Capacitance

Capacitance is the ability of an object to store electric

charge. It is measured by the change in charge in response to Common symbols C
a difference in electric potential, expressed as the ratio of SI unit farad
those quantities. Commonly recognized are two closely Other units μF, nF, pF
related notions of capacitance: self capacitance and mutual In SI base units F = A2 s4 kg−1 m−2
capacitance. [1]: 237–238 An object that can be electrically
Derivations from C = charge / voltage
charged exhibits self capacitance, for which the electric other quantities
potential is measured between the object and ground. Mutual
Dimension
capacitance is measured between two components, and is
particularly important in the operation of the capacitor, an
elementary linear electronic component designed to add capacitance to an electric circuit.

The capacitance between two conductors depends only on the geometry; the opposing surface area of the
conductors and the distance between them; and the permittivity of any dielectric material between them.
For many dielectric materials, the permittivity, and thus the capacitance, is independent of the potential
difference between the conductors and the total charge on them.

The SI unit of capacitance is the farad (symbol: F), named after the English physicist Michael Faraday.[2] A 1
farad capacitor, when charged with 1 coulomb of electrical charge, has a potential difference of 1 volt
between its plates.[3] The reciprocal of capacitance is called elastance.

Self capacitance
In discussing electrical circuits, the term capacitance is usually a shorthand for the mutual capacitance
between two adjacent conductors, such as the two plates of a capacitor. However, every isolated conductor
also exhibits capacitance, here called self capacitance. It is measured by the amount of electric charge that
must be added to an isolated conductor to raise its electric potential by one unit of measurement, e.g., one
volt.[4] The reference point for this potential is a theoretical hollow conducting sphere, of infinite radius,
with the conductor centered inside this sphere.

Self capacitance of a conductor is defined by the ratio of charge and electric potential:

where

is the charge held,

is the electric potential,

is the surface charge density,

is an infinitesimal element of area on the surface of the conductor, over which the surface charge
density is integrated,
is the length from to a fixed point M on the conductor,
 is the vacuum permittivity.
Using this method, the self capacitance of a conducting sphere of radius in free space (i.e. far away from
any other charge distributions) is:[2]

Example values of self capacitance are:

for the top "plate" of a van de Graaff generator, typically a sphere 20 cm in radius: 22.24 pF,
the planet Earth: about 710 μF.[5]
The inter-winding capacitance of a coil is sometimes called self capacitance,[6] but this is a different
phenomenon. It is actually mutual capacitance between the individual turns of the coil and is a form of stray
or parasitic capacitance. This self capacitance is an important consideration at high frequencies: it changes
the impedance of the coil and gives rise to parallel resonance. In many applications this is an undesirable
effect and sets an upper frequency limit for the correct operation of the circuit.

Mutual capacitance
A common form is a parallel-plate capacitor, which consists of two conductive plates insulated from each
other, usually sandwiching a dielectric material. In a parallel plate capacitor, capacitance is very nearly
proportional to the surface area of the conductor plates and inversely proportional to the separation
distance between the plates.

If the charges on the plates are and , and gives the voltage between the plates, then the capacitance
is given by

which gives the voltage/current relationship

where is the instantaneous rate of change of voltage, and is the instantaneous rate of change of
the capacitance. For most applications, the change in capacitance over time is negligible, so the formula
reduces to:

The energy stored in a capacitor is found by integrating the work :

Capacitance matrix
The discussion above is limited to the case of two conducting plates, although of arbitrary size and shape.
The definition does not apply when there are more than two charged plates, or when the net
charge on the two plates is non-zero. To handle this case, James Clerk Maxwell introduced his coefficients
of potential. If three (nearly ideal) conductors are given charges , then the voltage at conductor 1
is given by

and similarly for the other voltages. Hermann von Helmholtz and Sir William Thomson showed that the
coefficients of potential are symmetric, so that , etc. Thus the system can be described by a
collection of coefficients known as the elastance matrix or reciprocal capacitance matrix, which is defined
as:

From this, the mutual capacitance between two objects can be defined[7] by solving for the total charge
and using .

Since no actual device holds perfectly equal and opposite charges on each of the two "plates", it is the
mutual capacitance that is reported on capacitors.

The collection of coefficients is known as the capacitance matrix,[8][9][10] and is the inverse of

the elastance matrix.

Capacitors
The capacitance of the majority of capacitors used in electronic circuits is generally several orders of
magnitude smaller than the farad. The most common units of capacitance are the microfarad (μF),
nanofarad (nF), picofarad (pF), and, in microcircuits, femtofarad (fF). Some applications also use
supercapacitors that can be much larger, as much as hundreds of farads, and parasitic capacitive elements
can be less than a femtofarad. Historical texts use other, obsolete submultiples of the farad, such as "mf"
and "mfd" for microfarad (μF); "mmf", "mmfd", "pfd", "μμF" for picofarad (pF).[11][12]

The capacitance can be calculated if the geometry of the conductors and the dielectric properties of the
insulator between the conductors are known. Capacitance is proportional to the area of overlap and
inversely proportional to the separation between conducting sheets. The closer the sheets are to each other,
the greater the capacitance.

An example is the capacitance of a capacitor constructed of two parallel plates both of area separated by a
distance . If is sufficiently small with respect to the smallest chord of , there holds, to a high level of
accuracy:

where
 is the capacitance, in farads;
is the area of overlap of the two plates, in square meters;
is the electric constant ( );
is the relative permittivity (also dielectric constant) of the material in between the plates ( for
air); and
is the separation between the plates, in meters.
The equation is a good approximation if d is small compared to the other dimensions of the plates so that
the electric field in the capacitor area is uniform, and the so-called fringing field around the periphery
provides only a small contribution to the capacitance.

Combining the equation for capacitance with the above equation for the energy stored in a capacitor, for a
flat-plate capacitor the energy stored is:

where is the energy, in joules; is the capacitance, in farads; and is the voltage, in volts.

Stray capacitance
Any two adjacent conductors can function as a capacitor, though the capacitance is small unless the
conductors are close together for long distances or over a large area. This (often unwanted) capacitance is
called parasitic or stray capacitance. Stray capacitance can allow signals to leak between otherwise isolated
circuits (an effect called crosstalk), and it can be a limiting factor for proper functioning of circuits at high
frequency.

Stray capacitance between the input and output in amplifier circuits can be troublesome because it can form
a path for feedback, which can cause instability and parasitic oscillation in the amplifier. It is often
convenient for analytical purposes to replace this capacitance with a combination of one input-to-ground
capacitance and one output-to-ground capacitance; the original configuration – including the input-to-
output capacitance – is often referred to as a pi-configuration. Miller's theorem can be used to effect this
1
replacement: it states that, if the gain ratio of two nodes is ⁠K ⁠, then an impedance of Z connecting the two
Z KZ
nodes can be replaced with a ⁠1 − K ⁠ impedance between the first node and ground and a ⁠K − 1 ⁠ impedance
between the second node and ground. Since impedance varies inversely with capacitance, the internode
(K − 1)C
capacitance, C, is replaced by a capacitance of KC from input to ground and a capacitance of ⁠ K
⁠ from
output to ground. When the input-to-output gain is very large, the equivalent input-to-ground impedance is
very small while the output-to-ground impedance is essentially equal to the original (input-to-output)
impedance.

Capacitance of conductors with simple shapes

Calculating the capacitance of a system amounts to solving the Laplace equation with a constant
potential on the 2-dimensional surface of the conductors embedded in 3-space. This is simplified by
symmetries. There is no solution in terms of elementary functions in more complicated cases.
For plane situations, analytic functions may be used to map different geometries to each other. See also
Schwarz–Christoffel mapping.
 Capacitance of simple systems
Type Capacitance Diagram and definitions

Parallel-plate
capacitor
: Permittivity

Concentric
cylinders

: Permittivity

Eccentric : Permittivity
cylinders[13] : Outer radius
: Inner radius
: Distance between
center
: Wire length

Pair of parallel
wires[14]

Wire parallel : Wire radius

to wall[14] : Distance,
: Wire length

: Distance
: Length
: Strip width
Two parallel
coplanar
strips[15]

: Complete elliptic
integral of the first kind

Concentric
spheres

: Permittivity
 : Radius
: Distance,

: Euler's constant

Two spheres, : the

equal
radius[16][17] q-digamma function
: the q-gamma
function[18]
See also Basic
hypergeometric
series.

: Radius
Sphere in
front of wall[16] : Distance,

Sphere : Radius

Circular
disc[19] : Radius

Thin straight
: Wire radius
wire,
finite : Length
length[20][21][22]

Energy storage
The energy (measured in joules) stored in a capacitor is equal to the work required to push the charges into
the capacitor, i.e. to charge it. Consider a capacitor of capacitance C, holding a charge +q on one plate and
−q on the other. Moving a small element of charge dq from one plate to the other against the potential
difference V = q/C requires the work dW:

where W is the work measured in joules, q is the charge measured in coulombs and C is the capacitance,
measured in farads.

The energy stored in a capacitor is found by integrating this equation. Starting with an uncharged
capacitance (q = 0) and moving charge from one plate to the other until the plates have charge +Q and −Q
requires the work W:
Nanoscale systems
The capacitance of nanoscale dielectric capacitors such as quantum dots may differ from conventional
formulations of larger capacitors. In particular, the electrostatic potential difference experienced by
electrons in conventional capacitors is spatially well-defined and fixed by the shape and size of metallic
electrodes in addition to the statistically large number of electrons present in conventional capacitors. In
nanoscale capacitors, however, the electrostatic potentials experienced by electrons are determined by the
number and locations of all electrons that contribute to the electronic properties of the device. In such
devices, the number of electrons may be very small, so the resulting spatial distribution of equipotential
surfaces within the device is exceedingly complex.

Single-electron devices
The capacitance of a connected, or "closed", single-electron device is twice the capacitance of an
unconnected, or "open", single-electron device.[23] This fact may be traced more fundamentally to the
energy stored in the single-electron device whose "direct polarization" interaction energy may be equally
divided into the interaction of the electron with the polarized charge on the device itself due to the presence
of the electron and the amount of potential energy required to form the polarized charge on the device (the
interaction of charges in the device's dielectric material with the potential due to the electron).[24]

Few-electron devices
The derivation of a "quantum capacitance" of a few-electron device involves the thermodynamic chemical
potential of an N-particle system given by

whose energy terms may be obtained as solutions of the Schrödinger equation. The definition of
capacitance,

with the potential difference

may be applied to the device with the addition or removal of individual electrons,

and

The "quantum capacitance" of the device is then[25]

This expression of "quantum capacitance" may be written as

which differs from the conventional expression described in the introduction where , the stored
electrostatic potential energy,

1
by a factor of ⁠2 ⁠with .

However, within the framework of purely classical electrostatic interactions, the appearance of the factor of
1
2
⁠ is the result of integration in the conventional formulation involving the work done when charging a
capacitor,

which is appropriate since for systems involving either many electrons or metallic electrodes, but in
few-electron systems, . The integral generally becomes a summation. One may trivially
combine the expressions of capacitance

and electrostatic interaction energy,

to obtain

which is similar to the quantum capacitance. A more rigorous derivation is reported in the literature.[26] In
particular, to circumvent the mathematical challenges of spatially complex equipotential surfaces within the
device, an average electrostatic potential experienced by each electron is utilized in the derivation.

Apparent mathematical differences may be understood more fundamentally. The potential energy, ,
of an isolated device (self-capacitance) is twice that stored in a "connected" device in the lower limit .
As grows large, .[24] Thus, the general expression of capacitance is

In nanoscale devices such as quantum dots, the "capacitor" is often an isolated or partially isolated
component within the device. The primary differences between nanoscale capacitors and macroscopic
(conventional) capacitors are the number of excess electrons (charge carriers, or electrons, that contribute
to the device's electronic behavior) and the shape and size of metallic electrodes. In nanoscale devices,
nanowires consisting of metal atoms typically do not exhibit the same conductive properties as their
macroscopic, or bulk material, counterparts.
Capacitance in electronic and semiconductor devices
In electronic and semiconductor devices, transient or frequency-dependent current between terminals
contains both conduction and displacement components. Conduction current is related to moving charge
carriers (electrons, holes, ions, etc.), while displacement current is caused by a time-varying electric field.
Carrier transport is affected by electric fields and by a number of physical phenomena - such as carrier drift
and diffusion, trapping, injection, contact-related effects, impact ionization, etc. As a result, device
admittance is frequency-dependent, and a simple electrostatic formula for capacitance is not
applicable. A more general definition of capacitance, encompassing electrostatic formula, is:[27]

where is the device admittance, and is the angular frequency.

In general, capacitance is a function of frequency. At high frequencies, capacitance approaches a constant

value, equal to "geometric" capacitance, determined by the terminals' geometry and dielectric content in the
device. A paper by Steven Laux[27] presents a review of numerical techniques for capacitance calculation. In
particular, capacitance can be calculated by a Fourier transform of a transient current in response to a step-
like voltage excitation:

Negative capacitance in semiconductor devices

Usually, capacitance in semiconductor devices is positive. However, in some devices and under certain
conditions (temperature, applied voltages, frequency, etc.), capacitance can become negative. Non-
monotonic behavior of the transient current in response to a step-like excitation has been proposed as the
mechanism of negative capacitance.[28] Negative capacitance has been demonstrated and explored in many
different types of semiconductor devices.[29]

Measuring capacitance
A capacitance meter is a piece of electronic test equipment used to measure capacitance, mainly of discrete
capacitors. For most purposes and in most cases the capacitor must be disconnected from circuit.

Many DVMs (digital volt meters) have a capacitance-measuring function. These usually operate by charging
and discharging the capacitor under test with a known current and measuring the rate of rise of the
resulting voltage; the slower the rate of rise, the larger the capacitance. DVMs can usually measure
capacitance from nanofarads to a few hundred microfarads, but wider ranges are not unusual. It is also
possible to measure capacitance by passing a known high-frequency alternating current through the device
under test and measuring the resulting voltage across it (does not work for polarised capacitors).

More sophisticated instruments use other techniques such as inserting the capacitor-under-test into a
bridge circuit. By varying the values of the other legs in the bridge (so as to bring the bridge into balance),
the value of the unknown capacitor is determined. This method of indirect use of measuring capacitance
ensures greater precision. Through the use of Kelvin connections
and other careful design techniques, these instruments can usually
measure capacitors over a range from picofarads to farads.

An Andeen-Hagerling ([Link]
See also -[Link]) 2700A capacitance
bridge
Capacitive displacement Gauss law
sensor LCR meter
Capacity of a set Magnetocapacitance
Displacement current Quantum capacitance

References
1. Harrington, Roger F. (2003). Introduction to Electromagnetic Engineering (1st ed.). Dover Publications.
p. 43. ISBN 0-486-43241-6.
2. "Lecture notes: Capacitance and Dieletrics" ([Link]
[Link]/COURSES/FIRST_YEAR/pdf%20files/[Link]) (PDF). University
of New South Wales. Archived from the original ([Link]
R/pdf%20files/[Link]) (PDF) on 26 February 2009.
3. "Definition of 'farad' " ([Link] Collins.
4. William D. Greason (1992). Electrostatic discharge in electronics ([Link]
04fAQAAIAAJ). Research Studies Press. p. 48. ISBN 978-0-86380-136-5.
5. Tipler, Paul; Mosca, Gene (2004). Physics for Scientists and Engineers (5th ed.). Macmillan. p. 752.
ISBN 978-0-7167-0810-0.
6. Massarini, A.; Kazimierczuk, M. K. (1997). "Self capacitance of inductors". IEEE Transactions on Power
Electronics. 12 (4): 671–676. Bibcode:1997ITPE...12..671M ([Link]
E...12..671M). CiteSeerX [Link].7356 ([Link]
05.7356). doi:10.1109/63.602562 ([Link] example of the use of the
term 'self capacitance'.
7. Jackson, John David (1999). Classical Electrodynamic (3rd ed.). John Wiley & Sons. p. 43. ISBN 978-0-
471-30932-1.
8. Maxwell, James (1873). "3" ([Link] A treatise on
electricity and magnetism. Vol. 1. Clarendon Press. p. 88ff.
9. "Capacitance: Charge as a Function of Voltage" ([Link]
[Link]. Retrieved 20 September 2010.
10. Smolić, Ivica; Klajn, Bruno (2021). "Capacitance matrix revisited" ([Link]
paper=21011501). Progress in Electromagnetics Research B. 92: 1–18. arXiv:2007.10251 ([Link]
org/abs/2007.10251). doi:10.2528/PIERB21011501 ([Link]
Retrieved 4 May 2021.
11. "Capacitor MF-MMFD Conversion Chart" ([Link] Just Radios.
12. Fundamentals of Electronics ([Link] Vol. 1b
– Basic Electricity – Alternating Current. Bureau of Naval Personnel. 1965. p. 197 ([Link]
tails/FundamentalsOfElectronics93400A1b/page/n58).
13. Dawes, Chester L. (1973). "Capacitance and potential gradients of eccentric cylindrical condensers" (htt
ps://[Link]/doi/abs/10.1063/1.1745162). Physics. 4 (2): 81–85. doi:10.1063/1.1745162 (https://
[Link]/10.1063%2F1.1745162).
14. Jackson, J. D. (1975). Classical Electrodynamics. Wiley. p. 80.
15. Binns; Lawrenson (1973). Analysis and computation of electric and magnetic field problems. Pergamon
Press. ISBN 978-0-08-016638-4.