FOUR-YEAR (EIGHT SEMESTER)
UNDER GRADUATE COURSES OF STUDIES
IN ELECTRONICS
FIRST YEAR : FIRST SEMESTER
Discipline Specific Core-1 (DSC-1)/Major-1
Course Name: Fundamentals of Circuit Theory and Electronic Devices
[Credits: 4 (3Th + 1P)]
ELT-H-CC-1-1-TH
Course Name: Fundamentals of Circuit Theory and Electronic Devices
[Credits: 3; Lecture Hours: 45]
UNIT-I [12 Hours]
Electric Circuit Elements: Resistance and Resistors: Types, Color Coding and Power Rating,
Variable Resistors, Capacitance and Capacitors: Types, Color Coding and Voltage Rating,
Inductance and Inductors: Types, Color Coding, Inductor Coils, Air-core and Iron-core Coils,
Self-inductance and Mutual-inductance, Transformers.
Circuit Analysis: Concept of Voltage and Current Sources, Conservations of Flux Leakage
associated with Inductors and Charge associated with Capacitors, Kirchhoff’s Voltage Law,
Kirchhoff’s Current Law, Transformation of Voltage and Current Sources, Mesh Analysis and
Node Analysis, Star-Delta Networks and Conversion.
DC Analysis: Transient Responses of Series RL and RC Circuits under DC Excitation.
AC Analysis: Responses of Circuit Parameters, Frequency Response of Series RL, RC and
RLC Circuits under AC Excitation, Quality (Q) Facor of Inductor and Capacitor, Series and
Parallel Resonance Circuits, Q-Factor.
Network Therems: Superposition Theorem, Thevenin’s Theorem, Norton’s Theorem,
Reciprocity Theorem, and Maximum Power Transfer Theorem.
UNIT-II [11 Hours]
Semiconductor Basics: Semiconductor Materials: Types and Properties, Concept of Energy
Bands in Solids: Metal, Insulator and Semiconductor, Intrinsic and Extrinsic Semiconductors,
P-Type and N-Type Semiconductors, Energy Band Diagram, Concept of: Effective Mass,
Direct and Indirect Bandgap Semiconductors, Fermi Level, Density of States, Mechanism of
Current Conduction in Semiconductors (Drift and Diffusion), Drift Velocity, Mobility,
Resitivity, Conductivity, Hall Effect (No derivation).
Junction Diode and Its Applications: PN Junction: Wafer Level Structure, Energy Band
Diagram, Depletion Layer, Diode Equation and I-V Characteristics, Ideal Diode, Static and
Dynamic Resistance, Reverse Saturation Current, Zener and Avalanche Breakdown, Zener
Diode, Zener Diode as Voltage Regulator, Rectifiers: Half Wave Rectifier, Full Wave
Rectifiers (Center tapped and Bridge), Peak Inverse Voltage, Ripple Factor, Efficiency, Line
Regulation, Load Regulation, Transformer Utilization Factor, Shunt Capacitor Filter, Concept
of Bleeder Resistor.
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UNIT-III [11 Hours]
Bipolar Junction Transistor: Wafer Level Structure, and Brief Manufacturing Techniques
(Growth, Alloy or Fused, Diffusion, Epitaxy), Energy Band Diagram, Doping Profile, PNP and
NPN Transistors, Common Base (CB), Common Emitter (CE) and Common Collector (CC)
Configurations, Working Principle, Emitter (Injection) Efficiency, Base Transportation Factor,
Current Components in BJT, Current Gains: α, β and , Input and Output Characteristics in
CB, CE and CC Modes, Early Effect and Voltage, Leakage Currents.
Transistor Biasing: Need for Biasing and Bias Stabilization, Load Line and Q-Point, Stability
and Stability Factor, Thermal Runaway, Fixed Bias, Collector to Base Bias, Voltage Divider
Bias and Emitter Bias.
UNIT IV [11 Hours]
BJT Amplifiers: re-model and h-Parameter Equivalent Circuit of BJT, Small Signal Analysis
of Single Stage CE Amplifier, Frequency Response, Input and Output Impedances, Current,
Voltage and Power Gains, Concept of Class A, B, AB and C Amplifiers.
Field Effect Transistor: Junction FET, Formation of Channel and Operating Principle, Pinch
Off and Saturation Voltages and Currents, Drain and Transfer Characteristics of N-Channel
JFET, FET Parameters, Small Signal Equivalent Circuits of JFET in Common Source (CS),
Common Drain (CD) Configurations, Voltage Gain, Input and Output Imedances of CS FET
Amilifier, Normally-Off and Normally-On MESFET.
ELT-H-CC-1-1-P
Course Name: Fundamentals of Circuit Theory and Electronic Devices Laboratory
[Credits: 1; Contact Hours: 30]
1. To Familiarize with Basic Electronic Components (R, C, L, Diodes, Transistors), Digital
Multimeter, Function Generator and Oscilloscope.
2. Verification of (a) Thevenin’s Theorem and (b) Norton’s Theorem.
3. Verification of (a) Superposition Theorem and (b) Maximum Power Transfer Theorem.
4. Study of the I-V Characteristics of (a) P-N Junction Diode and (b) Zener Diode.
5. Study of (a) Half Wave Rrectifier and (b) Full Wave Rrectifier (FWR) without and with
Capacitor Filter.
6. Study of Zener Diode as Voltage Regulator and its Load Regulation.
7. Study of the I-V Characteristics of the Common Emitter Configuration of BJT
8. Study of the I-V Characteristics of the Common Base Configuration of BJT
9. Study of the I-V Characteristics of JFET.
Reference Books:
• Nasar, Electric Circuits, Schaum’s Solved Problems Series, Tata McGraw Hill.
• Nahvi and Edminister, Electric Circuits, Schaum’s Outline Series, Tata McGraw Hill.
• Boylestad, Essentials of Circuit Analysis, Pearson.
• Chattopadhyay and Rakshit, Fundamentals of Electric Circuit Theory, S. Chand.
• Hyat, Kemmerly and Durbin, Engineering Circuit Analysis, Tata McGraw Hill.
• Sadiku, Musa and Alexander, Applied Circuit Analysis, Tata McGraw-Hill.
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