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PN Junction Diode Analysis and Mechanisms

The document contains a series of questions related to the behavior and characteristics of PN junction diodes, including current conduction mechanisms, minority carrier profiles, built-in voltage calculations, and breakdown mechanisms. It also discusses diode logic gates, the impact of different semiconductor materials on diode performance, and the effects of light on semiconductor doping. The questions require detailed explanations, diagrams, and calculations related to diode operation in various conditions.

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Sandip Lashkare
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7 views3 pages

PN Junction Diode Analysis and Mechanisms

The document contains a series of questions related to the behavior and characteristics of PN junction diodes, including current conduction mechanisms, minority carrier profiles, built-in voltage calculations, and breakdown mechanisms. It also discusses diode logic gates, the impact of different semiconductor materials on diode performance, and the effects of light on semiconductor doping. The questions require detailed explanations, diagrams, and calculations related to diode operation in various conditions.

Uploaded by

Sandip Lashkare
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd

Q1. Diode’s ideal and non-ideal behaviour is shown below.

Describe briefly (1-2 lines) the


physical mechanism for current conduction in different regions.

Q2. In a PN junction diode, what is a difference between diffusion and recombination


current? Draw and describe the regions where diffusion and recombination occurs?

Q3. In a PN junction, draw minority carrier profile during


a. Low level injection (V A < V bi ¿
b. High level injection (V A → V bi ¿
c. Reverse bias
Q4. For a Silicon PN junction Nd=1018 /cm3 , Na=1016/cm3 .
a. What is the built-in voltage?
b. How much series resistance will be offered by a PN junction if P and N regions are 1
µm long and have 100 µm2 area?
c. How much current flows through the diode in forward of 2V.
a. Draw the band diagram when 2V is applied.
b. Plot potential, E-field and charge density profile.
c. Confirm the same using software used in Lecture 10 part 2
Q5. Describe the electron flow in the PN junction and show the complete path from battery
positive terminal to negative terminal for:
a. Forward bias
b. Reverse Bias
Q6. What is a subthreshold slope (SS)? Find the SS slope for
a. Diffusion current
b. Recombination current – Does Recombination current slow or make the current
transition faster compared to diffusion current?
c. Describe SS dependence on temperature
Q7. Describe Breakdown Mechanism in PN junction diode using band diagrams
a. Avalanche breakdown. How can we increase Avalanche breakdown voltage?
b. Zener breakdown. How can we decrease Zener breakdown voltage?
a. On which parameters does Tunneling probability depend on?
b. Does Avalanche breakdown occur in Zener diodes?
c. Are both these breakdown mechanisms reversible? Explain.
d. If a diode is given to you randomly, can you go into the lab and find out if it is Zener
diode or Avalanche diode?
e. If the material band gap is increased, how does the Avalanche and Zener Breakdown
voltage change?
Q8. How does diode IV change if the PN junction semiconductor is changed from
Germanium to Silicon to GaAs? Explain the impact on Saturation current ( I 0 ¿ , Built-in
voltage (V bi ¿, Breakdown voltage (V br )
Q9. How can you get AND, OR logic gate using diodes and resistors?
Q10. Describe tunnel (Esaki) diode operation in forward and reverse bias? Why do you get
negative resistance and what does it signify?
Q11. A semi-infinite silicon bar is uniformly doping with Nd=1015 /cm3and illuminated with
light at the x = 0 end, generating excess minority carriers ᐃpn (x = 0 ) with a value of 1010
/cm3 .The wavelength of the light is such that no light penetrates the bar's interior ( x > 0 ).
Determine the ᐃpn (x).

Q12. A semi-infinite p-type bar is illuminated with light which generates GL electron-hole
pairs per cm3-sec uniformly throughout the volume of the semiconductor . Simultaneously ,
carriers are extracted at x = 0 making ᐃnp = 0 at x = 0 . Assuming a steady state condition
has been established and ᐃnp(x) << po for all x , determine ᐃnp (x) .

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