COURSE FILE

ON

ELECTRONIC DEVICES & CIRCUITS

Course Code – EC201ES

I-B. Tech Semester-II

A.Y. 2022-2023

Prepared by

Mrs. [Link]
Asst. Professor
 Index of Course File

COURSE FILE INDEX

[Link] Course/Subject Name
1 Institute Vision & Mission
2 POs /PSOs
3 Course Structure
4 Course syllabus
5 Course Outcomes (CO)
6 Mapping CO with PO/PSO; course with PO/PSO
7 Academic Calendar
8 Time table - highlighting your course periods including tutorial
9 Lesson plan with number of hours/periods, TA/TM, Text/Reference book
10 Web references
11 Lecture notes
12 List of Power point presentations / Videos
13 University Question papers
14 Internal Question papers, Key with CO and BTL
15 Assignment Question papers mapped with CO and BTL
16 Scheme of evaluation with CO and BTL mapping
17 Result Analysis to identify weak and advanced learners
18 Result Analysis at the end of the course
19 Remedial class schedule and evidences
20 CO, PO/PSO attainment
21 Attendance register
22 Course file (Digital form)
 INSTITUTE VISION & MISSION

Vision:

To become a premier institute of academic excellence by providing the world class education
that transforms individuals into high intellectuals, by evolving them as empathetic and responsible
citizens through continuous improvement.

Mission:

 IM1: To offer outcome-based education and enhancement of technical and practical skills.
 IM2: To Continuous assess of teaching-learning process through institute-industry
collaboration.
 IM3: To be a center of excellence for innovative and emerging fields in technology
development with state-of-art facilities to faculty and students’ fraternity.
 IM4: To Create an enterprising environment to ensure culture, ethics and social responsibility
among the stakeholders.
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC AUTONOMOUS INSTITUTION)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

PROGRAM OUTCOMES
PO1: ENGINEERING KNOWLEDGE: Apply the knowledge of mathematics, science,
engineering fundamentals, and an engineering specialization to the solution of complex engineering
problems.
PO2: PROBLEM ANALYSIS: Identify, formulate, research literature, and analyze complex
engineering problems reaching substantiated conclusions using first principles of mathematics,
natural sciences, and engineering sciences.
PO3: DESIGN/DEVELOPMENT OF SOLUTIONS: Design solutions for complex engineering
problems and design system components or processes that meet the specified needs with appropriate
consideration for the public health and safety, and the cultural, societal, and environmental
considerations.
PO4: CONDUCT INVESTIGATIONS OF COMPLEX PROBLEMS: Use research-based
knowledge and research methods including design of experiments, analysis and interpretation of
data, and synthesis of the information to provide valid conclusions.
PO5: MODERN TOOL USAGE: Create, select, and apply appropriate techniques, resources, and
modern engineering and IT tools including prediction and modelling to complex engineering
activities with an understanding of the limitations.
PO6: THE ENGINEER AND SOCIETY: Apply reasoning informed by the contextual knowledge
to associate, health, safety, legal and cultural issues and the consequent responsibilities relevant to
the professional engineering practice.
PO7: ENVIRONMENT AND SUSTAINABILITY: Understand the impact of the professional
engineering solutions in societal and environmental contexts, and demonstrate the knowledge of, and
need for sustainable development.
PO8: ETHICS: Apply ethical principles and commit to professional ethics and responsibilities and
norms of the engineering practice.
PO9: INDIVIDUAL AND TEAM WORK: Function effectively as an individual, and as a member
or leader in diverse teams, and in multidisciplinary settings.
PO10: COMMUNICATION: Communicate effectively on complex engineering activities with the
engineering community and with society at large, such as, being able to comprehend and write
effective reports and design documentation, make effective presentations, give and receive clear
instructions.
PO11: PROJECT MANAGEMENT AND FINANCE: Demonstrate knowledge and
understanding of the engineering and management principles and apply these to one’s own work, as
a member and leader in a team, to manage projects and in multidisciplinary environments.
PO12: LIFE-LONG LEARNING: Recognize the need for, and have the preparation and ability to
engage in independent and life-long learning in the broadest context of technological change
BR22 [Link] CSE (Data Science) Syllabus SIIET

SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY

[Link]. in COMPUTER SCIENCE AND ENGINEERING (Data Science)
COURSE STRUCTURE, I YEAR SYLLABUS (BR22 Regulations)
Applicable from Academic Year: 2022-23 Batch

I Year I Semester

S. Course
Course Title L T P Credits
No. Code
1. MA101BS Matrices and Calculus 3 1 0 4
2. CH103BS Engineering Chemistry 3 1 0 4
3. CS103ES Programming for Problem Solving 3 0 0 3
4. EE101ES Basic Electrical Engineering 2 0 0 2
5. ME101ES Computer Aided Engineering Graphics 1 0 4 3
6. CS106ES Elements of Computer Science & Engineering 0 0 2 1
7. CH106BS Engineering Chemistry Laboratory 0 0 2 1
8. CS107ES Programming for Problem Solving Laboratory 0 0 2 1
9. EE102ES Basic Electrical Engineering Laboratory 0 0 2 1
Induction Program
Total 12 2 12 20

I Year II Semester

S. Course
Course L T P Credits
No. Code
1. MA201BS Ordinary Differential Equations and Vector Calculus 3 1 0 4
2. AP202BS Applied Physics 3 1 0 4
3. ME202ES Engineering Workshop 0 1 3 2.5
4. EN204HS English for Skill Enhancement 2 0 0 2
5. EC201ES Electronic Devices and Circuits 2 0 0 2
6. AP205BS Applied Physics Laboratory 0 0 3 1.5
7. CS201ES Python Programming Laboratory 0 1 2 2
8. EN207HS English LanguageLaboratory
and Communication Skills 0 0 2 1
9. CS203ES IT Workshop 0 0 2 1
10. *MC201ES Environmental Science 3 0 0 0
Total 13 4 12 20
 ELECTRONIC DEVICES AND CIRCUITS
[Link]. I Year II Sem. LTPC
2 0 0 2
Course Objectives:
1. To introduce components such as diodes, BJTs and FETs.
2. To know the applications of devices.
3. To know the switching characteristics of devices.
Course Outcomes: Upon completion of the Course, the students will be able to:
1. Acquire the knowledge of various electronic devices and their use on real life.
2. Know the applications of various devices.
3. Acquire the knowledge about the role of special purpose devices and their applications.
UNIT - I
Diodes: Diode - Static and Dynamic resistances, Equivalent circuit, Diffusion and Transition
Capacitances, V-I Characteristics, Diode as a switch- switching times.
UNIT - II
Diode Applications: Rectifier - Half Wave Rectifier, Full Wave Rectifier, Bridge Rectifier, Rectifiers
with Capacitive and Inductive Filters, Clippers-Clipping at two independent levels, Clamper-Clamping
Circuit Theorem, Clamping Operation, Types of Clampers.
UNIT - III
Bipolar Junction Transistor (BJT): Principle of Operation, Common Emitter, Common Base and
Common Collector Configurations, Transistor as a switch, switching times,
UNIT - IV
Junction Field Effect Transistor (FET): Construction, Principle of Operation, Pinch-Off Voltage,
Volt-Ampere Characteristic, Comparison of BJT and FET, FET as Voltage Variable Resistor,
MOSFET,MOSTET as a capacitor.
UNIT – V
Special Purpose Devices: Zener Diode - Characteristics, Zener diode as Voltage Regulator, Principle
of Operation - SCR, Tunnel diode, UJT, Varactor Diode, Photo diode, Solar cell, LED, Schottky diode.
TEXT BOOKS:
1. Jacob Millman - Electronic Devices and Circuits, McGraw Hill Education
2. Robert L. Boylestead, Louis Nashelsky- Electronic Devices and Circuits theory, 11th Edition,2009,
Pearson.
REFERENCE BOOKS:
1. Horowitz -Electronic Devices and Circuits, David A. Bell – 5thEdition, Oxford.
2. Chinmoy Saha, Arindam Halder, Debaati Ganguly - Basic Electronics-Principles and Applications,
Cambridge, 2018.
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC AUTONOMOUS INSTITUTION)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

Course: Electronic Devices and Circuits Class: I- B TECH- CSE(DATA SCIENCE)

Course Outcomes

After completing this course the student will be able to:

C125.1: Acquire the knowledge of diode with the help of V-I characteristics. (Understand)

C125.2: Analyze the applications of diode. (Analyze)

C125.3: Understand the principle of operation of BJT. (Understand)

C125.4: Know the characteristics of BJT under various biasing conditions. (Applying)
C125.5: Interpret the construction, operation and characteristics of FET. (Understand)

C125.6: Analyze the performance of special purpose devices and their applications. (Analyze)

Mapping of course outcomes with program outcomes:

High -3 Medium -2 Low-1

PO / CO PO 1 PO2 PO3 PO4 PO5 P PO PO PO PO PO1 PO12 PSO1 PSO2
O 7 8 9 10 1
6

C125.1 3 2 - - 3 - - - - - 2 3 3 3

C125.2 - 1 3 - - - 1 - - - 2 2 3 3

C125.3 1 3 - - 2 1 - - - - 2 - 3 3

C125.4 2 - 2 2 - - - - - - 2 3 3 3

C125.5 2 3 3 - 3 - - 1 - - 2 2 3 3

C125.6 3 3 - - 3 - - - 1 1 2 3 3 3

C125 2.20 2.40 2.67 2.00 2.75 1 1 1 1 1 2.00 2.60 3.00 3.00
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC AUTONOMOUS INSTITUTION)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

CO-PO mapping Justification

C125.1: Acquire the knowledge of diode with the help of V-I characteristics. (Understand)

Justification

PO1 Applying basic knowledge on Electronic Devices And Circuits students can solve basic circuit
problems.

PO2 Engineering problems often involve the proper utilization of diodes in electronic circuits.
Identifying issues related to diode behavior is crucial for effective problem-solving.

PO5 Acquiring knowledge of diode V-I characteristics through the use of modern simulation tools
aligns with PO Modern Tool Usage. The integration of simulation software enables engineers to
create, select, and apply appropriate techniques for predicting and modeling diode behavior.

PO11 Students can get demonstrate knowledge and understanding of the electronic devices and
circuits and apply these to one’s own project, as a member and leader in a team, to manage
projects and in multidisciplinary environments.

PO12 Students can continuously learning to explore more knowledge in semiconductor devices.

PSO1 Students are able to explore the design of electronic devices in the areas of VLSI design and
embedded systems.

PSO2 Students can solve the design problems of electronic devices using Keil and Xilinx.

C125.2: Analyze the applications of diode. (Analyze)

Justification

PO2 Students can analyze the rectifier, clippers, clamper Circuits using loop equations.

PO3 Students can design the different transistor configuration circuits.

PO7 Engineers focusing on sustainable development can leverage diodes and their applications to
design energy-efficient systems, develop renewable energy technologies, and create
environmentally friendly products.

PO11 Students can get demonstrate knowledge and understanding of the electronic devices and
circuits and apply these to one’s own project, as a member and leader in a team, to
manage projects and in multidisciplinary environments.
PO12 Students can continuously learning to explore more knowledge in semiconductor devices.

PSO1 Students are able to explore the design of electronic devices in the areas of VLSI design and
embedded systems.

PSO2 Students can solve the design problems of electronic devices using Keil and Xilinx.

C125.3: Understand the principle of operation of BJT. (Understand)

Justification

PO1 Understanding the principle of operation of a BJT involves the application of mathematics,
science, engineering fundamentals, and specialization in electronics.

PO2 Understanding the principle of operation of a BJT is crucial for problem analysis in electronic
engineering. By identifying, formulating, and analyzing complex engineering problems related to
BJT behavior, engineers can reach substantiated conclusions.

PO5 Applying simulation tools to visualize and analyze BJT characteristics, including V-I curves.

PO6 Engineers applying BJTs or any technology must assess the broader societal, health, safety, legal,
and cultural impacts of their work.

PO11 Students can get demonstrate knowledge and understanding of the electronic devices and
circuits and apply these to one’s own project, as a member and leader in a team, to manage
projects and in multidisciplinary environments.

PSO1 Students are able to explore the design of electronic devices in the areas of VLSI design and
embedded systems.

PSO2 Students can solve the design problems of electronic devices using Keil and Xilinx.

C125.4: Know the characteristics of BJT under various biasing conditions. (Applying)

Justification

PO1 Engineers must apply mathematical models, semiconductor physics, and circuit theory to solve
complex engineering problems related to BJT biasing and amplifier design.

PO3 The characteristics of BJTs under various biasing conditions play a crucial role in the design and
development of engineering solutions. Engineers need to consider these characteristics to design
system components or processes that meet specified needs, taking into account public health and
safety, as well as cultural, societal, and environmental considerations.

PO4 Engineers, through research-based knowledge, can conduct experiments, analyze data, and
synthesize information to draw valid conclusions about BJT behavior.

PO11 Students can get demonstrate knowledge and understanding of the electronic devices and
circuits and apply these to one’s own project, as a member and leader in a team, to manage
projects and in multidisciplinary environments.
PO12 Students can continuously learning to explore more knowledge in semiconductor devices.

PSO1 Students are able to explore the design of electronic devices in the areas of VLSI design and
embedded systems.

PSO2 Students can solve the design problems of electronic devices using Keil and Xilinx.

C125.5: Interpret the construction, operation and characteristics of FET. (Understand)

Justification

PO1 The knowledge of FET principles serves as a foundation for solving complex engineering
problems related to electronic circuits and systems.

PO2 Recognizing challenges in electronic circuit design and signal processing that involve FET
behavior.

PO3 Students, equipped with this knowledge, can design solutions for complex engineering problems,
create system components using FETs, and consider health, safety, environmental, cultural, and
societal factors in their designs.

PO5 Students can apply small signal model techniques in the design of FET amplifiers.

PO8 By understanding the construction, operation, and characteristics of FETs, engineers can
responsibly and ethically apply this technology.

PO11 Students can get demonstrate knowledge and understanding of the electronic devices and
circuits and apply these to one’s own project, as a member and leader in a team, to manage
projects and in multidisciplinary environments.

PO12 Students can continuously learning to explore more knowledge in semiconductor devices.

PSO1 Students are able to explore the design of electronic devices in the areas of VLSI design and
embedded systems.

PSO2 Students can solve the design problems of electronic devices using Keil and Xilinx.

C125.6: Analyze the performance of special purpose devices and their applications. (Analyze)

Justification

PO1 Students get the knowledge on special purpose devices like Zener, Tunnel, varactor diode,
UJT, SCR to simplify the complex circuits for analysis.

PO2 Stude Students can design the special purpose devices like Zener, Tunnel, varactor diode,
UJT, SCR .

PO5 Students can apply transistor hybrid model techniques in the design of BJT amplifiers.

PO9 Individuals equipped with expertise in the performance of these devices can effectively tackle
complex problems or challenges that require the utilization of such technology. They can provide
 innovative solutions by leveraging their understanding of device capabilities.

PO10 Understanding device performance allows engineers to provide clear and precise instructions for
integrating these devices into larger systems or for their specific applications.

PO11 Students can get demonstrate knowledge and understanding of the electronic devices and
circuits and apply these to one’s own project, as a member and leader in a team, to manage
projects and in multidisciplinary environments.

PO12 Understanding the performance of special purpose devices places learning within the broader
context of technological change.

PSO1 Students are able to explore the design of electronic devices in the areas of VLSI design and
embedded systems.

PSO2 Students can solve the design problems of electronic devices using Keil and Xilinx.
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC AUTONOMOUS INSTITUTION)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

LESSON PLAN

S.N Unit TOPIC Numbe Teaching REFERENCE

O r of method/Aids
Sessions
Planned

1. Introduction to diode 1 Black Board R1,T1,PPT

2. Static resistance and 1 Black Board R1,T1

dynamic resistances

3. Diode Equivalent circuits 1 Black Board R1,T1

4. 1 Diffusion Transition and 1 Black Board R1,T1

Capacitances

5. Volt Ampere Characteristic 1 Black Board R1,T1,PPT

of a diode

6. Diode as a switch 1 Black Board R1,T1,PPT

7. Diode switching times 1 Black Board R1,T1

8. Revision 1 Black Board R1,T1,T2

9. Half wave Rectifier 1 Black Board R2,T1,T2

10. Full Wave Rectifier 1 Black Board R1,T1,T2

11. 2 Bridge Rectifier 1 Black Board R2,T1

12. 2 Inductor Filters, Capacitor 1 Black Board R2,T1,T2

filters

13. Clipper-clipping at two 1 Black Board T2

independent levels

14. Clamping circuit theorem 1 Black Board T2

15. Clamping operation 1 Black Board T2

16. Types of clampers 1 Black Board T2

17. Problems on half wave and 1 Black Board T2,T1
Full wave Rectifier

18. Principle of Operation of 1 Black Board, T2,PPT

BJT PPT

19. Common emitter 1 Black Board T2,T1,PPT

Configuration
20. Efficiency calculation in CE 1 Black Board T2,W1

21. Common base 1 Black Board T2,PPT

configuration
3
22. Efficiency calculation in 1 Black Board T2,PPT
CB
23. Common collector 1 Black Board T2,T1,W1,PPT
configuration

24. Efficiency calculation in CC 1 Black Board T2,PPT

25. Transistor as switch Black Board T1

26. Transistor switching times Black Board T1

27. Junction Field Effect 1 Black Board T1,T2,W2

Transistor (FET)
Construction

28. Principle of Operation of 1 Black Board T1,T2,W2

FET
29. Pinch-Off Voltage, 1 Black Board T1,T2

30. Volt-Ampere 1 Black Board T1,T2,W2

Characteristic
31. 4 Comparison of BJT and 1 Black Board T1,T2,W2
FET
32. FET as Voltage Variable 1 Black Board T1,T2,W2
Resistor

33. MOSFET introduction 1 Black Board T1

34. Depletion mode MOSTET 1 Black Board T1

as a capacitor

35. Enhancement mode 1 Black Board T1,T2

36. MOSTET as a capacitor 1 Black Board T1

37. Special Purpose Devices 1 Black Board T1,T2,W3

introduction

38. Zener Diode - Characteristics 1 Black Board T1

 39. Zener diode as Voltage 1 Black Board T1,T2
Regulator
5
40. Principle of Operation - SCR 1 Black Board T1

41. Tunnel diode 1 Black Board T1

42. UJT 1 Black Board T1,T2

43. Varactor Diode 1 Black Board T1

44. Photo diode, Schottky diode 1 Black Board T1,T2

45. Solar cell,LED 1 Black Board T1,W3

TEXT BOOKS:
1. Jacob Millman - Electronic Devices and Circuits, McGraw Hill Education
2. Robert L. Boylestead, Louis Nashelsky- Electronic Devices and Circuits theory, 11th Edition,2009,
Pearson.
REFERENCE BOOKS:
1. Horowitz -Electronic Devices and Circuits, David A. Bell – 5thEdition, Oxford.
2. Chinmoy Saha, Arindam Halder, Debaati Ganguly - Basic Electronics-Principles and Applications,
Cambridge, 2018.
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC AUTONOMOUS INSTITUTION)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist., Telangana – 501510

WEB REFERENCES:

W1. [Link]

W2. [Link]
voltage-variable-resistor-vvr

[Link]://[Link]/basic_electronics/basic_electronics_special_purpose_diodes.h
tm

W4. [Link]
LED_Structures.pdf
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

LECTURE NOTES

UNIT – 1 Diodes

[Link]

UNIT-2 Diode Applications

[Link]

UNIT-3 Bipolar Junction Transistor (BJT)

[Link]

UNIT-4 Junction Field Effect Transistor (FET)

[Link]

UNIT-5 Special Purpose Devices

[Link]
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,Telangana –
501510

POWER POINT PRESENTATION LINKS

UNIT-1

[Link]

UNIT-2

[Link]
sharing
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

PREVIOUS QUESTION PAPERS

Link:

[Link]
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution) Set-I
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist., Telangana –
501510
I B. TECH II SEM I – MID Examinations, Jun-2023 BR22

Branch: ECE, CSE (A,B,C), IOT, AI&DS, DS,CS, AI&ML Date: 15-06-2023(FN)
Subject: ELECTRONIC DEVICES AND CIRCUITS Marks: 20 Time: 2 Hours

PART-B

Answer any FOUR Questions. All question Carry Equal Marks 4*5 =20 Marks

1 Explain the working of P-N Junction under forward bias &

Reverse bias? (C125.1) (Evaluating)
2 Define static & dynamic resistances? Derive the expression for (C125.1) (Remembering)
dynamic resistance?
3 Design the Equivalent circuit of Diode with brief explanation. (C125.1) (Applying)
4 Draw a circuit diagram of a Bridge full wave rectifier. Explain (C125.2) (Creating)
its working and draw the input and output waveforms?
5 Define clipper? Explain any two unbiased clippers with (C125.2) (Remembering)
waveforms?
6 Construct &Explain the operation of NPN Transistor? (C125.3) (Creating)

Question Paper Mapping with BT Question Paper Mapping

C125.3;with CO's
17%

C125.1;
50%

C125.2;
33%
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution) Set-I
Accredited by NAAC with A+ Grade
Recognized under 2(f) of UGC Act 1956. X3
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Sheriguda(V), Ibrahimpatnam(M), R.R Dist., Telangana – 501 510 BR22
I [Link] II SEM I-Mid Examinations, June-2023

Branch: ECE, CSE(A,B,C), IOT, AI&DS, DS, CS,AI&ML

Subject Name: Electronic Devices & Circuits
Student Name: ……………………………………. [Link].: ………………………….

Part-A
Objective/Quiz Paper:

The objective/quiz paper is set with multiple choice, fill-in the blanks and match the
following type of questions for a total of 10 marks.

Multiple choices:
1. How many Terminals does a P-N Junction Contains--------------- ( )
a) 3 b) 4 c) 2 d) 1
2. What is the cut-in voltage of silicon PN-Junction diode--------------- ( )

a) 0.3 b) 0.7 c) 1.1 d) 0.2

3. What is the efficiency of Half wave rectifier--------------------- ( )

a) 81.2% b) 40.6% c) 73.5% d) 78%

4. The number of depletion regions in a transistor--------------------- ( )
a) 3 b)2 c)4 d)1

Fill-in the blanks

1. The process of adding impurities to pure semiconductors is called________________.
2. The unwanted ac components present in the output of rectifier is called_____________.
3. Positive clipper circuit removes ___________________ portion of a wave forms .
4. In NPN transistor,_______________ are the minority carriers.
Match the following:

9.

i. Static Resistance ( ) a. Forward bias

ii. Dynamic Resistance ( ) b. Reverse bias
iii. Transition Capacitance ( ) c. V/I
iv. Diffusion Capacitance ( ) d. ΔV/ ΔI
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution) Set-I
Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Sheriguda(V), Ibrahimpatnam(M), R.R Dist., Telangana – 501 510 BR22
I [Link] II SEM I-Mid Examinations, June-2023
Subject Name: Electronic Devices & Circuits

ANSWER KEY

Descriptive paper key link:

[Link]
ring

Objective Key Paper

Multiple choices:
1. c
2. b
3. b

4. b

Fill in the blanks:

5. Doping
6. Ripples
7. Positive
8. Electrons

Match the following:

9.
i. c
ii. d
iii. b
iv. a
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution) Set-II
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510
I B. TECH II SEM II – MID Examinations, August-2023
BR22
Branch: ECE, CSE(A,B,C), IOT, AI&DS, DS, CS,AI&ML Date: 18-08-2023(FN)
Subject: ELECTRONIC DEVICES AND CIRCUITS Marks: 20 Time: 2 Hours

PART-B
Answer any FOUR Questions. All question Carry Equal Marks 4*5 =20 Marks

1 Explain how the transistor acts as a switch ? (C125.3) (Understanding )

2 Distinguish Between BJT & JFET? (C125.5) (Analyzing)

3 Discuss the V-I characteristics of JFET? (C125.5) (Creating )

4 Compare JFET & MOSFET? (C125.5) (Analyzing )

5 Define UJT ? Explain the operation of UJT? (C125.6) (Remembering)

6 Demonstrate the construction &Working of Photo Diode? (C125.6) (Understanding )

Question Paper Mapping with BT Question Paper Mapping

with CO's
C125.3;
17%
C125.6;
33%

C125.5;
50%
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution) Set-II
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510
I [Link] II SEM II-Mid Examinations, August-2023
Branch: ECE, CSE(A,B,C), IOT, AI&DS, DS,CS, AI&ML
BR22
Subject Name: Electronic Devices & Circuits
Student Name: ……………………………………. [Link].: ………………………….

Part-A
Objective/Quiz Paper:
The objective/quiz paper is set with multiple choice, fill-in the blanks and match the
following type of questions for a total of 10 marks.

Multiple choices:

1. What is the input terminal of CB Configuration? ( )

a) Base b) Collector c) Emitter d) None of the above
2 How many P-Regions are present in N-Channel MOSFET? ( )
a) 2 b)3 c)4 d)1
3. A JFET has three terminals, namely …………. ( )
a)cathode, anode, grid b) emitter, base, collector c)source, gate, drain d)None of the
Above
4. Zener diode is used as ( )
a) An Amplifier b)A Voltage Regulator c)A Coupler d)A Rectifier
Fill-in the blanks
1. The relation between α &β is ________________.
2. The input impedance of MOSFET is________________ than the JFET.
3. The Zener diode is always operated in_________________.
4. Write the Terminals of UJT__________________________________.
Match the following:
9.
i. Zener Diode ( ) a) Variable Capacitor
ii Varactor Diode ( ) b) Optical Source
iii UJT ( ) c) Voltage Regulator

iv LED ( ) d)Uni Junction Transistor

 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution) Set-II
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

I [Link] II SEM II-Mid Examinations, August-2023

Subject Name: Electronic Devices & Circuits

ANSWER KEY

Descriptive paper key link:

[Link]

Objective Key Paper

Multiple choices:
1. c
2. d
3. c
4. b

Fill in the blanks:

5. α=β/1+β ;β=α/1-α
6. More
7. Reverse Bias
8. Base1; Base2;Emitter

Match the following:

9.
i. c
ii. a
iii. d
iv. b

Mid-1 & Mid-2student answer scripts :

[Link]
g

[Link]
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

ASSIGNMENT QUESTIONS (MID-I)

ELECTRONIC DEVICES AND CIRCUITS (SEM-II)

1 Explain the working of P-N Junction under forward bias & (C125.1) (Comprehension)
Reverse bias?

2 Define static & dynamic resistances? Derive the expression (C125.1) (Knowledge)
for dynamic resistance?

3 What is meant by diffusion & Transition Capacitances? (C125.1) (Remembering)

Derive the expression for diffusion capacitance?

4 Discuss equivalent circuit of Diode? (C125.1) (Creating )

5 Draw a circuit diagram of a Bridge full wave rectifier. (C125.2)

Explain its working and draw the input and output
waveforms? (Knowledge)

6 Derive the Efficiency of half-Wave rectifier? (C125.2) (Remembering)

7 Discuss any two unbiased clippers with waveforms? (C125.2) (Creating )

8 Explain the operation of Capacitor-Filter with neat (C125.2) (Comprehension)

diagrams?

9 Explain the construction and operation of NPN Transistor? (C125.3) (Comprehension)

10 Explain the input and output characteristics of Transistor in (C125.3) (Comprehension)

CE configuration.
 Assignment Questions
mapping with CO's

C125.3
20%
C125.1
40%

C125.2
40%

Assignment Questions
mapping with BT
Rememb
ering
20%

Compreh
ension
Creating 40%
20%

Knowled
ge
20%

MID-1 Assignment link :

[Link]
iew?usp=sharing
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

ASSIGNMENT QUESTIONS (MID-II)

ELECTRONIC DEVICES AND CIRCUITS (SEM-II)

1 Compare CB, CE, CC configurations? (C125.4) (Analyzing)

2 Explain how the transistor acts as a switch ? (C125.3) (Comprehension)

3 Discuss Switching times of a Transistor? (C125.3) (Creating )

4 Distinguish Between BJT & JFET? (C125.5) (Analyzing )

5 Explain the Construction & Working of N-Channel JFET? (C125.5) (Comprehension)

6 Discuss the V-I characteristics of JFET? (C125.5) (Creating )

7 Compare JFET & MOSFET? (C125.5) (Analyzing)

8 Explain how the MOSFET acts as a Capacitor ? (C125.5) (Comprehension)

9 Explain the Working & V-I Characteristics of Zener Diode? (C125.6) (Comprehension)

10 Explain the Construction & Working of Varactor Diode? (C125.6) (Comprehension)

11 Discuss the working conditions of Tunnel Diode? (C125.6) (Creating )

12 Define UJT ? Explain the operation of UJT? (C125.6) (Remembering)

13 Demonstrate the construction &Working of Photo Diode? (C125.6) (Understanding )

 Assignment Questions
mapping with CO's

C125.3
16%
C125.6 C125.4
38% 8%

C125.5
38%

Assignment Questions
Understa
nding
mapping with BT
8%

Rememb
ering
8%
Compreh
ension
38%
Analyzing
23%

Creating
23%

MID -2 Assignment

[Link]
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

SCHEME OF EVALUATION FOR MID 1

BLOOMS
[Link]. DESCRIPTION MARKS TAXONOMY CO
Working Principle of PN Junction 3
1 PN Junction Forward bias, Reverse bias (C125.1)
(Evaluating)
connection diagrams 2
Definition for Static ,dynamic resistances 2
2 (Remembering) (C125.1)
Derivation for Static ,dynamic resistances 3
Explanation for Equivalent circuit 2
3 (Applying) (C125.1)
Diagrams for Equivalent circuit 3
Bridge full wave rectifier circuit diagram,
4 waveforms 2.5 (Creating) (C125.2)
Bridge full wave rectifier working principle 2.5
Definition, Working of Clippers 2.5
5 (Remembering) (C125.2)
circuit diagram, waveforms of clippers 2.5
NPN Transistor Construction 2
6 (Creating) (C125.3)
NPN Transistor Working 3

SCHEME OF EVALUATION FOR MID2

BLOOMS
[Link]. DESCRIPTION MARKS TAXONOMY CO
For circuit diagram OF transistor 3
1 (C125.3)
(Understanding )
Derivation Part 2
Explanation for BJT 2.5
2 (Analyzing) (C125.5)
Explanation for JFET 2.5
JFET V-I characteristics waveform, Circuit
3 diagram of JFET 3 (Creating ) (C125.5)
Explanation of JFET 2

4 Explanation for MOSFET 2.5 (Analyzing ) (C125.5)

Explanation for JFET 2.5
Circuit diagram, symbol of UJT 2.5
5 (Remembering) (C125.6)
Operation of UJT 2.5
Photo diode symbol, Construction 2
6 (Understanding ) (C125.6)
Working Principle 3
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

Result Analysis: CSE(DATA SCIENCCE)

Course Title ELECTRONIC DEVICES & CIRCUITS

Course Code EC201ES
Programme [Link]
Year & Semester Ist year 2nd semester
Regulation R22
Course Faculty Mrs. P. SUMANA, Assistant Professor , ECE

Weak Students:

S No Roll no No of backlogs Internal-I Status Internal-II Status

(35Marks) (40Marks)
1 22X31A6702 3 18 23

2 22X31A6705 2 17 26

3 22X31A6706 5 11 1

4 22X31A6708 2 24 20

5 22X31A6714 4 14 15

6 22X31A6722 2 19 21

7 22X31A6729 4 25 16

8 22X31A6730 2 25 19

9 22X31A6739 2 18 21

10 22X31A6740 1 14 14

11 22X31A6741 4 15 24

12 22X31A6742 2 24 24
Advanced learners:

S No Roll No Type of support provided

1 22X31A6701

2 22X31A6703 Advanced concepts materials is provided for advanced

3 22X31A6704 learners, Subject seminars are presented by advanced learners

in the class, advanced learners are encouraged to support slow
4 22X31A6707
learners.
5 22X31A6711

6 22X31A6715

7 22X31A6718

8 22X31A6724

9 22X31A6725

10 22X31A6726

11 22X31A6733

12 22X31A6734

13 22X31A6736

14 22X31A6745

15 22X31A6746

16 22X31A6747

17 22X31A6750

18 22X31A6751

19 22X31A6759

20 22X31A6760

21 22X31A6762
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC Autonomous Institution)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad)
Khalsa Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist.,
Telangana – 501510

RESULT ANALYSIS AT THE END OF SEMISTER

Branch: CSE(DATA SCIENCE)

Subject: ELECTRONIC DEVICES & CIRCUITS

ELECTRONIC DEVICES & CIRCUITS

58
PASS FAIL ABSENT

4
1

ABSENT
2%

FAIL
6%

PASS
92%
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC AUTONOMOUS INSTITUTION)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad) Khalsa
Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist., Telangana – 501510

DEPARTMENT OF HUMANITIES AND SCIENCE

REMEDIAL CLASSES TIME TABLE

DAY/ MON TUE WED THUR FRI SAT

PERIOD 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00
CSE-A ODE&VC ENG EDC AP ODE&VC AP
CSE-B AP EDC ODE&VC ENG EDC ENG
CSE-C ENG AP EDC ODE&VC AP ODE&VC

DAY/ MON TUE WED THUR FRI SAT

PERIOD 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00
DS EDC AP ODE&VC ENG EDC ODE&VC
CYBER ENG EDC AP ODE&VC AP ENG

DAY/ MON TUE WED THUR FRI SAT

PERIOD 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00
AIML-A ODE&VC EC EDC BEE EC ODE&VC
AIML-B BEE EDC ODE&VC EC BEE EDC

DAY/ MON TUE WED THUR FRI SAT

PERIOD 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00
AI&DS BEE EC ODE&VC EDC BEE EC
IOT EC ODE&VC EDC BEE ODE&VC EDC

DAY/ MON TUE WED THUR FRI SAT

PERIOD 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00 4.00-5.00
ECE ODE&VC BEE EC EDC BEE EC
CIVIL ODE&VC BEE EC AM BEE EC
SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
Department of Humanities & Sciences
Course Outcome Attainment (Internal Examination-1)
Name of the [Link]
: Academic Year: 2022-2023
Branch & Section: CSE(DS) Examination: I Internal
Course Name: EDC Year:I Semester:
II
[Link] HT No. Q1a Q1b Q2a Q2b Q3a Q3b Q4a Q4b Q5a Q5b Q6a Q6b Obj1 A1
Max. Marks ==> 5 5 5 5 5 5 10 5
1 22X31A6701 4.5 5 3 4.5 8 5
2 22X31A6702 1 2 1 1 8 5
3 22X31A6703 5 5 3 5 7 5
4 22X31A6704 5 5 5 5 10 5
5 22X31A6705 1 4 2 2 3 5
6 22X31A6706 1 5 5
7 22X31A6707 5 5 5 5 10 5
8 22X31A6708 3 4 2 0 10 5
9 22X31A6709 2 5 2 5
10 22X31A6710 3 3 8 5
11 22X31A6711 5 5 4.5 4.5 9 5
12 22X31A6712 1 1 1 1 9 5
13 22X31A6713 2 0 1 7 5
14 22X31A6714 0.5 0.5 1 7 5
15 22X31A6715 4 5 4 4 10 5
16 22X31A6716 4 2 2 3 10 5
17 22X31A6717 3 2 1 2 10 5
18 22X31A6718 5 5 5 5 10 5
19 22X31A6719 5 2 4 2 10 5
20 22X31A6720 5 5 5 5 9 5
21 22X31A6721 3 3 5 3 9 5
22 22X31A6722 2 0 2 1 9 5
23 22X31A6723 2 4 1 9 5
24 22X31A6724 5 5 5 5 10 5
25 22X31A6725 4 5 5 4 10 5
26 22X31A6726 5 5 4 4 10 5
27 22X31A6727 3 5 3 3 10 5
28 22X31A6728 4 4 2 2 9 5
29 22X31A6729 2 3 3 2 10 5
30 22X31A6730 3 3 2 2 10 5
31 22X31A6731 4 4 3 3 10 5
32 22X31A6732
33 22X31A6733 5 5 5 5 10 5
34 22X31A6734 5 5 5 5 10 5
35 22X31A6736 5 5 5 5 10 5
36 22X31A6737 5 4.5 1 2.5 9 5
37 22X31A6738 5 0 1 3 8 5
38 22X31A6739 2 0 2 9 5
39 22X31A6740 0 9 5
40 22X31A6741 1 9 5
41 22X31A6742 4 4 1 10 5
42 22X31A6743 5 5 5 5 10 5
 43 22X31A6744 4 3 3 3 10 5
44 22X31A6745 5 5 5 5 10 5
45 22X31A6746 2 5 4 3 10 5
46 22X31A6747 5 5 5 5 9 5
47 22X31A6748 4.5 5 4.5 4 10 5
48 22X31A6749 2 4 2 10 5
49 22X31A6750 4 5 5 4 9 5
50 22X31A6751 5 4 2 4 9 5
51 22X31A6752 1 0 0 0 7 5
52 22X31A6753 2 0 0 8 5
53 22X31A6754 4.5 5 5 4.5 8 5
54 22X31A6755 3 3 3 3 8 5
55 22X31A6756 0 0 9 5
56 22X31A6757 1 9 5
57 22X31A6758 0 10 5
58 22X31A6759 5 5 5 5 10 5
59 22X31A6760 5 5 5 5 10 5
60 22X31A6761 3 1 1 1 8 5
61 22X31A6762 4 5 5 4 10 5
62 22X31A6763 3 4 3.5 1.5 9 5
63 22X31A6764 4 5 4 5 10 5
Target set by the
3.00 0.00 3.00 0.00 3.00 0.00 3.00 0.00 3.00 0.00 3.00 0.00 6.00 3.00
faculty / HoD
Number of
students performed 37 0 41 0 25 0 20 0 9 0 19 0 59 62
above the target

Number of 57 0 51 0 30 0 37 0 18 0 27 0 62 62
students attempted
Percentage of
students scored 65% 80% 83% 54% 50% 70% 95% 100%
more than target
CO Mapping with Exam Questions:
CO - 1 Y Y Y Y
CO - 2 Y Y Y Y Y
CO - 3 Y Y Y
CO - 4
CO - 5
CO - 6
% Students Scored
>Target % 65% 80% 83% 54% 50% 70% 95% 100%
CO Attainment based on Exam Questions:
CO - 1 65% 80% 95% 100%
CO - 2 83% 54% 70% 95% 100%
CO - 3 50% 95% 100%
CO - 4
CO - 5
CO - 6

CO Subj obj Asgn Overall Level Attainment Level

CO-1 73% 88% 100% 87% 3.00 1 40%
CO-2 69% 76% 100% 82% 3.00 2 50%
CO-3 50% 73% 100% 74% 3.00 3 60%
CO-4
CO-5
CO-6
Attainment (Internal 1 Examination)
3.00 =
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
Department of Humanities & Sciences
Course Outcome Attainment (Internal Examination-2)
Name of the [Link]
: Academic Year: 2022-2023
Branch & Section: CSE(DS) Examination: II Internal
Course Name: EDC Year:I Semester: II
viva/
[Link] HT No.
Q1a Q1b Q2a Q2b Q3a Q3b Q4a Q4b Q5a Q5b Q6a Q6b
Obj A2
ppt
Max. Marks ==> 5 5 5 5 5 5 10 5 5
1 22X31A6701 4 5 3 3 8 5 5
2 22X31A6702 3 4 3 9 4 5
3 22X31A6703 5 5 4 5 10 5 5
4 22X31A6704 5 5 5 5 10 5 5
5 22X31A6705 3 5 3 2 8 5 5
6 22X31A6706 1 1 2 1 9 4 5
7 22X31A6707 5 5 2 4 10 5 5
8 22X31A6708 3 1 1 2 9 4 5
9 22X31A6709 3 2 1 10 5 5
10 22X31A6710 4 4 1 9 4 5
11 22X31A6711 5 5 5 5 10 5 5
12 22X31A6712 4 2 1 2 9 5 5
13 22X31A6713 4 3 3 10 5 5
14 22X31A6714 1 1 1 9 3 5
15 22X31A6715 5 5 2 5 10 5 5
16 22X31A6716 3 3 1 3 10 5 5
17 22X31A6717 2 1 1 9 5 5
18 22X31A6718 5 5 5 5 10 5 5
19 22X31A6719 3 5 3 9 5 5
20 22X31A6720 5 4 5 4 10 5 5
21 22X31A6721 2 3 1 3 10 5 5
22 22X31A6722 2 1 2 2 10 4 5
23 22X31A6723 3 2 2 8 5 5
24 22X31A6724 5 5 5 5 10 5 5
25 22X31A6725 3 4 2 4 9 5 5
26 22X31A6726 4 4 5 5 10 5 5
27 22X31A6727 2 3 1 10 5 5
28 22X31A6728 2 2 3 3 9 3 5
29 22X31A6729 3 2 2 5 4 5
30 22X31A6730 3 1 1 2 9 3 5
31 22X31A6731 5 5 3 4 10 5 5
32 22X31A6732
33 22X31A6733 5 5 5 5 9 5 5
34 22X31A6734 5 5 4 4 10 5 5
35 22X31A6736 5 5 5 5 10 5 5
36 22X31A6737 3 4 3 3 8 5 5
37 22X31A6738 3 4 2 3 10 4 5
38 22X31A6739 5 3 10 3 5
39 22X31A6740 1 1 9 3 5
40 22X31A6741 4 3 3 9 5 5
41 22X31A6742 2 4 4 3 9 3 5
42 22X31A6743 5 2 5 4 10 5 5
43 22X31A6744 5 3 5 4 10 5 5
44 22X31A6745 5 5 5 5 10 5 5
 45 22X31A6746 4 4 2 4 10 5 5
46 22X31A6747 5 5 5 5 10 5 5
47 22X31A6748 3 4 4 3 10 5 5
48 22X31A6749 5 3 2 10 1 5
49 22X31A6750 5 4 5 4 10 5 5
50 22X31A6751 4 5 5 9 5 5
51 22X31A6752 2 1 10 4 5
52 22X31A6753 2 1 9 5 5
53 22X31A6754 5 4 5 4 10 5 5
54 22X31A6755 3 4 1 2 10 5 5
55 22X31A6756 4 4 4 10 4 5
56 22X31A6757 1 1 8 5 5
57 22X31A6758 3 3 2 9 4 5
58 22X31A6759 5 5 5 5 10 5 5
59 22X31A6760 4 5 5 5 10 5 5
60 22X31A6761 3 3 4 1 10 5 5
61 22X31A6762 4 5 2 5 10 3 5
62 22X31A6763 4 4 3 8 5 5
63 22X31A6764 3 4 3 4 9 5 5
Target set by the
3.00 0.00 3.00 0.00 3.00 0.00 3.00 0.00 3.00 0.00 3.00 0.00 6.00 3.00 3.00
faculty / HoD

Number of
students performed 34 0 47 0 13 0 42 0 3 0 24 0 61 13 62
above the target

Number of 42 0 60 0 27 0 56 0 4 0 33 0 62 13 62
students attempted
Percentage of
students scored 81% 78% 48% 75% 75% 73% 98% 100% 100%
more than target
CO Mapping with Exam Questions:
CO - 1 Y
CO - 2 Y
CO - 3 Y Y Y Y
CO - 4 Y Y Y Y
CO - 5 Y Y Y Y Y
CO - 6 Y Y Y Y Y

% Students Scored
>Target % 81% 78% 48% 75% 75% 73% 98% 100% 100%
CO Attainment based on Exam Questions:
CO - 1 100%
CO - 2 100%
CO - 3 81% 98% 100% 100%
CO - 4 48% 98% 100% 100%
CO - 5 75% 75% 98% 100% 100%
CO - 6 78% 73% 98% 100% 100%

CO Subj obj asgn ppt Overall Level Attainment Level

CO-1 100% 100% 3.00 1 40%
CO-2 100% 100% 3.00 2 50%
CO-3 81% 98% 100% 100% 95% 3.00 3 60%
CO-4 48% 98% 100% 100% 87% 3.00
CO-5 75% 98% 100% 100% 93% 3.00
CO-6 76% 98% 100% 100% 93% 3.00
Attainment (Internal Examination-2)
3.00=
SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
Department of Humanities & Sciences
Course Outcome Attainment (University Examinations)
Name of the faculty : [Link] Academic Year: 2022-2023
Branch & Section: CSE(DS) Year / Semester: I / II
Course Name: EDC
[Link] Roll Number Marks Secured [Link] Roll Number Marks Secured
1 22X31A6701 32 #REF! 36 22X31A6737 47
2 22X31A6702 30 #REF! 37 22X31A6738 40
3 22X31A6703 32 #REF! 38 22X31A6739 46
4 22X31A6704 44 #REF! 39 22X31A6740 22
5 22X31A6705 36 #REF! 40 22X31A6741 22
6 22X31A6706 16 #REF! 41 22X31A6742 33
7 22X31A6707 32 #REF! 42 22X31A6743 32
8 22X31A6708 26 #REF! 43 22X31A6744 34
9 22X31A6709 24 #REF! 44 22X31A6745 53
10 22X31A6710 22 #REF! 45 22X31A6746 38
11 22X31A6711 39 #REF! 46 22X31A6747 49
12 22X31A6712 25 #REF! 47 22X31A6748 32
13 22X31A6713 24 #REF! 48 22X31A6749 6
14 22X31A6714 27 #REF! 49 22X31A6750 38
15 22X31A6715 47 #REF! 50 22X31A6751 30
16 22X31A6716 26 #REF! 51 22X31A6752 21
17 22X31A6717 28 #REF! 52 22X31A6753 22
18 22X31A6718 43 #REF! 53 22X31A6754 51
19 22X31A6719 25 #REF! 54 22X31A6755 26
20 22X31A6720 41 #REF! 55 22X31A6756 36
21 22X31A6721 32 #REF! 56 22X31A6757 14
22 22X31A6722 34 #REF! 57 22X31A6758 3
23 22X31A6723 26 #REF! 58 22X31A6759 49
24 22X31A6724 40 #REF! 59 22X31A6760 52
25 22X31A6725 32 #REF! 60 22X31A6761 26
26 22X31A6726 32 #REF! 61 22X31A6762 35
27 22X31A6727 29 #REF! 62 22X31A6763 25
28 22X31A6728 28 #REF! 63 22X31A6764 31
29 22X31A6729 35 #REF! 64
30 22X31A6730 39 #REF! 65
31 22X31A6731 48 #REF! 66
32 22X31A6732 #REF! 67
33 22X31A6733 42 #REF! 68
34 22X31A6734 40 #REF! 69
35 22X31A6736 44 #REF! 70
Max Marks 60
Class Average mark 32 Attainment Level % students
Number of students performed above the target 36 1 40%
Number of successful students 62 2 50%
Percentage of students scored more than target 58% 3 60%
Attainment level 3
 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
Department of Humanities & Sciences
Course Outcome Attainment
Name of the faculty :[Link] Academic Year: 2022-2023
Branch & Section: CSE(DS) Examination: Internal
Course Name: EDC Year: I
Semester: II
1st
Course Outcomes Internal 2nd Internal Internal
Exam Exam Exam University Exam Attainment Level

CO1 3.00 3.00 3.00 3.00

3.00
CO2 3.00 3.00 3.00 3.00
3.00

CO3 3.00 3.00 3.00 3.00

3.00
CO4 3.00 3.00 3.00
3.00
CO5 3.00 3.00 3.00
3.00
CO6 3.00 3.00 3.00
3.00
Internal & University Attainment: 3.00 3.00

Weightage 25% 75%

CO Attainment for the course (Internal, University) 0.75 2.25

CO Attainment for the course (Direct Method) 3.00

Overall course attainment level 3.00

SRI INDU INSTITUTE OF ENGINEERING & TECHNOLOGY
Department of Humanities & Sciences
Program Outcome Attainment (from Course)
Name of Faculty: [Link] Academic Year: 2022-2023
Branch & Section: CSE(DS) Year: I
Course Name: EDC Semester: II
CO-PO mapping
PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12 PSO1 PSO2
CO1 3 2 - - 3 - - - - - 2 3 3 3
CO2 - 1 3 - - - 1 - - - 2 2 3 3
CO3 1 3 - - 2 1 - - - - 2 - 3 3
CO4 2 - 2 2 - - - - - - 2 3 3 3
CO5 2 3 3 - 3 - - 1 - - 2 2 3 3
CO6 3 3 - - 3 - - - 1 1 2 3 3 3
Course 2.2 2.4 2.67 2 2.75 1 1 1 1 1 2 2.6 3 3
CO Course Outcome Attainment
3.00
CO1
3.00
CO2
3.00
CO3
3.00
CO4
3.00
CO5
3.00
CO6
Overall course attainment level 3.00

PO-ATTAINMENT
PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12 PSO1 PSO2
CO
Attainm
ent 2.20 2.40 2.67 2.00 2.75 1.00 1.00 1.00 1.00 1.00 2.00 2.60 3.00 3.00

CO contribution to PO - 33%, 67%, 100% (Level 1/2/3)

 SRI INDU INSTITUTE OF ENGINEERING AND TECHNOLOGY
(UGC AUTONOMOUS INSTITUTION)
Accredited by NAAC A+ Grade, Recognized under 2(f) of UGC Act 1956.
(Approved by AICTE, New Delhi and Affiliated to JNTUH, Hyderabad ) Khalsa
Ibrahimpatnam, Sheriguda(V), Ibrahimpatnam(M), Ranga Reddy Dist., Telangana – 501510

ATTENDANCE REGISTER

[Link]