Key Equations
Physical
constants:
Silicon
parameters
(T
=
300K)
= 1.055 × 10 −34
[ J-s ]
N C = 3.23× 1019 cm -3
m0 = 9.109 × 10 −31 [ kg ]
NV = 1.83× 1019 cm -3
k B = 1.380 × 10 −23 [ J/K ]
ni = 1× 1010 cm -3
q = 1.602 × 10 −19
[C]
K S = 11.8
ε 0 = 8.854 × 10−12 [F/m]
Miller
Indices:
(hkl)
{hkl}
[hkl]
<hkl>
(m ) 2 ( E − EC )
3/2
*
DOS:
gC ( E) = n
π ! 2 3
FF:
f ( E ) =
1
( E−EF ) kBT
ni = N C NV e− EG /2 kBT
1+ e
Equilibrium
Carrier
densities:
3/2
1 ⎛ 2mn*k BT ⎞
n0 = N C e( F C ) n0 = ni e( EF − Ei ) kBT
E −E k BT
m-‐3
NC = ⎜ m-‐3
4 ⎝ π ! 2 ⎟⎠
3/2
1 ⎛ 2mp k BT ⎞
*
p0 = NV e( V F ) p0 = ni e( Ei − EF ) kBT
E −E k BT
m-‐3
NV = ⎜ ⎟ m-‐3
4 ⎝ π !2 ⎠
Space
charge
neutrality:
p − n + N D+ − N A− = 0
Law
of
Mass
Action:
n0 p0 = ni2
Conductivity
and
resistivity:
σ = σ n + σ p = q nµ n + pµ p = 1 ρ
( ) ( )
dFn dn
Current
equations:
J n = nµ n
J n = nqµ nE x + qDn
Dn µ n = k BT q
dx dx
dF dp
J p = pµ p p
J p = pqµ pE x − qD p
D p µ p = k BT q
dx dx
Recombination:
SRH:
R = Δn τ n m-‐3s-‐1
or
R = Δp τ p
m s -‐3 -‐1
Semiconductor
Equations:
∂n ⎛ Jn ⎞
= −∇ i ⎜ ⎟ + Gn − Rn
Minority
Carrier
Diffusion
Equation:
∂t ⎝ −q ⎠
∂p ⎛ Jp ⎞ ∂ Δp ∂ 2 Δp Δp
= −∇ i ⎜ ⎟ + G p − Rp
= Dp − + GL
∂t ⎝ q⎠ ∂t ∂x 2 τ p
0 = −∇ i ε E + ρ ( )
Lp = D pτ p
1
Non-‐equilibrium:
E F → Fn ( x ) , Fp ( x )
n0 p0 = ni2 → np = ni2 e
(F −F )
n p k BT
n0 = N C e( F C ) → n = N C e( n C )
E −E k BT F −E k BT
p0 = NV e( V F )
E −E k BT
→ p = NV e
(E V − Fp ) k BT
PN
junction
electrostatics:
kBT ⎛ N D N A ⎞ dE ρ ( x)
Vbi = ln ⎜ =
q ⎝ ni2 ⎟⎠
dx K S ε 0
1/2
⎡ 2K ε ⎛ N + N D ⎞ ⎤ NA ND 2qVbi ⎛ N D N A ⎞
W =⎢ S 0⎜ A ⎟ Vbi ⎥ xn = W xp = W E (0) =
⎣ q ⎝ N D N A ⎠ ⎦
N A + N D
N A + N D
K sε 0 ⎜⎝ N A + N D ⎟⎠
Diode
Current:
n2 ni2 qVA
Δn ( 0 ) = i ( eqVA kBT − 1) Δp ( 0 ) = (e kBT
− 1)
NA
ND
⎛ D n2 D n2 ⎞ ⎛ D n2 D n2 ⎞
I D = I 0 ( eqVA /kBT − 1)
I 0 = qA ⎜ n i + p i ⎟
(long)
I 0 = qA ⎜ n i + p i ⎟
(short)
⎝ Ln N A L p N D ⎠ ⎝ WP N A Wn N D ⎠
( )
non-‐ideal
I D = I 0 eq(V −IRS )/nkBT − 1
I gen = −qA i W
n
2τ 0
I +I K Sε 0 A
small
signal:
Gd = D 0
C J (VR ) = 1/2
C D = Gd τ n
kBT q ⎡ 2K S ε 0 ⎤
⎢ qN (Vbi − VA ) ⎥
⎣ A ⎦
MS
Diodes:
qVbi = Φ M − Φ S
Φ BP = χ + EG − Φ M
Φ BN = Φ M − χ
4π qm *kB2
J = J0 (e qVA /kBT
− 1)
J0 = A T e* 2 − Φ B kBT
A =
*
h3
MOS
Capacitors:
2K S ε 0φS 2qN AφS
W= cm
E S = V/cm
QB = −qN AW (φS ) = − 2q K S ε 0 N AφS C/cm 2
qN A K Sε 0
QS (φS )
VG = VFB + φS + Δφox = VFB + φS −
Cox = K Oε 0 xo
VFB = Φ ms q − QF Cox
Cox
Cox QB ( 2φF )
C= VT = − + 2φF Qn = −Cox (VG − VT )
K W (φS ) Cox
1+ O
K S xo
2
MOSFETs:
I D = −WQn ( y = 0 ) υ y ( y = 0 )
W
ID = (
µ C V − VT VDS
L n ox GS
) I D = W Cox υ sat (VGS − VT )
Square
Law
theory:
W ⎛ 0 ≤ VDS ≤ VGS − VT ,⎞
ID =
L
(
µ nCox ⎡⎣ VGS − VT VDS − VDS
2
2 ⎤⎦ ⎜ )
⎝ VGS ≥ VT
⎟
⎠
W ⎛ VDS > VGS − VT ⎞
µ nCox (VGS − VT )
2
ID = ⎜V ≥ V ⎟
2L ⎝ GS T ⎠
Bipolar
transistors:
(NPN,
short
emitter,
base,
and
collector)
Ebers-‐Moll
equations:
⎛ D n2 D n2 ⎞
I C (VBE ,VBC ) = α F I F 0 ( eqVBE kBT
− 1) − I R0 ( eqVBC kBT
− 1)
I F 0 = qA ⎜ nB i + pE i ⎟
⎝ WB N AB WE N DE ⎠
⎛ DnB ni2 D pC ni2 ⎞
I E (VBE ,VBC ) = I F 0 ( e qVBE kBT
− 1) − α R I R0 ( e qVBC kBT
− 1)
I R0 = qA ⎜ +
⎝ WB N AB WC N DC ⎟⎠
α F = γ Fα T
α R = γ Rα T
α F I F 0 = α R I R0
I En 1
γF = =
I En + I Ep D pE WB N AB
1+
DnB WE N DE
I Cn 1
αT = = 2
I En 1 ⎛ WB ⎞
1+ ⎜
2 ⎝ LnB ⎟⎠
αF
βF =
1− α F
βF
αF =
1+ β F
3