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Nonideal Transistor Threshold Voltage Effects

The document discusses threshold voltage (Vt) in transistors, explaining that it is the gate-source voltage (Vgs) at which the channel begins to invert. It highlights that Vt is not constant and is influenced by factors such as body voltage, drain voltage, and channel length. The body effect is elaborated, noting that the source-bulk voltage (Vsb) impacts the charge needed for channel inversion, with equations provided to illustrate these relationships.

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Mit Shah
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2 views11 pages

Nonideal Transistor Threshold Voltage Effects

The document discusses threshold voltage (Vt) in transistors, explaining that it is the gate-source voltage (Vgs) at which the channel begins to invert. It highlights that Vt is not constant and is influenced by factors such as body voltage, drain voltage, and channel length. The body effect is elaborated, noting that the source-bulk voltage (Vsb) impacts the charge needed for channel inversion, with equations provided to illustrate these relationships.

Uploaded by

Mit Shah
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Threshold Voltage Effects

• Vt is Vgs for which the channel starts to invert


• Ideal models assumed Vt is constant
• Really depends (weakly) on almost everything else:
• Body voltage: Body Effect
• Drain voltage: Drain-Induced Barrier Lowering
• Channel length: Short Channel Effect

4: Nonideal Transistor Theory 2


Body Effect
• Body is a fourth transistor terminal
• Vsb affects the charge required to invert the channel
• Increasing Vs or decreasing Vb increases Vt
Vt  Vt 0    s  Vsb  s 
• s = surface potential at threshold
NA
s  2vT ln
ni
• Depends on doping level NA
• And intrinsic carrier concentration ni
•  = body effect coefficient
tox 2q si N A
  2q si N A 
 ox Cox

4: Nonideal Transistor Theory 3

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