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Continuity Equation for Semiconductor Carriers

The document discusses the continuity equations for charge carriers in semiconductor physics, detailing both steady-state and time-dependent scenarios. It covers case studies on uniform steady-state illumination, transient illumination, and diffusion with recombination, providing mathematical formulations for the density of minority carriers. Additionally, it highlights the impact of generation and recombination rates on carrier density variations over time and space.

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Vaibhav Semwal
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21 views6 pages

Continuity Equation for Semiconductor Carriers

The document discusses the continuity equations for charge carriers in semiconductor physics, detailing both steady-state and time-dependent scenarios. It covers case studies on uniform steady-state illumination, transient illumination, and diffusion with recombination, providing mathematical formulations for the density of minority carriers. Additionally, it highlights the impact of generation and recombination rates on carrier density variations over time and space.

Uploaded by

Vaibhav Semwal
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Continuity equation for carriers

dI p,n  A  dJ p,n  e  Gp,n  Rp,n   Adx


J p,n
  e  Gp,n  Rp,n 
x
Steady-state

Time-dependence

 J p
  e  Gp  Rp 
t x
p 1 J p
   G p  Rp 
t e x
p 1  n 1 
    J p   G p  Rp 
Continuity from
   J n   Gn  Rn  Ampere’s Law?
t e t e
Shockley Equations
Continuity Drift-Diffusion

n 1  dn
    J n   Gn  Rn  Electrons J n  ne  n  eDn
t e dx

p 1  dp
   J p   Gp  Rp  Holes J p  pe p  eD p
t e dx

Fluid-like flow  Boltzmann Transport Equation

Electrostatics:
  Gauss/Poisson
D  E
 
  D  e  p  n  N d  N a 
 
E  V Important! Recap!
Case study: uniform steady-state illumination
Gn  Gp  G

What is the density of excess minority carriers (electrons)?

n 1 J n
Continuity    Gn  Rn 
t e x
1 J n
Steady-state 0   Gn  Rn 
e x

Uniform J n  0  Gn  Rn

n
Low-level injection Rn   n  G n
n
Case study: uniform transient illumination
Gn  t   Gp  t   G   t   n  t  0  0

How does the density of minority electrons vary with time?

n 1 J n
Continuity    Gn  Rn  Rn   n  n
t e x
n   n    n   n  Jn  0 Uniform
 G     G  
t  n  t  n 
  n  G n   n  G n
 
t n
  n  G n    n  G n  t 0 et  n  G net  n  n  0  0

 n  t   G n 1  et  n

Case study: diffusion with recombination
Steady-state x=0 x=∞

 n  x  0   G n  n  x    0

How does the density of minority electrons vary along x?


n 1 J n 1 J n  n
x   0,   0   Gn  Rn   
t e x e x  n
Steady-state No generation

n  n n 2
 2  n  n n2  Dn n
J n  eDn  Dn 2    2
x x n x 2 n
Boundary
 n  x   Ae  x n
 Be  x n
A  0; B   n  0  conditions

 n  x    n  0  e x   G n e x 
n n
Without recombination?
Finis

Artwork Sources:

1. Prof. Sanjay Banerjee


2. Prof. M.A. Alam
3. [Link]
4. [Link]

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