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Semiconductor Concepts and Circuit Analysis

The document contains a series of multiple-choice questions related to semiconductor physics and electronic circuits, covering topics such as conductivity, doping, diode characteristics, transistor configurations, and logic gates. Each question presents a scenario or concept and provides four answer options. The questions assess knowledge on semiconductor behavior, current gain in transistors, and the functionality of various electronic components.

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0% found this document useful (0 votes)
5 views36 pages

Semiconductor Concepts and Circuit Analysis

The document contains a series of multiple-choice questions related to semiconductor physics and electronic circuits, covering topics such as conductivity, doping, diode characteristics, transistor configurations, and logic gates. Each question presents a scenario or concept and provides four answer options. The questions assess knowledge on semiconductor behavior, current gain in transistors, and the functionality of various electronic components.

Uploaded by

nandhunikhil1976
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Question No.

Given that the mobility


of electrons in Ge is 0.4
m2 V–1 s–1 and electronic
charge is 1 .6 × 10–19 C.
The number of donor
atoms per m3 in
semiconductor of
conductivity 500
mho/m is
21
(a) 8 × 10
(b) 8 × 1015
(c) 5 ×1021
(d) 8 × 1016
Question No. 2

Pure Si at 500K has equal


number of electron (ne)
and hole (nh)
concentrations of
1.5 × 1016 m–3. Doping by
indium increases nh to
4.5 × 1022 m–3. The doped
semi-conductor is of :
(a) n-type with electron
concentration ne =
5 × 1022 m–3
(b) p-type with electron
concentration ne =
2.5 × 1010 m–3
(c) n-type with electron
concentration ne =
2.5 × 1023 m–3
(d) p–type having electron
concentrations ne =
5 × 109 m–3
Question No. 3

Germanium is doped
with arsenic, what will
be the result?
(a) p-type semi-
conductor
(b) n-type semi-
conductor
(c) Intrinsic semi-
conductor
(d) none of these
Question No. 4

Assuming ideal diode


the current through the
1 resistance in the
circuit as shown in the
figure is

(a) 2A
(b) 1A
(c) 3A
(d) none of the above
Question No. 5

In the following, which


one of the diodes is
reverse biased?

(a) A (b) A and B


(c) A and C (d) D only
Question No. 6

The current (I) in the


circuit will be

5 5
A A
(a) 40 (b) 50
5 5
A A
(c) 10 (d) 20
Question No. 7

A p-n photodiode is
made of a material with
a band gap of 2 0 eV.
The minimum frequency
of the radiation that can
be absorbed by the
material is nearly
(a) 10 ×1014 Hz
(b) 5 ×1014 Hz
14
(c) 1 ×10 Hz
(d) 20 ×1014 Hz
Question No. 8

A p-n photodiode is
fabricated from a
semiconductor with a
band gap of 2.5 eV. It
can detect a signal of
wavelength
(a) 6000 Å
(b) 4000nm
(c) 6000 nm
(d) 4000Å
Question No. 9

A light emitting diode


(LED) has a voltage drop
of 2 V across it and a
current of 10 mA passes
when it operates with a
6 V battery through a
limiting resistor R. The
value of R is
(a) 40 k
(b) 4 k
(c) 2000 
(d) 400
Question No. 10

In a Zener diode
regulated power supply,
unregulated d.c. input of
10 V is applied. If the
resistance (Rs) connected
in series with a Zener
diode is 200  and the
Zener voltage Vz = 5 V,
the current across the
resistance Rs is
(a) 15 mA
(b) 10 mA
(c) 20 mA
(d) 25 mA
Question No. 11

The value of the


resistor, RS, needed in
the dc voltage regulator
circuit shown here,
equals

(Vi  VL )
(a) (n  1) I L
(Vi  VL )
(b) (n  1) I L
(Vi  VL )
(c) nI L
(Vi  VL )
(d) nI L
Question No. 12
Identify the semiconductor
devices whose characteristics
are given below, in the order
(a), (b), (c), (d)

(a) Zener diode, Solar cell,


Simple diode, Light
dependent resistance
(b) Simple diode, Zener diode,
Solar cell, Light dependent
resistance
(c) Zener diode, Simple diode,
Light dependent resistance,
Solar cell
(d) Solar cell, Light dependent
resistance, Zener diode,
Simple diode
Question No. 13

In a transistor, current
gain for common base
and common emitter
configurations are 
and  respectively. The
relation between  and
 is
(a)    /(1   )
(b)   1/(1   )

(c)
   /(1   )
(d)   (1   )
Question No. 14

A transistor in common
base configuration has
current gain  = 0.95. It
has a change in emitter
current of 100
milliampere. Then the
change in collector
current is
(a) 95mA
(b) l00 mA
(c) 99.05 mA
(d) 100.95 mA
Question No. 15

The current gain for a


transistor working as
common- base amplifier
is 0.96. If the emitter
current is 7.2 mA. then
the base current is
(a) 0.29 mA
(c) 0.39 mA
(b) 0.35 mA
(d) 0.43 mA
Question No. 16

Assuming the diodes are


ideal, current through
the battery is zero

(a) in (i) and (iii)


(b) in (ii) and (iii)
(c) in only (ii)
(d) in only(iii)
Question No. 17

The current gain in the


common emitter mode
of a transistor is 10. The
input impedance is 20
k and load of
resistance is 100 k.
The power gain is
(a) 300
(b) 500
(c) 200
(d) 100
Question No. 18

The transfer ratio  of a


transistor is 50. The
input resistance of the
transistor when used in
the common emitter
configuration is 1 k.
The peak value of the
collector AC current for
an AC input voltage of
0.01 V peak is :
(a) 100μA
(b) 0.01mA
(c) 0.25 mA
(d) 500 μA
Question No. 19

For a transistor
IC
 0.96
IE , then
current gain for
common emitter
configuration
(a) 12
(b) 6
(c)48
(d) 24
Question No. 20

A transistor is operated
in common emitter
configuration at constant
collector voltage VC = 1.5
V such that a change in
the base current from
100 μA to 150 μA
produces a change in the
collector current from 5
mA to 10mA. The current
gain () is
(a) 67
(b) 75
(c) 100
(d) 50
Question No. 21

The circuit gives the


output as that of

(a) AND gate


(b) OR gate
(c) NAND gate
(d) NOR gate
Question No. 22

The figure shows a logic


circuit with two inputs A
and B and the output C.
The voltage wave forms
across A, B and C are as
given. The logic circuit
gate is :

(a) OR gate
(b) NOR gate
(c) AND gate
(d) NAND gate
Question No. 23

Truth table for system


of four NAND gates as
shown in figure is

(a)

(b)

(c)

(d)
Question No. 24

Which of the following


will be the output of the
given circuit?

(1) NAND Gate


(2) XOR Gate
(3) NOR Gate
(4) AND Gate
Question No. 25

For the given circuit, the


input digital signals are
applied at the terminals A, B
and C. What would be the
output at the terminal y?

(1)
(2)
(3)
(4)
Question No. 26

In the given circuit P


and Q form the inputs.
The output Y is

(a) Y = P
(b) Y = P Q
(c) Y = P + Q
(d) Y = Q
Question No. 27

In the combination of
the following gates the
output Y can be written
in terms of inputs A and
B as

(1) A .B
(2) A . B + A . B
(3) A . B + A . B
(4) A  B
Question No. 28

The given electrical


network is equivalent
to :

(1) OR gate
(2) NOR gate
(3) NOT gate
(4) AND gate
Question No. 29

In the circuit below, A


and B represent two
inputs and C represents
the output. The circuit
represents

(1) NOR gate


(2) AND gate
(3) NAND gate
(4) OR gate
Question No. 30

The combination of the


gates shown in the
figure produces
A
Y
B

(a) NOR gate


(b) OR gate
(c) AND gate
(d) XOR gate
Question No. 31

In the circuit, the output


y becomes zero for the
inputs

(1) A = 1, B = 0, C = 0
(2) A = 0, B = 1, C = 1
(3) A = 0, B = 0, C = 0
(4) A = 1, B = 1, C = 0
Question No. 32

The figure shows a logic


gate circuit with two
inputs A and B and the
output Y. The voltage
waveforms of A, B and Y
are as given. The logic
gate is

(1) NOR gate


(2) OR gate
(3) AND gate
(4) NAND gate
Question No. 33

In a n-p-n transistor
amplifier, the collector
current is 9 mA. If 90%
of the electrons from
the emitter reach the
collector, then
(1)  = 0.9;  = 9.0
(2) the base current is
10 mA
(3) the emitter current
is 1 mA
(4)  = 9.0;  = 0.9
Question No. 34

What is the Boolean


expression for the gate
circuit shown in figure?

A
y

(1) A.0 = 0
(2) A. A = 0
(3) A.1 = A
(4) A.A = A
Question No. 35

The figure shows the


waveforms for two inputs
A and B and that for the
output Y of a logic circuit.
The logic circuit is

(1) an AND gate


(2) an OR gate
(3) a NAND gate
(4) an exclusive OR gate
Question No. 36

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