Negative Differential

Resistance
Prepared By,
Kasro Miah (2022397043)
Project Motivation:

• S – Shape Negative Differential Resistor

𝑉 ↓ 𝐼 ↑ 𝑅 ↓ ⇒ 𝑆𝑙𝑜𝑝𝑒 𝑖𝑠 − 𝑣𝑒

Don’t follow Ohm’s Law

Non-Linear
resembles the letter “S”

Source: Circuit Idea/Negative Differential Resistance, wikibooks

• N – Shape Negative Differential Resistor

⇒ 𝑆𝑙𝑜𝑝𝑒 𝑖𝑠 − 𝑣𝑒

Don’t follow Ohm’s Law

Non-Linear
resembles the letter “N”
Source: Circuit Idea/Negative Differential Resistance, wikibooks
 Negative Differential Resistance Theory:

Source: Circuit Idea/Negative Differential Resistance, wikibooks

• The behavior of circuits with negative differential
resistance leading to a nonmonotonic curve

• Negative slopes indicating negative differential

resistance.

• Circuit stability is determined by the poles of the

circuit's impedance equation, where a condition for
stability is that the total resistance is positive.

Source: Negative resistance oscillator circuit CCNR

 Applications of NDR:

• Logic circuit design and semiconductor

technology.

• Emerging memory applications (RRAM and SRAM).

Reference: R. Yao et al., “A High-Reliability 12T SRAM Radiation-Hardened Cell for

Aerospace Applications,” Micromachines (Basel), vol. 14, no. 7, Jul. 2023, doi:
10.3390/mi14071305.

Reference: B. Keeth and R. J. Baker, DRAM circuit design : a tutorial. IEEE, 2001. Reference: Zahoor, F., Azni Zulkifli, T.Z. & Khanday, F.A. Resistive Random Access Memory
(RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc)
Storage, Modeling, and Applications. Nanoscale Res Lett 15, 90 (2020).
 S-Type Related Device : Thyristor Anode

P
• Basic structure of a thyristor N
N
Gate P
N

Cathode

• Thyristor Circuit Symbol:

• Thyristor has three mode: Source: SCR Thyristor Structure & Fabrication

(i) Forward Blocking Mode.

(ii) Forward Conduction Mode.
(iii) Reverse Blocking Mode.
S-Type Related Device : Thyristor P
F.B J1 +
N
• Forward Blocking Mode: R.B J2
High Voltage, Low Current P -
Off State
F.B J3
N

P
F.B J1 +
N
• Forward Conduction Mode: F.B J2
Low Voltage, High Current P -
+ F.B J3
ON State
N
-

P
R.B J1 -
N
• Reverse Blocking Mode: F.B J2
P +
R.B J3
N
 S-Type Related Device : Thyristor

• I-V Characteristics of Thyristor:

Off State : High Voltage, Low Current, High Resistance

ON State : Low Voltage, High Current, Low Resistance

• Gate current triggers the thyristor from Off state to

ON state is called latching.

• Positive voltage is applied between the anode and Reference: Characteristics of Thyristors
cathode, the thyristor remains in off state until a small
current (0.5mA) is applied to the gate terminal.
S-Type Related Device : Thyristor

Anode
R1 . 0.0025
Thyristor I-V Curve
0.0020
570 Ω PNP 0.0015

Vs PWL(0 0 1m 20)

I (mA)
0.0010
+
- Gate
. 0.0005

R2 0.0000

NPN -0.0005
V1
+ 470 Ω -0.0010
2v - 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85
V (V)
Cathode
.

.tran 0.1m
 S-Type Related Works:

• To exhibit multiple solutions current-controlled

(type-S) voltage-current characteristics.

• Emphasizes the importance of feedback structures in

generating NDR devices.

• Use of SPICE simulations to validate circuit designs.

An S-shaped NDR device made with two complementary
MOSFET transistors and two resistors (R1=200 kΩ, R2=5 kΩ,
Vt01= -5 V, V t02= +1 V).

Reference: L. 0 Chua, J. Yu, and Y. Yu, “Bipolar-JFET-MOSFET

Negative Resistance Devices,” 1985.
S-Type Related Works:

R1
200K Ω 0.8
I-V Curve
NMOS 0.7
+ 0.6
-
0.5
PWL(0 0 1m 20) PMOS

I (uA)
0.4
0.3

R2 0.2
2v
5K Ω 0.1
0.0
-0.1
0.0 0.5 1.0 1.5 2.0
V (V)
.tran 0.1m
.model PMOS pmos(vt0=-5)
.model NMOS nmos(vt0=1)
 N-Type Related Works:

• To exhibit multiple solutions voltage-controlled

(type-N) voltage-current characteristics.

• Use of SPICE simulations to validate circuit designs.

Reference: Kwang-Jow Gan. Cher-Shiung Tsai. Dong-Shong Liang ‘’ Design and characterization of
the negative differential resistance circuits using the CMOS and BiCMOS process’’ 2010
 N-Type Related Works:

+ Vs 4.00E+013
- I-V Curve
PWL(0 0 1m 20) 3.50E+013
3.00E+013
2.50E+013

I (A)
2.00E+013
1.50E+013

Vgg 1.00E+013

.step param V 0.7 2.5 0.2

5.00E+012
+
2.1 - VG 0.00E+000
+ -5.00E+012
- 0 5 10 15 20
{V} V (V)
2v

.tran 0.1m