Yarmouk University
Hijjawi Faculty for Engineering Technology
Electronics Engineering Department
ELE250: Electronics (1) First Semester 2024-2025
Homework (5 Marks) Due to 25.11.2024 on E-learning system
Instructors: Prof. Osama Khreis, prof. Abdallah Ababneh, Dr. Idrees Alkofahi, Dr. Shadi Alboon and Dr.
Mohammad Alsumadi
Student Name:
Student ID: Serial No:
Instructor Name:
Important Notes:
Please write your detailed answers in the empty space below each question.
-1-
Q1) For the questions Q1a – Q1d, choose the correct answer.
Q1a) The minority carriers in an n-type semiconductor are:
A) Negative ions B) Ionized donors C) Holes
D) Ionized acceptors E) Positive ions F) Electrons
Q1b) In the forward-bias region of a practical diode:
A) the diode current increases exponentially with increase in voltage across the diode.
B) the diode current increases linearly with increase in voltage across the diode.
C) the diode current remains constant with increase in voltage across the diode.
D) the dc resistance remains constant with increase in voltage across the diode.
E) the dc resistance remains constant with increase in diode current.
F) the dc resistance increases with increase in diode current.
Q1c) In an npn BJT,
A) the current is only due to electrons.
B) the current is only due to holes.
C) the current due to electrons equals to that due to holes.
D) the current component due to holes is larger than that due to electrons.
E) the current is mainly due to electrons.
Q1d) A BJT can be operated in the cut off region when:
A) both BE junction and the BC junction are forward biased.
B) the BE junction is forward biased and the BC junction is reverse biased.
C) the BE junction is reverse biased and the BC junction is forward biased.
D) both BE junction and the BC junction are reverse biased.
E) the BE junction is forward biased and the BC junction is grounded.
-2-
Q2) For the circuit shown in Figure 1, answer Q2a and Q2b.
Q2a) Find I in [mA].
Q2b) Find Vo in [V].
I VZ= 2.3V
-->
Vo
2k
+ 1k
10V Si Si
2V
Fig. 1
-3-
Q3) For the circuit shown in Figure 2, assume Vin=20sinωt [in V] to answer Q3a, Q3b and Q3c.
Q3a) Draw the output waveform (Vo) and explain in details your solution.
Q3b) Find the average output voltage (Vodc) in [V].
Q3c) Find the peak inverse voltage (PIV) of D1 in [V].
D1
2k
- VO +
Vin
2k
1k
-
Fig. 2
-4-
Q4) For the circuit shown in Figure 3, answer Q4a and Q4b.
Q4a) Find the minimum RL (RLmin) in [Ω] to turn the zener diode in the “on” state.
Q4b) Find the maximum RL (RLmax) in [Ω] to turn the zener diode in the “on” state and not to
exceed the maximum power rating.
+
1k 0.8k
+
10V VZ= 6V RL Vo
PZM=18mW
-
Fig.3
-5-
Q5) For the circuit shown in Figure 4, answer Q5a and Q5b.
Q5a) Find the range of Vin in [V] that makes the diode “ON”.
Q5b) if Vin= -10V, find Vo in [V].
2V
1k
+ +
+
Vin Vo
3V
+
- -
Fig. 4
-6-
Q6) For the circuit shown in Figure 5, assume Vin=10sinωt [in V], draw the output waveform (Vo)
and explain in details your solution.
+ +
2k
Si Si
Si Vo
Vin
1k VZ=3V
1k
- -
Fig.5
-7-
Q7) For the circuit shown in Figure 6, answer Q7a and Q7b.
Q7a) Find IEQ [in mA].
Q7b) Find VCEQ [in V].
15V
1k
100k
Vo
Vin ß=100
100k
2k
-3V
Fig. 6
-8-
Q8) Consider the circuit shown in figure (7), if VCEQ = 0.5 VCEcutoff, answer Q8a & Q8b.
Q8a) Find IEQ (in mA).
Q8b) Find Rx (in kΩ).
+24V
3k
100k Rx
+
Ge
B=100
Vz=3.2V
1k
Figure (7)
-9-
Q9) Consider the circuit shown in figure 8, to answer Q9a, Q9b and Q9c.
Q9a) Find the maximum Vin (in V), that will leave the transistor in the cutoff region.
Q9b) Find the minimum Vin (in V), that will turn on the transistor in the saturation region.
Q9c) If Vin = 10V, Find VC (in V).
20V
1k
VC
50k
Vin ß=100
200k
-2V 6V
Figure 8
1KΩ
1KΩ
1KΩ
Open circuit
11