NTR4502PT1G

[Link]

P-Channel 30 V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY • TrenchFET® Power MOSFET
VDS (V) RDS(on) () Typ. ID (A)a Qg (Typ.) • 100 % Rg Tested
0.046 at VGS = - 10 V - 5.6
- 30 0.049 at VGS = - 6 V -5 11.4 nC
APPLICATIONS
0.054 at VGS = - 4.5 V -4.5
• For Mobile Computing
- Load Switch
- Notebook Adaptor Switch
S
TO-236 - DC/DC Converter
(SOT-23)

G 1 G

3 D

S 2

D
Top View
P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 5.6
TC = 70 °C - 5.1
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C - 5.4b,c
TA = 70 °C - 4.3b,c A
Pulsed Drain Current (t = 100 µs) IDM - 18
TC = 25 °C - 2.1
Continous Source-Drain Diode Current IS
TA = 25 °C - 1b,c
TC = 25 °C 2.5
TC = 70 °C 1.6
Maximum Power Dissipation PD W
TA = 25 °C 1.25b,c
TA = 70 °C 0.8b,c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b,d t5s RthJA 75 100
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.

E-mail：China@VBsemi TEL:86-755-83251052
1
 NTR4502PT1G
[Link]

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V
VDS Temperature Coefficient VDS/TJ - 19
ID = - 250 µA mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ 4
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 0.5 - 2.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5
On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 2.5 A
VGS - 10 V, I D= - .4 A 0.046 0.055
Drain-Source On-State Resistancea RDS(on) VGS - 6 V, I D= - A 0.049 0.058 
VGS - 4.5 V, I D= - .6 A 0.054 0.0 63
Forward Transconductancea gfs VDS = - 15 V, ID = - .4 A 18 S
Dynamicb
Input Capacitance Ciss 1295
Output Capacitance Coss VDS = - 15 V, VGS = 0 V, f = 1 MHz 150 pF
Reverse Transfer Capacitance Crss 130
VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A 24 36
Total Gate Charge Qg
11.4 17
nC
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A 3.4
Gate-Drain Charge Qgd 3.8
Gate Resistance Rg f = 1 MHz 1.5 7.7 15.4 
Turn-On Delay Time td(on) 13 20
Rise Time tr VDD = - 15 V, RL = 3.5  4 8
Turn-Off Delay Time td(off) ID  - 4.3 A, VGEN = - 10 V, Rg = 1  38 57
Fall Time tf 6 12
ns
Turn-On Delay Time td(on) 28 42
Rise Time tr VDD = - 15 V, RL = 3.5  16 24
Turn-Off Delay Time td(off) ID  - 4.3 A, VGEN = - 4.5 V, Rg = 1  30 45
Fall Time tf 10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - 2.1
A
Pulse Diode Forward Current (t = 100 µs) ISM - 80
Body Diode Voltage VSD IS = - 4.3 A, VGS 0 V - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr 15 23 ns
Body Diode Reverse Recovery Charge Qrr 7 14 nC
IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 8
ns
Reverse Recovery Rise Time tb 7
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

E-mail：China@VBsemi TEL:86-755-83251052
2
 NTR4502PT1G
[Link]
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

50 2
VGS = 10 V thru 5 V

40
1.5
VGS = 4.5 V

ID - Drain Current (A)

ID - Drain Current (A)

30
VGS = 4 V
1 TC = 25 °C
20

0.5
10 TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0 0.5 1 1.5 2
0 0.6 1.2 1.8 2.4 3
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.08 1800
RDS(on) - On-Resistance (Ω)

0.06 VGS = 4.5 V 1350

VGS = 6 V
C - Capacitance (pF)

Ciss

0.04 VGS = 10 V 900

0.02 450
Coss

Crss
0 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.5
ID = 5.4 A VDS = 8 V ID = 5.4 A
VGS = 10 V, 6 V
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)

8
1.3
VDS = 15 V
6 VGS = 4.5 V

1.1
4
VDS = 24 V

0.9
2

0 0.7
0 5 10 15 20 25
- 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

E-mail：China@VBsemi TEL:86-755-83251052
3
 NTR4502PT1G
[Link]
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100 0.080
ID = 5.4 A

0.060

RDS(on) - On-Resistance (Ω)

IS - Source Current (A)

10

TJ = 150 °C TJ = 125 °C
0.040

TJ = 25 °C TJ = 25 °C
1
0.020

0.1 0.000
0.0 0.3 0.6 0.9 1.2 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2 10
ID = 250 μA

8
1.75
Power (W)

6
VGS(th) (V)

1.5

1.25
2 TA = 25 °C

1 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000

TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power (Junction-to-Ambient)

10

5 Limited by RDS(on)*

100 μs
ID - Drain Current (A)

1 1 ms
10 ms

0.1 100 ms
10s, 1 s
DC
0.01
TA = 25 °C
Single Pulse BVDSS Limited
0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

E-mail：China@VBsemi TEL:86-755-83251052
4
 NTR4502PT1G
[Link]
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

5.8

4.6

ID - Drain Current (A)

3.4

2.2

0
0 25 50 75 100 125 150
TC - Case Temperature (°C)

Current Derating*

3.1 1.0

2.48
0.8

1.86
Power (W)
Power (W)

0.5

1.24

0.3
0.62

0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power, Junction-to-Foot Power, Junction-to-Ambient

* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

E-mail：China@VBsemi TEL:86-755-83251052
5
 NTR4502PT1G
[Link]
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05

t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

E-mail：China@VBsemi TEL:86-755-83251052
6
 NTR4502PT1G
[Link]

SOT-23 (TO-236): 3-LEAD

3
E1 E
1 2

S e

e1

0.10 mm
C
0.004" C 0.25 mm
A A2 q
Gauge Plane
Seating Plane Seating Plane
A1 C
L
L1

MILLIMETERS INCHES
Dim
Min Max Min Max
A 0.89 1.12 0.035 0.044
A1 0.01 0.10 0.0004 0.004
A2 0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E1 1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e1 1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L1 0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3° 8° 3° 8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

E-mail：China@VBsemi TEL:86-755-83251052
7
 NTR4502PT1G
[Link]

RECOMMENDED MINIMUM PADS FOR SOT-23

0.037 0.022
(0.950) (0.559)
(2.692)

(1.245)
0.106

0.049
(0.724)
0.029

0.053
(1.341)

0.097
(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

E-mail：China@VBsemi TEL:86-755-83251052
8
 NTR4502PT1G
[Link]



                              
           

                           

         !   !"              
                            
    tw"

   #                    

         $  $            
  %  & '"                    ( )"       
           %          ( *"       
       +          

,                #            

                    ,       
          +   -    .             
                            
/                             
     
                   .
  $             /        $     
                   

0 $                        

                  1             
                           $  
  #      2                   
        

              .         $   

                             /
   #           #                

       
                        
!"            
  #      
$%&&'() ' * $%&& + ( ,  -        .       
  / 01 2           0tw1

              !"
  # $%%$'3) '   4
              
  # $%%$'3) '   
  #
$%&&'() '

                      
 2   2     /    5
 5"6%37      
           8 (&$932$2$&           
        8 (&$932$2$&    # 5"6%37

E-mail：China@VBsemi TEL:86-755-83251052
9