10 March 2025 (Monday)

8:30 am to 8:55 am
Opening Ceremony
Venue: Grand Hall A, 1/F, 12W

8:30 am Welcome Remark

Prof. Yang CHAI, General Chair, EDTM 2025

8:35 am Opening Remark by EDS

Dr Bin ZHAO, President, IEEE Electron Devices Society

8:40 am EDTM Report

Prof. Yang CHAI, General Chair, EDTM 2025

8:45 am EDS AWARDS

IEEE EDS Simon Sze Education Award

9:00am to 9:40am
Plenary #1
Prof. John A. Rogers, Northwestern University, USA
Transient Electronics – From Bioelectronic Medicines to Environmental Monitors

9:40am to 10:20am
Plenary #2
Prof. Ming Liu, Fudan University, China
Advancing Emerging Device and Architecture Innovations in the Post-Moore Era

10:20am to 10:30am
Coffee Break
10:30am to 12:30pm
2025 MEMS Workshop on “MEMS and Filter”
Venue: Function Hall, 1/F, 12W

10:30am MEMS and Filter-1

Acoustic Wave Devices Using MEMS-Inspired Technology
Shuji Tanaka, Tohoku University, Japan

11:00am MEMS and Filter-2

Surface Acoustic Wave Resonators and Filters
Michio Kadota, Tohoku University, Japan

11:30am MEMS and Filter-3

Characterization and modelling of nonlinearities in electro-acoustic devices for RF communications
Carlos Collado Gomez, Universitat Politecnica de Catalunya, Spain

12:00pm MEMS and Filter-4

Exhaustive synthesis theory of microwave filters and its potential application to acoustic wave resonator filters
Ke Li WU, The Chinese University of Hong Kong, Hong Kong

Track 3 Advanced Semiconductor (Logic) Devices M-3-1

Venue: Conference Hall 4&5, 2/F, 8W&10W

10:30am M-3-1-1 [Invited]

Impact of Charge Trapping at Defects on the Robustness of Electronic Circuits
Michael Waltl, TU Wien, Germany

10:50am M-3-1-2 [Invited]

Multimode Transistors based on Ion-dynamic Capacitance
Chuan Liu, Sun Yat-Sen University, China

11:10am M-3-1-3 [Invited]

Understanding the Impact of Hydrogen on the Reliability of Oxide Semiconductor FETs
Xiao Gong, National University of Singapore, Singapore

11:30am M-3-1-4
Investigation of Passivation Layers for Self-aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with
Metal-Reacted Low-Resistance Source/Drain
Yuhan Zhang, Jiye Li, Hao Pen, Huan Yang, Lei Lu, Shengdong Zhang, Peking University, China

11:45am M-3-1-5
Thermal Crosstalk Analysis in Advanced CMOS Circuits: Insights from 3nm Gate-All-Around Transistor
Technology
Sihao Chen,Honglin Wu,Runsheng Wang,Ru Huang,Lining Zhang, Peking University, China

12:00pm M-3-1-6
High Mobility and Improved Subthreshold Characteristics of Ultra-Thin Channel IGZTO TFTs Down to 3 nm
Kai Chen,Yi Jiang,Zhaolong He,Rui Zhang,Junkang Li,Yunlong Li, ZheJiang University, China

12:15pm M-3-1-7
Optimizing ALD-deposited IGZO TFT Thermal Stability through Compositional Adjustments
Jianting Wu,Huajian Zheng,Min Guo,Yi Huang,xiaoci liang,Qian Wu,Chuan Liu, Sun Yat-sen University, China
Track 4 Memory Technologies M-4-1
Venue: Grand Hall A, 1/F, 12W

10:30am M-4-1-1 [Keynote]

Content Addressable Memory Hierarchies for Computing in Memory
John Paul Strachan, Institute (PGI-14) Neuromorphic Compute Nodes, Forschungszentrum Juelich/RWTH
Aachen University, Germany

10:50am M-4-1-2 [Invited]

An Efficient Pipeline Programming Scheme Based on 40nm PCM Compute-in-Memory Chip for CNNs
Yuchao Yang, Peking University, China

11:10am M-4-1-3 [Invited]

HfO2-Based Ferroelectric Field-Effect Transistors for Next-Generation Storage and In-Memory Computing
Applications
Chengji Jin, Xidian University, China

11:30am M-4-1-4 [Invited]

Hafnia-based XP-FeRAM: A Novel High-speed and Low-power Cross-point Ferroelectric Memory for Data-
intensive Applications
Qianqian Huang, Peking University, China

11:50am M-4-1-5 [Invited]

Conductive atomic force microscopy to assess the reliability of emerging memories
Mario Lanza, National University of Singapore, Singapore

12:10pm M-4-1-6 [Invited]

Recent advances in on-chip learning with organic neuromorphic circuits
Yoeri van de Burgt, TU Eindhoven, The Netherlands

Track 5 Photonics, Imaging and Display M-5-1

Venue: Conference Hall 6&7, 2/F, 8W & 10W

10:30am M-5-1-1 [Invited]

CMOS Compatible Spike Vision Sensor
Kai Wang, Sun Yat-Sen University, China

10:50am M-5-1-2 [Invited]

Single Photon Devices Using Layered Materials
Kausik Majumdar, Indian Institute of Science, India

11:10am M-5-1-3 [Invited]

Novel GaN Integrated Photonics For Advanced Optical Communication and Imaging
Haiding Sun, University of Science and Technology of China, China

11:30am M-5-1-4 [Invited]

Van der Waals infrared photon detectors for standard blackbody characterization
Peng Zhou, Fudan University, China
11:50am M-5-1-5 [Invited]
Simulation of Germanium-Tin-based n+/i-Well Dot Single-Photon Avalanche Diode for Fiber-Optic
Telecommunication Networks
P. Susthitha Menon, National University of Malaysia (UKM), Malaysia

12:10pm M-5-1-6
Blackbody-sensitive 2D materials and infrared applications
Wang Zhen,Weida Hu, State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics,
Chinese Academy of Sciences, China

Track 7 Modeling and Simulation M-7-1

Venue: Charles K Kao Auditorium, 1/F, 8W & 10W

10:30am M-7-1-1 [Keynote]

Insulators for Devices Based on 2D Materials (Keynote)
Tibor Grasser, TU Wien, Austria

10:50am M-7-1-2 [Invited]

Recent Advances in Compact Modeling for Advanced Semiconductor Technology
Runsheng Wang, Peking University, China

11:10am M-7-1-3 [Invited]

Cryogenic SEKV Compact Model Applied to 22 nm FDSOI Enabling Low-temperature Circuit Simulation
Christian Enz, EPFL, Switzerland

11:30am M-7-1-4 [Invited]

Modeling Dynamics-rich Devices with the Dynamic Time Evolution Method
Lining Zhang, Peking University, China

11:50am M-7-1-5 [Invited]

Surface Potential-based Compact Model for IGZO-DRAM Enables the TCAD-to-SPICE Framework for Reliability-
aware DTCO Flow
Ling Li, Institute of Microelectronics, CAS, China, China

12:10pm M-7-1-6 [Invited]

TCAD and mixed-mode simulation supporting the development of contact-controlled thin-film transistors and
circuits
Radu Sporea, University of Surrey, UK

Track 10 Sensor, MEMS, Bio-electronics M-10-1

Venue: INNO2 Multifunction Hall 2&3, 2/F, 17W

10:30am M-10-1-1 [Invited]

A Hybrid Design Method of Lamb Wave Mode Filter Based on Machine Learning and COM Model
Wang Nan, Shanghai University, China

10:50am M-10-1-2 [Invited]

ScAlN-based Bulk Acoustic Wave Technology for 5G Filtering Applications
Liu Chen, Institute of Microelectronics, A*STAR, Singapore
11:10am M-10-1-3 [Invited]
High-Frequency and Wideband RF Filters for 6G and Wi-Fi 7
Chengjie Zuo, USTC University, China

11:30am M-10-1-4
Twisted-placed Multilayer Stack for Inherent Suppression of Transverse modes of Layered SAW Devices
Boyuan Xiao, Sulei Fu, Peisen Liu, Xinchen Zhou, Qiufeng Xu, Jiajun Gao, Shuai Zhang, Rui Wang, Cheng Song,
Fei Zeng, Weibiao Wang, Feng Pan, Tsinghua University, China

11:45am M-10-1-5
Towards Spectrum Spurious-free and Wideband SAW Devices Based on LN/AT-Quartz Layered Structure
Peisen Liu, Sulei Fu, Boyuan Xiao, Xinchen Zhou, Qiufeng Xu, Jiajun Gao, Shuai Zhang, Rui Wang, Cheng Song,
Fei Zeng, Weibiao Wang, Feng Pan, Tsinghua University, China

12:00pm M-10-1-6
Capacitive Length-extension Mode Resonators with Stress-induced Gap-closing Electrodes for Motional
Resistance Reduction
Hao Yu, Yechen Miao, Fang Wang, Ke Sun,Yi Sun, Tiger H Tao, Heng Yang, Shanghai Institute of Microsystem
and Information Technology, CAS, China

12:15pm M-10-1-7
Joule Heating Effect on Quality Factor and Frequency Tuning of 2D MoS2 NEMS Resonators
Shuai Yuan, Zuheng Liu, Pengcheng Zhang, Rui Yang, Shanghai Jiao Tong University, China

Track 11 Flexible and Wearable Electronics

10 March 2025
10:30am to 12:30pm Track 11 Flexible and Wearable Electronics M-11-1
Venue: INNO2 Multifunction Hall 1, 2/F, 17W

10:30am M-11-1-1 [Keynote]

Flexible Organic Artificial Nerves for Next-Generation Computing and Neuroprosthetics
Tae-Woo Lee, Seoul National University, South Korea

10:55am M-11-1-2 [Invited]

Flexible carbon nanotube optoelectronic neuromorphic devices and irradiation-resistance logic circuits with
low-work-function gate electrodes
Jianwen Zhao, Suzhou Institute of Nanotech and Nanobionics, CAS, China

11:15am M-11-1-3 [Invited]

Solution-processed oxide semiconductors-based enhancement-mode thin-film transistor circuits for artificial
spiking neurons
Bowen Zhu, Westlake University, China

11:35am M-11-1-4 [Invited]

Ultra-low Temperature Solution Processed Organic Thin-film Transistor for Flexible Integration
Xiaojun Guo, Shanghai Jiaotong University, China

11:55am M-11-1-5
BEOL Electro-Biological Interface for 1024-Channel TFT Neurostimulator with Cultured DRG Neurons
Haobin Zhou, Tsinghua University, China
12:10pm M-11-1-6
A sensing-computing system based on high uniformity photolithographic organic thin film transistor
Yaojie Zheng,Taoming Guo,Haobin Zhou,Chen Jiang, Tsinghua University, China

12:25pm M-11-1-7
Dual Gate-Enhanced Mechanical-Electrical Stability of Flexible InGaZnO TFTs
Jilin Li,Yuhan Zhang,Fion Sze Yan Yeung,Man Hoi Wong,Hoi Sing Kwok,Shengdong Zhang,Lei Lu,Runxiao Shi,
Peking University Shenzhen Graduate School, China

12:30pm to 1:30pm
Lunch
Venue: Grand Hall B, 1/F, 12W

1:40pm to 3:55pm
2025 MEMS Workshop on “MEMS and Filter”
Venue: Function Hall, 1/F, 12W

1:40pm MEMS and Filter-5

Overview on the Synthesis and Design of electroacoustic Filters
Prof. Jordi Mateu, Universitat Politecnica de Catalunya, Spain

2:10pm MEMS and Filter-6

AW Multiplexer Modules, Unveiling the floorplan by a Synthesis based EDA Tool
Prof. Pedro de Paco Sanchez, Univesitat Autonoma de Barcelona, Spain

2:40pm MEMS and Filter-7

Growth of LiNbO3 films for high-frequency acoustic devices
Prof. Ausrine Bartasyte, FEMTO-ST Institute, University of Franche-Comté, France

3:10pm MEMS and Filter-8

Wireless Magnetic Surface Acoustic Waves Sensors (MSAW) : A review
Prof. Omar Elmazria, Universite de Lorraine, France

Track 3 Advanced Semiconductor (Logic) Devices M-3-2

Venue: Conference Hall 4&5, 2/F, 8W & 10W

1:40pm M-3-2-1 [Invited]

Ferroelectric 3D NAND Storage
Asif Islam Khan, Georgia Institute of Technology, USA

2:00pm M-3-2-2 [Invited]

Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium
Chaoliang Tan, City University of Hong Kong, Hong Kong

2:20pm M-3-2-3 [Invited]

Leveraging Mature Chip Manufacturing Techniques for Innovative Technology Development
Yunlong Li, Zhejiang University, China

2:40pm M-3-2-4
Consideration of VFET for Ultimate Logic Scaling: A Design Perspective
Yimeng Wang,Yanbang Chu,Ziqiao Xu,Yu Liu,Rui Guo,Jiacheng Sun,Wanyue Peng,Haoran Lu,Ming Li,Runsheng
Wang,Heng Wu,Ru Huang, Peking University, China

2:55pm M-3-2-5
High Performance Ge FinFET CMOS Inverter with Plasma-Enhanced Supercritical Fluid Treatment
Dun-Bao Ruan,Zefu Zhao, Fuzhou University, China

3:10pm M-3-2-6
First Demonstration of Tunnel FET-based Physical Unclonable Function with Independent Entropy Source
through Ambipolar Current Modulation
Kaifeng Wang,Yingxi Zhou,Rundong Jia,Hongyan Han,Weihai Bu,Qianqian Huang,Ru Huang, Peking University,
China

3:25pm M-3-2-7
Laser-Induced Low Temperature Dopant Segregation Schottky Barrier MOSFET for Monolithic-3D
Feixiong Wang,Yadong Zhang,Jinbiao Liu,Yunjiao Bao,Zhiyao Wang,Shuang Liu,Mingzheng Ding,Zhaohao
Zhang,Qingzhu Zhang,Huaxiang Yin, The Institute of Microelectronics of the Chinese Academy of Sciences,
China

Track 5 Photonics, Imaging and Display M-5-2

Venue: Charles K Kao Auditorium, 1/F, 8W & 10W

1:40pm M-5-2-1 [Keynote]

Smart infrared detectors
Weida Hu, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

2:00pm M-5-2-2 [Invited]

Broadband miniaturized spectrometers with van der Waals junctions
Zhipei Sun, Aalto University, Finland

2:20pm M-5-2-3 [Invited]

Nanocrystalline Perovskite: A Route to High-Efficiency, Vivid Display Technologies
Tae-Woo Lee, Seoul National University, South Korea

2:40pm M-5-2-4 [Invited]

The Ultimate Limit in Optoelectronic Performances of Monolayer Two-Dimensional Semiconductor
Lei Liao, Hunan University, China

3:00pm M-5-2-5 [Invited]

Precise transmission matrix measurement of a multimode fiber and its applications
Yi Xu, Guangdong University of Technology, China

3:20pm M-5-2-6 [Invited]

Volumetric Super-Resolution Imaging based on Dual Bessel Beams STED Microscopy
Junle Qu, Shenzhen University, China

3:40pm M-5-2-7
Perovskite based Artificial Vision System for Geometric Shape Recognition
Shivam Kumar,Swapnadeep Poddar,Zhenghao Long,Zhiyong Fan, The Hong Kong University of Science and
Technology, Hong Kong
Track 6 Wide-Bandgap Power and RF Devices M-6-1
Venue: Grand Hall A, 1/F, 12W

1:40pm M-6-1-1 [Keynote]

Fundamentals and Future Challenges of SiC Power Devices
Tsunenobu Kimoto, Kyoto University, Japan

2:05pm M-6-1-2 [Keynote]

Challenges in Accelerating Power SiC Device Commercialization
Victor Veliadis, North Carolina State University;
Power America, USA

2:30pm M-6-1-3 [Keynote]

The Prospect Of GaN Power Devices and Their Role In the Era Of EV & AI
Yifeng Wu, GaNext, China

2:55pm M-6-1-4 [Invited]

Engineered Substrates for 3D RF Front Ends
Luis Andia, Soitec, Singapore

3:15pm M-6-1-5 [Invited]

Device Considerations for GaN Power Switching Transistors from Application and Reliability Perspectives
Zhikai Tang, Texas Instruments, USA

3:35pm M-6-1-6
InP/GaAsSb DHBT Emitter Etching Process Optimization with a Simultaneous fT/fMAX = 451/914 GHz and 86%
Device Yield
Mojtaba Ebrahimi Maroufi,Sara Hamzeloui,Filippo Ciabattini,Akshay Mahadev Arabhavi,Olivier
Ostinelli,Colombo Bolognesi, ETH Zurich, Switzerland

Track 7 Modeling and Simulation M-7-2

Venue: INNO2 Multifunction Hall 1, 2/F, 17W

1:40pm M-7-2-1 [Invited]

Performance Evaluation of 6T-SRAM in Sub-3 nm Complementary FET
Hussam Amrouch, Technical University of Munich, Germany

2:00pm M-7-2-2 [Invited]

A Device to Circuit BTI and HCD Aging Analysis Framework
Karansingh Pramodsingh Thakor, Indian Institute of Technology, India

2:20pm M-7-2-3
Global Stress Analysis in Fin Patterned Si/SiGe Multilayer Nanosheets for Nanosheet-based CMOS Device
Technology
Imtiyaz Ahmad Khan, Kunal Harsh Raju,Sanjeev Kumar Manhas,AMIT KUMAR SINGH CHAUHAN, Indian
Institute of Technology Roorkee, India

2:35pm M-7-2-4
Leveraging Ferroelectric Negative-Capacitance Effect for Energy Efficient Electronics
Jie-Ni Dai,Pin Su, National Yang Ming Chiao Tung University, Taiwan
2:50pm M-7-2-5
Modelling and Design of Short Channel Ferroelectric FETs with a Metal Interlayer easing the Multilevel
Operation
Chiara Rossi,Daniel Lizzit,David Esseni, University of Udine, Italy

3:05pm M-7-2-6
Reduced Process Induced Threshold Voltage Variability in Bulk Negative Capacitance Junctionless Transistors
Ruma S R,Vita-Pi Ho Hu,Manish Gupta, Birla Institute of Technology and Science-Pilani, K K Birla Goa Campus,
India

3:20pm M-7-2-7
A Novel De-Mirroring Approach for Bias-dependent Capacitance Extraction in Nanosheet FET using Conformal
Mapping
Deven H Patil,Sandeep Kumar,Sunil Rathore,Sudeb Dasgupta,Navjeet Bagga, Indian Institute of Technology
Bhubaneswar, India

Track 10 Sensor, MEMS, Bio-electronics M-10-2

Venue: INNO2 Multifunction Hall 2&3, 2/F, 17W

1:40pm M-10-2-1 [Invited]

Piezoelectric Micromachined Ultrasonic Transducers for Advanced Sensing Applications
Yipeng Lu, Peking University, China

2:00pm M-10-2-2 [Invited]

Single-crystal Diamond MEMS for Extreme Sensors
Meiyong Liao, National Institute for Materials Science, Japan

2:20pm M-10-2-3 [Invited]

MEMS Integrated with Self-Assembled Electrets
Daisuke Yamane, Ritsumeikan University, Japan

2:40pm M-10-2-4 [Invited]

Piezoresistive Internal Stress Sensing and Gas Detection via Polymer Swelling
Masaya Toda, Tohoku University, Japan

3:00pm M-10-2-5
Enhancing Transduction Efficiency in CMOS-MEMS CMUTs Through Atomic Layer Deposition: A Preliminary
Study
Tzu-Yun Huang,Ming-Huang Li, National Tsing Hua University, Taiwan

3:15pm M-10-2-6
Investigation on the Effect of Self-clocking in MEMS Gyroscope
Xuewen Liu,Hongsheng Li,Zhiyuan Wang, Southeast university, China

3:30pm M-10-2-7
A 3.98 GHz Aluminum Nitride Overmoded Bulk Acoustic Wave Resonator for Temperature Sensing Applications
Zhi-Qiang Lee,Kuan-Ting Chen,Chin-Yu Chang,Cheng-Chien Lin,Yung-Hsiang Chen,Yelehanka
Ramachandramurthy Pradeep,Rakesh Chand,Yenshih Ho,Ming-Huang Li, National Tsing Hua University, Taiwan
Track 13 Disruptive Technologies (Metaverse, Neuromorphic Computing, Quantum
Computing) M-13-1
Venue: Conference Hall 6&7, 2/F, 8W & 10W

1:40pm M-13-1-1 [Keynote]

Characterizing building blocks for optoelectronic devices based on two-dimensional materials by resonant
Raman spectroscopy
Ping-Heng Tan, Institute of Semiconductors, Chinese Academy of Sciences, China

2:00pm M-13-1-2 [Invited]

2D Materials for Future Physical Computing
Feng Miao, Nanjing University, China

2:20pm M-13-1-3
In2Se3 FET-Based Neural Network Circuit Design for Complete Associative Learning
Weiwei Xiong,Yasai WANG,Xiangshui Miao,Yang Chai,Yuhui He, Huazhong University of Science and
Technology, China

2:35pm M-13-1-4
Two-dimensional ReSe2 based Optoelectronic Synaptic Transistor
Wei Zeng, JiYu Zhao,Hang Li,Guanglong Ding,Ye Zhou,Suting Han, The Hong Kong Polytechnic University, Hong
Kong

2:50pm M-13-1-5
VO2 memristor-based adaptive neurons for electromyography signal processing
Rui Yang, Zhiyuan Li, Huazhong university of science and technology, China

3:05pm M-13-1-6
A CMOS-Compatible MoS₂ Transistor on Silicon-Rich Silicon Nitride as Multifunctional Neuromorphic Device
Xiangwei Su,Caijing Liang,Hongzhao Wu,Xinlong Zeng,Yuda Zhao, Zhejiang University, China

3:40pm to 4:00pm
Coffee Break
4:00pm to 6:30pm
FET 100 Special Session
Venue: Grand Hall A, 1/F, 12W

4:00 pm: Opening Remarks: Prof. Philip Chan (Chair)

4:05 pm: EDS Activities for the 100 Years of FET Development: Dr. Bin Zhao

4:10 pm Talk 1
Prof. Hiroshi IWAI, National Yang Ming Chiao Tung University, Taiwan
Overview: FET Invention and Evolution, History in Japan

4:35 pm Talk 2
Prof. Chenming HU, University of California, Berkeley, USA
Compact Modeling Evolution and Impact on the Semiconductor Industry

5:00 pm Talk 3
Prof. H.-S. Philip WONG, Stanford University, USA
Evolution of the FET: technology, business, and societal impact

5:25 pm Talk 4
Dr. Dae-Je CHIN, SkyLake Investment Company, South Korea
History in Korea and Samsung

5:50 pm Closing Remarks: Prof. Philip Chan

6:30pm to 8:30pm
Welcome Reception
Venue: Grand Hall B, 1/F, 12W
11 March 2025 (Tuesday)
8:40am to 9:20am
Plenary #3
Venue: Grand Hall A, 1/F, 12W
Subhasish MITRA, Stanford University, USA
The Future of Hardware Technologies for Computing

9:25am to 10:50am
Track 2 Process, Tools Yield, and Manufacturing T-2-1
Venue: Grand Hall A, 1/F, 12W

9:25am T-2-1-1 [Invited]

Novel Three-dimensional DRAM Cell Architectures with IGZO-channel and Key Technologies toward sub-10nm
and Beyond
Wonsok Lee, Samsung, South Korea

9:45am T-2-1-2 [Invited]

How semiconductor industry new challenges
will foster Engineered Substrates?
Christophe Figuet, SOITEC, France

10:05am T-2-1-3 [Invited]

Embracing Semiverse™ Solutions: Semiconductor Virtual Fabrication and Its
Applications
Qing Peng Wang, Lam Research, China

10:25am T-2-1-4 [Invited]

The Observation of 2D Electron Gas at Ga2O3/IGZO Interface
Mengwei Si, Shanghai Jiaotong University, China

Track 3 Advanced Semiconductor (Logic) Devices T-3-3

Venue: Charles K Kao Auditorium, 1/F, 8W & 10W

9:25am T-3-3-1 [Invited]

High density 3D integration of 2D transistors via van der Waals lamination
Yuan Liu, Hunan University, China

9:45am T-3-3-2 [Invited]

Monolithic 3D Integration of 2D Devices
Saptarshi Das, Pennsylvania State University, USA

10:05am T-3-3-3 [Invited]

Heterogeneous 3D CFET with Hybrid Channel Configuration
Sanghyeon Kim, KAIST, South Korea

10:25am T-3-3-4 [Invited]

From Flip FET to Flip 3D Integration (F3D): Maximizing the Scaling Potential of Wafer Both Sides Beyond
Conventional 3D Integration
Heng Wu, Peking University, China
Track 4 Memory Technologies T-4-2
Venue: Conference Hall 4&5, 2/F, 8W & 10W

9:25am T-4-2-1 [Invited]

A Perspective on Low Voltage Operating Ferroelectric Random-Access Memories Based on Ferroelectric
(Hf,Zr)O2
Min Hyuk Park, Seoul National University, South Korea

9:45am T-4-2-2 [Invited]

Reliability Optimization in Hafnium Oxide Based Ferroelectric Field-effect Transistors (FeFETs)
Kechao Tang, Peking University, China

10:05am T-4-2-3
Comprehensive Investigation of the Disturb and Retention Issues in Scaled FeNAND Arrays
Yuejia Zhou,Kechao Tang,Ru Huang, Peking University, China

10:20am T-4-2-4
Unveiling the Role of Oxygen Vacancy Inhomogeneity in Enhancing the Reliability of Ferroelectric HfO₂/ZrO₂
Superlattice Structures
Boyao Cui, Maokun Wu, Sheng Ye,Xuepei Wang,Yuchun Li,Yishan Wu,Yichen Wen,Jinhao Liu,Zhigang
Ji,Hongliang Lu,David Wei Zhang,Runsheng Wang, Ru Huang, Shanghai Jiaotong Unversity, China

10:35am T-4-2-5
A Novel Superlattice HfO2-ZrO2 Ferroelectric Tunnel FET for Overall Improvement in Memory Window, EOT
and Disturb Immunity
Shaodi Xu, Zhiyuan Fu,Shengjie Cao,Yue Yu,Hao Zheng,Qianqian Huang,Ru Huang, Peking University, China

Track 5 Photonics, Imaging and Display T-5-3

Venue: Multifunction Hall 1, 2/F, 17W

9:25am T-5-3-1
Phonon-mediated long-wave infrared response in PbSe/SrTiO3 heterostructure
Bowen Guo, Yu Wan,Zhe Cheng,Qisheng Wang, Nanchang University, China

9:40am T-5-3-2
Ultrafast Photoresponse of Vertical Diodes Utilizing WSe2/ITO Schottky Junctions
Xixi Jiang,Jingli Wang,Shukui Zhang,Qingqing Sun,Jiewei Chen,Yang Chai, The Hong Kong Polytechnic
University, Hong Kong

9:55am T-5-3-3
Van der Waals Interfacial Engineering for High-Performance Macroscopic Assembled Graphene (MAG)-Silicon
Schottky Photodiodes
Srikrishna Chanakya Bodepudi, Muhammad Abid Anwar,Muhammad Malik,Xiaolei Ding,Yance Chen,Yue
Dai,Zongwen Li,Zhi-Xiang Zhang,Yunfei Xie,Wenzhang Fang,Huan Hu,Bin Yu,Yang Xu, College of Integrated
Circuits, Zhejiang University, China

10:10am T-5-3-4
Polarization regulation in AlGaN solar-blind ultraviolet photodetectors
Bingxiang Wang,Ke Jiang,Tong Fang,Xiaojuna Sun,Dabing Li, Changchun Institute of Optics, Fine Mechanics
and Physics, Chinese Academy of Sciences, China, China
10:25am T-5-3-5
Pixelated Germanium-on-Silicon Photodetector with High Responsivity for Short Wavelength Infrared Imaging
Zhou Zhou,Chao Gao,Xin Jin,Xiaolin Liu,Kai Wang, Sun Yat-sen University, China

10:40am T-5-3-6
Graphene/Silicon Pixel Array with Integrated Imaging and Readout System
Yuan Ma,Zongwen Li,Youshui He,Qianqian Zhang,Yunfei Xie,Zhi-Xiang Zhang,Feng Tian,Muhammad Abid
Anwar, Muhammad Malik,Srikrishna Chanakya Bodepudi,Bin Yu,Yuda Zhao,Yang Xu, Zhejiang University, China

Track 6 Wide-Bandgap Power and RF Devices T-6-2

Venue: Multifunction Hall 2&3, 2/F, 17W

9:25am T-6-2-1 [Invited]

50 nm GaN HEMTs Technology with High Frequency, low Noise, and High JFoM
Yun Zhang, University of Chinese Academy of Sciences, China

9:45am T-6-2-2 [Invited]

GaN-on-silicon microwave transistors without any C or Fe doping
Digbijoy Nath, Indian Institute of Science; Agnit Semiconductors, India

10:05am T-6-2-3
S-band Internally Matched GaN Power Amplifiers
Li Zhang,Xuefeng Zheng,Zheng Chen,Changcheng Zhang,Zhida Wu,Zhipeng Ren,Pengbo Du,Hanbin Qu, Xidian
University, China

10:20am T-6-2-4
Optimization of Scaling-Down Performance in Sub-100 nm AlGaN/GaN HFETs Based on Electron velocity
modulation
Wang Mingyan,Yuanjie Lv,Heng Zhou,Chao Liu,Peng Cui,Zhaojun Lin,Sen Huang, Institute of Microelectronics,
Chinese Academy of Sciences, China

10:35am T-6-2-5
Improved Ohmic Contact Resistance and DC Performance of InAlN/GaN HEMTs with Si-incorporated Contact
Scheme
Yang Jiang,Fangzhou Du,Xinyi Tang,Ziyang Wang,Kangyao Wen,Zhongrui Wang,Qing Wang,Hongyu Yu,
Southern University of Science and Technology, China

Track 9 Packaging and Heterogenous Integration T-9-1

Venue: Function Hall, 1/F, 12W

9:25am T-9-1-1 [Keynote]

Opportunities for Wide and Ultrawide Bandgap Devices with Heterogenous Integration
Martin H H Kuball, University of Bristol, UK

9:55am T-9-1-2 [Invited]

Advanced Micro-Transfer Printing Technology for Heterogeneous Integration
Yunda Wang, Hong Kong University of Science and Technology, Hong Kong
10:15am T-9-1-3
Monolithic heterogeneous integration strategy of III-Nitrides
Rui He,Renfeng Chen,Junxue Ran,Junxi Wang,Tongbo Wei, Institute of semiconductor, Chinese Academy of
Sciences, China

10:30am T-9-1-4
Synergistic Optimization of Thermal and Electrical Performances in Hetero-integrated β-Ga2O3 SBDs
Yinfei Xie,Yang He,Zhengyue Li,Wenhui Xu,Tiangui You,Xin Ou,Huarui Sun, Harbin Institute of Technology,
Shenzhen, China

Track 13 Disruptive Technologies (Metaverse, Neuromorphic Computing, Quantum

Computing) T-13-2
Venue: Conference Hall 6&7, 2/F, 8W & 10W

9:25am T-13-2-1 [Invited]

Dual Driven Approaches for General Purposed Brain Inspired Computing
Si Luping, Tsinghua University, China

9:45am T-13-2-2 [Invited]

Heterogeneously Integrated Intelligent System for Learning at the Edge
Peng Lin, Zhejiang University, China

10:05am T-13-2-3
Novel Ferroelectric Tunnel FET-based Computing-in-memory with In-situ XOR Cipher-Encrypted AND-Type
Multiply-Accumulate for Secure Edge AI
Jin Luo,Zhiyuan Fu,Qianqian Huang,Ru Huang, Peking University, China

10:20am T-13-2-4
Electrical Tunability in Band-to-Band-Tunneling based Neuron for Low Power Neuromorphic Computing
Shubham Patil,Jayatika Sakhuja,Anmol Biswas,Hemant Hajare,Abhishek Kadam,Shreyas Deshmukh,AJAY
KUMAR SINGH,Sandip Lashkare,Nihar Ranjan Mohapatra,Udayan Ganguly, IIT Bombay, India

10:35am T-13-2-5
Novel Hybrid Gate Ferroelectric Transistor-based Weight Device with High Linearity and Symmetry for On-Chip
Learning
Yuxin Lin,Jin Luo,Zerui Chen,Qianqian Huang,Ru Huang, Peking University, China

10:50am to 11:00am
Coffee Break
11:00am to 12:30pm
Track 4 Memory Technologies T-4-3
Venue: Conference Hall 4&5, 2/F, 8W & 10W

11:00am T-4-3-1 [Invited]

Nanorods-based Memristors : Advancing Bio-inspired System and Neuromorphic Computing
Jung Ho Yoon, Sungkyunkwan University (SKKU), South Korea

11:20am T-4-3-2 [Invited]

High Density and High Reliability (H2DR) RRAM for Advanced Memory Technology
Zongwei Wang, Peking University, China

11:40am T-4-3-3
4.6-bits-per-cell Resistive Probabilistic-bit Computing for High-efficient Evaluation of Bio-Genomic Evolution
Achieving 6.25x Acceleration of Data-operations
E-Ray Hsieh, Kai-Wen Cheng, National Central University, Taiwan

11:55am T-4-3-4
An RRAM-based Multi-Mode and Pipelined Pooling Scheme in Computing-in-Memory for Convolutional Neural
Networks
Yi Gao,Yimao Cai,Ru Huang,Zongwei Wang,Lin Bao, Peking University, China

12:10pm T-4-3-5
4F2/bit Memristive Multi-bit Content Addressable Memory Enabled by Nonlinear Encoding for In-Memory
Similarity Search
Tong Hu,Yibai Xue,Yingjie Yu,Wenbin Zuo,Jiancong Li,Yi Li,Xiangshui Miao, School of Integrated Circuits,
Huazhong University of Science and Technology, China

Track 5 Photonics, Imaging and Display T-5-4

Venue: Multifunction Hall 1, 2/F, 17W

11:00am T-5-4-1
Selective-Attention Neuromorphic Vision Classifications Based on α-In2Se3/Bi2O2Se Ferroelectric-
Semiconductor Heterotransistors
Xinrui Guo,Yu Zhu,Shuo Liu,Junling Liu,Ru Huang, Ming He, Peking University, China

11:15am T-5-4-2
Optoelectronic Multiplication Emulator Based on FPGA
Jinxian Li,Runyu Hu,Jiabin Shen,Zengguang Cheng,Peng Zhou, Fudan University, China

11:30am T-5-4-3
Reconfigurable and nonvolatile graphene photodetector integrated onto photonic crystal waveguide
Ruijuan Tian,Yu Zhang,Zhipei Sun,Xuetao Gan, Aalto University, Finland

11:45am T-5-4-4
Bionic eye with color vision, environmental adaptivity and neuromorphic signal processing functions
Zhenghao Long,Xiao Qiu,Chak Lam Jonathan Chan,Zhibo Sun,Zhengnan Yuan,Zhiyong Fan, The Hong Kong
University of Science and Technology, Hong Kong

12:00pm T-5-4-5
Modeling Nanowire Single-Photon Avalanche Detectors via Deep Neural Networks
Boyang Zhang,Zhe Li,Zhongju Wang,Daoyi Dong,Lan Fu, The Australian National University, Australia
12:15pm T-5-4-6
Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN van der Waals Junction
Yang Chen,Yuanyuan Yue,Bingchen Lv,Jin Zhang,Xiaoyu Wei,Xiaojuan Sun,Dabing Li, Changchun Institute of
Optics, Fine Mechanics and Physics, China

12:30pm T-5-4-7
Novel High-Efficiency Large-Area Optical-to-Optical Conversion Integrated Device for Optical Signal Processing
Yahui Su,Shanjing Liu,Peixuan Song,Peiran Du,Hui Wang,Juan Li, Institute of Photoelectronic Thin Film Devices
and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, China

Track 6 Wide-Bandgap Power and RF Devices T-6-3

Venue: Multifunction Hall 2&3, 2/F, 17W

11:00am T-6-3-1 [Invited]

Technologies of GaN Power Integration and Modeling
Sheng Li, Southeast University, China

11:20am T-6-3-2 [Invited]

The Atomic Layer Etching Technique with Low Damage for p-GaN/AlGaN/GaN Structure
Hongyu Yu, Southern University of Science and Technology, China

11:40am T-6-3-3 [Invited]

Polarization-engineering for high-performance GaN power devices
Elison Matioli, EPFL, Switzerland

12:00pm T-6-3-4
Dynamic Performance Analysis of Ultra-fast Inverter based on Tri-gate AlGaN/GaN MIS-HEMTs
Yunsong Xu,Weisheng Wang,Dechang Quan,Haotian Ji,Shenlei Ding,Yunzhou Jiang,Kain Lu Low,Jiangmin
Gu,Wen Liu, Xi'an Jiaotong-Liverpool University, China

12:15pm T-6-3-5
High Performance 4H-SiC DSRD With 1.4kV peak voltage ,400ps risetime and 1-MHz Continuous Repetition-
rate
Yu Zhou,jingkai Guo,Dengyao Guo,Fengyu Du,Lejia Sun,Xiaoyan Tang,qingwen song,Yuming Zhang, Xidian
university, China

Track 7 Modeling and Simulation T-7-3

Venue: Function Hall, 1/F, 12W

11:00am T-7-3-1 [Invited]

Neural Network Assisted MOSFETs Gate Dielectric Traps Extraction
Xiaoyan Liu, Peking University, China

11:20am T-7-3-2 [Invited]

BSIM-NN: A Machine Learning Compact Model for Fast IC Simulation
Chien-Ting Tung, UCB, USA

11:40am T-7-3-3 [Invited]

Novel Device Modeling Framework with a Foundation Model and Task-Specific Sub-Models
Hyubno Cho, Alsemy Inc., South Korea
12:00pm T-7-3-4
Physics-Informed Neural Network for Predicting Out-of-Training-Range TCAD Solution with Minimized Domain
Expertise
Albert Lu,Yu Foon Chau,Hiu Yung Wong, San Jose State University, United States

12:15pm T-7-3-5
A Particle Swarm Optimization Algorithm Based Parameters Extraction Technique to Model Organic Light-
emitting Diode for Flexible Displays
Jianhui Wanghe,Jiachen Kang,Wei Tang,Gufeng He, Shanghai Jiao Tong University, China

Track 10 Sensor, MEMS, Bio-electronics T-10-3

Venue: Grand Hall A, 1/F, 12W

11:00am T-10-3-1 [Invited]

A compact 256-channel CMOS brain surface recording and stimulation array with soft electrodes
David Tsai, The University of New South Wales, Australia

11:20am T-10-3-2 [Invited]

Unconventional Bandpass Filter for Noise Reduction in Bioelectronics
Tae-il Kim, Sungkyunkwan University, South Korea

11:40am T-10-3-3 [Invited]

Rapid Customizing of Flexible OECTs Arrays for Low-Cost Biosensing and Biocomputing
Shiming Zhang, The University of Hong Kong, Hong Kong

12:00pm T-10-3-4 [Invited]

A fusion of optical microscopy and functional nanomaterials for subcellular-scale thermodynamic control of
muscle contraction
Madoka Suzuki, Institute for Protein Research, Osaka, Japan

Track 12 Nanotechnologies T-12-1

Venue: Charles K Kao Auditorium, 1/F, 8W & 10W

11:00am T-12-1-1 [Invited]

On the scalability of nanosheet oxide semiconductor transistors
Masaharu Kobayashi, The University of Tokyo, Japan

11:20am T-12-1-2 [Invited]

Boosted Performance of Atomic-Layer-Deposited Dual-Gate Indium-Gallium-Zinc-Oxide Transistors
Yanqing Wu, Peking University, China

11:40am T-12-1-3
A Transistor-Free Analog Content Addressable Memory with High Bit Density
Renhao XUE,Quanyi TU,Mansun CHAN,Xiwen LIU, The Hong Kong University of Science and Technology
(Guangzhou), China

11:55am T-12-1-4
A variability-aware data preprocessing method for data-driven memristive device inverse modeling
ZhouJie Pan,Yanming Liu,Daixuan Wu,Zihan Zhang,He Tian, Tsinghua University, China
12:10pm T-12-1-5
Low-Complexity Method for Shortest Path Optimization Problems based on Nanowire Memristor Network
Yanming Liu,Shenghao Wu,Ming Jian,Daixuan Wu,Yanxi Long,He Tian, TsingHua University, China

12:25pm T-12-1-6
Impact of Sb2Se3 annealing on the photoresponse of TiO2/Sb2Se3/Si back-to-back photodiodes
Bangsen Ouyang,Yang Chai,Jialiang Wang, The Hong Kong Polytechnic University, Hong Kong

12:40pm T-12-1-7
Flexible and Skin-Compatible rGO/PVDF Composite Sensor for Multi-Functional On-Skin Applications
Zijia Su,Luqi Tao,Liwei Liang,Zhifei Xie,Tianling Ren,Yi Yang, Tsinghua University, China

Track 13 Disruptive Technologies (Metaverse, Neuromorphic Computing, Quantum

Computing) T-13-3
Venue: Conference Hall 6&7, 2/F, 8W & 10W

11:00am T-13-3-1 [Invited]

Theoretical Design of Silicon-Based Nanostructures for Spin Qubits
Junwei Luo, Institute of Semiconductors, Chinese Academy of Science, China

11:20am T-13-3-2
Ferroelectric In2Se3 transistors with multi-terminal plasticity for highly efficient hardware implementation of
reinforcement learning
Yasai WANG,Weiwei Xiong,Jianmin Yan,Yue Zhou,Chaoyi Zhu,Xiangshui Miao,Yuhui He,Yang Chai, The Hong
Kong Polytechnic University, Hong Kong

11:35am T-13-3-3
Valley Transistors as Graded Neurons for Accurate Action Recognition
Jiewei Chen,Wenxiao Wang,Yue Zhou,Yang Chai, The Hong Kong Polytechnic University, Hong Kong

11:50am T-13-3-4 [Invited]

Neuromorphic Multisensory Numerosity Perception Enhanced by a Tactile Glove
Hongwei Tan, Max Planck Institute for Polymer Research, Germany

12:10pm T-13-3-5
Spintronic Stochastic Neuron -based Deep Belief Networks for Image Classification
Aijaz Lone,Meng Tang,Daniel N. Rahimi,Divyanshu Divyanshu,Camelia Florica,Selma Amara,Hossein
Fariborzi,Gianluca Setti, King Abdullah University of Science and Technology, Saudi Arabia
12:30pm to 1:30pm
Lunch
Venue: Grand Hall B, 1/F, 12W

12:45-2:00pm
IEEE EDS Women in Electron Devices (WiED/Young Professionals (YP) Panel Session
Theme: Empowering Innovators: Women and Young Professionals Pioneering the Future of
Electronics
Venue: Conference Hall 4&5, 2/F, 8W&10W

12:45pm-2:00pm
Neuromorphic rump Session
Venue: Grand Hall A, 1/F, 12W

12:30pm to 3:00pm
Poster Session#1
Venue: Grand Hall B, 1/F, 12W

3:00pm to 4:30pm Track 1 Materials T-1-1

Venue: Charles K Kao Auditorium, 1/F, 8W & 10W

3:00pm T-1-1-1 [Invited]

Materials for Thermal Dissipation Applications in Stacked Devices
Wei-Yen Woon, TSMC, Taiwan

3:20pm T-1-1-2 [Invited]

Innovation of BEOL Technology for New IMD Low-k Film
Kangsub Yim, Samsung, South Korea

3:40pm T-1-1-3 [Invited]

2D Materials for Neuromorphic Computing Devices
Max Lemme, RWTH Aachen University, Germany

4:00pm T-1-1-4 [Invited]

High Dielectric Constant of HfO2 Technology for Memory Applications
Min-Hung Lee, National Taiwan University, Taiwan

4:20pm T-1-1-5 [Invited]

Phase Change Memory: From Technological Challenges to Materials Science
Zhitang Song, Shanghai Institute of Microsystem and Information Technology, CAS, China
Track 4 Memory Technologies T-4-4
Venue: Conference Hall 4&5, 2/F, 8W & 10W

3:00pm T-4-4-1 [Invited]

Integration of 2D Ultrafast Flash Memory: From Device to Chip
Chunsun Liu, Fudan University, China

3:20pm T-4-4-2 [Invited]

High-Frequency Capacitance Measurement Techniques and Their Applications in Memory Technology
Development
Liang Zhao, Zhejiang University, China

3:40pm T-4-4-3 [Invited]

Reconfigurable magnonic devices for spin-wave manipulation on the nanoscale
Huajun Qin, Wuhan University, China

4:00pm T-4-4-4
Adaptive Update Precision with Reduced Iterative Write Cycles for Efficient Training Neural Networks on
ECRAM arrays
Peihong Li,Peng Chen,Peng Lin,Gang Pan, Zhejiang University, China

4:15pm T-4-4-5
Enabling Artificial Spiking Sensory Neurons with a Single Flexible VO2 Mott Memristor for Neuromorphic
Sensing
Chuanyu Han,Shujing Zhao,Shengli Fang,Shi Quan Fan,Weihua Liu,Xin Li,Li Geng, Xi'an Jiaotong University,
China

Track 6 Wide-Bandgap Power and RF Devices T-6-4

Venue: Multifunction Hall 2&3, 2/F, 17W

3:00pm T-6-4-1
GIT-Based Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform
Chengcai Wang,Jinjin Tang,Junting Chen,Mengyuan Hua, South University of Science and Technology, China

3:15pm T-6-4-2
Effect of Gate Voltage Rise Time on Gate Charges for GaN HEMTs with Partially Depleted p-GaN Cap Layer
Ruize Sun,Renjie Wu,Yunfei Ma,Wenhan Yuan,Qinan Guo,Wanjun Chen,Bo Zhang, University of Electronic
Science and Technology of China, China

3:30pm T-6-4-3
Deeply Scaled Gate Field Plate to Suppress Drain-Induced Dynamic Threshold Voltage Instability in Schottky-
Type p-GaN Gate HEMT
Chen Wang,Xin Wang,Junjie Yang,Hongjie Peng,Wenbo Xia,Jiayin He,Ju Gao,Chengkang Ao,Ziheng Liu,Jin
Wei,Jinyan Wang, Peking University, China

3:45pm T-6-4-4
9-kV p-GaN Gate HEMT with Gate Termination Extension Demonstrated on Sapphire Substrate for Improved
Breakdown Voltage
jingjing yu,Junjie Yang,Jiawei Cui,Hao Chang,Sihang Liu,Yunhong Lao,Xuelin Yang,Xiaosen Liu,Jin Wei,Maojun
Wang,Bo Shen, Peking University, China
4:00pm T-6-4-5
Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V
p-GaN Gate HEMT Using Virtual-Body Technology
Hao Chang,junjie yang,Jingjing Yu,jiawei cui,youyi yin,han yang,xuelin yang,jinyan wang,maojun wang,bo
shen,jin wei, Peking University, China

4:15pm T-6-4-6
Optimized Electric Field Distribution and Dynamic Performance in GaN HEMTs using Segmented-Extended p-
GaN Gate Structures
Xinyue Dai,Haiyang Li,Qimeng Jiang,Xiaoping Wang,Yuxi Wan, Shenzhen Pinghu Laboratory, China

Track 7 Modeling and Simulation T-7-4

Venue: INNO2 Multifunction Hall 1, 2/F, 17W

3:00pm T-7-4-1 [Invited]

Compact Modeling of GaN Based RF Switches
Yogesh Singh Chauhan, IIT Kanpur, India

3:20pm T-7-4-2 [Invited]

Physics of Operation of GaN Power Devices: Modeling Device and Circuit Effects using MIT Virtual Source
GaNFET (MVSG) Model
Ujwal Radhakrishna, Texas Instruments, USA

3:40pm T-7-4-3 [Invited]

TDA (Thermal Design Automation) for Multiscale Thermal Managements of GaN HEMTs
Bing-Yang Cao, Tsing Hua University, China

4:00pm T-7-4-4 [Invited]

Characterization of self-heating using the AC conductance method
Andries Scholten, NXP Semiconductors, The Netherlands

4:20pm T-7-4-5 [Invited]

Benefits of Using High-Resistivity Substrates for RF Ics
Albert Wang, University of California, Riverside, United States

Track 10 Sensor, MEMS, Bio-electronics T-10-4

Venue: Function Hall, 1/F, 12W

3:00pm T-10-4-1 [Invited]

An energy-efficient microwave magnetic field generator for NV center quantum magnetometers based on an
array of four injection-locked VCOs
Jens Anders, University of Stuttgart, Germany

3:20pm T-10-4-2 [Invited]

Integrated MEMS Diamond Quantum Magnetometer with Active Laser Noise Suppression
Zhenyu Wu, Shanghai Institute of Microsystem and Information Technology, China

3:40pm T-10-4-3 [Invited]

quantum sensing nonlinearity in magnetic response
Sen Yang, Hong Kong University of Science and Technology, Hong Kong
4:00pm T-10-4-4 [Invited]
Quantum Nanophotonics with Hexagonal Boron Nitride
Igor Aharonovich, University of Technology Sydney, Australia

Track 11 Flexible and Wearable Electronics T-11-2

Venue: Grand Hall A, 1/F, 12W

3:00pm T-11-2-1 [Keynote]

Electronic Fabrics and Wearable Systems: Design, Fabrication, Evaluation
Xiaoming Tao, Hong Kong Polytechnic University, Hong Kong

3:25pm T-11-2-2 [Invited]

Carbon Nanotube-Based High-Performance Bioelectronics
Youfan Hu, Peking University, China

3:45pm T-11-2-3 [Invited]

From Monitoring to Modulation: Intelligent Wearable Devices for Health Sensing and Drug Delivery
Ni Zhao, The Chinese University of Hong Kong, Hong Kong

4:05pm T-11-2-4
Direct 3D force mapping enabled by flexible single-crystal piezoelectric sensor array
Jiefei Zhu,Changjian Zhou,Min Zhang, The Chinese University of Hong Kong, Shenzhen, China

Track 13 Disruptive Technologies (Metaverse, Neuromorphic Computing, Quantum

Computing) T-13-4
Venue: Conference Hall 6&7, 2/F, 8W & 10W

3:00pm T-13-4-1 [Invited]

Strategies for Reliable Emerging Memories and Their Applications
Shinhyun Choi, KAIST, South Korea

3:20pm T-13-4-2 [Invited]

Spintronic foundation cells for scalable unconventional computing
Qiming Shao, Hong Kong University of Science and Technology, Hong Kong

3:40pm T-13-4-3
Spatiotemporal Encoding Based on Mott Spiking Neurons for Sound Localization
Zihan Guo,Linbo Shan,Zongwei Wang,Yimao Cai,Xing Zhang,Ru Huang, Peking University, China

3:55pm T-13-4-4
Investigation of Effects of Non-Volatile Memory-based Computation-in-Memory Non-Idealities and Model Size
on Performance and Robustness of Small Language Model During Inference Phase
Adil Padiyal,Tao Wang,Naoko Misawa,Chihiro Matsui,Ken Takeuchi, The University of Tokyo, Japan

4:10pm T-13-4-5
Efficient Implementation of 16 Reconfigurable Boolean Logics Based on Memristors and Their Application in
Image Edge Detection
Zhouchao Gan,Yifeng Xiong,Fan Yang,Xiangshui Miao,Xingsheng Wang, Huazhong University of Science and
Technology, China
4:30pm to 4:40pm
Coffee Break

4:40pm to 6:00pm
Track 4 Memory Technologies T-4-5
Venue: Conference Hall 4&5, 2/F, 8W & 10W

4:40pm T-4-5-1
Demonstration of Reliable Magnetic Shift Register Reading Using 50 nm MTJs on CMOS IC towards 3D Ultra-
High Density Memory
Susumu Hashimoto,Nobuyuki Umetsu,Yasuaki Ootera,Jun Iwata,Michael Quinsat,Yoshihiro Ueda,Naoharu
Shimomura,Hiroki Tokuhira,Shinji Miyano,Masatoshi Yoshikawa,Tsuyoshi Kondo,Masumi Saitoh,Masaki Kado,
Kioxia Corporation, Japan

4:55pm T-4-5-2
A novel transistor free design of SOT-MRAM written by unipolar current with record bit cell size (15F2)
Meiyin Yang,Lei Zhao,Bowen Yang,Bowen Shen,Yanru Li,Peiyue Yu,Jianfeng Gao,Ruipeng Shi,Zhuangzhuang
Ye,Shuo Xu,Yan Cui,Xiaolei Yang,Ming Wang,Shikun He,Jun Luo, Institute of Microelectronics, CAS, China

5:10pm T-4-5-3
Temperature Dependent Back-hopping in Spin Transfer Torque Switching of Perpendicular Magnetic Tunnel
Junctions
Yapeng Zhao, Fuzhou University-Jinjiang Joint Institute of Microelectronics and School of Physics, Information
Engineering and Microelectronics, Fuzhou University, Fuzhou 350108, China

5:25pm T-4-5-4
Thermal Stability of TiO2 Channel FE-VNAND: From Fabrication to High-Temperature Operation
Xujin Song,Dijiang Sun,Xiaoyan Liu,Jinfeng Kang, Peking University, China

5:40pm T-4-5-5
Comprehensive Modeling of Ferroelectric Tunnel Junctions: Variability Analysis and Device Design
Jiajun Qiu,Ning Ji,Hao Li,Ning Feng,Runsheng Wang,Ru Huang,Lining Zhang, Peking University, China

5:55pm T-4-5-6
Data Retention in co-doped HZO FeCAPs: Roles of FE Thickness and Thermal Budget
Justine BARBOT,Markus Peller,Isaac Emanuel Robert,Kerstin Bernert,Hannes Maehne,Steffen Thiem,David
Lehninger,Ayse Sünbül,Konrad Seidel,Thomas Kämpfe, X-FAB Semiconductor Foundries AG, Germany

Track 6 Wide-Bandgap Power and RF Devices T-6-5

Venue: Multifunction Hall 2&3, 2/F, 17W

4:40pm T-6-5-1 [Invited]

4H-SiC semiconductor for EV and beyond
Hongchao Liu, YASC, China

5:00pm T-6-5-2 [Invited]

Heterointegrated Ga2O3-on-SiC RF MOSFETs
Jiandong Ye, Nanjing University, China

5:20pm T-6-5-3 [Invited]

Recent research on ultrawide bandgap semiconductor Ga2O3 and AlN
Daohua Zhang, Shenzhen Pinghu Laboratory, China
5:40pm T-6-5-4
Efficiency Analysis of Large-Area β-Ga2O3 Schottky Barrier Diodes for DC-DC Converter
Yuru Lai,Chenxi Li,Shengliang Cheng,Huaxing Jiang,Leidang Zhou,Zimin Chen,Yanli Pei,Gang Wang,Xing Lu,
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information
Technology, Sun Yat-sen University, China

5:55pm T-6-5-5
High-performance Cu2O/Ga2O3 Heterojunction Diodes for Power Electronics
Xiaohui Wang,Mujun Li,Minghao He,Chun-Zhang Chen,Haozhe Yu,Long Chen,Qing Wang,Hongyu Yu, Southern
University of Science and Tenchnology, China

Track 7 Modeling and Simulation T-7-5

Venue: INNO2 Multifunction Hall 1, 2/F, 17W

4:40pm T-7-5-1 [Invited]

G-Universe: A Collection of In-House Technology Computer-Aided Design Simulators as a Platform for
Developing New Simulation Capabilities
Sung-Min Hong, Gwangju Institute of Science and Technology, South Korea

5:00pm T-7-5-2 [Invited]

The IHP OpenPDK Initiative: the status and roadmap
Wladek Grabinski, MOS-AK, Switzerland

5:20pm T-7-5-3
Enhancing CAD Workflows: Heterogeneous Graph Attention Networks for Efficient Routing Congestion
Prediction in Chip Design
Qingyuan Yang,Mingkun Xu,Hongyi Li,Yu Du,Dahu Feng,Rong Zhao, Tsinghua University, China

5:35pm T-7-5-4
A Model-driven Design Technology Co-optimization (DTCO) with Multi-Objective Bayesian Algorithm for
Advanced Technology
Baokang Peng,Guoyao Cheng,Runsheng Wang,Ru Huang,Mansun Chen,Lining Zhang, Peking University, China

5:50pm T-7-5-5
Optimization of the Read Transistor in Hybrid 2T0C DRAM by Co-modeling the Drain Current of a-IGZO and
Low Temperature Poly-Silicon TFTs
Haolin Li,Xiaoyan Liu,Zheng Zhou, Peking University, China

Track 8 Reliability and testing T-8-1

Venue: Grand Hall A, 1/F, 12W

4:40pm T-8-1-1 [Invited]

Degradation of the h-BN by defects generation
Marco A. Villena, University of Granada, Spain

5:00pm T-8-1-2 [Invited]

Understanding and benchmarking the reliability limitations of 2D electronics: from first prototypes to trial FAB
devices
Yury Illarionov, Southern University of Science and Technology, China
5:20pm T-8-1-3
On-Chip Robust Threshold-Type Resistive Switching using Hexagonal Boron Nitride
Osamah Alharbi,Sebastian Pazos,Kaichen Zhu,Fernando Aguirre,Yue Yuan,Huaqiang Wu,Xinyi Li,MARIO LANZA,
National University of Singapore, Singapore

5:35pm T-8-1-4
Wafer-Scale Fabrication of Janus-MXene Films and Its Based Flexible Artificial Synapse
Xin Liu,Conghui Zhang,Yuhang Yang,Peisong Liu,Shuiren Liu,Lingxian Meng,Fei Hui, Zhengzhou University,
China

5:50pm T-8-1-5
Pixel-to-Pixel Variance in Graphene-Silicon Photodetector Arrays
Muhammad Anwar,Muhammad Malik,Srikrishna Chanakya Bodepudi,Xiaolei Ding,Yance Chen,Zongwen Li,Zhi-
Xiang Zhang,Wenzhang Fang,Huan Hu,Bin Yu,Yang Xu, Zhejiang University, China

Track 10 Sensor, MEMS, Bio-electronics T-10-5

Venue: Function Hall, 1/F, 12W

4:20pm T-10-5-1 [Invited]

Nanodiamond quantum thermometers and their biological applications
Masazumi Fujiwara, Okayama University, Japan

4:40pm T-10-5-2 [Invited]

Development of an Inkjet-Printed Sensor using Ink locked Food-Based Nano Conductive paste for
Electrochemical sensing of Insulin: A First attempt
Sanket GOEL, BITS Pilani, India

5:00pm T-10-5-3 [Invited]

Operation principles and applications of ultra-sensitive optical detectors at nanoscale: Facts and artifacts
Taras Plakhotnik, The University of Queensland, Australia

5:20pm T-10-5-4 [Invited]

High performance pixel development for thin-film based image sensors
Jiwon Lee, Postech University, South Korea

5:40pm T-10-5-5
Design and Applicationn of a Multi-Mode Signal Co-detection System for Brian Signals
Jianbo Jiang, Xueying Wang, Huiran Yang, Ziyi Zhu, Dujuan Zou, Siyuan Ni, Zhengyu Liang, Guopei Zhou, Zhitao
Zhou, Liuyang Sun, Tiger H. Tao, Xiaoling Wei, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences, China
Track 13 Disruptive Technologies (Metaverse, Neuromorphic Computing, Quantum
Computing) T-13-5
Venue: Charles K Kao Auditorium, 1/F, 8W & 10W

4:40pm T-13-5-1 [Invited]

Flexible artificial neuromorphic electronic materials, devices and systems
Wentao Xu, Nankai University, China

5:00pm T-13-5-2 [Invited]

A bio-inspired ionic retina
Kai Xiao, Southern University of Science and Technology, China

5:20pm T-13-5-3
A Novel FeFET-based Thermometer-Encoded Multibit Content Addressable Memory for Manhattan Distance
Metric with High Area- and Energy-Efficiency
Weikai Xu,Zeyu Zhang,Qianqian Huang,Ru Huang, Peking University, China

5:35pm T-13-5-4
A Heterogeneous FTJ-Based Computing-in-Memory Architecture for Vision Transformer Acceleration via
Hardware and Algorithm Co-Design
Pinfeng Jiang,Zichong Zhang,Yifan Yang,Yilong Fang,Yi Wang,Mingde Zhu,Xiangshui Miao,Xingsheng
Wang,letian wang, Huazhong University of Science and Technology, China

5:50pm T-13-5-5
RRAM-Based Isotropic CNNs with High Robustness and Resource Utilization Rate
Wenyong Zhou,Yuan Ren,Jiajun Zhou,Ngai Wong,Zhengwu Liu,Chenchen Ding, The University of Hong Kong,
Hong Kong

EDS Special Session

Venue: Conference Hall 6&7, 2/F, 8W & 10W

4:40pm EDS-S1
Knowledge discovery from microscopic image data using an explainable AI “extended free energy model"
Prof. Masato Kotsugi, Tokyo University of Science, Japan

5:00pm EDS-S2
Optimal transfer learning strategies for property predictions in materials science
Prof. Sai Gautam Gopalakrishnan, Indian Institute of Science, Inida

5:20pm EDS-S3
High Temperature Superfluorescence Emitting Perovskite Materials
Prof. Kenan Gundogdu, North Carolina State University, USA

5:40pm 6EDS-S4
A Digital Twin for Advanced Manufacturing of Materials
Dr. Subramanian Sankaranarayanan, Argonne National Lab/University of Illinois, USA

7:00pm to 9:00pm Banquet

Venue: Club 1 Riviera, 2/F, Star Hall
Address: 55-57 Tai Chung Kiu Road, Shatin 沙田大涌橋路 55-57 號
**6:15pm Shuttle bus will be arranged to Banquet venue
12 March 2025 (Wednesday)
8:40am to 9:20am
Plenary #4
Venue: Grand Hall A, 1/F, 12W
Hanming Wu, Zhejiang University, China
The role of IDM-like pilot line in the integration of industry and education for the emerging
technologies

9:25am to 10:50am
Track 1 Materials W-1-2
Venue: Charles K Kao Auditorium, 1/F, 8W & 10W

9:25am W-1-2-1 [Keynote]

Van der Waals interface between dielectrics and atomically thin semiconductors
Manish CHHOWALLA, University of Cambridge, UK

9:45am W-1-2-2 [Invited]

Effect of Cu microstructures on Cu/SiO2 hybrid bonding for 3D IC heterogeneous integration
Chih Chen, National Yang Ming Chiao Tung University, Taiwan

10:05am W-1-2-3 [Invited]

2D MoS2 Thin-Film Transistors for Large-Area, Flexible Electronics
Jong Hyun Ahn, Yonsei University, South Korea

10:25am W-1-2-4 [Invited]

2D Materials Design for Angstrom-scale Devices : Innovations for Next-Generation Electronics
Hyeonjin Shin, GIST, South Korea

10:45am W-1-2-5 [Invited]

Evaluation of Insulator Candidates for Nanoelectronics Based on 2D Materials
Theresia Knobloch, TU Vienna, Austria

Track 2 Process, Tools Yield, and Manufacturing W-2-2

Venue: Function Hall, 1/F, 12W

9:25am W-2-2-1 [Invited]

Yield and Reliability Optimization of Analog RRAM for In-Memory Computing on a 28nm CMOS Platform
Bin Gao, Tsinghua University, China

9:45am W-2-2-2
Overlay-aware Variation Study of Flip FET and Benchmark with CFET
Wanyue Peng,Haoran Lu,Jingru Jiang,Jiacheng Sun,Ming Li,Runsheng Wang,Heng Wu,Ru Huang, School of
Integrated Circuits, Peking University, China

10:00am W-2-2-3
Experimental Investigation of Inserted HfO2 Impact on VFB and Interface via ALD for La2O3 Dipole-first Multi-
VT Techniques
Yanzhao Wei,Jiaxin Yao,Yu Wang,Qingzhu Zhang,Huaxiang Yin, Institute of Microelectronics of the Chinese
Academy of Sciences, China
10:15am W-2-2-4
Low Thermal Budget Ultrathin Ti Silicide for Advanced Backside Contact of Backside Power Delivery Network
(BSPDN)
Hongxu Liao,Xijun Zhou,Fangze Liu,Lanyi Xie,Haixia Li,Jieyin Zhang,Jianjun Zhang,Xiaoyan Xu,Xia An,Heng
Wu,Ru Huang,Ming Li, School of Integrated Circuits, Peking University, China

10:30am W-2-2-5
Multi-Scale Thermal Modeling of 3D-Heterogeneous Integrated Processing-Near-Memory Chip for Edge Large
Language Model Inference
Yuyao Lu,Yudeng Lin,Yiming Zhou,Xing Mou,Zhuodong Kang,Zhipeng Kuang,Peng Yao,Jianshi Tang,He
Qian,Huaqiang Wu,Awang Ma,Bin Gao, Tsinghua University, China

Track 3 Advanced Semiconductor (Logic) Devices W-3-4

Venue: Multifunction Hall 2&3, 2/F, 17W

9:25am W-3-4-1
Van der Waals Dielectrics and Electrodes in 2D Transistors for 2T0C DRAM
Jianmiao Guo,Ziyuan Lin,Cong Wang,Tianqing Wan,Jianmin Yan,Yang Chai, The Hong Kong Polytechnic
University, Hong Kong

9:40am W-3-4-2
Dual Functionality of MoS2 in nFET and pFET through Contact Metal Selection
Kwok Ho WONG,Mansun CHAN, Hong Kong University of Science and Technoloogy, Hong Kong

9:55am W-3-4-3
ALD-Derived High-Performance Transistors with Superior Crystal Structure through Sn Doping in IGO Thin-
Films
Gwang-Bok Kim,Jae Kyeong Jeong, Hanyang University, South Korea

10:10am W-3-4-4
Performance Analysis of n-type Stacked-Vertical FET for Enhanced in Advanced CMOS Applications
Yonghwan Ahn,Junjong Lee,Seunghwan Lee,Sanguk Lee,Kyeongrae Cho,Minchan Kim,Rockhyun Baek,
POSTECH, South Korea

10:25am W-3-4-5
Direct Backside Contact Impact on 3-dimensional Stacked FET SRAM Beyond 1nm Node
Mingyu Kim,Jaehyun Park,Sungil Park,Kyunghwan Lee,Deuk Ho Yeon,Daewon Ha,Hyungcheol Shin, SNU and
Samsung, South Korea

10:40am W-3-4-6
Circuit Polymorphism Enabled by RFET Devices Processed on Industrial FDSOI
Niladri Bhattacharjee,Giulio Galderisi,Yuxuan He,Violetta Sessi,Maximilian Drescher,Viktor Havel,Michael
Zier,Maik Simon,Kerstin Ruttloff,Annekathrin Zeun,Konstantin Li,Anna-Sophie Seidel,Carsten Metze,Michael
Grothe,Soeren Jansen,Mark Wijvliet,Shubham Ra, NaMLab gGmbH, Germany
Track 8 Reliability and testing W-8-2
Venue: Conference Hall 4&5, 2/F, 8W & 10W

9:25am W-8-2-1 [Invited]

Selecting Device, In-Memory Search, and Monolithic 3D Integration of RRAMs and 2D Devices Towards High
Reliability and High Efficiency
Rui Yang, Shanghai Jiao Tong University, China

9:45am W-8-2-2 [Invited]

2D Novel Antiferroelectric Materials for Neuromorphic Computing
Linfeng Sun, Beijing Institute of Technology, China

10:05am W-8-2-3
Energy-Efficient Temperature-Calibration Readout Circuits with Thermal-State Sensible Sampling and Zoom
Window Switch Scheme for RRAM-Based Analog Computing-in-Memory
Haisu Zhang,Linbo Shan,Qishen Wang,Zhuoya Chen,Zongwei Wang,Xiyuan Tang,Yunyi Fu,Yimao Cai,Ru Huang,
Peking University, China

10:20am W-8-2-4
Reliability-Aware Device and Programming Scheme Optimization for PBS/NBS-Immune IGZO-based 2T0C
DRAM
Zhidong Tang,Yanbo Su,Jianshi Tang,Yijia Fan,Yiwei Du,Mingcheng Shi,Yibei Zhang,Dong Wu,Bin Gao,He
Qian,Huaqiang Wu, Tsinghua University, China

10:35am W-8-2-5
Enhanced ESD Protection Techniques for 10V Neurostimulator Circuits in 65nm CMOS Technology
Tanay Das,Naef Ahmad,Laxmeesha Somappa,Sandip Lashkare, Indian Institute of Technology, Gandhinagar,
India

Track 10 Sensor, MEMS, Bio-electronics W-10-6

Venue: Grand Hall A, 1/F, 12W

9:25am W-10-6-1 [Invited]

In-Material Multimodal Physical Computing for Multisensory Integration
Ming He, Peking University, China

9:45am W-10-6-2 [Invited]

CMOS BEOL Compatible Metal-Oxides Logics and Memories for New Paradigm Computing in the Post-Moore
Era
Yida Li, Southern University of Science and Technology, China

10:05am W-10-6-3 [Invited]

Advanced electronic devices empowering opto-sensors for imaging and perception
Lai Wang, Tsinghua University, China

10:25am W-10-6-4 [Invited]

Microwave coherent storage based on the long lifetime cavity electromechanical system
Tiefu Li, Tsinghua University, China
Track 11 Flexible and Wearable Electronics W-11-3
Venue: INNO2 Multifunction Hall 1, 2/F, 17W

9:25am W-11-3-1 [Invited]

Biofuel Cell-Inspired Chemical Sensors for Monitoring Glutamate in Mammalian Central Nervous System
Jinghua Li, Ohio State University, USA

9:45am W-11-3-2 [Invited]

AI-boosted wireless near-infrared wearable sensing system for advancing muscle-tracking technology
Wubin Bai, University of North Carolina at Chapel Hill, USA

10:05am W-11-3-3
A Submersible Soft Robot with Ultrasonic Echolocation Capabilities
Guozhen Shen, Zhongming Chen, Qilin Hua,Jiaqiang Xu, Beijing Institute of Technology, China

10:20am W-11-3-4
Flexible pulse waveform sensor array for cuffless PWV measurement
Zhou Jiang,Cunman Liang,Ni Zhao, City University of Hong Kong, Hong Kong

Track 12 Nanotechnologies W-12-2

Venue: Conference Hall 6&7, 2/F, 8W & 10W

9:25am W-12-2-1 [Invited]

Optimization of Short-channel Top-gate MoS2 FETs via a Non-transfer Fabrication
Prof. Wenzhong Bao, Fudan University, China

9:45am W-12-2-2 [Invited]

Epitaxial Growth of Stacking Faults-free
Hexagonal Bilayer MoS2
Prof. Cheol-Joo Kim, Postech, Korea, South Korea

10:05am W-12-2-3 [Invited]

2-D FET Modeling: Why Incorporating the Gate- and Drain-Dependent Source Tunneling Barriers Matter
Dr. Cristine Jin Estrada, University of Santo Tomas, Philippines

10:25am W-12-2-4
A Controlled Metal Doping Method Based on MoS2 Top-gate Transistor
Wenzhong Bao,Zhejia Zhang,Jingjie Zhou,Saifei Gou,Yuxuan Zhu,Xiangqi Dong,Mingrui Ao,Qicheng Sun,Yuchen
Tian,Jinshu Zhang,Yan Hu,Xinliu He,Haojie Chen,Yufei Song,Jieya Shang,Zhengjie Sun,Xiaojun Tan, Fudan
University, China

10:40am W-12-2-5
Boosting 2D Transistor Performance via TiS2 van der Waals Contact Engineering
Jialei Miao,Heng Zhang,Zheng Bian,Tianjiao Zhang,Yuda Zhao, Zhejiang University, China

10:50am to 11:00am
Coffee Break
11:00am to 12:30pm
Track 1 Materials W-1-3
Venue: Charles K Kao Auditorium, 1/F, 8W & 10W

11:00am W-1-3-1 [Invited]

Field Effect Control of Electronic States in Correlated Materials
Hongtao Yuan, Nanjing University, China

11:20am W-1-3-2 [Invited]

Robust OS-FeFETs with Crystallized Anatase-TiO2 Channel-Hafnia Ferroelectric Layer Stack for Integration of
3D Memory Applications
Jinfeng Kang, Peking University, China

11:40am W-1-3-3 [Invited]

Innovative Phase/Structure-Engineered Two-Dimensional Layered Hybrid Films for Nanoelectronics
Yu-Lun Chueh, National Tsing Hua University, Taiwan

12:00pm W-1-3-4 [Invited]

Solution-Processed Reduced-Dimensional Cesium Lead Halide Perovskites
Annie NG, Nazarbayev University, Kazakhstan

12:20pm W-1-3-5 [Invited]

Spin injection in graphene using ferromagnetic indium-cobalt van der Waals contacts
Manish Chhowalla, University of Cambridge, UK

Track 2 Process, Tools Yield, and Manufacturing W-2-3

Venue: Function Hall, 1/F, 12W

11:00am W-2-3-1 [Invited]

Direct Evidence of Oxygen Vacancy Generation in Whole Gate Stacks Through Multiple Electrical and Atomic-
Scale Physical Methods as the Cause of Endurance Failure in FeFETs
Xiaolei Wang, IME, CAS, China

11:20am W-2-3-2
Remote effect of extra metal layer on TiN electrode on the ferroelectric properties of Hf0.5Zr0.5O2 thin films
Zhipeng Xue,Xiuyan Li,Jingquan Liu,Mengwei Si, Shanghai jiaotong University, China

11:35am W-2-3-3
Effect of Top Al2O3 Interlayer Thickness on the Memory Window of FeFETs with
TiN/Al2O3/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
Tao Hu,Runhao Han,Xinpei Jia,Jia Yang,Zeqi Chen,Xiaoqing Sun,Junshuai Chai,Hao Xu,Xiaolei Wang,Wenwu
Wang,Tianchun Ye, Institute of Microelectronics of the Chinese Academy of Sciences, China

11:50am W-2-3-4
Study of Threshold Voltage Degradation Mechanism of Ferroelectric Field-Effect Transistors (FeFETs) with
TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Stacks
Zeqi Chen,Tao Hu,Xinpei Jia,Runhao Han,Jia Yang,Yajing Ding,Xiaoqing Sun,Junshuai Chai,Hao Xu,Xiaolei
Wang,Wenwu Wang,Tianchun Ye, Institute of Microelectronics, Chinese Academy of Sciences, China

12:05pm W-2-3-5
The impact of DC stress on the recoverable tetragonal-to-orthorhombic phase transition in hafnium zirconium
oxide capacitors
Zhenyu Chen,Dan Lv,Zhiyu Lin,Dongdong Li,Mengwei Si, Shanghai Jiao Tong University, China
Track 4 Memory Technologies W-4-6
Venue: Multifunction Hall 2&3, 2/F, 17W

11:00am W-4-6-1
Oxidation of TiN Interface and Improvement of AlN Intercalation of ZrO2 Capacitor in DRAM
Songming Miao,Xinyi Tang,Yuanbiao Li,Guangwei Xu,Di Lu,Shibing Long, University of Science and Technology
of China, China

11:15am W-4-6-2
Low-Voltage Multi-Level Flash Memory Based on Intra-Float-Gate Charge Transfer
Yifan Chen,Qing Wang,Zongwei Shang,Mingmin Shi,Xijun Zhou,Xiaoyan Xu,Xia An,Ru Huang,Ming Li,Haixia Li,
Peking University, China

11:30am W-4-6-3
Oxygen Vacancy-Zr Content Synergy for Morphotropic Phase Boundary Towards High-performance DRAM
Applications
Jinhao Liu,Xuepei Wang,Maokun Wu,Boyao 崔,Yichen Wen,Yishan Wu,Sheng Ye,Pengpeng Ren,Runsheng
Wang,Zhigang Ji,Ru Huang, Shanghai Jiaotong Unversity, China

11:45am W-4-6-4
Research on Oxidizer Engineering of ALD for Industrial Production of ZrO2 Capacitor in DRAM
Xinyi Tang,Songming Miao,Yuanbiao Li,Di Lu,Shibing Long,Guangwei Xu, University of Science and Technology
of China, China

12:00pm W-4-6-5
Characterization of a 1T-Floating Body DRAM Cell in Bulk Silicon MOSFETs for Cryogenic Memory Applications
Hengxu Guo,Yuanke ZHANG,Yuefeng Chen,Haoyu Sheng,Chi Fang,Guoping Guo,Chao Luo, University of Science
and Technology of China, China

12:15pm W-4-6-6
Optimizing SiN Composition for Enhanced Charge-Trapping in Next-Generation 3D NAND Flash Memories
Tomoya Nagahashi,Hajime Karasawa,Ryota Horiike,Atsushi Oshiyama,Kenji Shiraishi, Nagoya University, Japan

Track 7 Modeling and Simulation W-7-6

Venue: INNO2 Multifunction Hall 1, 2/F, 17W

11:00am W-7-6-1
Physics-Based Circuit-Compatible Model of Polycrystalline Hafnia-based 3D Ferroelectric Capacitor for High-
Density Memory Applications
Minyue Deng,Jiayan Zhu,Chang Su,Liang Chen,Shengjie Cao,Qianqian Huang,Ru Huang, Peking University,
China

11:15am W-7-6-2
Modeling of the Switching Characteristics of Ag/HfO?-based Volatile Memristors
Qin Xie,Yikang Huo,Chunsheng Jiang, Guangxi Normal University, China
11:30am W-7-6-3
On the Evaluation of Remnant Polarization in 3D Cylindrical Hafnia-based Ferroelectric Capacitors
Yishan Wu,Puyang Cai,Junwei Guo,Haobo Lin,Xuepei Wang,Jinhao Liu,Boyao Cui,Yichen Wen,Maokun
Wu,Runsheng Wang,Sheng Ye,Haibao Chen,Pengpeng Ren,Zhigang Ji,Ru Huang, Shanghai Jiao Tong University,
China

11:45am W-7-6-4
Threshold Switching Memristor-Based Spiking Neuron Modeling and Simulation
Pengyu Liu,Lekai Song,Kong Pang Pun,Guohua Hu, The Chinese University of Hong Kong, Hong Kong

12:00pm W-7-6-5
Surrogate MTJ Model for Early-stage MRAM Macro Reliability Analysis
Quanhai Zhu,Hao Cai, Southeast University, China

12:15pm W-7-6-6
A Compact Model for GIDL-assisted Erase Transients of 3D MONOS Charge-Trap NAND Flash Memories
Chang Hyeok Im,Sungju Kim,Hyungcheol Shin, Seoul National University, South Korea

Track 8 Reliability and testing W-8-3

Venue: Grand Hall A, 1/F, 12W

11:00am W-8-3-1 [Invited]

Polyoxometalate-doped Memristor with Redox Dynamics for Reliable Single-component Artificial Neuron
Su-Ting Han, Hong Kong Polytechnic University, Hong Kong

11:20am W-8-3-2 [Invited]

HRS Retention of 28 nm BEOL integrated ReRAM
Stefan Wiefels, Forschungszentrum Jülich, Germany

11:40am W-8-3-3
Impact of Oxide Quality in Self-Aligned Block Region on Hot Carrier Degradation in n-Type CFP-LDMOS with
0.18 µm Bipolar-CMOS-DMOS Technology
Qiao Teng,Yixian Song,Junzhe Kang,Kai Xu,Dawei Gao, Zhejiang University, China

11:55am W-8-3-4
Effect of the Channel Thickness on the PBS Reliability and 1/f Noise of the ALD Ultrathin ITO Field-Effect
Transistor
Xuefei Li,Jiaming Zhao,Peiyan Hong, Huazhong University of Science and Technology, China

12:10pm W-8-3-5
Enhanced Gate Stack Reliability Test Framework for GaN HEMT in High-Stress Environments Leveraging on
Ramp and Constant Voltage Stress Protocols
Jerry Joseph James,Nagarajan Raghavan, Singapore University of Technology and Design (SUTD), Singapore
Track 9 Packaging and Heterogenous Integration W-9-2
Venue: Conference Hall 4&5, 2/F, 8W & 10W

11:00am W-9-2-1 [Invited]

Reliability in Heterogeneous Integration: A Theoretical View
Zhiping XU, Tsinghua University, China, China

11:20am W-9-2-2 [Invited]

Photonic chip-based continous wave optical parametric amplifiers
Johann Riemensberger, Norwegian University of Science and Technology, Norway, Norway

11:40am W-9-2-3
A Fan-Out Wafer-Level Packaging-Based THz Communication Transceiver System for High-Speed Chip-to-Chip
Wireless Interconnect Applications
Si Rui Liu,Ya Fei Wu,Zong Rui He,Yu Jian Cheng,Yang Chai, UESTC, China

11:55am W-9-2-4
A 1.8TB/s HBM Heterogeneously Integrated GPU Design Exploring 2.5D Packaging Technology
Shuang Wang,Weiliang Chen,Chen Jiang,Xueqing Li,Huazhong Yang, Tsinghua University, China

12:30pm to 1:30pm
Lunch
Venue: Grand Hall B, 1/F, 12W

12:30pm to 3:00pm
Poster Session#2
Venue: Grand Hall B, 1/F, 12W

3:00pm to 5:00pm
Track 1 Materials W-1-4
Venue: Charles K Kao Auditorium, 1/F, 8W & 10W

3:00pm W-1-4-1
Fully Tunable In-Memory Eligibility Traces Based on Ferroelectric-Semiconductor Field-Effect Transistors
Junling Liu,Xinrui Guo,Shuo Liu,Yu Zhu,Ming He, Peking University, China

3:15pm W-1-4-2
Breakthroughs in Undoped HfO2 Ferroelectric Capacitors Achieved through Enhanced Nanocrystallite Seeding
in As-Deposited Films via O2-Plasma ALD
Zongwei Shang,Changqing Ye,Hao Li,Xing Wu,Runsheng Wang,Ming Li,Ru Huang, Peking University, China

3:30pm W-1-4-3
Van der Waals epitaxy h-BN/AlN back barrier with controllable boron-diffusion for high-erformance
AlGaN/GaN HEMTs
Haidi Wu,Jing Ning,Jincheng Zhang,Yue Hao, Xidian University, China

3:45pm W-1-4-4
Realization of Wafer-scale AlScN ferroelectric films and the Investigation of AlScN/n-GaN Ferroelectric
Memristors
Mingrui Liu,Hang Zang,Shunpeng Lv,Zhiming Shi,Yuping Jia,Ke Jiang,JianWei Ben,Dan Li,Xiaojuan Sun,
Dabing Li, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China
4:00pm W-1-4-5
Elemental Sn promotes the formation of single-crystal e-Ga2O3 films in MOCVD
Long Wang, Xidian University, China

4:15pm W-1-4-6
High-Performance 2D FETs with Single-Crystal Anatase TiO2 High-? Dielectric
Ni Yang,Ji Zhang,Yu-Ming Chang,Fangyuan Zheng,Lingqi Li,Chenyang Li,Jian Liu,Dong-Keun Ki,Yi Wan,
Sean Li,Kah-Wee Ang,Jingkai Huang,Lain-Jong Li, The University of Hong Kong, Hong Kong

4:30pm W-1-4-7
Competing ferroelectric polarization and defect migration induced resistive switching in van der Waals ?-
In2Se3
Yinfeng Long,Saiyu Bu,Han Chen,Kai Liu,Shiyu Zhang,Lin WANG, Shanghai Jiao Tong University, China

4:45pm W-1-4-8
MoS2 transistors based 2T0C DRAM Optimized with Optical Modulation and Read Pulse Compensation
Gongpeng Lan,Dongdong Sun,Haotian Fang,Wuqing Fang,Yuanyuan Shi, University of Science and Technology
of China, China

Track 2 Process, Tools Yield, and Manufacturing W-2-4

Venue: Function Hall, 1/F, 12W

3:00pm W-2-4-1 [Invited]

Artificial Neural System Leveraging the Morphotropic Phase Boundary in Hafnia: Design and Experimental
Implementation
Sanghun Jeon, KAIST, South Korea

3:20pm W-2-4-2
BEOL-Compatible Multi-layer ITO-ZnO-ITO Channel FETs Achieving Enhanced Mobility, Positive VTH Shift, and
Improved PBTI
Ying Xu,Yiyuan Sun,Zijie Zheng,XIAO GONG, National University of Singapore, Singapore

3:35pm W-2-4-3
Indium-Tin-Oxide Transistor with Maximum Transconductance over 1100 μS/μm and Cut-Off Frequency of 23
GHz
Yuxuan Wang,Jiawei Xie,Zijie Zheng,Gerui Zheng,Rui Shao,Kaizhen Han,Yuye Kang,Xuanqi Chen,XIAO GONG,
National University of Singapore, Singapore

3:50pm W-2-4-4
Achieving High Endurance Ferroelectricity in Hf0.5Zr0.5O2 Thin Films on Ge Substrate through Helium Ion
Doping Engineering
Peiyuan Du,Huan Liu,Dongya Li,Chengji Jin,Hongrui Zhang,Di Wang,Yian Ding,Bing Chen,Ran Cheng,Mengnan
Ke,Xiao Yu,Yan Liu,Yue Hao,Genquan Han, Xidian University, China

4:05pm W-2-4-5
A Universal Method to Regulate Contact Resistance in Thin Film Transistors
Yanzhuo Wei,Guohui Li,Yanxia Cui,Hongwei Hao,Chen Chen,Dongdong Li,Shan-Ting Zhang, Zhangjiang
Laboratory, China

4:20pm W-2-4-6
Invertible Prediction Model for Si3N4 Wet Etching Using DHF
Koki Shibata,Takashi Ota,Koji Ando,Naoko Misawa,Chihiro Matsui,Ken Takeuchi, The University of Tokyo, Japan
4:35pm W-2-4-7
6-inch GaN-on-Si Gold-Free Fabrication Technolgies for Monolithic Microwave Integrated Circuits (MMICs)
Xiaojin Chen,Zhihong Liu,Jin Zhou,Peiyu Mao,Tong Wang,Zhenyuan Li,Hu Wei,Hanghai Du,Weichuan
Xing,Weihang Zhang,Xiangdong Li,Jincheng Zhang,Yue Hao, Xidian university, China
4:50pm W-2-4-8
Dependence of Dislocation Density Distribution on Radial Temperature Gradient in 300mm Si Wafer during
IGBT High Thermal Budget Process
Jiuyang Yuan,Bozhou Cai,Yoshiji Miyamura,Wataru Saito,Shin-ichi Nishizawa, Kyushu University, Japan

Track 4 Memory Technologies W-4-7

Venue: Multifunction Hall 2&3, 2/F, 17W

3:00pm W-4-7-1
Ag:SiOx-based Volatile Memristors for Dendritic Computations
Ruiqi Chen,Xiaoyan Liu,Yulin Feng,Nan Tang,Yiyang Chen,Hao Ai,Haozhang Yang,Zheng Zhou,Lifeng Liu,Jinfeng
Kang,Peng Huang, Peking University, China

3:15pm W-4-7-2
A High-Throughput Parasitic TRNG in Self-Rectifying Memristor based CIM for Edge Secure Computing
Yingjie Yu,Shengguang Ren,Yuyang Fu,Jiancong Li,Puyi Zhang,Yi Li,Xiangshui Miao, School of Integrated
Circuits, Huazhong University of Science and Technology, China

3:30pm W-4-7-3
Optimization of RRAM Read Performance and Area Efficiency: A Large-Scale and Low-Parasitic Array with
Novel Interconnection Schemes
Shengyu Bao,Yuhang Yang,Zongwei Wang,Linbo Shan,Qishen Wang,Yimao Cai,Ru Huang, Peking University,
China

3:45pm W-4-7-4
Improving the Reliability of 40nm RRAM Chip by Pre-cycle Operation
Ruofei Hu,Yilong Huang,Chengxiang Ma,Qianze Zheng,Kaimeng Liu,Yuelin Jiang,Siyu Chen,Jianshi Tang,Dong
Wu,Bin Gao,He Qian,Huaqiang Wu, Tsinghua University, China

4:00pm W-4-7-5
Endurance Optimization of 40nm RRAM towards 10^6 cycles by Tuning the Stoichiometry of TiN Bottom
Electrode
Chengxiang Ma,Qianze Zheng,Ruofei Hu,Yilong Huang,Kaimeng Liu,Yuelin Jiang,Siyu Chen,Jianshi Tang,Dong
Wu,Bin Gao,He Qian,Huaqiang Wu, Tsinghua University, China

4:15pm W-4-7-6
Scalable in-memory Walsh-Hadamard Transform for image compression
Jing Tian,Huai-Zhi Pei,Jian-Cong Li,Xiao-Di Huang,Yi Li,Xiang-Shui Miao,Yi-Bai Xue, Huazhong university of
Science and Technology, China

4:30pm W-4-7-7
Rapid and Extensive Conductance Modulation in MoOx based Electrochemical Random-Access Memory for
Spiking Neuromorphic Systems
xiaoci liang,Dongyue Su,Younian Tang,Bin Xi,Chunzhen Yang,Huixin Xiu,Jialiang Wang,Chuan Liu,Mengye
Wang,Yang Chai, Sun Yat-Sen University, China
4:45pm W-4-7-8
The Demonstration of Scalable-HZO/ZrO2 FeFET with Large Memory Window of 2.3V for 3bit-per-cell,
Immediate Read after Write, High Endurance of 109 cycles, and The High Accuracy of 92% for Machine
Learning.
Huang Sheng Tsang, National Central University, Taiwan

Track 7 Modeling and Simulation W-7-7

Venue: INNO2 Multifunction Hall 1, 2/F, 17W

3:00pm W-7-7-1
Characteristic Length of Transition-metal Dichalcogenides based Complementary Field-effect Transistors
Xianmao Cao,Panpan Zhang,Yiting Wu, Beijing University of Posts and Telecommunications, China

3:15pm W-7-7-2
A BSIM Compact Model of Two-Dimensional Semiconductor Field Effect Transistors
Jen-Hao Chen,Ahtisham Pampori,Chien-Ting Tung,Sayeef Salahuddin,Chenming Hu, University of California,
Berkeley, United States

3:30pm W-7-7-3
Enabling Floating Body Effect in Bulk-Si Transistor for Area and Energy-Efficient Spiking Neuron
Shubham Patil,Hemant Hajare,Abhishek Kadam,Jay Sonawane,Shreyas Deshmukh,Veeresh Deshpande,Udayan
Ganguly, IIT Bombay, India

3:45pm W-7-7-4
A 2-D Noise Model for CMOS Single Photon Avalanche Diodes
Wei Jiang,Jamal Deen,Xuanyu Qian, Hong Kong University of Science and Technology (Guangzhou), China

4:00pm W-7-7-5
Study of the Characteristics of GaN Substrate-Based MicroLEDs with Different Epitaxial Structures
Shan Huang,Yibo Liu,Feng Feng,Jingyang Zhang,Zichun Li,Man Hoi Wong,Zhaojun Liu, Hong Kong University of
Science and Technology, Hong Kong

4:15pm W-7-7-6
On-chip photon-mediated magnon-superconducting qubit system and its quantum application
Jiacheng LIU,Ferris Prima Nugraha,Qiming SHAO, Hong Kong University of Science and Technology, Hong Kong

4:30pm W-7-7-7
A physics-based compact model for electromigration failure prediction and dynamic IR-drop evaluation
Chenglin YE,Yizhan Liu,Zheng Zhou,Xiaoyan Liu, Peking University, China

4:45pm W-7-7-8
Impact of Cross-Sectional Current Crowding on Electromigration in Interconnects
Yichen Wen,Shuying Wang,Xiaoman Yang,Hai-Bao Chen,Maokun Wu,Runsheng Wang,Zhigang Ji,Ru Huang,
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University,
China
Track 8 Reliability and testing W-8-4
Venue: Conference Hall 4&5, 2/F, 8W & 10W

3:00pm W-8-4-1 [Invited]

Exploring the Potential of Hafnium Oxide-Based Ferroelectric Memories for Next-Generation Storage Class
Memories
Sourav De, National Tsing Hua University, Taiwan

3:20pm W-8-4-2 [Invited]

Impact of Dielectrics on Hysteresis and Bias Stress Stability in Oxide Semiconductor and 2D-Material Field-
Effect Transistors
Alwin Daus, University of Stuttgart, Germany

3:40pm W-8-4-3
Self-heating and Process Induced Performance Barrier on Complementary Field Effect Transistor: A Reliability
Perspective
Sandeep Kumar,Deven H Patil,Khushi Jain,Ankit Dixit,Sunil Rathore,Mohd. Shakir,Naveen Kumar,Vihar
Georgiev,Sudeb Dasgupta,Navjeet Bagga, Indian Institute of Technology Bhubaneswar, India

3:55pm W-8-4-4
Impact of Titanium Nitride (TiN) Thickness Uniformity on the Reliability of n-FinFETs: A Comparative Study of
ALD and PVD TiN Techniques
Yunfei Shi,Hong Yang,Qianqian Liu,Qingzhu Zhang,Tao Yang,Junfeng Li,Huaxiang Yin,Xiaolei Wang,Jun
Luo,Wenwu Wang,Mingyang Sun, Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese
Academy of Sciences, China

4:10pm W-8-4-5
On the Understanding of Temperature Dependence of Flicker Noise in Advanced FinFET Technology
Sheng Yang,Shuying Wang,Chenyang Zhang,Yongkang Xue,Pengpeng Ren,Zhigang Ji, Shanghai Jiao Tong
University, China

Track 9 Packaging and Heterogenous Integration W-9-3

Venue: Grand Hall A, 1/F, 12W

3:00pm W-9-3-1 [Invited]

CMOS BEOL-Compatible Three-Dimensional Heterogeneous Integration with
Emerging Devices for Advanced Information Processing Systems
Jun Luo, Institute of Microelectronics of the Chinese Academy of Sciencs, China

3:20pm W-9-3-2 [Invited]

Surface Activated Bonding for Cu/Cu Hybrid Bonding and All-Metal 3D Interconnect
Tadatomo Suga, Meisei University, Japan, Japan

3:40pm W-9-3-3 [Invited]

Heterogeneous Integration of Compound Semiconductor Materials and Devices by Ion-Cutting Technique
Xin Ou, SIMIT CAS, China

4:00pm W-9-3-4 [Invited]

Heterogeneous and monolithic 3D (HM3D) integration of III-V and CMOS for next-generation wireless
communication
Jaeyong Jeong, Korea Advanced Institute of Science and Technology, South Korea

4:20pm W-9-3-5
Thermal management and interfacial tuning of heterogeneously integrated wide-bandgap semiconductor
devices
Yan Zhou,Shi Zhou,Shun Wan, Nanjing Normal University, China

Track 10 Sensor, MEMS, Bio-electronics W-10-7

Venue: Conference Hall 6&7, 2/F, 8W & 10W

3:00pm W-10-7-1
Investigation of High-Sensitivity Pressure Sensor Integrated with InSnZnO Thin-Film Transistors
Mei YANG,Ming Li,Wei Huang,Rongsheng Chen, South China University of Technology, School of
Microelectronics, Guangdong, China, China

3:15pm W-10-7-2
Broadband Vis-NIR Neuromorphic Photodetector Based on PdSe2/Bi2O2Se Heterotransistor for Motion
Detection
Yu Zhu,Xinrui Guo,Shuo Liu,Junling Liu,Ru Huang,Ming He, Peking University, China

3:30pm W-10-7-3
Multi-channel Intelligent Electronic Nose for Rapid Identification of Complex Hazardous Gases
Wenyuan Liu,Jiachuang Wang,zhao fangyu,Nan Qin,Tiger H. Tao, SIMIT, China

3:45pm W-10-7-4
A Multi-Ion Sensing System on a Chip with Edge Computing Capability
Haolin Zhao,Zhancheng Mai,Kai Zhuang,Kai Wang, Sun Yat-sen University, China

4:00pm W-10-7-5
Fully Printed Polymer Gas Sensors Based on Machine Learning for Calibration-free Mobile Sensing
Siying Li,Sujie Chen,Qiuqi Zhang,Yuying Si,Xiaojun Gu, Shanghai Jiao Tong University, China

4:15pm W-10-7-6
Dual-Gate Thin-Film Transistor-Based Multi-Parameter Sensor for Comprehensive Water Quality Monitoring in
Aquatic Environments
Qiang Chen,Qiyi Su,Haolin Zhao,Zhancheng Mai,Kai Zhuang,Yitong Xu,Xinghui Liu,Kai Wang, Sun Yat-sen
University, China

5:00pm to 5:10pm
Coffee Break
Venue: Grand Hall B, 1/F, 12W

5:10pm to 5:30pm
Venue: Grand Hall A, 1/F, 12W
Closing Ceremony & Awards
Update: 20 Feb 2025 (subject to change)