Content

TRUE/FALSE EXAM ..............................................................................2

CIRCUIT ACTION EXAMINATION .............................................................................3
SELF-EVALUATION
BASIC PROBLEMSS ...................................................................................................... 9
Simulation of figure 5-10..........................................................................................16
TRUE/FALSE EXAM
1. The polarization in cd sets the operating point in cd of a
amplifier.
True
2. The point Q is the quiescent point in a biasing circuit.
R:False
3. The load line of the CD intersects the horizontal axis of the curve.
characteristic of a transistor at VCE = VCC.
True
4. The load line of the DC intersects the vertical axis of the characteristic curve.
of a transistor in IC = 0.
R:False
5. The linear operating region of a transistor is between saturation and
cut.
True
Polarization through a voltage divider is rarely used.
R:False
7. The input resistance at the base of the transistor can affect the
polarization with voltage divider.
True
8. The polarization with a rigid voltage divider is essentially
independent of the load on the base.
True
9. The polarization of the emitter uses a dc supply voltage.
R:False
10. Negative feedback is used in feedback polarization
of the collector.

True
11. The base polarization is less stable than the polarization with
voltage divider.
True
12. A pnp transistor requires voltages of opposite polarities to a
npn transistor.
True

CIRCUIT ACTION EXAM

If VBB in figure 5-7 increases, the value of point Q of the current
in the collector is
(a) increments
reduce
(c) does not change

2. If VBB in figure 5-7 increases, the value of point Q of VCE will

increase
reduce
(c) does not change

3. If the value of R2 in figure 5-10 is reduced, the voltage at the base will
increases
reduce
(c) does not change

4. If the value of R1 in figure 5-10 is increased, the current in the emitter

se
a) increase
reduce
(c) does not change

5. If RE in figure 5-16 is reduced, the current in the collector will

(a) increases
reduce
(c) does not change

6. If RB in figure 5-19 is reduced, the voltage at the base with respect to the
transmitter is

increases
(b) reduce
(c) does not change

7. If VCC in figure 5-21 increases, the voltage at the base with respect to
to the sender
increases
reduce
(c) does not change

8. If R1 in figure 5-25 opens, the voltage at the collector will

increments
(b) reduce
(c) does not change

9. If R2 in figure 5-25 opens, the voltage at the collector will

(a) increases
reduce
(c) does not change

10. If R2 in figure 5-25 is increased, the current in the emitter will

increases
reduce
(c) does not change
SELF-EVALUATION
Section 5–1
The maximum value of the current in the collector in a biased transistor
is
(a)
(b) IC(sat)
> IE
(d)
Ideally, a load line for the CD is a line drawn over the curves.
characteristics of collector among
(a) point Q and cut
(b) point Q and saturation
(c) VCE(cut) and IC(sat)
(d)
3. If a sinusoidal voltage is applied to the base of a biased npn transistor and
the resulting sine voltage in the collector is clipped to almost zero volts, the
transistor is
being taken to saturation
being taken to court
(c) operating linearly
responses a) and c)
(e) answers b) and c)
Section 5-2
4. The input resistance at the base of a biased transistor depends
mainly from
(a)
(b) RB
(c) RE
(d)
5. In a circuit with a transistor biased by a voltage divider such
as in figure 5-13,
BASE RENT can generally be disregarded in calculations when
(a)
(b)
(c)
(d)
6. In a certain npn transistor biased with a voltage divider, VB is 2.95
V. The DC voltage at the emitter is approximately
2.25 V
2.95 V
(c) 3.65 V
0.7 V
7. Polarization with voltage divider
a) cannot be independent of bCD
(b) can be essentially independent of bCD
It is not widely used
(d) requires fewer components than all other methods
Section 5-3
8. The polarization of the emitter is

essentially independent of bCD

(b) very dependent on bCD
(c) provides a stable polarization point
(d) answers a) and c)
9. In a circuit with emitter biasing, RE 2.7 kΩ and VEE 15 V. The
current in the emitter:
It is 5.3 mA
it is 2.7 mA
(c) is 180 mA
cannot be determined

10. The disadvantage of base polarization is that

it is very complex
produce low profit
(c) depends too much on beta
produces a high leakage current
11. Collector feedback polarization
(a) is based on the principle of positive feedback
(b) is based on beta multiplication
(c) is based on the principle of negative feedback
it is not very stable
Section 5–4
12. In a voltage divider biased npn transistor, if the resistor of the
top part of the divider
voltage (the one connected to VCC) opens
the transistor is going to cut off
the transistor will go into saturation
(c) the transistor burns out
the supply voltage is too high
13. In a biased npn transistor with a voltage divider, if the resistor of the
the lower part of the voltage divider (the one that is grounded) opens
the transistor is not affected
the transistor can be turned off
(c) the transistor can be driven to saturation
the current in the collector will be reduced
14. In a pnp transistor biased with a voltage divider, there is no current.
base, but the voltage at the base is approximately correct. The problem
most likely is
an open bias resistor
The resistor in series with the open collector
the open base-emitter junction
(d) Resistor in series with the open emitter
(e) Answers a) and c)
(f) Responses c) and d)
15. If R1 in figure 5-26 opens, the voltage at the base is
10 V
0V
3.13 V
0.7 V
16. If R1 opens, the current in the collector in figure 5-26 is
5.17 mA
10 mA
(c) 4.83 mA
0 mA
BASIC PROBLEMS
Section 5-1 The operating point in cd
2. What is the Q point of a transistor biased as shown in figure 5-2 with IB = 150 mA,
75

= (
= 75150μA )= 11.3 mA

= − 18V11.3 (mA * 1.0)( kΩ = ) - 11.3V = 6.75V

18V
− : = 6.75V, I 11.3 mA

4. What is the cutoff VCE value in problem 2?

= 18 mA

6. Suppose you want to polarize the transistor in figure 5-34 with IB = 20 mA. What voltage
Should the VBB source be changed? What are the values of IC and VCE at the Q point, given
what bCD = 50?

-0.7V

= (
+ 0.7V =20µA )(1.0MΩ +) 0.7V = 20.7V

= = 50(20 µA) = 1 mA
= − (
= 20V -1mA )( = 0.01V
10kΩ ) 10V
8. Determine if the transistor in figure 5-35 is biased in cutoff, saturation, or in the
linear region. Remember that IC = bCDIB is valid only in the linear region.
10. Determine the following in figure 5-36:
Maximum collector current for linear operation
(b) Base current at maximum collector current
(c) VCE with maximum current at the collector
− 1.5V - 0.7V
= = 80μA
10KΩ
8V
= = 20.5 mA
390Ω
= (
7580μA =)6mA
<0<I < ( )

10. Determine the following in figure 5-36:

Maximum collector current for linear operation
Current at the base in the maximum current at the collector
(c) VCE with maximum current in the collector

= 42 mA
= 450 μA
= 1.5 V
Section 5-2 Polarization through a voltage divider
12. The polarization resistor R2 in figure 5-37 is replaced by a potentiometer.
of 15 kΩ. What is the minimum resistance that causes saturation?

15V
( ) = = 6.88 mA
+ 2.18 kΩ

( ) = ( ) = (6.88 mA680Ω
)( )= 4.68v

= ( ) + 0.7V = 4.68V + 0.7V = 5.38V

2 ||
( ) 15V = 5.38V
1+ 2 ||

( 2| | )(15V )=(5.38V(R1+ 2 || )

( 2| | )( (- ) 2
15V | | 5.38V)( = )
15.38V ( )

( 2| | )(15V - 5.38V(22KΩ)(5.38V)
)
( 22KΩ )( 5.38V )
2 || = 12.3KΩ
15V - 5.38V

1 1 1
+ =
2 12.3KΩ
1
= 71.5μS
2

2= 14 KΩ
14. Determine all the voltages at the terminals of the transistor with respect to ground in the
Figure 5-38. Do not omit the input resistance at the base or VBE

2 || 15KΩ||(110)(1.0KΩ
=( )= ( ) 9V = 1.97V
1+ 2 || 47KΩ + 15KΩ||(110)(1.0KΩ)

= -0.7V = 1.97V - 0.7V = 1.27V

1.27V
≅ = = = 1.27mA
1.0KΩ
= − (
= 9V -0.0000546)( V 6.21V
)
16. (a) Determine VB in figure 5-39
(b) How is VB affected if the transistor is replaced with one with a bCD of 50?

( ) = (
= 50560Ω) = 28KΩ

5.6KΩ || 28KΩ 4.67KΩ

( (
) -12V =) ( (
) -12V =) -1.49V
33KΩ + 5.6KΩ||28KΩ 37.7 KΩ

( ) = (
501120Ω =) 56KΩ
5.6kΩ||5.6kΩ 5.09KΩ
( (
) -12V =) ( (
) -12V =) −1.69V
33KΩ + 56KΩ||5.6KΩ 38.1KΩ

Determine I1, I2, and IB in figure 5-39.

= 1.65V
−
1= = 314μA
1

2= = 295µA
2

= 1− 2= 19μA
Simulation of figure 5-10