CHE323/384 Chemical Processes for Micro- and Nanofabrication
Chris Mack, University of Texas at Austin
Homework #3
1. Given the parameters in Table 4.1 and the activation energies in Figures 4.2 and 4.3 of
the Campbell textbook (also found in the Lecture 12 notes), determine the Arrhenius
coefficients for B and B/A for both wet (640 torr) and dry oxidation.
I used Excel to fit the data in Table 4.1 to the Arrhenius equation. Taking the log of the
EA
Arrhenius equation for B, as an example, ln( B) ln( Ar ) . Thus, if I plot ln(B) versus 1/kT the
kT
slope will -EA and the intercept will be ln(Ar), where Ar is the Arrhenius coefficient I am looking
for. Here are the results, in table form.
Dry B Dry B/A Wet B Wet B/A
(m2/hr) (m/hr) (m2/hr) (m/hr)
Ar 1298 7.98X106 189 5.79X107
EA (eV) 1.29 2.02 0.71 1.93
Alternately, if I fix the activation energy to be the value found in Campbell figures 4.2 and 4.3,
I’ll get a slightly different result for Ar. These results are in the following table.
Dry B Dry B/A Wet B Wet B/A
(m2/hr) (m/hr) (m2/hr) (m/hr)
Ar 850 6.64X106 197 7.39X107
EA (eV) 1.24 2.0 0.71 1.96
2. Does the oxide thickness at which there is a transition from linear to parabolic rates
change if we perform an oxidation at a pressure of 20 atmospheres rather than at 1
atmosphere?
The transition from linear to parabolic regimes occurs at a thickness of A/2. Since A is not a
function of pressure, there will be no change in the thickness at which the transition occurs when
the pressure is changed.
3. A certain technology requires a gate oxide of 95 nm, and this oxidation will be carried
out in dry O2 at 1000 C. There is no initial oxide on the (111) wafer. What oxidation
time is required? Does this oxidation process end in the linear regime, the parabolic
regime, or in between?
From Table 4.2, A = 0.165 m, B = 0.0117 m2/hr, = 0.37. Solving the Deal-Grove equation
for tox,
tox Atox 0.0952 (0.165)(0.095)
2
tox Atox B (t ) , t 0.37 1.74 hr
2
B 0.0117
Note: one could also use the graphs in Campbell to read off the values of A and B at this
temperature.
Since tox is about the same as A/2, this oxidation process is in between the linear and parabolic
regime.
4. Repeat problem 3 for wet oxidation.
From Table 4.2, A = 0.226 m, B = 0.287 m2/hr, = 0. Solving the Deal-Grove equation for
tox,
tox Atox 0.0952 (0.226)(0.095)
2
tox Atox B (t ) , t 0.11 hr
2
B 0.287
(Note that a 6 minute oxidation time is too fast to control!!) Since t ox is about the same as A/2,
this oxidation process is in between the linear and parabolic regime.
5. Repeat problem 3 for the case where the wafer already contains a 45-nm thick oxide film.
to Ato 0.0452 (0.165)(0.045)
2
Calculating 0.81 hr . Thus,
B 0.0117
tox Atox 0.0952 (0.165)(0.095)
2
t 0.81 1.30 hr
B 0.0117
Alternately, one could calculate how long it would take to grow a 45-nm thick oxide film, and
subtract that time from the answer to problem 3.
tox Atox 0.0452 (0.165)(0.045)
2
t 45nm 0.37 0.44 hr
B 0.0117
t t95 nm t 45 nm 1.74 0.44 1.30 hr