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Final Exam for ELEC 321: Key Problems

The document is an example final exam for ELEC 321, consisting of seven problems covering topics such as cubic unit cells, step potential functions, Fermi-Dirac distribution, semiconductor concentrations, electric fields in n-type silicon, excess carrier concentrations in p-type materials, and characteristics of a GaAs p-n junction. Each problem includes specific questions that require calculations and derivations related to the respective topics. The exam assesses students' understanding of semiconductor physics and materials science concepts.

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Stefania Marandola
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7 views2 pages

Final Exam for ELEC 321: Key Problems

The document is an example final exam for ELEC 321, consisting of seven problems covering topics such as cubic unit cells, step potential functions, Fermi-Dirac distribution, semiconductor concentrations, electric fields in n-type silicon, excess carrier concentrations in p-type materials, and characteristics of a GaAs p-n junction. Each problem includes specific questions that require calculations and derivations related to the respective topics. The exam assesses students' understanding of semiconductor physics and materials science concepts.

Uploaded by

Stefania Marandola
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Example Final Exam for ELEC 321

Problem #1 (10%)
A cubic unit-cell is defined in terms of the following placement of atoms on a cube of edge-length
a:
- 4 atoms positioned a/2 up each of the vertical edges of the cube
- 2 atoms in the middle of the top and bottom surfaces.

(a) This unit cell explains one of the standard cubic unit cell which were named in class.
Which one is it? (5 points)
(b) How many atoms are there per unit cell? (5 points)

Problem #2 (15%)
For the step potential function shown in Fig. P2, assume that particle energy E > V0 and that the
particle is incident from the +x direction traveling in the -x direction.

(a) Write the wave solutions for each region (5 points)


(b) Derive expressions for the transmission and reflection coefficients. (10 points)

Fig. P2

Problem #3 (15%)
The Fermi energy level for copper at T = 300 K is 7.0 eV. The electrons in copper follow the
Fermi-Dirac distribution function.
(a) Find the probability of an energy level at 7.15 eV being occupied by an electron. (5 points)
(b) Find the probability of an energy level at 6.85 eV being occupied by an electron. (5 points)
(c) Determine the probability of an energy level at E = EF being occupied at T = 300 K and at
1000 K. (5 points)

Problem #4 (15%)
Consider Si sample at T = 300 K with a donor concentration three times the acceptor concentration.
-5
(a) If the probability of finding an electron at the bottom of conduction band is 10 calculate
the electron and hole concentration. (5 points)

1
(b) Calculate the acceptor and donor concentration assuming complete ionization. (5 points)
(c) Calculate the electron and hole concentration at T = 500 K. (5 points)

Problem #5 (10%)
At 300K, in an n-type silicon slab of 1μm thickness, the donor concentration is changing
exponentially from the surface down according to

; x is in micrometers.

x is the coordinate normal to the surface (x=0 marks the surface) and y is coordinate parallel to
the surface.

(a) What is the maximum value of internally-induced electric-field perpendicular to the


surface? Please pay very careful attention to the units!

(b) What is the maximum value of internally-induced electric field in the horizontal direction?
Please pay very careful attention to the units!

Problem #6 (20%)
The semiconductor is a homogeneous, p-type material in thermal equilibrium for t ≤ 0. The excess
minority carrier lifetime is  n 0 10 6 s . At t = 0, an external source is turned on which produces
excess carriers uniformly at rate of g '  10 20 cm 3 s 1 . At t  2  10 6 s , the external source is
turned off.

(a) Derive the expression for the excess-electron concentration as a function of time for 0 ≤ t ≤
∞. (7 points)
(b) Determine the value of excess electron concentration at (i) t = 0, (ii) t  2  10 6 s , (iii)
t  3  10 6 s and (iv) t = ∞. (8 points)
(c) Plot the excess electron concentration as a function of time. (5 points)

Problem #7 (15%)
Consider a GaAs p-n junction uniformly doped on either side of the metallurgical junction. T is
300 K. At zero bias, only 20 percent of the total space charge region is to be in the “p” region. The
built-in potential is Vbi=1.2 V. For zero bias determine Na, Nd, xn, xp, W, and Emax. Relative
permittivity of GaAs is 13.1.

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