Electronic Devices
Tutorial -2
BITS Pilani, K K Birla Goa Campus
Question – 1
Assume that EF is 0.3 eV below EC. Determine the temperature at
which the probability of an electron occupying an energy state at E
=(EC +0.025) eV is 8 x10-6
BITS Pilani, K K Birla Goa Campus
Question – 2
(a) Calculate the intrinsic carrier concentration in GaAs at T=400 K and
at T=250 K. Assume that Eg=1.42 eV is constant over this temperature
range. (b) What is the ratio of ni at T=400 K to that at T=250 K? Given
NC=4.7x1017 cm-3 NV=7.0x1018 cm-3 at 300K
BITS Pilani, K K Birla Goa Campus
Question 3
A new semiconductor material is to be “designed.” The semiconductor is to be p
type and doped with 5x1015 cm-3 acceptor atoms. Assume complete ionization and
assume ND=0. The effective density of states functions are NC=1.2x1019 cm-3 and
NV=1.8x1019 cm-3 at T=300 K and vary as T2. A special semiconductor device
fabricated with this material requires that the hole concentration be no greater than
5.08x1015 cm-3 at T =350 K. What is the minimum bandgap energy required in this
new material?
BITS Pilani, K K Birla Goa Campus
Question – 4
A Si device has the following electron densities in the On and OFF states:
ON : 1018 cm-3
OFF : 1014 cm-3
Calculate the values of EC-EF for the On and Off cases at 300K. Also
calculate the hole densities for each case. NC = 2.78x1019 cm-3 at 300K,
ni=1.5x1010 cm-3
BITS Pilani, K K Birla Goa Campus
Question – 5
For a particular semiconductor, Eg= 1.50 eV, mp* =10 mn* , T=300 K, and
Ni=1x105 cm-3. (a) Determine the position of the intrinsic Fermi energy level with
respect to the center of the bandgap. (b) Impurity atoms are added so that the Fermi
energy level is 0.45 eV below the center of the bandgap. (i) Are acceptor or donor
atoms added? (ii) What is the concentration of impurity atoms added?
BITS Pilani, K K Birla Goa Campus
Question 6
Consider n-type silicon at T =300 K doped with arsenic. Determine
the maximum doping at which the Boltzmann approximation is still
valid. Assume the limit is such that Ed-EF =3kT and donor
ionization energy is 0.05eV. NC = 2.78x1019 cm-3
BITS Pilani, K K Birla Goa Campus
Practice problems
1. Assume that the Fermi energy level is 0.35 eV above the valence band energy.
Let T=300 K. (a) Determine the probability of a state being empty of an electron
at E=EV-kT/2. (b) Repeat part (a) for an energy state at E=EV-3kT/2.
2. Consider silicon at T=300 K. Calculate the thermal-equilibrium electron and hole
concentrations for impurity concentrations of (a) Na=4x1016 cm-3, Nd=8x1015 cm-
3 and (b) Na=Nd=3x1015 cm-3.
3. Given T=300K, 𝑁𝐴=0, and the Si energy band diagram shown below, determine
a. n
b. p
c. 𝑁𝐷
d. How does your answer change if it is known 𝑁𝐴=1014 𝑐𝑚−3?
4. When the fermi level in a semiconductor is within 3kT from the band edge, the
semiconductor is called as degenerate. Assuming Boltzmann Approximation, at
room temperature find the doping in Si at which the semiconductor becomes
degenerate.
BITS Pilani, K K Birla Goa Campus
5. Silicon at T 300 K is doped with boron atoms such that the concentration of holes
is p0 = 5 x1015 cm-3. (a) Find EF-Ev. (b) Determine Ec-EF. (c) Determine n0.
(d) Which carrier is the majority carrier? (e) Determine Ei-EF.
6. Determine the work functions of N-type and P-type silicon samples with equal doping
levels: ND = NA = 1016 cm−3. The difference between the vacuum level and the bottom
of the conduction band (the electron affinity) in silicon is qχs = 4.05 eV, the energy gap is
Eg = 1.12 eV, and the effective densities of states in the conduction and valence bands are
NC = 2.86 × 1019 cm−3 and NV = 3.1 × 1019 cm−3
7. Si at T=300K is doped with donor atoms at a concentration of 𝑁𝐷 = 1016𝑐𝑚−3.
i. Determine the location of the fermi level and sketch the band diagram clearly marking all
relevant energies.
ii. Calculate the concentration of additional donor atoms that must be added to move the
Fermi level 50meV closer to the conduction band.
BITS Pilani, K K Birla Goa Campus