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Semiconductor Bias and Rectifier Basics

The document discusses the characteristics of semiconductors, particularly n-type and p-type, and their behavior under forward and reverse bias conditions. It explains the properties of diamond as an insulator due to its high energy gap and describes the function of rectifiers in converting pulsating DC to steady DC. Additionally, it includes information on knee voltage for silicon and germanium, and the relationship between electron and hole concentrations in intrinsic and doped semiconductors.

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soorya kiran
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5 views10 pages

Semiconductor Bias and Rectifier Basics

The document discusses the characteristics of semiconductors, particularly n-type and p-type, and their behavior under forward and reverse bias conditions. It explains the properties of diamond as an insulator due to its high energy gap and describes the function of rectifiers in converting pulsating DC to steady DC. Additionally, it includes information on knee voltage for silicon and germanium, and the relationship between electron and hole concentrations in intrinsic and doped semiconductors.

Uploaded by

soorya kiran
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

In forward bias , resistance will be small but in

reverse bias, resistance will be very high..


since pentavalent impurity is doped, the semiconductor
will be an n type. That's why, the concentration of holes
reduces compared to the concentration of holes before
doping. (intrinsic concentration).

In reverse bias, the applied voltage is also helps the


potential barrier. so the width of the depletion region wil
increase. That's why applied voltage is added with the barrier
voltage here.
Diamond is an allotrope of carbon. eventhough carbon
is on the same 14th group, but because of the very high
energy gap of approximately 5.4 eV, it is considered as
an insulator. It's hard for valence electrons to attain this
much large energy to reach conduction band and become
free electrons. So Diamond is an insulator with 5.4eV energy
gap.
A capacitor in parallel or an inductor in series
to the load resistance can act as filter circuit
of rectifier. Purpose of a rectifier is to make
almost a steady dc from the pulsating dc
obtained in the output.

For a full wave rectifier, output frequency should be


double that of input and for a half wave rectifier, input
and output frequency are same.
Question:

Solution:
For Si, knee voltage is approx 0.6 to 0.7 V and
for Ge, it is 0.2 to 0.3V.
Question:

Solution:
mA should be converted to A. Consider a small linear
portion from the graph and find the resistance
exactly like in ohm's law. for a very small section,
the graph appears linear, but the whole graph is
non linear.
question:

solution:
material A should be an intrinsic (pure)
semiconductor because n(e)= n(h).
Then the ratio n(e)/n(h) = 1.
If this ratio is less than 1, then that means
numerator part should be small,
that is, n(e) less than n(h). so hole is
the majority carriers and free e is
minority carriers. so it should be a
p type semiconductor.
Question:

solution:

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