ECT201 SOLID STATE DEVICES (S3)

Unit-wise Question Bank

MODULE – 1
1. Neat diagrams explain the location of Fermi levels in intrinsic, p-type and n-type
semiconductors.
2. Draw energy band diagrams for metals, semiconductors and insulators.
3. Explain the properties of an intrinsic semiconductor.
4. Explain Fermi-Dirac distribution function.
5. What is effective mass?
6. Explain the bonding in i) metals ii) semiconductors iii) insulators.
7. Show that the intrinsic Fermi level lies in the middle of the band gap.
8. Explain about Quasi-Fermi levels in semiconductors.
9. Explain the generation and recombination mechanisms of excess carriers.
10. Derive the expression for carrier concentration in a semiconductor and explain.
11. Define excess carriers in a semiconductor and explain their significance.
12. Explain the generation and recombination mechanisms of excess carriers in a
semiconductor.
13. What are the quasi-Fermi levels and how do they vary with excess carrier
concentrations in a semiconductor?
14. Define density of states and effective density of states in a semiconductor.
15. Explain how the density of states varies with energy in a semiconductor.
16. How is the effective density of states related to the density of states in a
semiconductor?
17. Define the equilibrium concentration of electrons and holes in a semiconductor.
18. Explain how the equilibrium concentration of electrons and holes varies with
temperature and doping concentration.
19. What is the difference between the equilibrium concentration of electrons and holes
in an n-type and p-type semiconductor?
20. Explain the concept of doping in semiconductors.
21. Draw the energy band diagram for an n-type and p-type semiconductor.
22. What is the difference between the energy band diagrams of n-type and p-type
semiconductors?
23. Define fermions and explain the Fermi Dirac distribution.
24. What is the Fermi level and how is it related to the Fermi Dirac distribution?
25. How does the Fermi level change with temperature and doping in a semiconductor?
26. Define intrinsic and extrinsic semiconductors and explain their differences.
27. How are extrinsic semiconductors created? Explain with examples.
28. What is the effect of doping on the properties of a semiconductor? Explain.

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MODULE – 2
1. With a suitable graph, explain the effect of temperature on the mobility of charge
carriers in a semiconductor.
2. With a suitable graph, explain the effect of high field applied to a semiconductor.
3. With equations, differentiate between drift and diffusion currents in a semiconductor.
4. Mention two applications of Hall effect.
5. Write down the current equations in a semiconductor.
6. Explain the term mobility with respect to semiconductors. What are the factors that
mobility depends upon?
7. What is the effect on drift and diffusion currents if (a) the concentration of electrons in
the semiconductor is doubled? (b) a fixed quantity of electrons is injected into the
semiconductor?
8. Drift current is caused by a potential gradient whereas diffusion current is due to a
concentration gradient. Justify this statement with necessary equations.
9. In a semiconductor where electric field and concentration gradient are both directed
from left to right, neatly label the direction of particle flow and the direction of current
due to the drift and diffusion of electrons and holes.
10. Explain the effect of temperature and doping on the mobility of charge carriers in a
semiconductor.
11. Electron mobility and life time in a semiconductor at room temperature are 0.36 m 2
/V-s and 340 µs respectively. Compute the electron diffusion length.
12. Derive the expression for finding the carrier concentration of a semiconductor from
Hall voltage.
13. Write the expression for conductivity of a semiconductor. What happens to the
conductivity when the concentration of majority carriers is doubled?
14. With suitable diagram, explain the variation in energy levels of a semiconductor when
an electric field is applied.
15. With suitable graph, explain the variation of electron drift velocity with applied electric
field in a semiconductor.
16. Write down Einstein’s equation. What is its significance?
17. What is diffusion length. Write down the expression for electron concentration at a
length x from one end of a n type semiconductor into which excess electrons are
injected at x=0.
18. Draw and explain the graph showing the distribution of excess carriers with respect to
time in an n-type semiconductor.
19. Write the mathematical expressions and sketch the direction of flux and current in a
semiconductor , where the concentration of electrons increases towards right.
20. With neat graph, explain the different types of scattering taking place in a
semiconductor with variation in temperature.
21.a) Explain the term mobility with respect to semiconductors. Which current component in
a semiconductor is dependent on mobility ? Derive the current equation.

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b) Calculate the hole current through a Si sample 0.5𝜇𝑚 long and 1𝜇𝑚2 in cross sectional area
doped with 1017phosphorus atoms/𝑐𝑚3 at 300K when 10V is applied across it. Given (𝜇𝑛 =
650𝑐𝑚2 /𝑉. 𝑠)
22. a) With suitable figure explain Hall effect in an n-type semiconductors. Derive an
expression for the concentration and mobility of electron.

b) Consider a semiconductor bar with w=0.1mm, t=10μm and L=5mm. For B=10kg
(1kg=10-5Wb/cm2) and a current 1mA, we have VAB=-2mV, VCD=100mV, Find the type,
concentration, and mobility of the majority carrier.
23.a) Derive continuity equation for holes.
b) Solve the continuity equation, under steady state conditions assuming the semiconductor is
long and no drift current is present. Plot the solution.
24. a) Derive expression for conductivity of holes and the current density when an electric field
E(x) is applied across the semiconductor.
b) The Fermi level separation EF – Ei in a Si sample at 300K is 0.29eV . Determine the carrier
concentration and conductivity of the specimen. Given that ni=1.5 x 1010cm-3, μn=1350cm2/Vs,
μp=480cm2/Vs.
25.a) Explain the variation of mobility of charge carriers with temperature and doping of the
semiconductor.
b) A potential of 100 mV is applied across a semiconductor bar, and the resulting current is 1
mA. A magnetic field of 10-4 Wb/cm2 is applied perpendicular to this semiconductor bar. The
hall voltage measured is -2 mV. The dimensions of the bar are width = 0.1 mm, length = 5 mm
and thickness = 10 µm. Find (i) the type of the semiconductor bar (ii) the concentration and the
mobility of majority carriers.
26.a) With suitable graph, explain the diffusion process with respect to distance and time.
b) Derive expressions for diffusion current due to electrons and holes in a semiconductor.
27) a)What is Hall Effect? Explain its significance? Derive expression to prove that majority
carrier concentration can be measured by using Hall Effect.
(b) How can we use Hall effect to calculate the mobility of majority charge carrier in a
semiconductor?
28. a) Derive Einstein’s relation.
b) A Si sample with 1015/cm3 donors is uniformly optically excited at room temperature such
that 1019/cm3 electron-hole pairs are generated per second. Find the change in conductivity of
the semiconductor. Electron and hole lifetimes are both 10μs. Dp = 12 cm2/s and
μn=1300cm2/Vs.
29) a) Derive the steady state diffusion equations in a semiconductor

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b) Electron mobility and life time in a semiconductor at room temperature are 0.28m2/V-s and
400 μs respectively. Compute the electron diffusion length.
30) a) Explain high-field effect with suitable graph.
b) A Silicon bar 100 cm long and 1 cm2 cross sectional area is doped with 1017Arsenic
atoms/cm3. Find the conductivity of the Si bar and the drift current . Given , electron drift
velocity =107 cm/s. Electron mobility at this doping is 1350 cm2/V-sec.

31) a) Differentiate between impurity scattering and lattice scattering. Explain how these
scattering events affect the mobility of electrons in a semiconductor?
b) A Si sample is doped with 1017 Boron atoms/cm3. What is the resistivity at 300K? Given
Dp = 12 cm2/s.
32. a)Sketch the steady state hole distribution in a long p-type semiconductor where an excess
hole concentration Δp is injected at one end.
b) In a very long p-type Si bar with a cross-sectional area of 0.5 cm2 and Na = 1017 cm-3 , we
inject holes such that the steady state excess hole concentration is 5 x 1016 cm-3 at x = 0.
(Assume that μp= 500 cm2 /V-s and τp = 10-10s) . Find the steady state separation between Fp
and Ec at x = 1000 Å and the hole current there.

33. a) In an n-type semiconductor bar, there is an increase in electron concentration from left
to right and an electric field pointing to the left. With a suitable sketch, indicate the directions
of the electron drift and diffusion current flow and explain why.
b) If we double the electron concentration everywhere , what happens to the drift current and
diffusion current?
c) If we add a constant concentration of electrons everywhere, what happens to the drift and
diffusion currents? Explain your answers with appropriate equations.
34. a) From the concept of diffusion process, derive the diffusion current density equations for
both electrons and holes.
b) Prove that the ratio D/µ in a semiconductor is a constant for a given temperature

35. a) Derive continuity equation for electrons and holes. Find the expression for distribution
of charge carriers in a long semiconductor bar if steady injection of carrier occurs at one end.

b) Sketch the energy band diagram of a semiconductor to which an electric field (pointing
towards the right) is applied.

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MODULE – 3
1. Derive the expression for Contact Potential.
2. Derive the Ideal Diode Equation.
3. Draw the figure of variation of electric field and charge density of a pn junction.
4. Draw a figure showing all the components of current in a forward biased pn junction.
5. Draw the energy band diagram of a pn junction diode at i) equilibrium ii) forward
biased iii) reverse biased.
6. What is a rectifying contact? Sketch the VI characteristics of a forward and reverse
biased rectifying contact.
7. Define contact potential and explain how it arises in a PN junction.
8. What is the effect of doping concentration on the contact potential in a PN junction?
9. How is the contact potential related to the band gap of the semiconductor materials
used in a PN junction?
10. Explain the electrical field, potential and charge distribution at the junction of a PN
junction.
11. How does the doping concentration affect the width of the depletion region in a PN
junction?
12. What is the effect of biasing on the electrical field, potential and charge distribution
at the junction of a PN junction?
13. Define forward and reverse biasing in a PN junction and explain their effects.
14. Draw the energy band diagrams for a PN junction under forward and reverse bias
conditions.
15. What is the difference between the depletion width and the diffusion length in a PN
junction under forward bias?
16. Define the ideal diode equation and explain its significance in a PN junction.
17. How does the temperature affect the ideal diode equation in a PN junction?
18. What is the effect of the series resistance on the current-voltage characteristics of a
PN junction?
19. Define metal semiconductor contacts and explain their significance in electronic
devices.
20. What is the difference between electron affinity and work function in a metal
semiconductor contact?
21. How does the choice of metal affect the rectifying properties of a metal
semiconductor contact?
22. Define ohmic and rectifying contacts and explain their differences.
23. What is the effect of the metal work function on the rectifying properties of a metal
semiconductor contact?
24. How does the doping concentration affect the rectifying properties of a metal
semiconductor contact?
25. Draw the current-voltage characteristics of a PN junction under forward and reverse
bias.
26. What is the difference between the minority carrier and majority carrier current
components in a PN junction?

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 27. How does the base width modulation affect the current-voltage characteristics of a
bipolar junction transistor?
28. Define a bipolar junction transistor and explain its operation.
29. What are the different current components in a bipolar junction transistor?
30. What is the effect of base width modulation on the collector current in a bipolar
junction transistor?

MODULE – 4

1. Explain about ideal MOS capacitor.

2. Draw the band diagrams of a MOS capacitor at equilibrium, accumulation, depletion
and inversion.
3. Explain about the accumulation, depletion and inversion process in a MOS capacitor.
4. What do you mean by work function? What is base width modulation? Explain with
the help of neat diagram. A2
5. Explain the working of a bipolar junction transistor.
6. Discuss about the current components of a bipolar junction transistor.
7. Explain the parameters of a BJT and derive their inter relationships.
8. Explain about transistor action.
9. Explain the amplification action of a bipolar junction transistor. B3
10. Enumerate the sources of base current in a transistor. A2
11. Explain the Early effect in bipolar junction transistors. Plot Early voltage on the
output characteristics of a BJT. B3
12. What are the effects of base width modulation on transistor characteristics? A3
13. Draw the structure of a PNP transistor. Clearly label the current components in the
figure. B2
14. Draw the structure of an NPN transistor. Clearly indicate the current components in
the figure. B2
15. Determine the base transport factor and emitter injection efficiency using the
parameter of a PNP transistor. 𝑖𝐸𝑝 = 2𝑚𝐴, 𝑖𝐶𝑝 = 1.98𝑚𝐴, 𝑖𝐸𝑛 = 0.01𝑚𝐴, . B3
16. What is punch through condition in bipolar transistor? A3
17. Draw the energy band diagram of an n-type semiconductor. Neatly label work
function, fermi potential and electron affinity. A2
18. Draw the energy band diagram of a p-type semiconductor. Neatly label work function,
fermi potential and electron affinity. A2

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19. What is fermi potential? Compare the fermi potential of intrinsic, n-type and p-type
semiconductors. A2
20. Write short notes on fermi potential, work function and electron affinity. Explain with
the help of energy band diagram. A3
21. Bipolar junction transistor is a current controlled current device. Justify with
necessary equations. A3
22. For a 𝑝+ 𝑛𝑝+ transistor write an expression for the effective width of base region. A3
23. What is flat band voltage? Write the expression for flat band voltage of an ideal n-
type MOS structure neglecting trapped charges near the oxide semiconductor
interface. B2
24. Draw the energy band diagram of a p-type MOS structure at equilibrium. A2
25. With the help of neat diagram explain how varying the doping concentration affects
fermi potential of an n-type semiconductor. B3
26. For an ideal MOS capacitor to be in strong inversion, what is the relationship between
fermi potential and surface potential? Justify your answer. A2
27. For an ideal metal-SiO2-Si capacitor having NA = 1017cm-3 at room temperature,
calculate the maximum width of the surface depletion region. Given the dielectric
permittivity of Si is 11.9×8.85×10–14 F/cm. B3
28. Draw the energy band diagram of an ideal MOS capacitor at equilibrium, accumulation,
depletion, and inversion condition. C1
29. a) Define with expression base transport factor, emitter injection efficiency, current
transfer ratio and base-to-collector current amplification factor for a PNP transistor.
b) For regular operation, the base region of a bipolar junction transistor should be
narrow and lightly doped. Justify this statement. D2
30. a) Draw and explain the capacitance-voltage characteristics of an ideal MOS
capacitor. b) Draw the energy band diagram of an ideal n-type MOS capacitor under
strong inversion condition. C1
31. a) For an ideal PNP transistor, the current components are given by IEp = 3 mA, IEn =
0.01 mA, ICp = 2.99 mA, and ICn = 0.001 mA. Determine the emitter injection
efficiency, the base transport factor, the common-base current gain, and base-to-
collector current amplification factor. b) Draw the cross section of a bipolar junction
transistor and explain its working. D2
32. a) For an ideal n-p-n transistor, the current components are given by IEn = 2 mA, IEp =
0.01 mA, ICn = 1.99 mA, and ICp = 0.001 mA. Determine the emitter injection

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 efficiency, the base transport factor, the common-base current gain, and base-to-
collector current amplification factor. b) What is Early effect? How does it affect the
transistor current components? D2
33. a) Draw the energy band diagram of an ideal MOS capacitor with a p-type substrate
under flat band conditions. Compare the surface potential with the fermi potential of
the bulk. b) With help of a neat diagram derive an expression for the work function of
an n-type semiconductor in terms of band gap energy and fermi potential. C2
34. a) What are the effects of real surfaces on the threshold voltage of a MOS capacitor?
b) Derive the threshold voltage equation of a real MOS capacitor. C1
35. a) Consider a MOS structure with Aluminum metal and silicon substrate. The
equilibrium Fermi potential of the doped silicon substrate is +0.2eV. Assuming no
trapped charges in the oxide or on the silicon-oxide interface, calculate the flat band
voltage across the MOS system. Given the work function of Al is 4.1eV, and the
electron affinity of silicon is 4.15eV. b) Draw the energy band diagram of the above
MOS structure under flat band conditions. D2
36. Draw the structure and band diagram of an ideal MOS capacitor with a P-type
substrate, under equilibrium and under strong inversion. Give the condition for strong
inversion with reference to the band diagram. C1
37. a) Explain the principle of operation of MOS capacitor with suitable energy band
diagram. Explain base width modulation. Explain its effect on terminal currents. C2
38. Draw the band diagram, charge distributions under inversion condition, electric field
distribution and potential distribution of an ideal MOS capacitor. C2
39. A PNP transistor with a cross-sectional area, 𝐴 = 10−4 𝑐𝑚2 has the following
properties at 300 K:

Emitter-side: 𝑁𝐴 = 1018 𝑐𝑚−3 , 𝜏𝑛 = 0.2µ𝑠, µ𝑛 = 2100𝑐𝑚2 /𝑉. 𝑠

Base-side: 𝑁𝐷 = 1015 𝑐𝑚−3 , 𝜏𝑛 = 10µ𝑠, µ𝑝 = 500𝑐𝑚2 /𝑉. 𝑠

Calculate the emitter injection efficiency when the emitter junction is forward biased
with 0.7V. If base transport factor is 0.99, estimate the base current, the collector current and
beta of the transistor. D3

40. a) Derive an expression for the depletion region charge density for a p-type MOS
capacitor under depletion mode of operation. b) Estimate the width of the depletion
region in µm for a p-type MOS capacitor under depletion mode of operation. Given

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 the dielectric permittivity of Si is 11.9×8.85×10–14 F/cm, substrate is dopped with
1017cm-3 acceptor impurities and a surface potential of 0V. D3
41. a) Consider the MOS structure that consists of an unknown metal and a p-type doped
silicon substrate. The equilibrium Fermi potential of the doped silicon substrate is –
0.3eV. A voltage of 1V is required to attain the flat band condition across the MOS
system. Assuming no trapped charges in the oxide or on the silicon-oxide interface,
calculate the work function of the unknown metal. Electron affinity of silicon is
4.15eV. b) Draw and explain the basic structure of a MOS capacitor. D2
42. a) Draw and explain the flow of current through a p-n-p transistor. b) Why is the
emitter region more heavily doped than the base? c) Draw the current-voltage
characteristics of a p-n-p transistor. C2
43. a) Draw and explain the flow of current through an n-p-n transistor. b) Show that
increasing the doping profile of the emitter, improves BJT terminal parameters.

MODULE – 5
1. Explain the structure and operation of a MOSFET.
2. Discuss about MOSFET output and transfer characteristics.
3. Explain threshold voltage of a MOSFET and its four components.
4. Derive the expression for threshold voltage of a MOSFET.
5. Derive the expression for drain current of a MOSFET in linear and saturation regions.
Discuss MOSFET scaling and its needs.
6. Compare constant voltage scaling and constant field scaling of MOSFET.
7. Explain the concepts of velocity saturation and hot carrier effects in MOSFET.
8. What is meant by DIBL in MOSFETs? How does it affect the threshold voltage of a
MOSFET?
9. Explain the principle of operation and advantage of FINFET.
10. Explain the short channel effects associated with reduction in size of MOSFET.
11. With the aid of suitable diagrams explain the structure and working of FINFET. List its
Advantages.
12. Explain Drain induced barrier lowering, Velocity Saturation, Threshold Voltage
Variations of MOSFETs.
13. What is MOSFET scaling and why is it necessary?
14. What are the advantages of constant voltage scaling over constant field scaling?
15. How does MOSFET scaling affect the performance and power consumption of
electronic devices?
16. Define subthreshold conduction and explain its significance in MOSFETs.
17. What is the relationship between gate voltage and subthreshold current in MOSFETs?
18. How does temperature affect subthreshold conduction in MOSFETs?
19. Define short channel effects and explain their significance in MOSFETs.

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20. What is channel length modulation and how does it affect the performance of
MOSFETs?
21. What is drain-induced barrier lowering and how does it affect the threshold voltage
of MOSFETs?
22. Define velocity saturation and explain its significance in MOSFETs.
23. How does velocity saturation affect the current-voltage characteristics of MOSFETs?
24. What is the difference between velocity saturation and mobility degradation in
MOSFETs?
25. Define threshold voltage variations and explain their significance in MOSFETs.
26. What are the different sources of threshold voltage variations in MOSFETs?
27. How can threshold voltage variations be reduced in MOSFETs?
28. Define hot carrier effects and explain their significance in MOSFETs.
29. What are the different types of hot carrier effects in MOSFETs?
30. How can hot carrier effects be minimized in MOSFETs?

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