EE221 Electronic Devices

Tutorial-6

Q1. Which part of the diode non-ideal IV-characteristics is used for optical to electrical
and Electrical to optical conversion? Explain.
Q2. Photodetector:
A) Derive the relation for photoconduction gain.
B) Calculate the photoconductor gain of a silicon photoconductor. Consider an n-type
silicon photoconductor with a length L =100 μm, cross-sectional area A =10−7 c m2,
and minority carrier lifetime τ p=1 μs . Let the applied voltage be V =10 V. Electron
2 2
cm cm
and hole mobilities are 1350 and 480 .
V −sec V −sec
Q3. LED:
A) Which semiconductor (direct or indirect bandgap) is suited for photon generation?
Explain.
B) If you want to make an LED with visible light, what kind of semiconductor’s will
you choose? Explain and give some examples of semiconductors for visible light.
C) We see that we have white LEDs at our homes, what can you do to get these
white LEDs?
Q4. A Si solar cell has a short-circuit current of 150 mA and an open-circuit voltage of
0.85 V under full solar illumination. The fill factor is 0.6. What is the maximum power
delivered to a load by this cell?
Q5. MS Junction
A) Qualitatively hand-sketch log(I) vs. V for a Schottky diode and a PN diode in the
same figure. Comment on the similarity and difference. Comment on the physical
mechanism on the majority/minority carrier flow.
B) Describe different ways to avoid Schottky contact
[Link] the energy band diagram of Ohmic and rectifying contact for both P and N type
semiconductor used in MS contact?

Q7. An ideal rectifying contact is formed by depositing gold on an N-type silicon

substrate with a doping of 1 015cm-3 maintained at room temperature .
A) Find Schottky Barrier Height
B) Find Built-in Potential
C) Determine Bulk Potential
NOTE : Metal (Gold) work function is 5.10 eV and Silicon electron affinity is 4.05 eV

Q8. The figure shows the I-V characteristics of the solar cell illuminated with solar light
of Power 100 mw/cm2 . The solar cell area is 3 cm 2 and the Fill factor is 0.7 . Find the
efficiency of the device in terms of percentage ________.

Q9. The particular intensity of incident light on a silicon PN Junction solar cell the
photocurrent density is 2.5 m A/cm2 and the Open-circuit voltage of the solar cell is 0.451
V . Consider a thermal voltage of 25 mV . If the intensity of incident light increases by 20
times but assuming that the temperature remains unchanged . Find Open-circuit voltage
_______.

Q10. Consider a Schottky diode with a doping profile shown in the figure below.
Assuming that the Built-in Potential Vbi is 0.8 V .

A) Sketch the 1/c 2 vs V ( Reverse Bias Voltage) . Do not find numerical values for
the C .
B) Sketch the electric field profile for bias condition when Wdep = 2μm . Do not find
numerical values for the electric field .
Q11. A metal/N-type semiconductors Schottky diode has the C- V characteristics given
in the figure .

A) Find the Built-in Potential of the diode from Region 1

B) Sketch the doping profile for N-type semiconductors

Q12. What are the different regions of BJT operation and what are their uses?

[Link] the region of operation of transistors shown in Figures below

[Link] a pnp BJT with doping levels of the emitter, base and collector such that N E>
NB> NC, show the dominant current components, with proper arrows, for directions in the
normal active mode. If IEp = 10 mA, IEn = 100 uA, ICp = 9.8 mA, and ICn = 1 uA, calculate
the base transport factor, emitter injection efficiency, common-base current gain,
common-emitter current gain. If the minority stored base charge is 4.9 x 10 -11 C, calculate
the base transit time and lifetime.

[Link] is the Early effect of the BJT? Is it beneficial, if yes explain, or if not, how to
mitigate this without affecting the device operation much?

[Link] make an efficient amplifier, the Base has to be optimized to increase the gain.
Describe what should be done (increase/decrease) with the emitter doping, base doping
and base width? Also justify mathematically.
Q17. What is linear amplification? explain in detail. Which characteristics are considered
for linear amplification?
Q18. In the circuit below RC=1.2kΩ, RB= 86kΩ, VBE=0.6V, and VCE(sat)=0.2V.
A) Calculate the collector current Ic when the V i=2 V .
B) If V i ≫V BE∧V i≪V BE does this transistor work as a switch with V O as output ?
C) Calculate the minimum value of the transistor common emitter current gain , β to
ensure that the transistor is operated in the saturation region . Assume that the
input voltageV i= 5V
Q19. Draw the Band-diagram,Potential, E-field and charge density profile for N +¿ ¿ P−¿ N ¿
Transistor structure .
A) Under Equilibrium
B) BE junction in FB, CB junction in FB
C) BE junction in RB and CB junction in RB
D) BE Junction in FB and CB junction in RB
E) BE junction in RB and CB junction in FB
Q20. Consider a NPN Transistor with W E=0.5 μm ,W B =0.2 μm ,W C =2 μm∧¿
2
DB =10 c m / sec .

A) Find the peak β F ¿ above figure .

B) Estimate the Base Doping Concentration(N B)
C) Find the V BE at which peak minority carrier concentration in the base is about to
N Bis 1 017 c m−3
D) Find the Base Transit Time
Q21. Design Logic gates (NAND, NOR etc) using BJT .

Q22, Q23, Q24 basics will be covered in next lecture.

[Link] the energy band diagram of MOS Capacitor with P- type semiconductor in
flat-band, accumulation and depletion bias condition? From the energy band diagram
how do you identify the type of semiconductor?
Q23. For the MOSCAP with n-substrate:
a. Plot the C-V characteristics of the HFCV, LFCV and Deep Depletion CV, Explain
the behavior
 b. What does threshold voltage mean? Derive the relation for threshold voltage
(Vth).
i. How does substrate doping affect the Vth
ii. How does work-function of the metal affect Vth
iii. Approximately draw the MOSCAP LFCV characteristics for increase in
doping and increase in work-function.

Q24. If a random MOSCAP/MOSFET is given to you. Can you go into the lab and
describe a method to find out: (Hint: CV measurement)
a. Oxide thickness
b. Type (p type or n-type) MOSFET and doping of the semiconductor
c. The threshold voltage of the MOSCAP (Assume no flat band voltage)