)

CHENNAI
INSTITUTE SF
CHENNAI
TECHNOLOGY INSTITUTE(Autonomous)
OF TECHNOLOGY
HAND RTTEN NOTES
PH5101 PHYSICS FOR COMPUTING TECHNOLOGIES LTPC
3 00 3
COURSE OBJECTIVES:
" Tomake the students understand the importance in studying electronic properties of
materials.
" Toenable the students to gain knowledge in semiconductor devices.
"To instil knowledge on magnetic properties of materials and modern storage devices.
" To understand the fundamental principles of lascr operation
" To inculcate an idca of significance of nanostructures, quantum confinement and quantum
computing.
UNIT II SEMICONDUCTOR PHYSICS 9
Semiconductors - Classification (direct and indirect) - Energy band diagram - Intrinsic
Semiconductors Carrier concentration in intrinsic semiconductors extrinsic
semiconductors Carrier concentration in N-type semiconductors - P-type semiconductors
(qualitative) Applications: Hall effect and devices -FinFETs.
At the end of the course, the students should be able to

CO»S OUTCOMES RBT

103.1 Gain knowledge on classical and quantum electron theories, and energy band
structures KI

103.2 Acquire knowledge on basics of semiconductor Physics and its appications in

various devices Ki
103.3 Get knowledge on magnetic properties of materials and their applications in
data storage, KI
103.4 Have the necessary understanding on LASER and its applications. K2
103.5
Understand the basics of quantum structures and their applications and basics
of quantum computing K2

CO-PO MAPPING
Course
Outcome PO1 PO2 PO3| PO4 | PO5 PO6 PO7 PO8|PO9PO10| PO11 PO12
(CO)
CO1 3 3
Co23 2
CO3 2

CO4 2 2
COs 3 3
AVG 2.4

Presented by Verified by Prngtha

(pr [Link]
)

PHS101-Physics for Computing Technologies Unit-I[-Semiconductor Physics

Caryíer Conlentoa ton- îngtoinsc
Senicond uttbr
The noo} chasge cavi s
Per unft volue od the mateal
ig called caie Contentoaion.
alco knbon as density od
Chooge Caoie, tnass D ElottDn,
n-s4ect've
Deaivalion
Dt
the nbD etottoons n he
Fc-ower ConducHon Ene94
Cond uetfon band Cn and holes
level.
the Vaton e band p is
other at T ok Egn Can be toritten
4ual to each
n=P=ni (2m)
1+e
The densfty ot electorns în
>ok
the Conductfon band coo fo given We know that, nt

by
Z(E) FCE)dE D )
E-Eç
kroio that, Density ot
Btates
(2m)Ede Hente can 5 can be toiHen s
( 2 m ) 2

DCupatien

(E-Erh)
1
n (2m,)h
J
L
CHENNAIC
INSTITUTE OF
DEPARTMENT OF
SCIENCE AND HUMANITIEs
'AulGnongn
PUS1O1-Physics lor Computing Technologies Unit--Semiconductor Physics
dpz()x(i-F(E)dE
F(E)- Prro babiy os e occup aton
-FIE)- Por balit od e unotcupied,
|- F(E) =I (8-EF)/T
wlhen e(E-EF/ T

S)na
tompard to Ef
olE d Eis Vey mal)
Mgatire quanity
in vB. CE- E) is
Fqn6 Can be ogiten ax
ot
-(Eet)
!.Desin VB (pensity t gat
Ep-Ecas (2mi
h3
n (2mt
kinete enggg
Henle, (Ey- E) is.
le vel bblo Ev,
Using garnma funtion
as(v-E)
£ in e4n ( )fs seplated
( KT)
(ans)"(Ev-E)s

Hente Sub ond (13 in oe qet

n
4 2 2
h3

(Ep-f)
(2m)"(6-eee

density og eloctroons in a
e

Condu tibn band.

P=
VE ot inesn E
Density cf holos in cfor Let, fnbgoalwlhen Alhen
jntoins)e Bomitbdu Ey-£ x

E Ey
hole ic caeatic in Ve
VB to CB, a dE=-d
X
lets, dp
Volume 1n vB blw and EtdE.
2 CHENNAI
ECHNOLOCr
DEPARTMENT OF
SCIENCE AND HUMANITIES
 2
PHS101-Physics for Computing Technologies Unit-l[-Semiconductor Physics
Using gamnA function
Ex4oinic Semi condutfor
n)
2 |pe}inítirm
Impure Bomi Condu Cto s are
sub eon ( in (5), the one in omeh Chaoge careTs
genevntd by ctding fnpure atond
(Ey-Er)
(pn)
tb the pure 9emitorduttors.
, (ev-Er/e
p:2 L)
hese are classitied i
nto to0
types based on the type o
b4 hoas n VB bt impueity
ConCentoation
fntnsic semitondu cto (Þ) n-type (pentaVAlLnt)
ExaessiCn too fotoinsic () P -ty Toivaunt)

Cenlantoaffon. Caooie Conteroaion în n tpe

fntinse ernicondueo
As woe khooin

t any tenpotu En agg band Atagram

Semitonducto
ghon below
abore TY ok.
Conducffan band tree
e l e c f

ni n;

nand p
n;= nxp yalona band
2 ele ctaon
tevel
fs Coull ed
CEd), s Ss ocatec bove
band.
ote2anae lroo on both
AT KT
in tonductien band.
Voume
"k
(Ep -fe)

Carrjer Coro ntoati on ot intajnsic CHENNA

IISTITLUTE
DEPARTMENT OF
SCIENCE AND HUMANITIES
8ormtonductos. rECHNOLOG?
PHSTO1-Phy sics for Computing Technologies Unit-II-Semiconductor Physics
mee44oc+ ire mass Fquating Oand oe qet,
Constant
k - Bo lmann

F(E) - PoD babilty 64 Electn

dono onogs bvel Nd,(ed- )/
I-Fed) Probabil'ty ionized drond LE)
NÀ - btal no ed dono atoms
Pe? unÉt voue. No

(Ed -E) KT

N
(
Nd
(E4E)/ e 2

Nd+e Tatirg tog onbn both sides,

N

td-¬B/eT h2

CEd-)/r

1he abbye en Cun be o1 Hen h2

don
th densi ty ot ionisud
(ed-E+)/KT N
nh a Nd e 2
b2

band L)
etetn in the orducton
Donby Sub ean ( ) în
Dunsity ot holes ín the
eneogy teel. (ng) n

CHEN NAI DEPARTMENT OF

4 TECHNOLCGY SCIENCE AND HUMANITIES
utgnses;
PHS101-Physics for Computing Technologies Unit-11-Semiconductor Physics

De 2
2 K$
Gn i P- type gemicondu cfor
A S mal) nount od trivalent
impuotty in dope to a pu ne
8emitonduttor. The eneg4 lovel diagm
2k1
noot holes
Hene the large
tovel.
tron a new
telbo he
Ed-Ec àtUeptor level fisst
V2 [2nmk Condu ctfon band.

Recovangig eqn Condutíon hand

Atceptor Enngy lavel

Valuna band

Nà Prample: Toi valent împuity

aceeptoy

opuoities, beau, holes

leeat
Con acept e
he expre cion or having valente eleetoron
En (D is ble eletonge.
ConentoaHon o n- type B having g valene
Cooier
ele Ctoon
lomitorduetor
then 3 vale ne fovm a Covalnt
and +â[Link]
temperatue o
Fosr lovel oitt bon olth three valen
impuaty bontontaatfon tn-typ)
electon Dt bye
n-type embndultor ís iven by Th'do yah Valens
NA is ùn ble to tonm
a lovalent
loge eectoon fs
KT
Jond. The missing
cotled hole
This type ot gommtonductoY
Tz0k,
majoity charge Csaiey
a
hole aAA

Curier,

CHENN DEPARTMENT OF
SCIENCE AND HUMANITIES
PHS101-Physics for Computing Technologies Unit-I[-Semiconductor Physics
The allo habll hevg4 eel Hatl eftect in cemicond uctor
a-Ty0e y
Somitómdue
aba valne band. toy
cUrTont faco
&mall oounf o eheg9 Hall volkog
ecded ox cn Magu
enter ACepBo energy. level fiald

0m VB. Conside nty Serrdutor

ie geneoaad in the fn the doum
dom ot rectanguiao
Vlone band
band cooresponding slab. Cursent () ly w Tn
fonisd aceepbog. disection magnatic feld (E) i
to uto
applied fn Z- disection,
casoterS
ae Caeated. hall ettet voltage devolpe
charge tia). cusoet
albng v - disection (in
Hall ett ect flo de to etectn fbLO.
alhen a Conductov cnroying Eectons moving veit volaeit
V, expeTiene downwod ore.
CUyent CT) js plated
fooperdiular to a magntic Fore duw to magrahe Y= Bev-o
fiotd (poon oard)
tield (B) a potirtial i4ferente
Pondued'. fnsiclu the bo ndutt
Tn a cirection pexpendiclar
Forte due to
poantial,
lif}erente
to cuyrent and magnatic fielel. Fae -2
phenomenon s
Ths nown
tHal efet and generated Bev = eEH

otuge called tl voltage. () Fele-]

Hal etet io usvd to
Curent doncity cllong x dleectio
dlistinguish blo toD typex oj iS 8eload to V as
Oarge care?s leand hola). (
olage

Cunient
Maqut
Conducto
Sub eyn in

ne
CHENNAI DEPARTMENT OF
INSTTUIE
SCIENCE AND HUNIANITIES
PUS1O1-Phy sics for Computing lehnologies Unit-|[-Scmiconductor Physics

elkene Ry ne
utb egr(D in fo)
RH :

ccs
Ru 8 onstant known
hall toetiuent, TheTha ~ Ve sign Vy b
Hatl coefticient Ry =
in -ve
indicata thc Electamc dicld, în
EXpesimeta) Deis minatí¡n ot
Hal to efiuent
P type Seni tondu tBor Semicondu efo cab ot
A
Cua7nt tpw due to tbw ot
+hockrass and beacb(b) is
holes (tve charge). Compas toith tacen and cusoent ie paseed
n-type Semico nductoY gent
theough x- axis sing batey
censty Rectangular slab
Csemicondettor)

Pe Cureht

Sub in e
EH R#T, B
MA
Ry = L / P - conentaahin
Thelab is plala blo
Pe
poles ed an ele ctopmagne tic . magnefi
Hall coedtiient integms ot tal
4feld is appleed aulo ng
|voloae The tt) Voltage (vH) is meas ured
Hall voltage V Eyt -D by Placing too porobex atte
bottbm 0t
EH ~Hal fiel4. lente Dt the top and
+ he slab.
Sub egn() in al Vo Hage,
By measinf
VH = RH Ja Bt is de Bjmina
Coodticient
the tomula

R» VH b

A
Ja Tx

CHENNAI DEPARTMENT OF
SCIENCE AND HUMANITIES
fECIHNOLOG
PHS101-Physics for Conmputing Technologies Unit-l|-Semiconductor Physics

om abone Hatl boettient, Carer (o) used to Jind the tojer

Contondnatfon and nobilfty Lonentation,
be detemíned.
h1
eRH
moLiity o choage (avies.
CoeHiient
(ii) used to tird the mobity
kle bno tat, Hall charge coarviers.
ne

abow express iDn is vaild Hall Bevius

the where the
londutors, The deñi e ledhieh ues the hal
enly foN
+aben
valetity Hall devile.
tnoon cs
elo citt
hetyne gerni tordu cfog
Three typesi
Fo CiT Gauss nuetey
RH 2(8 ( sletronic muliplier
he

G tauss metA
Ry
Ry By Ta
For p-type semito nduetor Hall voltage t t
Pe r18
givon ttall
element, Ry oud t Constant.
Semionduetoy Cusrent I though -Ball element
For n p
is lonstant.

-
-l·16

for Ptype eemi tpnductog.

RH l18
Appllcatin

tpe, o hethey +he mamal i e p the Principle wsed in Gauss

6r n-tye semicondu ttoo. teter tow measit ng nagnetc fiel4
CHENNAI DEPARTMENT OF
tCHNOLO SCIENCE AND HUMANITIES
PIHS101-Physics for Computing Technologies Unit-I|-Scmiconductor Physics
Fin Fiel Effect Toancistor
FinPET kn ouon as Fin eield
Toansistor, descibes a hon plan,
Ru and t Constant duublk qat tscncictoz bot
en an soT substae, bafod
the cingu qat traneistoy
magneíe ietd Bz is forponto
tb current (I;) thoough thu toil.
design.
These dleui as hane beena1 van
Bz a T2
thi genie Dame Fín PET',
belause the SDuae ldoain reqion,
The poincipu ecd in analot fooms ins
elattronic multiples. Hpraun
ate
Sousa Daair
Sourte

telo type of toansistor

lwcut ete
)Electeonic ohich usus a tin ke stchue
19 used to
Elall eftect instead ot wsinqa tonentioral
hAeesu0 the etectai cat poeo Hlat design Jaster and mone
dissipatad in a Coade compati cistuit and complter
chips.
eiveit. wsing
Fin FET oas dveloped by
the Power in a
chehming Hu and using on sicon
ple
ni ple
the Poini ot Hall ettet on-fosulatort SOI),
lpattmeta.
Called ttall etfef- with thick pxlde on top
Ot fin knoon as bouble gate'
On d thn bXich on top as uell
cs on sides are cclled Tiple
ate.
CHENNAI DEPARTMENT OF
SCIENCE AND HUMANITIES
TECHINOLCO
PIS1O1-Physics for ComputingTechnologies Unit-II-Semiconductor Physics

Fin PET cre that the Conclucfing

Conetuci g Constautfion and tooseing of
Channel is lonpped by a thin FinFET
si' in, wlhich don he body
pinFE1 isfs a Ughtly n
THiceness o the fin dttemNs p- doped cubstocte
the effectie channel tangth ot ith a haocd mask
deuia, basis do modorn bn top leg sillcon.
nitice) aus a patHereno ti
nanoveorohic emicondu lfor
dauica fabricaltion. esist ayes
Fins ae made om indiud) Fin etch
qaium O8se nide , is (onduehion Ains are foored in a
Aatt fs fine times greater han anisotopie eteh prness, thre

he conen tionm siuten toansist is no stop ayer

CMDs FETSs). aje as i is in soT, the
there etch prous has to
Similar with FET, hmis be tine based
a souste and clsain contact Dxide aposition
and gate to Coniol the Curent I solate the tins frdm each
Jlbw. other, a oxide depositn uoit,
The channel blw souT e gh aspect aabo. filing behaviour
ound dsi n is built as Q is needed.
bas oh top bt the silico planaizatfon
Substaate called tin. oxide is plananizad sy
The gate electodo is chemica! machanica polishing
then The hasd magk at as a stop
twgapped arvund the
Channel So that the ne
layor.
|6 Roess etch.
be foomed Senerl gate Eteh paoePS in ne eded to
electhodes Cn Qach side reee ss fhe bide fim oforn
ohich oas to edueed la ateral fsolaion ot the fins.
leakaqe ttoet and enhanad b) Gat oxide.
dine urent on top Dt the tios the
gale oxíde is depositad by
CHENNA DEPARTMENT OF
reCHNOLOGr SCIENCE AND HUMANITIES
PIHS101-Physics for Computing Technologies Unit-II-Semiconductor Physics
themal eXidaion to îsolat the Thin si fin, which seves as
Channel trom the gad eeetmde a bod y ot mosFET, doped poly
a igh -dose anged implant at s ilm wsap ao und the fin
Hhe base ot thn fin (neates a nale A eecncal Con tatt to
dopant junction and tompletey he Vesticad fales ot the tin.
Îsolation Etched through th poly s im
G) beposifon ot the gate. to Sepavati the soure and dooaun,
4highly h-doped poly siltor Fin FET i4 shnilaT to that o
layer fe deposiket a Conentíoral MsFED, hae
ins, three gate orappad
too modes too botb P Mnd n
Cvund he channele
channele one dh
chonnel. MoSFETS. enhanument
each side ot the fin, and cepe nd
node and de pletibn made.
bh the icknes5 the gate
Channel shoos maXimu
on top a thio gate
londulance ahen theoe 1s no
abone
gatecan Voltage
the intluen e ot top ato on he gate teotiha
also he inhibited by the degosttnVottage change to pesitie
Nagative , and Conductivity ot
ot a mtoide layes.
channel Aeduces.
Thene îs an oxide layeo
£n han ement pCle B MoSFES
n sDT
klhen thene Is no vottage
in sim pli fied c2s the poess t does hDt CordaÂ
qate tetnina,
Can be Stopped Dh oxide easily
Fnhanemeht mocle, deviu
Conduct be tes then there s
VDS VDs rnpre votage on the Gate tertmira
Benefits of FìnfET:
Nthannu. p- channef * BetteT þuotoTma nle an4
reduect power cohsumpin
p-FinFe n-FinFeL
u

(wn Co mpora to plaes toansistos.

aseno u
go shot channel ettects
haed than plana po.
CHENNAJ DEPARTMENT OF
1 T9CHNOLOGY SCIENCE AND HUMANITIES
PHS101-Physics for Computing Technologies Unit-I[-Semiconductor Physics

¢Beter in dtving curnent

imitationg
* Dh a bullk-cion poo,
Oveo fìn clopth s
mone ditiult

+ Highe Souoe qnd don

hesictantes,

Aca tions.
possibiCH to san power
avises Dhen both gat Can
he
be tontolled se parntely.
uced to tontol the thoesho
Voltage oj devia, fast switehing
and tyeduad lea kage luogenf.
sed to design sirepüied
Logic gates, educo power ond
Sane chhp anea, taclins to Snaly
mpne Cost ettiuent designs.
lortd leader n Smart
Samsung Eucaonic,
has incosporsated inpET in ty hm.
Dopessors San s ung smart Phay
Samsung galaxy sb, Apple Tnta.,
and TsMC. ae Sut to Ship the
lHnm techndoqy by s016.

EPARTMENT OF
rECHNOLCG" SCIENCE AND HUMANITIES