17 V − 1.4 V = 15.6 V
PIV = Vp(out) + 0.7 V = 15.6 V + 0.7 V
= 16.3 V
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Diode Data Sheet
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Diode Data Sheet
Understand the following parameters:
VF: Forward voltage
•VFM is the maximum forward voltage at forward current IF of 1A.
IF(av) : Maximum average forward current at 75oC
VRRM : Maximum peak repetitive reverse voltage
VRWM : Maximum working peak reverse voltage
VDC : Maximum dc blocking voltage
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Transformer Circuit
Npri Nsec
V(pri) V(sec)
Primary winding Secondary winding
• Npri : number of turns in the primary winding
• Nsec : number of turns in the secondary winding
• Transformer turns ratio n= Nsec / Npri
• V(sec) = n*V(pri)
• Turns ratio n = Nsec / Npri = V(sec) / V(pri) = Vp(sec) / Vp(pri)
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END
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