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Quantum Materials Solutions Tutorial 6-7

The document contains solutions for a tutorial sheet on quantum materials, covering topics such as lattice vibrations, specific heat contributions in metals and semiconductors, and the behavior of conduction electrons. Key points include the Debye frequency, the significance of electronic contributions to specific heat at low temperatures, and the comparison of conductivity between germanium and silicon. Additionally, it discusses the periodic nature of k-space and the differentiation between various material types based on bandgap values.

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6 views3 pages

Quantum Materials Solutions Tutorial 6-7

The document contains solutions for a tutorial sheet on quantum materials, covering topics such as lattice vibrations, specific heat contributions in metals and semiconductors, and the behavior of conduction electrons. Key points include the Debye frequency, the significance of electronic contributions to specific heat at low temperatures, and the comparison of conductivity between germanium and silicon. Additionally, it discusses the periodic nature of k-space and the differentiation between various material types based on bandgap values.

Uploaded by

rkapoorbe23
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

UES-022 (Quantum Materials)

Department of Physics and Material Science, TIET


Jan-May 2025
Solutions Tutorial Sheet 6-7

1. hν = kBT

T = 43.03 K

2. a) Highest lattice vibration frequency in a solid = ωD (Debye frequency)

x 1014 rps
b) For T > θD, average no. of phonons of frequency ω, ̅ = 2.9 x 104

c) For T > θD, C = 3R


d) For T << θD, C =
C = 1.752 x 10-4 J/mol-K
⁄
e)
Nd: Number density
vs: velocity of sound
vs = 1.34 x104 m/s

3. For metals, the electronic contribution to specific heat, Ce, is significant only at very
low temperatures (<20K).
Ce = TF: Fermi temperature = EF/k
a)
Dulong-Petit value of Specific heat = 3R

TDR = 3.52 x 104 K

b)
at low temperature, phononic contribution

( )
Temperature at which phononic and electronic contributions are equal, To = 2.005 K

4.
κmetal ≈ κe =

κ = 155 W/m-K
5.

q
q denotes the heat flux, or heat flow, per unit time per unit area

q = 1.6 106 W/m2

Total energy transmitted in time t = Q = q x Area x t = 2.8 x 109 J

6. Semiconductors have completely filled valence bands. Band gap between the valence
band and conduction band is small enough (< 3eV) for the electrons to be thermally
excited to conduction band,
At 0K. Both materials will be perfect insulators. Conduction bands of both are
completely empty
At 300 K, Ge will have higher conductivity. Because Ge has smaller bandgap (0.7 eV)
so more electrons are able to reach the conduction band as compared with Si (1.1 eV)
for same thermal excitation (300 K)

7. For metals conduction electrons lie near the Fermi energy.


So KE of conduction electron = EF
⁄
√
λ = 176.11 nm >> 0.256 nm = a

8. a) mobility, μ = e τ/m
b) In band theory the electromagnetic formulation remain the same with the effect of
the ionic lattice incorporated in the mass of the electron.
The effective mass of the charge carrier (electron/hole) depends on its band and where
it is located inside the band. The conduction electrons lie at the bottom of the
conduction band where as the holes lie at the top of the valence band. So their
effective masses are different.

9. PPT
10. 1. k-space/Momentum space becomes periodic in 2π/a
2. Continuous E-k diagram gets replaced by Band diagram/opening of the forbidden
gap in the Energy diagram
3. Bandgap values depend on the interaction potential between the electrons and the
ionic lattice
4. The differentiation between the metal, semi-metal, semiconductor and insulators
can be explained on the basis of the number of valence electrons and Bandgap values
5. Mass of the electron in the formulas is replaced by effective mass.
11. PPT

12. PPT

13. PPT

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