ECA01 – Semiconductor devices
Tutorial Topic 8 – MOSFET
1. A MOSFET has a substrate doping concentration of 1016 cm−3, an oxide thickness of
10 nm, and a work function difference of 0.7 V. Calculate the threshold voltage VT
assuming full depletion at threshold.
2. Given a MOSFET with channel width W=10 μm, channel length L=1 μm, oxide
capacitance Cox=4 fF/μm², and electron mobility μn=400 cm²/V·s, calculate ID for
VGS=2V and VT=0.8V.
3. For a MOSFET with I0=10 nA and n=1.5, calculate the drain current for VGS=0.6V if
VT=0.4V.
4. For a MOSFET with W=10 μm, L=1 μm, and Cox=4 fF/μm², compute the gate
capacitance in strong inversion and at the threshold region.
5. For a MOSFET with W=10 μm, L=1 μm, Cox=4 fF/μm², and μn=400 cm²/V·s, calculate
gm at VGS=1.8V if VT=0.8V.
6. If ID=200 μA and λ=0.02 V−1, calculate ro and discuss its significance in amplifier
circuits.
7. A MOSFET operates with VDS=2.5V and ID=1.2 mA. Calculate the power dissipation
and suggest techniques to minimize power consumption.
8. For a MOSFET with n=1.5, calculate the subthreshold slope S at room temperature (T
= 300K) and explain its importance in low-power circuits.
9. For a MOSFET with VT0=0.8V, γ=0.4V1/2, and ϕF=0.3V, calculate VT for VSB=1V.
10. For a MOSFET with gm=5 mS and Cgg=2 pF, calculate fT and discuss its relevance in
high-frequency applications.