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Roll No. 2.3!EKGRAL9
BE I(ECE)
14 Bas. Ele.
FIRST B.E. EXAMINATION - 2023
ISEMESTER
ECE -155 A: BASIC ELECTRONICS
Time - Three Hours
Maximum Marks - 100
Note:- (i) Attempt any FIVE questions.
(ii) Answer should be to the point.
(ii) All questions carry equal marks.
1. (a) Explain the construction and working of wire
wound resistors. Also give the difference between
wire - wound and carbon resistor. 10
(b) Explain the working of electrolyte capacitor with
suitable diagram. Explain the types of capacitor.
10
2. (a) Explain the construction and working of full wave
rectifier. Sketch all the input, output and capacitor
wave form. 10
(b) What do you understand by regulated power
supply. Also draw the block diagram and explain
it. 10
J-1035 (Contd.)
J-1035 7. 4. 3
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(i) (b) (a) (b) (a) (b) (a) (b) (a)

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of the and
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Multimeters of on voltmeters.
explain explain bias draw
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types electronic negative resistor explain
bothzener workingreverse
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bandwidth diode of V-l
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heterodyne
receiver. system.
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BJT. diode.
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(3) Reverse saturation current positive and negative
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soxplain the forward and reverse bias
cond1tion for a pn
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rectifier
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(I) and
and derive the expression for averagedc current with step down transformer of ratio 10:1. Rusistie lcad
10
RMS load current (M) connected is 10 k2. The diode forward resistarce is 752
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= i Photo diode (Y Light Emitting Diode
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5
Z.(a) What is the condition for sustained oscillations with neat
501uA. Compute the value ofa, I and I,. circuit diagrams. Explain the working of Hartley
(c) Sketch the drain and transfer characteristic of n - channel Oscillator.
5
JFET. (b) Draw the block diagram of super hetrocvre radio receiver
and state the function of each Block.
Ata Define Amplitude Modulation and derive the expression
for Standard Amplilade Modulation. Also define (c) Write the difference between JFET and MOSFET.
Modulation Index. 10

(b Explain how the transistor can be used as a switch and as

an amplifier. 10

S.(a) Explain the construction and operation of n-channel JFET

with necessary diagram. 10
(Contd.) 4454 3
4454 2
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9 Basic !e.

First B.E. EXAMINATION - 2019

(SECOND SEMESTER)
ECE - 155A : BASIC ELECTRONCN

Time-Three Hours
Maximum MarkS - 100

Note:- () Attempt any FIVE questions.

e
(2) Marks allotted to each part of the jueticn
indicated on the righi side.

1. (2) Mentionvarious types of [Link] the hel;

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of neat diagram, explain the construcika:
elcctrolytic capacitor.
concuction ui
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insulators, semiconductors and cordwteis.
showing the encrgy band diagran1s.

4114
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- Using suitable circuit arrangement,
working ofaZener diode. 8 voltage by a digital voltmeter giving su'able
characteristics and diagran1.
Give he construction,
applications ofSiliconControlled Rectifier. 12 (b) Why multistage amplifiers are reyuired' Fapiain
Draw the h - parameter cquivalent of a transistor. the function ofR-C coupled arnplier.
Derive the formula in terms ofh - paramcters of a Write technical notes on (ANYTWWO)o: thc t llowing:
transister. Determine the formula in terms of h -
Photo diode andLED
parameters for (i)Current gain (ii) Voltage gain.
(b) [Link]
12

What are the adantages ofFET over BJT?

(c) Shunt Regulator
(b)

4 Explain the working of bridge rectifier and also

y T.V. Receiver
calculate its ripple factor for sinusoidal input. 10 (e) Gang Capacitor
Explain the working principle of AM
Superheterodyne ratio receiver by giving the
simple block diagram. 10

5 Draw the block diagram of a CRO and explain the

function of cachblock. 10

Obtain expression for overall voltage gain of an

anplifierwith negative feed-back. 10

4|14 2 (Contd.) 4114 3

"Do not write anything on question-paper except Roll
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RollNo..[Link] Qofo
Ist B.E
Basic Ele.

FIRST B.E. (FIRST SEMESTER)

(NEW SCHEME) EXAMINATION - 2019
ECE-155A: BASIC ELECTRONICS
Time-Three Hours
Maximum Marks - 100

Note:- (1) Answer any FIVE question.

(2) Marks allotted to each part the questions are
indicatdon the right side.
(a) Name various factors that determine the
resistance ofa wire-wound resistor. 6

(b) Differentiate between crack-carbon and Film

type resistors end eiaborate their manufacturing
process. 4+10

2. (a) Compare the performance of bridge rectifier and

two diode full wave rectifier. Derive the
expression for ripple factor and efficiency of full
wave rectifier. 4+6

3664 (Contd.)
 (b) Explain how Zener diode can be used as a voltage (c) An input of the millivolt is applied to a voltage
regulator. Discuss the features of a regulated amplifier. The output of this amplifier is 109
power supply. 6+4 millivolt. Calculate its voltage gain in decibel. 4
(a) Using suitable block diagram explain the
(a) With the help of internal structure explain- the
principle of television transmission.
working of LED and drawits V-Icharacteristics.
6+4 (b) What do you understand by an intrinsic and
exptrinsic semiconductor? Give the schematic
(b) Give the .circuit configuration and explain the
working of weir bridge or R-C phase shift sine representation of energy-band diagrams of
wave oscillator. 10 following
i) Intrinsic semi conductor
(a) By giving the block diagram of a super
heterodyne radic receiver, describe the principle (ii) n-type seni. conductors
of its working and also draw wave forms at its (111) p-type semi conductor
different stages. 10+2 Write short notes on any two
(b) Draw the neat diagram of Cathode ray tube and (a) DVM 10
explain its operation. (b) Ratings ofp-n junction diode 10
(a) Describe the theory of BJT and explain how does (c) Comparison betweenAM and FM 10
it amplify the signal. 6
(d) SCR 10
(b) Draw the frequency response characteristics of a (e) MOSFET 10
voltage amplifier. Explain the terms
() Mid-band gain
(ii) Lower cut-off frequency
(ii) Higher cut-off frequency
(iv) Band width 10
3664 2 (Contd.) 3664 3
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RollNo. LIBCAL9664
1" B.E.
9 Basic Ece.

FIRST B.E. (FIRST SEMESTER)

(NEW SCHEM E)EXAMINATION - 2017
ECE-155 A: BASIC ELECTRONICS
Time -Three Hours
Maximum Marks : 100
Note :- (1)Answer any FIVE questions.
(2) Marks alloted to each part of the question are
indicated on the right side.
1.(a) Describe the construction and characteristics of
Electrolytic capacitor. Mention its applications. 6+4+2
(b) Aresistor hasacolourband sequence as:
Ýellow Violet Orange Silver
Find out the value ofresistance and its range in which it
2+2
maylie?
with 5%
(c) Find the colour code of the following resistor
tolerance.
(i)) 0.33 ohm 2+2
breakdown
a) Explain how the process of avalanche
occurs in a P-N junction diode? How is it ditBerent from
Zener breakdown? Also explain with a diagram how
Zener diode can be used as a reference voltage source?
4+3+5

bY Explain the working of SCR using a circuit diagram.

8213 (Contd.)
 8213 6.(a)
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(b)
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Ist B.E.
9
Basic Ece.
First B.E. Examination, 2016
(Second Semester)
ECE-155 A : BASIC ELECTRONICS
Time - Three Hours
Maximum Marks : 100
Note:- (1) Attempt any FIVE questions.
(2) Marks allotted to each part of the question are
indicated on the right side.

1. Explain the following characteristics ofresistors:

(a) Temperature coefficient
(b)Voltage coeficient
(c) High frequency characteristics
(d) Electrical noise
(e) Tolerence 4x5-20

) Explain the qualitative theory of PN Junction. Discuss

the small signal and Large signal V-I characteristics of
PN Junction. 6+4
7336 1 (Contd.)
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(i) ) (ii) (i) (Draw Ki) )
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explain briet.
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