EE221 Electronic Devices
Tutorial-3
Q1 The resistance (R) of a rectangular intrinsic semiconductor bar of dimensions L (1m),
W (0.5m) and H (0.5m) is measured at different temperatures. The R is 10KΩ at 400K
and 20KΩ at 300K. If intrinsic electron and hole mobilities of the semiconductor bar are
same and the mobilities are independent of temperature, then calculate the bandgap of the
semiconductor.
Q2 What is Velocity saturation? Plot Velocity saturation vs Electric field graph? What is
the reason for Velocity Saturation?
Q3 (a) A Si bar 1 µm long and 100 µm2 in cross-sectional area is doped with 1017 cm-3
phosphorus. Find the current at 300 K with 10 V applied. Given saturation velocity of
electron = 107 cm/s.
(b) How long does it take an average electron to drift 1 µm in pure Si at an electric field
of 100 V/cm? Given mobility of electron = 1350 cm2/V s
(c ) How about the hole current given that the saturation velocity of holes is 0.5 times of
electron? Does hole current matter even with velocity saturation for holes?
Q4. A 2 cm long piece of silicon with cross-sectional area of 0.1 cm 2 is doped with
donors at 1015 cm-3 is maintained at T=300K and has a resistance of 90 Ω . The saturation
velocity of electrons in the silicon is 10 7 cm/sec for fields above 105 V/cm . Calculate the
electron drift velocity , if we apply a voltage of 100 V across the piece . What is the
current through the piece if the applied voltage of 106 V across it.
Q5. The dependence of drift velocity of electrons on an electric field in a semiconductor
is shown below. The semiconductor has a uniform electron concentration of 10 16 cm-3 and
the charge of electron q = 1.6 10-19 C. If a bias of 5 volts is applied across a 1 µm region
and cross-sectional area 0.01 µm2 of this semiconductor. Determine the current flowing
through the semiconductor?
Q6. The electron concentration in a sample of uniformly doped n-type silicon at 300K
varies linearly from 1017 cm-3 at x=0 to 6 x 1016 cm-3 at x= 2 µm. If the charge of electrons
is 1.6x10-19 C and the diffusion coefficient of electrons is 35 cm 2/sec . Find the current
density of silicon, if no electric field is present in the silicon.
Q 7 a) A material has a direct band gap of 2eV, what is the required light wavelength to
generate carriers.
b) 100 photons of 650 nm wavelength have been shined on the above material. How
many electron-hole pairs will be generated?
c) A photon has energy of 2.1eV and another photon has an energy of 4.2eV, how many
electron-hole pairs will be generated in the above material.
d) If we want to use a 700 nm light source where should the defect level be present.
Q8. What do you mean by mobility? State and explain how mobility depends on various
factors. Sketch the variation of mobility with temperature giving proper reason.
Q9 Using the constancy of Fermi-level in equilibrium, draw the band diagrams for the
following junction.
Please draw approximate diagrams with reasonable assumptions.
a. N-type highly doped (N+) to N-type low doped (N) semiconductor - N+N junction
b. Metal to N-type semiconductor
i. Metal work-function > semiconductor fermi level
ii. Metal work-function < semiconductor fermi level
c. Repeat (b) with P-type semiconductor
d. N-type semiconductor to P-type semiconductor
e. Very highly doped N-type semiconductor to Very highly doped P-type
semiconductor
f. P-type semiconductor to Intrinsic semiconductor
g. P-type semiconductor to Intrinsic semiconductor to N-type semiconductor
h. P-type semiconductor to N-type semiconductor to P-type semiconductor
i. N-type semiconductor to P-type semiconductor to N-type semiconductor
j. Metal1-Oxide-Metal2 (choose different work function for metals)
k. Metal1-Oxide-P-type semiconductor
i. Metal work-function > semiconductor fermi level
ii. Metal work-function < semiconductor fermi level
l. N-type semiconductor 1 (Bandgap = 5eV) to N-type semiconductor 2 (Bandgap =
4eV)
i. Consider same doping for both i.e. EC - EF is the same for both.
ii. Electron affinity 1 > Electron affinity 2