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Semiconductor Diodes and Transistors Guide

The document covers semiconductor devices including diodes, transistors, and their applications in circuits. It explains the operation of forward and reverse-biased PN junction diodes, half-wave and full-wave rectification, as well as clippers and clampers. Additionally, it details the common-emitter configuration of bipolar junction transistors and their operational regions: active, saturation, and cutoff.

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0% found this document useful (0 votes)
8 views22 pages

Semiconductor Diodes and Transistors Guide

The document covers semiconductor devices including diodes, transistors, and their applications in circuits. It explains the operation of forward and reverse-biased PN junction diodes, half-wave and full-wave rectification, as well as clippers and clampers. Additionally, it details the common-emitter configuration of bipolar junction transistors and their operational regions: active, saturation, and cutoff.

Uploaded by

weaamaljbour
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

EE 303

Semiconductor diodes, Transistors, BJT, Thyristors and application


circuits.
Reference: Boylestad, Electronic Devices and Circuit Theory, Tenth
Edition, Pearson Education, 2000, Chapters 1-4 + Chapter 17.
Forward Biased PN Junction Diode
• A negative voltage is applied to the N-type material and a positive
voltage is applied to the P-type material.
• If this external voltage becomes greater than the value of the
potential barrier, approx. 0.7 volts for silicon and 0.3 volts for
germanium, the potential barriers opposition will be overcome and
current will start to flow.
• This is because the negative voltage pushes or repels electrons
towards the junction giving them the energy to cross over and
combine with the holes being pushed in the opposite direction
towards the junction by the positive voltage.
Reverse Biased PN Junction Diode:
• A positive voltage is applied to the N-type material and a negative
voltage is applied to the P-type material.
• The positive voltage applied to the N-type material attracts electrons
towards the positive electrode and away from the junction, while the
holes in the P-type end are also attracted away from the junction
towards the negative electrode.
• The net result is that the depletion layer grows wider due to a lack of
electrons and holes and presents a high impedance path, almost an
insulator.
Applications
• Half wave rectifier
• Average value of current,
𝜋
1 2 1 𝜋/2 𝑉𝑚
• 𝑉𝑎𝑣 = ‫𝑚𝑉 𝜋 ׬‬ 𝐶𝑜𝑠𝜔𝑡 𝑑𝜔𝑡 = 𝑉𝑚 ሿ
𝑠𝑖𝑛𝜔𝑡 −𝜋/2 = 𝐼𝑎𝑣 = 𝑉𝑎𝑣/𝑅
2𝜋 − 2𝜋 𝜋
2
• If the voltage drop across the diode (Vk) is considered the equation becomes:
𝑉𝑚−𝑉𝑘
• 𝑉𝑎𝑣 ≅
𝜋
• The peak inverse voltage (PIV) [or PRV (peak reverse voltage)] rating of the
diode is the voltage rating that must not be exceeded in the reverse-bias
region.
• For half wave rectifier: PIV=Vm
FULL-WAVE RECTIFICATION
• Bridge Network

2𝑉𝑚
𝑉𝑎𝑣 =
𝜋
If the voltage drop across the
diode (Vk) is considered:
2𝑉𝑚 − 2𝑉𝑘
𝑉𝑎𝑣 ≅
𝜋
𝑃𝐼𝑉 = 𝑉𝑚
𝐼𝑎𝑣 = 𝑉𝑎𝑣/𝑅
FULL-WAVE RECTIFICATION
• Center-Tapped Transformer

2𝑉𝑚
𝑉𝑎𝑣 =
𝜋
If the voltage drop across the
diode (Vk) is considered:
2𝑉𝑚 − 𝑉𝑘
𝑉𝑎𝑣 ≅
𝜋
𝐼𝑎𝑣 = 𝑉𝑎𝑣/𝑅 𝑃𝐼𝑉 = 2𝑉𝑚
Where Vm is taken at the secondary
side as depicted. Find Vout for 1:3
Clippers are networks that employ diodes to “clip”
away a portion of an input signal without distorting
CLIPPERS the remaining part of the applied waveform.
Clippers
• The key to determine the output voltage is to determine the applied
voltage (transition voltage) that will result in a change of state for
the diode from the “off” to the “on” state.
• Find the output voltage for when the diode is on.
• Find the output voltage for when the diode is off.
• Example:
• The diode is on when Vi <V.
• When the diode is on the output voltage = Vi – V
• When the diode is off the output voltage = 0
Open +Ve half: ON
-Ve half: Vin< V ON
Vin>V  Open
• Example:
• The diode is on when Vi >-V.
• When the diode is on the output voltage = – V Open Vo=Vin
• When the diode is off the output voltage = Vi ON: Vo=VB

ON
A clamper is a network constructed of a diode, a resistor, and
a capacitor that shifts a waveform to a different dc level
CLAMPERS without changing the appearance of the applied signal.

-Vc+

-Vi+Vc+Vo=0
Vo=Vi-Vc
Vc=V-V1
 Vo=Vi-(V+V1)
D is off & Vc=?
+-
-Vc+

Clampers
• The key to determine the magnitude of voltage of the capacitor when
“maximum charged” noting the “polarity” Vc.
• After the diode charges the capacitor, the diodeV-Vc+V1=0
will remain off.
Vc=V+V1
• Find the output voltage will be the input ± Vc. Vo=V+V+V1
• Example: Vo=V1

• The maximum voltage across the capacitor is V1+V. polarity is - +


• Vo=Vin +(V1+V)
Transistors

• The transistor is a three-layer semiconductor device consisting of


either:
• two n - and one p -type layers of material (npn transistor)
• or two p - and one n -type layers of material. (pnp transistor)

• For the shown Figure, the terminals have been indicated by the
capital letters E for emitter , C for collector , and B for base .
• The abbreviation BJT, from bipolar junction transistor , is often
applied to this three-terminal device.
COMMON-EMITTER CONFIGURATION
• The most frequently encountered transistor configuration.
• The basic operation of the transistor will now be described using the
pnp transistor. The operation of the npn transistor is exactly the same
if the roles played by the electron and hole are interchanged.
• It is called the common-emitter configuration because the emitter is
• common to both the input and output terminals
• The transistors have the ability to operate within three
different regions:
Active Region – the transistor operates as an amplifier
and Ic = β.Ib (β is the dc current gain)
Conditions: VBE=VBE(ON) ~0.7 & VCE>VCE(SAT) ~0.2

Saturation – the transistor is “Fully-ON” operating as a switch


and Ic = I(saturation)
Condition: VCE=VCE(SAT) ~0.2

Cut-off – the transistor is “Fully-OFF” operating as a switch


and Ic = 0
Condition: VBE<VBE(ON) ~0.7
General circuit and circuit analysis:
• IE = IC + IB
• IC and IE are related by a quantity called alpha and
• IC = αIE
• In the active region of a common-emitter amplifier, the base–
emitter junction is forward-biased, whereas the collector–base
junction is reverse-biased.
• Cutoff for the common-emitter configuration will be defined by :
IC=ICEO
• IC and IB are related by a quantity called beta Ic = β.IB
• For practical devices the level of b typically ranges from about 50 to
over 400, with most in the midrange.
• On specification sheets is β usually included as hFE
Analysis:

1. Assume cutoff IF VBE>0.7  Not Cut-Off


2. Assume active: Ic = β.IB
3. KVL on base loop : IB=(VBB-0.7)/RB
4. KVL on collector loop : VCE=VCC-IcRc
5. Now if VCE > 0.2  Values are correct & Active
6. But if VCE<0.2  Values are not correct. Correct values are VCE ~ 0.2 V
and Ic = (VCC-0.2)/Rc
Example: Find the point of operation for the
following transistor circuit.
EXAMPLE 4.4 For the emitter-bias network of Fig.
4.23 , determine the currents and voltages
Example
Assume cutoff  VBE=4  Not Cut-Off
Assume active: Ic = β.IB
KVL on base loop : IB=(4-0.7)/40000=82.5 μA
Ic = 82.5 μ *100 = 8.25 mA
KVL on collector loop : VCE=12- 8.25=3.75 V
Now if VCE > 0.2  Values are correct

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