IMT65R163M1H

MOSFET
650VCoolSiCªM1SiCTrenchPowerDevice PG-HSOF-8

The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology
developedinInfineoninmorethan20years.Leveragingthewidebandgap Tab

SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique Tab
combinationofperformance,reliabilityandeaseofuse.Suitableforhigh
temperatureandharshoperations,itenablesthesimplifiedandcost 1
effectivedeploymentofthehighestsystemefficiency. 2
3
45
8
7
6 6
7 5
8 4
3
2
Features 1

•Optimizedswitchingbehaviorathighercurrents
•CommutationrobustfastbodydiodewithlowQf
•Superiorgateoxidereliability
•Tj,max=175°Candexcellentthermalbehavior Drain
•LowerRDS(on)andpulsecurrentdependencyontemperature Tab

•Increasedavalanchecapability
•Compatiblewithstandarddrivers(recommendeddrivingvoltage:0V-18V) Gate *1

•Kelvinsourceprovidesupto4timeslowerswitchinglosses Pin 1
Driver
Source
Source
Pin 2
Benefits *1: Internal body diode
Pin 3-8

•Uniquecombinationofhighperformance,highreliabilityandeaseofuse
•Easeofuseandintegration
•Suitablefortopologieswithcontinuoushardcommutation
•Higherrobustnessandsystemreliability
•Efficiencyimprovement
•Reducedsystemsizeleadingtohigherpowerdensity

Potentialapplications
•SMPS
•UPS(uninterruptablepowersupplies)
•SolarPVinverters
•EVcharginginfrastructure
•Energystorageandbatteryformation
•ClassDamplifiers

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS@TJ=25°C 650 V
RDS(on),typ 163 mΩ
RDS(on),max 217 mΩ
QG,typ 10 nC
IDM 31 A
Qoss@400V 27 nC
Eoss@400V 4.1 µJ

Type/OrderingCode Package Marking RelatedLinks

IMT65R163M1H PG-HSOF-8 65R163M1 see Appendix A

Final Data Sheet 1 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Final Data Sheet 2 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
IMT65R163M1H

1Maximumratings
atTJ=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 19 TC=25°C
Continuous DC drain current1) ID A
- - 13 TC=100°C
Peak drain current2) IDM - - 31 A TC=25°C
Avalanche energy, single pulse EAS - - 49 mJ ID=1.8A,VDD=50V;seetable11
Avalanche energy, repetitive EAR - - 0.24 mJ ID=1.8A,VDD=50V;seetable11
Avalanche current, single pulse IAS - - 1.8 A -
MOSFETdv/dtruggedness dv/dt - - 200 V/ns VDS=0...400V
Gate source voltage (static)3) VGS -5 - 23 V static
Gate source voltage (transient) VGS -7 - 25 V tpulse<=1%dutycycle/fsw
Power dissipation Ptot - - 106 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature TJ -55 - 175 °C -
Mounting torque - - - n.a. Ncm -
- - 13 VGS=18V,TC=25°C
Continuous reverse drain current1) ISDC A
- - 12 VGS=0V,TC=25°C
Repetitive peak reverse drain current1) ISRM - - 31 A TC=25°C,pulsewidthtp<=250ns
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
LimitedbyTJ,max
2)
PulsewidthtplimitedbyTJ,max
3)
The maximum gate-source voltage in the application design should be in accordance to IPC-9592B
Final Data Sheet 3 Rev.2.0,2023-03-08
 650VCoolSiCªM1SiCTrenchPowerDevice
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2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 1.41 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient layer, 70µm thickness) copper area
RthJA - 35 45 °C/W
for SMD version for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave- & reflow
Tsold - - 260 °C reflow MSL2
soldering allowed

3Operatingrange

Table4Operatingrange
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate-source voltage operating range
VGS -2 - 20 V -
including undershoots1)

1)
Importantnotice:Ifthegatesourcevoltageofthedeviceinapplicationexceedstheoperatingrange(Table4),thedevice
RDS(on)andVGS(th)mightexceedthemaximumvaluestatedinthedatasheetattheendofthelifetimeofthedevice.Inorderto
ensure sound operation of the device over the planned lifetime, the maximum ratings (Table 2) and the CoolSiCTM MOSFET
650V M1 trench power device application note AN_1907_PL52_1911_144109 must be considered.
Final Data Sheet 4 Rev.2.0,2023-03-08
 650VCoolSiCªM1SiCTrenchPowerDevice
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4Electricalcharacteristics
atTJ=25°C,unlessotherwisespecified

Table5Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=0.17mA
Gate threshold voltage1) VGS(th) 3.5 4.5 5.7 V VDS=VGS,ID=1.7mA
- 1 150 VDS=650V,VGS=0V,TJ=25°C
Zero gate voltage drain current IDSS µA
- 3 - VDS=650V,VGS=0V,TJ=175°C
Gate leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.163 0.217 VGS=18V,ID=5.7A,TJ=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.228 - VGS=18V,ID=5.7A,TJ=175°C
Internal gate resistance RG - 16.0 - Ω f=1MHz

Table6Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 320 - pF VGS=0V,VDS=400V,f=250kHz
Reverse transfer capacitance Crss - 5 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance 2)
Coss - 45 58 pF VGS=0V,VDS=400V,f=250kHz
Output charge 2)
Qoss - 27 35 nC calculationbasedonCoss
Effective output capacitance, energy VGS=0V,
Co(er) - 52 - pF
related3) VDS=0...400V
Effective output capacitance, time ID=constant,VGS=0V,
Co(tr) - 68 - pF
related4) VDS=0...400V
VDD=400V,VGS=18V,ID=5.7A,
Turn-on delay time td(on) - 5.5 - ns
RG=1.8Ω;seetable10
VDD=400V,VGS=18V,ID=5.7A,
Rise time tr - 5.9 - ns
RG=1.8Ω;seetable10
VDD=400V,VGS=18V,ID=5.7A,
Turn-off delay time td(off) - 8.6 - ns
RG=1.8Ω;seetable10
VDD=400V,VGS=18V,ID=5.7A,
Fall time tf - 10 - ns
RG=1.8Ω;seetable10

1)
Testedafter1mspulseatVGS=+20V
2)
Maximumspecificationisdefinedbycalculatedsixsigmaupperconfidencebound
3)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
4)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.0,2023-03-08
 650VCoolSiCªM1SiCTrenchPowerDevice
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Table7Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
VDD=400V,ID=5.7A,
Gate to source charge Qgs - 2 - nC
VGS=0to18V
VDD=400V,ID=5.7A,
Gate to drain charge Qgd - 2 - nC
VGS=0to18V
VDD=400V,ID=5.7A,
Gate charge total Qg - 10 - nC
VGS=0to18V

Table8Bodydiodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source reverse voltage VSD - 4.0 - V VGS=0V,IS=5.7A,TJ=25°C
VDD=400V,IS0=5.7A,
MOSFET forward recovery time tfr - 17 - ns
diS/dt=1000A/µs;seetable9
VDD=400V,IS0=5.7A,
MOSFET forward recovery charge Qf - 39 - nC
diS/dt=1000A/µs;seetable9
MOSFET peak forward recovery VDD=400V,IS0=5.7A,
Ifrm - 4.6 - A
current diS/dt=1000A/µs;seetable9

Final Data Sheet 6 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
125 103

102
100

1 µs
101

75 10 µs
Ptot[W]

ID[A]
100
100 µs
50

10-1 1 ms
10 ms
DC
25
10-2

0 10-3
0 25 50 75 100 125 150 175 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 101

102

101 1 µs 100
0.5

10 µs
ZthJC[K/W]

0.2
ID[A]

0
10 0.1
0.05 0.02
100 µs
0.01
10-1 10-1 single pulse
1 ms
10 ms
DC
10-2

10-3 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
60 60

50 20 V 50

20 V
40 18 V 40

18 V
ID[A]

ID[A]
30 30

15 V 15 V

20 20

12 V
12 V
10 10
10 V
10 V
8V
8V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=150°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.55 2.0

0.50

0.45
1.5
RDS(on)[normalized]

0.40 10 V 12 V 15 V 18 V 20 V
RDS(on)[Ω]

0.35

1.0
0.30

0.25

0.20 0.5
0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 175
ID[A] TJ[°C]
RDS(on)=f(ID);Tj=150°C;parameter:VGS RDS(on)=f(Tj);ID=5.7A;VGS=18V

Final Data Sheet 8 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
60 20

18

50
16

14
40

12

VGS[V]
ID[A]

30 10
400 V
8

20
6

4
10 175 °C 25 °C

0 0
0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 11
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=5.7Apulsed;parameter:VDD

Diagram11:Typ.reversecharacteristics Diagram12:Typ.reversecharacteristics
2
10 102

101 101 25 °C
ISD[A]

ISD[A]

175 °C
175 °C 25 °C

100 100

10-1 10-1
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VSD[V] VSD[V]
ISD=f(VSD);VGS=0V;parameter:Tj ISD=f(VSD);VGS=18V;parameter:Tj

Final Data Sheet 9 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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Diagram13:Avalancheenergy Diagram14:Drain-sourcebreakdownvoltage
50 690

45
680
40

35 670

30
660
EAS[mJ]

V(BR)DSS[V]
25

650
20

15 640

10
630
5

0 620
25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TJ[°C] TJ[°C]
EAS=f(Tj);ID=1.8A;VDD=50V V(BR)DSS=f(Tj);ID=0.17mA

Diagram15:Typ.capacitances Diagram16:Typ.Cossstoredenergy
4
10 7

103
5
Ciss

4
Eoss[µJ]
C[pF]

2
10
Coss
3

2
101
Crss

100 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500
VDS[V] VDS[V]
C=f(VDS);VGS=0V;f=250kHz Eoss=f(VDS)

Final Data Sheet 10 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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Diagram17:Typ.Qossoutputcharge
35

30

25

20
Qoss[nC]

15

10

0
0 50 100 150 200 250 300 350 400 450 500
VDS[V]
Qoss=f(VDS)

Final Data Sheet 11 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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6TestCircuits

Table9Bodydiodecharacteristics(CoolSiC)
Test circuit for body diode characteristics Body diode recovery waveform

VDS
+
VDD

RG2 VDS
IS
- Is
ISO tfr
IS
VDD
dIs / dt

RG1 Ifrm
Qf

Ifrm

Table10Switchingtimes(CoolSiC)
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS VDD 10%

VGS
VGS
td(on) tr td(off) tf
RG
ton toff

Table11Unclampedinductiveload(CoolSiC)
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DSS

VDD
ID
VDS

VDS VDS
ID

Final Data Sheet 12 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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7PackageOutlines

PACKAGE - GROUP
NUMBER: PG-HSOF-8-U02
MILLIMETERS
DIMENSIONS
MIN. MAX.
A 2.20 2.40
b 0.70 0.90
b1 9.70 9.90
b2 0.42 0.50
c 0.40 0.60
D 10.28 10.58
D1 3.30
E 9.70 10.10
E1 7.50
E2 8.50
E3 9.46
e 1.20 (BSC)
H 11.48 11.88
H1 6.55 6.75
H2 7.15
H3 3.59
H4 3.26
N 8
K 4.18
L 1.60
L1 0.50 0.90
L2 0.50 0.70
L3 1.00 1.30
L4 2.62 2.81

Figure1OutlinePG-HSOF-8,dimensionsinmm/inches

Final Data Sheet 13 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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8AppendixA

Table12RelatedLinks
• IFXCoolSiCM1Webpage:[Link]

• IFXCoolSiCM1applicationnote:[Link]

• IFXCoolSiCM1simulationmodel:[Link]

• IFXDesigntools:[Link]

Final Data Sheet 14 Rev.2.0,2023-03-08

 650VCoolSiCªM1SiCTrenchPowerDevice
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RevisionHistory
IMT65R163M1H

Revision:2023-03-08,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2023-03-08 Release of final version

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©2023InfineonTechnologiesAG
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
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failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet 15 Rev.2.0,2023-03-08