BANGABANDHU SHEIKH MUJIBUR RAHMAN
AVIATION AND AEROSPACE UNIVERSITY
Department of Avionics Engineering (AVE)
Program: Bachelor of Science in Aeronautical Engineering (Avionics)
Course Code: AVE 4302
Course Title: Electronics Circuit I Sessional
Course Credit: 1.5
Experiment no 04: Study of I-V characteristics of a Zener junction diode (Zener)
Diode.
Objectives:
To study and verify the functionality of Zener diode in forward bias and reverse bias and to
1. Plot Volt-Ampere Characteristics of Zener Diode.
2. Find Zener Breakdown Voltage in Reverse Biased conditions.
3. Calculate static and dynamic resistance of the Zener diode in both forward and
reverse biased conditions (before, after break down voltages).
Theory:
Zener diodes are a special kind of diode which permits current to flow in the forward direction.
What makes them different from other diodes is that Zener diodes will also allow current to
flow in the reverse direction when the voltage is above a certain value. This breakdown voltage
is known as the Zener voltage. In a standard diode, the Zener voltage is high, and the diode is
permanently damaged if a reverse current above that value is allowed to pass through it. Zener
diodes are designed in a way where the Zener voltage is a much lower value. There is a
controlled breakdown which does not damage the diode when a reverse current above the Zener
voltage passes through a Zener diode.
The most common values for nominal working voltage are 5.1 V, 5.6 V, 6.2 V, 12 V and 15
V. We also carry Zener diodes with nominal working voltage up to 1 kV. Forward (drive)
current can have a range from 200 uA to 200 A, with the most common forward (drive) current
being 10 mA or 200 mA.
In the forward bias direction, the Zener diode behaves like an ordinary silicon diode.
In the reverse bias direction, there is practically no reverse current flow until the breakdown
voltage is reached. When this occurs, there is a sharp increase in reverse current. Varying
amount of reverse current can pass through the diode without damaging it. The breakdown
voltage or Zener voltage (VZ) across the diode remains relatively constant. The maximum
reverse current is limited, however, by the wattage rating of the diode.
Zener Break down:
If both p-side and n-side of the diode are heavily doped, depletion region at the junction reduces
compared to the width in normal doping. Applying a reverse bias causes a strong electric field
get applied across the device. As the reverse bias is increased, the Electric field becomes strong
enough to rupture covalent bonds and generate large number of charge carriers. Such sudden
increase in the number of charge carriers due to rupture of covalent bonds under the influence
of strong electric field is termed as Zener breakdown.
List of Equipment:
• Zener Diode
• Bread Board
• Resistor
• DC voltage source
• Ammeter
• Voltmeter
• Connecting wires
Problem/Circuit Diagram:
Fig (1) - Forward Bias Condition:
Fig (2) - Reverse Bias Condition:
Working Procedure:
Procedure:
a) Forward Bias Condition:
1. Connect the circuit as shown in figure (1).
2. Initially vary Vs in steps of 0.1V. Once the current starts increasing vary Vs in
steps of 1V up to 12V. Note down the corresponding readings of Vzf and Izf.
b) Reverse Bias Condition:
1. Connect the circuit as shown in figure (2).
2. Vary Vs gradually in steps of 1V up to 12V and note down the corresponding
readings of Vzr and Izr.
3. Tabulate different reverse currents obtained for different reverse voltages.
Data Table/Graph:
Table: 1 Forward Bias Condition:
Forward Voltage across the Forward Current through the
Voltage Vs(volts) diode Vzf (volts) diode Izf (mA)
Table: 2 Reverse Bias Condition:
Reverse Voltage across the Reverse Current through the
Voltage Vs(volts) diode Vzr (volts) diode Izr (mA)
Expected Graph:
Text Book:
1. Electronic Devices and Circuit
David A Bell
2. Principles of
ElectronicsV K Mehta