This product complies with the RoHS Directive (EU 2002/95/EC).

FL6L5201
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For switching circuits
For DC-DC converter circuits

 Overview  Package
FL6L5201 is P-channel single type small signal MOS FET with SBD  Code
employed small size surface mounting package. WSSMini6-F1
Package dimension clicks here.→ Click!
 Features
 Low drain-source ON resistance: RDS(on) typ. = 80 mW (VGS = –4.0 V)  Pin Name
 Composide with Schottky barrier diode 1: Gate 4: Cathode
 Small size surface mounting package: WSSMini6-F1 2: Source 5: Drain
 Contributes to miniaturization of sets, reduction of component count. 3: Anode 6: Drain
 Eco-friendly Halogen-free package
 Marking Symbol: Y1
 Packaging
FL6L52010L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  Internal Connection
(D) (D) (K)
 Absolute Maximum Ratings Ta = 25°C 6 5 4

Parameter Symbol Rating Unit

FET
Drain-source surrender voltage VDSS –20 V
Gate-source surrender voltage VGSS ±10 V SBD
FET
Drain current ID –2.0 A 1 2 3
(G) (S) (A)
Peak drain current IDP –8.0 A
Channel temperature Tch 150 °C
Reverse voltage VR 20 V
SBD Forward current (Average) IF(AV) 800 mA
Junction temperature Tj 125 °C
Total power dissipation * PD 540 mW
Overall
Storage temperature Tstg –55 to +125 °C
Note) *: Measuring on ceramic substrate at (40 mm × 38 mm × 0.2 mm)
Absolute maximum rating without heat sink for PD is 150 mW

Publication date: February 2012 Ver. AED 1

 This product complies with the RoHS Directive (EU 2002/95/EC).

FL6L5201

 Electrical Characteristics Ta = 25°C±3°C

 FET
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = –1.0 mA, VGS = 0 V –20 V
Drain-source cutoff current IDSS VDS = –20 V, VGS = 0 V –1.0 mA
Gate-source cutoff current IGSS VGS = ±8 V, VDS = 0 V ±10 mA
Gate threshold voltage VTH ID = –1.0 mA, VDS = –10 V – 0.4 – 0.75 –1.1 V
ID = –1.0 A, VGS = –4.0 V 80 120
Drain-source ON resistance *1 RDS(on) ID = –1.0 A, VGS = –2.5 V 100 170 mW
ID = – 0.5 A, VGS = –1.8 V 140 230
Forward transfer admittance *1 Yfs ID = –1.0 A, VDS = –10 V, f = 1 kHz 3.0 S
Short-circuit input capacitance (Common source) Ciss 300 pF
Short-circuit output capacitance (Common source) Coss VDS = –10 V, VGS = 0 V, f = 1 MHz 30 pF
Reverse transfer capacitance (Common source) Crss 35 pF
Turn-on delay time *2 td(on) VDD = –10 V, VGS = 0 V to –4 V, 6 ns
Rise time *2 tr ID = –1.0 A 8 ns
Turn-off delay time *2 td(off) VDD = –10 V, VGS = –4 V to 0 V, 57 ns
Fall time *2 tf ID = –1.0 A 55 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Test circuit

VIN VCC = −10 V

0V PW = 10 µs 10%
ID = −1.0 A VIN
−4 V Duty Cycle ≤ 1% RL = 10 Ω
VOUT 90%
D
G 90%
VIN VOUT
50 Ω 10%
S td(on) tr td(off) tf

 SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF IF = 800 mA 0.47 V
Reverse current IR VR = 20 V 80 µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2 Ver. AED
 This product complies with the RoHS Directive (EU 2002/95/EC).

FL6L5201

Common characteristics chart

FL6L5201_FET_ PT-Ta
PT  Ta
(1) Ceramic substrate
(40 mm × 38 mm × 0.1 mm)
(2) Without substrate
600
Total power dissipation PT (mW)

(1)

400

200
(2)

0
0 40 80 120 160 200
Ambient temperature Ta (°C)

Characteristics charts of FETI -V

FL6L5201_FET_ FL6L5201_FET_ ID-VGS FL6L5201_FET_ RDS(on)-VGS
D DS
ID  VDS ID  VGS RDS(on)  VGS
−1.0 −1.0 103
VGS = −4.0 V Ta = 25°C

Drain-source ON resistance RDS(on) (mΩ)

−2.5 V VDS = −10 V ID = −1 A

− 0.8 −1.8 V − 0.8

−1.6 V
Drain current ID (A)

Drain current ID (A)

Ta = 85°C
− 0.6 − 0.6

102
−1.4 V
− 0.4 − 0.4
25°C
−1.2 V
− 0.2 − 0.2

−30°C
Ta = 25°C
0 10
0 − 0.1 − 0.2 − 0.3 − 0.4 − 0.5 0 − 0.5 −1.0 −1.5 −2.0 0 −2 −4 −6 −8 −10
Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V)

FL6L5201_FET_ RDS(on)-ID
RDS(on)  ID
103
Ta = 25°C
Drain-source ON resistance RDS(on) (mΩ)

VGS = −1.8V

102

−4.0 V
−2.5 V

10
−10−2 −10−1 −1
Drain current ID (A)

Ver. AED 3
 This product complies with the RoHS Directive (EU 2002/95/EC).

FL6L5201

FL6L5201_FET_Ciss , Crss , Coss -VDS FL6L5201_FET_|Yfs|-ID

Ciss , Crss , Coss  VDS Yfs  ID
400 10
Short-circuit output capacitance (Common source) Coss (pF)

Ta = 25°C Ta = 25°C
VDS = −10 V
Short-circuit input capacitance (Common source) Ciss ,

Forward transfer admittance |Yfs | (S)

Ciss
Reverse transfer capacitance (Common source) Crss ,

300

200 1

100
Coss

Crss
0 10−1 −2
0 −5 −10 −15 −20 −10 −10−1 −1
Drain-source voltage VDS (V) Drain current ID (A)

CharacteristicsFL6L5201_SBD_
charts of SBDI -V FL6L5201_SBD_ IR-VR FL6L5201_SBD_Ct-VR
F F
IF  VF IR  VR Ct  VR
1 10−1 80
Ta = 25°C
10−2
10−1 Ta =85°C Ta =85°C

Terminal capacitance Ct (pF)

60
10−3
Forward current IF (A)

Reverse current IR (A)

10−2
10−4 25°C
40
10−3 25°C 10−5

10−6 −30°C
20
10−4 −30°C
10−7

10−5 10−8 0
0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 0 5 10 15 20
Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V)

4 Ver. AED
 Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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